Electro- and Photoluminescence
Supervisor: Dr.Volker
Riede
The study of luminescence on
semiconductors offers an excellent possibility for getting information
about the band structure, the doping, and excitons. The investigations
are done on AIII-BV-semiconductors and there mixed systems. The spectra
of luminescence diodes (emitting light in different spectral ranges)
are measured as well as the photoluminescence of (Ga,Al)As- and
CdS-samples at liquid nitrogen temperature. The optical excitation is
done with an Argon-ion laser. The spectra have to be interpreted. One
has to consider direct and indirect transitions, the different
recombination mechanisms and also the properties of free and bound
excitons. The technical parameters (wavelength accuracy, resolving
power, sample temperature) have to be determined.
- Doped semiconductors, mixed crystals
- Band structure
- Electrical and optical excitation
- Recombination mechanisms
- Determination of the band transition energies and of the exciton binding energies
- Finding out the composition of mixed crystals
- Calibration of a grating monochromator
- Properties of laser
- Pressure and temperature measurements
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