Experiment nr. 8

Electro- and Photoluminescence

Supervisor: Dr.Volker Riede

The study of luminescence on semiconductors offers an excellent possibility for getting information about the band structure, the doping, and excitons. The investigations are done on AIII-BV-semiconductors and there mixed systems. The spectra of luminescence diodes (emitting light in different spectral ranges) are measured as well as the photoluminescence of (Ga,Al)As- and CdS-samples at liquid nitrogen temperature. The optical excitation is done with an Argon-ion laser. The spectra have to be interpreted. One has to consider direct and indirect transitions, the different recombination mechanisms and also the properties of free and bound excitons. The technical parameters (wavelength accuracy, resolving power, sample temperature) have to be determined.