Electro- and Photoluminescence
Supervisor: Dr. Chriatian Chmelik
The study of luminescence on
semiconductors offers an excellent possibility for getting
information about the band structure, the doping, and
excitons. The investigations are done on
AIII-BV-semiconductors and there mixed systems. The spectra of
luminescence diodes (emitting light in different spectral
ranges) are measured as well as the photoluminescence of
(Ga,Al)As- and CdS-samples at liquid nitrogen temperature. The
optical excitation is done with an Argon-ion laser. The
spectra have to be interpreted. One has to consider direct and
indirect transitions, the different recombination mechanisms
and also the properties of free and bound excitons. The
technical parameters (wavelength accuracy, resolving power,
sample temperature) have to be determined.
- Doped semiconductors, mixed crystals
- Band structure
- Electrical and optical excitation
- Recombination mechanisms
- Determination of the band transition energies and of the exciton binding energies
- Finding out the composition of mixed crystals
- Calibration of a grating monochromator
- Properties of laser
- Pressure and temperature measurements
