Please request access to reprints here. Hirsch index (based on Publons) h=77 (10/2024, 864 publ., 28854 cit.) Hirsch index (based on Google Scholar) h=94 (10/2024, 47960 cit., last 5y: h=49, 5 most quoted: 4639, 1585, 1505, 1491, 1151)
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all info no icons RTF Initials No issue Funding Style1 Style2 960 Yang Chen, Michael S. Bar, Susanne Selle, Daniel Splith, Michael Lorenz, Marius Grundmann, Holger von Wenckstern Low-Temperature Buffer Layer-Assisted Heteroepitaxial Growth of γ-CuI Thin Films by Pulsed Laser Deposition: Tailoring Electrical Properties
 Appl. Phys. Lett. 2025, 126(4), 042104:1-7 [Editor's Pick] [ | | IF: 3.794 ] 959 Jingjing Yu, Sijun Luo, Daniel Splith, Susanne Selle, Katrin Thieme, Stephan Gierth, Thorsten Schultz, Peter Schlupp, Chris Sturm, Holger von Wenckstern, Michael Lorenz, Norbert Koch, Thomas Höche, Marius Grundmann Heteroepitaxial Ultrawide Bandgap Spinel γ-(Ga0.8Ge0.2)2O3 Alloy Thin Films and Demonstration on Metal-Semiconductor Field-Effect Transistor
 J. Appl. Phys. 2025, XXX(XX), accepted 958 Lucas Krätschmer, Younes Slimi, Lukas Trefflich, Shirley Espinoza, Mateusz Rebarz, Saul Vazquez-Miranda, Jakob Seyfarth, Theo Pflug, Markus Olbrich, Noah Stiehm, Bernd Hähnlein, Chris Sturm, Alexander Horn, Jakob Andreasson, Marius Grundmann, Stefan Krischok, Rüdiger Schmidt-Grund Ultrafast Exciton and Charge Carrier Dynamics in Monolayer MoS2 Measured with Time-Resolved Spectroscopic Ellipsometry
 Phys. Status Solidi B 2025, XXX(XX), 2400547:1-11 [ | | IF: 1.522 ] 957 Jingjing Yu, Sijun Luo, Daniel Splith, Holger von Wenckstern, Marius Grundmann Heteroepitaxial Cubic (111) Zn2GeO4 Ultrawide Bandgap Semiconductor Thin Films Grown on Cubic (111) MgAl2O4 Substrates by Pulsed Laser Deposition
 Phys. Status Solidi RRL 2025, XXX(XX), 2400401:1-7 [ | | IF: 2.58 ] 956 Paul Bokemeyer, Clemens Petersen, Christiane Dethloff, Yang Chen, Holger von Wenckstern, Marius Grundmann, Sofie Vogt α-Ga2O3 based heterojunction diodes and junction field effect transistors
 Phys. Status Solidi RRL 2025, XXX(XX), 2400388:1-6 [ | | IF: 2.58 ] 955 Physics and Fundamental Theory
Comprehensive Semiconductor Science and Technology, Vol. 1, M. Grundmann (R. Fornari, Editor-in-Chief), eds. (Elsevier, 2024), ISBN 9780323960274 [ link ] 954 Sofie Vogt, Daniel Splith, Sebastian Köpp, Peter Schlupp, Clemens Petersen, Holger von Wenckstern, Marius Grundmann Lateral α-Ga2O3:Zr metal-semiconductor field effect transistors
 Appl. Phys. Lett. 2024, 125(25), 253507:1-6 [ | | IF: 3.794 ] 953 S. Henn, A. Müller, M. Grundmann, C. Sturm Long-range propagation of Bloch surface wave polaritons in ZnO
 Appl. Phys. Lett. 2024, 125(21), 211104:1-5 [ | | IF: 3.794 ] 952 Sebastian Henn, Marius Grundmann, Chris Sturm Characterization of dielectric diffraction gratings by spectroscopic ellipsometry
 J. Appl. Phys. 2024, 136(7), 073101:1-7 [ | | IF: 2.21 ] 951 Michael S. Bar, Daniel Splith, Yang Chen, Marius Grundmann, Holger von Wenckstern, Tomáš Rauch, Steffen Blaurock, Harald Krautscheid Deconvolution of light- and heavy-hole contributions to temperature-dependent Hall effect measurements in zincblende copper iodide
 Phys. Rev. Appl. 2024, 22(4), 044027:1-8 [ | | IF: 4.808 ] 950 S. Vogt, C. Petersen, H. von Wenckstern, M. Grundmann, T. Schultz, N. Koch Zr doping in pulsed laser deposited α-Ga2O3 for device applications
 Phys. Rev. Appl. 2024, 21(6), 064016:1-8 [ | | IF: 4.808 ] 949 Christiane Dethloff, Katrin Thieme, Susanne Selle, Michael Seifert, Sofie Vogt, Daniel Splith, Silvana Botti, Marius Grundmann, Michael Lorenz Ni-Alloyed Copper Iodide Thin Films: Microstructural Features and Functional Performance
 Phys. Status Solidi B 2024, 261(3), 2300492:1-11 [ | | IF: 1.522 ] 948 Chris Sturm, Marius Grundmann Propagation of electromagnetic waves in optically anisotropic materials: Polarization and intensity behaviour
 Phys. Status Solidi RRL 2024, XXX(XX), accepted 947 Sebastian Henn, Gregor Dornberg, Andreas Müller, Carsten Bundesmann, Frank Frost, Chris Sturm, Marius Grundmann Optical and structural characterization of ZnO thin films upon ion beam assisted smoothing
 Thin Solid Films 2024, 794, 140290:1-8 [ | | IF: 1.604 ] 946 A. Jörns, H. von Wenckstern, and M. Grundmann Demonstration of Two Multi-component Target Ablation Approaches and Their Application in Combinatorial Pulsed Laser Deposition Adv. Phys. Res. 2024, 3(5), 2300140:1-8 [ | ] 945 M. Grundmann Quantum devices of reduced dimensionality
Encyclopedia of Condensed Matter Physics (2nd edition) 2024, 3, 529-533, T. Chakraborty, ed. (Elsevier, Oxford, 2024), ISBN 978-0-323-91408-6 [ | ] 944 Thorsten Schultz, Max Kneiß, Philipp Storm, Daniel Splith, Holger von Wenckstern, Christoph T. Koch, Adnan Hammud, Marius Grundmann, Norbert Koch Growth of κ-([Al,In]xGa1-x)2O3 Quantum Wells and their Potential for Quantum Well Infrared Photodetectors
 ACS Appl. Mater. Interfaces 2023, 15(24), 29535-29541 [ | | IF: 7.504 ] 943 Fabian Schöppach, Daniel Splith, Holger von Wenckstern, Marius Grundmann Oxygen Plasma Treatment to Enable Indium Oxide MESFET Devices
 Adv. Electron. Mater. 2023, 9(11), 2300291:1-7 [ | | IF: 6.312 ] 942 Fangjuan Geng, Liangjun Wang, Tillmann Stralka, Daniel Splith, Siyuan Ruan, Jialin Yang, Lei Yang, Gang Gao, Liangge Xu, Michael Lorenz, Marius Grundmann, Jiaqi Zhu, Chang Yang (111)-oriented growth and acceptor doping of transparent conductive CuI:S thin films by spin coating and RF-sputtering
 Adv. Engin. Mater. 2023, 25(11), 2201666:1-5 [ | | IF: 3.862 ] 941 Evgeny Krüger, Michael Seifert, Volker Gottschalch, Harald Krautscheid, Claudia S. Schnohr, Silvana Botti, Marius Grundmann, Chris Sturm Optical properties of AgxCu1–xI alloy thin films
 AIP Adv. 2023, 13(3), 035117:1-11 [ | | IF: 1.444 ] 940 Jon Borgersen, Robert Karsthof, Vegard Rønning, Lasse Vines, Holger von Wenckstern, Marius Grundmann, Andrej Yu. Kuznetsov, Klaus Magnus Johansen Origin of enhanced conductivity in low dose ion irradiated oxides
 AIP Adv. 2023, 13(1), 015211:1-5 [ | | IF: 1.444 ] 939 Andreas Müller, Sebastian Henn, Evgeny Krüger, Steffen Blaurock, Harald Krautscheid, Marius Grundmann, Chris Sturm Two- and three-photon absorption in bulk CuI
 Appl. Phys. Lett. 2023, 123(12), 122103:1-5 [ | | IF: 3.794 ] 938 Sijun Luo, Lukas Trefflich, Susanne Selle, Ron Hildebrandt, Evgeny Krüger, Stefan Lange, Jingjing Yu, Chris Sturm, Michael Lorenz, Holger von Wenckstern, Christian Hagendorf, Thomas Höche, Marius Grundmann Ultrawide Bandgap Willemite-Type Zn2GeO4 Epitaxial Thin Films
 Appl. Phys. Lett. 2023, 122(3), 031601:1-7 [ | | IF: 3.794 ] 937 Clemens Petersen, Sofie Vogt, Max Kneiß, Holger von Wenckstern, Marius Grundmann PLD of α-Ga2O3 on m-plane Al2O3: Growth regime, growth process, and structural properties
 APL Mater. 2023, 11(6), 061122:1-8 [ | | IF: 4.323 ] 936 Ron Hildebrandt, Michael Seifert, Janine George, Steffen Blaurock, Silvana Botti, Harald Krautscheid, Marius Grundmann, Chris Sturm Temperature dependent second-order Raman scattering in CuI
 arxiv: 2023, 2305.18931 [ | ] 935 J.K. Jochum, M. Lorenz, H.P. Gunnlaugsson, C. Patzig, T. Höche, M. Grundmann, A. Vantomme, K. Temst, M.J. Van Bael, V. Lazenka Impact of magnetization and hyperfine field distribution on high magnetoelectric coupling strength in BaTiO3-BiFeO3 multilayers
 arxiv: 2023, 2303.08493 [ | ] 934 Amanda Langørgen, Ymir Kalmann Frodason, Robert Karsthof, Holger von Wenckstern, Ingvild Julie Thue Jensen, Lasse Vines, Marius Grundmann
Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy
 J. Appl. Phys. 2023, 134(1), 015701:1-6 [ | | IF: 2.21 ] 933 S. Köpp, C. Petersen, D. Splith, M. Grundmann, H. von Wenckstern Properties of Schottky barrier diodes on heteroeptixial α-Ga2O3 thin films
 J. Vac. Sci. Technol. A 2023, 41(4), 043411:1-9 [Editor's Pick] [ | | IF: 1.432 ] 932 Laurenz Thyen, Daniel Splith, Max Kneiß, Marius Grundmann, Holger von Wenckstern Masked-assisted radial-segmented target pulsed-laser deposition: A Novel Method for Area-Selective Deposition using Pulsed-Laser Deposition
 J. Vac. Sci. Technol. A 2023, 41(2), 020801:1-5 [Editor's Pick] [ | | IF: 1.432 ] 931 R. Hildebrandt, M. Seifert, J. George, S. Blaurock, S. Botti, H. Krautscheid, M. Grundmann, C. Sturm Determination of acoustic phonon anharmonicities via second-order Raman scattering in CuI
 New J. Phys. 2023, 25(12), 123022:1-11 [ | | IF: 4.063 ] 930 S. Montag, D. Splith, M. Kneiß, M. Grundmann, J. Garcia Fernandez, Ø. Prytz, H. von Wenckstern Cation segregation observed in an (In,Ga)2O3 material thin film library beyond the miscibility limit of the bixbyite structure
 Phys. Rev. Mater. 2023, 7(9), 094603:1-9 [ | ] 929 Tillmann Stralka, Michael Bar, Fabian Schöppach, Susanne Selle, Chang Yang, Holger von Wenckstern, Marius Grundmann Grain and grain boundary conduction channels in copper iodide thin films
 Phys. Status Solidi A 2023, 220(6), 2200883:1-8 [ | | IF: 1.648 ] 928 Sofie Vogt, Clemens Petersen, Max Kneiß, Daniel Splith, Thorsten Schultz, Holger von Wenckstern, Norbert Koch, Marius Grundmann Realization of conductive n-type doped α-Ga2O3 on m-plane sapphire grown by a two-step pulsed laser deposition process
 Phys. Status Solidi A 2023, 220(3), 2200721:1-6 [ | | IF: 1.648 ] 927 Eva M. Zollner, Susanne Selle, Chang Yang, Konrad Ritter, Stefanie Eckner, Edmund Welter, Marius Grundmann, Claudia S. Schnohr Oxygen-induced phase separation in sputtered Cu-Sn-I-O thin films
 Phys. Status Solidi A 2023, 220(5), 2200646:1-10 [ | | IF: 1.648 ] 926 Marius Grundmann Space Charge Region Beyond the Abrupt Approximation
 Phys. Status Solidi B 2023, 260(11), 2300257:1-4 [ | | IF: 1.522 ] 925 Evgeny Krüger, Volker Gottschalch, Gabriele Benndorf, Ron Hildebrandt, Ana Lucía Pereira Brenes, Steffen Blaurock, Michael Bar, Stefan Merker, Chris Sturm, Marius Grundmann, Harald Krautscheid Epitaxial growth of AgxCu1–xI on Al2O3(0001)
 Phys. Status Solidi B 2023, 260(2), 2200493:1-8 [ | | extra | IF: 1.522 ] 924 Apoorva Sharma, Oana T. Ciubotariu, Patrick Matthes, Shun Okano, Vitaly Zviagin, Jana Kalbáčová, Sibylle Gemming, Cameliu Himcinschi, Marius Grundmann, Dietrich R.T. Zahn, Manfred Albrecht, Georgeta Salvan Optical and magneto-optical properties of pulsed laser-deposited thulium iron garnet thin films Appl. Res. 2023, 3(2), e202200064:1-11 [ | ] 923 Marius Grundmann Thin Film Electronics from Amorphous Oxide and Halogen Semiconductors
BuildMoNa Annual Report 2021 2023, p. 27-29 [ | link ] 922 Michael Lorenz, Philipp Storm, Stephan Gierth, Susanne Selle, Holger von Wenckstern, Marius Grundmann Diffundierter Sauerstoff als dominierender flacher Akzeptor in p-Typ Kupferiodid-Dünnfilmen Chemie Ingenieur Technik 2023, 95(11), 1786-1793 [ | ] 921 Bernd Burchard, Jan Meijer, Marius Grundmann Trägermaterial zur Montage von Diamant-Nanokristallen mit NV-Farbzentren in CMOS- Schaltkreisen mittels Gelatine
DE102019121029B4 (Deutsches Patent- und Markenamt, München, 2023) [ ] 920 Fangjuan Geng, Yu-Ning Wu, Daniel Splith, Liangjun Wang, Xiaowan Kang, Shanshan Liang, Lei Yang, Michael Lorenz, Marius Grundmann, Jiaqi Zhu, Chang Yang Amorphous Transparent Cu(S,I) Thin Films with Very High Hole Conductivity J. Phys. Chem. Lett. 2023, 14(26), 6163-6169 [ link | ] 919 Michael Lorenz, Holger Hochmuth, Holger von Wenckstern, Marius Grundmann Flexible hardware concept of pulsed laser deposition for large areas and combinatorial composition spreads Rev. Sci. Instrum. 2023, 94(8), 083905:1-12 [ | ] 918 Marius Grundmann DEVICE FOR CONDUCTING RADIATION, A PHOTODETECTOR ARRANGEMENT, AND A METHOD FOR SPATIALLY RESOLVED SPECTRAL ANALYSIS US 11,543,346 B2 (United States Patent, 2023) [ ] 917 Philipp Storm, Khanim Karimova, Michael Sebastian Bar, Susanne Selle, Holger von Wenckstern, Marius Grundmann, Michael Lorenz Suppression of Rotational Domains of CuI employing Sodium Halide Buffer Layers
 ACS Appl. Mater. Interfaces 2022, 14(10), 12350-12358 [ | | IF: 7.504 ] 916 Robert Karsthof, Ymir Kalmann Frodason, Augustinas Galeckas, Philip Michael Weiser, Vitaly Zviagin, Marius Grundmann Light absorption and emission by defects in doped nickel oxide
 Adv. Phot. Res. 2022, 3(11), 202200138:1-10 [ | | IF: 1.9 ] 915 Tanja Jawinski, Chris Sturm, Roland Clausing, Heiko Kempa, Marius Grundmann, Roland Scheer, Holger von Wenckstern Highly crystalline In2S3 thin films epitaxially grown on sapphire substrates
 AIP Adv. 2022, 12(12), 125215:1-9 [Featured Article] [ | | IF: 1.444 ] 914 Mao Wang, Ye Yu, Slawomir Prucnal, Yonder Berencén, Mohd Saif Shaikh, Lars Rebohle, Muhammad Bilal Khan, Vitaly Zviagin, René Hübner, Alexej Pashkin, Artur Erbe, Yordan M. Georgiev, Marius Grundmann, Manfred Helm, Robert Kirchner, Shengqiang Zhou Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon
 arxiv: 2022, 2210.03373 [ | ] 913 Michael Seifert, Evgeny Krüger, Michael S. Bar, Stefan Merker, Holger von Wenckstern, Harald Krautscheid, Marius Grundmann, Chris Sturm, Silvana Botti Dielectric function of CuBrxI1−x alloy thin films
 arxiv: 2022, 2207.01344 [ | ] 912 Robert Karsthof, Ymir Kalmann Frodason, Augustinas Galeckas, Philip Michael Weiser, Vitaly Zviagin, Marius Grundmann Light absorption and emission by defects in doped nickel oxide
 arxiv: 2022, 2205.02606 [ | ] 911 Xinyi Xia, Nahid Sultan Al-Mamun, Chaker Fares, Aman Haque, Fan Ren, Anna Hassa, Holger von Wenckstern, Marius Grundmann, S.J. Pearton Band Alignment of Al2O3 on α-(AlxGa1-x)2O3
 ECS J. Solid State Sci. Techn. 2022, 11(2), 025006:1-8 [ | | IF: 1.808 ] 910 Philipp Storm, Susanne Selle, Holger von Wenckstern, Marius Grundmann, Michael Lorenz Epitaxial lift-off of single crystalline CuI thin films
 J. Phys. Chem. C 2022, 10(11), 4124-4127 [ | | IF: 4.814 ] 909 Thomas Ruf, Stefan Merker, Frank Syrowatka, Philip Trempler, Georg Schmidt, Michael Lorenz, Marius Grundmann, Reinhard Denecke Preferential growth of perovskite BaTiO3 thin films on Gd3Ga5O12(100) and Y3Fe5O12(100) oriented substrates by pulsed laser deposition
 Mater. Adv. 2022, 3(12), 4920-4931 [ | ] 908 Mao Wang, Ye Yu, Slawomir Prucnal, Yonder Berencén, Mohd Saif Shaikh, Lars Rebohle, Muhammad Bilal Khan, Vitaly Zviagin, René Hübner, Alexej Pashkin, Artur Erbe, Yordan M. Georgiev, Marius Grundmann, Manfred Helm, Robert Kirchner, Shengqiang Zhou Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon
 Nanoscale 2022, 14(7), 2826-2836 [ | | IF: 7.394 ] 907 A. Welk, A. Reinhardt, D. Splith, H. von Wenckstern, M. Grundmann, O. Herrfurth Analysis of an extended percolation-based random band-edge model applied to the amorphous oxide semiconductors: multi-anionic zinc oxynitride, multi-cationic zinc tin oxide and multinary zinc magnesium oxynitride
 Phys. Rev. Appl. 2022, 17(2), 024007:1-14 [ | | IF: 4.808 ] 906 Michael Seifert, Evgeny Krüger, Michael S. Bar, Stefan Merker, Holger von
Wenckstern, Harald Krautscheid, Marius Grundmann, Chris Sturm, Silvana Botti Dielectric function of CuBrxI1–x alloy thin films
 Phys. Rev. Mater. 2022, 6(12), 124601:1-11 [ | ] 905 K. Dorywalski, O. Lupicka, M. Grundmann, C. Sturm Combination of a global-search method with model selection criteria for the ellipsometric data evaluation of DLC coatings Adv. Opt. Technol. 2022, 11(5-6), 173-178 [ | ] 904 Marius Grundmann Amorphous oxide semiconductors for integrated devices
BuildMoNa Annual Report 2020 2022, p. 27-31 [ | link ] 903 Marius Grundmann The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 4th edition
(Springer Nature, Cham, 2021), ISBN 978-3-030-51568-3 [ link | ] 902 Jack E.N. Swallow, Robert G. Palgrave, Philip A.E. Murgatroyd, Anna Regoutz, Michael Lorenz, Anna Hassa, Marius Grundmann, Holger von Wenckstern, Joel B. Varley, Tim D. Veal Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors
 ACS Appl. Mater. Interfaces 2021, 13(2), 2807-2819 [ | | IF: 7.504 ] 901 Anna Reinhardt, Holger von Wenckstern, Marius Grundmann All-amorphous Junction Field-Effect Transistors Based on High-Mobility Zinc Oxynitride
 Adv. Electron. Mater. 2021, 7(4), 2000883:1-6 [ | | IF: 6.312 ] 900 R. Hildebrandt, C. Sturm, M. Grundmann, M. Wieneke, A. Dadgar Raman tensor determination of transparent uniaxial crystals and their thin films - a-plane GaN as exemplary case
 Appl. Phys. Lett. 2021, 119(12), 121109:1-5 [ | | IF: 3.794 ] 899 Evgeny Krüger, Michael S. Bar, Steffen Blaurock, Lukas Trefflich, Ron Hildebrandt, Andreas Müller, Oliver Herrfurth, Gabriele Benndorf, Holger von Wenckstern, Harald Krautscheid, Marius Grundmann, Chris Sturm Dynamics of exciton-polariton emission in CuI
 APL Mater. 2021, 9(12), 121102:1-12 [ | | IF: 4.323 ] 898 P. Storm, S. Gierth, S. Selle, M.S. Bar, H. von Wenckstern, M. Grundmann, M. Lorenz Evidence for oxygen being a dominant shallow acceptor in p-type CuI
 APL Mater. 2021, 9(5), 051101:1-9 [ | | IF: 4.323 ] 897 A. Welk, A. Reinhardt, O. Herrfurth, T. Schultz, H. von Wenckstern, N. Koch, M. Grundmann Tuning material properties of amorphous zinc oxynitride thin films by magnesium cationic substitution
 APL Mater. 2021, 9(2), 021120:1-8 [ | | IF: 4.323 ] 896 Xinyi Xia, Chaker Fares, Fan Ren, Anna Hassa, Holger von Wenckstern, Marius Grundmann, S.J. Pearton Al Composition Dependence of Band Offsets for SiO2 on α-(AlxGa1-x)2O3
 ECS J. Solid State Sci. Techn. 2021, 10(11), 113007:1-8 [ | | IF: 1.808 ] 895 Oliver Lahr, Max Steudel, Holger von Wenckstern, Marius Grundmann Mechanical Stress Stability of Amorphous Zinc Tin Oxide Thin-Film Transistors
 Front. Electron. 2021, 2, 797308:1-7 [ | ] 894 Jon Borgersen, Klaus Magnus Johansen, Lasse Vines, Holger von Wenckstern, Marius Grundmann, Andrej Yu. Kuznetsov Fermi level controlled point defect balance in ion irradiated indium oxide
 J. Appl. Phys. 2021, 130(8), 085703:1-6 [ | | IF: 2.21 ] 893 M. Kneiß, D. Splith, P. Schlupp, A. Hassa, H. von Wenckstern, M. Lorenz, M. Grundmann Realization of Highly Rectifying Schottky Barrier Diodes and pn Heterojunctions on κ-Ga2O3 by Overcoming the Conductivity Anisotropy
 J. Appl. Phys. 2021, 130(8), 084502:1-14 [ | | IF: 2.21 ] 892 P. John, M. Al Khalfioui, C. Deparis, A. Welk, C. Lichtensteiger, R. Bachelet, G. Saint-Girons, M. Hugues, M. Grundmann, J. Zúñiga-Pérez Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical and optical properties
 J. Appl. Phys. 2021, 130(6), 065104:1-11 [ | | IF: 2.21 ] 891 Volker Gottschalch, Gabriele Benndorf, Susanne Selle, Evgeny Krüger, Steffen Blaurock, Max Kneiß, Michael Bar, Chris Sturm, Stefan Merker, Thomas Höche, Marius Grundmann, Harald Krautscheid Epitaxial growth of rhombohedral β- and cubic γ-CuI
 J. Cryst. Growth 2021, 570, 126218 [ | | IF: 1.552 ] 890 M. Kneiß, D. Splith, H. von Wenckstern, M. Lorenz, T. Schultz, N. Koch, M. Grundmann Strain States and Relaxation for α-(AlxGa1−x)2O3 Thin Films on Prismatic Planes of α-Al2O3 in the Full Composition Range: Fundamental Difference of a- and m-Epitaxial Planes in the Manifestation of Shear Strain and Lattice Tilt
 J. Mat. Res. 2021, 36(23), 4816-4831 [ | | IF: 1.713 ] 889 Oliver Herrfurth, Evgeny Krüger, Steffen Blaurock, Harald Krautscheid, Marius Grundmann Hot-phonon effects in photo-excited wide-bandgap semiconductors
 J. Phys.: Condens. Matter 2021, 33(20), 205701:1-9 [ | | IF: 2.721 ] 888 A. Hassa, M. Grundmann, H. von Wenckstern Progression of Group-III Sesquioxides: Epitaxy, Solubility and Desorption
 J. Phys. D: Appl. Phys. 2021, 54(22), 223001:1-15 [ | | IF: 2.772 ] 887 Marius Grundmann, Tillmann Stralka, Michael Lorenz, Susanne Selle, Christian Patzig, Thomas Höche Plastic strain relaxation and alloy instability in epitaxial corundum-phase (Al,Ga)2O3 thin films on r-plane Al2O3
 Mater. Adv. 2021, 2(13), 4316-4322 [ | ] 886 S. Henn, M. Grundmann, C. Sturm Strong coupling of Bloch surface waves and excitons in ZnO up to 430 K
 New J. Phys. 2021, 23(9), 093031:1-10 [ | | IF: 4.063 ] 885 Marius Grundmann, Chris Sturm Angular position of singular optic axes for arbitrary dielectric tensors
 Phys. Rev. A 2021, 103(5), 053510:1-6 [ | | IF: 3.042 ] 884 O. Herrfurth, S. Richter, M. Rebarz, S. Espinoza, J. Zúñiga-Pérez, C. Deparis, J. Leveillee, A. Schleife, M. Grundmann, J. Andreasson, R. Schmidt-Grund Transient birefringence and dichroism in ZnO studied with fs-time-resolved spectroscopic ellipsometry
 Phys. Rev. Res. 2021, 3(1), 013246:1-12 [ | ] 883 Daniel Splith, Stefan Müller, Holger von Wenckstern, Marius Grundmann Numerical modeling of Schottky barrier diode characteristics
 Phys. Status Solidi A 2021, 218(12), 202100121:1-13 [ | | IF: 1.648 ] 882 M. Grundmann, M. Lorenz Azimuthal anisotropy of rhombohedral (corundum-phase) heterostructures
 Phys. Status Solidi B 2021, 258(7), 202100104:1-5 [ | | IF: 1.522 ] 881 M. Kneiß, P. Storm, A. Hassa, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann Epitaxial Growth of κ-(AlxGa1−x)2O3 Layers and Superlattice Heterostructures up to x=0.48 on Highly Conductive Al-doped ZnO Thin Film Templates by Pulsed Laser Deposition
 Phys. Status Solidi B 2021, 258(2), 202000359:1-10 [ | | IF: 1.522 ] 880 Anna Hassa, Philipp Storm, Max Kneiß, Daniel Splith, Holger von Wenckstern, Michael Lorenz, Marius Grundmann Correction to: Structural and elastic properties of α-(AlxGa1−x)2O3 thin films on (11.0) Al2O3 substrates for the entire composition range
 Phys. Status Solidi B 2021, 258(2), 2000632 (1 page) [ | | IF: 1.522 ] 879 Anna Hassa, Philipp Storm, Max Kneiß, Daniel Splith, Holger von Wenckstern, Michael Lorenz, Marius Grundmann Structural and elastic properties of α-(AlxGa1−x)2O3 thin films on (11.0) Al2O3 substrates for the entire composition range
 Phys. Status Solidi B 2021, 258(2), 2000394:1-10 [ | | IF: 1.522 ] 878 Philipp Storm, Michael Sebastian Bar, Susanne Selle, Holger von Wenckstern, Marius Grundmann, Michael Lorenz P-Type Doping and Alloying of CuI Thin Films with Selenium
 Phys. Status Solidi RRL 2021, 15(8), 202100214:1-6 [ | | IF: 2.58 ] 877 Wenlei Yu, Gabriele Benndorf, Yunfeng Jiang, Kai Jiang, Chang Yang, Michael Lorenz, Marius Grundmann Control of optical absorption and emission of sputtered copper iodide thin films
 Phys. Status Solidi RRL 2021, 15(1), 2000431:1-5 [ | | IF: 2.58 ] 876 Marius Grundmann Combinatorial acceleration of material research
BuildMoNa Annual Report 2019 2021, p. 26-28 [ | link ] 875 Thorsten Schultz, Max Kneiß, Philipp Storm, Daniel Splith, Holger von Wenckstern, Marius Grundmann, Norbert Koch Band offsets at κ-([Al,In]xGa1-x)2O3/MgO interfaces
 ACS Appl. Mater. Interfaces 2020, 12(7), 8879-8885 [ | | IF: 7.504 ] 874 Oliver Lahr, Michael Bar, Holger von Wenckstern, Marius Grundmann All-oxide transparent thin-film transistors based on amorphous zinc-tin-oxide
fabricated at room temperature: Approaching the thermodynamic limit for sub-threshold swing
 Adv. Electron. Mater. 2020, 6(10), 2000423:1-6 [ | | IF: 6.312 ] 873 Anna Reinhardt, Holger von Wenckstern, M. Grundmann Metal-Semiconductor Field-Effect Transistors Based on the Amorphous Multi-Anion Compound ZnON
 Adv. Electron. Mater. 2020, 6(4), 1901066:1-5 [ | | IF: 6.312 ] 872 Marius Grundmann Comment on "Stress–strain state in α-Ga2O3 epitaxial films on α-Al2O3 substrates" [Appl. Phys. Express 13, 075502 (2020)]
 Appl. Phys. Expr. 2020, 13(8), 089101 (1 page) [ | | IF: 2.567 ] 871 Melanie Budde, Daniel Splith, Piero Mazzolini, Abbes Tahraoui, Johannes Feldl, Manfred Ramsteiner, Holger von Wenckstern, Marius Grundmann, Oliver Bierwagen SnO/β-Ga2O3 vertical pn heterojunction diodes
 Appl. Phys. Lett. 2020, 117(25), 252106:1-6 [ | | IF: 3.794 ] 870 M. Grundmann, M. Lorenz Epitaxial growth and strain relaxation of corundum-phase (Al,Ga)2O3 thin films from
pulsed laser deposition at 1000°C on r-plane Al2O3
 Appl. Phys. Lett. 2020, 117(24), 242102:1-4 [ | | IF: 3.794 ] 869 Marius Grundmann Universal Relation for the Orientation of Dislocations from Prismatic Glide Systems in Hexagonal and Rhombohedral Strained Heterostructures
 Appl. Phys. Lett. 2020, 116(8), 082104:1-3 [ | | IF: 3.794 ] 868 Robert Karsthof, Holger von Wenckstern, Marius Grundmann Identification of LiNi and VNi acceptor levels in doped nickel oxide
 APL Mater. 2020, 8(12), 121106:1-7 [Featured article] [ | | extra | IF: 4.323 ] 867 P. Storm, M. Bar, S. Selle, C. Yang, H. von Wenckstern, M. Grundmann, M. Lorenz High mobility, highly transparent, smooth, p-type CuI thin films grown by pulsed laser deposition
 APL Mater. 2020, 8(9), 091115:1-8 [SciLight] [ | | IF: 4.323 ] 866 Oliver Lahr, Holger von Wenckstern, Marius Grundmann Ultrahigh-Performance Integrated Inverters Based on Amorphous Zinc-Tin-Oxide Deposited at Room Temperature
 APL Mater. 2020, 8(9), 091111:1-8 [Editor's Pick] [ | | IF: 4.323 ] 865 P. Schlupp, S. Vogt, H. von Wenckstern, M. Grundmann Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates
 APL Mater. 2020, 8(6), 061112:1-7 [ | | IF: 4.323 ] 864 M. Kneiß, P. Storm, A. Hassa, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann Growth, Structural and Optical Properties of Coherent κ-(AlxGa1-x)2O3/κ-Ga2O3 Quantum Well Superlattice Heterostructures
 APL Mater. 2020, 8(5), 051112:1-14 [ | | IF: 4.323 ] 863 M. Grundmann, M. Lorenz Anisotropic Strain Relaxation Through Prismatic and Basal Slip in α-(Al,Ga)2O3 on R-Plane Al2O3
 APL Mater. 2020, 8(2), 021108:1-14 [ | | IF: 4.323 ] 862 A. Hassa, C. Sturm, M. Kneiß, D. Splith, H. von Wenckstern, T. Schultz, N. Koch, M. Lorenz, M. Grundmann Solubility Limit and Material Properties of a κ-(AlxGa1−x)2O3 thin film with a lateral cation gradient on (00.1)Al2O3 by tin-assisted PLD
 APL Mater. 2020, 8(2), 021103:1-7 [ | | IF: 4.323 ] 861 Robert Karsthof, Holger von Wenckstern, Marius Grundmann Identification of LiNi and VNi acceptor levels in doped nickel oxide
 arxiv: 2020, 2010.02694 [ | link ] 860 Melanie Budde, Daniel Splith, Piero Mazzolini, Abbes Tahraoui, Johannes Feldl, Manfred Ramsteiner, Holger von Wenckstern, Marius Grundmann, Oliver Bierwagen SnO/β-Ga2O3 vertical pn heterojunction diodes
 arxiv: 2020, 2010.00362 [ | link ] 859 C. Wouters, C. Sutton, L. M. Ghiringhelli, T. Markurt, R. Schewski, A. Hassa, H. von Wenckstern, M. Grundmann, M. Scheffler, M. Albrecht Investigating the ranges of (meta)stable phase formation in (InxGa1-x)2O3: Impact of the cation coordination
 arxiv: 2020, 2008.04573 [ | link ] 858 Robert Staacke, Roger John, Max Kneiß, Christian Osterkamp, Séverine Diziain, Fedor Jelezko, Marius Grundmann, Jan Meijer Method of full polarization control of microwave fields in a scalable transparent structure for spin manipulation
 J. Appl. Phys. 2020, 128(19), 194301:1-9 [ | | IF: 2.21 ] 857 V. Zviagin, C. Sturm, P. Esquinazi, M. Grundmann, R. Schmidt-Grund Control of Magnetic Properties in Spinel ZnFe2O4 Thin Films Through Intrinsic Defect Manipulation
 J. Appl. Phys. 2020, 128(16), 165702:1-7 [ | | IF: 2.21 ] 856 Chaker Fares, Minghan Xian, David J. Smith, Martha R. McCartney, Max Kneiß, Holger von
Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, S.J. Pearton Changes in band alignment during annealing
at 600°C of ALD Al2O3 on (InxGa1-x)2O3 for x=0.25-0.74
 J. Appl. Phys. 2020, 127(10), 105701:1-8 [ | | IF: 2.21 ] 855 Haoming Wei, Chao Yang, Yangqing Wu, Bingqiang Cao, Michael Lorenz, Marius Grundmann From energy harvesting to topologically insulating behavior: ABO3–type epitaxial thin films and superlattices
 J. Mater. Chem. C 2020, 8(44), 15575-15596 [ | | IF: 7.059 ] 854 Michitaka Fukumoto, Chang Yang, Wenlei Yu, Christian Patzig, Thomas Höche, Thomas Ruf, Reinhard Denecke, Michael Lorenz, Marius Grundmann Experimental evidence of wide bandgap in triclinic (001)-oriented Sn5O2(PO4)2 thin films on Y2O3 buffered glass substrates
 J. Mater. Chem. C 2020, 8(40), 14203-14207 [ | | IF: 7.059 ] 853 Jon Borgersen, Lasse Vines, Ymir K. Frodason, Andrej Kuznetsov, Holger von Wenckstern, Marius Grundmann, Martin W. Allen, Jesús Zúñiga-Pérez, Klaus Johansen Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials
 J. Phys.: Condens. Matter 2020, 32(50), 415704:1-12 [ | | IF: 2.721 ] 852 Anna Hassa, Charlotte Wouters, Max Kneiß, Daniel Splith, Chris Sturm, Holger von Wenckstern, Martin Albrecht, Michael Lorenz, Marius Grundmann Control of Phase Formation of (AlxGa1-x)2O3 Thin Films on c-plane Al2O3
 J. Phys. D: Appl. Phys. 2020, 53(48), 485105:1-9 [ | | IF: 2.772 ] 851 Stefan Hohenberger, Johanna K. Jochum, Margriet J. Van Bael, Kristiaan Temst, Christian Patzig, Thomas Höche, Michael Lorenz, Marius Grundmann Enhanced Magnetoelectric Coupling in BaTiO3-BiFeO3 Multilayers - An Interface Effect
 Materials 2020, 13(1), 197:1-14 [ | | IF: 2.247 ] 850 Linus Krieg, Zhipeng Zhang, Daniel Splith, Holger von Wenckstern, Marius Grundmann, Xiaoxue Wang, Karen K. Gleason, Tobias Voss Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition
 Nano Express 2020, 1(1), 010013:1-7 [ | ] 849 Linus Krieg, Florian Meierhofer, Sascha Gorny, Stefan Leis, Daniel Splith, Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann, Xiaoxue Wang, Jana Hartmann, Christoph Margenfeld, Irene Manglano Clavero, Adrian Avramescu, Tilman Schimpke, Dominik Scholz, Hans-Jürgen Lugauer, Martin Strassburg, Jörgen Jungclaus, Steffen Bornemann, Hendrik Spende, Andreas Waag, Karen K. Gleason, Tobias Voss Towards 3D hybrid inorganic/organic optoelectronics: light emission and electronic transport properties of GaN/oCVD-PEDOT structures
 Nature Commun. 2020, 11, 5092:1-10 [ | | IF: 12.001 ] 848 Marius Grundmann Topological States of the Diatomic Linear Chain: Effect of Impedance Matching to the Fixed Ends
 New J. Phys. 2020, 22(8), 083076:1-7 [ | | IF: 4.063 ] 847 Steffen Richter, Oliver Herrfurth, Shirly Espinoza, Mateusz Rebarz, Miroslav Kloz, Joshua A. Leveillee, André Schleife, Stefan Zollner, Marius Grundmann, Jakob Andreasson, Rüdiger Schmidt-Grund Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry
 New J. Phys. 2020, 22(8), 083066:1-14 [ | | IF: 4.063 ] 846 C. Sturm, S. Höfer, K. Hingerl, T.G. Mayerhöfer, M. Grundmann Dielectric function decomposition by dipole orientation distribution: Application to triclinic K2Cr2O7
 New J. Phys. 2020, 22(7), 073041:1-11 [ | | IF: 4.063 ] 845 C. Sturm, V. Zviagin, M. Grundmann Dielectric tensor, optical activity and singular optic axes of KTP in the spectral range 0.5-8.4 eV
 Phys. Rev. Mater. 2020, 4(5), 055203:1-7 [ | ] 844 Robert Karsthof, Arthur Markus Anton, Friedrich Kremer, Marius Grundmann Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium
 Phys. Rev. Mater. 2020, 4(3), 034601:1-7 [ | ] 843 C. Wouters, C. Sutton, L.M. Ghiringhelli, T. Markurt, R. Schewski, A. Hassa, H. von Wenckstern, M. Grundmann, M. Scheffler, M. Albrecht Investigating the ranges of (meta)stable phase formation in (InxGa1-x)2O3: Importance of the cation coordination
 Phys. Rev. Res. 2020, 4(12), 125001:1-10 [ | ] 842 Lukas Trefflich, Frank Dissinger, Rüdiger Schmidt-Grund, Chris Sturm, Siegfried R. Waldvogel, Marius Grundmann Influence of the excitation conditions on the emission behavior of carbon nanodot-based planar microcavities
 Phys. Rev. Res. 2020, 2(4), 043216:1-6 [ | ] 841 Marius Grundmann Topological States due to Third-Neighbor Coupling in a Diatomic Linear Elastic Chains
 Phys. Status Solidi B 2020, 257(9), 202000176:1-5 [ | | IF: 1.522 ] 840 Marius Grundmann A Most General and Facile Recipe for the Calculation of Heteroepitaxial Strain
 Phys. Status Solidi B 2020, 257(12), 2000323:1-5 [ | | IF: 1.522 ] 839 Ingrid Mertig, Marius Grundmann, Wolf Widdra Functionality of Oxide Interfaces
 Phys. Status Solidi B 2020, 257(7), 2000270 (1 page) [ | | extra | IF: 1.522 ] 838 Robert Karsthof, Marius Grundmann, Holger von Wenckstern, Jesús Zúñiga-Pérez, Christiane Deparis Nickel oxide-based heterostructures with large band offsets
 Phys. Status Solidi B 2020, 257(7), 1900639:1-11 [ | | IF: 1.522 ] 837 Vitaly Zviagin, Marius Grundmann, Rüdiger Schmidt-Grund Impact of Defects on Magnetic Properties of Spinel Zinc Ferrite Thin Films
 Phys. Status Solidi B 2020, 257(7), 1900630:1-11 [ | | IF: 1.522 ] 836 R. Denecke, M. Welke, P. Huth, J. Gräfe, K. Brachwitz, M. Lorenz, M. Grundmann, M. Ziese, P. Esquinazi, E. Goering, G. Schütz, A. Chassé, K.-M. Schindler Magnetic Anisotropy in Thin Layers of (Mn,Zn)Fe2O4 on SrTiO3(001)
 Phys. Status Solidi B 2020, 257(7), 1900627:1-8 [ | | IF: 1.522 ] 835 H. von Wenckstern, M. Kneiß, P. Storm, M. Grundmann A review of the segmented-target approach to combinatorial material synthesis by pulsed-laser deposition
 Phys. Status Solidi B 2020, 257(7), 1900626:1-13 [ | | IF: 1.522 ] 834 Marius Grundmann The Principal Axes Systems for the Elastic Properties of Monoclinic Gallia (β-Ga2O3)
 Sci. Rep. 2020, 10, 19486:1-8 [ | | IF: 5.578 ] 833 Marius Grundmann Oxid-Halbleiter mit ultrabreiter Bandlücke: Darstellung mittels kombinatorischer gepulster Laserdeposition und Untersuchung physikalischer Eigenschaften
 Vakuum in Forschung und Praxis 2020, 32(6), 32-37 [ | ] 832 Chang Yang, Eduard Rose, Wenlei Yu, Tillmann Stralka, Fangjuan Geng, Michael Lorenz, Marius Grundmann Controllable growth of copper iodide by sputtering towards high-mobility thin films and self-assembled microcrystals ACS Applied Electronic Materials 2020, 2(11), 3627-3632 [ | ] 831 Marius Grundmann Building material gradients laterally and vertically - combinatorial acceleration of material research and new device perspectives
BuildMoNa Annual Report 2018 2020, p. 20-22 [ | link ] 830 Daniel Splith, Peter Schlupp, Holger von Wenckstern, Marius Grundmann All-oxide pn-heterojunction diodes with β-Ga2O3
Gallium Oxide: Crystal Growth, Materials Properties, and Devices 2020, p. 689-702, M. Higashiwaki, S. Fujita, eds. (Springer, Cham, 2020), ISBN 978-3-030-37152-4 [ | | extra ] 829 Holger von Wenckstern, Daniel Splith, Marius Grundmann Pulsed Laser Deposition of Ga2O3 and Related Alloys
Gallium Oxide: Crystal Growth, Materials Properties, and Devices 2020, p. 273-291, M. Higashiwaki, S. Fujita, eds. (Springer, Cham, 2020), ISBN 978-3-030-37152-4 [ | | extra ] 828 Krzysztof Dorywalski, Rüdiger Schmidt-Grund, Marius Grundmann Hybrid GA-gradient method for thin films ellipsometric data evaluation J. of Computational Science 2020, 47(11), 101201:1-7 [ | ] 827 T. Jawinski, R. Scheer, H. von Wenckstern, M. Lorenz, M. Grundmann Properties of epitaxially grown In2S3:V thin films for intermediate band solar cell application Proc. 47th IEEE Photovoltaic Specialists Conference (PVSC) 2020, p. 2663-2666 [ | ] 826 Jonas Michel, Daniel Splith, Julius Rombach, Alexandra Papadogianni, Theresa Berthold, Stefan Krischok, Marius Grundmann, Oliver Bierwagen, Holger von Wenckstern, Marcel Himmerlich Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3
 ACS Appl. Mater. Interfaces 2019, 11(30), 27073-27087 [ | | IF: 7.504 ] 825 O. Lahr, S. Vogt, H. von Wenckstern, M. Grundmann Low-voltage operation of ring oscillators based on room-temperature-deposited amorphous zinc-tin-oxide channel MESFETs
 Adv. Electron. Mater. 2019, 5(12), 1900548:1-5 [ | | IF: 6.312 ] 824 O. Herrfurth, T. Pflug, M. Olbrich, M. Grundmann, A. Horn, R. Schmidt-Grund Femtosecond-time-resolved imaging of the dielectric function of ZnO in the visible
to near-IR spectral range
 Appl. Phys. Lett. 2019, 115(21), 212103:1-5 [Editor's Pick] [ | | IF: 3.794 ] 823 P. Storm, M. Kneiß, A. Hassa, T. Schultz, D. Splith, H. von Wenckstern, N. Koch, M. Lorenz, M. Grundmann Epitaxial κ-(AlxGa1-x)2O3 Thin Films and Heterostructures grown by Tin-assisted VCCS-PLD
 APL Mater. 2019, 7(11), 111110:1-8 [Editor's Pick] [ | | IF: 4.323 ] 822 M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, M. Lorenz, M. Grundmann Epitaxial Stabilization of Single Phase κ-(InxGa1-x)2O3 Thin Films up to x=0.28 on c-sapphire and κ-Ga2O3 (001) Templates by Tin-assisted VCCS-PLD
 APL Mater. 2019, 7(10), 101102:1-10 [Editor's Pick] [ | | IF: 4.323 ] 821 A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva, M. Grundmann Erratum: “Structural, optical, and electrical properties of orthorhombic κ-(InxGa1-x)2O3 thin films” [APL Mater. 7, 022525 (2019)]
 APL Mater. 2019, 7(7), 079901 (1 page) [ | | IF: 4.323 ] 820 Chaker Fares, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, Eric Lambers, S.J. Pearton Valence Band Offsets for ALD SiO2 and Al2O3 on (InxGa1-x)2O3 for x=0.25-0.74
 APL Mater. 2019, 7(7), 071115:1-7 [ | | IF: 4.323 ] 819 A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva, M. Grundmann Structural, optical and electrical properties of orthorhombic κ-(InxGa1-x)2O3 thin films
 APL Mater. 2019, 7(2), 022525:1-9 [ | | IF: 4.323 ] 818 M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, T. Schultz, N. Koch, M. Grundmann Tin-Assisted Heteroepitaxial PLD-growth of κ-Ga2O3 Thin Films with High Crystalline Quality
 APL Mater. 2019, 7(2), 022516:1-11 [ | | IF: 4.323 ] 817 Robert Karsthof, Marius Grundmann, Holger von Wenckstern, Jesús Zúñiga-Pérez, Christiane Deparis Nickel oxide-based heterostructures with large band offsets
 arxiv: 2019, 1910.13169 [ | ] 816 Vitaly Zviagin, Chris Sturm, Pablo Esquinazi, Marius Grundmann, Rüdiger Schmidt-Grund Control of Magnetic Order in Spinel ZnFe2O4 Thin Films Through Intrinsic Defect Manipulation
 arxiv: 2019, 1909.13711 [ | link ] 815 Robert Karsthof, Marius Grundmann, Arthur Markus Anton, Friedrich Kremer Polaronic inter-acceptor hopping transport in intrinsically doped nickel oxide
 arxiv: 2019, 1905.03537 [ | link ] 814 Steffen Richter, Oliver Herrfurth, Shirly Espinoza, Mateusz Rebarz, Miroslav Kloz, Joshua A. Leveillee, André Schleife, Stefan Zollner, Marius Grundmann, Jakob Andreasson, Rüdiger Schmidt-Grund Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry
 arxiv: 2019, 1902.05832 [ | link ] 813 Slawomir Prucnal, Yonder Berencén, Mao Wang, Jörg Grenzer, Matthias Voelskow, Rene Hübner, Yuji Yamamoto, Alexander Scheit, Florian Bärwolf, Vitaly Zviagin, Rüdiger Schmidt-Grund, Marius Grundmann, Jerzy Żuk, Marcin Turek, Andrzej Droździel, Krzysztof Pyszniak, Robert Kudrawiec, Maciej P. Polak, Lars Rebohle, Wolfgang Skorupa, Manfred Helm, Shengqiang Zhou Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
 arxiv: 2019, 1901.01721 [ | link ] 812 A. Hassa, H. von Wenckstern, L. Vines, M. Grundmann Influence of oxygen pressure on growth of Si-doped (AlxGa1-x)2O3 thin films on c-sapphire substrates by pulsed laser deposition
 ECS J. Solid State Sci. Techn. 2019, 8(7), Q3217-Q3220 [ | | IF: 1.808 ] 811 Stefan Müller, Laurenz Thyen, Daniel Splith, Anna Reinhardt, Holger von Wenckstern, Marius Grundmann High-quality Schottky Barrier Diodes on β-Gallium Oxide Thin Films on Glass Substrate
 ECS J. Solid State Sci. Techn. 2019, 8(7), Q3126-Q3132 [ | | IF: 1.808 ] 810 Chaker Fares, Zahabul Islam, Aman Haque, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, S.J. Pearton Effect of Annealing on the Band Alignment of ALD SiO2 on (AlxGa1-x)2O3 for x=0.2-0.65
 ECS J. Solid State Sci. Techn. 2019, 8(12), P751-P756 [ | | IF: 1.808 ] 809 Chaker Fares, Max Kneiß, Holger von Wenckstern, Marko Tadjer, Fan Ren, Eric Lambers, Marius Grundmann, S.J. Pearton Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x=0.2-0.65
 ECS J. Solid State Sci. Techn. 2019, 8(6), P351-P356 [ | | IF: 1.808 ] 808 Marius Grundmann Monolithic Waveguide-based Linear Photodetector Array for Use as Ultra-Compact Spectrometer
 IEEE Transact. Electr. Dev. 2019, 66(1), 470-477 [ | | IF: 2.062 ] 807 Oliver Lahr, Zhipeng Zhang, Frank Grotjahn, Peter Schlupp, Sofie Vogt, Holger von Wenckstern, Andreas Thiede, Marius Grundmann Full-swing, High-gain Inverters Based on ZnSnO JFETs and MESFETs
 IEEE Transact. Electr. Dev. 2019, 66(8), 3376-3381 [ | | IF: 2.062 ] 806 Slawomir Prucnal, Yonder Berencén, Mao Wang, Lars Rebohle, Robert Kudrawiec, Maciej Polak, Vitaly Zviagin, Rüdiger Schmidt-Grund, Marius Grundmann, Joerg Grenzer, Marcin Turek, Andrzej Drozdziel, Krzysztof Pyszniak, Jerzy Zuk, Manfred Helm, Wolfgang Skorupa, Shengqiang Zhou Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing
 J. Appl. Phys. 2019, 125(20), 203105:1-7 [ | | IF: 2.21 ] 805 Volker Gottschalch, Stefan Merker, Steffen Blaurock, Max Kneiß, Ulrike Teschner, Marius Grundmann, Harald Krautscheid Heteroepitaxial growth of α-, β-, γ- and κ-Ga2O3 phases by metalorganic vapor phase epitaxy
 J. Cryst. Growth 2019, 510(15 March 2019), 76-84 [ | | IF: 1.552 ] 804 Zhijie Li, Hao Li, Zhonglin Wu, Mingkui Wang, Jingting Luo, Hamdi Torun, Pingan Hu, Chang Yang, Marius Grundmann, Xiaoteng Liu, Yong Qing Fu Advances in designs and mechanisms of semiconducting metal oxide nanostructures for high-precision gas sensors operated at room-temperature
 Mater. Horiz. 2019, 6(3), 470-506 [ | | IF: 13.183 ] 803 Leonard Brillson, Jonathan Cox, Hantian Gao, Geoffrey Foster, William Ruane, Alexander Jarjour, Martin Allen, David Look, Holger von Wenckstern, Marius Grundmann Native Point Defect Measurement and Manipulation In ZnO Nanostructures
 Materials 2019, 12(14), 2242:1-15 [ | | IF: 2.247 ] 802 Chris Sturm, Vitali Zviagin, Marius Grundmann Applicability of the constitutive equations for the determination of the material properties of optically active materials
 Opt. Lett. 2019, 44(6), 1351-1354 [Editor's Pick] [ | | IF: 3.589 ] 801 Robert Karsthof, Marius Grundmann, Markus Anton, Friedrich Kremer Polaronic inter-acceptor hopping transport in intrinsically doped nickel oxide
 Phys. Rev. B 2019, 99(23), 235201:1-13 [Editor's Suggestion] [ | | IF: 3.767 ] 800 Steffen Richter, Heinrich-Gregor Zirnstein, Jesús Zúñiga-Pérez, Christiane Deparis, Lukas Trefflich, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund Voigt Exceptional Points in an Anisotropic ZnO-based Planar Microcavity: Square-Root Topology, Polarization Vortices, and Circularity
 Phys. Rev. Lett. 2019, 123(22), 227401:1-7 [ | | IF: 7.645 ] 799 M. Grundmann Modeling of a waveguide-based UV-VIS-IR spectrometer based on a lateral (In,Ga)N alloy gradient
 Phys. Status Solidi A 2019, 216(14), 1900170:1-5 [ | | extra | IF: 1.648 ] 798 P. Schlupp, H. von Wenckstern, M. Grundmann Electrical properties of vertical p-NiO/n-Ga2O3 and p-ZnCo2O4/n-Ga2O3 pn-heterodiodes
 Phys. Status Solidi A 2019, 216(7), 1800729:1-6 [ | | IF: 1.648 ] 797 Rüdiger Schmidt-Grund, Tom Michalsky, Marcel Wille, Marius Grundmann Coherent polariton modes and lasing in ZnO nano- and microwires
 Phys. Status Solidi B 2019, 256(4), 1800462:1-17 [ | | IF: 1.522 ] 796 C.E. Precker, J. Barzola-Quiquia, P.D. Esquinazi, M. Stiller, M.K. Chan, M. Jaime, Z. Zhang, M. Grundmann Record-Breaking Magnetoresistance at the Edge of a Microflake of Natural Graphite
Adv. Engin. Mater. 2019, 21(12), 1900991:1-6 [ | | extra ] 795 Marius Grundmann Copper iodide - very transparent with many holes and no holes at the same time
BuildMoNa Annual Report 2017 2019, p. 26-30 [ | link ] 794 Robert Staacke, Roger John, Max Kneiß,
Marius Grundmann, Jan Meijer Highly transparent conductors for optical and microwave access to spin based quantum
systems NPJ Quantum Information 2019, 5, 98:1-5 [ | ] 793 Report Halbleiterphysik/Semiconductor Physics 2018
Universität Leipzig, M. Grundmann, ed. [ | link ] 792 Max Kneiß, Philipp Storm, Gabriele Benndorf, Marius Grundmann, Holger von Wenckstern Combinatorial material science and strain engineering enabled by pulsed laser deposition using radially segmented targets
 ACS Comb. Sci. 2018, 20(11), 643-652 [ | | IF: 3.032 ] 791 Max Kneiß, Chang Yang, José Barzola-Quiquia, Gabriele Benndorf, Holger von Wenckstern, Pablo Esquinazi, Michael Lorenz, Marius Grundmann Suppression of grain boundary scattering in p-type transparent γ-CuI thin films due to interface tunneling currents
 Adv. Mater. Interf. 2018, 5(6), 1701411:1-12 [ | | IF: 4.279 ] 790 Alexander Jarjour, Jon W. Cox, William T. Ruane, Holger von Wenckstern, Marius Grundmann, Leonard J. Brillson Single Metal Ohmic and Rectifying Contacts to ZnO Nanowires: A Defect Based Approach
 Ann. Phys. 2018, 530(2), 1700335:1-6 [ | | IF: 1.51 ] 789 Michael Lorenz, Stefan Hohenberger, Eduard Rose, Marius Grundmann Atomically stepped, pseudomorphic, corundum-phase (Al1-xGax)2O3 thin films (0 ≤ x < 0.08) grown on R-plane sapphire
 Appl. Phys. Lett. 2018, 113(23), 231902:1-5 [Editor's Pick] [ | | IF: 3.794 ] 788 Evgeny Krüger, Vitaly Zviagin, Chang Yang, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann Temperature dependence of the dielectric function of thin film CuI in the spectral range (0.6-8.3) eV
 Appl. Phys. Lett. 2018, 113(17), 172102:1-5 [ | | IF: 3.794 ] 787 H. Modarresi, E. Menéndez, V.V. Lazenka, N. Pavlovic, M. Bisht, M. Lorenz, C. Petermann, M. Grundmann, A. Hardy, M.K. Van Bael, M.J. Van Bael, A. Vantomme, K. Temst Morphology-induced spin frustration in granular BiFeO3 thin films: Origin of the magnetic vertical shift
 Appl. Phys. Lett. 2018, 113(14), 142402:1-5 [ | | IF: 3.794 ] 786 Sophie Vogt, Holger von Wenckstern, Marius Grundmann MESFETs and inverters based on amorphous zinc-tin-oxide thin films prepared at room temperature
 Appl. Phys. Lett. 2018, 113(13), 133501:1-5 [ | | IF: 3.794 ] 785 Hantian Gao, Shreyas Muralidharan, Nicolas Pronin, Md Rezaul Karim, Susan M. White, Thaddeus Asel, Geoffrey Foster, Sriram Krishnamoorthy, Siddharth Rajan, Lei R. Cao, Masataka Higashiwaki, Holger von Wenckstern, Marius Grundmann, Hongping Zhao, David C. Look, Leonard J. Brillson Optical signatures of deep level defects in Ga2O3
 Appl. Phys. Lett. 2018, 112(24), 242102:1-5 [ | | IF: 3.794 ] 784 M. Grundmann Elastic Theory of Pseudomorphic Monoclinic and Rhombohedral Heterostructures
 J. Appl. Phys. 2018, 124(18), 185302:1-10 [invited] [ | | IF: 2.21 ] 783 V. Prozheeva, R. Hölldobler, H. von Wenckstern, M. Grundmann, F. Tuomisto Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1-x)2O3 thin films
 J. Appl. Phys. 2018, 123(12), 125705:1-6 [ | | IF: 2.21 ] 782 L.J. Brillson, G.M. Foster, J. Cox, W.T. Ruane, A.B. Jarjour, H. Gao, H. von Wenckstern, M. Grundmann, B. Wang, D.C. Look, A. Hyland, M.W. Allen Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices
 J. Electr. Mat. 2018, 47(9), 4980-4986 [ | | IF: 1.635 ] 781 Agathe Bouvet-Marchand, Alain Graillot, János Volk, Rolanas Dauksevicius, Chris Sturm, Elise Saoutieff, Antoine Viana, Björn Christian, Vadim Lebedev, János Radó, István E. Lukács, Marius Grundmann, David Grosso, Cedric Loubat Design of UV-Crosslinked Polymeric Thin Layers for Encapsulation of Piezoelectric ZnO Nanowires for Pressure-Based Fingerprint Sensors
 J. Mater. Chem. C 2018, 6(3), 605-613 [ | | IF: 7.059 ] 780 Christian Laube, Jessica Hellweg, Chris Sturm, Jan Griebel, Marius Grundmann, Axel Kahnt, Bernd Abel Photo-Induced-Heating of Graphitised Nanodiamonds monitored by the Raman-Diamond-Peak
 J. Phys. Chem. C 2018, 122(44), 25685-25691 [ | | IF: 4.814 ] 779 Tom Michalsky, Marcel Wille, Marius Grundmann, Rüdiger Schmidt-Grund Tunable and switchable lasing in a ZnO microwire cavity at room temperature
 J. Phys. D: Appl. Phys. 2018, 51(42), 425305:1-6 [ | | IF: 2.772 ] 778 Kerstin Brachwitz, Tammo Böntgen, Jörg Lenzner, Kartik Ghosh, Michael Lorenz, Marius Grundmann Evolution of magnetization in epitaxial Zn1-xFexOz thin films (0 ≤ x ≤ 0.66) grown by pulsed laser deposition
 J. Phys. D: Appl. Phys. 2018, 51(24), 245003:1-7 [ | | IF: 2.772 ] 777 S. Hohenberger, V. Lazenka, K. Temst, C. Patzig, S. Selle, T. Höche, M. Grundmann, M. Lorenz Effect of double layer thickness on magnetoelectric coupling in multiferroic BaTiO3-Bi0.95Gd0.05FeO3 multilayers
 J. Phys. D: Appl. Phys. 2018, 51(18), 184002:1-9 [ | | IF: 2.772 ] 776 Jonathan W. Cox, Geoffrey M. Foster, Alexander Jarjour, Holger von Wenckstern, Marius Grundmann, Leonard J. Brillson Defect Manipulation to Control ZnO Micro-/Nanowire - Metal Contacts
 Nano Lett. 2018, 18(11), 6974-6980 [ | | IF: 13.025 ] 775 T. Michalsky, M. Wille, M. Grundmann, R. Schmidt-Grund Spatiotemporal evolution of coherent polariton modes in ZnO microwire cavities
 Nano Lett. 2018, 18(11), 6820-6825 [ | | IF: 13.025 ] 774 J.K. Jochum, M. Lorenz, H.P. Gunnlaugsson, C. Patzig, T. Höche, M. Grundmann, A. Vantomme, K. Temst, M.J. Van Bael, V. Lazenka Impact of magnetization and hyperfine field distribution on high magnetoelectric coupling strength in BaTiO3-BiFeO3 multilayers
 Nanoscale 2018, 10(12), 5574-5580 [ | | extra | IF: 7.394 ] 773 Thorsten Schulz, Sofie Bitter, Peter Schlupp, Holger von Wenckstern, Nobert Koch, Marius Grundmann The influence of oxygen deficiency on the rectifying behavior of transparent semiconducting oxide-metal interfaces
 Phys. Rev. Appl. 2018, 9(6), 064001:1-8 [Editor's Suggestion] [ | | IF: 4.808 ] 772 S. Prucnal, Y. Berencén, M. Wang, J. Grenzer, M. Voelskow, R. Hübner, Y. Yamamoto, A. Scheit, F. Bärwolf, V. Zviagin, R. Schmidt-Grund, M. Grundmann, J. Żuk, M. Turek, A. Droździel, K. Pyszniak, R. Kudrawiec, M.P. Polak, L. Rebohle, W. Skorupa, M. Helm, S. Zhou Strain and band gap engineering in GeSn alloys via P doping
 Phys. Rev. Appl. 2018, 10(6), 064055:1-11 [ | | IF: 4.808 ] 771 M. Grundmann Monolithic Forward-looking Photodetector for Use as Ultra-Compact Wavemeter with Wide Spectral Range
 Phys. Status Solidi A 2018, 215(24), 1800651:1-5 [ | | IF: 1.648 ] 770 Tanja Jawinski, Leonard A. Wägele, Roland Scheer, Marius Grundmann, Holger von Wenckstern Properties of In2S3-based pin-heterojunctions
 Phys. Status Solidi A 2018, 215(11), 1700827:1-6 [ | | IF: 1.648 ] 769 Rainer Pickenhain, Matthias Schmidt, Holger von Wenckstern, Gabriele Benndorf, Andreas Pöppl, Rolf Böttcher, Marius Grundmann Negative U Properties of the Deep Level E3 in ZnO
 Phys. Status Solidi B 2018, 255(7), 1700670:1-16 [ | | IF: 1.522 ] 768 Daniel Splith, Stefan Müller, Holger von Wenckstern, Marius Grundmann Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films
 Proc. SPIE 2018, 10533, 105330C:1-8, David J. Rogers, David C. Look, Ferechteh H. Teherani, eds. [ | ] 767 Tilo Meister, Frank Ellinger, Johann W. Bartha, Manfred Berroth, Joachim Burghartz, Martin Claus, Lothar Frey, Alessio Gagliardi, Marius Grundmann, Jan Hesselbarth, Hagen Klauk, Karl Leo, Paolo Lugli, Stefan Mannsfeld, Yiannos Manoli, Renato Negra, Daniel Neumaier, Ullrich Pfeiffer, Thomas Riedl, Susanne Scheinert, Ullrich Scherf, Andreas Thiede, Gerhard Troester, Martin Vossiek, Robert Weigel, Christian Wenger, Golzar Alavi, Markus Becherer, Carlos Alvarado Chavarin, Mohammed Darwish, Martin Ellinger, Chun-Yu Fan, Martin Fritsch, Frank Grotjahn, Marco Gunia, Katherina Haase, Philipp Hillger, Koichi Ishida, Michael Jank, Stefan Knobelspies, Matthias Kuhl, Grzegorz Lupina, Shabnam Mohammadi Naghadeh, Niko Münzenrieder, Sefa Özbek, Mahsa Rasteh, Giovanni A. Salvatore, Daniel Schrüfer, Carsten Strobel, Manuel Theisen, Christian Tückmantel, Holger von Wenckstern, Zhenxing Wang, Zhipeng Zhang Program FFlexCom 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) 2018, p. 1-4 [ | ] 766 Steffen Richter, Jesús Zúñiga-Pérez, Christiane Deparis, Lukas Trefflich, Heinrich-Gregor Zirnstein, Tom Michalsky, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund Exceptional Points in the Dispersion of Optically Anisotropic Planar Microcavities IEEE Photonics Society Summer Topical Meeting Series 2018, p. 195-196, ISBN 978-1-5386-4076-0 [ | ] 765 Tom Michalsky, Marcel Wille, Evgeny Krüger, Chris Sturm, Marius Grundmann, Rüdiger Schmidt-Grund Coherent polariton states and lasing in ZnO nano- and microstructures IEEE Photonics Society Summer Topical Meeting Series 2018, p. 171-172, ISBN 978-1-5386-4076-0 [ | ] 764 Report Halbleiterphysik/Semiconductor Physics 2017
Universität Leipzig, M. Grundmann, ed. [ | link ] 763 Report of The Physics Institutes of Universität Leipzig 2017
Universität Leipzig, M. Grundmann, ed. [ | link ] 762 S. Bitter, P. Schlupp, H. von Wenckstern, M. Grundmann The Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc-Tin-Oxide with Various Cation Composition
 ACS Appl. Mater. Interfaces 2017, 9(31), 26574-26581 [ | | IF: 7.504 ] 761 Michael Lorenz, Dietmar Hirsch, Christian Patzig, Thomas Höche, Stefan Hohenberger, Holger Hochmuth, Vera Lazenka, Kristiaan Temst, Marius Grundmann Correlation of interface impurities and chemical gradients with magnetoelectric coupling strength in multiferroic BiFeO3-BaTiO3 superlattices
 ACS Appl. Mater. Interfaces 2017, 9(22), 18956-18965 [ | | IF: 7.504 ] 760 C. Sturm, R. Schmidt-Grund, V. Zviagin, M. Grundmann Temperature dependence of the dielectric tensor of monoclinic dielectric Ga2O3 single crystals in the spectral range 0.5-8.5 eV
 Appl. Phys. Lett. 2017, 111(8), 082102:1-4 [ | | IF: 3.794 ] 759 Marcel Wille, Evgeny Krüger, Steffen Blaurock, Vitaly Zviagin, Rafael Deichsel, Gabriele Benndorf, Lukas Trefflich, Volker Gottschalch, Harald Krautscheid, Rüdiger Schmidt-Grund, Marius Grundmann Lasing in cuprous iodide microwires
 Appl. Phys. Lett. 2017, 111(3), 031105:1-5 [ | | IF: 3.794 ] 758 Michael Lorenz, Jose Barzola-Quiquia, Chang Yang, Christian Patzig, Thomas Höche, Pablo Esquinazi, Marius Grundmann, Haoming Wei Charge transfer-induced magnetic exchange bias and electron localization in (111)- and (001)-oriented LaNiO3/LaMnO3 superlattices
 Appl. Phys. Lett. 2017, 110(10), 102403:1-5 [ | | IF: 3.794 ] 757 Vera Lazenka, Michael Lorenz, Hiwa Modarresi, Johanna K. Jochum, Haraldur P. Gunnlaugsson, Marius Grundmann, Margriet J. Van Bael, Kristiaan Temst, André Vantomme Interface induced out-of-plane magnetic anisotropy in magnetoelectric BiFeO3-BaTiO3 superlattices
 Appl. Phys. Lett. 2017, 110(9), 092902:1-5 [ | | IF: 3.794 ] 756 C. Sturm, M. Wille, J. Lenzner, S. Khujanov, M. Grundmann Non-linear optical deformation potentials in uniaxially strained ZnO microwires
 Appl. Phys. Lett. 2017, 110(6), 062103:1-4 [ | | IF: 3.794 ] 755 Yogesh Kumar, Israel Lorite, Michael Lorenz, Pablo D. Esquinazi, Marius Grundmann Effect of annealing on the magnetic properties of zinc ferrite thin films
 arxiv: 2017, 1702.06033 [ | link ] 754 Krzysztof Dorywalski, Nathalie Lemée, Bohdan Andriyevsky, Rüdiger Schmidt-Grund, Marius Grundmann, Michał Piasecki, Marie Bousquet, Tomasz Krzyżyński Optical properties of epitaxial Na0.5Bi0.5TiO3 lead-free piezoelectric thin films: Ellipsometric and theoretical studies
 Appl. Surf. Sci. 2017, 421(B), 367-372 [ | | IF: 2.112 ] 753 Martin Welke, Kerstin Brachwitz, Michael Lorenz, Marius Grundmann, Karl-Michael Schindler, Angelika Chasse, Reinhard Denecke Structure and cation distribution in (Mn0.5Zn0.5)Fe2O4 thin films on SrTiO3(001)
 J. Appl. Phys. 2017, 121(22), 225305:1-7 [ | | IF: 2.21 ] 752 Volker Gottschalch, Steffen Blaurock, Gabriele Benndorf, Jörg Lenzner, Marius Grundmann, Harald Krautscheid Copper Iodide synthesized by iodization of Cu-films and deposited using MOCVD
 J. Cryst. Growth 2017, 471, 21-28 [ | | IF: 1.552 ] 751 Michael Lorenz, Haoming Wei, Florian Jung, Stefan Hohenberger, Holger Hochmuth, Marius Grundmann Two-dimensional Frank - van der Merwe growth of functional oxide and nitride thin film superlattices by pulsed laser deposition
 J. Mat. Res. 2017, 32(21), 3936-3946 [ | | IF: 1.713 ] 750 Haoming Wei, Chang Yang, Jose Luis Barzola-Quiquia, Martin Welke, Reinhard Denecke, Christian Patzig, Thomas Höche, Pablo Esquinazi, Marius Grundmann, Michael Lorenz Ferromagnetic phase transition and single-gap type electrical conductivity of epitaxial LaMnO3/LaAlO3 superlattices
 J. Phys. D: Appl. Phys. 2017, 50(43), 43LT02:1-6 [ | | IF: 2.772 ] 749 L. Vines, C. Bhoodoo, H. von Wenckstern, M. Grundmann Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level
 J. Phys. D: Appl. Phys. 2017, 30(2), 025502:1-6 [ | | IF: 2.772 ] 748 C. Yang, D. Souchay, M. Kneiß, M. Bogner, H. M. Wei, M. Lorenz, O. Oeckler, G. Benstetter, Y.Q. Fu, M. Grundmann Transparent Flexible Thermoelectric Material Based on Non-toxic Earth-Abundant p-Type Copper Iodide Thin Film
 Nature Commun. 2017, 8, 16076:1-7 [ | | extra | IF: 12.001 ] 747 Maximilian Zapf, Robert Röder, Karl Winkler, Lisa Kaden, Johannes Greil, Marcel Wille, Marius Grundmann, Rüdiger Schmidt-Grund, Alois Lugstein, Carsten Ronning Dynamical Tuning of Nanowire Lasing Spectra
 Nano Lett. 2017, 17(11), 6637-6643 [ | | IF: 13.025 ] 746 Alexander Shkurmanov, Chris Sturm, Helena Franke, Jörg Lenzner, Marius Grundmann Low temperature PLD-growth of ultrathin ZnO nanowires by using ZnxAl1-xO and ZnxGa1-xO seed layers
 Nanoscale Res. Lett. 2017, 12, 134:1-7 [ | | IF: 2.584 ] 745 A. de Pablos Martín, M. Lorenz, M. Grundmann, Th. Höche Laser Welding of Fused Silica Glass with Sapphire Using a Non- Stoichiometric, Fresnoitic Ba2TiSi2O8
 Optics & Laser Technol. 2017, 92, 85-94 [ | | IF: 1.647 ] 744 Steffen Richter, Tom Michalsky, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund Erratum: Exceptional points in anisotropic planar microcavities
 Phys. Rev. A 2017, 96(5), 059902E:1-2 [ | | IF: 3.042 ] 743 Steffen Richter, Tom Michalsky, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund Exceptional points in anisotropic planar microcavities
 Phys. Rev. A 2017, 95(2), 023836:1-9 [ | | IF: 3.042 ] 742 P. Schlupp, H. von Wenckstern, M. Grundmann Schottky barrier diodes based on room temperature fabricated amorphous zinc tin oxide thin film
 Phys. Status Solidi A 2017, 214(10), 1700210:1-8 [ | | IF: 1.648 ] 741 M. Grundmann Strain in Pseudomorphic Monoclinic Ga2O3-based Heterostructures
 Phys. Status Solidi B 2017, 254(9), 1700134:1-7 [ | | IF: 1.522 ] 740 Marius Grundmann, Chris Sturm, Christian Kranert, Steffen Richter, Rüdiger Schmidt-Grund, Christianne Deparis, Jesús Zúñiga-Pérez Optically Anisotropic Media: New Approaches to the Dielectric Function, Singular Axes, Raman Scattering Intensities and Microcavity Modes
 Phys. Status Solidi RRL 2017, 11(1), 1600295:1-19 [ | | extra | IF: 2.58 ] 739 Marius Grundmann, Steffen Richter, Tom Michalsky, Chris Sturm, Jesús Zúñiga-Pérez, Rüdiger Schmidt-Grund Exceptional points in anisotropic photonic structures: From non-Hermitian physics to possible device applications
 Proc. SPIE 2017, 10105, 101050K:1-8, Ferechteh H. Teherani, David C. Look, David J. Rogers, eds. [ | ] 738 Stefan Müller, Holger von Wenckstern, Florian Schmidt, Daniel Splith, Heiko Frenzel, Marius Grundmann Method of choice for fabrication of high-quality β-gallium oxide-based Schottky diodes
 Semic. Sci. Technol. 2017, 32(6), 065013:1-8 [ | | IF: 2.098 ] 737 T. Lühmann, R. Wunderlich, R. Schmidt-Grund, J. Barzola-Quiquia, P. Esquinazi, M. Grundmann, J. Meijer Investigation of the graphitization process of ion-beam irradiated diamond using ellipsometry, Raman spectroscopy and electrical transport measurements Carbon 2017, 121, 512-517 [ | ] 736 Yogesh Kumar, Israel Lorite, Michael Lorenz, Pablo Esquinazi, Marius Grundmann Effect of annealing on the magnetic properties of zinc ferrite thin films Mater. Lett. 2017, 195, 89-91 [ | ] 735 H.-E. Zschau, M. Schütze, M.C. Galetz, B.M. Gleeson, S. Neve, M. Lorenz, M. Grundmann Surface Chemistry Evolution of F-doped Ni-base Superalloy upon Heat Treatment Materials and Corrosion 2017, 68(2), 220-227 [ | ] 734 Report Halbleiterphysik/Semiconductor Physics 2016
Universität Leipzig, M. Grundmann, ed. [ | link ] 733 Report of The Physics Institutes of Universität Leipzig 2016
Universität Leipzig, M. Grundmann, ed. [ | link ] 732 M. Grundmann Felix Bloch (1905-1983) in Leipzig (in English)
WWW homepage of Felix Bloch Institute for Solid State Physics of Universität Leipzig:1-4 [ | link ] 731 M. Grundmann Felix Bloch (1905-1983) in Leipzig (in German)
WWW-Seite des Felix-Bloch-Institut für Festkörperphysik der Universität Leipzig:1-4 [ | link ] 730 Marius Grundmann The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 3rd edition
(Springer, Heidelberg, 2016), ISBN 978-3-319-23879-1 [ link | | extra ] 729 Nikolay Petkov, János Volk, Róbert Erdélyi, István Endre Lukács, Takahiro Nagata, Chris Sturm, Marius Grundmann Contacting ZnO individual crystal facets by direct write lithography
 ACS Appl. Mater. Interfaces 2016, 8(36), 23891-23898 [ | | IF: 7.504 ] 728 Sofie Bitter, Peter Schlupp, Michael Bonholzer, Holger von Wenckstern, Marius Grundmann Influence of the cation ratio on optical and electrical properties of zinc-tin-oxide thin films from pulsed-laser deposition
 ACS Comb. Sci. 2016, 18(4), 188-194 [ | | IF: 3.032 ] 727 F.J. Klüpfel, H. von Wenckstern, M. Grundmann Ring Oscillators based on ZnO Channel JFETs and MESFETs
 Adv. Electron. Mater. 2016, 2(7), 1500431:1-5 [ | | extra | IF: 6.312 ] 726 Michael Lorenz, Vera Lazenka, Peter Schwinkendorf, Margriet J. Van Bael, André Vantomme, Kristiaan Temst, Marius Grundmann, Thomas Höche Epitaxial coherence at interfaces as origin of high magnetoelectric coupling in multiferroic BaTiO3 - BiFeO3 superlattices
 Adv. Mater. Interf. 2016, 3(11), 1500822:1-7 [ | | extra | IF: 4.279 ] 725 M. Stiller, J. Barzola-Quiquia, P. Esquinazi, D. Spemann, J. Meijer, M. Lorenz, M. Grundmann Strong out-of-plane magnetic anisotropy in ion irradiated anatase TiO2 thin films
 AIP Adv. 2016, 6(12), 125009:1-13 [ | | IF: 1.444 ] 724 Alexander Shkurmanov, Chris Sturm, Jörg Lenzner, Guy Feuillet, Florian Tendille, Philippe De Mierry, Marius Grundmann Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates
 AIP Adv. 2016, 6(9), 095013:1-5 [ | | IF: 1.444 ] 723 Haoming Wei, Marius Grundmann, Michael Lorenz Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO3/ LaAlO3 (111) superlattices
 Appl. Phys. Lett. 2016, 109(8), 082108:1-5 [ | | IF: 3.794 ] 722 M. Wille, T. Michalsky, E. Krüger, M. Grundmann, R. Schmidt-Grund Absorptive lasing mode suppression in ZnO nano- and microcavities
 Appl. Phys. Lett. 2016, 109(6), 061102:1-4 [ | | IF: 3.794 ] 721 I. Lorite, Y. Kumar, P. Esquinazi, S. Friedländer, A. Pöppl, T. Michalsky, J. Meijer, M. Grundmann, T. Mayer Photo-enhanced magnetization in Fe-doped ZnO nanowires
 Appl. Phys. Lett. 2016, 109(1), 012401:1-4 [ | | IF: 3.794 ] 720 Jesús Zúñiga-Pérez, Lars Kappei, Christiane Deparis, François Reveret, Marius Grundmann, Esther de Prado, Omar Jamadi, Joel Leymarie, Sébastien Chenot, Mathieu Leroux Homoepitaxial nonpolar (10-10) ZnO/ZnMgO heterostructures: from single layers to monolithic Bragg reflectors and optical microcavities
 Appl. Phys. Lett. 2016, 108(25), 251904:1-5 [ | | IF: 3.794 ] 719 Zhipeng Zhang, Holger von Wenckstern, Jörg Lenzner, Marius Grundmann Wavelength-selective ultraviolet (Mg,Zn)O photodiodes: Tuning of parallel composition gradients with oxygen pressure
 Appl. Phys. Lett. 2016, 108(24), 243503:1-5 [ | | IF: 3.794 ] 718 V. Zviagin, Y. Kumar, I. Lorite, P. Esquinazi, M. Grundmann, R. Schmidt-Grund Ellipsometric Investigation of ZnFe2O4 Thin Films in Relation to Magnetic Properties
 Appl. Phys. Lett. 2016, 108(13), 131901:1-4 [ | | IF: 3.794 ] 717 Zhipeng Zhang, Holger von Wenckstern, Jörg Lenzner, Michael Lorenz, Marius Grundmann Visible-blind and solar-blind ultraviolet photodiodes based on (InxGa1-x)2O3
 Appl. Phys. Lett. 2016, 108(12), 123503:1-5 [ | | IF: 3.794 ] 716 Rami Khazaka, Marius Grundmann, Marc Portail, Philippe Vennéguès, Marcin Zielinski, Thierry Chassagne, Daniel Alquier, Jean-François Michaud Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C SiC(001)
 Appl. Phys. Lett. 2016, 108(1), 011608:1-4 [ | | IF: 3.794 ] 715 Steffen Richter, Tom Michalsky, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund Exceptional points in anisotropic planar microcavities
 arxiv: 2016, 1609.07653 [ | link ] 714 Christian Kranert, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann Raman tensor elements of β-Ga2O3
 arxiv: 2016, 1606.07409 [ | link ] 713 I. Lorite, Y. Kumar, P. Esquinazi, S. Friedländer, A. Pöppl, T. Michalsky, J. Meijer, M. Grundmann, T. Meyer, I. Estrela-Lopis Photo-enhanced magnetization in Fe-doped ZnO nanowires
 arxiv: 2016, 1606.06955 [ | link ] 712 Marcus Jenderka, Steffen Richter, Michael Lorenz, Marius Grundmann Fundamental absorption edges in heteroepitaxial Y1Bi1O3 thin films
 arxiv: 2016, 1606.03945 [ | link ] 711 Tom Michalsky, Helena Franke, Robert Buschlinger, Ulf Peschel, Marius Grundmann, Rüdiger Schmidt-Grund Coexistence of strong and weak coupling in ZnO nanowire cavities
 arxiv: 2016, 1602.06804 [ | link ] 710 Chris Sturm, Rüdiger Schmidt-Grund, Christian Kranert, Jürgen Furthmüller, Friedhelm Bechstedt, Marius Grundmann Dipole Analysis of the Dielectric Function of Colour Dispersive Materials: Application to Monoclinic Ga2O3
 arxiv: 2016, 1601.07892 [ | link ] 709 M. Wille, C. Sturm, T. Michalsky, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann Carrier density driven material dynamics of lasing ZnO Nanowires
 arxiv: 2016, 1601.03866 [ | link ] 708 Marius Grundmann, Chris Sturm The Singular Optical Axes in Biaxial Crystals and Analysis of Their Spectral Dispersion Effects in β-Ga2O3
 arxiv: 2016, 1601.03760:1-7 [ | link ] 707 Tom Michalsky, Helena Franke, Robert Buschlinger, Ulf Peschel, Marius Grundmann, Rüdiger Schmidt-Grund Coexistence of strong and weak coupling in ZnO nanowire cavities
 Eur. Phys. J. Appl. Phys. 2016, 74(3), 30502:1-10 [ | | IF: 0.667 ] 706 Abdurashid Mavlonov, Steffen Richter, Holger von Wenckstern, Rüdiger Schmidt-Grund, Michael Lorenz, Marius Grundmann Temperature dependent self-compensation in Al and Ga-doped Mg0.05Zn0.95O thin films grown by pulsed laser deposition
 J. Appl. Phys. 2016, 120(20), 205703:1-6 [ | | IF: 2.21 ] 705 M. Jenderka, S. Richter, M. Lorenz, M. Grundmann Fundamental absorption edges in heteroepitaxial YBiO3 thin films
 J. Appl. Phys. 2016, 120(12), 125702:1-4 [ | | IF: 2.21 ] 704 Kazuki Narushima, Yoshito Ashizawa, Kerstin Brachwitz, Holger Hochmuth, Michael Lorenz, Marius Grundmann, Katsuji Nakagawa Magnetic activity of surface plasmon resonance using dielectric magnetic materials fabricated on quartz glass substrate
 Jpn. J. Appl. Phys. 2016, 55(7S3), 07MC05:1-4 [ | | IF: 1.067 ] 703 M. Lorenz, M.S. Ramachandra Rao, T. Venkatesan, E. Fortunato, P. Barquinha, R. Branquinho, D. Salgueiro, R. Martins, E. Carlos, A. Liu, F.K. Shan, M. Grundmann, H. Boschker, J. Mukherjee, M. Priyadarshini, N. DasGupta, D.J. Rogers, F.H. Teherani, E.V. Sandana, P. Bove, K. Rietwyk, A. Zaban, A. Veziridis, A. Weidenkaff, M. Muralidhar, M. Murakami, S. Abel, J. Fompeyrine, J. Zúñiga-Pérez, R. Ramesh, N.A. Spaldin, S. Ostanin, V. Borisov, I. Mertig, V. Lazenka, G. Srinivasan, W. Prellier, M. Uchida, M. Kawasaki, R. Pentcheva, P. Gegenwart, F. Miletto Granozio, J. Fontcuberta, N. Pryds The 2016 oxide electronic materials and oxide interfaces roadmap (ch. 3, M. Grundmann: Bipolar oxide devices)
 J. Phys. D: Appl. Phys. 2016, 49(43), 433001:1-53 [ | | extra | IF: 2.772 ] 702 H. Modarresi, V. Lazenka, E. Menéndez, M. Lorenz, M. Bisht, A. Volodin, C. Van Haesendonck, M. Grundmann, M. J. Van Bael, K. Temst, A. Vantomme Induced ferromagnetism and magnetoelectric coupling in ion-beam synthesized BiFeO3-CoFe2O4 nanocomposite thin films
 J. Phys. D: Appl. Phys. 2016, 49(32), 325302:1-6 [ | | IF: 2.772 ] 701 Marius Grundmann, Fabian Klüpfel, Robert Karsthof, Peter Schlupp, Friedrich-Leonhard Schein, Daniel Splith, Chang Yang, Sofie Bitter, Holger von Wenckstern Oxide Bipolar Electronics: Materials, Devices and Circuits
 J. Phys. D: Appl. Phys. 2016, 49(21), 213001:1-25 [Topical Review] [ | | IF: 2.772 ] 700 R. Karsthof, H. von Wenckstern, M. Grundmann Semi-transparent ZnO-based UV-active solar cells: Analysis of electrical loss mechanisms
 J. Vac. Sci. Technol. B 2016, 34(4), 04J107:1-8 [ | | IF: 1.267 ] 699 Michael Lorenz, Gerald Wagner, Vera Lazenka, Peter Schwinkendorf, Michael Bonholzer, Margriet J. Van Beal, André Vantomme, Kristiaan Temst, Oliver Oeckler, Marius Grundmann Correlation of high magnetoelectric coupling with oxygen vacancy superstructure in epitaxial multiferroic BaTiO3-BiFeO3 composite thin films
 Materials 2016, 9(1), 44:1-13 [ | | extra | IF: 2.247 ] 698 Araceli de Pablos-Martín, Sebastian Tismer, Falk Naumann, Michael Krause, Michael Lorenz, Marius Grundmann, Thomas Höche Evaluation of the Bond Quality of Laser-Joined Sapphire Wafers using a Fresnoite-Glass Sealant
 Microsyst. Technol. 2016, 22(1), 207-214 [ | | IF: 0.952 ] 697 Leonard Brillson, William T. Ruane, Hantian Gao, Yuanyao Zhang, Jian Luo, Holger von Wenckstern, Marius Grundmann Spatially-Resolved Cathodoluminescence Spectroscopy of ZnO Defects
 Mat. Sci. Semic. Process. 2016, 57, 197-209 [ | | IF: 2.264 ] 696 W.T. Ruane, K.M. Johansen, K. Leedy, D.C. Look, H. von Wenckstern, M. Grundmann, L.J. Brillson Defect Segregation and Optical Emission in ZnO Nano- and Microwires
 Nanoscale 2016, 8(14), 7631-7637 [ | | IF: 7.394 ] 695 M. Wille, C. Sturm, T. Michalsky, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann Carrier density driven material dynamics of lasing ZnO Nanowires
 Nanotechnology 2016, 27(22), 225702:1-7 [ | | IF: 3.842 ] 694 A. de Pablos-Martin, S. Tismer, G. Benndorf, M. Mittag, M. Lorenz, M. Grundmann, Th. Höche Laser soldering of sapphire substrates using a BaTiAl6O12 thin-film glass sealant
 Optics & Laser Technol. 2016, 81, 153-161 [ | | IF: 1.647 ] 693 A. de Pablos-Martin, G. Benndorf, Sebastian Tismer, M. Mittag, A. Cismak, M. Lorenz, M. Grundmann, Th. Höche Laser-Welded Fused Silica Substrates Using a Luminescent Fresnoite-Based Sealant
 Optics & Laser Technol. 2016, 80, 176-185 [ | | IF: 1.647 ] 692 Chang Yang, Max Kneiß, Michael Lorenz, Marius Grundmann Room-temperature Synthesized Copper Iodide Thin Film as Degenerate p-Type Transparent Conducting Material with a Boosted Figure of Merit
 PNAS 2016, 113(46), 12929-12933 [ | | IF: 9.423 ] 691 Chris Sturm, Marius Grundmann The Singular Optical Axes in Biaxial Crystals and Analysis of Their Spectral Dispersion Effects in β-Ga2O3
 Phys. Rev. A 2016, 93(5), 053839:1-8 [ | | extra | IF: 3.042 ] 690 C. Sturm, R. Schmidt-Grund, C. Kranert, J. Furthmüller, F. Bechstedt, M. Grundmann Dipole analysis of the dielectric function of color dispersive materials: Application to monoclinic Ga2O3
 Phys. Rev. B 2016, 94(3), 035148:1-11 [ | | IF: 3.767 ] 689 Martin Thunert, Alexander Janot, Helena Franke, Chris Sturm, Tom Michalsky, María Dolores Martín, Luis Viña, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund Cavity Polariton Condensate in a Disordered Environment
 Phys. Rev. B 2016, 93(6), 064203:1-12 [ | | IF: 3.767 ] 688 Christian Kranert, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann Raman Tensor Formalism for Optically Anisotropic Crystals
 Phys. Rev. Lett. 2016, 116(12), 127401:1-5 [ | | extra | IF: 7.645 ] 687 Robert Karsthof, Paul Räcke, Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann Semi-transparent n-ZnO/p-NiO UV solar cells
 Phys. Status Solidi A 2016, 213(1), 30-37 [ | | extra | IF: 1.648 ] 686 Anna Reinhardt, Heiko Frenzel, Holger von Wenckstern, Daniel Spemann, Marius Grundmann Electron transport mechanism in rf-sputtered amorphous zinc oxynitride thin films
 Phys. Status Solidi A 2016, 213(7), 1767-1773 [ | | IF: 1.648 ] 685 V. Zviagin, P. Richter, T. Böntgen, M. Lorenz, M. Ziese, D.R.T. Zahn, G. Salvan, M. Grundmann, R. Schmidt-Grund Comparative Study of Optical and Magneto-Optical Properties of Normal, Disordered and Inverse Spinel Type Oxides
 Phys. Status Solidi B 2016, 253(3), 429-436 [ | | IF: 1.522 ] 684 Marius Grundmann, Jesús Zúñiga-Pérez Pseudomorphic ZnO-based heterostructures: from polar through all semipolar to nonpolar orientations
 Phys. Status Solidi B 2016, 253(2), 351-360 [ | | IF: 1.522 ] 683 Christian Kranert, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann Raman tensor elements of β-Ga2O3
 Sci. Rep. 2016, 6, 35964:1-9 [ | | IF: 5.578 ] 682 Chang Yang, Max Kneiß, Friedrich-Leonhard Schein, Michael Lorenz, Marius Grundmann Room-temperature domain-epitaxy of copper iodide thin films for transparent CuI/ZnO heterojunctions with high rectification ratios larger than 109
 Sci. Rep. 2016, 6, 21937:1-8 [ | | extra | IF: 5.578 ] 681 Marius Grundmann Don't mourn the losses
BuildMoNa Annual Report 2016 2016, p. 26-29 [ | link ] 680 Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE JP 5897621 B2 (Japan Patent Office, 2016) [ ] 679 Alexander Shkurmanov, Chris Sturm, Holger Hochmuth, Marius Grundmann Growth kinetics of ultrathin ZnO Nanowires grown by Pulsed Laser Deposition Proc. Eng. 2016, 168, 1156-1159 [ | ] 678 Report Halbleiterphysik/Semiconductor Physics 2015
Universität Leipzig, M. Grundmann, ed. [ | link ] 677 Report of The Physics Institutes of Universität Leipzig 2015
Universität Leipzig, M. Grundmann, ed. [ | link ] 676 Holger von Wenckstern, Daniel Splith, Anna Werner, Stefan Müller, Michael Lorenz, Marius Grundmann Properties of Schottky barrier diodes on (InxGa1-x)2O3 for 0.01 ≤ x ≤ 0.85 determined by using a combinatorial approach
 ACS Comb. Sci. 2015, 17(12), 710-715 [ | | IF: 3.032 ] 675 H. von Wenckstern, D. Splith, S. Lanzinger, F. Schmidt, S. Müller, P. Schlupp, R. Karsthof, M. Grundmann pn-heterodiodes with n-type In2O3
 Adv. Electron. Mater. 2015, 1(4), 1400026:1-6 [ | | IF: 6.312 ] 674 P. Schlupp, F.-L. Schein, H. von Wenckstern, M. Grundmann All Amorphous Oxide Bipolar Heterojunction Diodes from Abundant Metals
 Adv. Electron. Mater. 2015, 1(1-2), 1400023:1-5 [ | | IF: 6.312 ] 673 Sylvio Schubert, Florian Schmidt, Holger von Wenckstern, Marius Grundmann, Karl Leo, Lars Müller-Meskamp Eclipse Pulsed Laser Deposition for Damage-Free Preparation of Transparent ZnO Electrodes on Top of Organic Solar Cells
 Adv. Funct. Mater. 2015, 25(27), 4321-4327 [ | | IF: 10.4 ] 672 Stefan Müller, Holger von Wenckstern, Florian Schmidt, Daniel Splith, Friedrich-Leonhard Schein, Heiko Frenzel, Marius Grundmann Comparison of Schottky contacts on β-gallium oxide thin films and bulk crystals
 Appl. Phys. Expr. 2015, 8(12), 121102:1-4 [ | | IF: 2.567 ] 671 Robert Schewski, Günter Wagner, Michele Baldini, Daniela Gogova, Zbigniew Galazka, Tobias Schulz, Thilo Remmele, Toni Markurt, Holger von Wenckstern, Marius Grundmann, Oliver Bierwagen, Patrick Vogt, Martin Albrecht Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001)
 Appl. Phys. Expr. 2015, 8(1), 011101:1-4 [ | | IF: 2.567 ] 670 Steffen Richter, Tom Michalsky, Lennart Fricke, Chris Sturm, Helena Franke, Marius Grundmann, Rüdiger Schmidt-Grund Maxwell consideration of polaritonic quasi-particle Hamiltonians in multi-level systems
 Appl. Phys. Lett. 2015, 107(23), 231104:1-5 [ | | IF: 3.794 ] 669 Vera Lazenka, Michael Lorenz, Hiwa Modarresi, Manisha Bisht, Rudolf Rüffer, Michael Bonholzer, Marius Grundmann, Margriet J. Van Bael, André Vantomme, Kristiaan Temst Magnetic spin structure and magnetoelectric coupling in BiFeO3-BaTiO3 multilayer
 Appl. Phys. Lett. 2015, 106(8), 082904:1-4 [ | | IF: 3.794 ] 668 Haoming Wei, Marcus Jenderka, Michael Bonholzer, Marius Grundmann, Michael Lorenz Modeling the conductivity around the dimensionality-controlled metal-insulator transition in LaNiO3/LaAlO3 (100) superlattices
 Appl. Phys. Lett. 2015, 106(4), 042103:1-5 [ | | IF: 3.794 ] 667 F.J. Klüpfel, H. von Wenckstern, M. Grundmann Low Frequency Noise of ZnO based MESFETs
 Appl. Phys. Lett. 2015, 106(3), 033502:1-4 [ | | IF: 3.794 ] 666 Michael Lorenz, Gerald Wagner, Vera Lazenka, Peter Schwinkendorf, Hiwa Modarresi, Margriet J. Van Bael, André Vantomme, Kristiaan Temst, Oliver Oeckler, Marius Grundmann Correlation of magnetoelectric coupling in multiferroic BaTiO3-BiFeO3 superlattices with oxygen vacancies and antiphase octahedral rotations
 Appl. Phys. Lett. 2015, 106(1), 012905:1-5 [ | | extra | IF: 3.794 ] 665 Chris Sturm, Jürgen Furthmüller, Friedhelm Bechstedt, Rüdiger Schmidt-Grund, Marius Grundmann Dielectric tensor of monoclinic Ga2O3 single crystals in the spectral range 0.5-8.5 eV
 APL Mater. 2015, 3(10), 106106:1-9 [ | | IF: 4.323 ] 664 Chris Sturm, Jürgen Furthmüller, Friedhelm Bechstedt, Rüdiger Schmidt-Grund, Marius Grundmann Dielectric tensor of monoclinic Ga2O3 single crystals in the spectral range 0.5-8.5eV
 arxiv: 2015, 1507.05401 [ | link ] 663 Vitaly Zviagin, Peter Richter, Tammo Böntgen, Michael Lorenz, Michael Ziese, Dietrich R.T. Zahn, Georgeta Salvan, Marius Grundmann, Rüdiger Schmidt-Grund Comparative Study of Optical and Magneto-Optical Properties of Normal, Disordered and Inverse Spinel Type Oxides
 arxiv: 2015, 1505.04664 [ | link ] 662 I. Lorite, C. Zandalazini, P. Esquinazi, D. Spemann, S. Friedländer, A. Pöppl, T. Michalsky, M. Grundmann, J. Vogt, J. Meijer, S.P. Heluani, H. Ohldag, W.A. Adeagbo, S.K. Nayak, W. Hergert, A. Ernst, M. Hoffmann Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires
 arxiv: 2015, 1504.08230 [ | link ] 661 Steffen Richter, Stefan G. Ebbinghaus, Marius Grundmann, Rüdiger Schmidt-Grund Antiferromagnetic phase transition in the temperature-dependent NIR-VUV dielectric function of hexagonal YMnO3
 arxiv: 2015, 1503.04043 [ | link ] 660 T. Michalsky, H. Franke, C. Sturm, M. Grundmann, R. Schmidt-Grund Discrete relaxation of exciton-polaritons in an inhomogeneous potential
 arxiv: 2015, 1501.02644 [ | link ] 659 C.P. Dietrich, R. Schmidt-Grund, T. Michalsky, M. Lange, M. Grundmann Room-temperature condensation in whispering gallery microresonators assisted by longitudinal optical phonons
 arxiv: 2015, 1501.01255:1-11 [ | link ] 658 Fabian Johannes Klüpfel, Agnes Holtz, Friedrich-Leonhard Schein, Holger von Wenckstern, Marius Grundmann All-Oxide Inverters Based On ZnO Channel JFETs With Amorphous ZnCo2O4 Gates
 IEEE Transact. Electr. Dev. 2015, 62(12), 4004-4008 [ | | IF: 2.062 ] 657 R. Karsthof, H. von Wenckstern, M. Grundmann Transparent JFETs Based on p-NiO/n-ZnO Heterojunctions
 IEEE Transact. Electr. Dev. 2015, 62(12), 3999-4003 [ | | IF: 2.062 ] 656 R. Schmidt-Grund, C. Kranert, H. von Wenckstern, V. Zviagin, M. Grundmann Dielectric function in the spectral range (0.5-8.5)eV of an (AlxGa1-x)2O3 thin film with continuous composition spread
 J. Appl. Phys. 2015, 117(16), 165307:1-7 [ | | IF: 2.21 ] 655 Christian Kranert, Marcus Jenderka, Jörg Lenzner, Michael Lorenz, Holger von Wenckstern, Rüdiger Schmidt-Grund, Marius Grundmann Lattice parameters and Raman-active phonon modes of β-(AlxGa1-x)2O3
 J. Appl. Phys. 2015, 117(12), 125703:1-6 [ | | IF: 2.21 ] 654 Marcus Jenderka, Rüdiger Schmidt-Grund, Marius Grundmann, Michael Lorenz Electronic excitations and structure of Li2IrO3 thin films grown on ZrO2:Y (001) substrates
 J. Appl. Phys. 2015, 117(2), 025304:1-5 [ | link | | IF: 2.21 ] 653 Rolf Böttcher, Michael Lorenz, Andreas Pöppl, Daniel Spemann, Marius Grundmann Local zinc blende coordination in heteroepitaxial wurtzite Zn1-xMgxO:Mn thin films with 0.01 ≤ x ≤ 0.04 identified by electron paramagnetic resonance
 J. Mater. Chem. C 2015, 3(45), 11918-11929 [ | | IF: 7.059 ] 652 I. Lorite, C. Zandalazini, P. Esquinazi, D. Spemann, S. Friedländer, A. Pöppl, T. Michalsky, M. Grundmann, J. Vogt, J. Meijer, S.P. Heluani, H. Ohldag, W.A. Adeagbo, S.K. Nayak, W. Hergert, A. Ernst, M. Hoffmann Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires
 J. Phys.: Condens. Matter 2015, 27(25), 256002:1-6 [ | | IF: 2.721 ] 651 Christian Kranert, Rüdiger Schmidt-Grund, Marius Grundmann Free charge carriers as origin for redshift of LO modes in wurtzite semiconductors excited above the band gap
 J. Raman Spectr. 2015, 46(1), 167-170 [ | | IF: 2.519 ] 650 Araceli de Pablos-Martin, M. Ebert, C. Patzig, M. Krause, M. Dyrba, P. Miclea, M. Lorenz, M. Grundmann, Th. Höche Laser Welding of Sapphire Wafers Using a Thin-Film Fresnoite Glass Solder
 Microsyst. Technol. 2015, 21(5), 1035-1045 [ | | IF: 0.952 ] 649 C.P. Dietrich, R. Johne, T. Michalsky, C. Sturm, P. Eastham, H. Franke, M. Lange, M. Grundmann, R. Schmidt-Grund Parametric relaxation in whispering-gallery mode exciton-polariton condensates
 Phys. Rev. B 2015, 91(4), 041202(R):1-6 [ | | IF: 3.767 ] 648 Abdurashid Mavlonov, Steffen Richter, Holger von Wenckstern, Rüdiger Schmidt-Grund, Jörg Lenzner, Michael Lorenz, Marius Grundmann Doping efficiency and limits in (Mg,Zn)O:Al,Ga thin films with two-dimensional lateral composition spread
 Phys. Status Solidi A 2015, 212(12), 2850-2855 [ | | IF: 1.648 ] 647 Haoming Wei, Marcus Jenderka, Marius Grundmann, Michael Lorenz LaNiO3 films with tunable out-of-plane lattice parameter and their strain-related electrical properties
 Phys. Status Solidi A 2015, 212(9), 1925-1930 [ | | IF: 1.648 ] 646 Heiko Frenzel, Tobias Dörfler, Peter Schlupp, Holger von Wenckstern, Marius Grundmann Long-throw magnetron sputtering of amorphous Zn-Sn-O-thin films at room temperature
 Phys. Status Solidi A 2015, 212(7), 1482-1486 [ | | IF: 1.648 ] 645 Michael Lorenz, Tobias Weiss, Florian Schmidt, Holger von Wenckstern, Marius Grundmann Aluminium- and gallium-doped homoepitaxial ZnO thin films: Strain-engineering and electrical performance
 Phys. Status Solidi A 2015, 212(7), 1440-1447 [ | | IF: 1.648 ] 644 Marius Grundmann Karl Bädeker (1877-1914) and the discovery of transparent conductive materials
 Phys. Status Solidi A 2015, 212(7), 1409-1426 [ | | extra | IF: 1.648 ] 643 Marius Grundmann, Andreas Rahm, Holger von Wenckstern Transparent Conductive Oxides - Preface
 Phys. Status Solidi A 2015, 212(7), 1408 (1 page) [ | | extra | IF: 1.648 ] 642 Special section on Transparent Conductive Oxides
 Phys. Status Solidi A 2015, 212(7), 1407-1498, Marius Grundmann, Andreas Rahm, Holger von Wenckstern, eds. [ | | extra | IF: 1.648 ] 641 M. Grundmann Theory of Semiconductor Solid and Hollow Nano- and Microwires With Hexagonal Cross-Section Under Torsion
 Phys. Status Solidi B 2015, 252(4), 773-785 [ | | extra | IF: 1.522 ] 640 Florian Schmidt, Daniel Splith, Stefan Müller, Holger von Wenckstern, Marius Grundmann Electronic defects in In2O3 and In2O3:Mg thin films on r-plane sapphire
 Phys. Status Solidi B 2015, 252(10), 2304-2308 [ | | IF: 1.522 ] 639 Holger von Wenckstern, Daniel Splith, Marcus Purfürst, Zhipeng Zhang, Christian Kranert, Stefan Müller, Michael Lorenz, Marius Grundmann Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon
 Semic. Sci. Technol. 2015, 30(2), 024005:1-7 [ | | IF: 2.098 ] 638 Michael Lorenz, Holger Hochmuth, Max Kneiß, Michael Bonholzer, Marcus Jenderka, Marius Grundmann From high-TC superconductors to highly correlated Mott insulators - 25 years of pulsed laser deposition of functional oxides in Leipzig
 Semic. Sci. Technol. 2015, 30(2), 024003:1-10 [ | | IF: 2.098 ] 637 Saskia F. Fischer, Marius Grundmann Semiconductor Functional Oxides
 Semic. Sci. Technol. 2015, 30(2), 020301:1-2 [ | link | | extra | IF: 2.098 ] 636 Special issue on semiconductor functional oxides
 Semic. Sci. Technol. 2015, 30(2), S.F. Fischer, M. Grundmann, eds. [ | link | extra | IF: 2.098 ] 635 C. Bundesmann, R. Feder, R. Wunderlich, U. Teschner, M. Grundmann, B. Rauschenbach, H. Neumann Ion beam sputter deposition of Ge films: Influence of process parameters on film properties
 Thin Solid Films 2015, 589, 487-492 [ | | IF: 1.604 ] 634 S. Puttnins, M.S. Hammer, J. Neerken, I.Riedel, F. Daume, A. Rahm, A.Braun, M. Grundmann, T. Unold Impact of Sodium on the Device Characteristics of Low Temperature-Deposited CIGSe-Solar Cells
 Thin Solid Films 2015, 582, 85-90 [ | | IF: 1.604 ] 633 Marius Grundmann Bipolar oxide devices - Putting pn-heterostructures to work
BuildMoNa Annual Report 2015 2015, p. 26-29 [ | link ] 632 David Poppitz, Andriy Lotnyk, Jürgen W. Gerlach, Jörg Lenzner, Marius Grundmann, Bernd Rauschenbach An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE Micron 2015, 73, 1-8 [ | ] 631 Report of The Physics Institutes of Universität Leipzig 2014
Universität Leipzig, M. Grundmann, ed. [ | link ] 630 Marius Grundmann The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 2nd edition, reprint
(Beijing World Publishing Corporation, Beijing, 2014), ISBN 978-7-5100-7781-4 629 Marius Grundmann, Robert Karsthof, Holger von Wenckstern Interface Recombination Current in Type II Heterostructure Bipolar Diodes
 ACS Appl. Mater. Interfaces 2014, 6(17), 14785-14789 [ | | IF: 7.504 ] 628 Tomasz Jakubczyk, Helena Franke, Tomasz Smolenski, Maciej Sciesiek, Wojciech Pacuski, Andrzej Golnik, Rüdiger Schmidt-Grund, Marius Grundmann, Carsten Kruse, Detlef Hommel, Piotr Kossackiy Inhibition and Enhancement of the Spontaneous Emission of Quantum Dots in Micropillar Cavities with Radial Distributed Bragg Reflectors
 ACS Nano 2014, 8(10), 9970-9978 [ | | IF: 13.334 ] 627 Christian Tessarek, Robert Röder, Tom Michalsky, Sebastian Geburt, Helena Franke, Rüdiger Schmidt-Grund, Martin Heilmann, Björn Hoffmann, Carsten Ronning, Marius Grundmann, Silke Christiansen Improving the optical properties of self-catalyzed GaN microrods towards whispering gallery mode lasing
 ACS Photonics 2014, 1(10), 990-997 [ | | IF: 5.404 ] 626 T. Michalsky, M. Wille, C.P. Dietrich, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann Phonon-assisted Lasing in ZnO Microwires at Room Temperature
 Appl. Phys. Lett. 2014, 105(21), 211106:1-4 [ | link | | IF: 3.794 ] 625 R. Schmidt-Grund, H. Krauß, C. Kranert, M. Bonholzer, M. Grundmann Temperature dependence of the dielectric function in the spectral range (0.5-8.5) eV of an In2O3 thin film
 Appl. Phys. Lett. 2014, 105(11), 111906:1-4 [ | | IF: 3.794 ] 624 Max Kneiß, Marcus Jenderka, Kerstin Brachwitz, Michael Lorenz, Marius Grundmann Modeling the electrical transport in epitaxial undoped and Ni-, Cr-, and W-doped TiO2 anatase thin films
 Appl. Phys. Lett. 2014, 105(6), 062103:1-5 [ | | IF: 3.794 ] 623 Marko Stölzel, Alexander Müller, Gabriele Benndorf, Michael Lorenz, Marius Grundmann, Christian Patzig, Thomas Höche Determination of the spontaneous polarization of wurtzite (Mg,Zn)O
 Appl. Phys. Lett. 2014, 104(19), 192102:1-4 [ | | IF: 3.794 ] 622 Friedrich-Leonhard Schein, Markus Winter, Tammo Böntgen, Holger von Wenckstern, Marius Grundmann Highly rectifying p-ZnCo2O4/n-ZnO heterojunction diodes
 Appl. Phys. Lett. 2014, 104(2), 022104:1-4 [ | | IF: 3.794 ] 621 H. von Wenckstern, D. Splith, F. Schmidt, M. Grundmann, O. Bierwagen, J.S. Speck Schottky contacts to In2O3
 APL Mater. 2014, 2(4), 046104:1-7 [ | | IF: 4.323 ] 620 Martin Thunert, Alexander Janot, Helena Franke, Chris Sturm, Tom Michalsky, María Dolores Martín, Luis Viña, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund Cavity Polariton Condensate in a Disordered Environment
 arxiv: 2014, 1412.8667:1-12 [ | link ] 619 T. Michalsky, M. Wille, C. P. Dietrich, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann Phonon-Assisted Lasing in ZnO Microwires at Room Temperature
 arxiv: 2014, 1410.7970 [ | link ] 618 Marcus Jenderka, Rüdiger Schmidt-Grund, Marius Grundmann, Michael Lorenz Electronic excitations and structure of Li2IrO3 thin films grown on ZrO2:Y (001) substrates
 arxiv: 2014, 1407.3596 [ | link ] 617 Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann Monolithic multichannel ultraviolet photodiodes based on (Mg,Zn)O thin films with continuous composition spreads
 IEEE J. Sel. Top. Quantum Electr. 2014, 20(6), 3801606:1-6 [ | | IF: 4.078 ] 616 Stefan Müller, Holger von Wenckstern, Florian Schmidt, Daniel Splith, Robert Heinold, Martin Allen, Marius Grundmann Method of choice for fabrication of high-quality ZnO-based Schottky diodes
 J. Appl. Phys. 2014, 116(19), 194506:1-12 [ | | IF: 2.21 ] 615 Florian Schmidt, Stefan Müller, Holger von Wenckstern, Gabriele Benndorf, Rainer Pickenhain, Marius Grundmann Impact of strain on defects in (Mg,Zn)O thin films
 J. Appl. Phys. 2014, 116(10), 103703:1-9 [ | | IF: 2.21 ] 614 R. Schmidt-Grund, C. Kranert, T. Böntgen, H. von Wenckstern, H. Krauß, M. Grundmann Dielectric function in the NIR-VUV spectral range of (InxGa1-x)2O3 thin films
 J. Appl. Phys. 2014, 116(5), 053510:1-7 [ | | IF: 2.21 ] 613 Christian Kranert, Jörg Lenzner, Marcus Jenderka, Michael Lorenz, Holger von Wenckstern, Rüdiger Schmidt-Grund, Marius Grundmann Lattice parameters and Raman-active phonon modes of (InxGa1-x)2O3 for x < 0.4
 J. Appl. Phys. 2014, 116(1), 013505:1-7 [ | | IF: 2.21 ] 612 Snigdhatanu Acharya, Sumedha Chouthe, Heinrich Graener, Tammo Böntgen, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann, Gerhard Seifert Ultrafast dynamics of the dielectric functions of ZnO and BaTiO3 thin films after intense femtosecond laser excitation
 J. Appl. Phys. 2014, 115(5), 053508:1-9 [ | | IF: 2.21 ] 611 Rolf Böttcher, Andreas Pöppl, Michael Lorenz, Stefan Friedländer, Daniel Spemann, Marius Grundmann 55Mn Pulsed ENDOR Spectroscopy of Mn2+ Ions in ZnO Thin Films and Single Crystal
 J. Magn. Res. 2014, 245, 79-86 [ | | IF: 2.3 ] 610 Michael Lorenz, Rolf Böttcher, Stefan Friedländer, Andreas Pöppl, Daniel Spemann, Marius Grundmann Local lattice distortions in oxygen deficient Mn-doped ZnO thin films, probed by electron paramagnetic resonance
 J. Mater. Chem. C 2014, 2(25), 4947-4956 [ | | IF: 7.059 ] 609 Michael Lorenz, Vera Lazenka, Peter Schwinkendorf, Francis Bern, Michael Ziese, Hiwa Modarresi, Alexander Volodin, Margriet van Bael, Kristiaan Temst, Andre Vantomme, Marius Grundmann Multiferroic BaTiO3-BiFeO3 composite thin films and multilayers: Strain engineering and magnetoelectric coupling
 J. Phys. D: Appl. Phys. 2014, 47(13), 135303:1-10 [ | | IF: 2.772 ] 608 Michael Lorenz, Araceli de Pablos-Martin, Christian Patzig, Marko Stölzel, Kerstin Brachwitz, Holger Hochmuth, Marius Grundmann, Thomas Höche Highly textured fresnoite thin films synthesized by pulsed laser deposition with CO2 laser direct heating
 J. Phys. D: Appl. Phys. 2014, 47(3), 034013:1-9 [ | | extra | IF: 2.772 ] 607 Florian Schmidt, Peter Schlupp, Stefan Müller, Christof Peter Dietrich, Holger von Wenckstern, Marius Grundmann, Robert Heinhold, Hyung-Suk Kim, Martin Ward Allen A DLTS study of ZnO microwire, thin film and bulk material
 Proc. Mat. Res. Soc. 2014, 1633, 51-54 [ | ] 606 H. von Wenckstern, Z. Zhang, J. Lenzner, F. Schmidt, M. Grundmann A continuous composition spread approach towards monolithic, wavelength-selective multichannel UV-photo-detector arrays
 Proc. Mat. Res. Soc. 2014, 1633, 123-129 [ | ] 605 P. Schlupp, H. von Wenckstern, M. Grundmann Amorphous zinc-tin oxide thin films fabricated by pulsed laser deposition at room temperature
 Proc. Mat. Res. Soc. 2014, 1633, 101-104 [ | ] 604 J.L. Cholula-Díaz, J. Barzola-Quiquia, H. Krautscheid, C. Kranert, T. Michalsky, P. Esquinazi, M. Grundmann Conducting behavior of chalcopyrite-type CuGaS2 crystals under visible light
 Phys. Chem. Chem. Phys. 2014, 16(39), 21860-21866 [ | | IF: 4.198 ] 603 Daniel Splith, Stefan Müller, Florian Schmidt, Holger von Wenckstern, Johan Janse van Rensburg, Walter E. Meyer, Marius Grundmann Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition
 Phys. Status Solidi A 2014, 211(1), 40-47 [ | | IF: 1.648 ] 602 Stefan Müller, Holger von Wenckstern, Daniel Splith, Florian Schmidt, Marius Grundmann Control of the conductivity of Si-doped β-Ga2O3 thin films via growth temperature and pressure
 Phys. Status Solidi A 2014, 211(1), 34-39 [ | | IF: 1.648 ] 601 Michael Bonholzer, Michael Lorenz, Marius Grundmann Layer-by-layer growth of TiN by pulsed laser deposition on in-situ annealed (100) MgO substrates
 Phys. Status Solidi A 2014, 211(11), 2621-2624 [ | | IF: 1.648 ] 600 Peter Schwinkendorf, Michael Lorenz, Holger Hochmuth, Zhipeng Zhang, Marius Grundmann Interface charging effects in ferroelectric ZnO-BaTiO3 field-effect transistor heterostructures
 Phys. Status Solidi A 2014, 211(1), 166-172 [ | | IF: 1.648 ] 599 Florian Schmidt, Stefan Müller, Rainer Pickenhain, Holger von Wenckstern, Sebastian Geburt, Carsten Ronning, Marius Grundmann Defect studies on Ar-implanted ZnO thin films
 Phys. Status Solidi B 2014, 251(5), 937-941 [ | | IF: 1.522 ] 598 M. Grundmann, M. Scheibe, M. Lorenz, J. Bläsing, A. Krost X-ray multiple diffraction of ZnO substrates and heteroepitaxial thin films
 Phys. Status Solidi B 2014, 251(4), 850-863 [ | | IF: 1.522 ] 597 Christian Kranert, Rüdiger Schmidt-Grund, Marius Grundmann Raman active phonon modes of cubic In2O3
 Phys. Status Solidi RRL 2014, 8(6), 554-559 [ | | IF: 2.58 ] 596 Rüdiger Schmidt-Grund, Steffen Richter, Stefan G. Ebbinghaus, Michael Lorenz, Carsten Bundesmann, Marius Grundmann Electronic transitions and dielectric function tensor of a YMnO3 single crystal in the NIR
 RSC Adv. 2014, 4(63), 33549-33554 [ | | IF: 2.562 ] 595 S. Puttnins, S. Jander, A. Wehrmann, G. Benndorf, M. Stölzel, A. Müller, H. von Wenckstern, F. Daume, A. Rahm, M. Grundmann Breakdown characteristics of flexible Cu(In,Ga)Se2 solar cells
 Sol. Energy Mat. Sol. Cells 2014, 120(Part B), 506-511 [ | | IF: 4.63 ] 594 F. Schmidt, H. von Wenckstern, O. Breitenstein, R. Pickenhain, M. Grundmann Low Rate Deep Level Transient Spectroscopy: A powerful tool for defect characterization in wide bandgap semiconductors
 Sol. St. Electr. 2014, 92, 40-46 [ | | IF: 1.482 ] 593 Lennart Fricke, Tammo Böntgen, Jan Lorbeer, Carsten Bundesmann, Rüdiger Schmidt-Grund, Marius Grundmann An extended Drude model for the in-situ spectroscopic ellipsometry analysis of ZnO thin layers and surface modifications
 Thin Solid Films 2014, 571(3), 437-441 [ | | IF: 1.604 ] 592 Marius Grundmann, Friedrich-Leonard Schein, Robert Karsthof, Peter Schlupp, Holger von Wenckstern Several Approaches to Bipolar Oxide Diodes With High Rectification Adv. Sci. Technol. 2014, 93, 252-259 [ | ] 591 Marius Grundmann Amorphous semiconductor diodes - A new paradigm
BuildMoNa Annual Report 2014 2014, p. 28-31 [ | link ] 590 Report of The Physics Institutes of Universität Leipzig 2013
Universität Leipzig, M. Grundmann, ed. [ | link ] 589 C.P. Dietrich, M. Grundmann Pulsed-laser deposition growth of ZnO NWs
Wide Band Gap Semiconductor Nanowires: Low-Dimensionality Effects and Growth, Vincent Consonni, Guy Feuillet eds. 2014, p. 303-323 (Wiley-ISTE, 2014), ISBN 978-1-84821-597-9 [ | link | ] 588 Michael Lorenz, Martin Lange, Christian Kranert, Christof P. Dietrich, Marius Grundmann Optical properties of and optical devices from ZnO-based nanostructures
Zinc Oxide Nanostructures: Advances and Applications 2014, p. 43-99, M. Willander, ed. (Pan Stanford Publishing, Singapore, 2014), ISBN 9789814411332 [ | link | | extra ] 587 Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann Energy-selective multichannel ultraviolet photodiodes based on (Mg,Zn)O
 Appl. Phys. Lett. 2013, 103(17), 171111:1-4 [ | | IF: 3.794 ] 586 F. Schmidt, S. Müller, H. von Wenckstern, C.P. Dietrich, R. Heinhold, M.W. Allen, M. Grundmann Comparative Study of Deep Defects in ZnO Microwires, Thin Films and Bulk Single Crystals
 Appl. Phys. Lett. 2013, 103(6), 062102:1-4 [ | | IF: 3.794 ] 585 K. Brachwitz, T. Böntgen, M. Lorenz, M. Grundmann On the transition point of thermally activated conduction of spinel-type MFe2O4 ferrite thin films (M=Zn,Co,Ni)
 Appl. Phys. Lett. 2013, 102(17), 172104:1-4 [ | | IF: 3.794 ] 584 Friedrich-Leonhard Schein, Holger von Wenckstern, Marius Grundmann Transparent p-CuI/n-ZnO heterojunction diodes
 Appl. Phys. Lett. 2013, 102(9), 092109:1-4 [ | | IF: 3.794 ] 583 Marcus Jenderka, José Barzola-Quiquia, Zhipeng Zhang, Heiko Frenzel, Marius Grundmann, Michael Lorenz Mott Variable Range Hopping and Weak Antilocalization Effect in Heteroepitaxial Na2IrO3 Thin Films
 arxiv: 2013, 1303.5245 [ | link ] 582 Holger von Wenckstern, Zhipeng Zhang, Florian Schmidt, Jörg Lenzner, Holger Hochmuth, Marius Grundmann Continuous composition spread using pulsed-laser deposition with a single, segmented target
 CrystEngComm 2013, 15(46), 10020-10027 [ | | IF: 3.879 ] 581 Fabian Johannes Klüpfel, Friedrich-Leonhard Schein, Michael Lorenz, Heiko Frenzel, Holger von Wenckstern, Marius Grundmann Comparison of ZnO-based JFET, MESFET, and MISFET
 IEEE Transact. Electr. Dev. 2013, 60(6), 1828-1833 [ | | IF: 2.062 ] 580 R. Schmidt-Grund, T. Lühmann, T. Böntgen, H. Franke, D. Opper, M. Lorenz, M. Grundmann Temperature dependent dielectric function in the NIR-VUV spectral range of alumina and yttria stabilized zirconia thin films
 J. Appl. Phys. 2013, 114(22), 223509:1-8 [ | | IF: 2.21 ] 579 T. Böntgen, K. Brachwitz, R. Schmidt-Grund, M. Lorenz, M. Grundmann Vacuum ultraviolett dielectric function of ZnFe2O4 thin films
 J. Appl. Phys. 2013, 113(7), 073503:1-4 [ | | IF: 2.21 ] 578 Alexander Lajn, Holger von Wenckstern, Marius Grundmann, Gerald Wagner, Pedro Barquinha, Elvira Fortunato, Rodrigo Martins Comparative study of transparent rectifying contacts on semiconducting oxide single crystals and amorphous thin films
 J. Appl. Phys. 2013, 113(4), 044511:1-13 [ | | IF: 2.21 ] 577 J. Zippel, M. Lorenz, M. Lange, M. Stölzel, G. Benndorf, M. Grundmann Growth control of nonpolar and polar ZnO/MgxZn1-xO quantum wells by pulsed-laser deposition
 J. Cryst. Growth 2013, 364, 81-87 [ | | IF: 1.552 ] 576 M. Lange, C.P. Dietrich, M Lorenz, M. Grundmann Excitonic and Optical Confinement in Microwire Heterostructures with Non-Polar (Zn,Cd)O/(Mg,Zn)O Multiple Quantum Wells
 J. Phys. Chem. C 2013, 117(17), 9020-9024 [ | | IF: 4.814 ] 575 J. Zippel, M. Lorenz, A. Setzer, M. Rothermel, D. Spemann, P. Esquinazi, M. Grundmann, G. Wagner, R. Denecke, A.A. Timopheev Defect-induced magnetism in homoepitaxial manganese stabilized zirconia thin films
 J. Phys. D: Appl. Phys. 2013, 46(27), 275002:1-10 [ | | IF: 2.772 ] 574 V.V. Lazenka, M. Lorenz, H. Modarresi, K. Brachwitz, P. Schwinkendorf, T. Böntgen, J. Vanacken, M. Ziese, M. Grundmann, V.V. Moshchalkov Effect of rare-earth ion doping on multiferroic properties of BiFeO3 thin films grown epitaxially on SrTiO3(100)
 J. Phys. D: Appl. Phys. 2013, 46(17), 175006:1-9 [ | | IF: 2.772 ] 573 Michael Lorenz, Christian Schmidt, Gabriele Benndorf, Tammo Böntgen, Holger Hochmuth, Rolf Böttcher, Andreas Pöppl, Daniel Spemann, Marius Grundmann Degenerate interface layers in epitaxial scandium-doped ZnO thin films
 J. Phys. D: Appl. Phys. 2013, 46(6), 065311:1-10 [ | | IF: 2.772 ] 572 Felix Daume, Stefan Puttnins, Christian Scheit, Hendrik Zachmann, Andreas Rahm, Alexander Braun, Marius Grundmann Damp heat treatment of Cu(In,Ga)Se2 solar cells with different sodium content
 Materials 2013, 6(12), 5478-5489 [ | | IF: 2.247 ] 571 Michael Lorenz, Marius Grundmann, Sandra Wickert, Reinhard Denecke Oxidation state of tungsten oxide thin films used as gate dielectric for zinc oxide based transistors
 Proc. Mat. Res. Soc. 2013, 1494, 1649:1-4 [ | ] 570 C. Kranert, R. Schmidt-Grund, M. Grundmann Surface- and point-defect-related Raman scattering in wurtzite semiconductors excited above the band gap
 New J. Phys. 2013, 15(11), 113048:1-22 [ | | IF: 4.063 ] 569 J. Zippel, M. Lorenz, G. Wagner, J. Lenzner, M. Grundmann Martensitic phase transition and subsequent surface corrugation in manganese stabilized zirconia thin films
 Phil. Mag. 2013, 93(18), 2329-2339 [ | | IF: 1.596 ] 568 Marko Stölzel, Alexander Müller, Gabriele Benndorf, Matthias Brandt, Michael Lorenz, Marius Grundmann Determination of unscreened exciton states in polar ZnO/(Mg,Zn)O quantum wells with strong quantum-confined Stark effect
 Phys. Rev. B 2013, 88(4), 045315:1-6 [ | | IF: 3.767 ] 567 Marcus Jenderka, José Barzola-Quiquia, Zhipeng Zhang, Heiko Frenzel, Marius Grundmann, Michael Lorenz Mott variable range hopping and weak antilocalization effect in heteroepitaxial Na2IrO3 thin films
 Phys. Rev. B 2013, 88(4), 045111:1-6 [ | link | | IF: 3.767 ] 566 Alexander Müller, Marius Grundmann Tunneling dynamics of excitons in random semiconductor alloys
 Phys. Rev. B 2013, 87(3), 035134:1-5 [ | | IF: 3.767 ] 565 Marius Grundmann, Friedrich-Leonhard Schein, Michael Lorenz, Tammo Böntgen, Jörg Lenzner, Holger von Wenckstern Cuprous Iodide - a p-type transparent semiconductor: history and novel applications
 Phys. Status Solidi A 2013, 210(9), 1671-1703 [ | | extra | IF: 1.648 ] 564 Heiko Frenzel, Alexander Lajn, Marius Grundmann One decade of fully transparent oxide thin film transistors: fabrication, performance and stability
 Phys. Status Solidi RRL 2013, 7(9), 605-615 [ | | extra | IF: 2.58 ] 563 Stefan Puttnins, Sergiu Levcenco, Klaus Schwarzburg, Gabriele Benndorf, Felix Daume, Andreas Rahm, Alexander Braun, Marius Grundmann, Thomas Unold Effect of Sodium on Material and Device Quality in Low Temperature Deposited Cu(In,Ga)Se2
 Sol. Energy Mat. Sol. Cells 2013, 119, 281-286 [ | | IF: 4.63 ] 562 A.A. Timopheev, A.M. Azevedo, N.A. Sobolev, K. Brachwitz, M. Lorenz, M. Ziese, P. Esquinazi, M. Grundmann Magnetic anisotropy of epitaxial zinc ferrite thin films grown by pulsed laser deposition
 Thin Solid Films 2013, 527, 273-277 [ | | IF: 1.604 ] 561 Marius Grundmann Transparent semiconductors - from materials growth to devices
BuildMoNa Annual Report 2013 2013, p. 29-33 [ | link ] 560 Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE CA 2765981 C (Canadian Intellectual Property Office, 2013) [ | link ] 559 Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu ihrer Herstellung und Verwendung
EP 2 446 484 B1 (European Patent Office, Munich, 2013) [ | link ] 558 M. Lorenz, M. Ziese, G. Wagner, P. Esquinazi, M. Grundmann Exchange bias and magnetoelectric coupling effects in ZnFe2O4-BaTiO3 composite thin films
Ext. Abstracts of the Nature Conference "Frontiers in Electronic Materials", Aachen, Germany (Nanosession: Multiferroic Thin Films and Heterostructures), J. Heber, D. Schlomm, Y. Tokura, R. Waser, M. Wuttig, eds. 2013, p. 334 (1 page) [ | | extra ] 557 S. Puttnins, H. Kempa, S. Englisch, R. Karsthof, F. Daume, A. Rahm, A. Braun, M. Grundmann Voltage Dependent Photocurrent in Low-Temperature Deposited CIGSe Solar Cells Proc. 28th European Photovoltaic Solar Energy Conference and Exhibition 2013, p. 2438-2442 [ | ] 556 F. Daume, A. Rahm, A. Braun, M. Grundmann Sodium in the Degradation Process of Cu(In,Ga)Se2 Solar Cells Proc. 28th European Photovoltaic Solar Energy Conference and Exhibition 2013, p. 2192-2198 [ | ] 555 Report of The Physics Institutes of Universität Leipzig 2012
Universität Leipzig, M. Grundmann, ed. [ | link ] 554 Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE US 8,445,904 B2 (United States Patent, 2013) [ | link ] 553 M. Lorenz, A. Reinhardt, H. von Wenckstern, M. Grundmann Design rules of (Mg,Zn)O-based thin-film transistors with high-κ WO3 dielectric gates
 Appl. Phys. Lett. 2012, 101(18), 183502:1-4 [ | | IF: 3.794 ] 552 Christof Peter Dietrich, Martin Lange, Tammo Böntgen, Marius Grundmann The corner effect in hexagonal whispering gallery microresonators
 Appl. Phys. Lett. 2012, 101(14), 141116:1-5 [ | | IF: 3.794 ] 551 R. Heinhold, H.-S. Kim, F. Schmidt, H. von Wenckstern, M. Grundmann, R.J. Mendelsberg, R.J. Reeves, S.M. Durbin, M.W. Allen Optical and defect properties of hydrothermal ZnO with low lithium contamination
 Appl. Phys. Lett. 2012, 101(6), 062105:1-4 [ | | IF: 3.794 ] 550 Florian Schmidt, Holger von Wenckstern, Daniel Spemann, Marius Grundmann On the radiation hardness of (Mg,Zn)O PLD thin films
 Appl. Phys. Lett. 2012, 101(1), 012103:1-4 [ | | IF: 3.794 ] 549 Christof Peter Dietrich, Martin Lange, Marko Stölzel, Marius Grundmann Microwire (Mg,Zn)O/ZnO and (Mg,Zn)O/(Cd,Zn)O non-polar quantum well heterostructures for cavity applications
 Appl. Phys. Lett. 2012, 100(3), 031110:1-4 [ | | IF: 3.794 ] 548 Michael Lorenz, Michael Ziese, Gerald Wagner, Jörg Lenzner, Christian Kranert, Kerstin Brachwitz, Holger Hochmuth, Pablo Esquinazi, Marius Grundmann Exchange bias and magnetoelectric coupling effects in ZnFe2O4-BaTiO3 composite thin films
 CrystEngComm 2012, 14(20), 6477-6486 [ | link | | IF: 3.879 ] 547 S. Müller, H. von Wenckstern, O. Breitenstein, J. Lenzner, M. Grundmann Microscopic identification of hot spots in multi-barrier Schottky contacts on pulsed laser deposition grown zinc oxide thin films
 IEEE Transact. Electr. Dev. 2012, 59(3), 536-541 [ | | IF: 2.062 ] 546 Friedrich-Leonhard Schein, Holger von Wenckstern, Heiko Frenzel, Marius Grundmann ZnO-based n-channel junction field-effect transistor with room-temperature fabricated p-type ZnCo2O4-gate
 IEEE Electron Device Letters 2012, 33(5), 676-678 [ | | IF: 2.789 ] 545 M. Lange, C.P. Dietrich, K. Brachwitz, T. Böntgen, M. Lorenz, M. Grundmann (Zn,Cd)O thin films for the application in heterostructures: structural and optical properties
 J. Appl. Phys. 2012, 112(10), 103517:1-6 [ | | IF: 2.21 ] 544 Marko Stölzel, Johannes Kupper, Matthias Brandt, Alexander Müller, Gabriele Benndorf, Michael Lorenz, Marius Grundmann Electronic and optical properties of ZnO/(Mg,Zn)O quantum wells with and without a distinct QCSE
 J. Appl. Phys. 2012, 111(6), 063701:1-10 [ | | IF: 2.21 ] 543 M. Noltemeyer, F. Bertram, Th. Hempel, B. Bastek, A. Polyakov, J. Christen, M. Brandt, M. Lorenz, M. Grundmann Excitonic Transport in ZnO
 J. Mat. Res. 2012, 27(17), 2225-2231 [ | | IF: 1.713 ] 542 Steve Durbin, Tim Veal, Marius Grundmann, Jamie Phillips Focus Issue on Oxide Semiconductors, Introduction
 J. Mat. Res. 2012, 27(17), 2179 (1 page) (Materials Research Society, Warrendale, PA, 2012) [ | | extra | IF: 1.713 ] 541 Focus Issue on Oxide Semiconductors
 J. Mat. Res. 2012, 27(17), Steve Durbin, Tim Veal, Marius Grundmann, Jamie Phillips, eds. (Materials Research Society, Warrendale, PA, 2012) [ | extra | IF: 1.713 ] 540 Helena Franke, Chris Sturm, Rüdiger Schmidt-Grund, Gerald Wagner, Marius Grundmann Ballistic propagation of exciton-polariton condensates in a ZnO-based microcavity
 New J. Phys. 2012, 14(1), 013037:1-12 [ | | IF: 4.063 ] 539 M. Lange, J. Kupper, C.P. Dietrich, M. Brandt, M. Stölzel, G. Benndorf, M. Lorenz, M. Grundmann Exciton localization and phonon sidebands in polar ZnO/MgZnO quantum wells
 Phys. Rev. B 2012, 86(4), 045318:1-7 [ | | IF: 3.767 ] 538 M. Grundmann, C.P. Dietrich Whispering gallery modes in deformed hexagonal resonators
 Phys. Status Solidi B 2012, 249(5), 871-879 [ | | extra | IF: 1.522 ] 537 M. Brandt, M. Bonholzer, M. Stölzel, G. Benndorf, D. Spemann, M. Lorenz, M. Grundmann Electrical transport in strained MgxZn1-xO:P thin films grown by pulsed laser deposition on ZnO (000-1)
 Phys. Status Solidi B 2012, 249(1), 82-90 [ | | IF: 1.522 ] 536 M. Schmidt, M. Ellguth, R. Karsthof, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, F.C.C. Ling On the T2 trap in zinc oxide thin films
 Phys. Status Solidi B 2012, 249(3), 588-595 [ | | IF: 1.522 ] 535 Jan Zippel, Michael Lorenz, Gabriele Benndorf, Marius Grundmann Persistent layer-by-layer growth for pulsed-laser homoepitaxy of (000-1) ZnO
 Phys. Status Solidi RRL 2012, 6(11), 433-435 [ | | IF: 2.58 ] 534 Martin Lange, Christof P. Dietrich, Kerstin Brachwitz, Marko Stölzel, Michael Lorenz, Marius Grundmann Visible emission from ZnCdO/ZnO multiple quantum wells
 Phys. Status Solidi RRL 2012, 6(1), 31-33 [ | | IF: 2.58 ] 533 Martin Noltemeyer, Frank Bertram, Thomas Hempel, Barbara Bastek, Juergen Christen, Matthias Brandt, Michael Lorenz, Marius Grundmann Excitonic transport in ZnO
 Proc. SPIE 2012, 8263, 82630X:1-7 [ | ] 532 Matthias Schmidt, Holger von Wenckstern, Rainer Pickenhain, Marius Grundmann On the investigation of electronic defect states in ZnO thin films by space charge spectroscopy with optical excitation
 Sol. St. Electr. 2012, 75, 48-54 [ | | IF: 1.482 ] 531 J.P. Richters, J. Kalden, M. Gnauck, C. Ronning, C.P. Dietrich, H. von Wenckstern, M. Grundmann, J. Gutowski, T. Voss Modal gain and its diameter dependence in single ZnO micro- and nanowires
 Semic. Sci. Technol. 2012, 27(1), 015005:1-5 [ | | IF: 2.098 ] 530 Marius Grundmann Quantum optics and round corners in Leipzig
BuildMoNa Annual Report 2012 2012, p. 33-37 [ | link ] 529 H. von Wenckstern, R. Schmidt-Grund, C. Bundesmann, A. Müller, C.P. Dietrich, M. Stölzel, M. Lange, M. Grundmann The (Mg,Zn)O Alloy
Handbook of Zinc Oxide and Related Materials, Vol. 1 Materials 2012, p. 257-320, Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855706 [ | link | | extra ] 528 Heiko Frenzel, Michael Lorenz, Friedrich-L. Schein, Alexander Lajn, Fabian J. Klüpfel, Tobias Diez, Holger von Wenckstern, Marius Grundmann Metal-semiconductor field-effect transistors and integrated circuits based on ZnO and related oxides
Handbook of Zinc Oxide and Related Materials, Vol. 2 Devices and Nano-Engineering 2012, p. 369-434, Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855744 [ | link | | extra ] 527 S. Puttnins, M. Purfürst, M. Hartung, H.-K. Lee, F. Daume, L. Hartmann, A. Rahm, A. Braun, M. Grundmann The Influence of Sodium on CIGSe Solar Cell Breakdown Characteristics Proc. 27th European Photovoltaic Solar Energy Conference and Exhibition 2012, p. 2219-2221 [ | ] 526 Report of The Physics Institutes of Universität Leipzig 2011
Universität Leipzig, M. Grundmann, ed. [ | link ] 525 Michael Lorenz, Holger von Wenckstern, Marius Grundmann Tungsten oxide as gate dielectric for highly transparent and temperature-stable zincoxide-based thin-film transistors
 Adv. Mater. 2011, 23(45), 5383-5386 [ | | IF: 18.96 ] 524 C. Kranert, T. Böntgen, R. Schmidt‐Grund, M. Brandt, S. Schöche, C. Sturm, H. Hochmuth, M. Lorenz, M. Grundmann Structural properties of BaTiO3/ZnO heterostructures and interfaces
 AIP Conf. Proc. 2011, 1399, 451-452 (AIP Publishing LLC, New York) [ | ] 523 C. Sturm, H. Hilmer, R. Schmidt‐Grund, M. Grundmann Occupation behaviour of the lower exciton-polariton branch in ZnO-based microresonators
 AIP Conf. Proc. 2011, 1399, 447-448 (AIP Publishing LLC, New York) [ | ] 522 C.P. Dietrich, M. Grundmann Comment on "Exciton-polariton microphotoluminescence and lasing from ZnO whispering-gallery mode microcavities" [Appl. Phys. Lett. 98, 161110 (2011)]
 Appl. Phys. Lett. 2011, 99(13), 136101 (1 page) [ | link | | extra | IF: 3.794 ] 521 Zh. Zhang, H. von Wenckstern, M. Schmidt, M. Grundmann Wavelength selective metal-semiconductor-metal photodetectors based on (Mg,Zn)O-heterostructures
 Appl. Phys. Lett. 2011, 99(8), 083502:1-3 [ | | IF: 3.794 ] 520 C.P. Dietrich, M. Lange, F.J. Klüpfel, H. von Wenckstern, R. Schmidt-Grund, M. Grundmann Strain distribution in bent ZnO microwires
 Appl. Phys. Lett. 2011, 98(3), 031105:1-3 [ | link | | IF: 3.794 ] 519 Michael Bachmann, Karsten Goede, Annette G. Beck-Sickinger, Marius Grundmann, Anders Irbäck, Wolfhard Janke Microscopic Mechanism of Specific Peptide Adhesion to Semiconductor Substrates
 arxiv: 2011, 1107.1208 [ | link ] 518 Alexander Müller, Michael Lorenz, Kerstin Brachwitz, Jörg Lenzner, Kai Mittwoch, Wolfgang Skorupa, Marius Grundmann, Thomas Höche Fresnoite Thin Films grown by Pulsed Laser Deposition: Photoluminescence and Laser Crystallization
 CrystEngComm 2011, 13(21), 6377-6385 [ | | extra | IF: 3.879 ] 517 A. Lajn, T. Diez, F. Schein, H. Frenzel, H. von Wenckstern, M. Grundmann Light and temperature stability of fully transparent ZnO-based inverter circuits
 IEEE Electron Device Letters 2011, 32(4), 515-517 [ | | IF: 2.789 ] 516 J. Zippel, M. Lorenz, J. Lenzner, M. Grundmann, T. Hammer, A. Jacquot, H. Böttner Electrical transport and optical emission of MnxZr1-xO2 (0<x<0.5) thin films
 J. Appl. Phys. 2011, 110(4), 043706:1-6 [ | | IF: 2.21 ] 515 C.C. Dey, S. Dey, S.C. Bedi, S.K. Das, M. Lorenz, M. Grundmann, J. Vogt, T. Butz Hafnium Oxide Thin Films Studied by Time Differential Perturbed Angular Correlations
 J. Appl. Phys. 2011, 109(11), 113918:1-6 [ | | IF: 2.21 ] 514 F.J. Klüpfel, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors
 J. Appl. Phys. 2011, 109(7), 074515:1-4 [ | | IF: 2.21 ] 513 C.P. Dietrich, M. Brandt, M. Lange, J. Kupper, T. Böntgen, H. von Wenckstern, M. Grundmann Defect properties of ZnO and ZnO:P microwires
 J. Appl. Phys. 2011, 109(1), 013712:1-5 [ | | IF: 2.21 ] 512 M. Lange, C.P. Dietrich, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, M. Grundmann Thermal stability of ZnO/ZnCdO/ZnO double heterostructures grown by pulsed laser deposition
 J. Cryst. Growth 2011, 328(1), 13-17 [ | | IF: 1.552 ] 511 A. Lajn, M. Schmidt, H. von Wenckstern, M. Grundmann Erratum: Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO
 J. Electr. Mat. 2011, 40(4), 477 (1 page) [ | | IF: 1.635 ] 510 A. Lajn, M. Schmidt, H. von Wenckstern, M. Grundmann Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO
 J. Electr. Mat. 2011, 40, 473-476 [ | | IF: 1.635 ] 509 M. Lange, C.P. Dietrich, J. Zúñiga-Pérez, H. von Wenckstern, M. Lorenz, M. Grundmann MgZnO/ZnO quantum well nanowire heterostructures with large confinement energies
 J. Vac. Sci. Technol. A 2011, 29(3), 03A104:1-5 [ | | IF: 1.432 ] 508 C.P. Dietrich, M. Lange, C. Sturm, R. Schmidt-Grund, M. Grundmann One- and two-dimensional cavity modes in ZnO microwires
 New J. Phys. 2011, 13(10), 103021:1-9 [ | | IF: 4.063 ] 507 Chris Sturm, Helena Hilmer, Rüdiger Schmidt-Grund, Marius Grundmann Exciton-polaritons in a ZnO-based microcavity: polarization dependence and non-linear occupation
 New J. Phys. 2011, 13(3), 033014:1-17 [ | | IF: 4.063 ] 506 C. Sturm, H. Hilmer, B. Rheinländer, R. Schmidt-Grund, M. Grundmann Cavity-photon dispersion in one-dimensional confined microresonators with an optically anisotropic cavity material
 Phys. Rev. B 2011, 83(20), 205301:1-12 [ | | IF: 3.767 ] 505 M. Ellguth, M. Schmidt, R. Pickenhain, M. Grundmann Characterization of point defects in ZnO thin films by Optical Deep Level Transient Spectroscopy
 Phys. Status Solidi B 2011, 248(4), 941-949 [ | | IF: 1.522 ] 504 M. Grundmann Formation of Epitaxial Domains: Unified Theory and Survey of Experimental Results
 Phys. Status Solidi B 2011, 248(4), 805-824 [Editor's Choice] [ | link | | extra | IF: 1.522 ] 503 Matthias Schmidt, Kerstin Brachwitz, Florian Schmidt, Martin Ellguth, Holger von Wenckstern, Rainer Pickenhain, Marius Grundmann, Gerhard Brauer, Wolfgang Skorupa Nickel-related defects in ZnO - A deep-level transient spectroscopy and photo-capacitance study
 Phys. Status Solidi B 2011, 248(8), 1949-1955 [ | | IF: 1.522 ] 502 M. Lorenz, M. Brandt, K. Mexner, K. Brachwitz, M. Ziese, P. Esquinazi, H. Hochmuth, M. Grundmann Ferrimagnetic ZnFe2O4 thin films on SrTiO3 single crystals with highly tunable electrical conductivity
 Phys. Status Solidi RRL 2011, 5(12), 438-440 [ | | IF: 2.58 ] 501 M. Brandt, H. von Wenckstern, M. Stölzel, H. Hochmuth, M. Lorenz, M. Grundmann Semiconducting oxide heterostructures
 Semic. Sci. Technol. 2011, 26(1), 014040:1-9 [ | | IF: 2.098 ] 500 T. Böntgen, S. Schöche, R. Schmidt-Grund, C. Sturm, M. Brandt, H. Hochmuth, M. Lorenz, M. Grundmann Optical properties of BaTiO3/ZnO heterostructures under the effect of an applied bias
 Thin Solid Films 2011, 519(9), 2933-2935 [ | | IF: 1.604 ] 499 R. Schmidt-Grund, P. Kühne, C. Czekalla, D. Schumacher, C. Sturm, M. Grundmann Determination of the refractive index of single crystal bulk samples and micro-structures
 Thin Solid Films 2011, 519(9), 2777-2781 [ | | IF: 1.604 ] 498 T. Höche, M. Lorenz, A. Müller, M. Grundmann, K. Mittwoch Laser patterning of thin films for luminescence applications 18th European Microelectronics and Packaging Conference (EMPC) 2011, p. 1-5, ISBN 978-1-4673-0694-2 [ | link ] 497 Marius Grundmann Oxide-based novel electronic and photonic building blocks
BuildMoNa Annual Report 2011 2011, p. 36-39 [ | link ] 496 H. Frenzel, A. Lajn, H. von Wenckstern, M. Grundmann Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu seiner Herstellung und Verwendung
DE 10 2009 030 045 B3 (Deutsches Patent- und Markenamt, München, 2011) [ | link ] 495 Michael Lorenz, Holger Hochmuth, Christoph Grüner, Helena Hilmer, Alexander Lajn, Daniel Spemann, Matthias Brandt, Jan Zippel, Rüdiger Schmidt-Grund, Holger von Wenckstern, Marius Grundmann Oxide thin film heterostructures on large area, with flexible doping, low dislocation density and abrupt interfaces - grown by Pulsed Laser Deposition
Laser Chemistry 2011, 2011, 140976:1-27 (Hindawi, New York, 2011) [ | ] 494 F. Daume, C. Scheit, S. Puttnins, A. Rahm, M. Grundmann Application of Series Resistance Imaging Techniques To Cu(In,Ga)Se2 Solar Cells Proc. 26th European Photovoltaic Solar Energy Conference and Exhibition 2011, p. 2955-2957 [ | ] 493 S. Puttnins, S. Jander, K. Pelz, S. Heinker, F. Daume, A. Rahm, A. Braun, M. Grundmann The Influence of Front Contact and Buffer Layer Properties on CIGSe Solar Cell Breakdown Characteristics Prof. 26th European Photovoltaic Solar Energy Conference and Exhibition 2011, p. 2432-2434 [ | ] 492 Report of The Physics Institutes of Universität Leipzig 2010
Universität Leipzig, M. Grundmann, ed. [ | link ] 491 Marius Grundmann The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 2nd edition
(Springer, Heidelberg, 2010), ISBN 978-3-642-13883-6 [ | link | | extra ] 490 Marius Grundmann Nanooptik (euroforum fachwissen/IIR, 2010) [ | link ] 489 M. Bachmann, K. Goede, A.G. Beck-Sickinger, M. Grundmann, A. Irbäck, W. Janke Mikroskopischer Mechanismus der spezifischen Adhäsion von Peptiden an Halbleitersubstraten
 Angew. Chemie 2010, 122(49), 9721-9724 [ | | extra ] 488 M. Bachmann, K. Goede, A.G. Beck-Sickinger, M. Grundmann, A. Irbäck, W. Janke Microscopic Mechanism of Specific Peptide Adhesion to Semiconductor Substrates
 Angew. Chemie Int. Ed. 2010, 49(49), 9530-9533 [ | | extra | IF: 13.734 ] 487 H. Frenzel, A. Lajn, H. von Wenckstern, M. Lorenz, F. Schein, Zh. Zhang, M. Grundmann Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and their Application in Transparent Integrated Circuits
 Adv. Mater. 2010, 22(47), 5332-5349 [ | | extra | IF: 18.96 ] 486 M. Lorenz, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann, P. Barquinha, R. Martins, E. Fortunato Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films
 Appl. Phys. Lett. 2010, 97(24), 243506:1-3 [ | | IF: 3.794 ] 485 D. Lausch, K. Petter, R. Bakowskie, C. Czekalla, J. Lenzner, H. von Wenckstern, M. Grundmann Identification of Pre-Breakdown Mechanism of Silicon Solar Cells at Low Reverse Voltages
 Appl. Phys. Lett. 2010, 97(7), 073506:1-3 [ | | IF: 3.794 ] 484 M. Brandt, M. Lange, M. Stölzel, A. Müller, G. Benndorf, J. Zippel, J. Lenzner, M. Lorenz, M. Grundmann Control of interface abruptness of polar MgZnO/ZnO quantum wells grown by pulsed laser deposition
 Appl. Phys. Lett. 2010, 97(5), 052101:1-3 [ | | IF: 3.794 ] 483 H. Frenzel, F. Schein, A. Lajn, H. von Wenckstern, M. Grundmann High-gain integrated inverters based on ZnO MESFET technology
 Appl. Phys. Lett. 2010, 96(11), 113502:1-3 [ | | IF: 3.794 ] 482 H. Frenzel, A. Lajn, H. von Wenckstern, M. Grundmann Ultrathin gate-contacts for MESFET devices: An alternative approach in transparent electronics
 J. Appl. Phys. 2010, 107(11), 114515:1-6 [ | | IF: 2.21 ] 481 A.O. Ankiewicz, J.S. Martins, M.C. Carmo, M. Grundmann, S. Zhou, H. Schmidt, N.A. Sobolev Ferromagnetic resonance on metal nanocrystals in Fe and Ni implanted ZnO
 J. Appl. Phys. 2010, 107(9), 09B518:1-3 [ | | IF: 2.21 ] 480 M. Lange, C. Dietrich, C. Czekalla, J. Zippel, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, M. Grundmann Luminescence Properties of ZnO/Zn1-xCdxO/ZnO double heterostructures
 J. Appl. Phys. 2010, 107(9), 093530:1-8 [ | | IF: 2.21 ] 479 A. Müller, M. Stölzel, G. Benndorf, M. Lorenz, M. Grundmann Origin of the near-band-edge luminescence in MgxZn1-xO
 J. Appl. Phys. 2010, 107(1), 013704:1-6 [ | | IF: 2.21 ] 478 S. Lautenschlaeger, S. Eisermann, M.N. Hofmann, U. Roemer, M. Pinnisch, A. Laufer, B.K. Meyer, H. von Wenckstern, A. Lajn, F. Schmidt, M. Grundmann, J. Blaesing, A. Krost Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers
 J. Cryst. Growth 2010, 312(14), 2078-2082 [ | | IF: 1.552 ] 477 A. Lajn, H. von Wenckstern, G. Benndorf, C.P. Dietrich, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films
 J. Electr. Mat. 2010, 39, 595-600 [ | | IF: 1.635 ] 476 H. von Wenckstern, K. Brachwitz, M. Schmidt, C.P. Dietrich, M. Ellguth, M. Stölzel, M. Lorenz, M. Grundmann The E3 defect in MgxZn1-xO
 J. Electr. Mat. 2010, 39, 584-588 [ | | IF: 1.635 ] 475 J. Chai, R.J. Mendelsberg, R.J. Reeves, J. Kennedy, H. von Wenckstern, M. Grundmann, K. Doyle, T.H. Meyers, S.M. Durbin Identification of a deep acceptor level in ZnO due to silver doping
 J. Electr. Mat. 2010, 39, 577-583 [ | | IF: 1.635 ] 474 H. von Wenckstern, S. Müller, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann Dielectric passivation of ZnO-based Schottky diodes
 J. Electr. Mat. 2010, 39, 559-562 [ | | IF: 1.635 ] 473 Q.Y. Xu, S.Q. Zhou, D. Bürger, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt Electrical control of magnetoresistance in highly insulating Co-doped ZnO
 Jpn. J. Appl. Phys. 2010, 49(4R), 043002:1-4 [ | | IF: 1.067 ] 472 J. Zippel, S. Heitsch, M. Stölzel, A. Müller, H. von Wenckstern, G. Benndorf, M. Lorenz, H. Hochmuth, M. Grundmann Optical properties of homo- and heteroepitaxial ZnO/MgxZn1-xO quantum wells grown by pulsed laser deposition
 J. Lumin. 2010, 130(3), 520-526 [ | | IF: 2.144 ] 471 S. Acharya, S. Chuothe, C. Sturm, H. Graener, R. Schmidt-Grund, M. Grundmann, G. Seifert Charge carrier dynamics of ZnO and ZnO-BaTiO3 thin films J. Phys. Conf. Ser. 2010, 210, 012048:1-4 [ | ] 470 C. Sturm, H. Hilmer, R. Schmidt-Grund, M. Grundmann Polarization behavior of the exciton-polariton emission of ZnO-based microresonators
 Proc. Mat. Res. Soc. 2010, 1208E, 1208-O18-08:1-6 [ | ] 469 H. von Wenckstern, Z.P. Zhang, M. Lorenz, C. Czekalla, H. Frenzel, A. Lajn, M. Grundmann Light beam induced current measurements on ZnO Schottky diodes and MESFETs
 Proc. Mat. Res. Soc. 2010, 1201, 1201-H04-02:1-6 [ | ] 468 C.P. Dietrich, A. Müller, M. Stölzel, M. Lange, G. Benndorf, H. von Wenckstern, M. Grundmann Bound-exciton recombination in MgxZn1-xO thin films
 Proc. Mat. Res. Soc. 2010, 1201, 1201-H03-08:1-6 [ | ] 467 M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern, F. Schein, M. Lorenz ZnO-based MESFET Devices
 Proc. Mat. Res. Soc. 2010, 1201, 1201-H01-01:1-5 [ | ] 466 C.P. Dietrich, M. Lange, G. Benndorf, J. Lenzner, M. Lorenz, M. Grundmann Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys
 New J. Phys. 2010, 12(3), 033030:1-10 [ | | IF: 4.063 ] 465 M. Mäder, S. Perlt, T. Höche, H. Hilmer, M. Grundmann, B. Rauschenbach Gold nanostructure matrices by diffraction mask-projection laser ablation: extension to previously inaccessible substrates
 Nanotechnology 2010, 21(17), 175304:1-5 [ | | IF: 3.842 ] 464 Jan Zippel, Michael Lorenz, Annette Setzer, Gerald Wagner, Nikolai Sobolev, Pablo Esquinazi, Marius Grundmann Defect induced ferromagnetism in undoped and Mn-doped zirconia thin films
 Phys. Rev. B 2010, 82(12), 125209:1-5 [ | | IF: 3.767 ] 463 Venkata M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, H. Schmidt, N. Ianno, M. Schubert Interface polarization coupling in piezoelectric-semiconductor ferroelectric heterostructures
 Phys. Rev. B 2010, 81(19), 195307:1-12 [ | | IF: 3.767 ] 462 M. Brandt, H. von Wenckstern, G. Benndorf, M. Lange, C.P. Dietrich, C. Kranert, C. Sturm, R. Schmidt-Grund, H. Hochmuth, M. Lorenz, M. Grundmann, M.R. Wagner, M. Alic, C. Nenstiel, A. Hoffmann Identification of a donor-related recombination channel in ZnO thin films
 Phys. Rev. B 2010, 81(7), 073306:1-4 [ | | IF: 3.767 ] 461 Marius Grundmann, Tammo Böntgen, Michael Lorenz The Occurrence of Rotation Domains in Heteroepitaxy
 Phys. Rev. Lett. 2010, 105(14), 146102:1-4 [ | | IF: 7.645 ] 460 W. Anwand, G. Brauer, T.E. Cowan, V. Heera, H. Schmidt, W. Skorupa, H. von Wenckstern, G. Benndorf, M. Grundmann Structural characterization of H plasma-doped ZnO single crystals by Hall measurements and photoluminescence studies
 Phys. Status Solidi A 2010, 207(11), 2426-2431 [ | | IF: 1.648 ] 459 M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, H. von Wenckstern Transparent Semiconducting Oxides: Materials and Devices
 Phys. Status Solidi A 2010, 207(6), 1437-1449 [ | link | | extra | IF: 1.648 ] 458 J. Zippel, M. Stölzel, A. Müller, G. Benndorf, M. Lorenz, H. Hochmuth, M. Grundmann Electronic coupling in ZnO/MgxZn1-xO double quantum wells grown by pulsed laser deposition
 Phys. Status Solidi B 2010, 247(2), 398-404 [ | | IF: 1.522 ] 457 O. Albrecht, R. Zierold, C. Patzig, J. Bachmann, C. Sturm, B. Rheinländer, M. Grundmann, D. Görlitz, B. Rauschenbach, K. Nielsch Magnetic tubular nanostructures based on glancing-angle deposited templates and atomic layer deposition
 Phys. Status Solidi B 2010, 247(6), 1365-1371 [ | | IF: 1.522 ] 456 R. Schmidt-Grund, H. Hilmer, A. Hinkel, C. Sturm, B. Rheinländer, V. Gottschalch, M. Lange, J. Zúñiga-Pérez, M. Grundmann Two-dimensional confined photonic wire resonators - strong light-matter coupling
 Phys. Status Solidi B 2010, 247(6), 1351-1364 [ | | IF: 1.522 ] 455 R. Kaden, G. Wagner, C. Strum, R. Schmidt-Grund, H. von Wenckstern, A. Prager, K. Bente, M. Grundmann Synthesis and physical properties of cylindrite micro tubes and lamellae
 Phys. Status Solidi B 2010, 247(6), 1335-1350 [ | | IF: 1.522 ] 454 C. Czekalla, T. Nobis, A. Rahm, B. Cao, J. Zúñiga-Pérez, C. Sturm, R. Schmidt-Grund, M. Lorenz, M. Grundmann Whispering gallery modes in ZnO nano- and microwires
 Phys. Status Solidi B 2010, 247(6), 1282-1293 [ | | IF: 1.522 ] 453 M. Lorenz, A. Rahm, B. Cao, J. Zúñiga-Pérez, E.M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, M. Grundmann Self-organized growth of ZnO-based nano- and microstructures
 Phys. Status Solidi B 2010, 247(6), 1265-1281 [ | | IF: 1.522 ] 452 M. Grundmann Architecture of nano- and microdimensional building blocks
 Phys. Status Solidi B 2010, 247(6), 1257-1264 [ | | IF: 1.522 ] 451 Scientific report of the Forschergruppe 522
 Phys. Status Solidi B 2010, 247(6), 1257-1392, M. Grundmann, ed. [ | extra | IF: 1.522 ] 450 M. Schmidt, M. Ellguth, F. Schmidt, Th. Lüder, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa Defects in a nitrogen-implanted ZnO thin film
 Phys. Status Solidi B 2010, 247(5), 1220-1226 [ | | IF: 1.522 ] 449 C. Scarlat, K.M. Mok, S. Zhou, M. Vinnichenko, M. Lorenz, M. Grundmann, M. Helm, M. Schubert, H. Schmidt Voigt effect measurement on PLD grown NiO thin films
 Phys. Status Solidi C 2010, 7(2), 334-337 [ | ] 448 G. Zimmermann, M. Lange, B. Cao, M. Lorenz, M. Grundmann Resistivity control of ZnO nanowires by Al-doping
 Phys. Status Solidi RRL 2010, 4(3-4), 82-84 [ | | IF: 2.58 ] 447 H. Hilmer, C. Sturm, R. Schmidt-Grund, B. Rheinländer, M. Grundmann Observation of strong light-matter coupling by spectroscopic ellipsometry
 Superlatt. Microstr. 2010, 47(1), 19-23 [ | | IF: 1.564 ] 446 C.P. Dietrich, M. Lange, G. Benndorf, H. von Wenckstern, M. Grundmann Donor-acceptor pair recombination in non-stoichiometric ZnO thin films
 Sol. St. Comm. 2010, 150(7-8), 379-382 [ | | IF: 1.534 ] 445 M. Lorenz, M. Brandt, M. Lange, G. Benndorf, H. von Wenckstern, D. Klimm, M. Grundmann Homoepitaxial MgxZn1-xO (0 ≤ x ≤ 0.22) thin films grown by pulsed laser deposition
 Thin Solid Films 2010, 518(16), 4623-4629 [ | | IF: 1.604 ] 444 Marius Grundmann ZnO-based alloys for nano-scale optoelectronic devices
BuildMoNa Annual Report 2010 2010, p. 34-39 [ | link ] 443 B. Cao, J. Zúñiga-Pérez, C. Czekalla, H. Hilmer, J. Lenzner, N. Boukos, A. Travlos, M. Lorenz, M. Grundmann Tuning the lateral density of ZnO nanowire arrays and its application as physical templates for radial nanowire heterostructures J. Mat. Chem. 2010, 20(19), 3848-3854 [ | ] 442 B.Q. Cao, M. Lorenz, G. Zimmermann, C. Czekalla, M. Brandt, H. von Wenckstern, M. Grundmann p-type Phosphorus Doped ZnO Wires for Optoelectronic Applications
Nanowires 2010, p. 117-132, P. Prete, ed., ISBN 978-953-7619-79-4 [ | | extra ] 441 M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE PCT Application WO 2010/149616 A1 [ | link ] 440 S. Puttnins, H. Zachmann, A. Rahm, G. Benndorf, M. Grundmann Quantum Efficiency Analysis of Ion Beam Assisted Deposition of Cu(In,Ga)Se2 Solar Cells on Flexible Substrates Proc. 25th European Photovoltaic Solar Energy Conference and Exhibition 2010, p. 3369-3371 [ | ] 439 Report of The Physics Institutes of Universität Leipzig 2009
Universität Leipzig, M. Grundmann, ed. [ | link ] 438 H. Frenzel, M. Lorenz, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Grundmann ZnO-based metal-semiconductor field-effect transistors on glass substrates
 Appl. Phys. Lett. 2009, 95(15), 153503:1-3 [ | | IF: 3.794 ] 437 M. Voora, T. Hofmann, M. Brandt, M. Lorenz, N. Ashkenov, M. Grundmann, M. Schubert Electrical properties of ZnO-BaTiO3-ZnO heterostructures with asymmetric interface charge distribution
 Appl. Phys. Lett. 2009, 95(8), 082902:1-3 [ | | IF: 3.794 ] 436 V.M. Voora, T. Hofman, M. Schubert, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures
 Appl. Phys. Lett. 2009, 94(14), 142904:1-3 [ | | IF: 3.794 ] 435 Shengqiang Zhou, K. Potzger, Qingyu Xu, G. Talut, M. Lorenz, W. Skorupa, M. Helm, J. Fassbender, M. Grundmann, H. Schmidt Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?
 arxiv: 2009, 0907.3536 [ | link ] 434 H. von Wenckstern, J. Zippel, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann Two-dimensional electron gases in MgZnO/ZnO heterostructures
 Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 2009, 1199, 99-100 [ | ] 433 H. Frenzel, H. von Wenckstern, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann Interface effects in ZnO metal-insulator-semiconductor and metal-semiconductor structures
 Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 2009, 1199, 469-470 [ | ] 432 R. Schmidt-Grund, C. Sturm, H. Hilmer, J. Sellmann, C. Czekalla, B. Rheinländer, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann Exciton-polaritons in ZnO microcavity resonators
 Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 2009, 1199, 175-176 [ | ] 431 H. Hilmer, J. Sellmann, Ch. Sturm, R. Schmidt-Grund, B. Rheinländer, H. Hochmuth, J. Lenzner, M. Lorenz, M. Grundmann PLD Growth of High Reflective All-Oxide Bragg Reflectors for ZnO Resonators
 Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 2009, 1199, 151-152 [ | ] 430 H. von Wenckstern, A. Lajn, A. Laufer, B.K. Meyer, H. Hochmuth M. Lorenz, M. Grundmann Ag related defect state in ZnO thin films
 Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 2009, 1199, 122-123 [ | ] 429 M.W. Allen, S.M. Durbin, X. Weng, J.M. Redwing, K. Sarpatwari, S.E. Mohney, H. von Wenckstern, M. Grundmann Temperature Dependent Properties of Nearly Ideal ZnO Schottky Diodes
 IEEE Transact. Electr. Dev. 2009, 56(9), 2160-2164 [ | | IF: 2.062 ] 428 M. Grundmann, C.P. Dietrich Lineshape Theory of Photoluminescence from Semiconductor Alloys
 J. Appl. Phys. 2009, 106(12), 123521:1-10 [ | | IF: 2.21 ] 427 Q.Y. Xu, S. Zhou, D. Markó, K. Potzger, J. Fassbender, M. Vinnichenko, M. Helm, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt Paramagnetism in Co-doped ZnO films
 J. Phys. D: Appl. Phys. 2009, 42(8), 085001:1-5 [ | | IF: 2.772 ] 426 M. Brandt, H. Frenzel, H. Hochmuth, M. Lorenz, M. Grundmann, J. Schubert Ferroelectric thin film field-effect transistors based on ZnO/BaTiO3 heterostructures
 J. Vac. Sci. Technol. B 2009, 27(3), 1789-1793 [ | | IF: 1.267 ] 425 C. Czekalla, C. Sturm, R. Schmidt-Grund, B. Cao, J. Zúñiga Pérez, M. Lorenz, M. Grundmann Optical characterization of zinc oxide microlasers and microwire core-shell heterostructures
 J. Vac. Sci. Technol. B 2009, 27(3), 1780-1783 [ | | IF: 1.267 ] 424 A. Lajn, H. von Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Wickert, C. Vogt, R. Denecke Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type ZnO
 J. Vac. Sci. Technol. B 2009, 27(3), 1769-1773 [ | | IF: 1.267 ] 423 M. Lange, J. Zippel, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann Temperature Dependence of Localization Effects of Excitons in ZnO/CdxZn1-xO/ZnO Double Heterostructures
 J. Vac. Sci. Technol. B 2009, 27(3), 1741-1745 [ | | IF: 1.267 ] 422 J. Zippel, J. Lenzner, G. Benndorf, M. Lange, H. Hochmuth, M. Lorenz, M. Grundmann Electronic coupling in MgxZn1-xO/ZnO double quantum wells
 J. Vac. Sci. Technol. B 2009, 27(3), 1735-1740 [ | | IF: 1.267 ] 421 C. Sturm, H. Hilmer, R. Schmidt-Grund, C. Czekalla, J. Sellmann, J. Lenzner, M. Lorenz, M. Grundmann Strong exciton-photon coupling in ZnO based resonators
 J. Vac. Sci. Technol. B 2009, 27(3), 1726-1730 [ | | IF: 1.267 ] 420 M. Lorenz, B. Cao, G. Zimmermann, G. Biehne, C. Czekalla, H. Frenzel, M. Brandt, H. von Wenckstern, M. Grundmann Stable p-type ZnO:P nanowire/n-type ZnO:Ga film junctions, reproducibly grown by two-step pulsed laser deposition
 J. Vac. Sci. Technol. B 2009, 27(3), 1693-1697 [ | | IF: 1.267 ] 419 M. Brandt, H. von Wenckstern, Ch. Meinecke, T. Butz, H. Hochmuth, M. Lorenz, M. Grundmann Dopant activation in homoepitaxial MgZnO:P thin films
 J. Vac. Sci. Technol. B 2009, 27(3), 1604-1608 [ | | IF: 1.267 ] 418 M. Schmidt, M. Ellguth, C. Czekalla, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa, M. Helm, Q. Gu, Ch.Ch. Ling Defects in zinc-implanted ZnO thin films
 J. Vac. Sci. Technol. B 2009, 27(3), 1597-1600 [ | | IF: 1.267 ] 417 R. Schmidt-Grund, A. Hinkel, H. Hilmer, J. Zúñiga-Pérez, C. Sturm, B. Rheinländer, M. Grundmann ZnO nano-pillar resonators with coaxial Bragg reflectors
 Proc. Mat. Res. Soc. 2009, 1178, 1178-AA10-13:1-7 [ | ] 416 C. Sturm, H. Hilmer, R. Schmidt-Grund, M. Grundmann Observation of strong exciton-photon coupling at temperatures up to 410 K
 New J. Phys. 2009, 11(7), 073044:1-12 [ | | IF: 4.063 ] 415 M. Willander, O. Nur, Q.X. Zhao, L.L. Yang, M. Lorenz, B.Q. Cao, J. Zúñiga-Pérez, C. Czekalla, G. Zimmermann, M. Grundmann, A. Bakin, A. Behrends, M. Al- Suleiman, A. Al-Shaer, A. Che Mofor, B. Postels, A. Waag, N. Boukos, A. Travlos, J. Guinard, D. Le Si Dang Zinc Oxide Nanorods Based Photonic Devices: Recent Progress in Growth, Light Emitting Diodes and Lasers
 Nanotechnology 2009, 20(33), 332001:1-40 [ | | IF: 3.842 ] 414 B.Q. Cao, J. Zúñiga-Pérez, N. Boukos, C. Czekalla, H. Hilmer, J. Lenzner, A. Travlos, M. Lorenz, M. Grundmann Homogeneous core/shell ZnO/MgZnO quantum well heterostructures on vertical ZnO nanowires
 Nanotechnology 2009, 20(30), 305701:1-8 [ | link | | extra | IF: 3.842 ] 413 M. Khalid, M. Ziese, A. Setzer, P. Esquinazi, M. Lorenz, H. Hochmuth, M. Grundmann, D. Spemann, T. Butz, G. Brauer, W. Anwand, G. Fischer, W.A. Adeagbo, W. Hergert, A. Ernst Defect-induced magnetic order in pure ZnO films
 Phys. Rev. B 2009, 80(3), 035331:1-5 [ | | IF: 3.767 ] 412 H. von Wenckstern, H. Schmidt, M. Brandt, A. Lajn, R. Pickenhain, M. Lorenz, M. Grundmann, D.M. Hofmann, A. Polity, B.K. Meyer, H. Saal, M. Binnewies, A. Börger, K.-D. Becker, V.A. Tikhomirov, K. Jug Anionic and cationic substitution in ZnO
 Prog. Sol. Stat. Chem. 2009, 37(2-3), 153-172 [ | | IF: 7.429 ] 411 A.O. Ankiewicz, W. Gehlhoff, J.S. Martins, A.S. Pereira, S. Pereira, A. Hoffmann, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, M.C. Carmo, T. Trindade, N.A. Sobolev Magnetic and structural properties of transition metal doped zinc-oxide nanostructures
 Phys. Status Solidi B 2009, 246(4), 766-770 [ | | IF: 1.522 ] 410 Frank Lipski, Sarad B. Thapa, Joachim Hertkorn, Thomas Wunderer, Stephan Schwaiger, Ferdinand Scholz, Martin Feneberg, Michael Wiedenmann, Klaus Thonke, Holger Hochmuth, Michael Lorenz, Marius Grundmann Studies towards freestanding GaN in hydride vapor phase epitaxy by in-situ etching of a sacrificial ZnO buffer layer
 Phys. Status Solidi C 2009, 6(52), S352-S355 [ | ] 409 Dominik Lausch, Kai Petter, Holger von Wenckstern, Marius Grundmann Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells
 Phys. Status Solidi RRL 2009, 3(2-3), 70-72 [ | | extra | IF: 2.58 ] 408 M. Lorenz, M. Brandt, G. Wagner, H. Hochmuth, G. Zimmermann, H. von Wenckstern, M. Grundmann MgZnO:P Homoepitaxy by Pulsed Laser Deposition: Pseudomorphic Layer-by-Layer Growth and High Electron Mobility
 Proc. SPIE 2009, 7217, 72170N:1-15 [ | ] 407 H. Frenzel, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Grundmann ZnO-based metal-semiconductor field-effect transistors with Ag-, Pt-, Pd-, and Au-Schottky gates
 Thin Solid Films 2009, 518(4), 1119-1123 [ | | IF: 1.604 ] 406 M. Brandt, H. von Wenckstern, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann Formation of a two-dimensional electron gas in MgZnO/ZnO heterostructures and quantum wells
 Thin Solid Films 2009, 518(4), 1048-1052 [ | | IF: 1.604 ] 405 Marius Grundmann Transparent oxide electronic devices
BuildMoNa Annual Report 2009 2009, p. 33-35 [ | link ] 404 R. Bakowskie, H. von Wenckstern, D. Lausch, M. Müller, K. Petter, M. Grundmann Thermal admittance spectroscopy of multicrystalline silicon wafers and solar cells Proc. 24th European Photovoltaic Solar Energy Conference 2009, p. 2100-2102 [ | ] 403 D. Lausch, K. Petter, R. Bakowskie, H. von Wenckstern, M. Grundmann Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells Proc. 24th European Photovoltaic Solar Energy Conference 2009, p. 2053-2055 [ | ] 402 Report of The Physics Institutes of Universität Leipzig 2008
Universität Leipzig, M. Grundmann, ed. [ | link ] 401 S.Q. Zhou, K. Potzger, Q.Y. Xu, G. Talut, M. Lorenz, W. Skorupa, M. Helm, J. Fassbender, M. Grundmann, H. Schmidt Ferromagnetic transition metal implanted ZnO: A diluted magnetic semiconductor? Vacuum 2009, 83(Suppl. 1), S13-S19 [ | link | ] 400 J. Bachmann, R. Zierold, Y.T. Chong, R. Hauert, Ch. Sturm, R. Schmidt-Grund, B. Rheinländer, M. Grundmann, U. Gösele, K. Nielsch Selbstkatalytische Atomlagenabscheidung von Siliciumdioxid
 Angew. Chemie 2008, 120(33), 6272-6274 [ | ] 399 J. Bachmann, R. Zierold, Y.T. Chong, R. Hauert, Ch. Sturm, R. Schmidt-Grund, B. Rheinländer, M. Grundmann, U. Gösele, K. Nielsch A Practical, Self-Catalytic, Atomic Layer Deposition of Silicon Dioxide
 Angew. Chemie Int. Ed. 2008, 47(33), 6177-6179 [ | | extra | IF: 13.734 ] 398 S. Zhou, Q. Xu, K. Potzger, G. Talut, R. Grötzschel, J. Fassbender, M. Vinnichenko, J. Grenzer, M. Helm, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt Room temperature ferromagnetism in carbon-implanted ZnO
 Appl. Phys. Lett. 2008, 93(23), 232507:1-3 [ | link | | IF: 3.794 ] 397 C. Czekalla, Chris Sturm, Rüdiger Schmidt-Grund, Bingqiang Cao, Michael Lorenz, Marius Grundmann Whispering Gallery Mode Lasing in Zincoxide Microwires
 Appl. Phys. Lett. 2008, 92(24), 241102:1-3 [ | | IF: 3.794 ] 396 H. Frenzel, A. Lajn, M. Brandt, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann ZnO metal-semiconductor field-effect transistors with Ag-Schottky-gates
 Appl. Phys. Lett. 2008, 92(19), 192108:1-3 [ | | IF: 3.794 ] 395 Q. Xu, H. Schmidt, S. Zhou, K. Potzger, M. Helm, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, Ch. Meinecke, M. Grundmann Room temperature ferromagnetism in ZnO films due to defects
 Appl. Phys. Lett. 2008, 92(8), 082508:1-3 [ | | IF: 3.794 ] 394 R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann Exciton-polariton formation at room temperature in a planar ZnO resonator structure
 Appl. Phys. A 2008, 93, 331-337 [ | | IF: 1.545 ] 393 Shengqiang Zhou, Qingyu Xu, Kay Potzger, Georg Talut, Rainer Groetzschel, Juergen Fassbender, Mykola Vinnichenko, Joerg Grenzer, Manfred Helm, Holger Hochmuth, Michael Lorenz, Marius Grundmann, Heidemarie Schmidt Room temperature ferromagnetism in carbon-implanted ZnO
 arxiv: 2008, 0811.3487 [ | link ] 392 N. Ghosh, J. Barzola Quiquia, Q. Xu, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt Andreev reflection and spin polarization measurement of Co/YBCO junction
 arxiv: 2008, 0804.0170 [ | link ] 391 S. Müller, C. Ronning, M. Lorenz, C. Czekalla, G. Benndorf, H. Hochmuth, M. Grundmann, H. Schmidt Intense white photoluminescence emission of V-implanted zinc oxide thin films
 J. Appl. Phys. 2008, 104(12), 123504:1-7 [ | | IF: 2.21 ] 390 M. Brandt, H. von Wenckstern, H. Schmidt, A. Rahm, G. Biehne, G. Benndorf, H. Hochmuth, M. Lorenz, Ch. Meinecke, T. Butz, M. Grundmann High electron mobility of phosphorous doped homoepitaxial ZnO thin films grown by pulsed laser deposition
 J. Appl. Phys. 2008, 104(1), 013708:1-6 [ | | IF: 2.21 ] 389 A.S. Pereira, S. Pereira, T. Trindade, A.O. Ankiewicz, M.C. Carmo, N.A. Sobolev, W. Gehlhoff, A. Hoffmann, M. Grundmann Surface modification of Co-doped ZnO nanocrystals and its effect on the magnetic properties
 J. Appl. Phys. 2008, 103(7), 07D140:1-3 [ | | IF: 2.21 ] 388 S.B. Thapa, J. Hertkorn, T. Wunderer, F. Lipski, F. Scholz, A. Reiser, Y. Xie, M. Feneberg, K. Thonke, R. Sauer, M. Dürrschnabel, L.D. Yao, D. Gerthsen, H. Hochmuth, M. Lorenz, M. Grundmann MOVPE growth of GaN around ZnO nanopillars
 J. Cryst. Growth 2008, 310(23), 5139-5142 [ | | IF: 1.552 ] 387 V.M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, M. Schubert Interface-charge-coupled polarization response of Pt-BaTiO3-ZnO-Pt heterojunctions: A physical model approach
 J. Electr. Mat. 2008, 37, 1029-1034 [ | | IF: 1.635 ] 386 R. Schmidt-Grund, B. Rheinländer, E.M. Kaidashev, M. Lorenz, M. Grundmann, D. Fritsch, M.M. Schubert, H. Schmidt, C.M. Herzinger Vacuum Ultraviolet Dielectric Function and Band Structure of ZnO
 J. Korean Phys. Soc. 2008, 53(1), 88-93 [ | | IF: 0.506 ] 385 Holger von Wenckstern, Matthias Brandt, Heidemarie Schmidt, Christian Hanisch, Gabriele Benndorf, Holger Hochmuth, Michael Lorenz, Marius Grundmann Homoepitaxial ZnO thin films by pulsed-laser deposition
 J. Korean Phys. Soc. 2008, 53(9), 3064-3067 [ | | IF: 0.506 ] 384 H. von Wenckstern, G. Biehne, M. Lorenz, M. Grundmann, F.D. Auret, W.E. Meyer, P.J. Janse van Rensburg, M. Hayes, J.M. Nel Dependence of trap concentrations in ZnO thin films on annealing conditions
 J. Korean Phys. Soc. 2008, 53(9), 2861-2863 [ | | IF: 0.506 ] 383 D. Fritsch, H. Schmidt, R. Schmidt-Grund, M. Grundmann Intensity of Optical Absorption Close to the Band Edge in Strained ZnO Films
 J. Korean Phys. Soc. 2008, 53(1), 123-126 [ | | IF: 0.506 ] 382 F.D. Auret, W.E. Meyer, P.J. Janse van Rensburg, M. Hayes, J.M. Nel, H. von Wenckstern, H. Hochmuth, G. Biehne, M. Lorenz, M. Grundmann Electronic properties of shallow level defects in ZnO grown by pulsed laser deposition J. Phys. Conf. Ser. 2008, 100, 042038:1-4 [ | ] 381 Q. Xu, H. Schmidt, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, Ch. Meinecke, M. Grundmann Room temperature ferromagnetism in Nd- and Mn-codoped ZnO films
 J. Phys. D: Appl. Phys. 2008, 41(10), 105012:1-5 [ | | IF: 2.772 ] 380 Venkata Voora, Tino Hofmann, Ann Kjerstad, Matthias Brandt, Michael Lorenz, Marius Grundmann, Mathias Schubert Interface-charge-coupled polarization response model of Pt-BaTiO3-ZnO-Pt heterojunctions: Physical parameters variation
 Proc. Mat. Res. Soc. 2008, 1074, I01-11:1-6 [ | ] 379 C. Czekalla, J. Guinard, C. Hanisch, B. Cao, E.M. Kaidashev, N. Boukos, A. Travlos, J. Renard, B. Gayral, D. Le Si Dang, M. Lorenz, M. Grundmann Spatial fluctuations of the optical emission from single ZnO/MgZnO nanowire quantum wells
 Nanotechnology 2008, 19(11), 115202:1-6 [ | link | | extra | IF: 3.842 ] 378 Q. Xu, L. Hartmann, S. Zhou, A. Mücklich, K. Potzger, M. Helm, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt Spin manipulation in Co doped ZnO
 Phys. Rev. Lett. 2008, 101(7), 076601:1-4 [ | | IF: 7.645 ] 377 M. Lorenz, G. Wagner, A. Rahm, H. Schmidt, H. Hochmuth, H. Schmid, W. Mader, M. Brandt, H. von Wenckstern, M. Grundmann Homoepitaxial ZnO Thin Films by PLD: Structural Properties
 Phys. Status Solidi C 2008, 5(10), 3280-3287 [ | ] 376 C. Sturm, T. Chavdarov, R. Schmidt-Grund, B. Rheinländer, C. Bundesmann, H. Hochmuth, M. Lorenz, M. Schubert, M. Grundmann Investigation of the free charge carrier properties at the ZnO-sapphire interface in a- plane ZnO films studied by generalized infrared ellipsometry
 Phys. Status Solidi C 2008, 5(5), 1350-1353 [ | ] 375 V.M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, M. Schubert Electrooptic ellipsometry study of piezoelectric BaTiO3-ZnO heterostructures
 Phys. Status Solidi C 2008, 5(5), 1328-1331 [ | ] 374 J. Sellmann, Ch. Sturm, R. Schmidt-Grund, Ch. Czekalla, J. Lenzner, H. Hochmuth, B. Rheinländer, M. Lorenz, M. Grundmann Structural and optical properties of ZrO2 and Al2O3 thin films and Bragg reflectors grown by pulsed laser deposition
 Phys. Status Solidi C 2008, 5(5), 1240-1243 [ | ] 373 B. Cao, M. Lorenz, M. Brandt, H. von Wenckstern, J. Lenzner, G. Biehne, M. Grundmann p-type conducting ZnO:P microwires prepared by direct carbothermal growth
 Phys. Status Solidi RRL 2008, 2(1), 37-39 [ | | IF: 2.58 ] 372 M. Mäder, J. W. Gerlach, T. Höche, C. Czekalla, M. Lorenz, M. Grundmann, B. Rauschenbach ZnO nanowall networks grown on DiMPLA pre-patterned thin gold films
 Phys. Status Solidi RRL 2008, 2(5), 200-202 [ | | IF: 2.58 ] 371 B. Q. Cao, M. Lorenz, H. von Wenckstern, C. Czekalla, M. Brandt, J. Lenzner, G. Benndorf, G. Biehne, M. Grundmann Phosphorus doped ZnO nanowires: acceptor-related cathodoluminescence and p-type conducting FET-characteristics
 Proc. SPIE 2008, 6895, 68950V:1-12 [ | ] 370 D. Hofstetter, Y. Bonetti, E. Baumann, F.R. Giorgetta, A.-H. El-Shaer, A. Bakin, A. Waag, R. Schmidt-Grund, M. Grundmann, M. Schubert Characterization of an optically pumped 3rd order distributed feedback laser
 Proc. SPIE 2008, 6895, 68950J:1-8 [ | ] 369 H. von Wenckstern, M. Brandt, H. Schmidt, G. Benndorf, J. Zippel, H. Hochmuth,M. Lorenz, M. Grundmann Properties of homoepitaxial ZnO and ZnO:P thin films grown by pulsed-laser deposition
 Proc. SPIE 2008, 6895, 689505:1-11 [ | ] 368 A. Müller, G. Benndorf, S. Heitsch, C. Sturm, M. Grundmann Exciton-phonon coupling and exciton thermalization in MgxZn1-xO thin films
 Sol. St. Comm. 2008, 148(11-12), 570-572 [ | | IF: 1.534 ] 367 Qingyu Xu, Heidemarie Schmidt, Shengqiang Zhou, Kay Potzger, Manfred Helm, Holger Hockmuth, Michael Lorenz, Christoph Meinecke, Marius Grundmann Magnetic and transport properties of Cu1.05Cr0.89Mg0.05O2 and Cu0.96Cr0.95Mg0.05Mn0.04O2 films
 Thin Solid Films 2008, 516(23), 8543-8546 [ | | IF: 1.604 ] 366 Q. Xu, L. Hartmann, H. Schmidt, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, C. Meinecke, M. Grundmann Magnetotransport properties of Zn90Mn7.5Cu2.5O thin films
 Thin Solid Films 2008, 516(6), 1160-1163 [ | | IF: 1.604 ] 365 Marius Grundmann ZnO-nano-wires for miniaturised light sources
BuildMoNa Annual Report 2008 2008, p. 29-31 [ | link ] 364 E.M. Kaidashev, M. Lorenz, J. Lenzner, A. Ramm, T. Nobis, M. Grundmann, N. Zakharov, A.T. Kozakov, S.I. Shevtsova, K.G. Abdulvakhidov, V.E. Kaidashev Structure and optical properties of ZnO nanowires fabricated by pulsed laser deposition on GaN/Si(111) films with the use of Au and NiO catalysts Bull. Russ. Acad. Sci.: Physics 2008, 72(8), 1129-1131 [ | ] 363 Marius Grundmann, Andreas Rahm, Thomas Nobis, Michael Lorenz, Christian Czekalla, Evgeni M. Kaidashev, Jörg Lenzner, Nikos Boukos, Anastasios Travlos Growth and characterization of ZnO nano- and microstuctures
Handbook of Self-Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics 2008, p. 293-323, M. Henini, ed. (Elsevier, Amsterdam, 2008), ISBN 978-0-08-046325-4 [ | | extra ] 362 Report of The Physics Institutes of Universität Leipzig 2007
Universität Leipzig, M. Grundmann, ed. [ | link ] 361 H. Schmidt, M. Wiebe, B. Dittes, M. Grundmann Meyer-Neldel rule in ZnO
 Appl. Phys. Lett. 2007, 91(23), 232110:1-3 [ | | IF: 3.794 ] 360 Daniel Hofstetter, Yargo Bonetti, Fabrizio R. Giorgetta, Abdel-Hamid El-Shaer, Andrey Bakin, Andreas Waag, Rüdiger Schmidt-Grund, Mathias Schubert, Marius Grundmann Demonstration of an ultraviolet ZnO-based optically pumped third order distributed feedback laser
 Appl. Phys. Lett. 2007, 91(11), 111108:1-3 [ | | IF: 3.794 ] 359 Q. Xu, H. Schmidt, L. Hartmann, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, Ch. Meinecke, M. Grundmann Room temperature ferromagnetism in Mn-doped ZnO films mediated by acceptor levels
 Appl. Phys. Lett. 2007, 91(9), 092503:1-3 [ | | IF: 3.794 ] 358 Holger von Wenckstern, Martin Allen, Heidemarie Schmidt, Paul Miller, R. Reeves, Steve Durbin, Marius Grundmann Defects in hydrothermally grown bulk ZnO
 Appl. Phys. Lett. 2007, 91(2), 022913:1-3 [ | | IF: 3.794 ] 357 Y. Liu, Q. Xu, H. Schmidt, L. Hartmann, H. Hochmuth, M. Lorenz, M. Grundmann, X. Han, Z. Zhang Co location and valence state determination in ferromagnetic ZnO:Co thin films by atom-location-by-channeling-enhanced-microanalysis electron energy-loss spectroscopy
 Appl. Phys. Lett. 2007, 90(15), 154101:1-3 [ | | IF: 3.794 ] 356 M. Lorenz, R. Johne, H.P.D. Schenk, S.I. Borenstain, A. Schön, C. Bekeny, T. Voß, J. Gutowski, T. Nobis, H. Hochmuth, J. Lenzner, M. Grundmann Self absorption in the room-temperature cathodoluminescence of ZnO scintillator thin films on sapphire
 Appl. Phys. Lett. 2007, 89(24), 243510:1-3 [ | | IF: 3.794 ] 355 S. Heitsch, G. Benndorf, G. Zimmermann, C. Schulz, D.Spemann, H. Hochmuth, H. Schmidt, Th. Nobis, M. Lorenz, M. Grundmann Optical and structural properties of MgZnO/ZnO hetero- and double heterostructures grown by pulsed laser deposition
 Appl. Phys. A 2007, 88, 99-104 [ | | IF: 1.545 ] 354 R. Johne, M. Lorenz, H. Hochmuth, J. Lenzner, H. von Wenckstern, G. Zimmermann, H. Schmidt, R. Schmidt-Grund, M. Grundmann Cathodoluminescence of large-area PLD grown ZnO thin films measured in transmission and reflection
 Appl. Phys. A 2007, 88, 89-93 [ | | IF: 1.545 ] 353 A. Rahm, M. Lorenz, Th. Nobis, G. Zimmermann, M. Grundmann, B. Fuhrmann, F. Syrowatka Pulsed Laser Deposition and characterization of ZnO nanowires with regular lateral arrangement
 Appl. Phys. A 2007, 88, 31-34 [ | | IF: 1.545 ] 352 H. Schmidt, M. Diaconu, H. Hochmuth, G. Benndorf, H. von Wenckstern, G. Biehne, M. Lorenz, M. Grundmann Electrical and optical spectroscopy on ZnO:Co films
 Appl. Phys. A 2007, 88, 157-160 [ | | IF: 1.545 ] 351 H. von Wenckstern, M. Brandt, H. Schmidt, G. Biehne, R. Pickenhain, H. Hochmuth, M. Lorenz, M. Grundmann Donor like defects in ZnO substrate materials and ZnO thin films
 Appl. Phys. A 2007, 88, 135-139 [ | | IF: 1.545 ] 350 H. von Wenckstern, G. Benndorf, S. Heitsch, J. Sann, M. Brandt, H. Schmidt, J. Lenzner, M. Lorenz, A. Y. Kuznetsov, B.K. Meyer, M. Grundmann Properties of phosphorous doped ZnO
 Appl. Phys. A 2007, 88, 125-128 [ | | IF: 1.545 ] 349 N. Ghosh, H. Schmidt, M. Grundmann Andreev reflections at large ferromagnet/high-TC superconductor area junctions with rough interface
 arxiv: 2007, 0712.2131 [ | link ] 348 Karsten Goede, Michael Bachmann, Wolfhard Janke, Marius Grundmann Specific Adhesion of Peptides on Semiconductor Surfaces in Experiment and Simulation
 arxiv: 2007, 0710.4562 [ | link ] 347 A.O. Ankiewicz, W. Gehlhoff, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, M.C. Carmo, N.A. Sobolev Electron Paramagnetic Resonance Characterization of Mn- and Co-Doped ZnO Nanowires
 Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 2007, 893, 63-64 [ | ] 346 Karsten Goede, Michael Bachmann, Wolfhard Janke, Marius Grundmann Specific adhesion of peptides on semiconductor surfaces in experiment and simulation
 Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 2007, 893, 611-612 [ | link | ] 345 Susanne Heitsch, Gregor Zimmermann, Jörg Lenzner, Holger Hochmuth, Gabriele Benndorf, Michael Lorenz, Marius Grundmann Photoluminescence of MgxZn1-xO/ZnO Quantum Wells Grown by Pulsed Laser Deposition
 Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 2007, 893, 409-410 [ | ] 344 Daniel Fritsch, Heidemarie Schmidt, Marius Grundmann Calculated optical properties of wurtzite GaN and ZnO
 Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 2007, 893, 325-326 [ | ] 343 H. Frenzel, H. von Wenckstern, A. Weber, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann Measurement of deep intrinsic defects in thin ZnO films via mid-infrared photocurrent spectroscopy
 Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 2007, 893, 301-302 [ | ] 342 R. Schmidt-Grund, N. Ashkenov, M.M. Schubert, W. Czakai, D. Faltermeier, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO
 Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 2007, 893, 271-272 [ | ] 341 Chris Sturm, Rüdiger Schmidt-Grund, Ronny Kaden, Holger von Wenckstern, Bernd Rheinländer, Klaus Bente, Marius Grundmann Optical Properties of Cylindrite
 Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 2007, 893, 1483-1484 [ | ] 340 Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Chris Sturm, Daniel Spemann, Marius Grundmann The magnetotransport properties of Co-doped ZnO films
 Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 2007, 893, 1187-1188 [ | ] 339 R. Schmidt-Grund, B. Rheinländer, T. Gühne, H. Hochmuth, V. Gottschalch, A. Rahm, J. Lenzner, M. Grundmann ZnO micro-pillar resonators with coaxial Bragg reflectors
 Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 2007, 893, 1137-1138 [ | ] 338 Thomas Nobis, Andreas Rahm, Michael Lorenz, Marius Grundmann Temperature dependence of the whispering gallery effect in ZnO nanoresonators
 Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 2007, 893, 1057-1058 [ | ] 337 S. Heitsch, Gregor Zimmermann, Daniel Fritsch, Chris Sturm, Rüdiger Schmidt-Grund, Christian Schulz, Holger Hochmuth, Daniel Spemann, Gabriele Benndorf, Bernd Rheinländer, Thomas Nobis, Michael Lorenz, Marius Grundmann Luminescence and surface properties of MgxZn1-xO thin films grown by pulsed laser deposition
 J. Appl. Phys. 2007, 101(8), 083521:1-6 [ | | IF: 2.21 ] 336 Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Chris Sturm, Daniel Spemann, Marius Grundmann Magnetoresistance and anomalous Hall effect in magnetic ZnO films
 J. Appl. Phys. 2007, 101(6), 063918:1-5 [ | | IF: 2.21 ] 335 A.O. Ankiewicz, M.C. Carmo, N.A. Sobolev, W. Gehlhoff, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann Electron paramagnetic resonance in transition metal-doped ZnO nanowires
 J. Appl. Phys. 2007, 101(2), 024324:1-6 [ | | IF: 2.21 ] 334 A. Rahm, E.M. Kaidashev, H. Schmidt, M. Diaconu, A. Pöppl, R. Böttcher, C. Meinecke, T. Butz, M. Lorenz, M. Grundmann Growth and characterization of Mn- and Co-doped ZnO nanowires
 Microchim. Acta 2007, 156, 21-25 [ | | IF: 3.434 ] 333 H. von Wenckstern, M. Brandt, J. Lenzner, G. Zimmermann, H. Hochmuth, M. Lorenz, M. Grundmann Temperature dependent Hall measurements on PLD thin films
 Proc. Mat. Res. Soc. 2007, 957, 23:1-6 [ | ] 332 S. Heitsch, G. Zimmermann, A. Müller, J. Lenzner, H. Hochmuth, G. Benndorf, M. Lorenz, M. Grundmann Interface and Luminescence Properties of Pulsed Laser Deposited MgZnO/ZnO Quantum Wells with Strong Confinement
 Proc. Mat. Res. Soc. 2007, 957, 229:1-6 [ | ] 331 M. Grundmann, A. Rahm, Th. Nobis, H. von Wenckstern, M. Lorenz, C. Czekalla, J. Lenzner Growth and Characterization of Optical and Electrical Properties of ZnO Nano- and Microwires
 Proc. Mat. Res. Soc. 2007, 957, 107:1-6 [ | ] 330 R. Schmidt-Grund, C. Sturm, M. Schubert, B. Rheinländer, D. Faltermeier, H. Hochmuth, A. Rahm, J. Bläsing, C. Bundesmann, J. Zúñiga-Pérez, T. Chavdarov, M. Lorenz, M. Grundmann Valence Band Structure of ZnO and MgxZn1-xO
 Proc. Mat. Res. Soc. 2007, 1035, 163-169 [ | ] 329 Martin Allen, Holger von Wenckstern, Marius Grundmann, Stuart Hatfield, Paul Jefferson, Philip King, Timothy Veal, Chris McConville, Steven Durbin Mechanisms in the Formation of High Quality Schottky Contacts to n-type ZnO
 Proc. Mat. Res. Soc. 2007, 1035, 11-16 [ | ] 328 B.Q. Cao, M. Lorenz, A. Rahm, H. von Wenckstern, C. Czekalla, J. Lenzner, G. Benndorf, M. Grundmann Phosphorous acceptor doped ZnO nanowires prepared by pulsed laser deposition
 Nanotechnology 2007, 18(45), 455707:1-5 [ | | IF: 3.842 ] 327 J. Zúñiga-Pérez, A. Rahm, C. Czekalla, J. Lenzner, M. Lorenz, M. Grundmann Ordered growth of tilted ZnO nanowires: morphological, structural and optical characterization
 Nanotechnology 2007, 18(19), 195303:1-7 [ | | IF: 3.842 ] 326 F. Danie Auret, W.E. Meyer, P.J. Janse van Rensburg, M. Hayes, J.M. Nel, Holger von Wenckstern, H. Schmidt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 meV and 370 meV below the conduction band
 Physica B 2007, 401-402, 378-381 [ | | IF: 1.327 ] 325 Q. Xu, L. Hartmann, H. Schmidt, H. Hochmuth, M. Lorenz, D. Spemann, M. Grundmann s-d exchange interaction induced magnetoresistance in magnetic ZnO
 Phys. Rev. B 2007, 76(13), 134417:1-4 [ | | IF: 3.767 ] 324 H. Frenzel, H. von Wenckstern, A. Weber, H. Schmidt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann Photocurrent spectroscopy of deep levels in ZnO thin films
 Phys. Rev. B 2007, 76(3), 035214:1-6 [ | | IF: 3.767 ] 323 G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, H. von Wenckstern, M. Brandt, M. Lorenz, M. Grundmann Defects in N+ ion-implanted ZnO single crystals studied by positron annihilation and Hall effect
 Phys. Status Solidi C 2007, 4(10), 3642-3645 [ | ] 322 H. von Wenckstern, H. Schmidt, C. Hanisch, M. Brandt, C. Czekalla, G. Benndorf, G. Biehne, A. Rahm, H. Hochmuth, M. Lorenz, M. Grundmann Homoepitaxy of ZnO by Pulsed-Laser Deposition
 Phys. Status Solidi RRL 2007, 1(4), 129-131 [ | | extra | IF: 2.58 ] 321 Thomas Nobis, Andreas Rahm, Christian Czekalla, Michael Lorenz, Marius Grundmann Optical whispering gallery modes in dodecagonal zinc oxide microcrystals
 Superlatt. Microstr. 2007, 42(1-6), 333-336 [ | | IF: 1.564 ] 320 G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, C. Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, M. Grundmann Comparative characterization of differently grown ZnO single crystals by positron annihilation and Hall effect
 Superlatt. Microstr. 2007, 42(1-6), 259-264 [ | | IF: 1.564 ] 319 Mariana Ungureanu, Heidemarie Schmidt, Qingyu Xu, Holger von Wenckstern, Daniel Spemann, Holger Hochmuth, Michael Lorenz, Marius Grundmann Electrical and magnetic properties of RE-doped ZnO thin films (RE = Gd, Nd)
 Superlatt. Microstr. 2007, 42(1-6), 231-235 [ | | IF: 1.564 ] 318 H. von Wenckstern, R. Pickenhain, H. Schmidt, M. Brandt, G. Biehne, M. Lorenz, M. Grundmann, G. Brauer Investigation of acceptor states in ZnO by junction DLTS
 Superlatt. Microstr. 2007, 42(1-6), 14-20 [ | | IF: 1.564 ] 317 R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmut, A. Rahm, M. Lorenz, M. Grundmann ZnO based planar and micropillar resonators
 Superlatt. Microstr. 2007, 41(5-6), 360-363 [ | | IF: 1.564 ] 316 C. Czekalla, J. Lenzner, A. Rahm, T. Nobis, M. Grundmann A Zinc Oxide Microwire Laser
 Superlatt. Microstr. 2007, 41(5-6), 347-351 [ | | IF: 1.564 ] 315 Michael Lorenz, Matthias Brandt, Jürgen Schubert, Holger Hochmuth, Holger von Wenckstern, Mathias Schubert, Marius Grundmann Polarization coupling in epitaxial ZnO/BaTiO3 thin film heterostructures on SrTiO3 (100) substrates
 Proc. SPIE 2007, 6474, 64741S:1-9 [ | ] 314 M. Schmidt, R. Pickenhain, M. Grundmann Exact Solutions for the Capacitance of Space Charge Regions at Semiconductor Interfaces
 Sol. St. Electr. 2007, 51(6), 1002-1004 [ | | IF: 1.482 ] 313 Mariana Ungureanu, Heidemarie Schmidt, Holger von Wenckstern, Holger Hochmuth, Michael Lorenz, Marius Grundmann, Marian Fecioru-Morariu, Gernot Güntherodt A comparison between ZnO films doped with 3d and 4f magnetic ions
 Thin Solid Films 2007, 515(24), 8761-8763 [ | | IF: 1.604 ] 312 M. Grundmann Nanowhiskers and their applications
1st Saxon Biotechnology Symposium 2007, p. 24, ISBN 978-3-86780-044-0 [ ] 311 Report of The Physics Institutes of Universität Leipzig 2006
Universität Leipzig, M. Grundmann, ed. [ | link ] 310 Marius Grundmann The Physics of Semiconductors, An Introduction including Devices and Nanophysics
(Springer, Heidelberg, 2006), ISBN 978-3-540-25370-9 [ | link | ] 309 H. von Wenckstern, R. Pickenhain, H. Schmidt, M. Brandt, G. Biehne, M. Lorenz, M. Grundmann Deep acceptors states in ZnO single crystals
 Appl. Phys. Lett. 2006, 89(9), 092122:1-3 [ | | IF: 3.794 ] 308 D. Fritsch, H. Schmidt, M. Grundmann Pseudopotential band structures of rocksalt MgO, ZnO, and Mg1-xZnxO
 Appl. Phys. Lett. 2006, 88(13), 134104:1-3 [ | | IF: 3.794 ] 307 H. von Wenckstern, G. Biehne, R. Abdel Rahman, H. Hochmuth, M. Lorenz, M. Grundmann Mean barrier height of Pd Schottky contacts on ZnO thin films
 Appl. Phys. Lett. 2006, 88(9), 092102:1-3 [ | | IF: 3.794 ] 306 Rüdiger Schmidt-Grund, Anke Carstens, Bernd Rheinländer, Daniel Spemann, Holger Hochmut, Gregor Zimmermann, Michael Lorenz, Marius Grundmann, Craig M. Herzinger, Mathias Schubert Refractive indices and band-gap properties of rocksalt MgxZn1-xO (0.68≤x≤1)
 J. Appl. Phys. 2006, 99(12), 123701:1-7 [ | | IF: 2.21 ] 305 C. Bundesmann, A. Rahm, M. Lorenz, M. Grundmann, M. Schubert Infrared optical properties of MgxZn1-xO thin films (0≤x≤1): Long-wavelength optical phonons and dielectric constants
 J. Appl. Phys. 2006, 99(11), 113504:1-11 [ | | IF: 2.21 ] 304 J. Zúñiga-Pérez, V. Muñoz-Sanjosé, M. Lorenz, G. Benndorf, S. Heitsch, D. Spemann, M. Grundmann Structural characterization of a-plane Zn1-xCdxO (0≤x≤0.085) thin films grown by metal-organic vapor phase epitaxy
 J. Appl. Phys. 2006, 99(2), 023514:1-6 [ | | IF: 2.21 ] 303 E. Schubert, J. Fahlteich, B. Rauschenbach, M. Schubert, M. Lorenz, M. Grundmann, G. Wagner Recrystallization behavior in chiral sculptured thin films from silicon
 J. Appl. Phys. 2006, 100(1), 016107:1-3 [ | | IF: 2.21 ] 302 Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Daniel Spemann, Marius Grundmann Magnetoresistance effects in Zn0.90Co0.10O films
 J. Appl. Phys. 2006, 100(1), 013904:1-4 [ | | IF: 2.21 ] 301 M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, G. Benndorf, D. Spemann, A. Setzer, P. Esquinazi, A. Pöppl, H. von Wenckstern, K.-W. Nielsen, R. Gross, H. Schmid, W. Mader, G. Wagner, M. Grundmann Room-temperature ferromagnetic Mn-alloyed ZnO films obtained by pulsed laser deposition
 J. Magn. Magn. Mat. 2006, 307(2), 212-221 [ | | IF: 1.826 ] 300 L. Hartmann, Q. Xu, H. Schmidt, H. Hochmuth, M. Lorenz, Ch. Sturm, Ch. Meinecke, M. Grundmann Spin polarization in Zn0.95Co0.05O:(Al,Cu) thin films
 J. Phys. D: Appl. Phys. 2006, 39(23), 4920-4924 [ | | IF: 2.772 ] 299 Karsten Goede, Marius Grundmann, Kai Holland-Nell, Annette Beck-Sickinger Cluster properties of peptides on (100) semiconductor surfaces
 Langmuir 2006, 22(19), 8104-8108 [ | | IF: 4.187 ] 298 C. Bundesmann, M. Lorenz, M. Grundmann, M. Schubert Phonon modes, dielectric constants, and exciton mass parameters in ternary MgxZn1-xO
 Proc. Mat. Res. Soc. 2006, 928E, GG05-03:1-5 [ | ] 297 S. Jaensch, H. Schmidt, M. Grundmann Quantitative scanning capacitance microscopy
 Physica B 2006, 376-377, 913-915 [ | | IF: 1.327 ] 296 M. Diaconu, H. Schmidt, M. Fecioru-Morariu, G. Güntherodt, H. Hochmuth, M. Lorenz, M. Grundmann Ferromagnetic behavior in Zn(Mn,P)O thin films
 Phys. Lett. A 2006, 351(4-5), 323-326 [ | | IF: 1.766 ] 295 Marcus Gonschorek, Heidemarie Schmidt, Jens Bauer, Gabriele Benndorf, Gerald Wagner, Georgii E. Cirlin, Marius Grundmann Thermally assisted tunneling processes in InGaAs/GaAs quantum dot structures
 Phys. Rev. B 2006, 74(11), 115312:1-13 [ | | IF: 3.767 ] 294 G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, C. Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, M. Grundmann Defects in virgin and N+-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy
 Phys. Rev. B 2006, 74(4), 045208:1-10 [ | | IF: 3.767 ] 293 Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Chris Sturm, Daniel Spemann, Marius Grundmann Metal-insulator transition in Co-doped ZnO: Magnetotransport properties
 Phys. Rev. B 2006, 73(20), 205342:1-5 [ | | IF: 3.767 ] 292 G. Brauer, W. Anwand, W. Skorupa, H. Schmidt, M. Diaconu, M. Lorenz, M. Grundmann Structure and ferromagnetism of Mn+ ion-implanted ZnO thin films on sapphire
 Superlatt. Microstr. 2006, 39(1-4), 41-49 [ | | IF: 1.564 ] 291 H. Schmidt, M. Diaconu, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, A. Pöppl, D. Spemann, K.W. Nielsen, R. Gross, G. Wagner, M. Grundmann Weak ferromagnetism in textured Zn1-xTMxO thin films
 Superlatt. Microstr. 2006, 39(1-4), 334-339 [ | | IF: 1.564 ] 290 M. Diaconu, H. Schmidt, A. Pöppl, R. Böttcher, J. Hoentsch, A. Rahm, H. Hochmuth, M. Lorenz, M. Grundmann EPR study on magnetic Zn1-xMnxO
 Superlatt. Microstr. 2006, 38(4-6), 413-420 [ | | IF: 1.564 ] 289 T. Nobis, A. Rahm, M. Lorenz, M. Grundmann Numerical Modeling of Zinc Oxide Nanocavities to Determine Their Birefringence
 Proc. SPIE 2006, 6122, 61220V:1-6 [ | ] 288 R. Schmidt-Grund, T. Gühne, H. Hochmuth, B. Rheinländer, A. Rahm, V. Gottschalch, J. Lenzner, M. Grundmann Cylindrical resonators with coaxial Bragg reflectors
 Proc. SPIE 2006, 6038, 489-498 [ | ] 287 M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, H. von Wenckstern, G. Biehne, D. Spemann, M. Grundmann Deep defects generated in n-conducting ZnO:TM thin films
 Sol. St. Comm. 2006, 137(8), 417-421 [ | | IF: 1.534 ] 286 Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Daniel Spemann, Andreas Rahm, Marius Grundmann Magnetoresistance in pulsed laser deposited 3d transition metal doped ZnO films
 Thin Solid Films 2006, 515(4), 2549-2554 [ | | IF: 1.604 ] 285 S. Heitsch, C. Bundesmann, G. Wagner, G. Zimmermann, A. Rahm, H. Hochmuth, G. Benndorf, H. Schmidt, M. Schubert, M. Lorenz, M. Grundmann Low temperature photoluminescence and infrared dielectric functions of pulsed laser deposited ZnO thin films on silicon
 Thin Solid Films 2006, 496(2), 234-239 [ | | IF: 1.604 ] 284 C. Klingshirn, M. Grundmann, A. Hoffmann, B. Meyer, A. Waag Zinkoxid - Ein alter, neuer Halbleiter
Physik-Journal 2006, 5(1), 33-38 [ | link ] 283 Report of The Physics Institutes of Universität Leipzig 2005
Universität Leipzig, M. Grundmann, ed. [ | link ] 282 M. Lorenz, E.M. Kaidashev, A. Rahm, Th. Nobis, J. Lenzner, G. Wagner, D. Spemann, H. Hochmuth, M. Grundmann MgxZn1-xO (0≤x<0.2) nanowire arrays on sapphire grown by high-pressure pulsed-laser deposition
 Appl. Phys. Lett. 2005, 86(14), 143113:1-3 [ | | IF: 3.794 ] 281 B.N. Mbenkum, N. Ashkenov, M. Schubert, M. Lorenz, H. Hochmuth, D. Michel, M. Grundmann, G. Wagner Temperature-dependent dielectric and electro-optic properties of a ZnO-BaTiO3-ZnO heterostructure grown by pulsed-laser deposition
 Appl. Phys. Lett. 2005, 86(9), 091904:1-3 [ | | IF: 3.794 ] 280 Holger von Wenckstern, Swen Weinhold, Gisela Biehne, Rainer Pickenhain, Heidemarie Schmidt, Holger Hochmuth, Marius Grundmann Donor levels in ZnO
 Adv. Sol. St. Phys. 2005, 45, 263-274 [ | ] 279 Andreas Rahm, Thomas Nobis, Evgeni M. Kaidashev, Michael Lorenz, Gerald Wagner, Jörg Lenzner, Marius Grundmann High-pressure Pulsed Laser Deposition and Structural Characterization of Zinc Oxide Nanowires
 Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 2005, 772, 875-876 [ | ] 278 Thomas Nobis, Evgeni M. Kaidashev, Andreas Rahm, Michael Lorenz, Jörg Lenzner, Marius Grundmann Optical Resonances Of Single Zinc Oxide Microcrystals
 Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 2005, 772, 849-850 [ | ] 277 H. Schmidt, M. Diaconu, E. Guzman, H. Hochmuth, M. Lorenz , G. Benndorf, A. Setzer, P. Esquinazi, H. von Wenckstern, D. Spemann, A. Pöppl, R. Böttcher, M. Grundmann N-conducting, ferromagnetic Mn-doped ZnO thin films on sapphire substrates
 Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 2005, 772, 351-352 [ | ] 276 R. Schmidt-Grund, D. Fritsch, M. Schubert, B. Rheinländer, H. Schmidt, H. Hochmuth, M. Lorenz, C.M. Herzinger, M. Grundmann Band-to-band transitions and optical properties of MgxZn1-xO films
 Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 2005, 772, 201-202 [ | ] 275 H. von Wenckstern, S. Weinhold, G. Biehne, R. Pickenhain, E.M. Kaidashev, M. Lorenz, M. Grundmann Static and transient capacitance spectroscopy on ZnO
 Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 2005, 772, 197-198 [ | ] 274 H. von Wenckstern, S. Heitsch, G. Benndorf, D. Spemann, E.M. Kaidashev, M. Lorenz, M. Grundmann Incorporation and electrical activity of group V acceptors in ZnO thin films
 Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 2005, 772, 183-184 [ | ] 273 C. Bundesmann, M. Schubert, N. Ashkenov, M. Grundmann, G. Lippold, J. Piltz Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe2-based photoabsorber layers on polyimide substrates
 Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 2005, 772, 165-166 [ | ] 272 Holger von Wenckstern, Rainer Pickenhain, Swen Weinhold, Michael Ziese, Pablo Esquinazi, Marius Grundmann Electrical properties of Ni/GaAs and Au/GaAs Schottky contacts in high magnetic fields
 Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 2005, 772, 1333-1334 [ | ] 271 T. Nobis, M. Grundmann Low order whispering gallery modes in hexagonal nanocavities
 Phys. Rev. A 2005, 72(6), 063806:1-11 [ | | IF: 3.042 ] 270 M. Diaconu, H. Schmidt, A. Pöppl, R. Böttcher, J. Hoentsch, A. Klunker, D. Spemann, H. Hochmuth, M. Lorenz, M. Grundmann Electron paramagnetic resonance of Zn1-xMnxO thin films and single crystals
 Phys. Rev. B 2005, 72(8), 085214:1-6 [ | | IF: 3.767 ] 269 M. Grundmann, H. von Wenckstern, R. Pickenhain, Th. Nobis, A. Rahm, M. Lorenz Electrical Properties of ZnO Thin Films and Optical Properties of ZnO-based Nanostructures
 Superlatt. Microstr. 2005, 38(4-6), 317-328 [ | | IF: 1.564 ] 268 M. Grundmann The bias dependence of the non-radiative recombination current in p-n diodes
 Sol. St. Electr. 2005, 49, 1446-1448 [ | | IF: 1.482 ] 267 M. Lorenz, H. Hochmuth, J. Lenzner, T. Nobis, G. Zimmermann, M. Diaconu, H. Schmidt, H. von Wenckstern, M. Grundmann Room-temperature luminescence of n-type ZnO thin films grown by pulsed laser deposition in N2, N2O, and O2
 Thin Solid Films 2005, 486(1-2), 205-209 [ | | IF: 1.604 ] 266 A. Rahm, G.W. Yang, M. Lorenz, T. Nobis, J. Lenzner, G. Wagner, M. Grundmann Two-dimensional ZnO:Al nanosheets and nanowalls obtained by Al2O3-assisted thermal evaporation
 Thin Solid Films 2005, 486(1-2), 191-194 [ | | IF: 1.604 ] 265 N. Ashkenov, M. Schubert, E. Twerdowski, B.N. Mbenkum, H. Hochmut, M. Lorenz, H. von Wenckstern, W. Grill, M. Grundmann Rectifying ferroelectric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures
 Thin Solid Films 2005, 486(1-2), 153-157 [ | | IF: 1.604 ] 264 M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, G. Benndorf, J. Lenzner, D. Spemann, A. Setzer, K.-W. Nielsen, P. Esquinazi, M. Grundmann UV optical properties of ferromagnetic Mn-doped ZnO thin films grown by PLD
 Thin Solid Films 2005, 486(1-2), 117-121 [ | | IF: 1.604 ] 263 R. Schmidt-Grund, T. Nobis, V. Gottschalch, B. Rheinländer, H. Herrnberger, M. Grundmann a-Si/SiOx Bragg-reflectors on micro-structured InP
 Thin Solid Films 2005, 483(1-2), 257-260 [ | | IF: 1.604 ] 262 Karsten Goede, Michael Bachmann, Wolfhard Janke, Marius Grundmann Binding specificity of peptides on semiconductor surfaces 4th Biotechnology Symposium 2005 - Abstracts 2005, p. 192, A.A. Robitzki, A.G. Beck-Sickinger, S. Brakmann, S. Eichler, eds. (Universit, Leipzig, 2005) 261 K. Goede, M. Grundmann, K. Holland-Nell, A.G. Beck-Sickinger, M. Bachmann, W. Janke Peptide auf neuen Wegen BIOforum 2005, 10, 53-55 [ ] 260 M. Grundmann Quantenfäden, Quantenpunkte
Effekte der Physik und ihre Anwendungen (3. Auflage) 2005, p. 478-483, M. von Ardenne, G. Musiol, S. Reball, eds. (Harri Deutsch, Frankfurt/M, 2005), ISBN 3-8171-1682-9 [ | link ] 259 M. Grundmann Quantum devices of reduced dimensionality
Encyclopedia of Condensed Matter Physics 2005, p. 17-22, F. Bassani, J. Liedl, P. Wyder, eds. (Elsevier, Kidlington, 2005), ISBN 978-0-12-369401-0 [ | | extra ] 258 Th. Nobis, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann Whispering Gallery Modes in Hexagonal Zinc Oxide Micro- and Nanocrystals
NATO Science Series II: Mathematics, Physics and Chemistry 2005, 194, 83-98, N.H. Nickel, E. Terukov, eds. (Kluwer, Dordrecht, 2005), ISBN 1-4020-3474-1 [ | ] 257 M. Grundmann, H. von Wenckstern, R. Pickenhain, S. Weinhold, B. Chengnui, O. Breitenstein Electrical properties of ZnO thin films and single crystals
NATO Science Series II: Mathematics, Physics and Chemistry 2005, 194, 47-57, N.H. Nickel, E. Terukov, eds. (Kluwer, Dordrecht, 2005), ISBN 1-4020-3474-1 [ | ] 256 D. Fritsch, R. Schmidt-Grund, H. Schmidt, C.M. Herzinger, M. Grundmann Polarization-dependent optical transitions at the fundamental band gap and higher critical points of wurtzite ZnO Proc. 5th Int.Conf. Numerical Simulation of Optoelectronic Devices (NUSOD '05) 2005, p. 69-70 [ | ] 255 Report of The Physics Institutes of Universität Leipzig 2004
Universität Leipzig, M. Grundmann, ed. [ | link ] 254 S. Jaensch, H. Schmidt, M. Grundmann Quantitative scanning capacitance microscopy for controlling electrical properties below the 25 nm scale VDI-Berichte 2005, 2005(Januar), 221-224 253 M. Lorenz, H. Hochmuth, A. Jammoul, G. Ferro, Ch. Förster, J. Pezoldt, J. Zúñiga-Pérez, G. Benndorf, J. Lenzner, R. Schmidt-Grund, M. Grundmann Luminescence of ZnO thin films grown by pulsed laser deposition on 3C-SiC buffered Si Wissenschaftlich Technische Berichte des Forschungszentrums Rossendorf FZR 2005, 433, 74-82 [ ] 252 M. Lorenz, H. Hochmuth, J. Lenzner, M. Brandt, H. von Wenckstern, G. Benndorf, M. Grundmann ZnO thin films grown by pulsed laser deposition on 6H-SiC single crystals Wissenschaftlich Technische Berichte des Forschungszentrums Rossendorf FZR 2005, 433, 57-62 [ ] 251 M. Schubert, N. Ashkenov, T. Hofmann, M. Lorenz, H. Hochmuth, H. von Wenckstern, M. Grundmann, G. Wagner Electro-optical properties of ZnO-BaTiO3-ZnO heterostructures grown by pulsed laser deposition
 Ann. Phys. 2004, 13(1-2), 61-62 [ | | IF: 1.51 ] 250 M. Lorenz, H. Hochmuth, R. Schmidt-Grund, E.M. Kaidashev, M. Grundmann Advances of pulsed laser deposition of ZnO thin films
 Ann. Phys. 2004, 13(1-2), 59-60 [ | | IF: 1.51 ] 249 E. Guzman, H. Hochmuth, M. Lorenz, H. von Wenckstern, A. Rahm, E.M. Kaidashev, M. Ziese, A. Setzer, P. Esquinazi, A. Pöppl, D. Spemann, R. Pickenhain, H. Schmidt, M. Grundmann Pulsed laser deposition of Fe- and Fe, Cu-doped ZnO thin films
 Ann. Phys. 2004, 13(1-2), 57-58 [ | | IF: 1.51 ] 248 M. Lorenz, J. Lenzner, E.M. Kaidashev, H. Hochmuth, M. Grundmann Cathodoluminescence of selected single ZnO nanowires on sapphire
 Ann. Phys. 2004, 13(1-2), 39-40 [ | | IF: 1.51 ] 247 C. Bundesmann, M. Schubert, D. Spemann, A. Rahm, H. Hochmuth, M. Lorenz, M. Grundmann Infrared dielectric function and phonon modes of Mg-rich cubic MgxZn1-xO (x > 0.67) thin films on sapphire (0001)
 Appl. Phys. Lett. 2004, 85(6), 905-907 [ | | IF: 3.794 ] 246 H. von Wenckstern, E.M. Kaidashev, M. Lorenz, H. Hochmuth, G. Biehne, J. Lenzner, V. Gottschalch, R. Pickenhain, M. Grundmann Lateral homogeneity of Schottky contacts on n-type ZnO
 Appl. Phys. Lett. 2004, 84(1), 79-81 [ | | IF: 3.794 ] 245 Thomas Nobis, Evgeni M. Kaidashev, Andreas Rahm, Michael Lorenz, Jörg Lenzner, Marius Grundmann Spatially inhomogeneous impurity distribution in ZnO micropillars
 Nano Lett. 2004, 4(5), 797-800 [ | | IF: 13.025 ] 244 Karsten Goede, Peter Busch, Marius Grundmann Binding specificity of a peptide on semiconductor surfaces
 Nano Lett. 2004, 4(11), 2115-2120 [ | | IF: 13.025 ] 243 D. Fritsch, H. Schmidt, M. Grundmann Band dispersion relations of zinc-blende and wurtzite InN
 Phys. Rev. B 2004, 69(16), 165204:1-5 [ | | IF: 3.767 ] 242 Thomas Nobis, Evgeni M. Kaidashev, Andreas Rahm, Michael Lorenz, Marius Grundmann Whispering gallery modes in nano-sized dielectric resonators with hexagonal cross section
 Phys. Rev. Lett. 2004, 93(10), 103903:1-4 [ | | extra | IF: 7.645 ] 241 R. Schmidt-Grund, M. Schubert, B. Rheinländer, D. Fritsch, H. Schmidt, E.M. Kaidashev, M. Lorenz, H. Hochmuth, M. Grundmann UV-VUV Spectroscopic ellipsometry of ternary MgxZn1-xO (0 ≤ x ≤ 0.53) thin films
 Thin Solid Films 2004, 455-456, 500-504 [ | | IF: 1.604 ] 240 C. Bundesmann, N. Ashkenov, M. Schubert, A. Rahm, E. M. Kaidashev, M. Lorenz, M. Grundmann Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry
 Thin Solid Films 2004, 455-456, 161-166 [ | | IF: 1.604 ] 239 Report of The Physics Institutes of Universität Leipzig 2003
Universität Leipzig, M. Grundmann, ed. [ | link ] 238 M. Grundmann Nanoscroll formation from strained layer heterostructures
 Appl. Phys. Lett. 2003, 83(12), 2444-2446 [ | | IF: 3.794 ] 237 C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, E.M. Kaidashev, M. Lorenz, M. Grundmann Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga and Li
 Appl. Phys. Lett. 2003, 83(10), 1974-1976 [ | | IF: 3.794 ] 236 E. M. Kaidashev, M. Lorenz, H. von Wenckstern, J. Lenzner, G. Benndorf, A. Rahm, H.-C. Semmelhack, K.-H. Han, H. Hochmuth, C. Bundesmann, V. Riede, M. Grundmann High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition
 Appl. Phys. Lett. 2003, 82(22), 3901-3903 [ | | IF: 3.794 ] 235 R. Schmidt, B. Rheinländer, M. Schubert, D. Spemann, T. Butz, J. Lenzner, E.M. Kaidashev, M. Lorenz, M. Grundmann Dielectric functions (1 to 5 eV) of wurtzite MgxZn1-xO (0 ≤ x < 0.29) thin films
 Appl. Phys. Lett. 2003, 82(14), 2260-2262 [ | | IF: 3.794 ] 234 L.E. Vorobjev, S.N. Danilov, V.Yu. Panevin, N.K. Fedosov, D.A. Firsov, V.A. Shalygin, A.D. Andreev, N.N. Ledentsov, V.M. Ustinov, G.E. Cirlin, V.A. Egorov, A. Tonkikh, F.Fossard, A.Helman, Kh.Moumanis, F.H.Julien, A. Weber, M. Grundmann Interband and intraband light absorption in InAs/GaAs quantum dots covered by InGaAs quantum wells
 Proc. 26th Int. Conf. on the Physics of Semiconductors (ICPS-26), (Edinburgh, UK, 2002), IoP Conf. Ser. 2003, 171, P228:1-7, J.H. Davies, A.R. Long, eds. (IoP Publishing, Bristol), ISBN 978-0-7503-0924-0 [ ] 233 R. Schmidt, C. Bundesmann, N. Ashkenov, B. Rheinländer, M. Schubert, M. Lorenz, E. M. Kaidashev, D. Spemann, T. Butz, J. Lenzner, M. Grundmann Optical properties of ternary MgZnO thin films
 Proc. 26th Int. Conf. on the Physics of Semiconductors (ICPS-26), (Edinburgh, UK, 2002), IoP Conf. Ser. 2003, 171, P11:1-8, J.H. Davies, A.R. Long, eds. (IoP Publishing, Bristol), ISBN 978-0-7503-0924-0 [ ] 232 H. von Wenckstern, H. Schmidt, R. Pickenhain, M. Grundmann Conduction band offset of pseudomorphic InAs/GaAs determined by capacitance spectroscopy
 Proc. 26th Int. Conf. on the Physics of Semiconductors (ICPS-26), (Edinburgh, UK, 2002), IoP Conf. Ser. 2003, 171, H2:1-7, J.H. Davies, A.R. Long, eds. (IoP Publishing, Bristol), ISBN 978-0-7503-0924-0 [ ] 231 N. Ashkenov, G. Wagner, H. Neumann, B. N. Mbenkum, C. Bundesmann, V. Riede, M. Lorenz, E. M. Kaidashev, A. Kasic, M. Schubert, M. Grundmann Infrared dielectric functions and phonon modes of high-quality ZnO films
 J. Appl. Phys. 2003, 93(1), 126-133 [ | | IF: 2.21 ] 230 Daniel Fritsch, Heidemarie Schmidt, Marius Grundmann Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN
 Phys. Rev. B 2003, 67(23), 235205:1-13 [ | | IF: 3.767 ] 229 M. Lorenz, E. M. Kaidashev, H. von Wenckstern, V. Riede, C. Bundesmann, D. Spemann, G. Benndorf, H. Hochmuth, A. Rahm, H.-C. Semmelhack, M. Grundmann Optical and electrical properties of epitaxial (Mg,Cd)xZn1-xO, ZnO, and ZnO:(Ga,Al) thin films on c-plane sapphire grown by pulsed laser deposition
 Sol. St. Electr. 2003, 47(12), 2205-2209 [ | | IF: 1.482 ] 228 M. Lorenz, H. Hochmuth, M. Schallner, R. Heidinger, D. Spemann, M. Grundmann Dielectric properties of Fe-doped BaxSr1-xTiO3 thin films on polycrystalline substrates at temperatures between -35 and +85°C
 Sol. St. Electr. 2003, 47(12), 2199-2203 [ | | IF: 1.482 ] 227 M. Lorenz, H. Hochmuth, M. Grundmann, E. Gaganidze, J. Halbritter Microwave properties of epitaxial large-area Ca-doped YBa2Cu3O7-δ thin films on r-plane sapphire
 Sol. St. Electr. 2003, 47(12), 2183-2186 [ | | IF: 1.482 ] 226 Report of The Physics Institutes of Universität Leipzig 2002
Universität Leipzig, M. Grundmann, ed. [ | link ] 225 M. Grundmann, R. Heitz, D. Bimberg Comment on "Problems in recent analysis of injected carrier dynamics in semiconductor quantum dots" [Appl. Phys. Lett. 79, 3912 (2001)]
 Appl. Phys. Lett. 2002, 81(3), 565 (1 page) [ | | IF: 3.794 ] 224 C. Bundesmann, M. Schubert, D. Spemann, T. Butz, M. Lorenz, E. M. Kaidashev, M. Grundmann, N. Ashkenov, H. Neumann, G. Wagner Infrared dielectric functions and phonon modes of wurtzite MgxZn1-xO (x≤0.2)
 Appl. Phys. Lett. 2002, 81(13), 2376-2378 [ | | IF: 3.794 ] 223 M. Grundmann, N.N. Ledentsov, F. Hopfer, F. Heinrichsdorff, F. Guffarth, D. Bimberg, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Yu.G. Musikhin, Zh.I. Alferov, J.A. Lott, N.D. Zhakarov, P. Werner Long Wavelength Quantum Dot Lasers
 J. Mat. Sci: Mat. Electr. 2002, 13, 643-647 [ | | IF: 1.486 ] 222 T. Hofmann, M. Grundmann, C.M. Herzinger, M. Schubert, W. Grill Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures
 Proc. Mat. Res. Soc. 2002, 744, 277-282 [ | ] 221 M. Lorenz, H. Hochmuth, D. Natusch, M. Grundmann High-quality reproducible PLD Y-Ba-Cu-O: Ag thin films up to 4 inch diameter for microwave applications
 Physica C 2002, 372, 587-589 [ | | IF: 0.718 ] 220 L.E. Vorobjev, S.N. Danilov, A.V. Gluhovskoy, V.L. Zerova, E.A. Zibik, V.Y. Panevin, D.A. Firsov, V.A. Shalygin, A.D. Andreev, B.V. Volovik, A.E. Zhukov, N.N. Ledentsov, D.A. Livshits, V.M. Ustinov, Y.M. Shernyakov, A.F. Tsatsulnikov, A. Weber, M. Grundmann, S.R. Schmidt, A. Seilmeier, E. Towe, D. Pal Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells Izvestiya Akademii Nauk Seriya Fizicheskaya 2002, 66(2), 231-235 [ ] 219 L.E. Vorobjev, A.V. Glukhovskoy, S.N. Danilov, V.Yu. Panevin, D.A. Firsov, N.K. Fedosov, V.A. Shalygin, A.D. Andreev, B.V. Volovik, N.N. Ledentsov, D.A. Livshits, V.M. Ustinov, A.F. Tsatsulnikov, Yu.M. Shernyakov, M. Grundmann, A. Weber, F. Fossard, F.H. Julien Nonequilibrium spectroscopy of inter- and intraband transitions in quantum dot structures Mat. Sci. Forum 2002, 384-385, 39-42, S. Asmontas, A. Dargys, H.G. Roskos, eds. [ | ] 218 E. Towe, D. Pal, L.E. Vorobjev, A.V. Glukhovskoy, S.N. Danilov, V.L. Zerova, V.Y. Panevin, D.A. Firsov, V.A. Shalygin, G.G. Zegrya, A. Weber, M. Grundmann Injection lasers based on intraband carrier transitions Mat. Sci. Forum 2002, 384-385, 209-212, S. Asmontas, A. Dargys, H.G. Roskos, eds. [ | ] 217 M. Grundmann Theory of Quantum Dot Lasers Nano-Optoelectronics, Concepts, Physics and Devices 2002, p. 299-316, M. Grundmann, ed. (Springer, Berlin, 2002), ISBN 978-3-642-56149-8 [ | ] 216 M. Grundmann, ed.
Nano-Optoelectronics, Concepts, Physics and Devices (Springer, Berlin, 2002), ISBN 978-3-642-56149-8 [ | | extra ] 215 Report of The Institute for Experimental Physics II of Universität Leipzig 2001
Universität Leipzig, M. Grundmann, ed. [ | link ] 214 D. Bimberg, M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, Ch. Ribbat, R. Sellin, Zh.I. Alferov, P.S. Kop'ev, M.V. Maximov, V.M. Ustinov, A.E. Zhukov, J.A. Lott Quantum dot lasers: Theory and experiment
 AIP Conf. Proc. 2001, 560(1), 178-197 (AIP Publishing LLC, New York) [ | ] 213 R. Sellin, Ch. Ribbat, M. Grundmann, N.N. Ledentsov, D. Bimberg Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
 Appl. Phys. Lett. 2001, 78(9), 1207-1209 [ | | IF: 3.794 ] 212 A. Weber, M. Grundmann, N.N. Ledentsov Comment on "Room-Temperature Long-Wavelength (λ=13.3 μm) unipolar quantum dot intersubband laser
 Electr. Lett. 2001, 37(2), 96-97 [ | | IF: 1.038 ] 211 Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg, N.A. Sobolev, M.C. Carmo Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation
 Electr. Lett. 2001, 37(3), 174-175 [ | | IF: 1.038 ] 210 O. Stier, A. Schliwa, R. Heitz, M. Grundmann, D. Bimberg Biexciton binding energy in InAs/GaAs quantum dots
 Proc. 25th Int. Conf. on The Physics of Semiconductors (ICPS-25), (Osaka, Japan, 2000), Springer Proc. Physics 2001, 87(II), 1265:1-2 (Springer, Berlin), N. Miura, T. Ando, eds., ISBN 978-3-540-41778-1 [ ] 209 A. Weber, K. Goede, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov Electrically and optically pumped mid-infrared emission from quantum dots
 Proc. 25th Int. Conf. on The Physics of Semiconductors (ICPS-25), (Osaka, Japan, 2000), Springer Proc. Physics 2001, 87(II), 1157:1-2 (Springer, Berlin), N. Miura, T. Ando, eds., ISBN 978-3-540-41778-1 [ ] 208 L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, D. Bimberg Effect of excited-state transitions on the threshold characteristics of a quantum dot laser
 IEEE J. Quantum Electron. 2001, 37(3), 418-425 [ | | IF: 1.83 ] 207 L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, D. Bimberg Maximum modal gain of a self-assembled InAs/GaAs quantum dot laser
 J. Appl. Phys. 2001, 90(3), 1666-1668 [ | | IF: 2.21 ] 206 L.E. Vorobjev, S.N. Danilov, A.V. Glukhovskoy, V.L. Zerova, E.A. Zibik, V.Yu. Panevin, D.A. Firsov, V.A. Shalygin, A.D. Andreev, B.V. Volovik, A.E. Zhukov, N.N. Ledentsov, D.A. Livshits, V.M. Ustinov, Yu.M. Shernyakov, A.F. Tsatsulnikov, A. Weber, M. Grundmann, S.R. Schmidt, A. Seilmeier, E. Towe, D. Pal Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells
 Nanotechnology 2001, 12(4), 462-465 [ | | IF: 3.842 ] 205 V.A. Shalygin, L.E. Vorobjev, A.V. Glukhovskoy, S.N. Danilov, V.Yu. Panevin, D.A. Firsov, B.V. Volovik, N.N. Ledentsov, D.A. Livshits, V.M. Ustinov, Yu.M. Shernyakov, A.F. Tsatsulnikov, A. Weber, M. Grundmann Near and mid infrared spectroscopy of InGaAs/GaAs quantum dot structures
 Nanotechnology 2001, 12(4), 447-449 [ | | IF: 3.842 ] 204 K. Goede, A. Weber, F. Guffarth, C.M.A. Kapteyn, F. Heinrichsdorff, R. Heitz, D. Bimberg, M. Grundmann Calorimetric investigation of intersublevel transitions in charged quantum dots
 Phys. Rev. B 2001, 64(24), 245317:1-7 [ | | IF: 3.767 ] 203 N.A. Sobolev, A. Cavaco, M.C. Carmo, M. Grundmann, F. Heinrichsdorff, D. Bimberg Enhanced radiation hardness of InAs/GaAs quantum dot structures
 Phys. Status Solidi B 2001, 224(1), 93-96 [ | | IF: 1.522 ] 202 A. Weber, K. Goede, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots
 Phys. Status Solidi B 2001, 224(3), 833-837 [ | | IF: 1.522 ] 201 S. Bognár, M. Grundmann, D. Ouyang, R. Heitz, R. Sellin, D. Bimberg Large gain in InAs/GaAs quantum dots
 Phys. Status Solidi B 2001, 224(3), 823-826 [ | | IF: 1.522 ] 200 Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg High power quantum dot lasers at 1160 nm
 Phys. Status Solidi B 2001, 224(3), 819-822 [ | | IF: 1.522 ] 199 D. Bimberg, M. Grundmann, N.N. Ledentsov, M.H. Mao, Ch. Ribbat, R. Sellin, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, J.A. Lott Novel infrared quantum dot lasers: Theory and reality
 Phys. Status Solidi B 2001, 224(3), 787-796 [ | | IF: 1.522 ] 198 A. Schliwa, O. Stier, R. Heitz, M. Grundmann, D. Bimberg Exciton level crossing in coupled InAs/GaAs quantum dot pairs
 Phys. Status Solidi B 2001, 224(2), 405-408 [ | | IF: 1.522 ] 197 O. Stier, A. Schliwa, R. Heitz, M. Grundmann, D. Bimberg Stability of biexcitons in pyramidal InAs/GaAs quantum dots
 Phys. Status Solidi B 2001, 224(1), 115-118 [ | | IF: 1.522 ] 196 M. Grundmann, A. Weber, K. Goede, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov Mid-infrared properties of quantum dot lasers
 Proc. SPIE 2001, 4598, 44-57 [ | ] 195 M. Grundmann, D. Bimberg Nanotechnologische Entwicklungen - Konvergenz mit den IuK Technologien Jahrbuch Telekommunikation und Gesellschaft 2001 "Internet@Future: Technik, Anwendungen und Dienste der Zukunft" 2001, 9, 68 (H, Heidelberg, 2001) [ ] 194 M. Grundmann Feasibility of 5 Gbit/s wavelength division multiplexing using quantum dot lasers
 Appl. Phys. Lett. 2000, 77(26), 4265-4267 [ | | IF: 3.794 ] 193 M. Grundmann, A. Weber, K. Goede, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov Mid-infrared emission from near-infrared quantum-dot lasers
 Appl. Phys. Lett. 2000, 77(1), 4-6 [ | | IF: 3.794 ] 192 M. Grundmann How a quantum dot laser turns on
 Appl. Phys. Lett. 2000, 77(10), 1428-1430 [ | | IF: 3.794 ] 191 F. Heinrichsdorff, Ch. Ribbat, M. Grundmann, D. Bimberg High power quantum dot lasers at 1100 nm
 Appl. Phys. Lett. 2000, 76(5), 556-558 [ | | IF: 3.794 ] 190 M. Grundmann, N.N. Ledentsov, F. Hopfer, F. Heinrichsdorff, F. Guffarth, D. Bimberg, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Yu.G. Musikhin, Zh.I. Alferov, J.A. Lott, N.D. Zhakharov, P. Werner Quantum dots for GaAs-based surface emitting lasers at 1300 nm
 Adv. Sol. St. Phys. 2000, 40, 589-597, B. Kramer, ed. [ | ] 189 P. Werner, K. Scheerschmidt, N.D. Zacharov, R. Hillebrand, M. Grundmann, R. Schneider Quantum Dot Structures in the InGaAs System Investigated by TEM Techniques Cryst. Res. Technol. 2000, 35(6-7), 759-768 [ | | IF: 1.12 ] 188 M. Grundmann Relaxation oscillations of quantum dot lasers
 Electr. Lett. 2000, 36, 1851-1852 [ | | IF: 1.038 ] 187 N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, M.V. Maximov, Zh.I. Alferov, J.A. Lott Quantum-dot heterostructure lasers
 IEEE J. Sel. Top. Quantum Electr. 2000, 6(3), 439-451 [ | | IF: 4.078 ] 186 R. Sellin, F. Heinrichsdorff, C. Ribbat, M. Grundmann, U.W. Pohl, D. Bimberg Surface flattening during MOCVD of thin GaAs layers covering InGaAs quantum dots
 J. Cryst. Growth 2000, 221(1-4), 581-585 [ | | IF: 1.552 ] 185 M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, C. Ribbat, D. Bimberg, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Y.M. Shernyakov, D.A. Lifshits, V.M. Ustinov, Zh.I. Alferov Progress in quantum dot lasers: 1100 nm, 1300 nm and high power applications
 Jpn. J. Appl. Phys. 2000, 39(4B), 2341-2343 [ | | IF: 1.067 ] 184 R. Heitz, F. Guffarth, I. Mukhametzhanov, M. Grundmann, A. Madhukar, D. Bimberg Many-body effects on the optical spectra of InAs/GaAs quantum dots
 Phys. Rev. B 2000, 62(24), 16881-16885 [ | | IF: 3.767 ] 183 E. Martinet, M.-A. Dupertuis, F. Reinhardt, G. Biasiol, E. Kapon, O. Stier, M. Grundmann, D.Bimberg Separation of strain and quantum-confinement effects in the optical spectra of quantum wires
 Phys. Rev. B 2000, 61(7), 4488-4491 [ | | IF: 3.767 ] 182 M. Grundmann, O. Stier, A. Schliwa, D. Bimberg Electronic structure of cleaved-edge-overgrowth strain-induced quantum wires
 Phys. Rev. B 2000, 61(3), 1744-1747 [ | | IF: 3.767 ] 181 M. Grundmann, O. Stier, S. Bognár, C. Ribbat, F. Heinrichsdorff, D. Bimberg Optical properties of self-organized quantum dots: Modeling and Experiments
 Phys. Status Solidi A 2000, 178(1), 255-262 [ | | IF: 1.648 ] 180 M. Grundmann, A. Krost Atomic structure based simulation of X-ray scattering
 Phys. Status Solidi B 2000, 218(2), 417-423 [ | | IF: 1.522 ] 179 Levon V. Asryan, Marius Grundmann, Nikolai N. Ledentsov, Oliver Stier, Robert A. Suris, Dieter Bimberg Effect of excited-state transitions on the threshold characteristics of a quantum dot laser
 Proc. SPIE 2000, 3944, 823-834 [ | ] 178 D. Bimberg, M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Y.M. Shernyakov, B.V. Volovik, A.F. Tsatsulnikov, P.S. Kop'ev, Zh.I. Alferov Quantum dot lasers: breakthrough in optoelectronics
 Thin Solid Films 2000, 367(1-2), 235-249 [ | | IF: 1.604 ] 177 D. Bimberg, N.N. Ledentsov, R. Sellin, Ch. Ribbat, M. Mao, M. Grundmann, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, Zh.I. Alferov, J.A. Lott Quantum dot lasers 13th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS) 2000, p. 302-303 [ | ] 176 M. Grundmann Rechnet mit den Quanten!
7 hügel - Bilder und Zeichen des 21. Jahrhunderts 2000, VI, 74-78, G. Sievernich, H. Budde, eds. (Henschel, Berlin, 2000) [ ] 175 Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg High power quantum dot lasers at 1140 nm IEEE 17th Int. Semiconductor Laser Conference, Conference Digest 2000, p. 131-132 [ | ] 174 M. Strassburg, O. Schulz, U.W. Pohl, M. Grundmann, D. Bimberg, S. Itoh, K. Makano, A. Ishibashi, M. Klude, D. Hommel Index Guided II-VI Lasers with Low Threshold Current Density Technical Program with Abstracts of the 42nd Electronic Materials Conference (Denver, CO, 2000) 2000, p. 81 [ ] 173 M. Grundmann Quantum dot based semiconductor laser diodes Technical Program with Abstracts of the 42nd Electronic Materials Conference (Denver, CO, 2000) 2000, p. 14 [ ] 172 M. Grundmann, F. Heinrichsdorff, Ch. Ribbat, M.-H. Mao, D. Bimberg Quantum dot lasers: Recent progress in theoretical understanding and demonstration of high output power operation
 Appl. Phys. B 1999, 69, 413-416 [ | | IF: 1.782 ] 171 M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg Diode Lasers Based on Quantum Dots
 Adv. Sol. St. Phys. 1999, 38, 203-214, B. Kramer, ed. [ | ] 170 R. Heitz, I. Mukhametzanov, H. Born, M. Grundmann, A. Hoffmann, A. Madhukar, D. Bimberg Hot carrier relaxation in InAs/GaAs quantum dots
 Physica B 1999, 272, 8-11 [ | | IF: 1.327 ] 169 C.M.A. Kapteyn, M. Lion, F. Heinrichsdorff, R. Heitz, M. Grundmann, D. Bimberg Carrier emission processes in InAs quantum dots
 Physica E 1999, 7(3-4), 388-392 [ | | IF: 1.522 ] 168 M. Grundmann The present status of quantum dot lasers
 Physica E 1999, 5(3), 167-184 [ | | IF: 1.522 ] 167 C.M.A. Kapteyn, F. Heinrichsdorff, O. Stier, R. Heitz, M. Grundmann, N.D. Zakharov, D. Bimberg Electron escape from InAs quantum dots
 Phys. Rev. B 1999, 60(20), 14265-14268 [ | | IF: 3.767 ] 166 O. Stier, M. Grundmann, D. Bimberg Electronic and optical properties of strained quantum dots modeled by 8-band k
 Phys. Rev. B 1999, 59(8), 5688-5701 [ | | IF: 3.767 ] 165 M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, C. Ribbat, D. Bimberg, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, Zh.I. Alferov Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications Extended Abstracts of the 1999 Int. Conf. on Solid State Devices and Materials (ssdm 99, Tokyo) 1999, p. 412-413 [ | ] 164 A. Weber, K. Goede, M. Grundmann, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov Spontaneous mid-infrared emission from quantum dot lasers Proc. 3rd Conf. on Mid-infrared Optical Materials and Devices (MIOMD-3) (Aachen, Germany, 1999) 1999, p. O15:1-2 [ ] 163 M. Grundmann, Ch. Ribbat, M.-H. Mao, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, A.Yu. Egorov, D.A. Lifshits, M.V. Maximov, Yu.M. Shernyakov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov 4 Watt high power quantum dot lasers Technical Program with Abstracts of the 41st Electronic Materials Conference (Santa Barbara, CA, 1999) 1999, p. WED-AM 2 [ ] 162 D. Bimberg, M. Grundmann, N.N. Ledentsov Quantum Dot Heterostructures
(John Wiley & Sons Ltd., Chichester, 1998), ISBN 978-0-471-97388-1 [ link | extra ] 161 A.F. Tsatsul'nikov, A.Yu. Egorov, P.S. Kop'ev, A.R. Kovsh, N.N. Ledentsov, M.V. Maximov, A.A. Suvorova, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, M. Grundmann, D. Bimberg, Zh.I. Alferov Optical properties of InAlAs quantum dots in an AlGaAs matrix
 Appl. Surf. Sci. 1998, 123/124, 381-384 [ | | IF: 2.112 ] 160 V. Türck, F. Heinrichsdorff, M. Veit, R. Heitz, M. Grundmann, A. Krost, D. Bimberg Correlation of InGaAs/GaAs quantum dot and wetting layer formation
 Appl. Surf. Sci. 1998, 123/124, 352-355 [ | | IF: 2.112 ] 159 O. Stier, M. Grundmann, D. Bimberg Inter- and intraband transitions in strained quantum dots modeled in eight-band k
 Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998) 1998, p. VII B70:1-4 (World Scientific, Singapore), D. Gershoni, ed. [ | ] 158 E. Martinet, O. Stier, M. Grundmann, M.A. Dupertuis, A. Gustafsson, A. Rudra, F. Reinhardt, E. Kapon Separation of strain and confinement effects in the photoluminescence excitation spectra of InGaAs/AlGaAs V-groove quantum wires
 Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998) 1998, p. VII B44:1-4 (World Scientific, Singapore), D. Gershoni, ed. [ | ] 157 M. Grundmann, R. Heitz, D. Bimberg, J.H.H. Sandmann, J. Feldmann Modeling of Quantum Dot Optical Properties using Microstates
 Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998) 1998, p. VII B3:1-4 (World Scientific, Singapore), D. Gershoni, ed. [ | ] 156 V.P. Kalosha, G.Ya. Slepyan, S.A. Maksimenko, O. Stier, M. Grundmann, N.N. Ledentsov, D. Bimberg Effective-medium approach for active medium quantum dot laser
 Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998) 1998, p. VII B29:1-4 (World Scientific, Singapore), D. Gershoni, ed. [ | ] 155 C.M.A. Kapteyn, F. Heinrichsdorff, O. Stier, M. Grundmann, D. Bimberg Electron emission from InAs quantum dots
 Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998) 1998, p. VII A3:1-4 (World Scientific, Singapore), D. Gershoni, ed. [ | ] 154 A.F. Tsatsul'nikov, G.E. Cirlin, A.Yu. Egorov, A.O. Golubok, P.S. Kop'ev, A.R. Kovsh, N.N. Ledentsov, S.A. Masalov, M.V. Maximov, V.N. Petrov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, R. Heitz, P. Werner, M. Grundmann, D. Bimberg, Zh.I. Alferov Formation of InAs quantum dots on a silicon (100) surface
 Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998) 1998, p. II E18:1-4 (World Scientific, Singapore), D. Gershoni, ed. [ | ] 153 F. Heinrichsdorff, M. Grundmann, O. Stier, A. Krost, D. Bimberg Influence of In/Ga intermixing on the optical properties of InGaAs/GaAs quantum dots
 J. Cryst. Growth 1998, 195(1-4), 540-545 [ | | IF: 1.552 ] 152 J. Rockenberger, L. Tröger, A.L. Rogach, M. Tischer, M. Grundmann, A. Eychmüller, H. Weller The Contribution of Particle Core and Surface to Strain, Disorder and Vibrations in Thiolcapped CdTe Nanocrystals
 J. Chem. Phys. 1998, 108(18), 7807-7815 [ | ] 151 A.F. Tsatsul'nikov, S.V. Ivanov, P.S. Kop'ev, A.K. Kryganovskii, N.N. Ledentsov, M.V. Maximov, B.Ya. Mel'tser, P.V. Nekludov, A.A. Suvorova, A.N. Titkov, B.V. Volovik, M. Grundmann, D.Bimberg, Zh.I. Alferov Formation of InSb quantum dots in a GaSb matrix
 J. Electr. Mat. 1998, 27, 414-417 [ | | IF: 1.635 ] 150 H. Nakashima, T. Kato, K. Maehashi, T. Nishida, Y. Inoue, T. Yoshiji, T. Takeuchi, K. Inoue, P. Fischer, J. Christen, M. Grundmann, D. Bimberg Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE
 Mat. Sci. Engin. B 1998, 51(1-3), 229-232 [ | | IF: 2.331 ] 149 D. Bimberg, M. Grundmann, N.N. Ledentsov Growth, spectroscopy and laser application of self-ordered III-V quantum dots
 MRS Bull. 1998, 2(3), 31-34 [ | | IF: 5.024 ] 148 D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, M.V. Maximov, Zh.I. Alferov, J.A. Lott Application of self-organized quantum dots to edge emitting and vertical cavity lasers
 Physica E 1998, 3(1-3), 129-136 [ | | IF: 1.522 ] 147 M. Grundmann, O. Stier, D. Bimberg Electronic states in strained cleaved edge overgrowth quantum wires and quantum dots
 Phys. Rev. B 1998, 58(16), 10557-10561 [ | | IF: 3.767 ] 146 R. Heitz, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, A. Hoffmann, A. Madhukar, D. Bimberg Excited states and energy relaxation in stacked InAs/GaAs quantum dots
 Phys. Rev. B 1998, 57(15), 9050-9060 [ | | IF: 3.767 ] 145 F. Hatami, M. Grundmann, N.N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, S.V. Ivanov, B.Ya. Meltser, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov Carrier Dynamics in Type-II GaSb/GaAs Quantum Dots
 Phys. Rev. B 1998, 57(8), 4635-4641 [ | | extra | IF: 3.767 ] 144 D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J. Lott Edge and vertical cavity surface emitting InAs quantum dot lasers
 Sol. St. Electr. 1998, 42(7-8), 1433-1437 [ | | IF: 1.482 ] 143 G.E. Cirlin, V.G. Dubrovskii, V.N. Petrov, N.K. Polyakov, N.P. Korneeva, V.N. Demidov, A.O. Golubok, S.A. Masalov, D.V. Kurochkin, O.M. Gorbenko, N.I. Komyak, V.M. Ustinov, A.Yu. Egorov, A.R. Kovsh, M.V. Maximov, A.F. Tsatsul'nikov, B.V. Volovik, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, M. Grundmann, D. Bimberg Formation of InAs quantum dots on silicon (100) surface
 Semic. Sci. Technol. 1998, 13(11), 1262-1265 [ | | IF: 2.098 ] 142 M. Grundmann, N.N. Ledentsov, N. Kirstaedter, F. Heinrichsdorff, A. Krost, D. Bimberg, A.O. Kosogov, S.S. Ruvimov, P. Werner, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov Semiconductor Quantum Dots for Application in Diode Lasers
 Thin Solid Films 1998, 318(1-2), 83-87 [ | | IF: 1.604 ] 141 J. Rockenberger, L. Tröger, A.L. Rogach, M. Tischer, M. Grundmann, H. Weller, A. Eychmüller An EXAFS study on thiolcapped CdTe nanocrystals
Ber. Bunsenges. Phys. Chem. 1998, 102(11), 1561-1564 [ | ] 140 D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff Competitive Vertical Cavity and Edge Emitting Quantum Dot Lasers Conf. on Lasers and Electro-Optics Europe (CLEO/Europe) 1998, p. 63 [ | ] 139 M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg Neuartige Halbleiterlaser auf der Basis von Quantenpunkten Laser und Optoelektronik 1998, 30, 70-77 [ ] 138 A.F. Tsatsul'nikov, S.V Ivanov, P.S. Kop'ev, I.L. Krestnikov, A.K. Kryganovskii, N.N. Ledentsov, M.V. Maximov, B.Ya. Mel'tser, P.V. Nekludov, A.A. Suvorova, A.N. Titkov, B.V. Volovik, M. Grundmann, D. Bimberg, Zh.I. Alferov Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy Microelectr. Engin. 1998, 43-44, 85-90 [ | ] 137 A.F. Tsatsul'nikov, M.V. Belousov, N.A. Bert, A.Yu. Egorov, P.S. Kop'ev, A.R. Kovsh, I.L. Krestnikov, N.N. Ledentsov, M.V. Maximov, A.A. Suvorova, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, M. Grundmann, D. Bimberg, Zh.I. Alferov Lateral association of vertically-coupled quantum dots Microelectr. Engin. 1998, 43, 37-43 [ | ] 136 M. Grundmann, R. Heitz, D. Bimberg Carrier statistics in quantum-dot lasers Physics of the Solid State 1998, 40(5), 772-774 [ | ] 135 L. Finger, M. Nishioka, R. Hogg, F. Heinrichsdorff, M. Grundmann, D. Bimberg, Y. Arakawa Modification of energy relaxation of InGaAs quantum dots by post growth annealing Proc. 10th Int. Conf. on Indium Phosphide an Related Materials (IPRM'98), IEEE Catalog #98CH36129 1998, p. 151-154 [ | ] 134 M. Grundmann, N.N. Ledentsov, F. Heinrichsdorff, M.-H. Mao, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott InAs/GaAs Quantum Dot Injection Lasers Trends in Optics and Photonics Series 1998, 18, 34-38 (The Optical Society of America, Washington, D.C., 1998) [ | ] 133 A.A. Darhuber, V. Holy, J. Stangl, G. Bauer, A. Krost, F. Heinrichsdorff, M. Grundmann, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, A.O. Kosogov, P. Werner Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution X-ray diffraction
 Appl. Phys. Lett. 1997, 70(8), 955-957 [ | | IF: 3.794 ] 132 M. Kappelt, V. Türck, M. Grundmann, H. Cerva, D. Bimberg Low pressure metal-organic chemical vapor deposition of InP/InAlAs/InGaAs quantum wires
 J. Cryst. Growth 1997, 170(1-4), 590-594 [ | | IF: 1.552 ] 131 F. Heinrichsdorff, A. Krost, M. Grundmann, D. Bimberg, F. Bertram, J. Christen, A. Kosogov, P. Werner Self Organization Phenomena of InGaAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
 J. Cryst. Growth 1997, 170(1-4), 568-573 [ | | IF: 1.552 ] 130 M. Grundmann, D. Bimberg Gain and Threshold of Quantum Dot Lasers: Theory and Comparison with Experiments
 Jpn. J. Appl. Phys. 1997, 36(6B), 4181-4187 [ | | IF: 1.067 ] 129 F. Heinrichsdorff, A. Krost, N. Kirstaedter, M.-H. Mao, M. Grundmann, D. Bimberg, A.O. Kosogov, P. Werner InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
 Jpn. J. Appl. Phys. 1997, 36(6B), 4129-4133 [ | | IF: 1.067 ] 128 A.A. Darhuber, V. Holy, J. Stangl, G. Bauer, A. Krost, M. Grundmann, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, A.O. Kosogov, P. Werner High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots
 Jpn. J. Appl. Phys. 1997, 36(6B), 4084-4087 [ | | IF: 1.067 ] 127 D. Bimberg, N.N. Ledentsov, M. Grundmann, R. Heitz, J. Böhrer, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov Luminescence properties of semiconductor quantum dots
 J. Lumin. 1997, 72-74, 34-37 [ | | IF: 2.144 ] 126 N.N. Ledentsov, N. Kirstaedter, M. Grundmann, D. Bimberg, V.M. Ustinov, I.V. Kochnev, P.S. Kop'ev, Zh.I. Alferov Three-dimensional arrays of self-ordered quantum dots for laser applications
 Microelectr. J. 1997, 28(8-10), 915-931 [ | | IF: 0.912 ] 125 M. Grundmann, D. Bimberg Selbstordnende Quantenpunkte: Vom Festk
 Physikal. Bl. 1997, 53(6), 517-522 [ | ] 124 M. Grundmann, R. Heitz, D. Bimberg New approach to modeling carrier distribution in quantum dot ensembles: Gain and threshold of QD lasers and impact of phonon bottleneck
 Physica E 1997, 2(1-4), 725-728 [ | | IF: 1.522 ] 123 R. Heitz, M. Veit, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, N.N. Ledentsov, A. Hoffmann, A. Madhukar, D. Bimberg, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov Hot Carrier Relaxation in InAs/GaAs Quantum Dots
 Physica E 1997, 2(1-4), 578-582 [ | | IF: 1.522 ] 122 M. Grundmann, D. Bimberg Theory of random population for quantum dots
 Phys. Rev. B 1997, 55(15), 9740-9745 [ | | IF: 3.767 ] 121 V. Türck, O. Stier, F. Heinrichsdorff, M. Grundmann, D. Bimberg Quantum wires in staggered band line-up single heterostructures with corrugated interfaces
 Phys. Rev. B 1997, 55(12), 7733-7742 [ | | IF: 3.767 ] 120 M. Grundmann, D. Bimberg Formation of quantum dots in twofold cleaved edge overgrowth
 Phys. Rev. B 1997, 55(7), 4054-4056 [ | | IF: 3.767 ] 119 M. Grundmann, D. Bimberg Theory of quantum dot laser gain and threshold: Correlated versus uncorrelated electron and hole capture
 Phys. Status Solidi A 1997, 164(1), 297-300 [ | | IF: 1.648 ] 118 M. Grundmann, R. Heitz, D. Bimberg, J.H.H. Sandmann, J. Feldmann Carrier Dynamics in Quantum Dots: Modeling with Master Equations for the Transitions between Micro-states
 Phys. Status Solidi B 1997, 203(1), 121-132 [ | | IF: 1.522 ] 117 M. Takeuchi, T. Takeuchi, Y. Inoue, T. Kato, K. Inoue, H. Nakashima, K. Maehashi, P. Fischer, J. Christen, M. Grundmann, D. Bimberg Uniform GaAs quantum wires formed on vicinal GaAs(110) surfaces by two-step MBE growth
 Superlatt. Microstr. 1997, 22(1), 43-49 [ | | IF: 1.564 ] 116 A.A. Darhuber, J. Stangl, V. Holy, G. Bauer, A. Krost, M. Grundmann, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, A.O. Kosogov, P. Werner Structural Characterization of Self-assembled Quantum Dot structures by X-ray Diffraction Technique
 Thin Solid Films 1997, 306(2), 198-204 [ | | IF: 1.604 ] 115 D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott Edge and surface emitting quantum dot lasers Int. Electron Devices Meeting 1997 (IEDM-97), Technical Digest, IEEE Catalog #97CH36103 1997, p. 381 [ | ] 114 V.A. Shchukin, N.N. Ledentsov, M. Grundmann, D. Bimberg Self-Ordering of Nanostructures on Semiconductor Surfaces
NATO ASI Series, Series E: Applied Sciences 1997, 344, 257, G. Abstreiter, A. Aydinli, J.-P. Leburton, eds. (Kluwer, Dordrecht, 1997), ISBN 978-0-7923-4728-6 [ link ] 113 R. Heitz, M. Veit, M. Grundmann, N.N. Ledentsov, A. Hoffmann, D. Bimberg, A. Kalburge, Q. Xie, P. Chen, A. Madhukar, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov Carrier capture and relaxation processes in InAs/GaAs quantum dots Phys. Low-Dim. Struct. 1997, 11/12, 1 112 P. Fischer, J. Christen, M. Takeuchi, H. Nakashima, K. Maehashi, K. Inoue, G. Austing, M. Grundmann, D. Bimberg Luminescence characterization of selforganized GaAs quantum wires: carrier capture and thermalization Proc. 4th Int. Symp. on Quantum Confinement, PV 97-11, ISBN 1-56677-138-2 1997, p. 366 (The Electrochemical Society, Pennington, 1997) 111 D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kopev, Zh.I. Alferov, J.A. Lott Fabry-Perot and vertical cavity surface emitting InAs quantum dot lasers Proc. IEEE 24th Int. Symp. on Compound Semiconductors 1997, p. 547-552 [ | ] 110 M. Kappelt, M. Grundmann, A. Krost, V. Türck, D. Bimberg InGaAs quantum wires grown by low pressure metal-organic chemical vapor deposition on InP V-grooves
 Appl. Phys. Lett. 1996, 68(25), 3596-3598 [ | | IF: 3.794 ] 109 F. Heinrichsdorff, M. Grundmann, A. Krost, D. Bimberg, A. Kosogov, P. Werner Self-organization processes in InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
 Appl. Phys. Lett. 1996, 68(23), 3284-3286 [ | | IF: 3.794 ] 108 M. Herrscher, M. Grundmann, E. Dröge, St. Kollakowski, E.H. Böttcher, D. Bimberg Epitaxial liftoff InGaAs/InP MSM photodetectors on Si
 Electr. Lett. 1996, 31(16), 1383-1384 [ | | IF: 1.038 ] 107 M. Lowisch, M. Rabe, N. Hoffmann, R. Mitdank, B. Stegemann, F. Henneberger, M. Grundmann, V. Türck, D. Bimberg Zero-dimensional excitons in (Zn,Cd)Se quantum structures
 Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996) 1996, p. 1457-1460 (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds. [ ] 106 R. Heitz, A. Kalburge, Q. Xie, M. Veit, M. Grundmann, P. Chen, A. Madhukar, D. Bimberg Energy relaxation in InAs/GaAs quantum dots
 Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996) 1996, p. 1425-1428 (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds. [ ] 105 F. Heinrichsdorff, A. Krost, M. Grundmann, R. Heitz, D. Bimberg, A. Kosogov, P. Werner, F. Bertram, J. Christen Kinetically and thermodynamically induced self-organization effects in the growth of quantum dots by MOCVD
 Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996) 1996, p. 1321-1324 (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds. [ ] 104 A.A. Darhuber, J. Stangl, G. Bauer, A. Krost, F. Heinrichsdorff, M. Grundmann, D. Bimberg Structural characterization of single and multiple layers of self-assembled InGaAs quantum dots by high resolution X-ray diffraction reflectivity
 Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996) 1996, p. 1293-1296 (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds. [ ] 103 O. Stier, M. Grundmann, D. Bimberg Eight-band k.p analysis of pseudomorphic quantum wires
 Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996) 1996, p. 1177-1180 (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds. [ ] 102 L. Parthier, R. Rogaschewski, M. von Ortenberg, V. Rossin, F. Henneberger, M. Grundmann, D. Bimberg In-situ growth and characterization of ZnSe quantum wires on patterned GaAs
 Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996) 1996, p. 1149-1152 (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds. [ ] 101 M. Kuttler, M. Grundmann, R. Heitz, U.W. Pohl, D. Bimberg, H. Stanzl, B. Hahn, W. Gebhardt Diffusion induced disordering (DID) in ZnSSe/ZnSe superlattices
 J. Cryst. Growth 1996, 159(1-4), 514-517 [ | | IF: 1.552 ] 100 D. Bimberg, N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O.G. Schmidt, M.H. Mao, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov, S.S. Ruvimov, U. Gösele, J. Heydenreich InAs/GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization properties
 Jpn. J. Appl. Phys. 1996, 35(2S), 1311-1319 [ | | IF: 1.067 ] 99 X. Yang, L.J. Brillson, A.D. Raisanen, L. Vanzetti, A. Bonanni, A. Franciosi, M. Grundmann, D. Bimberg Evolution of deep levels and internal photoemission with annealing temperature at ZnSe/GaAs interfaces
 J. Vac. Sci. Technol. B 1996, 14(4), 2961-2966 [ | | IF: 1.267 ] 98 S. Ruvimov, Z. Liliental-Weber, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, P.S. Kop'ev, Zh.I. Alferov, K. Scheerschmidt, U. Gösele TEM Structural Characterization of nm-Scale Islands in Highly Mismatched Systems
 Proc. Mat. Res. Soc. 1996, 421, 383-388 [ | ] 97 H. Nakashima, M. Takeuchi, K. Inoue, T. Takeuchi, Y. Inoue, P. Fischer, J. Christen, M. Grundmann, D. Bimberg Size-dependent luminescence of GaAs quantum wires on vicinal GaAs (110) surfaces with giant steps formed by MBE
 Physica B 1996, 227(1-4), 291-294 [ | | IF: 1.327 ] 96 M. Lowisch, M. Rabe, B. Stegemann, F. Henneberger, M. Grundmann, V. Türck, D. Bimberg Zero-dimensional excitons in (Zn,Cd)Se quantum structures
 Phys. Rev. B 1996, 54(16), R11074-R11077 [ | | IF: 3.767 ] 95 N.N. Ledentsov, V.A. Shchukin, M. Grundmann, N. Kirstaedter, J. Böhrer, O. Schmidt, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, S.V. Zaitsev, N.Yu. Gordeev, Zh.I. Alferov, A.I. Borovkov, A.O. Kosogov, S.S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
 Phys. Rev. B 1996, 54(12), 8743-8750 [ | | IF: 3.767 ] 94 M. Grundmann, N.N. Ledentsov, O. Stier, J. Böhrer, D. Bimberg, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov Nature of optical transitions in self-organized InAs/GaAs quantum dots
 Phys. Rev. B 1996, 53(16), R10509-R10511 [retracted] [ | | IF: 3.767 ] 93 N.N. Ledentsov, J. Böhrer, M. Beer, F. Heinrichsdorff, M. Grundmann, D. Bimberg, S.V. Ivanov, B.Ya. Meltser, I.N. Yassievich, N.A. Falev, P.S. Kop'ev, Zh.I. Alferov Radiative states in type-II GaSb/GaAs quantum wells
 Phys. Rev. B 1996, 52(19), 14058-14066 [ | | IF: 3.767 ] 92 D. Bimberg, N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O.G. Schmidt, M.H. Mao, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov, S.S. Ruvimov, U. Gösele, J. Heydenreich InAs-GaAs Quantum Dots: From Growth to Lasers
 Phys. Status Solidi B 1996, 194(1), 159-173 [ | | IF: 1.522 ] 91 M. Grundmann, R. Heitz, N. Ledentsov, O. Stier, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, S.S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich Electronic Structure and Energy Relaxation in Strained InAs/GaAs Quantum Pyramids
 Superlatt. Microstr. 1996, 19(2), 81-95 [ | | IF: 1.564 ] 90 R. Heitz, M. Grundmann, N.N. Ledentsov, L. Eckey, M. Veit, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop’ev, Zh.I. Alferov Exciton relaxation in self-organized InAs/GaAs quantum dots
 Surf. Sci. 1996, 361/362, 770-773 [ | | IF: 1.838 ] 89 G.E. Cirlin, G.M. Guryanov, V.N. Petrov, N.K. Polyakov, A.O. Golubok, S.Ya. Tipissev, V.B. Gubanov, Yu.B. Samsonenko, N.N. Ledentsov, V.A. Shchukin, M. Grundmann, D. Bimberg, Zh.I. Alferov STM and RHEED study of InGaAs/GaAs quantum dots obtained by submonolayer epitaxial techniques
 Surf. Sci. 1996, 352-354, 651-655 [ | | IF: 1.838 ] 88 G.E. Cirlin, G.M. Guryanov, A.O. Golubok, S.Ya. Tipissev, N.N. Ledentsov, V.A. Shchukin, M. Grundmann, D. Bimberg, Zh.I. Alferov An intermediate (1.0-1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy
 Surf. Sci. 1996, 352-354, 646-650 [ | | IF: 1.838 ] 87 V.A. Shchukin, N.N. Ledentsov, M. Grundmann, P.S. Kop’ev, D. Bimberg Strain-induced formation and tuning of ordered nanostructures on crystal surfaces
 Surf. Sci. 1996, 352-354, 117-122 [ | | IF: 1.838 ] 86 N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O. Schmidt, R. Heitz, J. Böhrer, D. Bimberg, V.M. Ustinov, V.A. Shchukin, A.Yu. Egorov, A.E. Zhukov, S. Zaitsev, P.S. Kop'ev, Zh.I. Alferov, S.S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich Ordered Arrays of Quantum Dots: Formation, Electronic Spectra and Relaxation Phenomena
 Sol. St. Electr. 1996, 40(1-8), 785-798 [ | | IF: 1.482 ] 85 H. Nakashima, M. Takeuchi, K. Kimura, M. Iwane, Hu Kun Huang, K. Inoue, J. Christen, M. Grundmann, D. Bimberg Photo- and cathodoluminescence of AlGaAs single quantum wires on vicinal GaAs (110) surfaces
 Sol. St. Electr. 1996, 40, 319-322 [ | | IF: 1.482 ] 84 M. Kappelt, V. Türck, M. Grundmann, H. Cerva, D. Bimberg InP/InAlAs/InGaAs quantum wires III-Vs Review 1996, 9(6), 32-38 [ | ] 83 M. Grundmann, N.N. Ledentsov, R. Heitz, O. Stier, N. Kirstaedter, D. Bimberg, S. Ruvimov, A.O. Kosogov, P. Werner, J. Heydenreich, U. Gösele, V.M. Ustinov, M. Maximov, A.Yu. Egorov, P.S. Kop'ev, Zh.I. Alferov InAs/GaAs Quantum Dots: Single Sheets, Stacked Dots and Vertically Coupled Dots Proc. 3rd Int. Symp. on Quantum Confinement (ECS-188, Chicago, USA), PV 75-17 (The Electrochemical Society, Pennington, USA) 1996, p. 80-83 [ ] 82 N. Kirstaedter, O. Schmidt, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov, A.O. Kosogov, U. Gösele, J. Heydenreich Static and dynamic properties of (InGa)As/GaAs quantum dot lasers Proc. 8th Annual Meeting of IEEE Lasers and Electro-Optics Society (LEOS '95), IEEE Catalog #95CH35739, ISBN 0-7803-2450-1 1996, 1, 290-291 [ | ] 81 M. Kappelt, V. Türck, M. Grundmann, H. Cerva, D. Bimberg InP/InAlAs/InGaAs quantum wires Proc. 8th Int. Conf. on Indium Phosphide an Related Materials (IPRM-8), IEEE Catalog #96CH35930, Library of Congress #96-75713 1996, p. 757-760 [ | ] 80 M. Grundmann, N.N. Ledentsov, R. Heitz, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov, A.O. Kosogov, P. Werner, J. Heydenreich, U. Gösele Growth, Characterization, Theory and Lasing of Vertically Stacked Quantum Dots Proc. 8th Int. Conf. on Indium Phosphide an Related Materials (IPRM-8), IEEE Catalog #96CH35930, Library of Congress #96-75713 1996, p. 738-741 [ | ] 79 M. Grundmann Pseudomorphe Quantenpunkte PTB-Bericht PTB-E-53 - Niederdimensionale Quantenstrukturen und Materialien für blaue Lichtquellen 1996, p. 2-18, A. Schlachetzki, H. Bachmair, eds. (PTB, Braunschweig, 1996), ISBN 3-89429-782-4 [ | link ] 78 D. Bimberg, M. Grundmann, N.N. Ledentsov Quantenpunkt-Laser
Spektrum der Wissenschaft 1996, 11, 64-68 [ | link ] 77 M. Grundmann, N.N. Ledentsov, O. Stier, D. Bimberg, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov Excited states in self-organized InAs/GaAs quantum dots: Theory and experiment
 Appl. Phys. Lett. 1995, 68(7), 979-981 [ | | IF: 3.794 ] 76 R. Heitz, M. Grundmann, N.N. Ledentsov, L. Eckey, M. Veit, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots
 Appl. Phys. Lett. 1995, 68(3), 361-363 [ | | IF: 3.794 ] 75 G.E. Cirlin, G.M. Guryanov, A.O. Golubok, S.Ya. Tipissev, N.N. Ledentsov, P.S. Kop'ev, M. Grundmann, D. Bimberg Ordering Phenomena in InAs Strained Layer Morphological Transformation on GaAs (100) Surface
 Appl. Phys. Lett. 1995, 67(1), 97-99 [ | | IF: 3.794 ] 74 F. Hatami, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, D. Bimberg, S.S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich Radiative Recombination in Type-II GaSb/GaAs Quantum Dots
 Appl. Phys. Lett. 1995, 67(5), 656-658 [ | | IF: 3.794 ] 73 V. Türck, O. Stier, F. Heinrichsdorff, M. Grundmann, D. Bimberg Electron Quantum Wires in Type II Single Heterostructures on Nonplanar Substrates
 Appl. Phys. Lett. 1995, 67(12), 1712-1714 [ | | IF: 3.794 ] 72 M. Grundmann Pseudomorphic InAs/GaAs Quantum Dots on Low Index Planes
 Adv. Sol. St. Phys. 1995, 35, 123-154 [ | ] 71 N.N. Ledentsov, M. Grundmann, N. Kirstaedter, J. Christen, R. Heitz, J. Böhrer, F. Heinrichsdorff, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V.M. Ustinov, A.Yu. Egorov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov Luminescence and Structural Properties of (In,Ga)As/GaAs Quantum Dots
 Proc. 22nd Int. Conf. on the Physics of Semiconductors (ICPS-22), (Vancouver, Canada, 1994) 1995, 3, 1855-1858 (World Scientific, Singapore), D.J. Lockwood, ed. [ | ] 70 J. Christen, M. Grundmann, M. Joschko, D. Bimberg, E. Kapon Cooling of 1-dimensional Carriers via Inter- and Intrasubband Relaxation in GaAs Quantum Wires
 Proc. 22nd Int. Conf. on the Physics of Semiconductors (ICPS-22), (Vancouver, Canada, 1994) 1995, 2, 1759-1762 (World Scientific, Singapore), D.J. Lockwood, ed. [ | ] 69 M. Grundmann, J. Christen, M. Joschko, D. Bimberg, E. Kapon Bandgap Renormalization in Quantum Wires
 Proc. 22nd Int. Conf. on the Physics of Semiconductors (ICPS-22), (Vancouver, Canada, 1994) 1995, 2, 1675-1678 (World Scientific, Singapore), D.J. Lockwood, ed. [ | ] 68 N.N. Ledentsov, J. Böhrer, M. Beer, M. Grundmann, F. Heinrichsdorff, D. Bimberg, S.V. Ivanov, B.Ya. Meltser, I.N. Yassievich, N.A. Faleev, P.S. Kop'ev, Zh.I. Alferov Type-II Heterostructures based on GaSb Sheets in a GaAs Matrix
 Proc. 22nd Int. Conf. on the Physics of Semiconductors (ICPS-22), (Vancouver, Canada, 1994) 1995, 2, 1616-1619 (World Scientific, Singapore), D.J. Lockwood, ed. [ | ] 67 R.F. Schnabel, M. Grundmann, R. Engelhardt, J. Oertel, A. Krost, D. Bimberg, R. Opitz, M. Schmidbauer, R. Köhler High Quantum Efficiency InP-Mesas Grown by Hybrid Epitaxy on Si Substrates
 J. Cryst. Growth 1995, 156(4), 337-342 [ | | IF: 1.552 ] 66 R.F. Schnabel, A. Krost, M. Grundmann, D. Bimberg, H. Cerva Maskless Selective Area Growth of InP on sub-
 J. Electr. Mat. 1995, 24, 1625-1629 [ | | IF: 1.635 ] 65 H. Nakashima, M. Takeuchi, K. Sato, K. Shiba, H.K. Huang, K. Maehashi, K. Inoue, J. Christen, M. Grundmann, D. Bimberg Formation of AlGaAs quantum wires on vicinal GaAs(110) surfaces misoriented 3
 Mat. Sci. Engin. B 1995, 35(1-3), 295-298 [ | | IF: 2.331 ] 64 N.N. Ledentsov, M.V. Maximov, P.S. Kop'ev, V.M. Ustinov, M.V. Belousov, B.Ya. Meltser, S.V. Ivanov, V.A. Shchukin, Zh.I. Alferov, M. Grundmann, D. Bimberg, S.S. Ruvimov, W. Richter, P. Werner, U. Gösele, J. Heydenreich, P.D. Wang, C.M. Sotomayor Torres Optical Spectroscopy of Self-Organized Nanoscale Heterostructures Involving High-Index Surfaces
 Microelectr. J. 1995, 26(8), 871-879 [ | | IF: 0.912 ] 63 M. Grundmann, O. Stier, D. Bimberg InAs/GaAs Quantum Pyramids: Strain Distribution, Optical Phonons and Electronic Structure
 Phys. Rev. B 1995, 52(16), 11969-11981 [ | | IF: 3.767 ] 62 S. Ruvimov, P. Werner, K. Scheerschmidt, J. Heydenreich, U. Richter, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, P.S. Kop’ev, Zh.I. Alferov Structural Characterization of (In,Ga)As Quantum Dots in a GaAs Matrix
 Phys. Rev. B 1995, 51(20), 14766-14769 [ | | IF: 3.767 ] 61 M. Grundmann, J. Christen, N.N. Ledentsov, J. Böhrer, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov Ultranarrow Luminescence Lines from Single Quantum Dots
 Phys. Rev. Lett. 1995, 74(20), 4043-4046 [ | | IF: 7.645 ] 60 M. Grundmann, N.N. Ledentsov, R. Heitz, L. Eckey, J. Böhrer, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, J. Heydenreich, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov InAs/GaAs Quantum Dots: Radiative Recombination from Zero-dimensional States
 Phys. Status Solidi B 1995, 188(1), 249-258 [ | | IF: 1.522 ] 59 D. Bimberg, M. Grundmann, N.N. Ledentsov, S.S. Ruvimov, P. Werner, U. Richter, J. Heydenreich, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov Self-organization processes in MBE grown quantum dot structures
 Thin Solid Films 1995, 267(1-2), 32-36 [ | | IF: 1.604 ] 58 D. Bimberg, N. N. Ledentsov, N. Kirstaedter, O. Schmidt, M. Grundmann, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, M. V. Maximov, P. S. Kop'ev, Zh. I. Alferov, S. S. Ruvimov, U. Gösele, J. Heydenreich InAs-GaAs Quantum Dot Lasers: in Situ Growth, Radiative Lifetimes and Polarization Properties Extended Abstracts of the 1995 Int. Conf. on Solid State Devices and Materials (ssdm 95, Osaka) 1995, p. 716-718 [ | ] 57 H. Nakashima, M. Takeuchi, K. Kimura, M. Iwane, H.K. Huang, K. Inoue, J. Christen, M. Grundmann, D. Bimberg Formation and characterization of AlGaAs quantum wires on vicinal (110) surfaces Extended Abstracts of the 1995 Int. Conf. on Solid State Devices and Materials (ssdm'95, Osaka) 1995, p. 785-787 [ | ] 56 S. Ruvimov, P. Werner, K. Scheerschmidt, U. Richter, U. Gösele, J. Heydenreich, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, P.S. Kop'ev, Zh.I. Alferov TEM/HREM Characterization of Self-organized (In,Ga)As Quantum Dots Inst. Phys. Conf. Ser. 1995, 146, 31 55 V.A. Shchukin, A.I. Borovkov, N.N. Ledentsov, P.S. Kop’ev, M. Grundmann, D. Bimberg Stress-induced formation of ordered nanostructures on crystal surfaces Phys. Low-Dim. Struct. 1995, 12, 43 54 F. Heinrichsdorff, A. Krost, M. Grundmann, J. Böhrer, R. Heitz, D. Bimberg, A. Darhuber, G. Bauer, M. Wassermeier, S.S. Ruvimov MOCVD grown InGaAs/GaAs quantum dots Proc. VI European Workshop of MOVPE and Related Techniques (Gent, 1995):1-3 [ ] 53 N. Kirstaedter, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, S.S. Ruvimov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov, U. Richter, P. Werner, U. Gösele, J. Heydenreich Low Threshold, large T0 Injection Laser Emission from (InGa)As Quantum Dots
 Electr. Lett. 1994, 30(17), 1416-1417 [ | | IF: 1.038 ] 52 E. Dröge, R.F. Schnabel, E.H. Böttcher, M. Grundmann, A. Krost, D. Bimberg High-speed InGaAs on Si Metal-semiconductor-metal Photodetectors
 Electr. Lett. 1994, 30(16), 1348-1350 [ | | IF: 1.038 ] 51 M. Grundmann, J. Christen, F. Heinrichsdorff, A. Krost, D. Bimberg Strain Distribution in InP Grown on Patterned Si: Direct Visualization by Cathodoluminescence Wavelength Imaging
 J. Electr. Mat. 1994, 23, 201-206 [ | | IF: 1.635 ] 50 M. Grundmann, E. Kapon, J. Christen, D. Bimberg Electronic and Optical Properties of Quasi One-dimensional Carriers in Quantum Wires
 J. Nonlin. Opt. Phys. Mat. 1994, 4(1), 99-140 [ | | IF: 0.481 ] 49 M. Grundmann, O. Stier, D. Bimberg Symmetry Breaking in Pseudomorphic V-groove Quantum Wires
 Phys. Rev. B 1994, 50(19), 14187-14192 [ | | IF: 3.767 ] 48 M. Grundmann, O. Stier, J. Christen, D. Bimberg Pseudomorphic Quantum Wires: Symmetry Breaking due to Structural, Strain and Piezoelectric Field Induced Confinement
 Superlatt. Microstr. 1994, 16(4), 249-251 [ | | IF: 1.564 ] 47 M. Grundmann, J. Christen. V. Tuerck, E. Kapon, R. Bhat, C. Caneau, D.M. Hwang, D. Bimberg Radiative Recombination in Pseudomorphic InGaAs/GaAs Quantum Wires Grown on Nonplanar Substrates
 Sol. St. Electr. 1994, 37(4-6), 1097-1100 [ | | IF: 1.482 ] 46 M. Grundmann, J. Christen, M. Joschko, D. Bimberg, E. Kapon Recombination kinetics and intersubband relaxation in semiconductor quantum wires
 Semic. Sci. Technol. 1994, 9(11S), 1939-1945 [ | | IF: 2.098 ] 45 J. Christen, E. Kapon, M. Grundmann, M. Walther, D. Bimberg InGaAs Strained Quantum Wire Structures: Optical Properties and Laser Applications Extended Abstracts of the 1994 Int. Conf. on Solid State Devices and Materials (ssdm 94, Yokohama) 1994, p. 66-68 [ | ] 44 M. Grundmann, A. Krost, D. Bimberg, H. Cerva The Formation of Interfaces and Crystal Defects: A case study of InGaAs Quantum Wells on InP/Si(001) Proc. 4th Int. Conf. Formation of Semiconductor Interfaces (ICFSI-4) 1994, p. 530-533, H. L, ed. (World Scientific, Singapore, 1994) [ ] 43 R.F. Schnabel, M. Grundmann, A. Krost, J. Christen, F. Heinrichsdorff, D. Bimberg, H. Cerva Defect Reduction and Strain Relaxation Mechanisms in InP grown on Patterned Si(001) Proc. 6th Int. Conf. on InP and Rel. Compounds (IPRM-6), IEEE Catalog #94CH3369-6, Library of Congress #93-61270 1994, p. 640-643 [ | ] 42 M. Grundmann, V. Tuerck, J. Christen, R. F. Schnabel, D. Bimberg, E. Kapon, D.M. Hwang, C. Caneau, R. Bhat Strained InGaAs/GaAs Quantum Wires: Modelling and Optical Properties Proc. 6th Int. Conf. on InP and Rel. Compounds (IPRM-6), IEEE Catalog #94CH3369-6, Library of Congress #93-61270 1994, p. 451-454 [ | ] 41 R. F. Schnabel, A. Krost, M. Grundmann, F. Heinrichsdorff, D. Bimberg, M. Pilatzek, P. Harde Epitaxy of High Resistivity InP on Si
 Appl. Phys. Lett. 1993, 63(26), 3607-3609 [ | | IF: 3.794 ] 40 H.M. Cox, D.M. Hwang, M.R. Frei, C. Caneau, M. Grundmann, D. Bimberg Simultaneous Planarized Selective-Area Epitaxy of GaxIn1-xAs in Normal and Dove-tail Etched Grooves
 Proc. Mat. Res. Soc. 1993, 326, 561-566 [ | ] 39 E. Kapon, M. Walther, D.M. Hwang, E. Colas, C. Caneau, R. Bhat, J. Christen, M. Grundmann, D. Bimberg Carrier Capture and Stimulated Emission in Quantum Well Lasers Grown on non-planar Substrates
NATO ASI Series E: Applied Sciences 1993, 236, 317-330, J.-P. Leburton, J. Pascual, C. Sotomayor-Torres, eds. (Kluwer, Dordrecht, 1993), ISBN 0792322770 [ | ] 38 R.F. Schnabel, F. Heinrichsdorff, A. Krost, M. Grundmann, T. Wolf, K. Schatke, D. Bimberg, M. Pilatzek, P. Harde Semi-insulating InP:Fe on Si Proc. 5th Int. Conf. on Indium Phosphide and Related Compounds (IPRM-5), IEEE Catalog #93CH3276-3, Library of Congress #93-77243 1993, p. 115-118 [ | ] 37 J. Christen, M. Grundmann, E. Kapon, E. Colas, D.M. Hwang, D. Bimberg Ultrafast carrier capture and long recombination lifetime of quasi one dimensional carriers in GaAs quantum wires
 Appl. Phys. Lett. 1992, 61(1), 67-69 [ | | IF: 3.794 ] 36 M. Grundmann, A. Krost, D. Bimberg, O. Ehrmann Maskless Growth of InP stripes on patterned Si (001): Defect Reduction and Improvement of Optical Properties
 Appl. Phys. Lett. 1992, 60(26), 3292-3294 [ | | IF: 3.794 ] 35 J. Christen, V. Petrova-Koch, V. Lehmann, T. Muschik, A. Kux, M. Grundmann, D. Bimberg Cathodoluminescence in microporous Si
 Proc. 21st Int. Conf. on the Physics of Semiconductors (ICPS-21), (Beijing, China, 1992) 1992, p. 1487 (World Scientific, Singapore), P. Jiang, H.-Z. Zheng, eds. 34 K. Streubel, V. Härle, F. Scholz, M. Bode, M. Grundmann Interfacial Properties of very thin GaInAs/InP Quantum Wells Structures grown by Metalorganic Vapor Phase Epitaxy
 J. Appl. Phys. 1992, 71(7), 3300-3306 [ | | IF: 2.21 ] 33 A. Krost, M. Grundmann, D. Bimberg, H. Cerva InP on patterned Si(001): Defect Reduction by Application of the Necking Mechanism
 J. Cryst. Growth 1992, 124(1-4), 207-212 [ | | IF: 1.552 ] 32 M. Grundmann, A. Krost, D. Bimberg, H. Cerva InGaAs/InP Quantum Wells on vicinal Si(001): Structural and Optical Properties
 J. Vac. Sci. Technol. B 1992, 10(4), 1840-1843 [ | | IF: 1.267 ] 31 E.H. Böttcher, N. Kirstaedter, M. Grundmann, D. Bimberg, R. Zimmermann, C. Harder, H.P. Meier Nonspectroscopic Approach to the Determination of the Chemical Potential and Bandgap Renormalization
 Phys. Rev. B 1992, 45(15), 8535-8541 [ | | IF: 3.767 ] 30 J. Christen, E. Kapon, M. Grundmann, D. M. Hwang, M. Joschko, D. Bimberg 1D Charge Carrier Dynamics in GaAs Quantum Wires
 Phys. Status Solidi B 1992, 173(1), 307-321 [ | | IF: 1.522 ] 29 E. Kapon, M. Walther, J. Christen, M. Grundmann, C. Caneau, D.M. Hwang, E. Colas, R. Bhat, G.H. Song, D. Bimberg Quantum Wire Heterostructures for Optoelectronic Applications
 Superlatt. Microstr. 1992, 12(4), 491-499 [ | | IF: 1.564 ] 28 M. Grundmann, A. Krost, D. Bimberg Crystallographic and Optical Properties of InP/Si (001) Grown by Low Temperature MOCVD Process
 Surf. Sci. 1992, 267(1-3), 47-49 [ | | IF: 1.838 ] 27 J. Christen, E. Kapon, E. Colas, D.M. Hwang, L.M. Schiavone, M. Grundmann, D. Bimberg Cathodoluminescence Investigation of Lateral Carrier Confinement in GaAs/AlGaAs Quantum Wires Grown by OMCVD on Non-planar Substrates
 Surf. Sci. 1992, 267(1-3), 257-262 [ | | IF: 1.838 ] 26 E. Kapon, M. Walther, J. Christen, M. Grundmann, D.M. Hwang, E. Colas, D. Bimberg Optical Properties of Semiconductor Quantum Wires Grown on Nonplanar Substrates
 Springer Series in Solid State Sciences 1992, 111, 300-310, G. Bauer, F. Kuchar, H. Heinrich, eds. (Springer, Berlin, 1992), ISBN 978-3-642-84857-5 [ | link | ] 25 M. Grundmann, A. Krost, D. Bimberg, O. Ehrmann Local Epitaxy of Inp on V-Grooved Si 6th Int. Conf. Metalorganic Vapor Phase Epitaxy 1992, p. 17-18 [ | ] 24 D. Bimberg, M. Grundmann, J. Christen Characterization of Strained Heterostructures by Cathodoluminescence
 AIP Conf. Proc. 1991, 227(1), 68-71 (AIP Publishing LLC, New York) [ | ] 23 M. Grundmann, A. Krost, D. Bimberg Low Temperature Metal Organic Chemical Vapor Deposition of InP on Si (001)
 Appl. Phys. Lett. 1991, 58(3), 284-286 [ | | IF: 3.794 ] 22 M. Grundmann, J. Christen, D. Bimberg, A. Hashimoto, T. Fukunaga, N. Watanabe Direct Imaging of Si Incorporation in GaAs Masklessly Grown on Patterned Si Substrates
 Appl. Phys. Lett. 1991, 58(19), 2090-2092 [retracted] [ | | IF: 3.794 ] 21 M. Grundmann, A. Krost, D. Bimberg Antiphase Domain Free InP on Si (001): Optimization of MOCVD Process
 J. Cryst. Growth 1991, 115(1-4), 150-153 [ | | IF: 1.552 ] 20 J. Böhrer, M. Grundmann, U. Lienert, D. Bimberg, M. Kamada, N. Watanabe Determination of the band discontinuity of MOCVD grown InGaAs/InAlAs Heterostructures with Optical and Structural Methods
 J. Cryst. Growth 1991, 107(1-4), 555-560 [ | | IF: 1.552 ] 19 M. Grundmann, A. Krost, D. Bimberg LP-MOVPE Growth of Antiphase Domain Free InP on (001) Si using Low Temperature Processing
 J. Cryst. Growth 1991, 107(1-4), 494-495 [ | | IF: 1.552 ] 18 J. Christen, M. Grundmann, D. Bimberg Scanning Cathodoluminescence Microscopy: A Unique Approach to Atomic Scale Characterization of HeteroInterfaces and Imaging of Semiconductor Inhomogeneities
 J. Vac. Sci. Technol. B 1991, 9(4), 2358-2368 [ | | IF: 1.267 ] 17 M. Grundmann, A. Krost, D. Bimberg Observation of the First Order Phase Transition from Single to Double Stepped Si (001) in Metalorganic Chemical Vapor Deposition of InP on Si
 J. Vac. Sci. Technol. B 1991, 9(4), 2158-2166 [ | | IF: 1.267 ] 16 Marius Grundmann, Jürgen Christen, Dieter Bimberg Cathodoluminescence of Strained Quantum Wells and Layers
 Superlatt. Microstr. 1991, 9(1), 65-75 [ | | IF: 1.564 ] 15 M. Grundmann Heteroepitaxie von InP auf Si (001) Dissertation (Technische Universität Berlin, 1991) [ link ] 14 K. Streubel, F. Scholz, V. Härle, M. Bode, M. Grundmann, J. Christen, D. Bimberg Determination of the interface structure of very thin GaInAs/InP quantum wells Proc. 3rd Int. Conf. Indium Phosphide and Related Materials 1991, p. 468-471 [ | ] 13 M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller Erratum: Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells [Appl. Phys. Lett. 55, 1765 (1989)]
 Appl. Phys. Lett. 1990, 57(19), 2034 (1 page) [ | | IF: 3.794 ] 12 M. Grundmann, U. Lienert, D. Bimberg, B. Sievers, F. R. Keßler, A. FischerColbrie, J.N. Miller Orthorhombic Crystal Symmetry in Partially Relaxed In0.23Ga0.77As/GaAs Quantum Wells: Impact on Valence Band Structure and Optical Anisotropy
 Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) (Thessaloniki, Greece, 1990) 1990, 2, 945 (World Scientific, Singapore), E.M. Anastassakis, J.D. Koannopoulos, eds. [ ] 11 E.H. Böttcher, N. Kirstaedter, M. Grundmann, D. Bimberg, C. Harder, M. Meier Band-Gap Renormalization in undoped GaAs/AlGaAs Quantum Wells Determined by a Non-Spectroscopic Method
 Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) (Thessaloniki, Greece, 1990) 1990, 1, 371 (World Scientific, Singapore), E.M. Anastassakis, J.D. Koannopoulos, eds. [ ] 10 J. Christen, M. Grundmann, D. Bimberg, A. Hashimoto, T. Fukunaga, N. Watanabe Direct Imaging of Lateral Bandgap Variation in GaAs on V grooved Si
 Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) (Thessaloniki, Greece, 1990) 1990, 1, 272 (World Scientific, Singapore), E.M. Anastassakis, J.D. Koannopoulos, eds. [ ] 9 D.B. Tran Thoai, R. Zimmermann, M. Grundmann, D. Bimberg Image Charges in Semiconductor Quantum Wells: Effect on Exciton Binding Energy
 Phys. Rev. B 1990, 42(9), 5906-5909 [ | | IF: 3.767 ] 8 M. Grundmann, D. Bimberg, A. Fischer-Colbrie, J.N. Miller Recombination Dynamics in Pseudomorphic and Partially Relaxed In0.23Ga0.77As/GaAs Quantum Wells
 Phys. Rev. B 1990, 41(14), 10120-10123 [ | | IF: 3.767 ] 7 M. Grundmann, U. Lienert, J. Christen, D. Bimberg, A. Fischer-Colbrie, J.N. Miller Pseudomorphic In0.23Ga0.77As/GaAs Quantum Wells: Correlation of Anisotropic Lattice Relaxation and Degradation of Optical Properties
 Springer Series in Solid State Sciences 1990, 97, 304-312, F. Kuchar, H. Heinrich, G. Bauer, eds. (Springer, Berlin, 1990), ISBN 978-3-642-84274-0 [ | link ] 6 M. Grundmann, J. Christen, D. Bimberg Cathodoluminescence Imaging of Defects at Semiconductor Surfaces and Interfaces Defect Control in Semiconductors 1990, 2, 1203-1211, K. Sumino, ed. (North-Holland, Amsterdam, 1990) [ | ] 5 M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller Anisotropic and Inhomogeneous Strain Relaxation in Pseudomorphic In0.23Ga0.77As/GaAs Quantum Wells
 Appl. Phys. Lett. 1989, 55(17), 1765-1767 [ | | IF: 3.794 ] 4 J. Christen, M. Grundmann, D. Bimberg Direct Imaging and Theoretical Modelling of the Atomistic Morphological and Chemical Structure of Semiconductor Heterointerfaces
 Appl. Surf. Sci. 1989, 41/42, 329-336 [ | | IF: 2.112 ] 3 M. Grundmann, J. Christen, D. Bimberg, A. Fischer-Colbrie, R. Hull Misfit Dislocations in Pseudomorphic In0.23Ga0.77As/GaAs Quantum Wells: Influence on Lifetime and Diffusion of Excess Excitons
 J. Appl. Phys. 1989, 66(5), 2214-2216 [ | | IF: 2.21 ] 2 M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller Dislocation Induced Anisotropies of the Structural and Optical Properties of Pseudomorphic InGaAs/GaAs Quantum Wells Inst. Phys. Conf. Ser. 1989, 106, 453-458, T. Ikoma, H. Watanabe, eds. [ ] 1 M. Grundmann, D. Bimberg Anisotropy Effects on Excitonic Properties in Realistic Quantum Wells
 Phys. Rev. B 1988, 38(18), 13486-13489 [ | | IF: 3.767 ] |