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Hirsch index (based on Publons)
h=77 (10/2024, 864 publ., 28854 cit.)
Hirsch index (based on Google Scholar)
h=94 (10/2024, 47960 cit., last 5y: h=49, 5 most quoted: 4639, 1585, 1505, 1491, 1151)
  Publons/ResearcherID
  ORCID iD

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951
Sebastian Henn, Marius Grundmann, Chris Sturm
Characterisation of dielectric diffraction gratings by spectroscopic ellipsometry

J. Appl. Phys. 136(7), 073101:1-7 (2024)
[ | | IF: 2.21 ]

950
Michael S. Bar, Daniel Splith, Yang Chen, Marius Grundmann, Holger von Wenckstern, Tomáš Rauch, Steffen Blaurock, Harald Krautscheid
Deconvolution of light- and heavy-hole contributions to temperature-dependent Hall effect measurements in zincblende copper iodide

Phys. Rev. Appl. 22(4), 044027:1-8 (2024)
[ | | IF: 4.808 ]

949
S. Vogt, C. Petersen, H. von Wenckstern, M. Grundmann, T. Schultz, N. Koch
Zr doping in pulsed laser deposited α-Ga₂O₃ for device applications

Phys. Rev. Appl. 21(6), 064016:1-8 (2024)
[ | | IF: 4.808 ]

948
Christiane Dethloff, Katrin Thieme, Susanne Selle, Michael Seifert, Sofie Vogt, Daniel Splith, Silvana Botti, Marius Grundmann, Michael Lorenz
Ni-Alloyed Copper Iodide Thin Films: Microstructural Features and Functional Performance

Phys. Status Solidi B 261(3), 2300492:1-11 (2024)
[ | | IF: 1.522 ]

947
Sebastian Henn, Gregor Dornberg, Andreas Müller, Carsten Bundesmann, Frank Frost, Chris Sturm, Marius Grundmann
Optical and structural characterization of ZnO thin films upon ion beam assisted smoothing

Thin Solid Films 794, 140290:1-8 (2024)
[ | | IF: 1.604 ]

946
A. Jörns, H. von Wenckstern, and M. Grundmann
Demonstration of Two Multi-component Target Ablation Approaches and Their Application in Combinatorial Pulsed Laser Deposition
Adv. Phys. Res. 3(5), 2300140:1-8 (2024)
[ | ]

945
M. Grundmann
Quantum devices of reduced dimensionality
 
Encyclopedia of Condensed Matter Physics (2nd edition) 3, 529-533 (2024), T. Chakraborty, ed. (Elsevier, Oxford, 2024), ISBN 978-0-323-91408-6
[ | ]

944
Thorsten Schultz, Max Kneiß, Philipp Storm, Daniel Splith, Holger von Wenckstern, Christoph T. Koch, Adnan Hammud, Marius Grundmann, Norbert Koch
Growth of κ-([Al,In]_xGa_1-x)₂O₃ Quantum Wells and their Potential for Quantum Well Infrared Photodetectors

ACS Appl. Mater. Interfaces 15(24), 29535-29541 (2023)
[ | | IF: 7.504 ]

943
Fabian Schöppach, Daniel Splith, Holger von Wenckstern, Marius Grundmann
Oxygen Plasma Treatment to Enable Indium Oxide MESFET Devices

Adv. Electron. Mater. 9(11), 2300291:1-7 (2023)
[ | | IF: 6.312 ]

942
Fangjuan Geng, Liangjun Wang, Tillmann Stralka, Daniel Splith, Siyuan Ruan, Jialin Yang, Lei Yang, Gang Gao, Liangge Xu, Michael Lorenz, Marius Grundmann, Jiaqi Zhu, Chang Yang
(111)-oriented growth and acceptor doping of transparent conductive CuI:S thin films by spin coating and RF-sputtering

Adv. Engin. Mater. 25(11), 2201666:1-5 (2023)
[ | | IF: 3.862 ]

941
Evgeny Krüger, Michael Seifert, Volker Gottschalch, Harald Krautscheid, Claudia S. Schnohr, Silvana Botti, Marius Grundmann, Chris Sturm
Optical properties of Ag_xCu_1–xI alloy thin films

AIP Adv. 13(3), 035117:1-11 (2023)
[ | | IF: 1.444 ]

940
Jon Borgersen, Robert Karsthof, Vegard Rønning, Lasse Vines, Holger von Wenckstern, Marius Grundmann, Andrej Yu. Kuznetsov, Klaus Magnus Johansen
Origin of enhanced conductivity in low dose ion irradiated oxides

AIP Adv. 13(1), 015211:1-5 (2023)
[ | | IF: 1.444 ]

939
Andreas Müller, Sebastian Henn, Evgeny Krüger, Steffen Blaurock, Harald Krautscheid, Marius Grundmann, Chris Sturm
Two- and three-photon absorption in bulk CuI

Appl. Phys. Lett. 123(12), 122103:1-5 (2023)
[ | | IF: 3.794 ]

938
Sijun Luo, Lukas Trefflich, Susanne Selle, Ron Hildebrandt, Evgeny Krüger, Stefan Lange, Jingjing Yu, Chris Sturm, Michael Lorenz, Holger von Wenckstern, Christian Hagendorf, Thomas Höche, Marius Grundmann
Ultrawide Bandgap Willemite-Type Zn₂GeO₄ Epitaxial Thin Films

Appl. Phys. Lett. 122(3), 031601:1-7 (2023)
[ | | IF: 3.794 ]

937
Clemens Petersen, Sofie Vogt, Max Kneiß, Holger von Wenckstern, Marius Grundmann
PLD of α-Ga₂O₃ on m-plane Al₂O₃: Growth regime, growth process, and structural properties

APL Mater. 11(6), 061122:1-8 (2023)
[ | | IF: 4.323 ]

936
Ron Hildebrandt, Michael Seifert, Janine George, Steffen Blaurock, Silvana Botti, Harald Krautscheid, Marius Grundmann, Chris Sturm
Temperature dependent second-order Raman scattering in CuI

arxiv: 2305.18931 (2023)
[ | ]

935
J.K. Jochum, M. Lorenz, H.P. Gunnlaugsson, C. Patzig, T. Höche, M. Grundmann, A. Vantomme, K. Temst, M.J. Van Bael, V. Lazenka
Impact of magnetization and hyperfine field distribution on high magnetoelectric coupling strength in BaTiO₃-BiFeO₃ multilayers

arxiv: 2303.08493 (2023)
[ | ]

934
Amanda Langørgen, Ymir Kalmann Frodason, Robert Karsthof, Holger von Wenckstern, Ingvild Julie Thue Jensen, Lasse Vines, Marius Grundmann
Defect level in κ-Ga₂O₃ revealed by thermal admittance spectroscopy

J. Appl. Phys. 134(1), 015701:1-6 (2023)
[ | | IF: 2.21 ]

933
S. Köpp, C. Petersen, D. Splith, M. Grundmann, H. von Wenckstern
Properties of Schottky barrier diodes on heteroeptixial α-Ga₂O₃ thin films

J. Vac. Sci. Technol. A 41(4), 043411:1-9 (2023) [Editor's Pick]
[ | | IF: 1.432 ]

932
Laurenz Thyen, Daniel Splith, Max Kneiß, Marius Grundmann, Holger von Wenckstern
Masked-assisted radial-segmented target pulsed-laser deposition: A Novel Method for Area-Selective Deposition using Pulsed-Laser Deposition

J. Vac. Sci. Technol. A 41(2), 020801:1-5 (2023) [Editor's Pick]
[ | | IF: 1.432 ]

931
R. Hildebrandt, M. Seifert, J. George, S. Blaurock, S. Botti, H. Krautscheid, M. Grundmann, C. Sturm
Determination of acoustic phonon anharmonicities via second-order Raman scattering in CuI

New J. Phys. 25(12), 123022:1-11 (2023)
[ | | IF: 4.063 ]

930
S. Montag, D. Splith, M. Kneiß, M. Grundmann, J. Garcia Fernandez, Ø. Prytz, H. von Wenckstern
Cation segregation observed in an (In,Ga)₂O₃ material thin film library beyond the miscibility limit of the bixbyite structure

Phys. Rev. Mater. 7(9), 094603:1-9 (2023)
[ | ]

929
Tillmann Stralka, Michael Bar, Fabian Schöppach, Susanne Selle, Chang Yang, Holger von Wenckstern, Marius Grundmann
Grain and grain boundary conduction channels in copper iodide thin films

Phys. Status Solidi A 220(6), 2200883:1-8 (2023)
[ | | IF: 1.648 ]

928
Sofie Vogt, Clemens Petersen, Max Kneiß, Daniel Splith, Thorsten Schultz, Holger von Wenckstern, Norbert Koch, Marius Grundmann
Realization of conductive n-type doped α-Ga₂O₃ on m-plane sapphire grown by a two step pulsed laser deposition process

Phys. Status Solidi A 220(3), 2200721:1-6 (2023)
[ | | IF: 1.648 ]

927
Eva M. Zollner, Susanne Selle, Chang Yang, Konrad Ritter, Stefanie Eckner, Edmund Welter, Marius Grundmann, Claudia S. Schnohr
Oxygen-induced phase separation in sputtered Cu-Sn-I-O thin films

Phys. Status Solidi A 220(5), 2200646:1-10 (2023)
[ | | IF: 1.648 ]

926
Marius Grundmann
Space Charge Region Beyond the Abrupt Approximation

Phys. Status Solidi B 260(11), 2300257:1-4 (2023)
[ | | IF: 1.522 ]

925
Evgeny Krüger, Volker Gottschalch, Gabriele Benndorf, Ron Hildebrandt, Ana Lucía Pereira Brenes, Steffen Blaurock, Michael Bar, Stefan Merker, Chris Sturm, Marius Grundmann, Harald Krautscheid
Epitaxial growth of Ag_xCu_1–xI on Al₂O₃(0001)
 
Phys. Status Solidi B 260(2), 2200493:1-8 (2023)
[ | | extra | IF: 1.522 ]

924
Apoorva Sharma, Oana T. Ciubotariu, Patrick Matthes, Shun Okano, Vitaly Zviagin, Jana Kalbáčová, Sibylle Gemming, Cameliu Himcinschi, Marius Grundmann, Dietrich R.T. Zahn, Manfred Albrecht, Georgeta Salvan
Optical and magneto-optical properties of pulsed laser-deposited thulium iron garnet thin films
Appl. Res. 3(2), e202200064:1-11 (2023)
[ | ]

923
Marius Grundmann
Thin Film Electronics from Amorphous Oxide and Halogen Semiconductors
 
BuildMoNa Annual Report 2021, p. 27-29 (2023)
[ | link ]

922
Michael Lorenz, Philipp Storm, Stephan Gierth, Susanne Selle, Holger von Wenckstern, Marius Grundmann
Diffundierter Sauerstoff als dominierender flacher Akzeptor in p-Typ Kupferiodid-Dünnfilmen
Chemie Ingenieur Technik 95(11), 1786-1793 (2023)
[ | ]

921
Bernd Burchard, Jan Meijer, Marius Grundmann
Trägermaterial zur Montage von Diamant-Nanokristallen mit NV-Farbzentren in CMOS- Schaltkreisen mittels Gelatine
 
DE102019121029B4 (Deutsches Patent- und Markenamt, München, 2023)
[ ]

920
Fangjuan Geng, Yu-Ning Wu, Daniel Splith, Liangjun Wang, Xiaowan Kang, Shanshan Liang, Lei Yang, Michael Lorenz, Marius Grundmann, Jiaqi Zhu, Chang Yang
Amorphous Transparent Cu(S,I) Thin Films with Very High Hole Conductivity
J. Phys. Chem. Lett. 14(26), 6163-6169 (2023)
[ link | ]

919
Michael Lorenz, Holger Hochmuth, Holger von Wenckstern, Marius Grundmann
Flexible hardware concept of pulsed laser deposition for large areas and combinatorial composition spreads
Rev. Sci. Instrum. 94(8), 083905:1-12 (2023)
[ | ]

918
Marius Grundmann
DEVICE FOR CONDUCTING RADIATION, A PHOTODETECTOR ARRANGEMENT, AND A METHOD FOR SPATIALLY RESOLVED SPECTRAL ANALYSIS
US 11,543,346 B2 (United States Patent, 2023)
[ ]

917
Philipp Storm, Khanim Karimova, Michael Sebastian Bar, Susanne Selle, Holger von Wenckstern, Marius Grundmann, Michael Lorenz
Suppression of Rotational Domains of CuI employing Sodium Halide Buffer Layers

ACS Appl. Mater. Interfaces 14(10), 12350-12358 (2022)
[ | | IF: 7.504 ]

916
Robert Karsthof, Ymir Kalmann Frodason, Augustinas Galeckas, Philip Michael Weiser, Vitaly Zviagin, Marius Grundmann
Light absorption and emission by defects in doped nickel oxide

Adv. Phot. Res. 3(11), 202200138:1-10 (2022)
[ | | IF: 1.9 ]

915
Tanja Jawinski, Chris Sturm, Roland Clausing, Heiko Kempa, Marius Grundmann, Roland Scheer, Holger von Wenckstern
Highly crystalline In₂S₃ thin films epitaxially grown on sapphire substrates

AIP Adv. 12(12), 125215:1-9 (2022) [Featured Article]
[ | | IF: 1.444 ]

914
Mao Wang, Ye Yu, Slawomir Prucnal, Yonder Berencén, Mohd Saif Shaikh, Lars Rebohle, Muhammad Bilal Khan, Vitaly Zviagin, René Hübner, Alexej Pashkin, Artur Erbe, Yordan M. Georgiev, Marius Grundmann, Manfred Helm, Robert Kirchner, Shengqiang Zhou
Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon

arxiv: 2210.03373 (2022)
[ | ]

913
Michael Seifert, Evgeny Krüger, Michael S. Bar, Stefan Merker, Holger von Wenckstern, Harald Krautscheid, Marius Grundmann, Chris Sturm, Silvana Botti
Dielectric function of CuBr_xI_1−x alloy thin films

arxiv: 2207.01344 (2022)
[ | ]

912
Robert Karsthof, Ymir Kalmann Frodason, Augustinas Galeckas, Philip Michael Weiser, Vitaly Zviagin, Marius Grundmann
Light absorption and emission by defects in doped nickel oxide

arxiv: 2205.02606 (2022)
[ | ]

911
Xinyi Xia, Nahid Sultan Al-Mamun, Chaker Fares, Aman Haque, Fan Ren, Anna Hassa, Holger von Wenckstern, Marius Grundmann, S.J. Pearton
Band Alignment of Al₂O₃ on α-(Al_xGa_1-x)₂O₃

ECS J. Solid State Sci. Techn. 11(2), 025006:1-8 (2022)
[ | | IF: 1.808 ]

910
Philipp Storm, Susanne Selle, Holger von Wenckstern, Marius Grundmann, Michael Lorenz
Epitaxial lift-off of single crystalline CuI thin films

J. Phys. Chem. C 10(11), 4124-4127 (2022)
[ | | IF: 4.814 ]

909
Thomas Ruf, Stefan Merker, Frank Syrowatka, Philip Trempler, Georg Schmidt, Michael Lorenz, Marius Grundmann, Reinhard Denecke
Preferential growth of perovskite BaTiO₃ thin films on Gd₃Ga₅O₁₂(100) and Y₃Fe₅O₁₂(100) oriented substrates by pulsed laser deposition

Mater. Adv. 3(12), 4920-4931 (2022)
[ | ]

908
Mao Wang, Ye Yu, Slawomir Prucnal, Yonder Berencén, Mohd Saif Shaikh, Lars Rebohle, Muhammad Bilal Khan, Vitaly Zviagin, René Hübner, Alexej Pashkin, Artur Erbe, Yordan M. Georgiev, Marius Grundmann, Manfred Helm, Robert Kirchner, Shengqiang Zhou
Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon

Nanoscale 14(7), 2826-2836 (2022)
[ | | IF: 7.394 ]

907
A. Welk, A. Reinhardt, D. Splith, H. von Wenckstern, M. Grundmann, O. Herrfurth
Analysis of an extended percolation-based random band-edge model applied to the amorphous oxide semiconductors: multi-anionic zinc oxynitride, multi-cationic zinc tin oxide and multinary zinc magnesium oxynitride

Phys. Rev. Appl. 17(2), 024007:1-14 (2022)
[ | | IF: 4.808 ]

906
Michael Seifert, Evgeny Krüger, Michael S. Bar, Stefan Merker, Holger von Wenckstern, Harald Krautscheid, Marius Grundmann, Chris Sturm, Silvana Botti
Dielectric function of CuBr_xI_1–x alloy thin films

Phys. Rev. Mater. 6(12), 124601:1-11 (2022)
[ | ]

905
K. Dorywalski, O. Lupicka, M. Grundmann, C. Sturm
Combination of a global-search method with model selection criteria for the ellipsometric data evaluation of DLC coatings
Adv. Opt. Technol. 11(5-6), 173-178 (2022)
[ | ]

904
Marius Grundmann
Amorphous oxide semiconductors for integrated devices
 
BuildMoNa Annual Report 2020, p. 27-31 (2022)
[ | link ]

903
Marius Grundmann
The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 4th edition
 
(Springer Nature, Cham, 2021), ISBN 978-3-030-51568-3
[ link | ]

902
Jack E.N. Swallow, Robert G. Palgrave, Philip A.E. Murgatroyd, Anna Regoutz, Michael Lorenz, Anna Hassa, Marius Grundmann, Holger von Wenckstern, Joel B. Varley, Tim D. Veal
Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

ACS Appl. Mater. Interfaces 13(2), 2807-2819 (2021)
[ | | IF: 7.504 ]

901
Anna Reinhardt, Holger von Wenckstern, Marius Grundmann
All-amorphous Junction Field-Effect Transistors Based on High-Mobility Zinc Oxynitride

Adv. Electron. Mater. 7(4), 2000883:1-6 (2021)
[ | | IF: 6.312 ]

900
R. Hildebrandt, C. Sturm, M. Grundmann, M. Wieneke, A. Dadgar
Raman tensor determination of transparent uniaxial crystals and their thin films - a-plane GaN as exemplary case

Appl. Phys. Lett. 119(12), 121109:1-5 (2021)
[ | | IF: 3.794 ]

899
Evgeny Krüger, Michael S. Bar, Steffen Blaurock, Lukas Trefflich, Ron Hildebrandt, Andreas Müller, Oliver Herrfurth, Gabriele Benndorf, Holger von Wenckstern, Harald Krautscheid, Marius Grundmann, Chris Sturm
Dynamics of exciton-polariton emission in CuI

APL Mater. 9(12), 121102:1-12 (2021)
[ | | IF: 4.323 ]

898
P. Storm, S. Gierth, S. Selle, M.S. Bar, H. von Wenckstern, M. Grundmann, M. Lorenz
Evidence for oxygen being a dominant shallow acceptor in p-type CuI

APL Mater. 9(5), 051101:1-9 (2021)
[ | | IF: 4.323 ]

897
A. Welk, A. Reinhardt, O. Herrfurth, T. Schultz, H. von Wenckstern, N. Koch, M. Grundmann
Tuning material properties of amorphous zinc oxynitride thin films by magnesium cationic substitution

APL Mater. 9(2), 021120:1-8 (2021)
[ | | IF: 4.323 ]

896
Xinyi Xia, Chaker Fares, Fan Ren, Anna Hassa, Holger von Wenckstern, Marius Grundmann, S.J. Pearton
Al Composition Dependence of Band Offsets for SiO₂ on α-(Al_xGa_1-x)₂O₃

ECS J. Solid State Sci. Techn. 10(11), 113007:1-8 (2021)
[ | | IF: 1.808 ]

895
Oliver Lahr, Max Steudel, Holger von Wenckstern, Marius Grundmann
Mechanical Stress Stability of Amorphous Zinc Tin Oxide Thin-Film Transistors

Front. Electron. 2, 797308:1-7 (2021)
[ | ]

894
Jon Borgersen, Klaus Magnus Johansen, Lasse Vines, Holger von Wenckstern, Marius Grundmann, Andrej Yu. Kuznetsov
Fermi level controlled point defect balance in ion irradiated indium oxide

J. Appl. Phys. 130(8), 085703:1-6 (2021)
[ | | IF: 2.21 ]

893
M. Kneiß, D. Splith, P. Schlupp, A. Hassa, H. von Wenckstern, M. Lorenz, M. Grundmann
Realization of Highly Rectifying Schottky Barrier Diodes and pn Heterojunctions on κ-Ga₂O₃ by Overcoming the Conductivity Anisotropy

J. Appl. Phys. 130(8), 084502:1-14 (2021)
[ | | IF: 2.21 ]

892
P. John, M. Al Khalfioui, C. Deparis, A. Welk, C. Lichtensteiger, R. Bachelet, G. Saint-Girons, M. Hugues, M. Grundmann, J. Zúñiga-Pérez
Epitaxial Zn₃N₂ thin films by molecular beam epitaxy: Structural, electrical and optical properties

J. Appl. Phys. 130(6), 065104:1-11 (2021)
[ | | IF: 2.21 ]

891
Volker Gottschalch, Gabriele Benndorf, Susanne Selle, Evgeny Krüger, Steffen Blaurock, Max Kneiß, Michael Bar, Chris Sturm, Stefan Merker, Thomas Höche, Marius Grundmann, Harald Krautscheid
Epitaxial growth of rhombohedral β- and cubic γ-CuI

J. Cryst. Growth 570, 126218 (2021)
[ | | IF: 1.552 ]

890
M. Kneiß, D. Splith, H. von Wenckstern, M. Lorenz, T. Schultz, N. Koch, M. Grundmann
Strain States and Relaxation for α-(Al_xGa_1−x)₂O₃ Thin Films on Prismatic Planes of α-Al₂O₃ in the Full Composition Range: Fundamental Difference of a- and m-Epitaxial Planes in the Manifestation of Shear Strain and Lattice Tilt

J. Mat. Res. 36(23), 4816-4831 (2021)
[ | | IF: 1.713 ]

889
Oliver Herrfurth, Evgeny Krüger, Steffen Blaurock, Harald Krautscheid, Marius Grundmann
Hot-phonon effects in photo-excited wide-bandgap semiconductors

J. Phys.: Condens. Matter 33(20), 205701:1-9 (2021)
[ | | IF: 2.721 ]

888
A. Hassa, M. Grundmann, H. von Wenckstern
Progression of Group-III Sesquioxides: Epitaxy, Solubility and Desorption

J. Phys. D: Appl. Phys. 54(22), 223001:1-15 (2021)
[ | | IF: 2.772 ]

887
Marius Grundmann, Tillmann Stralka, Michael Lorenz, Susanne Selle, Christian Patzig, Thomas Höche
Plastic strain relaxation and alloy instability in epitaxial corundum-phase (Al,Ga)₂O₃ thin films on r-plane Al₂O₃

Mater. Adv. 2(13), 4316-4322 (2021)
[ | ]

886
S. Henn, M. Grundmann, C. Sturm
Strong coupling of Bloch surface waves and excitons in ZnO up to 430 K

New J. Phys. 23(9), 093031:1-10 (2021)
[ | | IF: 4.063 ]

885
Marius Grundmann, Chris Sturm
Angular position of singular optic axes for arbitrary dielectric tensors

Phys. Rev. A 103(5), 053510:1-6 (2021)
[ | | IF: 3.042 ]

884
O. Herrfurth, S. Richter, M. Rebarz, S. Espinoza, J. Zúñiga-Pérez, C. Deparis, J. Leveillee, A. Schleife, M. Grundmann, J. Andreasson, R. Schmidt-Grund
Transient birefringence and dichroism in ZnO studied with fs-time-resolved spectroscopic ellipsometry

Phys. Rev. Res. 3(1), 013246:1-12 (2021)
[ | ]

883
Daniel Splith, Stefan Müller, Holger von Wenckstern, Marius Grundmann
Numerical modeling of Schottky barrier diode characteristics

Phys. Status Solidi A 218(12), 202100121:1-13 (2021)
[ | | IF: 1.648 ]

882
M. Grundmann, M. Lorenz
Azimuthal anisotropy of rhombohedral (corundum-phase) heterostructures

Phys. Status Solidi B 258(7), 202100104:1-5 (2021)
[ | | IF: 1.522 ]

881
M. Kneiß, P. Storm, A. Hassa, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann
Epitaxial Growth of κ-(Al_xGa_1−x)₂O₃ Layers and Superlattice Heterostructures up to x=0.48 on Highly Conductive Al-doped ZnO Thin Film Templates by Pulsed Laser Deposition

Phys. Status Solidi B 258(2), 202000359:1-10 (2021)
[ | | IF: 1.522 ]

880
Anna Hassa, Philipp Storm, Max Kneiß, Daniel Splith, Holger von Wenckstern, Michael Lorenz, Marius Grundmann
Correction to: Structural and elastic properties of α-(Al_xGa_1−x)₂O₃ thin films on (11.0) Al₂O₃ substrates for the entire composition range

Phys. Status Solidi B 258(2), 2000632 (1 page) (2021)
[ | | IF: 1.522 ]

879
Anna Hassa, Philipp Storm, Max Kneiß, Daniel Splith, Holger von Wenckstern, Michael Lorenz, Marius Grundmann
Structural and elastic properties of α-(Al_xGa_1−x)₂O₃ thin films on (11.0) Al₂O₃ substrates for the entire composition range

Phys. Status Solidi B 258(2), 2000394:1-10 (2021)
[ | | IF: 1.522 ]

878
Philipp Storm, Michael Sebastian Bar, Susanne Selle, Holger von Wenckstern, Marius Grundmann, Michael Lorenz
P-Type Doping and Alloying of CuI Thin Films with Selenium

Phys. Status Solidi RRL 15(8), 202100214:1-6 (2021)
[ | | IF: 2.58 ]

877
Wenlei Yu, Gabriele Benndorf, Yunfeng Jiang, Kai Jiang, Chang Yang, Michael Lorenz, Marius Grundmann
Control of optical absorption and emission of sputtered copper iodide thin films

Phys. Status Solidi RRL 15(1), 2000431:1-5 (2021)
[ | | IF: 2.58 ]

876
Marius Grundmann
Combinatorial acceleration of material research
 
BuildMoNa Annual Report 2019, p. 26-28 (2021)
[ | link ]

875
Thorsten Schultz, Max Kneiß, Philipp Storm, Daniel Splith, Holger von Wenckstern, Marius Grundmann, Norbert Koch
Band offsets at κ-([Al,In]_xGa_1-x)₂O₃/MgO interfaces

ACS Appl. Mater. Interfaces 12(7), 8879-8885 (2020)
[ | | IF: 7.504 ]

874
Oliver Lahr, Michael Bar, Holger von Wenckstern, Marius Grundmann
All-oxide transparent thin-film transistors based on amorphous zinc-tin-oxide fabricated at room temperature: Approaching the thermodynamic limit for sub-threshold swing

Adv. Electron. Mater. 6(10), 2000423:1-6 (2020)
[ | | IF: 6.312 ]

873
Anna Reinhardt, Holger von Wenckstern, M. Grundmann
Metal-Semiconductor Field-Effect Transistors Based on the Amorphous Multi-Anion Compound ZnON

Adv. Electron. Mater. 6(4), 1901066:1-5 (2020)
[ | | IF: 6.312 ]

872
Marius Grundmann
Comment on "Stress–strain state in α-Ga₂O₃ epitaxial films on α-Al₂O₃ substrates" [Appl. Phys. Express 13, 075502 (2020)]

Appl. Phys. Expr. 13(8), 089101 (1 page) (2020)
[ | | IF: 2.567 ]

871
Melanie Budde, Daniel Splith, Piero Mazzolini, Abbes Tahraoui, Johannes Feldl, Manfred Ramsteiner, Holger von Wenckstern, Marius Grundmann, Oliver Bierwagen
SnO/β-Ga₂O₃ vertical pn heterojunction diodes

Appl. Phys. Lett. 117(25), 252106:1-6 (2020)
[ | | IF: 3.794 ]

870
M. Grundmann, M. Lorenz
Epitaxial growth and strain relaxation of corundum-phase (Al,Ga)₂O₃ thin films from pulsed laser deposition at 1000°C on r-plane Al₂O₃

Appl. Phys. Lett. 117(24), 242102:1-4 (2020)
[ | | IF: 3.794 ]

869
Marius Grundmann
Universal Relation for the Orientation of Dislocations from Prismatic Glide Systems in Hexagonal and Rhombohedral Strained Heterostructures

Appl. Phys. Lett. 116(8), 082104:1-3 (2020)
[ | | IF: 3.794 ]

868
Robert Karsthof, Holger von Wenckstern, Marius Grundmann
Identification of Li_Ni and V_Ni acceptor levels in doped nickel oxide
 
APL Mater. 8(12), 121106:1-7 (2020) [Featured article]
[ | | extra | IF: 4.323 ]

867
P. Storm, M. Bar, S. Selle, C. Yang, H. von Wenckstern, M. Grundmann, M. Lorenz
High mobility, highly transparent, smooth, p-type CuI thin films grown by pulsed laser deposition

APL Mater. 8(9), 091115:1-8 (2020) [SciLight]
[ | | IF: 4.323 ]

866
Oliver Lahr, Holger von Wenckstern, Marius Grundmann
Ultrahigh-Performance Integrated Inverters Based on Amorphous Zinc-Tin-Oxide Deposited at Room Temperature

APL Mater. 8(9), 091111:1-8 (2020) [Editor's Pick]
[ | | IF: 4.323 ]

865
P. Schlupp, S. Vogt, H. von Wenckstern, M. Grundmann
Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates

APL Mater. 8(6), 061112:1-7 (2020)
[ | | IF: 4.323 ]

864
M. Kneiß, P. Storm, A. Hassa, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann
Growth, Structural and Optical Properties of Coherent κ-(Al_xGa_1-x)₂O₃/κ-Ga₂O₃ Quantum Well Superlattice Heterostructures

APL Mater. 8(5), 051112:1-14 (2020)
[ | | IF: 4.323 ]

863
M. Grundmann, M. Lorenz
Anisotropic Strain Relaxation Through Prismatic and Basal Slip in α-(Al,Ga)₂O₃ on R-Plane Al₂O₃

APL Mater. 8(2), 021108:1-14 (2020)
[ | | IF: 4.323 ]

862
A. Hassa, C. Sturm, M. Kneiß, D. Splith, H. von Wenckstern, T. Schultz, N. Koch, M. Lorenz, M. Grundmann
Solubility Limit and Material Properties of a κ-(Al_xGa_1−x)₂O₃ thin film with a lateral cation gradient on (00.1)Al₂O₃ by tin-assisted PLD

APL Mater. 8(2), 021103:1-7 (2020)
[ | | IF: 4.323 ]

861
Robert Karsthof, Holger von Wenckstern, Marius Grundmann
Identification of Li_Ni and V_Ni acceptor levels in doped nickel oxide

arxiv: 2010.02694 (2020)
[ | link ]

860
Melanie Budde, Daniel Splith, Piero Mazzolini, Abbes Tahraoui, Johannes Feldl, Manfred Ramsteiner, Holger von Wenckstern, Marius Grundmann, Oliver Bierwagen
SnO/β-Ga₂O₃ vertical pn heterojunction diodes

arxiv: 2010.00362 (2020)
[ | link ]

859
C. Wouters, C. Sutton, L. M. Ghiringhelli, T. Markurt, R. Schewski, A. Hassa, H. von Wenckstern, M. Grundmann, M. Scheffler, M. Albrecht
Investigating the ranges of (meta)stable phase formation in (In_xGa_1-x)₂O₃: Impact of the cation coordination

arxiv: 2008.04573 (2020)
[ | link ]

858
Robert Staacke, Roger John, Max Kneiß, Christian Osterkamp, Séverine Diziain, Fedor Jelezko, Marius Grundmann, Jan Meijer
Method of full polarization control of microwave fields in a scalable transparent structure for spin manipulation

J. Appl. Phys. 128(19), 194301:1-9 (2020)
[ | | IF: 2.21 ]

857
V. Zviagin, C. Sturm, P. Esquinazi, M. Grundmann, R. Schmidt-Grund
Control of Magnetic Properties in Spinel ZnFe₂O₄ Thin Films Through Intrinsic Defect Manipulation

J. Appl. Phys. 128(16), 165702:1-7 (2020)
[ | | IF: 2.21 ]

856
Chaker Fares, Minghan Xian, David J. Smith, Martha R. McCartney, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, S.J. Pearton
Changes in band alignment during annealing at 600°C of ALD Al₂O₃ on (In_xGa_1-x)₂O₃ for x=0.25-0.74

J. Appl. Phys. 127(10), 105701:1-8 (2020)
[ | | IF: 2.21 ]

855
Haoming Wei, Chao Yang, Yangqing Wu, Bingqiang Cao, Michael Lorenz, Marius Grundmann
From energy harvesting to topologically insulating behavior: ABO₃–type epitaxial thin films and superlattices

J. Mater. Chem. C 8(44), 15575-15596 (2020)
[ | | IF: 7.059 ]

854
Michitaka Fukumoto, Chang Yang, Wenlei Yu, Christian Patzig, Thomas Höche, Thomas Ruf, Reinhard Denecke, Michael Lorenz, Marius Grundmann
Experimental evidence of wide bandgap in triclinic (001)-oriented Sn₅O₂(PO₄)₂ thin films on Y₂O₃ buffered glass substrates

J. Mater. Chem. C 8(40), 14203-14207 (2020)
[ | | IF: 7.059 ]

853
Jon Borgersen, Lasse Vines, Ymir K. Frodason, Andrej Kuznetsov, Holger von Wenckstern, Marius Grundmann, Martin W. Allen, Jesús Zúñiga-Pérez, Klaus Johansen
Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials

J. Phys.: Condens. Matter 32(50), 415704:1-12 (2020)
[ | | IF: 2.721 ]

852
Anna Hassa, Charlotte Wouters, Max Kneiß, Daniel Splith, Chris Sturm, Holger von Wenckstern, Martin Albrecht, Michael Lorenz, Marius Grundmann
Control of Phase Formation of (Al_xGa_1-x)₂O₃ Thin Films on c-plane Al₂O₃

J. Phys. D: Appl. Phys. 53(48), 485105:1-9 (2020)
[ | | IF: 2.772 ]

851
Stefan Hohenberger, Johanna K. Jochum, Margriet J. Van Bael, Kristiaan Temst, Christian Patzig, Thomas Höche, Michael Lorenz, Marius Grundmann
Enhanced Magnetoelectric Coupling in BaTiO₃-BiFeO₃ Multilayers - An Interface Effect

Materials 13(1), 197:1-14 (2020)
[ | | IF: 2.247 ]

850
Linus Krieg, Zhipeng Zhang, Daniel Splith, Holger von Wenckstern, Marius Grundmann, Xiaoxue Wang, Karen K. Gleason, Tobias Voss
Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition

Nano Express 1(1), 010013:1-7 (2020)
[ | ]

849
Linus Krieg, Florian Meierhofer, Sascha Gorny, Stefan Leis, Daniel Splith, Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann, Xiaoxue Wang, Jana Hartmann, Christoph Margenfeld, Irene Manglano Clavero, Adrian Avramescu, Tilman Schimpke, Dominik Scholz, Hans-Jürgen Lugauer, Martin Strassburg, Jörgen Jungclaus, Steffen Bornemann, Hendrik Spende, Andreas Waag, Karen K. Gleason, Tobias Voss
Towards 3D hybrid inorganic/organic optoelectronics: light emission and electronic transport properties of GaN/oCVD-PEDOT structures

Nature Commun. 11, 5092:1-10 (2020)
[ | | IF: 12.001 ]

848
Marius Grundmann
Topological States of the Diatomic Linear Chain: Effect of Impedance Matching to the Fixed Ends

New J. Phys. 22(8), 083076:1-7 (2020)
[ | | IF: 4.063 ]

847
Steffen Richter, Oliver Herrfurth, Shirly Espinoza, Mateusz Rebarz, Miroslav Kloz, Joshua A. Leveillee, André Schleife, Stefan Zollner, Marius Grundmann, Jakob Andreasson, Rüdiger Schmidt-Grund
Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry

New J. Phys. 22(8), 083066:1-14 (2020)
[ | | IF: 4.063 ]

846
C. Sturm, S. Höfer, K. Hingerl, T.G. Mayerhöfer, M. Grundmann
Dielectric function decomposition by dipole orientation distribution: Application to triclinic K₂Cr₂O₇

New J. Phys. 22(7), 073041:1-11 (2020)
[ | | IF: 4.063 ]

845
C. Sturm, V. Zviagin, M. Grundmann
Dielectric tensor, optical activity and singular optic axes of KTP in the spectral range 0.5-8.4 eV

Phys. Rev. Mater. 4(5), 055203:1-7 (2020)
[ | ]

844
Robert Karsthof, Arthur Markus Anton, Friedrich Kremer, Marius Grundmann
Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium

Phys. Rev. Mater. 4(3), 034601:1-7 (2020)
[ | ]

843
C. Wouters, C. Sutton, L.M. Ghiringhelli, T. Markurt, R. Schewski, A. Hassa, H. von Wenckstern, M. Grundmann, M. Scheffler, M. Albrecht
Investigating the ranges of (meta)stable phase formation in (In_xGa_1-x)₂O₃: Importance of the cation coordination

Phys. Rev. Res. 4(12), 125001:1-10 (2020)
[ | ]

842
Lukas Trefflich, Frank Dissinger, Rüdiger Schmidt-Grund, Chris Sturm, Siegfried R. Waldvogel, Marius Grundmann
Influence of the excitation conditions on the emission behavior of carbon nanodot-based planar microcavities

Phys. Rev. Res. 2(4), 043216:1-6 (2020)
[ | ]

841
Marius Grundmann
Topological States due to Third-Neighbor Coupling in a Diatomic Linear Elastic Chains

Phys. Status Solidi B 257(9), 202000176:1-5 (2020)
[ | | IF: 1.522 ]

840
Marius Grundmann
A Most General and Facile Recipe for the Calculation of Heteroepitaxial Strain

Phys. Status Solidi B 257(12), 2000323:1-5 (2020)
[ | | IF: 1.522 ]

839
Ingrid Mertig, Marius Grundmann, Wolf Widdra
Functionality of Oxide Interfaces
 
Phys. Status Solidi B 257(7), 2000270 (1 page) (2020)
[ | | extra | IF: 1.522 ]

838
Robert Karsthof, Marius Grundmann, Holger von Wenckstern, Jesús Zúñiga-Pérez, Christiane Deparis
Nickel oxide-based heterostructures with large band offsets

Phys. Status Solidi B 257(7), 1900639:1-11 (2020)
[ | | IF: 1.522 ]

837
Vitaly Zviagin, Marius Grundmann, Rüdiger Schmidt-Grund
Impact of Defects on Magnetic Properties of Spinel Zinc Ferrite Thin Films

Phys. Status Solidi B 257(7), 1900630:1-11 (2020)
[ | | IF: 1.522 ]

836
R. Denecke, M. Welke, P. Huth, J. Gräfe, K. Brachwitz, M. Lorenz, M. Grundmann, M. Ziese, P. Esquinazi, E. Goering, G. Schütz, A. Chassé, K.-M. Schindler
Magnetic Anisotropy in Thin Layers of (Mn,Zn)Fe₂O₄ on SrTiO₃(001)

Phys. Status Solidi B 257(7), 1900627:1-8 (2020)
[ | | IF: 1.522 ]

835
H. von Wenckstern, M. Kneiß, P. Storm, M. Grundmann
A review of the segmented-target approach to combinatorial material synthesis by pulsed-laser deposition
 
Phys. Status Solidi B 257(7), 1900626:1-13 (2020)
[ | | IF: 1.522 ]

834
Marius Grundmann
The Principal Axes Systems for the Elastic Properties of Monoclinic Gallia (β-Ga₂O₃)

Sci. Rep. 10, 19486:1-8 (2020)
[ | | IF: 5.578 ]

833
Marius Grundmann
Oxid-Halbleiter mit ultrabreiter Bandlücke: Darstellung mittels kombinatorischer gepulster Laserdeposition und Untersuchung physikalischer Eigenschaften

Vakuum in Forschung und Praxis 32(6), 32-37 (2020)
[ | ]

832
Chang Yang, Eduard Rose, Wenlei Yu, Tillmann Stralka, Fangjuan Geng, Michael Lorenz, Marius Grundmann
Controllable growth of copper iodide by sputtering towards high-mobility thin films and self-assembled microcrystals
ACS Applied Electronic Materials 2(11), 3627-3632 (2020)
[ | ]

831
Marius Grundmann
Building material gradients laterally and vertically - combinatorial acceleration of material research and new device perspectives
 
BuildMoNa Annual Report 2018, p. 20-22 (2020)
[ | link ]

830
Daniel Splith, Peter Schlupp, Holger von Wenckstern, Marius Grundmann
All-oxide pn-heterojunction diodes with β-Ga₂O₃
 
Gallium Oxide: Crystal Growth, Materials Properties, and Devices, p. 689-702 (2020), M. Higashiwaki, S. Fujita, eds. (Springer, Cham, 2020), ISBN 978-3-030-37152-4
[ | | extra ]

829
Holger von Wenckstern, Daniel Splith, Marius Grundmann
Pulsed Laser Deposition of Ga₂O₃ and Related Alloys
 
Gallium Oxide: Crystal Growth, Materials Properties, and Devices, p. 273-291 (2020), M. Higashiwaki, S. Fujita, eds. (Springer, Cham, 2020), ISBN 978-3-030-37152-4
[ | | extra ]

828
Krzysztof Dorywalski, Rüdiger Schmidt-Grund, Marius Grundmann
Hybrid GA-gradient method for thin films ellipsometric data evaluation
J. of Computational Science 47(11), 101201:1-7 (2020)
[ | ]

827
T. Jawinski, R. Scheer, H. von Wenckstern, M. Lorenz, M. Grundmann
Properties of epitaxially grown In₂S₃:V thin films for intermediate band solar cell application
Proc. 47th IEEE Photovoltaic Specialists Conference (PVSC), p. 2663-2666 (2020)
[ | ]

826
Jonas Michel, Daniel Splith, Julius Rombach, Alexandra Papadogianni, Theresa Berthold, Stefan Krischok, Marius Grundmann, Oliver Bierwagen, Holger von Wenckstern, Marcel Himmerlich
Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In₂O₃

ACS Appl. Mater. Interfaces 11(30), 27073-27087 (2019)
[ | | IF: 7.504 ]

825
O. Lahr, S. Vogt, H. von Wenckstern, M. Grundmann
Low-voltage operation of ring oscillators based on room-temperature-deposited amorphous zinc-tin-oxide channel MESFETs

Adv. Electron. Mater. 5(12), 1900548:1-5 (2019)
[ | | IF: 6.312 ]

824
O. Herrfurth, T. Pflug, M. Olbrich, M. Grundmann, A. Horn, R. Schmidt-Grund
Femtosecond-time-resolved imaging of the dielectric function of ZnO in the visible to near-IR spectral range

Appl. Phys. Lett. 115(21), 212103:1-5 (2019) [Editor's Pick]
[ | | IF: 3.794 ]

823
P. Storm, M. Kneiß, A. Hassa, T. Schultz, D. Splith, H. von Wenckstern, N. Koch, M. Lorenz, M. Grundmann
Epitaxial κ-(Al_xGa_1-x)₂O₃ Thin Films and Heterostructures grown by Tin-assisted VCCS-PLD

APL Mater. 7(11), 111110:1-8 (2019) [Editor's Pick]
[ | | IF: 4.323 ]

822
M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, M. Lorenz, M. Grundmann
Epitaxial Stabilization of Single Phase κ-(In_xGa_1-x)₂O₃ Thin Films up to x=0.28 on c-sapphire and κ-Ga₂O₃ (001) Templates by Tin-assisted VCCS-PLD

APL Mater. 7(10), 101102:1-10 (2019) [Editor's Pick]
[ | | IF: 4.323 ]

821
A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva, M. Grundmann
Erratum: “Structural, optical, and electrical properties of orthorhombic κ-(In_xGa_1-x)₂O₃ thin films” [APL Mater. 7, 022525 (2019)]

APL Mater. 7(7), 079901 (1 page) (2019)
[ | | IF: 4.323 ]

820
Chaker Fares, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, Eric Lambers, S.J. Pearton
Valence Band Offsets for ALD SiO₂ and Al₂O₃ on (In_xGa_1-x)₂O₃ for x=0.25-0.74

APL Mater. 7(7), 071115:1-7 (2019)
[ | | IF: 4.323 ]

819
A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva, M. Grundmann
Structural, optical and electrical properties of orthorhombic κ-(In_xGa_1-x)₂O₃ thin films

APL Mater. 7(2), 022525:1-9 (2019)
[ | | IF: 4.323 ]

818
M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, T. Schultz, N. Koch, M. Grundmann
Tin-Assisted Heteroepitaxial PLD-growth of κ-Ga₂O₃ Thin Films with High Crystalline Quality

APL Mater. 7(2), 022516:1-11 (2019)
[ | | IF: 4.323 ]

817
Robert Karsthof, Marius Grundmann, Holger von Wenckstern, Jesús Zúñiga-Pérez, Christiane Deparis
Nickel oxide-based heterostructures with large band offsets

arxiv: 1910.13169 (2019)
[ | ]

816
Vitaly Zviagin, Chris Sturm, Pablo Esquinazi, Marius Grundmann, Rüdiger Schmidt-Grund
Control of Magnetic Order in Spinel ZnFe₂O₄ Thin Films Through Intrinsic Defect Manipulation

arxiv: 1909.13711 (2019)
[ | link ]

815
Robert Karsthof, Marius Grundmann, Arthur Markus Anton, Friedrich Kremer
Polaronic inter-acceptor hopping transport in intrinsically doped nickel oxide

arxiv: 1905.03537 (2019)
[ | link ]

814
Steffen Richter, Oliver Herrfurth, Shirly Espinoza, Mateusz Rebarz, Miroslav Kloz, Joshua A. Leveillee, André Schleife, Stefan Zollner, Marius Grundmann, Jakob Andreasson, Rüdiger Schmidt-Grund
Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry

arxiv: 1902.05832 (2019)
[ | link ]

813
Slawomir Prucnal, Yonder Berencén, Mao Wang, Jörg Grenzer, Matthias Voelskow, Rene Hübner, Yuji Yamamoto, Alexander Scheit, Florian Bärwolf, Vitaly Zviagin, Rüdiger Schmidt-Grund, Marius Grundmann, Jerzy Żuk, Marcin Turek, Andrzej Droździel, Krzysztof Pyszniak, Robert Kudrawiec, Maciej P. Polak, Lars Rebohle, Wolfgang Skorupa, Manfred Helm, Shengqiang Zhou
Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping

arxiv: 1901.01721 (2019)
[ | link ]

812
A. Hassa, H. von Wenckstern, L. Vines, M. Grundmann
Influence of oxygen pressure on growth of Si-doped (Al_xGa_1-x)₂O₃ thin films on c-sapphire substrates by pulsed laser deposition

ECS J. Solid State Sci. Techn. 8(7), Q3217-Q3220 (2019)
[ | | IF: 1.808 ]

811
Stefan Müller, Laurenz Thyen, Daniel Splith, Anna Reinhardt, Holger von Wenckstern, Marius Grundmann
High-quality Schottky Barrier Diodes on β-Gallium Oxide Thin Films on Glass Substrate

ECS J. Solid State Sci. Techn. 8(7), Q3126-Q3132 (2019)
[ | | IF: 1.808 ]

810
Chaker Fares, Zahabul Islam, Aman Haque, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, S.J. Pearton
Effect of Annealing on the Band Alignment of ALD SiO₂ on (Al_xGa_1-x)₂O₃ for x=0.2-0.65

ECS J. Solid State Sci. Techn. 8(12), P751-P756 (2019)
[ | | IF: 1.808 ]

809
Chaker Fares, Max Kneiß, Holger von Wenckstern, Marko Tadjer, Fan Ren, Eric Lambers, Marius Grundmann, S.J. Pearton
Band Alignment of Atomic Layer Deposited SiO₂ and Al₂O₃ on (Al_xGa_1-x)₂O₃ for x=0.2-0.65

ECS J. Solid State Sci. Techn. 8(6), P351-P356 (2019)
[ | | IF: 1.808 ]

808
Marius Grundmann
Monolithic Waveguide-based Linear Photodetector Array for Use as Ultra-Compact Spectrometer

IEEE Transact. Electr. Dev. 66(1), 470-477 (2019)
[ | | IF: 2.062 ]

807
Oliver Lahr, Zhipeng Zhang, Frank Grotjahn, Peter Schlupp, Sofie Vogt, Holger von Wenckstern, Andreas Thiede, Marius Grundmann
Full-swing, High-gain Inverters Based on ZnSnO JFETs and MESFETs

IEEE Transact. Electr. Dev. 66(8), 3376-3381 (2019)
[ | | IF: 2.062 ]

806
Slawomir Prucnal, Yonder Berencén, Mao Wang, Lars Rebohle, Robert Kudrawiec, Maciej Polak, Vitaly Zviagin, Rüdiger Schmidt-Grund, Marius Grundmann, Joerg Grenzer, Marcin Turek, Andrzej Drozdziel, Krzysztof Pyszniak, Jerzy Zuk, Manfred Helm, Wolfgang Skorupa, Shengqiang Zhou
Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing

J. Appl. Phys. 125(20), 203105:1-7 (2019)
[ | | IF: 2.21 ]

805
Volker Gottschalch, Stefan Merker, Steffen Blaurock, Max Kneiß, Ulrike Teschner, Marius Grundmann, Harald Krautscheid
Heteroepitaxial growth of α-, β-, γ- and κ-Ga₂O₃ phases by metalorganic vapor phase epitaxy

J. Cryst. Growth 510(15 March 2019), 76-84 (2019)
[ | | IF: 1.552 ]

804
Zhijie Li, Hao Li, Zhonglin Wu, Mingkui Wang, Jingting Luo, Hamdi Torun, Pingan Hu, Chang Yang, Marius Grundmann, Xiaoteng Liu, Yong Qing Fu
Advances in designs and mechanisms of semiconducting metal oxide nanostructures for high-precision gas sensors operated at room-temperature

Mater. Horiz. 6(3), 470-506 (2019)
[ | | IF: 13.183 ]

803
Leonard Brillson, Jonathan Cox, Hantian Gao, Geoffrey Foster, William Ruane, Alexander Jarjour, Martin Allen, David Look, Holger von Wenckstern, Marius Grundmann
Native Point Defect Measurement and Manipulation In ZnO Nanostructures

Materials 12(14), 2242:1-15 (2019)
[ | | IF: 2.247 ]

802
Chris Sturm, Vitali Zviagin, Marius Grundmann
Applicability of the constitutive equations for the determination of the material properties of optically active materials

Opt. Lett. 44(6), 1351-1354 (2019) [Editor's Pick]
[ | | IF: 3.589 ]

801
Robert Karsthof, Marius Grundmann, Markus Anton, Friedrich Kremer
Polaronic inter-acceptor hopping transport in intrinsically doped nickel oxide

Phys. Rev. B 99(23), 235201:1-13 (2019) [Editor's Suggestion]
[ | | IF: 3.767 ]

800
Steffen Richter, Heinrich-Gregor Zirnstein, Jesús Zúñiga-Pérez, Christiane Deparis, Lukas Trefflich, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund
Voigt Exceptional Points in an Anisotropic ZnO-based Planar Microcavity: Square-Root Topology, Polarization Vortices, and Circularity

Phys. Rev. Lett. 123(22), 227401:1-7 (2019)
[ | | IF: 7.645 ]

799
M. Grundmann
Modeling of a waveguide-based UV-VIS-IR spectrometer based on a lateral (In,Ga)N alloy gradient
 
Phys. Status Solidi A 216(14), 1900170:1-5 (2019)
[ | | extra | IF: 1.648 ]

798
P. Schlupp, H. von Wenckstern, M. Grundmann
Electrical properties of vertical p-NiO/n-Ga₂O₃ and p-ZnCo₂O₄/n-Ga₂O₃ pn-heterodiodes

Phys. Status Solidi A 216(7), 1800729:1-6 (2019)
[ | | IF: 1.648 ]

797
Rüdiger Schmidt-Grund, Tom Michalsky, Marcel Wille, Marius Grundmann
Coherent polariton modes and lasing in ZnO nano- and microwires

Phys. Status Solidi B 256(4), 1800462:1-17 (2019)
[ | | IF: 1.522 ]

796
C.E. Precker, J. Barzola-Quiquia, P.D. Esquinazi, M. Stiller, M.K. Chan, M. Jaime, Z. Zhang, M. Grundmann
Record-Breaking Magnetoresistance at the Edge of a Microflake of Natural Graphite
 
Adv. Engin. Mater. 21(12), 1900991:1-6 (2019)
[ | | extra ]

795
Marius Grundmann
Copper iodide - very transparent with many holes and no holes at the same time
 
BuildMoNa Annual Report 2017, p. 26-30 (2019)
[ | link ]

794
Robert Staacke, Roger John, Max Kneiß, Marius Grundmann, Jan Meijer
Highly transparent conductors for optical and microwave access to spin based quantum systems
NPJ Quantum Information 5, 98:1-5 (2019)
[ | ]

793
Report Halbleiterphysik/Semiconductor Physics 2018
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

792
Max Kneiß, Philipp Storm, Gabriele Benndorf, Marius Grundmann, Holger von Wenckstern
Combinatorial material science and strain engineering enabled by pulsed laser deposition using radially segmented targets

ACS Comb. Sci. 20(11), 643-652 (2018)
[ | | IF: 3.032 ]

791
Max Kneiß, Chang Yang, José Barzola-Quiquia, Gabriele Benndorf, Holger von Wenckstern, Pablo Esquinazi, Michael Lorenz, Marius Grundmann
Suppression of grain boundary scattering in p-type transparent γ-CuI thin films due to interface tunneling currents

Adv. Mater. Interf. 5(6), 1701411:1-12 (2018)
[ | | IF: 4.279 ]

790
Alexander Jarjour, Jon W. Cox, William T. Ruane, Holger von Wenckstern, Marius Grundmann, Leonard J. Brillson
Single Metal Ohmic and Rectifying Contacts to ZnO Nanowires: A Defect Based Approach

Ann. Phys. 530(2), 1700335:1-6 (2018)
[ | | IF: 1.51 ]

789
Michael Lorenz, Stefan Hohenberger, Eduard Rose, Marius Grundmann
Atomically stepped, pseudomorphic, corundum-phase (Al_1-xGa_x)₂O₃ thin films (0 ≤ x < 0.08) grown on R-plane sapphire

Appl. Phys. Lett. 113(23), 231902:1-5 (2018) [Editor's Pick]
[ | | IF: 3.794 ]

788
Evgeny Krüger, Vitaly Zviagin, Chang Yang, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann
Temperature dependence of the dielectric function of thin film CuI in the spectral range (0.6-8.3) eV

Appl. Phys. Lett. 113(17), 172102:1-5 (2018)
[ | | IF: 3.794 ]

787
H. Modarresi, E. Menéndez, V.V. Lazenka, N. Pavlovic, M. Bisht, M. Lorenz, C. Petermann, M. Grundmann, A. Hardy, M.K. Van Bael, M.J. Van Bael, A. Vantomme, K. Temst
Morphology-induced spin frustration in granular BiFeO₃ thin films: Origin of the magnetic vertical shift

Appl. Phys. Lett. 113(14), 142402:1-5 (2018)
[ | | IF: 3.794 ]

786
Sophie Vogt, Holger von Wenckstern, Marius Grundmann
MESFETs and inverters based on amorphous zinc-tin-oxide thin films prepared at room temperature

Appl. Phys. Lett. 113(13), 133501:1-5 (2018)
[ | | IF: 3.794 ]

785
Hantian Gao, Shreyas Muralidharan, Nicolas Pronin, Md Rezaul Karim, Susan M. White, Thaddeus Asel, Geoffrey Foster, Sriram Krishnamoorthy, Siddharth Rajan, Lei R. Cao, Masataka Higashiwaki, Holger von Wenckstern, Marius Grundmann, Hongping Zhao, David C. Look, Leonard J. Brillson
Optical signatures of deep level defects in Ga₂O₃

Appl. Phys. Lett. 112(24), 242102:1-5 (2018)
[ | | IF: 3.794 ]

784
M. Grundmann
Elastic Theory of Pseudomorphic Monoclinic and Rhombohedral Heterostructures

J. Appl. Phys. 124(18), 185302:1-10 (2018) [invited]
[ | | IF: 2.21 ]

783
V. Prozheeva, R. Hölldobler, H. von Wenckstern, M. Grundmann, F. Tuomisto
Effects of alloy composition and Si-doping on vacancy defect formation in (In_xGa_1-x)₂O₃ thin films

J. Appl. Phys. 123(12), 125705:1-6 (2018)
[ | | IF: 2.21 ]

782
L.J. Brillson, G.M. Foster, J. Cox, W.T. Ruane, A.B. Jarjour, H. Gao, H. von Wenckstern, M. Grundmann, B. Wang, D.C. Look, A. Hyland, M.W. Allen
Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices

J. Electr. Mat. 47(9), 4980-4986 (2018)
[ | | IF: 1.635 ]

781
Agathe Bouvet-Marchand, Alain Graillot, János Volk, Rolanas Dauksevicius, Chris Sturm, Elise Saoutieff, Antoine Viana, Björn Christian, Vadim Lebedev, János Radó, István E. Lukács, Marius Grundmann, David Grosso, Cedric Loubat
Design of UV-Crosslinked Polymeric Thin Layers for Encapsulation of Piezoelectric ZnO Nanowires for Pressure-Based Fingerprint Sensors

J. Mater. Chem. C 6(3), 605-613 (2018)
[ | | IF: 7.059 ]

780
Christian Laube, Jessica Hellweg, Chris Sturm, Jan Griebel, Marius Grundmann, Axel Kahnt, Bernd Abel
Photo-Induced-Heating of Graphitised Nanodiamonds monitored by the Raman-Diamond-Peak

J. Phys. Chem. C 122(44), 25685-25691 (2018)
[ | | IF: 4.814 ]

779
Tom Michalsky, Marcel Wille, Marius Grundmann, Rüdiger Schmidt-Grund
Tunable and switchable lasing in a ZnO microwire cavity at room temperature

J. Phys. D: Appl. Phys. 51(42), 425305:1-6 (2018)
[ | | IF: 2.772 ]

778
Kerstin Brachwitz, Tammo Böntgen, Jörg Lenzner, Kartik Ghosh, Michael Lorenz, Marius Grundmann
Evolution of magnetization in epitaxial Zn_1-xFe_xO_z thin films (0 ≤ x ≤ 0.66) grown by pulsed laser deposition

J. Phys. D: Appl. Phys. 51(24), 245003:1-7 (2018)
[ | | IF: 2.772 ]

777
S. Hohenberger, V. Lazenka, K. Temst, C. Patzig, S. Selle, T. Höche, M. Grundmann, M. Lorenz
Effect of double layer thickness on magnetoelectric coupling in multiferroic BaTiO₃-Bi_0.95Gd_0.05FeO₃ multilayers

J. Phys. D: Appl. Phys. 51(18), 184002:1-9 (2018)
[ | | IF: 2.772 ]

776
Jonathan W. Cox, Geoffrey M. Foster, Alexander Jarjour, Holger von Wenckstern, Marius Grundmann, Leonard J. Brillson
Defect Manipulation to Control ZnO Micro-/Nanowire - Metal Contacts

Nano Lett. 18(11), 6974-6980 (2018)
[ | | IF: 13.025 ]

775
T. Michalsky, M. Wille, M. Grundmann, R. Schmidt-Grund
Spatiotemporal evolution of coherent polariton modes in ZnO microwire cavities

Nano Lett. 18(11), 6820-6825 (2018)
[ | | IF: 13.025 ]

774
J.K. Jochum, M. Lorenz, H.P. Gunnlaugsson, C. Patzig, T. Höche, M. Grundmann, A. Vantomme, K. Temst, M.J. Van Bael, V. Lazenka
Impact of magnetization and hyperfine field distribution on high magnetoelectric coupling strength in BaTiO₃-BiFeO₃ multilayers

Nanoscale 10(12), 5574-5580 (2018)
[ | | extra | IF: 7.394 ]

773
Thorsten Schulz, Sofie Bitter, Peter Schlupp, Holger von Wenckstern, Nobert Koch, Marius Grundmann
The influence of oxygen deficiency on the rectifying behavior of transparent semiconducting oxide-metal interfaces

Phys. Rev. Appl. 9(6), 064001:1-8 (2018) [Editor's Suggestion]
[ | | IF: 4.808 ]

772
S. Prucnal, Y. Berencén, M. Wang, J. Grenzer, M. Voelskow, R. Hübner, Y. Yamamoto, A. Scheit, F. Bärwolf, V. Zviagin, R. Schmidt-Grund, M. Grundmann, J. Żuk, M. Turek, A. Droździel, K. Pyszniak, R. Kudrawiec, M.P. Polak, L. Rebohle, W. Skorupa, M. Helm, S. Zhou
Strain and band gap engineering in GeSn alloys via P doping

Phys. Rev. Appl. 10(6), 064055:1-11 (2018)
[ | | IF: 4.808 ]

771
M. Grundmann
Monolithic Forward-looking Photodetector for Use as Ultra-Compact Wavemeter with Wide Spectral Range

Phys. Status Solidi A 215(24), 1800651:1-5 (2018)
[ | | IF: 1.648 ]

770
Tanja Jawinski, Leonard A. Wägele, Roland Scheer, Marius Grundmann, Holger von Wenckstern
Properties of In₂S₃-based pin-heterojunctions

Phys. Status Solidi A 215(11), 1700827:1-6 (2018)
[ | | IF: 1.648 ]

769
Rainer Pickenhain, Matthias Schmidt, Holger von Wenckstern, Gabriele Benndorf, Andreas Pöppl, Rolf Böttcher, Marius Grundmann
Negative U Properties of the Deep Level E3 in ZnO

Phys. Status Solidi B 255(7), 1700670:1-16 (2018)
[ | | IF: 1.522 ]

768
Daniel Splith, Stefan Müller, Holger von Wenckstern, Marius Grundmann
Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films

Proc. SPIE 10533, 105330C:1-8 (2018), David J. Rogers, David C. Look, Ferechteh H. Teherani, eds.
[ | ]

767
Tilo Meister, Frank Ellinger, Johann W. Bartha, Manfred Berroth, Joachim Burghartz, Martin Claus, Lothar Frey, Alessio Gagliardi, Marius Grundmann, Jan Hesselbarth, Hagen Klauk, Karl Leo, Paolo Lugli, Stefan Mannsfeld, Yiannos Manoli, Renato Negra, Daniel Neumaier, Ullrich Pfeiffer, Thomas Riedl, Susanne Scheinert, Ullrich Scherf, Andreas Thiede, Gerhard Troester, Martin Vossiek, Robert Weigel, Christian Wenger, Golzar Alavi, Markus Becherer, Carlos Alvarado Chavarin, Mohammed Darwish, Martin Ellinger, Chun-Yu Fan, Martin Fritsch, Frank Grotjahn, Marco Gunia, Katherina Haase, Philipp Hillger, Koichi Ishida, Michael Jank, Stefan Knobelspies, Matthias Kuhl, Grzegorz Lupina, Shabnam Mohammadi Naghadeh, Niko Münzenrieder, Sefa Özbek, Mahsa Rasteh, Giovanni A. Salvatore, Daniel Schrüfer, Carsten Strobel, Manuel Theisen, Christian Tückmantel, Holger von Wenckstern, Zhenxing Wang, Zhipeng Zhang
Program FFlexCom
2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), p. 1-4 (2018)
[ | ]

766
Steffen Richter, Jesús Zúñiga-Pérez, Christiane Deparis, Lukas Trefflich, Heinrich-Gregor Zirnstein, Tom Michalsky, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund
Exceptional Points in the Dispersion of Optically Anisotropic Planar Microcavities
IEEE Photonics Society Summer Topical Meeting Series, p. 195-196 (2018), ISBN 978-1-5386-4076-0
[ | ]

765
Tom Michalsky, Marcel Wille, Evgeny Krüger, Chris Sturm, Marius Grundmann, Rüdiger Schmidt-Grund
Coherent polariton states and lasing in ZnO nano- and microstructures
IEEE Photonics Society Summer Topical Meeting Series, p. 171-172 (2018), ISBN 978-1-5386-4076-0
[ | ]

764
Report Halbleiterphysik/Semiconductor Physics 2017
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

763
Report of The Physics Institutes of Universität Leipzig 2017
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

762
S. Bitter, P. Schlupp, H. von Wenckstern, M. Grundmann
The Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc-Tin-Oxide with Various Cation Composition

ACS Appl. Mater. Interfaces 9(31), 26574-26581 (2017)
[ | | IF: 7.504 ]

761
Michael Lorenz, Dietmar Hirsch, Christian Patzig, Thomas Höche, Stefan Hohenberger, Holger Hochmuth, Vera Lazenka, Kristiaan Temst, Marius Grundmann
Correlation of interface impurities and chemical gradients with magnetoelectric coupling strength in multiferroic BiFeO₃-BaTiO₃ superlattices

ACS Appl. Mater. Interfaces 9(22), 18956-18965 (2017)
[ | | IF: 7.504 ]

760
C. Sturm, R. Schmidt-Grund, V. Zviagin, M. Grundmann
Temperature dependence of the dielectric tensor of monoclinic dielectric Ga₂O₃ single crystals in the spectral range 0.5-8.5 eV

Appl. Phys. Lett. 111(8), 082102:1-4 (2017)
[ | | IF: 3.794 ]

759
Marcel Wille, Evgeny Krüger, Steffen Blaurock, Vitaly Zviagin, Rafael Deichsel, Gabriele Benndorf, Lukas Trefflich, Volker Gottschalch, Harald Krautscheid, Rüdiger Schmidt-Grund, Marius Grundmann
Lasing in cuprous iodide microwires

Appl. Phys. Lett. 111(3), 031105:1-5 (2017)
[ | | IF: 3.794 ]

758
Michael Lorenz, Jose Barzola-Quiquia, Chang Yang, Christian Patzig, Thomas Höche, Pablo Esquinazi, Marius Grundmann, Haoming Wei
Charge transfer-induced magnetic exchange bias and electron localization in (111)- and (001)-oriented LaNiO₃/LaMnO₃ superlattices

Appl. Phys. Lett. 110(10), 102403:1-5 (2017)
[ | | IF: 3.794 ]

757
Vera Lazenka, Michael Lorenz, Hiwa Modarresi, Johanna K. Jochum, Haraldur P. Gunnlaugsson, Marius Grundmann, Margriet J. Van Bael, Kristiaan Temst, André Vantomme
Interface induced out-of-plane magnetic anisotropy in magnetoelectric BiFeO₃-BaTiO₃ superlattices

Appl. Phys. Lett. 110(9), 092902:1-5 (2017)
[ | | IF: 3.794 ]

756
C. Sturm, M. Wille, J. Lenzner, S. Khujanov, M. Grundmann
Non-linear optical deformation potentials in uniaxially strained ZnO microwires

Appl. Phys. Lett. 110(6), 062103:1-4 (2017)
[ | | IF: 3.794 ]

755
Yogesh Kumar, Israel Lorite, Michael Lorenz, Pablo D. Esquinazi, Marius Grundmann
Effect of annealing on the magnetic properties of zinc ferrite thin films

arxiv: 1702.06033 (2017)
[ | link ]

754
Krzysztof Dorywalski, Nathalie Lemée, Bohdan Andriyevsky, Rüdiger Schmidt-Grund, Marius Grundmann, Michał Piasecki, Marie Bousquet, Tomasz Krzyżyński
Optical properties of epitaxial Na_0.5Bi_0.5TiO₃ lead-free piezoelectric thin films: Ellipsometric and theoretical studies

Appl. Surf. Sci. 421(B), 367-372 (2017)
[ | | IF: 2.112 ]

753
Martin Welke, Kerstin Brachwitz, Michael Lorenz, Marius Grundmann, Karl-Michael Schindler, Angelika Chasse, Reinhard Denecke
Structure and cation distribution in (Mn_0.5Zn_0.5)Fe₂O₄ thin films on SrTiO₃(001)

J. Appl. Phys. 121(22), 225305:1-7 (2017)
[ | | IF: 2.21 ]

752
Volker Gottschalch, Steffen Blaurock, Gabriele Benndorf, Jörg Lenzner, Marius Grundmann, Harald Krautscheid
Copper Iodide synthesized by iodization of Cu-films and deposited using MOCVD

J. Cryst. Growth 471, 21-28 (2017)
[ | | IF: 1.552 ]

751
Michael Lorenz, Haoming Wei, Florian Jung, Stefan Hohenberger, Holger Hochmuth, Marius Grundmann
Two-dimensional Frank - van der Merwe growth of functional oxide and nitride thin film superlattices by pulsed laser deposition

J. Mat. Res. 32(21), 3936-3946 (2017)
[ | | IF: 1.713 ]

750
Haoming Wei, Chang Yang, Jose Luis Barzola-Quiquia, Martin Welke, Reinhard Denecke, Christian Patzig, Thomas Höche, Pablo Esquinazi, Marius Grundmann, Michael Lorenz
Ferromagnetic phase transition and single-gap type electrical conductivity of epitaxial LaMnO₃/LaAlO₃ superlattices

J. Phys. D: Appl. Phys. 50(43), 43LT02:1-6 (2017)
[ | | IF: 2.772 ]

749
L. Vines, C. Bhoodoo, H. von Wenckstern, M. Grundmann
Electrical conductivity of In₂O₃ and Ga₂O₃ after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level

J. Phys. D: Appl. Phys. 30(2), 025502:1-6 (2017)
[ | | IF: 2.772 ]

748
C. Yang, D. Souchay, M. Kneiß, M. Bogner, H. M. Wei, M. Lorenz, O. Oeckler, G. Benstetter, Y.Q. Fu, M. Grundmann
Transparent Flexible Thermoelectric Material Based on Non-toxic Earth-Abundant p-Type Copper Iodide Thin Film

Nature Commun. 8, 16076:1-7 (2017)
[ | | extra | IF: 12.001 ]

747
Maximilian Zapf, Robert Röder, Karl Winkler, Lisa Kaden, Johannes Greil, Marcel Wille, Marius Grundmann, Rüdiger Schmidt-Grund, Alois Lugstein, Carsten Ronning
Dynamical Tuning of Nanowire Lasing Spectra

Nano Lett. 17(11), 6637-6643 (2017)
[ | | IF: 13.025 ]

746
Alexander Shkurmanov, Chris Sturm, Helena Franke, Jörg Lenzner, Marius Grundmann
Low temperature PLD-growth of ultrathin ZnO nanowires by using Zn_xAl_1-xO and Zn_xGa_1-xO seed layers

Nanoscale Res. Lett. 12, 134:1-7 (2017)
[ | | IF: 2.584 ]

745
A. de Pablos Martín, M. Lorenz, M. Grundmann, Th. Höche
Laser Welding of Fused Silica Glass with Sapphire Using a Non- Stoichiometric, Fresnoitic Ba₂TiSi₂O₈

Optics & Laser Technol. 92, 85-94 (2017)
[ | | IF: 1.647 ]

744
Steffen Richter, Tom Michalsky, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund
Erratum: Exceptional points in anisotropic planar microcavities

Phys. Rev. A 96(5), 059902E:1-2 (2017)
[ | | IF: 3.042 ]

743
Steffen Richter, Tom Michalsky, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund
Exceptional points in anisotropic planar microcavities

Phys. Rev. A 95(2), 023836:1-9 (2017)
[ | | IF: 3.042 ]

742
P. Schlupp, H. von Wenckstern, M. Grundmann
Schottky barrier diodes based on room temperature fabricated amorphous zinc tin oxide thin film

Phys. Status Solidi A 214(10), 1700210:1-8 (2017)
[ | | IF: 1.648 ]

741
M. Grundmann
Strain in Pseudomorphic Monoclinic Ga₂O₃-based Heterostructures

Phys. Status Solidi B 254(9), 1700134:1-7 (2017)
[ | | IF: 1.522 ]

740
Marius Grundmann, Chris Sturm, Christian Kranert, Steffen Richter, Rüdiger Schmidt-Grund, Christianne Deparis, Jesús Zúñiga-Pérez
Optically Anisotropic Media: New Approaches to the Dielectric Function, Singular Axes, Raman Scattering Intensities and Microcavity Modes
 
Phys. Status Solidi RRL 11(1), 1600295:1-19 (2017)
[ | | extra | IF: 2.58 ]

739
Marius Grundmann, Steffen Richter, Tom Michalsky, Chris Sturm, Jesús Zúñiga-Pérez, Rüdiger Schmidt-Grund
Exceptional points in anisotropic photonic structures: From non-Hermitian physics to possible device applications

Proc. SPIE 10105, 101050K:1-8 (2017), Ferechteh H. Teherani, David C. Look, David J. Rogers, eds.
[ | ]

738
Stefan Müller, Holger von Wenckstern, Florian Schmidt, Daniel Splith, Heiko Frenzel, Marius Grundmann
Method of choice for fabrication of high-quality β-gallium oxide-based Schottky diodes

Semic. Sci. Technol. 32(6), 065013:1-8 (2017)
[ | | IF: 2.098 ]

737
T. Lühmann, R. Wunderlich, R. Schmidt-Grund, J. Barzola-Quiquia, P. Esquinazi, M. Grundmann, J. Meijer
Investigation of the graphitization process of ion-beam irradiated diamond using ellipsometry, Raman spectroscopy and electrical transport measurements
Carbon 121, 512-517 (2017)
[ | ]

736
Yogesh Kumar, Israel Lorite, Michael Lorenz, Pablo Esquinazi, Marius Grundmann
Effect of annealing on the magnetic properties of zinc ferrite thin films
Mater. Lett. 195, 89-91 (2017)
[ | ]

735
H.-E. Zschau, M. Schütze, M.C. Galetz, B.M. Gleeson, S. Neve, M. Lorenz, M. Grundmann
Surface Chemistry Evolution of F-doped Ni-base Superalloy upon Heat Treatment
Materials and Corrosion 68(2), 220-227 (2017)
[ | ]

734
Report Halbleiterphysik/Semiconductor Physics 2016
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

733
Report of The Physics Institutes of Universität Leipzig 2016
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

732
M. Grundmann
Felix Bloch (1905-1983) in Leipzig (in English)
 
WWW homepage of Felix Bloch Institute for Solid State Physics of Universität Leipzig:1-4
[ | link ]

731
M. Grundmann
Felix Bloch (1905-1983) in Leipzig (in German)
 
WWW-Seite des Felix-Bloch-Institut für Festkörperphysik der Universität Leipzig:1-4
[ | link ]

730
Marius Grundmann
The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 3rd edition
 
(Springer, Heidelberg, 2016), ISBN 978-3-319-23879-1
[ link | | extra ]

729
Nikolay Petkov, János Volk, Róbert Erdélyi, István Endre Lukács, Takahiro Nagata, Chris Sturm, Marius Grundmann
Contacting ZnO individual crystal facets by direct write lithography

ACS Appl. Mater. Interfaces 8(36), 23891-23898 (2016)
[ | | IF: 7.504 ]

728
Sofie Bitter, Peter Schlupp, Michael Bonholzer, Holger von Wenckstern, Marius Grundmann
Influence of the cation ratio on optical and electrical properties of zinc-tin-oxide thin films from pulsed-laser deposition

ACS Comb. Sci. 18(4), 188-194 (2016)
[ | | IF: 3.032 ]

727
F.J. Klüpfel, H. von Wenckstern, M. Grundmann
Ring Oscillators based on ZnO Channel JFETs and MESFETs
 
Adv. Electron. Mater. 2(7), 1500431:1-5 (2016)
[ | | extra | IF: 6.312 ]

726
Michael Lorenz, Vera Lazenka, Peter Schwinkendorf, Margriet J. Van Bael, André Vantomme, Kristiaan Temst, Marius Grundmann, Thomas Höche
Epitaxial coherence at interfaces as origin of high magnetoelectric coupling in multiferroic BaTiO₃ - BiFeO₃ superlattices

Adv. Mater. Interf. 3(11), 1500822:1-7 (2016)
[ | | extra | IF: 4.279 ]

725
M. Stiller, J. Barzola-Quiquia, P. Esquinazi, D. Spemann, J. Meijer, M. Lorenz, M. Grundmann
Strong out-of-plane magnetic anisotropy in ion irradiated anatase TiO₂ thin films

AIP Adv. 6(12), 125009:1-13 (2016)
[ | | IF: 1.444 ]

724
Alexander Shkurmanov, Chris Sturm, Jörg Lenzner, Guy Feuillet, Florian Tendille, Philippe De Mierry, Marius Grundmann
Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates

AIP Adv. 6(9), 095013:1-5 (2016)
[ | | IF: 1.444 ]

723
Haoming Wei, Marius Grundmann, Michael Lorenz
Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO₃/ LaAlO₃ (111) superlattices

Appl. Phys. Lett. 109(8), 082108:1-5 (2016)
[ | | IF: 3.794 ]

722
M. Wille, T. Michalsky, E. Krüger, M. Grundmann, R. Schmidt-Grund
Absorptive lasing mode suppression in ZnO nano- and microcavities

Appl. Phys. Lett. 109(6), 061102:1-4 (2016)
[ | | IF: 3.794 ]

721
I. Lorite, Y. Kumar, P. Esquinazi, S. Friedländer, A. Pöppl, T. Michalsky, J. Meijer, M. Grundmann, T. Mayer
Photo-enhanced magnetization in Fe-doped ZnO nanowires

Appl. Phys. Lett. 109(1), 012401:1-4 (2016)
[ | | IF: 3.794 ]

720
Jesús Zúñiga-Pérez, Lars Kappei, Christiane Deparis, François Reveret, Marius Grundmann, Esther de Prado, Omar Jamadi, Joel Leymarie, Sébastien Chenot, Mathieu Leroux
Homoepitaxial nonpolar (10-10) ZnO/ZnMgO heterostructures: from single layers to monolithic Bragg reflectors and optical microcavities

Appl. Phys. Lett. 108(25), 251904:1-5 (2016)
[ | | IF: 3.794 ]

719
Zhipeng Zhang, Holger von Wenckstern, Jörg Lenzner, Marius Grundmann
Wavelength-selective ultraviolet (Mg,Zn)O photodiodes: Tuning of parallel composition gradients with oxygen pressure

Appl. Phys. Lett. 108(24), 243503:1-5 (2016)
[ | | IF: 3.794 ]

718
V. Zviagin, Y. Kumar, I. Lorite, P. Esquinazi, M. Grundmann, R. Schmidt-Grund
Ellipsometric Investigation of ZnFe₂O₄ Thin Films in Relation to Magnetic Properties

Appl. Phys. Lett. 108(13), 131901:1-4 (2016)
[ | | IF: 3.794 ]

717
Zhipeng Zhang, Holger von Wenckstern, Jörg Lenzner, Michael Lorenz, Marius Grundmann
Visible-blind and solar-blind ultraviolet photodiodes based on (In_xGa_1-x)₂O₃

Appl. Phys. Lett. 108(12), 123503:1-5 (2016)
[ | | IF: 3.794 ]

716
Rami Khazaka, Marius Grundmann, Marc Portail, Philippe Vennéguès, Marcin Zielinski, Thierry Chassagne, Daniel Alquier, Jean-François Michaud
Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C SiC(001)

Appl. Phys. Lett. 108(1), 011608:1-4 (2016)
[ | | IF: 3.794 ]

715
Steffen Richter, Tom Michalsky, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund
Exceptional points in anisotropic planar microcavities

arxiv: 1609.07653 (2016)
[ | link ]

714
Christian Kranert, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann
Raman tensor elements of β-Ga₂O₃

arxiv: 1606.07409 (2016)
[ | link ]

713
I. Lorite, Y. Kumar, P. Esquinazi, S. Friedländer, A. Pöppl, T. Michalsky, J. Meijer, M. Grundmann, T. Meyer, I. Estrela-Lopis
Photo-enhanced magnetization in Fe-doped ZnO nanowires

arxiv: 1606.06955 (2016)
[ | link ]

712
Marcus Jenderka, Steffen Richter, Michael Lorenz, Marius Grundmann
Fundamental absorption edges in heteroepitaxial Y₁Bi₁O₃ thin films

arxiv: 1606.03945 (2016)
[ | link ]

711
Tom Michalsky, Helena Franke, Robert Buschlinger, Ulf Peschel, Marius Grundmann, Rüdiger Schmidt-Grund
Coexistence of strong and weak coupling in ZnO nanowire cavities

arxiv: 1602.06804 (2016)
[ | link ]

710
Chris Sturm, Rüdiger Schmidt-Grund, Christian Kranert, Jürgen Furthmüller, Friedhelm Bechstedt, Marius Grundmann
Dipole Analysis of the Dielectric Function of Colour Dispersive Materials: Application to Monoclinic Ga₂O₃

arxiv: 1601.07892 (2016)
[ | link ]

709
M. Wille, C. Sturm, T. Michalsky, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann
Carrier density driven material dynamics of lasing ZnO Nanowires

arxiv: 1601.03866 (2016)
[ | link ]

708
Marius Grundmann, Chris Sturm
The Singular Optical Axes in Biaxial Crystals and Analysis of Their Spectral Dispersion Effects in β-Ga₂O₃

arxiv: 1601.03760:1-7 (2016)
[ | link ]

707
Tom Michalsky, Helena Franke, Robert Buschlinger, Ulf Peschel, Marius Grundmann, Rüdiger Schmidt-Grund
Coexistence of strong and weak coupling in ZnO nanowire cavities

Eur. Phys. J. Appl. Phys. 74(3), 30502:1-10 (2016)
[ | | IF: 0.667 ]

706
Abdurashid Mavlonov, Steffen Richter, Holger von Wenckstern, Rüdiger Schmidt-Grund, Michael Lorenz, Marius Grundmann
Temperature dependent self-compensation in Al and Ga-doped Mg_0.05Zn_0.95O thin films grown by pulsed laser deposition

J. Appl. Phys. 120(20), 205703:1-6 (2016)
[ | | IF: 2.21 ]

705
M. Jenderka, S. Richter, M. Lorenz, M. Grundmann
Fundamental absorption edges in heteroepitaxial YBiO₃ thin films

J. Appl. Phys. 120(12), 125702:1-4 (2016)
[ | | IF: 2.21 ]

704
Kazuki Narushima, Yoshito Ashizawa, Kerstin Brachwitz, Holger Hochmuth, Michael Lorenz, Marius Grundmann, Katsuji Nakagawa
Magnetic activity of surface plasmon resonance using dielectric magnetic materials fabricated on quartz glass substrate

Jpn. J. Appl. Phys. 55(7S3), 07MC05:1-4 (2016)
[ | | IF: 1.067 ]

703
M. Lorenz, M.S. Ramachandra Rao, T. Venkatesan, E. Fortunato, P. Barquinha, R. Branquinho, D. Salgueiro, R. Martins, E. Carlos, A. Liu, F.K. Shan, M. Grundmann, H. Boschker, J. Mukherjee, M. Priyadarshini, N. DasGupta, D.J. Rogers, F.H. Teherani, E.V. Sandana, P. Bove, K. Rietwyk, A. Zaban, A. Veziridis, A. Weidenkaff, M. Muralidhar, M. Murakami, S. Abel, J. Fompeyrine, J. Zúñiga-Pérez, R. Ramesh, N.A. Spaldin, S. Ostanin, V. Borisov, I. Mertig, V. Lazenka, G. Srinivasan, W. Prellier, M. Uchida, M. Kawasaki, R. Pentcheva, P. Gegenwart, F. Miletto Granozio, J. Fontcuberta, N. Pryds
The 2016 oxide electronic materials and oxide interfaces roadmap (ch. 3, M. Grundmann: Bipolar oxide devices)
 
J. Phys. D: Appl. Phys. 49(43), 433001:1-53 (2016)
[ | | extra | IF: 2.772 ]

702
H. Modarresi, V. Lazenka, E. Menéndez, M. Lorenz, M. Bisht, A. Volodin, C. Van Haesendonck, M. Grundmann, M. J. Van Bael, K. Temst, A. Vantomme
Induced ferromagnetism and magnetoelectric coupling in ion-beam synthesized BiFeO₃-CoFe₂O₄ nanocomposite thin films

J. Phys. D: Appl. Phys. 49(32), 325302:1-6 (2016)
[ | | IF: 2.772 ]

701
Marius Grundmann, Fabian Klüpfel, Robert Karsthof, Peter Schlupp, Friedrich-Leonhard Schein, Daniel Splith, Chang Yang, Sofie Bitter, Holger von Wenckstern
Oxide Bipolar Electronics: Materials, Devices and Circuits

J. Phys. D: Appl. Phys. 49(21), 213001:1-25 (2016) [Topical Review]
[ | | IF: 2.772 ]

700
R. Karsthof, H. von Wenckstern, M. Grundmann
Semi-transparent ZnO-based UV-active solar cells: Analysis of electrical loss mechanisms

J. Vac. Sci. Technol. B 34(4), 04J107:1-8 (2016)
[ | | IF: 1.267 ]

699
Michael Lorenz, Gerald Wagner, Vera Lazenka, Peter Schwinkendorf, Michael Bonholzer, Margriet J. Van Beal, André Vantomme, Kristiaan Temst, Oliver Oeckler, Marius Grundmann
Correlation of high magnetoelectric coupling with oxygen vacancy superstructure in epitaxial multiferroic BaTiO₃-BiFeO₃ composite thin films

Materials 9(1), 44:1-13 (2016)
[ | | extra | IF: 2.247 ]

698
Araceli de Pablos-Martín, Sebastian Tismer, Falk Naumann, Michael Krause, Michael Lorenz, Marius Grundmann, Thomas Höche
Evaluation of the Bond Quality of Laser-Joined Sapphire Wafers using a Fresnoite-Glass Sealant

Microsyst. Technol. 22(1), 207-214 (2016)
[ | | IF: 0.952 ]

697
Leonard Brillson, William T. Ruane, Hantian Gao, Yuanyao Zhang, Jian Luo, Holger von Wenckstern, Marius Grundmann
Spatially-Resolved Cathodoluminescence Spectroscopy of ZnO Defects

Mat. Sci. Semic. Process. 57, 197-209 (2016)
[ | | IF: 2.264 ]

696
W.T. Ruane, K.M. Johansen, K. Leedy, D.C. Look, H. von Wenckstern, M. Grundmann, L.J. Brillson
Defect Segregation and Optical Emission in ZnO Nano- and Microwires

Nanoscale 8(14), 7631-7637 (2016)
[ | | IF: 7.394 ]

695
M. Wille, C. Sturm, T. Michalsky, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann
Carrier density driven material dynamics of lasing ZnO Nanowires

Nanotechnology 27(22), 225702:1-7 (2016)
[ | | IF: 3.842 ]

694
A. de Pablos-Martin, S. Tismer, G. Benndorf, M. Mittag, M. Lorenz, M. Grundmann, Th. Höche
Laser soldering of sapphire substrates using a BaTiAl₆O₁₂ thin-film glass sealant

Optics & Laser Technol. 81, 153-161 (2016)
[ | | IF: 1.647 ]

693
A. de Pablos-Martin, G. Benndorf, Sebastian Tismer, M. Mittag, A. Cismak, M. Lorenz, M. Grundmann, Th. Höche
Laser-Welded Fused Silica Substrates Using a Luminescent Fresnoite-Based Sealant

Optics & Laser Technol. 80, 176-185 (2016)
[ | | IF: 1.647 ]

692
Chang Yang, Max Kneiß, Michael Lorenz, Marius Grundmann
Room-temperature Synthesized Copper Iodide Thin Film as Degenerate p-Type Transparent Conducting Material with a Boosted Figure of Merit

PNAS 113(46), 12929-12933 (2016)
[ | | IF: 9.423 ]

691
Chris Sturm, Marius Grundmann
The Singular Optical Axes in Biaxial Crystals and Analysis of Their Spectral Dispersion Effects in β-Ga₂O₃

Phys. Rev. A 93(5), 053839:1-8 (2016)
[ | | extra | IF: 3.042 ]

690
C. Sturm, R. Schmidt-Grund, C. Kranert, J. Furthmüller, F. Bechstedt, M. Grundmann
Dipole analysis of the dielectric function of color dispersive materials: Application to monoclinic Ga₂O₃

Phys. Rev. B 94(3), 035148:1-11 (2016)
[ | | IF: 3.767 ]

689
Martin Thunert, Alexander Janot, Helena Franke, Chris Sturm, Tom Michalsky, María Dolores Martín, Luis Viña, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund
Cavity Polariton Condensate in a Disordered Environment

Phys. Rev. B 93(6), 064203:1-12 (2016)
[ | | IF: 3.767 ]

688
Christian Kranert, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann
Raman Tensor Formalism for Optically Anisotropic Crystals

Phys. Rev. Lett. 116(12), 127401:1-5 (2016)
[ | | extra | IF: 7.645 ]

687
Robert Karsthof, Paul Räcke, Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann
Semi-transparent n-ZnO/p-NiO UV solar cells
 
Phys. Status Solidi A 213(1), 30-37 (2016)
[ | | extra | IF: 1.648 ]

686
Anna Reinhardt, Heiko Frenzel, Holger von Wenckstern, Daniel Spemann, Marius Grundmann
Electron transport mechanism in rf-sputtered amorphous zinc oxynitride thin films

Phys. Status Solidi A 213(7), 1767-1773 (2016)
[ | | IF: 1.648 ]

685
V. Zviagin, P. Richter, T. Böntgen, M. Lorenz, M. Ziese, D.R.T. Zahn, G. Salvan, M. Grundmann, R. Schmidt-Grund
Comparative Study of Optical and Magneto-Optical Properties of Normal, Disordered and Inverse Spinel Type Oxides

Phys. Status Solidi B 253(3), 429-436 (2016)
[ | | IF: 1.522 ]

684
Marius Grundmann, Jesús Zúñiga-Pérez
Pseudomorphic ZnO-based heterostructures: from polar through all semipolar to nonpolar orientations

Phys. Status Solidi B 253(2), 351-360 (2016)
[ | | IF: 1.522 ]

683
Christian Kranert, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann
Raman tensor elements of β-Ga₂O₃

Sci. Rep. 6, 35964:1-9 (2016)
[ | | IF: 5.578 ]

682
Chang Yang, Max Kneiß, Friedrich-Leonhard Schein, Michael Lorenz, Marius Grundmann
Room-temperature domain-epitaxy of copper iodide thin films for transparent CuI/ZnO heterojunctions with high rectification ratios larger than 10⁹

Sci. Rep. 6, 21937:1-8 (2016)
[ | | extra | IF: 5.578 ]

681
Marius Grundmann
Don't mourn the losses
 
BuildMoNa Annual Report 2016, p. 26-29 (2016)
[ | link ]

680
Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern
TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE
JP 5897621 B2 (Japan Patent Office, 2016)
[ ]

679
Alexander Shkurmanov, Chris Sturm, Holger Hochmuth, Marius Grundmann
Growth kinetics of ultrathin ZnO Nanowires grown by Pulsed Laser Deposition
Proc. Eng. 168, 1156-1159 (2016)
[ | ]

678
Report Halbleiterphysik/Semiconductor Physics 2015
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

677
Report of The Physics Institutes of Universität Leipzig 2015
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

676
Holger von Wenckstern, Daniel Splith, Anna Werner, Stefan Müller, Michael Lorenz, Marius Grundmann
Properties of Schottky barrier diodes on (In_xGa_1-x)₂O₃ for 0.01 ≤ x ≤ 0.85 determined by using a combinatorial approach

ACS Comb. Sci. 17(12), 710-715 (2015)
[ | | IF: 3.032 ]

675
H. von Wenckstern, D. Splith, S. Lanzinger, F. Schmidt, S. Müller, P. Schlupp, R. Karsthof, M. Grundmann
pn-heterodiodes with n-type In₂O₃

Adv. Electron. Mater. 1(4), 1400026:1-6 (2015)
[ | | IF: 6.312 ]

674
P. Schlupp, F.-L. Schein, H. von Wenckstern, M. Grundmann
All Amorphous Oxide Bipolar Heterojunction Diodes from Abundant Metals

Adv. Electron. Mater. 1(1-2), 1400023:1-5 (2015)
[ | | IF: 6.312 ]

673
Sylvio Schubert, Florian Schmidt, Holger von Wenckstern, Marius Grundmann, Karl Leo, Lars Müller-Meskamp
Eclipse Pulsed Laser Deposition for Damage-Free Preparation of Transparent ZnO Electrodes on Top of Organic Solar Cells

Adv. Funct. Mater. 25(27), 4321-4327 (2015)
[ | | IF: 10.4 ]

672
Stefan Müller, Holger von Wenckstern, Florian Schmidt, Daniel Splith, Friedrich-Leonhard Schein, Heiko Frenzel, Marius Grundmann
Comparison of Schottky contacts on β-gallium oxide thin films and bulk crystals

Appl. Phys. Expr. 8(12), 121102:1-4 (2015)
[ | | IF: 2.567 ]

671
Robert Schewski, Günter Wagner, Michele Baldini, Daniela Gogova, Zbigniew Galazka, Tobias Schulz, Thilo Remmele, Toni Markurt, Holger von Wenckstern, Marius Grundmann, Oliver Bierwagen, Patrick Vogt, Martin Albrecht
Epitaxial stabilization of pseudomorphic α-Ga₂O₃ on sapphire (0001)

Appl. Phys. Expr. 8(1), 011101:1-4 (2015)
[ | | IF: 2.567 ]

670
Steffen Richter, Tom Michalsky, Lennart Fricke, Chris Sturm, Helena Franke, Marius Grundmann, Rüdiger Schmidt-Grund
Maxwell consideration of polaritonic quasi-particle Hamiltonians in multi-level systems

Appl. Phys. Lett. 107(23), 231104:1-5 (2015)
[ | | IF: 3.794 ]

669
Vera Lazenka, Michael Lorenz, Hiwa Modarresi, Manisha Bisht, Rudolf Rüffer, Michael Bonholzer, Marius Grundmann, Margriet J. Van Bael, André Vantomme, Kristiaan Temst
Magnetic spin structure and magnetoelectric coupling in BiFeO₃-BaTiO₃ multilayer

Appl. Phys. Lett. 106(8), 082904:1-4 (2015)
[ | | IF: 3.794 ]

668
Haoming Wei, Marcus Jenderka, Michael Bonholzer, Marius Grundmann, Michael Lorenz
Modeling the conductivity around the dimensionality-controlled metal-insulator transition in LaNiO₃/LaAlO₃ (100) superlattices

Appl. Phys. Lett. 106(4), 042103:1-5 (2015)
[ | | IF: 3.794 ]

667
F.J. Klüpfel, H. von Wenckstern, M. Grundmann
Low Frequency Noise of ZnO based MESFETs

Appl. Phys. Lett. 106(3), 033502:1-4 (2015)
[ | | IF: 3.794 ]

666
Michael Lorenz, Gerald Wagner, Vera Lazenka, Peter Schwinkendorf, Hiwa Modarresi, Margriet J. Van Bael, André Vantomme, Kristiaan Temst, Oliver Oeckler, Marius Grundmann
Correlation of magnetoelectric coupling in multiferroic BaTiO₃-BiFeO₃ superlattices with oxygen vacancies and antiphase octahedral rotations

Appl. Phys. Lett. 106(1), 012905:1-5 (2015)
[ | | extra | IF: 3.794 ]

665
Chris Sturm, Jürgen Furthmüller, Friedhelm Bechstedt, Rüdiger Schmidt-Grund, Marius Grundmann
Dielectric tensor of monoclinic Ga₂O₃ single crystals in the spectral range 0.5-8.5 eV

APL Mater. 3(10), 106106:1-9 (2015)
[ | | IF: 4.323 ]

664
Chris Sturm, Jürgen Furthmüller, Friedhelm Bechstedt, Rüdiger Schmidt-Grund, Marius Grundmann
Dielectric tensor of monoclinic Ga₂O₃ single crystals in the spectral range 0.5-8.5eV

arxiv: 1507.05401 (2015)
[ | link ]

663
Vitaly Zviagin, Peter Richter, Tammo Böntgen, Michael Lorenz, Michael Ziese, Dietrich R.T. Zahn, Georgeta Salvan, Marius Grundmann, Rüdiger Schmidt-Grund
Comparative Study of Optical and Magneto-Optical Properties of Normal, Disordered and Inverse Spinel Type Oxides

arxiv: 1505.04664 (2015)
[ | link ]

662
I. Lorite, C. Zandalazini, P. Esquinazi, D. Spemann, S. Friedländer, A. Pöppl, T. Michalsky, M. Grundmann, J. Vogt, J. Meijer, S.P. Heluani, H. Ohldag, W.A. Adeagbo, S.K. Nayak, W. Hergert, A. Ernst, M. Hoffmann
Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires

arxiv: 1504.08230 (2015)
[ | link ]

661
Steffen Richter, Stefan G. Ebbinghaus, Marius Grundmann, Rüdiger Schmidt-Grund
Antiferromagnetic phase transition in the temperature-dependent NIR-VUV dielectric function of hexagonal YMnO₃

arxiv: 1503.04043 (2015)
[ | link ]

660
T. Michalsky, H. Franke, C. Sturm, M. Grundmann, R. Schmidt-Grund
Discrete relaxation of exciton-polaritons in an inhomogeneous potential

arxiv: 1501.02644 (2015)
[ | link ]

659
C.P. Dietrich, R. Schmidt-Grund, T. Michalsky, M. Lange, M. Grundmann
Room-temperature condensation in whispering gallery microresonators assisted by longitudinal optical phonons

arxiv: 1501.01255:1-11 (2015)
[ | link ]

658
Fabian Johannes Klüpfel, Agnes Holtz, Friedrich-Leonhard Schein, Holger von Wenckstern, Marius Grundmann
All-Oxide Inverters Based On ZnO Channel JFETs With Amorphous ZnCo₂O₄ Gates

IEEE Transact. Electr. Dev. 62(12), 4004-4008 (2015)
[ | | IF: 2.062 ]

657
R. Karsthof, H. von Wenckstern, M. Grundmann
Transparent JFETs Based on p-NiO/n-ZnO Heterojunctions

IEEE Transact. Electr. Dev. 62(12), 3999-4003 (2015)
[ | | IF: 2.062 ]

656
R. Schmidt-Grund, C. Kranert, H. von Wenckstern, V. Zviagin, M. Grundmann
Dielectric function in the spectral range (0.5-8.5)eV of an (Al_xGa_1-x)₂O₃ thin film with continuous composition spread

J. Appl. Phys. 117(16), 165307:1-7 (2015)
[ | | IF: 2.21 ]

655
Christian Kranert, Marcus Jenderka, Jörg Lenzner, Michael Lorenz, Holger von Wenckstern, Rüdiger Schmidt-Grund, Marius Grundmann
Lattice parameters and Raman-active phonon modes of β-(Al_xGa_1-x)₂O₃

J. Appl. Phys. 117(12), 125703:1-6 (2015)
[ | | IF: 2.21 ]

654
Marcus Jenderka, Rüdiger Schmidt-Grund, Marius Grundmann, Michael Lorenz
Electronic excitations and structure of Li₂IrO₃ thin films grown on ZrO₂:Y (001) substrates

J. Appl. Phys. 117(2), 025304:1-5 (2015)
[ | link | | IF: 2.21 ]

653
Rolf Böttcher, Michael Lorenz, Andreas Pöppl, Daniel Spemann, Marius Grundmann
Local zinc blende coordination in heteroepitaxial wurtzite Zn_1-xMg_xO:Mn thin films with 0.01 ≤ x ≤ 0.04 identified by electron paramagnetic resonance

J. Mater. Chem. C 3(45), 11918-11929 (2015)
[ | | IF: 7.059 ]

652
I. Lorite, C. Zandalazini, P. Esquinazi, D. Spemann, S. Friedländer, A. Pöppl, T. Michalsky, M. Grundmann, J. Vogt, J. Meijer, S.P. Heluani, H. Ohldag, W.A. Adeagbo, S.K. Nayak, W. Hergert, A. Ernst, M. Hoffmann
Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires

J. Phys.: Condens. Matter 27(25), 256002:1-6 (2015)
[ | | IF: 2.721 ]

651
Christian Kranert, Rüdiger Schmidt-Grund, Marius Grundmann
Free charge carriers as origin for redshift of LO modes in wurtzite semiconductors excited above the band gap

J. Raman Spectr. 46(1), 167-170 (2015)
[ | | IF: 2.519 ]

650
Araceli de Pablos-Martin, M. Ebert, C. Patzig, M. Krause, M. Dyrba, P. Miclea, M. Lorenz, M. Grundmann, Th. Höche
Laser Welding of Sapphire Wafers Using a Thin-Film Fresnoite Glass Solder

Microsyst. Technol. 21(5), 1035-1045 (2015)
[ | | IF: 0.952 ]

649
C.P. Dietrich, R. Johne, T. Michalsky, C. Sturm, P. Eastham, H. Franke, M. Lange, M. Grundmann, R. Schmidt-Grund
Parametric relaxation in whispering-gallery mode exciton-polariton condensates

Phys. Rev. B 91(4), 041202(R):1-6 (2015)
[ | | IF: 3.767 ]

648
Abdurashid Mavlonov, Steffen Richter, Holger von Wenckstern, Rüdiger Schmidt-Grund, Jörg Lenzner, Michael Lorenz, Marius Grundmann
Doping efficiency and limits in (Mg,Zn)O:Al,Ga thin films with two-dimensional lateral composition spread

Phys. Status Solidi A 212(12), 2850-2855 (2015)
[ | | IF: 1.648 ]

647
Haoming Wei, Marcus Jenderka, Marius Grundmann, Michael Lorenz
LaNiO₃ films with tunable out-of-plane lattice parameter and their strain-related electrical properties

Phys. Status Solidi A 212(9), 1925-1930 (2015)
[ | | IF: 1.648 ]

646
Heiko Frenzel, Tobias Dörfler, Peter Schlupp, Holger von Wenckstern, Marius Grundmann
Long-throw magnetron sputtering of amorphous Zn-Sn-O-thin films at room temperature

Phys. Status Solidi A 212(7), 1482-1486 (2015)
[ | | IF: 1.648 ]

645
Michael Lorenz, Tobias Weiss, Florian Schmidt, Holger von Wenckstern, Marius Grundmann
Aluminium- and gallium-doped homoepitaxial ZnO thin films: Strain-engineering and electrical performance

Phys. Status Solidi A 212(7), 1440-1447 (2015)
[ | | IF: 1.648 ]

644
Marius Grundmann
Karl Bädeker (1877-1914) and the discovery of transparent conductive materials

Phys. Status Solidi A 212(7), 1409-1426 (2015)
[ | | extra | IF: 1.648 ]

643
Marius Grundmann, Andreas Rahm, Holger von Wenckstern
Transparent Conductive Oxides - Preface
 
Phys. Status Solidi A 212(7), 1408 (1 page) (2015)
[ | | extra | IF: 1.648 ]

642
Special section on Transparent Conductive Oxides
 
Phys. Status Solidi A 212(7), 1407-1498 (2015), Marius Grundmann, Andreas Rahm, Holger von Wenckstern, eds.
[ | | extra | IF: 1.648 ]

641
M. Grundmann
Theory of Semiconductor Solid and Hollow Nano- and Microwires With Hexagonal Cross-Section Under Torsion
 
Phys. Status Solidi B 252(4), 773-785 (2015)
[ | | extra | IF: 1.522 ]

640
Florian Schmidt, Daniel Splith, Stefan Müller, Holger von Wenckstern, Marius Grundmann
Electronic defects in In₂O₃ and In₂O₃:Mg thin films on r-plane sapphire

Phys. Status Solidi B 252(10), 2304-2308 (2015)
[ | | IF: 1.522 ]

639
Holger von Wenckstern, Daniel Splith, Marcus Purfürst, Zhipeng Zhang, Christian Kranert, Stefan Müller, Michael Lorenz, Marius Grundmann
Structural and optical properties of (In,Ga)₂O₃ thin films and characteristics of Schottky contacts thereon

Semic. Sci. Technol. 30(2), 024005:1-7 (2015)
[ | | IF: 2.098 ]

638
Michael Lorenz, Holger Hochmuth, Max Kneiß, Michael Bonholzer, Marcus Jenderka, Marius Grundmann
From high-T_C superconductors to highly correlated Mott insulators - 25 years of pulsed laser deposition of functional oxides in Leipzig

Semic. Sci. Technol. 30(2), 024003:1-10 (2015)
[ | | IF: 2.098 ]

637
Saskia F. Fischer, Marius Grundmann
Semiconductor Functional Oxides
 
Semic. Sci. Technol. 30(2), 020301:1-2 (2015)
[ | link | | extra | IF: 2.098 ]

636
Special issue on semiconductor functional oxides
 
Semic. Sci. Technol. 30(2) (2015), S.F. Fischer, M. Grundmann, eds.
[ | link | extra | IF: 2.098 ]

635
C. Bundesmann, R. Feder, R. Wunderlich, U. Teschner, M. Grundmann, B. Rauschenbach, H. Neumann
Ion beam sputter deposition of Ge films: Influence of process parameters on film properties

Thin Solid Films 589, 487-492 (2015)
[ | | IF: 1.604 ]

634
S. Puttnins, M.S. Hammer, J. Neerken, I.Riedel, F. Daume, A. Rahm, A.Braun, M. Grundmann, T. Unold
Impact of Sodium on the Device Characteristics of Low Temperature-Deposited CIGSe-Solar Cells

Thin Solid Films 582, 85-90 (2015)
[ | | IF: 1.604 ]

633
Marius Grundmann
Bipolar oxide devices - Putting pn-heterostructures to work
 
BuildMoNa Annual Report 2015, p. 26-29 (2015)
[ | link ]

632
David Poppitz, Andriy Lotnyk, Jürgen W. Gerlach, Jörg Lenzner, Marius Grundmann, Bernd Rauschenbach
An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE
Micron 73, 1-8 (2015)
[ | ]

631
Report of The Physics Institutes of Universität Leipzig 2014
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

630
Marius Grundmann
The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 2nd edition, reprint
 
(Beijing World Publishing Corporation, Beijing, 2014), ISBN 978-7-5100-7781-4

629
Marius Grundmann, Robert Karsthof, Holger von Wenckstern
Interface Recombination Current in Type II Heterostructure Bipolar Diodes

ACS Appl. Mater. Interfaces 6(17), 14785-14789 (2014)
[ | | IF: 7.504 ]

628
Tomasz Jakubczyk, Helena Franke, Tomasz Smolenski, Maciej Sciesiek, Wojciech Pacuski, Andrzej Golnik, Rüdiger Schmidt-Grund, Marius Grundmann, Carsten Kruse, Detlef Hommel, Piotr Kossackiy
Inhibition and Enhancement of the Spontaneous Emission of Quantum Dots in Micropillar Cavities with Radial Distributed Bragg Reflectors

ACS Nano 8(10), 9970-9978 (2014)
[ | | IF: 13.334 ]

627
Christian Tessarek, Robert Röder, Tom Michalsky, Sebastian Geburt, Helena Franke, Rüdiger Schmidt-Grund, Martin Heilmann, Björn Hoffmann, Carsten Ronning, Marius Grundmann, Silke Christiansen
Improving the optical properties of self-catalyzed GaN microrods towards whispering gallery mode lasing

ACS Photonics 1(10), 990-997 (2014)
[ | | IF: 5.404 ]

626
T. Michalsky, M. Wille, C.P. Dietrich, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann
Phonon-assisted Lasing in ZnO Microwires at Room Temperature

Appl. Phys. Lett. 105(21), 211106:1-4 (2014)
[ | link | | IF: 3.794 ]

625
R. Schmidt-Grund, H. Krauß, C. Kranert, M. Bonholzer, M. Grundmann
Temperature dependence of the dielectric function in the spectral range (0.5-8.5) eV of an In₂O₃ thin film

Appl. Phys. Lett. 105(11), 111906:1-4 (2014)
[ | | IF: 3.794 ]

624
Max Kneiß, Marcus Jenderka, Kerstin Brachwitz, Michael Lorenz, Marius Grundmann
Modeling the electrical transport in epitaxial undoped and Ni-, Cr-, and W-doped TiO₂ anatase thin films

Appl. Phys. Lett. 105(6), 062103:1-5 (2014)
[ | | IF: 3.794 ]

623
Marko Stölzel, Alexander Müller, Gabriele Benndorf, Michael Lorenz, Marius Grundmann, Christian Patzig, Thomas Höche
Determination of the spontaneous polarization of wurtzite (Mg,Zn)O

Appl. Phys. Lett. 104(19), 192102:1-4 (2014)
[ | | IF: 3.794 ]

622
Friedrich-Leonhard Schein, Markus Winter, Tammo Böntgen, Holger von Wenckstern, Marius Grundmann
Highly rectifying p-ZnCo₂O₄/n-ZnO heterojunction diodes

Appl. Phys. Lett. 104(2), 022104:1-4 (2014)
[ | | IF: 3.794 ]

621
H. von Wenckstern, D. Splith, F. Schmidt, M. Grundmann, O. Bierwagen, J.S. Speck
Schottky contacts to In₂O₃

APL Mater. 2(4), 046104:1-7 (2014)
[ | | IF: 4.323 ]

620
Martin Thunert, Alexander Janot, Helena Franke, Chris Sturm, Tom Michalsky, María Dolores Martín, Luis Viña, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund
Cavity Polariton Condensate in a Disordered Environment

arxiv: 1412.8667:1-12 (2014)
[ | link ]

619
T. Michalsky, M. Wille, C. P. Dietrich, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann
Phonon-Assisted Lasing in ZnO Microwires at Room Temperature

arxiv: 1410.7970 (2014)
[ | link ]

618
Marcus Jenderka, Rüdiger Schmidt-Grund, Marius Grundmann, Michael Lorenz
Electronic excitations and structure of Li₂IrO₃ thin films grown on ZrO₂:Y (001) substrates

arxiv: 1407.3596 (2014)
[ | link ]

617
Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann
Monolithic multichannel ultraviolet photodiodes based on (Mg,Zn)O thin films with continuous composition spreads

IEEE J. Sel. Top. Quantum Electr. 20(6), 3801606:1-6 (2014)
[ | | IF: 4.078 ]

616
Stefan Müller, Holger von Wenckstern, Florian Schmidt, Daniel Splith, Robert Heinold, Martin Allen, Marius Grundmann
Method of choice for fabrication of high-quality ZnO-based Schottky diodes

J. Appl. Phys. 116(19), 194506:1-12 (2014)
[ | | IF: 2.21 ]

615
Florian Schmidt, Stefan Müller, Holger von Wenckstern, Gabriele Benndorf, Rainer Pickenhain, Marius Grundmann
Impact of strain on defects in (Mg,Zn)O thin films

J. Appl. Phys. 116(10), 103703:1-9 (2014)
[ | | IF: 2.21 ]

614
R. Schmidt-Grund, C. Kranert, T. Böntgen, H. von Wenckstern, H. Krauß, M. Grundmann
Dielectric function in the NIR-VUV spectral range of (In_xGa_1-x)₂O₃ thin films

J. Appl. Phys. 116(5), 053510:1-7 (2014)
[ | | IF: 2.21 ]

613
Christian Kranert, Jörg Lenzner, Marcus Jenderka, Michael Lorenz, Holger von Wenckstern, Rüdiger Schmidt-Grund, Marius Grundmann
Lattice parameters and Raman-active phonon modes of (In_xGa_1-x)₂O₃ for x < 0.4

J. Appl. Phys. 116(1), 013505:1-7 (2014)
[ | | IF: 2.21 ]

612
Snigdhatanu Acharya, Sumedha Chouthe, Heinrich Graener, Tammo Böntgen, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann, Gerhard Seifert
Ultrafast dynamics of the dielectric functions of ZnO and BaTiO₃ thin films after intense femtosecond laser excitation

J. Appl. Phys. 115(5), 053508:1-9 (2014)
[ | | IF: 2.21 ]

611
Rolf Böttcher, Andreas Pöppl, Michael Lorenz, Stefan Friedländer, Daniel Spemann, Marius Grundmann
⁵⁵Mn Pulsed ENDOR Spectroscopy of Mn²⁺ Ions in ZnO Thin Films and Single Crystal

J. Magn. Res. 245, 79-86 (2014)
[ | | IF: 2.3 ]

610
Michael Lorenz, Rolf Böttcher, Stefan Friedländer, Andreas Pöppl, Daniel Spemann, Marius Grundmann
Local lattice distortions in oxygen deficient Mn-doped ZnO thin films, probed by electron paramagnetic resonance

J. Mater. Chem. C 2(25), 4947-4956 (2014)
[ | | IF: 7.059 ]

609
Michael Lorenz, Vera Lazenka, Peter Schwinkendorf, Francis Bern, Michael Ziese, Hiwa Modarresi, Alexander Volodin, Margriet van Bael, Kristiaan Temst, Andre Vantomme, Marius Grundmann
Multiferroic BaTiO₃-BiFeO₃ composite thin films and multilayers: Strain engineering and magnetoelectric coupling

J. Phys. D: Appl. Phys. 47(13), 135303:1-10 (2014)
[ | | IF: 2.772 ]

608
Michael Lorenz, Araceli de Pablos-Martin, Christian Patzig, Marko Stölzel, Kerstin Brachwitz, Holger Hochmuth, Marius Grundmann, Thomas Höche
Highly textured fresnoite thin films synthesized by pulsed laser deposition with CO₂ laser direct heating
 
J. Phys. D: Appl. Phys. 47(3), 034013:1-9 (2014)
[ | | extra | IF: 2.772 ]

607
Florian Schmidt, Peter Schlupp, Stefan Müller, Christof Peter Dietrich, Holger von Wenckstern, Marius Grundmann, Robert Heinhold, Hyung-Suk Kim, Martin Ward Allen
A DLTS study of ZnO microwire, thin film and bulk material

Proc. Mat. Res. Soc. 1633, 51-54 (2014)
[ | ]

606
H. von Wenckstern, Z. Zhang, J. Lenzner, F. Schmidt, M. Grundmann
A continuous composition spread approach towards monolithic, wavelength-selective multichannel UV-photo-detector arrays

Proc. Mat. Res. Soc. 1633, 123-129 (2014)
[ | ]

605
P. Schlupp, H. von Wenckstern, M. Grundmann
Amorphous zinc-tin oxide thin films fabricated by pulsed laser deposition at room temperature

Proc. Mat. Res. Soc. 1633, 101-104 (2014)
[ | ]

604
J.L. Cholula-Díaz, J. Barzola-Quiquia, H. Krautscheid, C. Kranert, T. Michalsky, P. Esquinazi, M. Grundmann
Conducting behavior of chalcopyrite-type CuGaS₂ crystals under visible light

Phys. Chem. Chem. Phys. 16(39), 21860-21866 (2014)
[ | | IF: 4.198 ]

603
Daniel Splith, Stefan Müller, Florian Schmidt, Holger von Wenckstern, Johan Janse van Rensburg, Walter E. Meyer, Marius Grundmann
Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga₂O₃ thin films grown by pulsed laser deposition

Phys. Status Solidi A 211(1), 40-47 (2014)
[ | | IF: 1.648 ]

602
Stefan Müller, Holger von Wenckstern, Daniel Splith, Florian Schmidt, Marius Grundmann
Control of the conductivity of Si-doped β-Ga₂O₃ thin films via growth temperature and pressure

Phys. Status Solidi A 211(1), 34-39 (2014)
[ | | IF: 1.648 ]

601
Michael Bonholzer, Michael Lorenz, Marius Grundmann
Layer-by-layer growth of TiN by pulsed laser deposition on in-situ annealed (100) MgO substrates

Phys. Status Solidi A 211(11), 2621-2624 (2014)
[ | | IF: 1.648 ]

600
Peter Schwinkendorf, Michael Lorenz, Holger Hochmuth, Zhipeng Zhang, Marius Grundmann
Interface charging effects in ferroelectric ZnO-BaTiO₃ field-effect transistor heterostructures

Phys. Status Solidi A 211(1), 166-172 (2014)
[ | | IF: 1.648 ]

599
Florian Schmidt, Stefan Müller, Rainer Pickenhain, Holger von Wenckstern, Sebastian Geburt, Carsten Ronning, Marius Grundmann
Defect studies on Ar-implanted ZnO thin films

Phys. Status Solidi B 251(5), 937-941 (2014)
[ | | IF: 1.522 ]

598
M. Grundmann, M. Scheibe, M. Lorenz, J. Bläsing, A. Krost
X-ray multiple diffraction of ZnO substrates and heteroepitaxial thin films

Phys. Status Solidi B 251(4), 850-863 (2014)
[ | | IF: 1.522 ]

597
Christian Kranert, Rüdiger Schmidt-Grund, Marius Grundmann
Raman active phonon modes of cubic In₂O₃

Phys. Status Solidi RRL 8(6), 554-559 (2014)
[ | | IF: 2.58 ]

596
Rüdiger Schmidt-Grund, Steffen Richter, Stefan G. Ebbinghaus, Michael Lorenz, Carsten Bundesmann, Marius Grundmann
Electronic transitions and dielectric function tensor of a YMnO₃ single crystal in the NIR

RSC Adv. 4(63), 33549-33554 (2014)
[ | | IF: 2.562 ]

595
S. Puttnins, S. Jander, A. Wehrmann, G. Benndorf, M. Stölzel, A. Müller, H. von Wenckstern, F. Daume, A. Rahm, M. Grundmann
Breakdown characteristics of flexible Cu(In,Ga)Se₂ solar cells

Sol. Energy Mat. Sol. Cells 120(Part B), 506-511 (2014)
[ | | IF: 4.63 ]

594
F. Schmidt, H. von Wenckstern, O. Breitenstein, R. Pickenhain, M. Grundmann
Low Rate Deep Level Transient Spectroscopy: A powerful tool for defect characterization in wide bandgap semiconductors

Sol. St. Electr. 92, 40-46 (2014)
[ | | IF: 1.482 ]

593
Lennart Fricke, Tammo Böntgen, Jan Lorbeer, Carsten Bundesmann, Rüdiger Schmidt-Grund, Marius Grundmann
An extended Drude model for the in-situ spectroscopic ellipsometry analysis of ZnO thin layers and surface modifications

Thin Solid Films 571(3), 437-441 (2014)
[ | | IF: 1.604 ]

592
Marius Grundmann, Friedrich-Leonard Schein, Robert Karsthof, Peter Schlupp, Holger von Wenckstern
Several Approaches to Bipolar Oxide Diodes With High Rectification
Adv. Sci. Technol. 93, 252-259 (2014)
[ | ]

591
Marius Grundmann
Amorphous semiconductor diodes - A new paradigm
 
BuildMoNa Annual Report 2014, p. 28-31 (2014)
[ | link ]

590
Report of The Physics Institutes of Universität Leipzig 2013
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

589
C.P. Dietrich, M. Grundmann
Pulsed-laser deposition growth of ZnO NWs
 
Wide Band Gap Semiconductor Nanowires: Low-Dimensionality Effects and Growth, Vincent Consonni, Guy Feuillet eds., p. 303-323 (2014) (Wiley-ISTE, 2014), ISBN 978-1-84821-597-9
[ | link | ]

588
Michael Lorenz, Martin Lange, Christian Kranert, Christof P. Dietrich, Marius Grundmann
Optical properties of and optical devices from ZnO-based nanostructures
 
Zinc Oxide Nanostructures: Advances and Applications, p. 43-99 (2014), M. Willander, ed. (Pan Stanford Publishing, Singapore, 2014), ISBN 9789814411332
[ | link | | extra ]

587
Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann
Energy-selective multichannel ultraviolet photodiodes based on (Mg,Zn)O

Appl. Phys. Lett. 103(17), 171111:1-4 (2013)
[ | | IF: 3.794 ]

586
F. Schmidt, S. Müller, H. von Wenckstern, C.P. Dietrich, R. Heinhold, M.W. Allen, M. Grundmann
Comparative Study of Deep Defects in ZnO Microwires, Thin Films and Bulk Single Crystals

Appl. Phys. Lett. 103(6), 062102:1-4 (2013)
[ | | IF: 3.794 ]

585
K. Brachwitz, T. Böntgen, M. Lorenz, M. Grundmann
On the transition point of thermally activated conduction of spinel-type MFe₂O₄ ferrite thin films (M=Zn,Co,Ni)

Appl. Phys. Lett. 102(17), 172104:1-4 (2013)
[ | | IF: 3.794 ]

584
Friedrich-Leonhard Schein, Holger von Wenckstern, Marius Grundmann
Transparent p-CuI/n-ZnO heterojunction diodes

Appl. Phys. Lett. 102(9), 092109:1-4 (2013)
[ | | IF: 3.794 ]

583
Marcus Jenderka, José Barzola-Quiquia, Zhipeng Zhang, Heiko Frenzel, Marius Grundmann, Michael Lorenz
Mott Variable Range Hopping and Weak Antilocalization Effect in Heteroepitaxial Na₂IrO₃ Thin Films

arxiv: 1303.5245 (2013)
[ | link ]

582
Holger von Wenckstern, Zhipeng Zhang, Florian Schmidt, Jörg Lenzner, Holger Hochmuth, Marius Grundmann
Continuous composition spread using pulsed-laser deposition with a single, segmented target

CrystEngComm 15(46), 10020-10027 (2013)
[ | | IF: 3.879 ]

581
Fabian Johannes Klüpfel, Friedrich-Leonhard Schein, Michael Lorenz, Heiko Frenzel, Holger von Wenckstern, Marius Grundmann
Comparison of ZnO-based JFET, MESFET, and MISFET

IEEE Transact. Electr. Dev. 60(6), 1828-1833 (2013)
[ | | IF: 2.062 ]

580
R. Schmidt-Grund, T. Lühmann, T. Böntgen, H. Franke, D. Opper, M. Lorenz, M. Grundmann
Temperature dependent dielectric function in the NIR-VUV spectral range of alumina and yttria stabilized zirconia thin films

J. Appl. Phys. 114(22), 223509:1-8 (2013)
[ | | IF: 2.21 ]

579
T. Böntgen, K. Brachwitz, R. Schmidt-Grund, M. Lorenz, M. Grundmann
Vacuum ultraviolett dielectric function of ZnFe₂O₄ thin films

J. Appl. Phys. 113(7), 073503:1-4 (2013)
[ | | IF: 2.21 ]

578
Alexander Lajn, Holger von Wenckstern, Marius Grundmann, Gerald Wagner, Pedro Barquinha, Elvira Fortunato, Rodrigo Martins
Comparative study of transparent rectifying contacts on semiconducting oxide single crystals and amorphous thin films

J. Appl. Phys. 113(4), 044511:1-13 (2013)
[ | | IF: 2.21 ]

577
J. Zippel, M. Lorenz, M. Lange, M. Stölzel, G. Benndorf, M. Grundmann
Growth control of nonpolar and polar ZnO/Mg_xZn_1-xO quantum wells by pulsed-laser deposition

J. Cryst. Growth 364, 81-87 (2013)
[ | | IF: 1.552 ]

576
M. Lange, C.P. Dietrich, M Lorenz, M. Grundmann
Excitonic and Optical Confinement in Microwire Heterostructures with Non-Polar (Zn,Cd)O/(Mg,Zn)O Multiple Quantum Wells

J. Phys. Chem. C 117(17), 9020-9024 (2013)
[ | | IF: 4.814 ]

575
J. Zippel, M. Lorenz, A. Setzer, M. Rothermel, D. Spemann, P. Esquinazi, M. Grundmann, G. Wagner, R. Denecke, A.A. Timopheev
Defect-induced magnetism in homoepitaxial manganese stabilized zirconia thin films

J. Phys. D: Appl. Phys. 46(27), 275002:1-10 (2013)
[ | | IF: 2.772 ]

574
V.V. Lazenka, M. Lorenz, H. Modarresi, K. Brachwitz, P. Schwinkendorf, T. Böntgen, J. Vanacken, M. Ziese, M. Grundmann, V.V. Moshchalkov
Effect of rare-earth ion doping on multiferroic properties of BiFeO₃ thin films grown epitaxially on SrTiO₃(100)

J. Phys. D: Appl. Phys. 46(17), 175006:1-9 (2013)
[ | | IF: 2.772 ]

573
Michael Lorenz, Christian Schmidt, Gabriele Benndorf, Tammo Böntgen, Holger Hochmuth, Rolf Böttcher, Andreas Pöppl, Daniel Spemann, Marius Grundmann
Degenerate interface layers in epitaxial scandium-doped ZnO thin films

J. Phys. D: Appl. Phys. 46(6), 065311:1-10 (2013)
[ | | IF: 2.772 ]

572
Felix Daume, Stefan Puttnins, Christian Scheit, Hendrik Zachmann, Andreas Rahm, Alexander Braun, Marius Grundmann
Damp heat treatment of Cu(In,Ga)Se₂ solar cells with different sodium content

Materials 6(12), 5478-5489 (2013)
[ | | IF: 2.247 ]

571
Michael Lorenz, Marius Grundmann, Sandra Wickert, Reinhard Denecke
Oxidation state of tungsten oxide thin films used as gate dielectric for zinc oxide based transistors

Proc. Mat. Res. Soc. 1494, 1649:1-4 (2013)
[ | ]

570
C. Kranert, R. Schmidt-Grund, M. Grundmann
Surface- and point-defect-related Raman scattering in wurtzite semiconductors excited above the band gap

New J. Phys. 15(11), 113048:1-22 (2013)
[ | | IF: 4.063 ]

569
J. Zippel, M. Lorenz, G. Wagner, J. Lenzner, M. Grundmann
Martensitic phase transition and subsequent surface corrugation in manganese stabilized zirconia thin films

Phil. Mag. 93(18), 2329-2339 (2013)
[ | | IF: 1.596 ]

568
Marko Stölzel, Alexander Müller, Gabriele Benndorf, Matthias Brandt, Michael Lorenz, Marius Grundmann
Determination of unscreened exciton states in polar ZnO/(Mg,Zn)O quantum wells with strong quantum-confined Stark effect

Phys. Rev. B 88(4), 045315:1-6 (2013)
[ | | IF: 3.767 ]

567
Marcus Jenderka, José Barzola-Quiquia, Zhipeng Zhang, Heiko Frenzel, Marius Grundmann, Michael Lorenz
Mott variable range hopping and weak antilocalization effect in heteroepitaxial Na₂IrO₃ thin films

Phys. Rev. B 88(4), 045111:1-6 (2013)
[ | link | | IF: 3.767 ]

566
Alexander Müller, Marius Grundmann
Tunneling dynamics of excitons in random semiconductor alloys

Phys. Rev. B 87(3), 035134:1-5 (2013)
[ | | IF: 3.767 ]

565
Marius Grundmann, Friedrich-Leonhard Schein, Michael Lorenz, Tammo Böntgen, Jörg Lenzner, Holger von Wenckstern
Cuprous Iodide - a p-type transparent semiconductor: history and novel applications
 
Phys. Status Solidi A 210(9), 1671-1703 (2013)
[ | | extra | IF: 1.648 ]

564
Heiko Frenzel, Alexander Lajn, Marius Grundmann
One decade of fully transparent oxide thin film transistors: fabrication, performance and stability
 
Phys. Status Solidi RRL 7(9), 605-615 (2013)
[ | | extra | IF: 2.58 ]

563
Stefan Puttnins, Sergiu Levcenco, Klaus Schwarzburg, Gabriele Benndorf, Felix Daume, Andreas Rahm, Alexander Braun, Marius Grundmann, Thomas Unold
Effect of Sodium on Material and Device Quality in Low Temperature Deposited Cu(In,Ga)Se₂

Sol. Energy Mat. Sol. Cells 119, 281-286 (2013)
[ | | IF: 4.63 ]

562
A.A. Timopheev, A.M. Azevedo, N.A. Sobolev, K. Brachwitz, M. Lorenz, M. Ziese, P. Esquinazi, M. Grundmann
Magnetic anisotropy of epitaxial zinc ferrite thin films grown by pulsed laser deposition

Thin Solid Films 527, 273-277 (2013)
[ | | IF: 1.604 ]

561
Marius Grundmann
Transparent semiconductors - from materials growth to devices
 
BuildMoNa Annual Report 2013, p. 29-33 (2013)
[ | link ]

560
Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern
TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE
CA 2765981 C (Canadian Intellectual Property Office, 2013)
[ | link ]

559
Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern
Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu ihrer Herstellung und Verwendung
 
EP 2 446 484 B1 (European Patent Office, Munich, 2013)
[ | link ]

558
M. Lorenz, M. Ziese, G. Wagner, P. Esquinazi, M. Grundmann
Exchange bias and magnetoelectric coupling effects in ZnFe₂O₄-BaTiO₃ composite thin films
 
Ext. Abstracts of the Nature Conference "Frontiers in Electronic Materials", Aachen, Germany (Nanosession: Multiferroic Thin Films and Heterostructures), J. Heber, D. Schlomm, Y. Tokura, R. Waser, M. Wuttig, eds., p. 334 (1 page) (2013)
[ | | extra ]

557
S. Puttnins, H. Kempa, S. Englisch, R. Karsthof, F. Daume, A. Rahm, A. Braun, M. Grundmann
Voltage Dependent Photocurrent in Low-Temperature Deposited CIGSe Solar Cells
Proc. 28th European Photovoltaic Solar Energy Conference and Exhibition, p. 2438-2442 (2013)
[ | ]

556
F. Daume, A. Rahm, A. Braun, M. Grundmann
Sodium in the Degradation Process of Cu(In,Ga)Se₂ Solar Cells
Proc. 28th European Photovoltaic Solar Energy Conference and Exhibition, p. 2192-2198 (2013)
[ | ]

555
Report of The Physics Institutes of Universität Leipzig 2012
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

554
Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern
TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE
US 8,445,904 B2 (United States Patent, 2013)
[ | link ]

553
M. Lorenz, A. Reinhardt, H. von Wenckstern, M. Grundmann
Design rules of (Mg,Zn)O-based thin-film transistors with high-κ WO₃ dielectric gates

Appl. Phys. Lett. 101(18), 183502:1-4 (2012)
[ | | IF: 3.794 ]

552
Christof Peter Dietrich, Martin Lange, Tammo Böntgen, Marius Grundmann
The corner effect in hexagonal whispering gallery microresonators

Appl. Phys. Lett. 101(14), 141116:1-5 (2012)
[ | | IF: 3.794 ]

551
R. Heinhold, H.-S. Kim, F. Schmidt, H. von Wenckstern, M. Grundmann, R.J. Mendelsberg, R.J. Reeves, S.M. Durbin, M.W. Allen
Optical and defect properties of hydrothermal ZnO with low lithium contamination

Appl. Phys. Lett. 101(6), 062105:1-4 (2012)
[ | | IF: 3.794 ]

550
Florian Schmidt, Holger von Wenckstern, Daniel Spemann, Marius Grundmann
On the radiation hardness of (Mg,Zn)O PLD thin films

Appl. Phys. Lett. 101(1), 012103:1-4 (2012)
[ | | IF: 3.794 ]

549
Christof Peter Dietrich, Martin Lange, Marko Stölzel, Marius Grundmann
Microwire (Mg,Zn)O/ZnO and (Mg,Zn)O/(Cd,Zn)O non-polar quantum well heterostructures for cavity applications

Appl. Phys. Lett. 100(3), 031110:1-4 (2012)
[ | | IF: 3.794 ]

548
Michael Lorenz, Michael Ziese, Gerald Wagner, Jörg Lenzner, Christian Kranert, Kerstin Brachwitz, Holger Hochmuth, Pablo Esquinazi, Marius Grundmann
Exchange bias and magnetoelectric coupling effects in ZnFe₂O₄-BaTiO₃ composite thin films

CrystEngComm 14(20), 6477-6486 (2012)
[ | link | | IF: 3.879 ]

547
S. Müller, H. von Wenckstern, O. Breitenstein, J. Lenzner, M. Grundmann
Microscopic identification of hot spots in multi-barrier Schottky contacts on pulsed laser deposition grown zinc oxide thin films

IEEE Transact. Electr. Dev. 59(3), 536-541 (2012)
[ | | IF: 2.062 ]

546
Friedrich-Leonhard Schein, Holger von Wenckstern, Heiko Frenzel, Marius Grundmann
ZnO-based n-channel junction field-effect transistor with room-temperature fabricated p-type ZnCo₂O₄-gate

IEEE Electron Device Letters 33(5), 676-678 (2012)
[ | | IF: 2.789 ]

545
M. Lange, C.P. Dietrich, K. Brachwitz, T. Böntgen, M. Lorenz, M. Grundmann
(Zn,Cd)O thin films for the application in heterostructures: structural and optical properties

J. Appl. Phys. 112(10), 103517:1-6 (2012)
[ | | IF: 2.21 ]

544
Marko Stölzel, Johannes Kupper, Matthias Brandt, Alexander Müller, Gabriele Benndorf, Michael Lorenz, Marius Grundmann
Electronic and optical properties of ZnO/(Mg,Zn)O quantum wells with and without a distinct QCSE

J. Appl. Phys. 111(6), 063701:1-10 (2012)
[ | | IF: 2.21 ]

543
M. Noltemeyer, F. Bertram, Th. Hempel, B. Bastek, A. Polyakov, J. Christen, M. Brandt, M. Lorenz, M. Grundmann
Excitonic Transport in ZnO

J. Mat. Res. 27(17), 2225-2231 (2012)
[ | | IF: 1.713 ]

542
Steve Durbin, Tim Veal, Marius Grundmann, Jamie Phillips
Focus Issue on Oxide Semiconductors, Introduction
 
J. Mat. Res. 27(17), 2179 (1 page) (2012) (Materials Research Society, Warrendale, PA, 2012)
[ | | extra | IF: 1.713 ]

541
Focus Issue on Oxide Semiconductors
 
J. Mat. Res. 27(17) (2012), Steve Durbin, Tim Veal, Marius Grundmann, Jamie Phillips, eds. (Materials Research Society, Warrendale, PA, 2012)
[ | extra | IF: 1.713 ]

540
Helena Franke, Chris Sturm, Rüdiger Schmidt-Grund, Gerald Wagner, Marius Grundmann
Ballistic propagation of exciton-polariton condensates in a ZnO-based microcavity

New J. Phys. 14(1), 013037:1-12 (2012)
[ | | IF: 4.063 ]

539
M. Lange, J. Kupper, C.P. Dietrich, M. Brandt, M. Stölzel, G. Benndorf, M. Lorenz, M. Grundmann
Exciton localization and phonon sidebands in polar ZnO/MgZnO quantum wells

Phys. Rev. B 86(4), 045318:1-7 (2012)
[ | | IF: 3.767 ]

538
M. Grundmann, C.P. Dietrich
Whispering gallery modes in deformed hexagonal resonators
 
Phys. Status Solidi B 249(5), 871-879 (2012)
[ | | extra | IF: 1.522 ]

537
M. Brandt, M. Bonholzer, M. Stölzel, G. Benndorf, D. Spemann, M. Lorenz, M. Grundmann
Electrical transport in strained Mg_xZn_1-xO:P thin films grown by pulsed laser deposition on ZnO (000-1)

Phys. Status Solidi B 249(1), 82-90 (2012)
[ | | IF: 1.522 ]

536
M. Schmidt, M. Ellguth, R. Karsthof, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, F.C.C. Ling
On the T2 trap in zinc oxide thin films

Phys. Status Solidi B 249(3), 588-595 (2012)
[ | | IF: 1.522 ]

535
Jan Zippel, Michael Lorenz, Gabriele Benndorf, Marius Grundmann
Persistent layer-by-layer growth for pulsed-laser homoepitaxy of (000-1) ZnO

Phys. Status Solidi RRL 6(11), 433-435 (2012)
[ | | IF: 2.58 ]

534
Martin Lange, Christof P. Dietrich, Kerstin Brachwitz, Marko Stölzel, Michael Lorenz, Marius Grundmann
Visible emission from ZnCdO/ZnO multiple quantum wells

Phys. Status Solidi RRL 6(1), 31-33 (2012)
[ | | IF: 2.58 ]

533
Martin Noltemeyer, Frank Bertram, Thomas Hempel, Barbara Bastek, Juergen Christen, Matthias Brandt, Michael Lorenz, Marius Grundmann
Excitonic transport in ZnO

Proc. SPIE 8263, 82630X:1-7 (2012)
[ | ]

532
Matthias Schmidt, Holger von Wenckstern, Rainer Pickenhain, Marius Grundmann
On the investigation of electronic defect states in ZnO thin films by space charge spectroscopy with optical excitation

Sol. St. Electr. 75, 48-54 (2012)
[ | | IF: 1.482 ]

531
J.P. Richters, J. Kalden, M. Gnauck, C. Ronning, C.P. Dietrich, H. von Wenckstern, M. Grundmann, J. Gutowski, T. Voss
Modal gain and its diameter dependence in single ZnO micro- and nanowires

Semic. Sci. Technol. 27(1), 015005:1-5 (2012)
[ | | IF: 2.098 ]

530
Marius Grundmann
Quantum optics and round corners in Leipzig
 
BuildMoNa Annual Report 2012, p. 33-37 (2012)
[ | link ]

529
H. von Wenckstern, R. Schmidt-Grund, C. Bundesmann, A. Müller, C.P. Dietrich, M. Stölzel, M. Lange, M. Grundmann
The (Mg,Zn)O Alloy
 
Handbook of Zinc Oxide and Related Materials, Vol. 1 Materials, p. 257-320 (2012), Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855706
[ | link | | extra ]

528
Heiko Frenzel, Michael Lorenz, Friedrich-L. Schein, Alexander Lajn, Fabian J. Klüpfel, Tobias Diez, Holger von Wenckstern, Marius Grundmann
Metal-semiconductor field-effect transistors and integrated circuits based on ZnO and related oxides
 
Handbook of Zinc Oxide and Related Materials, Vol. 2 Devices and Nano-Engineering, p. 369-434 (2012), Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855744
[ | link | | extra ]

527
S. Puttnins, M. Purfürst, M. Hartung, H.-K. Lee, F. Daume, L. Hartmann, A. Rahm, A. Braun, M. Grundmann
The Influence of Sodium on CIGSe Solar Cell Breakdown Characteristics
Proc. 27th European Photovoltaic Solar Energy Conference and Exhibition, p. 2219-2221 (2012)
[ | ]

526
Report of The Physics Institutes of Universität Leipzig 2011
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

525
Michael Lorenz, Holger von Wenckstern, Marius Grundmann
Tungsten oxide as gate dielectric for highly transparent and temperature-stable zincoxide-based thin-film transistors

Adv. Mater. 23(45), 5383-5386 (2011)
[ | | IF: 18.96 ]

524
C. Kranert, T. Böntgen, R. Schmidt‐Grund, M. Brandt, S. Schöche, C. Sturm, H. Hochmuth, M. Lorenz, M. Grundmann
Structural properties of BaTiO₃/ZnO heterostructures and interfaces

AIP Conf. Proc. 1399, 451-452 (2011) (AIP Publishing LLC, New York)
[ | ]

523
C. Sturm, H. Hilmer, R. Schmidt‐Grund, M. Grundmann
Occupation behaviour of the lower exciton-polariton branch in ZnO-based microresonators

AIP Conf. Proc. 1399, 447-448 (2011) (AIP Publishing LLC, New York)
[ | ]

522
C.P. Dietrich, M. Grundmann
Comment on "Exciton-polariton microphotoluminescence and lasing from ZnO whispering-gallery mode microcavities" [Appl. Phys. Lett. 98, 161110 (2011)]

Appl. Phys. Lett. 99(13), 136101 (1 page) (2011)
[ | link | | extra | IF: 3.794 ]

521
Zh. Zhang, H. von Wenckstern, M. Schmidt, M. Grundmann
Wavelength selective metal-semiconductor-metal photodetectors based on (Mg,Zn)O-heterostructures

Appl. Phys. Lett. 99(8), 083502:1-3 (2011)
[ | | IF: 3.794 ]

520
C.P. Dietrich, M. Lange, F.J. Klüpfel, H. von Wenckstern, R. Schmidt-Grund, M. Grundmann
Strain distribution in bent ZnO microwires

Appl. Phys. Lett. 98(3), 031105:1-3 (2011)
[ | link | | IF: 3.794 ]

519
Michael Bachmann, Karsten Goede, Annette G. Beck-Sickinger, Marius Grundmann, Anders Irbäck, Wolfhard Janke
Microscopic Mechanism of Specific Peptide Adhesion to Semiconductor Substrates

arxiv: 1107.1208 (2011)
[ | link ]

518
Alexander Müller, Michael Lorenz, Kerstin Brachwitz, Jörg Lenzner, Kai Mittwoch, Wolfgang Skorupa, Marius Grundmann, Thomas Höche
Fresnoite Thin Films grown by Pulsed Laser Deposition: Photoluminescence and Laser Crystallization
 
CrystEngComm 13(21), 6377-6385 (2011)
[ | | extra | IF: 3.879 ]

517
A. Lajn, T. Diez, F. Schein, H. Frenzel, H. von Wenckstern, M. Grundmann
Light and temperature stability of fully transparent ZnO-based inverter circuits

IEEE Electron Device Letters 32(4), 515-517 (2011)
[ | | IF: 2.789 ]

516
J. Zippel, M. Lorenz, J. Lenzner, M. Grundmann, T. Hammer, A. Jacquot, H. Böttner
Electrical transport and optical emission of Mn_xZr_1-xO₂ (0<x<0.5) thin films

J. Appl. Phys. 110(4), 043706:1-6 (2011)
[ | | IF: 2.21 ]

515
C.C. Dey, S. Dey, S.C. Bedi, S.K. Das, M. Lorenz, M. Grundmann, J. Vogt, T. Butz
Hafnium Oxide Thin Films Studied by Time Differential Perturbed Angular Correlations

J. Appl. Phys. 109(11), 113918:1-6 (2011)
[ | | IF: 2.21 ]

514
F.J. Klüpfel, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann
Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors

J. Appl. Phys. 109(7), 074515:1-4 (2011)
[ | | IF: 2.21 ]

513
C.P. Dietrich, M. Brandt, M. Lange, J. Kupper, T. Böntgen, H. von Wenckstern, M. Grundmann
Defect properties of ZnO and ZnO:P microwires

J. Appl. Phys. 109(1), 013712:1-5 (2011)
[ | | IF: 2.21 ]

512
M. Lange, C.P. Dietrich, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, M. Grundmann
Thermal stability of ZnO/ZnCdO/ZnO double heterostructures grown by pulsed laser deposition

J. Cryst. Growth 328(1), 13-17 (2011)
[ | | IF: 1.552 ]

511
A. Lajn, M. Schmidt, H. von Wenckstern, M. Grundmann
Erratum: Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO

J. Electr. Mat. 40(4), 477 (1 page) (2011)
[ | | IF: 1.635 ]

510
A. Lajn, M. Schmidt, H. von Wenckstern, M. Grundmann
Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO

J. Electr. Mat. 40, 473-476 (2011)
[ | | IF: 1.635 ]

509
M. Lange, C.P. Dietrich, J. Zúñiga-Pérez, H. von Wenckstern, M. Lorenz, M. Grundmann
MgZnO/ZnO quantum well nanowire heterostructures with large confinement energies

J. Vac. Sci. Technol. A 29(3), 03A104:1-5 (2011)
[ | | IF: 1.432 ]

508
C.P. Dietrich, M. Lange, C. Sturm, R. Schmidt-Grund, M. Grundmann
One- and two-dimensional cavity modes in ZnO microwires

New J. Phys. 13(10), 103021:1-9 (2011)
[ | | IF: 4.063 ]

507
Chris Sturm, Helena Hilmer, Rüdiger Schmidt-Grund, Marius Grundmann
Exciton-polaritons in a ZnO-based microcavity: polarization dependence and non-linear occupation

New J. Phys. 13(3), 033014:1-17 (2011)
[ | | IF: 4.063 ]

506
C. Sturm, H. Hilmer, B. Rheinländer, R. Schmidt-Grund, M. Grundmann
Cavity-photon dispersion in one-dimensional confined microresonators with an optically anisotropic cavity material

Phys. Rev. B 83(20), 205301:1-12 (2011)
[ | | IF: 3.767 ]

505
M. Ellguth, M. Schmidt, R. Pickenhain, M. Grundmann
Characterization of point defects in ZnO thin films by Optical Deep Level Transient Spectroscopy

Phys. Status Solidi B 248(4), 941-949 (2011)
[ | | IF: 1.522 ]

504
M. Grundmann
Formation of Epitaxial Domains: Unified Theory and Survey of Experimental Results
 
Phys. Status Solidi B 248(4), 805-824 (2011) [Editor's Choice]
[ | link | | extra | IF: 1.522 ]

503
Matthias Schmidt, Kerstin Brachwitz, Florian Schmidt, Martin Ellguth, Holger von Wenckstern, Rainer Pickenhain, Marius Grundmann, Gerhard Brauer, Wolfgang Skorupa
Nickel-related defects in ZnO - A deep-level transient spectroscopy and photo-capacitance study

Phys. Status Solidi B 248(8), 1949-1955 (2011)
[ | | IF: 1.522 ]

502
M. Lorenz, M. Brandt, K. Mexner, K. Brachwitz, M. Ziese, P. Esquinazi, H. Hochmuth, M. Grundmann
Ferrimagnetic ZnFe₂O₄ thin films on SrTiO₃ single crystals with highly tunable electrical conductivity

Phys. Status Solidi RRL 5(12), 438-440 (2011)
[ | | IF: 2.58 ]

501
M. Brandt, H. von Wenckstern, M. Stölzel, H. Hochmuth, M. Lorenz, M. Grundmann
Semiconducting oxide heterostructures

Semic. Sci. Technol. 26(1), 014040:1-9 (2011)
[ | | IF: 2.098 ]

500
T. Böntgen, S. Schöche, R. Schmidt-Grund, C. Sturm, M. Brandt, H. Hochmuth, M. Lorenz, M. Grundmann
Optical properties of BaTiO₃/ZnO heterostructures under the effect of an applied bias

Thin Solid Films 519(9), 2933-2935 (2011)
[ | | IF: 1.604 ]

499
R. Schmidt-Grund, P. Kühne, C. Czekalla, D. Schumacher, C. Sturm, M. Grundmann
Determination of the refractive index of single crystal bulk samples and micro-structures

Thin Solid Films 519(9), 2777-2781 (2011)
[ | | IF: 1.604 ]

498
T. Höche, M. Lorenz, A. Müller, M. Grundmann, K. Mittwoch
Laser patterning of thin films for luminescence applications
18th European Microelectronics and Packaging Conference (EMPC), p. 1-5 (2011), ISBN 978-1-4673-0694-2
[ | link ]

497
Marius Grundmann
Oxide-based novel electronic and photonic building blocks
 
BuildMoNa Annual Report 2011, p. 36-39 (2011)
[ | link ]

496
H. Frenzel, A. Lajn, H. von Wenckstern, M. Grundmann
Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu seiner Herstellung und Verwendung
 
DE 10 2009 030 045 B3 (Deutsches Patent- und Markenamt, München, 2011)
[ | link ]

495
Michael Lorenz, Holger Hochmuth, Christoph Grüner, Helena Hilmer, Alexander Lajn, Daniel Spemann, Matthias Brandt, Jan Zippel, Rüdiger Schmidt-Grund, Holger von Wenckstern, Marius Grundmann
Oxide thin film heterostructures on large area, with flexible doping, low dislocation density and abrupt interfaces - grown by Pulsed Laser Deposition
 
Laser Chemistry 2011, 140976:1-27 (2011) (Hindawi, New York, 2011)
[ | ]

494
F. Daume, C. Scheit, S. Puttnins, A. Rahm, M. Grundmann
Application of Series Resistance Imaging Techniques To Cu(In,Ga)Se₂ Solar Cells
Proc. 26th European Photovoltaic Solar Energy Conference and Exhibition, p. 2955-2957 (2011)
[ | ]

493
S. Puttnins, S. Jander, K. Pelz, S. Heinker, F. Daume, A. Rahm, A. Braun, M. Grundmann
The Influence of Front Contact and Buffer Layer Properties on CIGSe Solar Cell Breakdown Characteristics
Prof. 26th European Photovoltaic Solar Energy Conference and Exhibition, p. 2432-2434 (2011)
[ | ]

492
Report of The Physics Institutes of Universität Leipzig 2010
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

491
Marius Grundmann
The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 2nd edition
 
(Springer, Heidelberg, 2010), ISBN 978-3-642-13883-6
[ | link | | extra ]

490
Marius Grundmann
Nanooptik
(euroforum fachwissen/IIR, 2010)
[ | link ]

489
M. Bachmann, K. Goede, A.G. Beck-Sickinger, M. Grundmann, A. Irbäck, W. Janke
Mikroskopischer Mechanismus der spezifischen Adhäsion von Peptiden an Halbleitersubstraten

Angew. Chemie 122(49), 9721-9724 (2010)
[ | | extra ]

488
M. Bachmann, K. Goede, A.G. Beck-Sickinger, M. Grundmann, A. Irbäck, W. Janke
Microscopic Mechanism of Specific Peptide Adhesion to Semiconductor Substrates

Angew. Chemie Int. Ed. 49(49), 9530-9533 (2010)
[ | | extra | IF: 13.734 ]

487
H. Frenzel, A. Lajn, H. von Wenckstern, M. Lorenz, F. Schein, Zh. Zhang, M. Grundmann
Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and their Application in Transparent Integrated Circuits
 
Adv. Mater. 22(47), 5332-5349 (2010)
[ | | extra | IF: 18.96 ]

486
M. Lorenz, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann, P. Barquinha, R. Martins, E. Fortunato
Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films

Appl. Phys. Lett. 97(24), 243506:1-3 (2010)
[ | | IF: 3.794 ]

485
D. Lausch, K. Petter, R. Bakowskie, C. Czekalla, J. Lenzner, H. von Wenckstern, M. Grundmann
Identification of Pre-Breakdown Mechanism of Silicon Solar Cells at Low Reverse Voltages

Appl. Phys. Lett. 97(7), 073506:1-3 (2010)
[ | | IF: 3.794 ]

484
M. Brandt, M. Lange, M. Stölzel, A. Müller, G. Benndorf, J. Zippel, J. Lenzner, M. Lorenz, M. Grundmann
Control of interface abruptness of polar MgZnO/ZnO quantum wells grown by pulsed laser deposition

Appl. Phys. Lett. 97(5), 052101:1-3 (2010)
[ | | IF: 3.794 ]

483
H. Frenzel, F. Schein, A. Lajn, H. von Wenckstern, M. Grundmann
High-gain integrated inverters based on ZnO MESFET technology

Appl. Phys. Lett. 96(11), 113502:1-3 (2010)
[ | | IF: 3.794 ]

482
H. Frenzel, A. Lajn, H. von Wenckstern, M. Grundmann
Ultrathin gate-contacts for MESFET devices: An alternative approach in transparent electronics

J. Appl. Phys. 107(11), 114515:1-6 (2010)
[ | | IF: 2.21 ]

481
A.O. Ankiewicz, J.S. Martins, M.C. Carmo, M. Grundmann, S. Zhou, H. Schmidt, N.A. Sobolev
Ferromagnetic resonance on metal nanocrystals in Fe and Ni implanted ZnO

J. Appl. Phys. 107(9), 09B518:1-3 (2010)
[ | | IF: 2.21 ]

480
M. Lange, C. Dietrich, C. Czekalla, J. Zippel, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, M. Grundmann
Luminescence Properties of ZnO/Zn_1-xCd_xO/ZnO double heterostructures

J. Appl. Phys. 107(9), 093530:1-8 (2010)
[ | | IF: 2.21 ]

479
A. Müller, M. Stölzel, G. Benndorf, M. Lorenz, M. Grundmann
Origin of the near-band-edge luminescence in Mg_xZn_1-xO

J. Appl. Phys. 107(1), 013704:1-6 (2010)
[ | | IF: 2.21 ]

478
S. Lautenschlaeger, S. Eisermann, M.N. Hofmann, U. Roemer, M. Pinnisch, A. Laufer, B.K. Meyer, H. von Wenckstern, A. Lajn, F. Schmidt, M. Grundmann, J. Blaesing, A. Krost
Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers

J. Cryst. Growth 312(14), 2078-2082 (2010)
[ | | IF: 1.552 ]

477
A. Lajn, H. von Wenckstern, G. Benndorf, C.P. Dietrich, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films

J. Electr. Mat. 39, 595-600 (2010)
[ | | IF: 1.635 ]

476
H. von Wenckstern, K. Brachwitz, M. Schmidt, C.P. Dietrich, M. Ellguth, M. Stölzel, M. Lorenz, M. Grundmann
The E3 defect in Mg_xZn_1-xO

J. Electr. Mat. 39, 584-588 (2010)
[ | | IF: 1.635 ]

475
J. Chai, R.J. Mendelsberg, R.J. Reeves, J. Kennedy, H. von Wenckstern, M. Grundmann, K. Doyle, T.H. Meyers, S.M. Durbin
Identification of a deep acceptor level in ZnO due to silver doping

J. Electr. Mat. 39, 577-583 (2010)
[ | | IF: 1.635 ]

474
H. von Wenckstern, S. Müller, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Dielectric passivation of ZnO-based Schottky diodes

J. Electr. Mat. 39, 559-562 (2010)
[ | | IF: 1.635 ]

473
Q.Y. Xu, S.Q. Zhou, D. Bürger, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
Electrical control of magnetoresistance in highly insulating Co-doped ZnO

Jpn. J. Appl. Phys. 49(4R), 043002:1-4 (2010)
[ | | IF: 1.067 ]

472
J. Zippel, S. Heitsch, M. Stölzel, A. Müller, H. von Wenckstern, G. Benndorf, M. Lorenz, H. Hochmuth, M. Grundmann
Optical properties of homo- and heteroepitaxial ZnO/Mg_xZn_1-xO quantum wells grown by pulsed laser deposition

J. Lumin. 130(3), 520-526 (2010)
[ | | IF: 2.144 ]

471
S. Acharya, S. Chuothe, C. Sturm, H. Graener, R. Schmidt-Grund, M. Grundmann, G. Seifert
Charge carrier dynamics of ZnO and ZnO-BaTiO₃ thin films
J. Phys. Conf. Ser. 210, 012048:1-4 (2010)
[ | ]

470
C. Sturm, H. Hilmer, R. Schmidt-Grund, M. Grundmann
Polarization behavior of the exciton-polariton emission of ZnO-based microresonators

Proc. Mat. Res. Soc. 1208E, 1208-O18-08:1-6 (2010)
[ | ]

469
H. von Wenckstern, Z.P. Zhang, M. Lorenz, C. Czekalla, H. Frenzel, A. Lajn, M. Grundmann
Light beam induced current measurements on ZnO Schottky diodes and MESFETs

Proc. Mat. Res. Soc. 1201, 1201-H04-02:1-6 (2010)
[ | ]

468
C.P. Dietrich, A. Müller, M. Stölzel, M. Lange, G. Benndorf, H. von Wenckstern, M. Grundmann
Bound-exciton recombination in Mg_xZn_1-xO thin films

Proc. Mat. Res. Soc. 1201, 1201-H03-08:1-6 (2010)
[ | ]

467
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern, F. Schein, M. Lorenz
ZnO-based MESFET Devices

Proc. Mat. Res. Soc. 1201, 1201-H01-01:1-5 (2010)
[ | ]

466
C.P. Dietrich, M. Lange, G. Benndorf, J. Lenzner, M. Lorenz, M. Grundmann
Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys

New J. Phys. 12(3), 033030:1-10 (2010)
[ | | IF: 4.063 ]

465
M. Mäder, S. Perlt, T. Höche, H. Hilmer, M. Grundmann, B. Rauschenbach
Gold nanostructure matrices by diffraction mask-projection laser ablation: extension to previously inaccessible substrates

Nanotechnology 21(17), 175304:1-5 (2010)
[ | | IF: 3.842 ]

464
Jan Zippel, Michael Lorenz, Annette Setzer, Gerald Wagner, Nikolai Sobolev, Pablo Esquinazi, Marius Grundmann
Defect induced ferromagnetism in undoped and Mn-doped zirconia thin films

Phys. Rev. B 82(12), 125209:1-5 (2010)
[ | | IF: 3.767 ]

463
Venkata M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, H. Schmidt, N. Ianno, M. Schubert
Interface polarization coupling in piezoelectric-semiconductor ferroelectric heterostructures

Phys. Rev. B 81(19), 195307:1-12 (2010)
[ | | IF: 3.767 ]

462
M. Brandt, H. von Wenckstern, G. Benndorf, M. Lange, C.P. Dietrich, C. Kranert, C. Sturm, R. Schmidt-Grund, H. Hochmuth, M. Lorenz, M. Grundmann, M.R. Wagner, M. Alic, C. Nenstiel, A. Hoffmann
Identification of a donor-related recombination channel in ZnO thin films

Phys. Rev. B 81(7), 073306:1-4 (2010)
[ | | IF: 3.767 ]

461
Marius Grundmann, Tammo Böntgen, Michael Lorenz
The Occurrence of Rotation Domains in Heteroepitaxy

Phys. Rev. Lett. 105(14), 146102:1-4 (2010)
[ | | IF: 7.645 ]

460
W. Anwand, G. Brauer, T.E. Cowan, V. Heera, H. Schmidt, W. Skorupa, H. von Wenckstern, G. Benndorf, M. Grundmann
Structural characterization of H plasma-doped ZnO single crystals by Hall measurements and photoluminescence studies

Phys. Status Solidi A 207(11), 2426-2431 (2010)
[ | | IF: 1.648 ]

459
M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, H. von Wenckstern
Transparent Semiconducting Oxides: Materials and Devices
 
Phys. Status Solidi A 207(6), 1437-1449 (2010)
[ | link | | extra | IF: 1.648 ]

458
J. Zippel, M. Stölzel, A. Müller, G. Benndorf, M. Lorenz, H. Hochmuth, M. Grundmann
Electronic coupling in ZnO/Mg_xZn_1-xO double quantum wells grown by pulsed laser deposition

Phys. Status Solidi B 247(2), 398-404 (2010)
[ | | IF: 1.522 ]

457
O. Albrecht, R. Zierold, C. Patzig, J. Bachmann, C. Sturm, B. Rheinländer, M. Grundmann, D. Görlitz, B. Rauschenbach, K. Nielsch
Magnetic tubular nanostructures based on glancing-angle deposited templates and atomic layer deposition

Phys. Status Solidi B 247(6), 1365-1371 (2010)
[ | | IF: 1.522 ]

456
R. Schmidt-Grund, H. Hilmer, A. Hinkel, C. Sturm, B. Rheinländer, V. Gottschalch, M. Lange, J. Zúñiga-Pérez, M. Grundmann
Two-dimensional confined photonic wire resonators - strong light-matter coupling

Phys. Status Solidi B 247(6), 1351-1364 (2010)
[ | | IF: 1.522 ]

455
R. Kaden, G. Wagner, C. Strum, R. Schmidt-Grund, H. von Wenckstern, A. Prager, K. Bente, M. Grundmann
Synthesis and physical properties of cylindrite micro tubes and lamellae

Phys. Status Solidi B 247(6), 1335-1350 (2010)
[ | | IF: 1.522 ]

454
C. Czekalla, T. Nobis, A. Rahm, B. Cao, J. Zúñiga-Pérez, C. Sturm, R. Schmidt-Grund, M. Lorenz, M. Grundmann
Whispering gallery modes in ZnO nano- and microwires

Phys. Status Solidi B 247(6), 1282-1293 (2010)
[ | | IF: 1.522 ]

453
M. Lorenz, A. Rahm, B. Cao, J. Zúñiga-Pérez, E.M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, M. Grundmann
Self-organized growth of ZnO-based nano- and microstructures

Phys. Status Solidi B 247(6), 1265-1281 (2010)
[ | | IF: 1.522 ]

452
M. Grundmann
Architecture of nano- and microdimensional building blocks

Phys. Status Solidi B 247(6), 1257-1264 (2010)
[ | | IF: 1.522 ]

451
Scientific report of the Forschergruppe 522
 
Phys. Status Solidi B 247(6), 1257-1392 (2010), M. Grundmann, ed.
[ | extra | IF: 1.522 ]

450
M. Schmidt, M. Ellguth, F. Schmidt, Th. Lüder, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa
Defects in a nitrogen-implanted ZnO thin film

Phys. Status Solidi B 247(5), 1220-1226 (2010)
[ | | IF: 1.522 ]

449
C. Scarlat, K.M. Mok, S. Zhou, M. Vinnichenko, M. Lorenz, M. Grundmann, M. Helm, M. Schubert, H. Schmidt
Voigt effect measurement on PLD grown NiO thin films

Phys. Status Solidi C 7(2), 334-337 (2010)
[ | ]

448
G. Zimmermann, M. Lange, B. Cao, M. Lorenz, M. Grundmann
Resistivity control of ZnO nanowires by Al-doping

Phys. Status Solidi RRL 4(3-4), 82-84 (2010)
[ | | IF: 2.58 ]

447
H. Hilmer, C. Sturm, R. Schmidt-Grund, B. Rheinländer, M. Grundmann
Observation of strong light-matter coupling by spectroscopic ellipsometry

Superlatt. Microstr. 47(1), 19-23 (2010)
[ | | IF: 1.564 ]

446
C.P. Dietrich, M. Lange, G. Benndorf, H. von Wenckstern, M. Grundmann
Donor-acceptor pair recombination in non-stoichiometric ZnO thin films

Sol. St. Comm. 150(7-8), 379-382 (2010)
[ | | IF: 1.534 ]

445
M. Lorenz, M. Brandt, M. Lange, G. Benndorf, H. von Wenckstern, D. Klimm, M. Grundmann
Homoepitaxial Mg_xZn_1-xO (0 ≤ x ≤ 0.22) thin films grown by pulsed laser deposition

Thin Solid Films 518(16), 4623-4629 (2010)
[ | | IF: 1.604 ]

444
Marius Grundmann
ZnO-based alloys for nano-scale optoelectronic devices
 
BuildMoNa Annual Report 2010, p. 34-39 (2010)
[ | link ]

443
B. Cao, J. Zúñiga-Pérez, C. Czekalla, H. Hilmer, J. Lenzner, N. Boukos, A. Travlos, M. Lorenz, M. Grundmann
Tuning the lateral density of ZnO nanowire arrays and its application as physical templates for radial nanowire heterostructures
J. Mat. Chem. 20(19), 3848-3854 (2010)
[ | ]

442
B.Q. Cao, M. Lorenz, G. Zimmermann, C. Czekalla, M. Brandt, H. von Wenckstern, M. Grundmann
p-type Phosphorus Doped ZnO Wires for Optoelectronic Applications
 
Nanowires, p. 117-132 (2010), P. Prete, ed., ISBN 978-953-7619-79-4
[ | | extra ]

441
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern
TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE
PCT Application WO 2010/149616 A1
[ | link ]

440
S. Puttnins, H. Zachmann, A. Rahm, G. Benndorf, M. Grundmann
Quantum Efficiency Analysis of Ion Beam Assisted Deposition of Cu(In,Ga)Se₂ Solar Cells on Flexible Substrates
Proc. 25th European Photovoltaic Solar Energy Conference and Exhibition, p. 3369-3371 (2010)
[ | ]

439
Report of The Physics Institutes of Universität Leipzig 2009
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

438
H. Frenzel, M. Lorenz, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Grundmann
ZnO-based metal-semiconductor field-effect transistors on glass substrates

Appl. Phys. Lett. 95(15), 153503:1-3 (2009)
[ | | IF: 3.794 ]

437
M. Voora, T. Hofmann, M. Brandt, M. Lorenz, N. Ashkenov, M. Grundmann, M. Schubert
Electrical properties of ZnO-BaTiO₃-ZnO heterostructures with asymmetric interface charge distribution

Appl. Phys. Lett. 95(8), 082902:1-3 (2009)
[ | | IF: 3.794 ]

436
V.M. Voora, T. Hofman, M. Schubert, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov
Resistive hysteresis and interface charge coupling in BaTiO₃-ZnO heterostructures

Appl. Phys. Lett. 94(14), 142904:1-3 (2009)
[ | | IF: 3.794 ]

435
Shengqiang Zhou, K. Potzger, Qingyu Xu, G. Talut, M. Lorenz, W. Skorupa, M. Helm, J. Fassbender, M. Grundmann, H. Schmidt
Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?

arxiv: 0907.3536 (2009)
[ | link ]

434
H. von Wenckstern, J. Zippel, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Two-dimensional electron gases in MgZnO/ZnO heterostructures

Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 99-100 (2009)
[ | ]

433
H. Frenzel, H. von Wenckstern, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Interface effects in ZnO metal-insulator-semiconductor and metal-semiconductor structures

Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 469-470 (2009)
[ | ]

432
R. Schmidt-Grund, C. Sturm, H. Hilmer, J. Sellmann, C. Czekalla, B. Rheinländer, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann
Exciton-polaritons in ZnO microcavity resonators

Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 175-176 (2009)
[ | ]

431
H. Hilmer, J. Sellmann, Ch. Sturm, R. Schmidt-Grund, B. Rheinländer, H. Hochmuth, J. Lenzner, M. Lorenz, M. Grundmann
PLD Growth of High Reflective All-Oxide Bragg Reflectors for ZnO Resonators

Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 151-152 (2009)
[ | ]

430
H. von Wenckstern, A. Lajn, A. Laufer, B.K. Meyer, H. Hochmuth M. Lorenz, M. Grundmann
Ag related defect state in ZnO thin films

Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 122-123 (2009)
[ | ]

429
M.W. Allen, S.M. Durbin, X. Weng, J.M. Redwing, K. Sarpatwari, S.E. Mohney, H. von Wenckstern, M. Grundmann
Temperature Dependent Properties of Nearly Ideal ZnO Schottky Diodes

IEEE Transact. Electr. Dev. 56(9), 2160-2164 (2009)
[ | | IF: 2.062 ]

428
M. Grundmann, C.P. Dietrich
Lineshape Theory of Photoluminescence from Semiconductor Alloys

J. Appl. Phys. 106(12), 123521:1-10 (2009)
[ | | IF: 2.21 ]

427
Q.Y. Xu, S. Zhou, D. Markó, K. Potzger, J. Fassbender, M. Vinnichenko, M. Helm, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
Paramagnetism in Co-doped ZnO films

J. Phys. D: Appl. Phys. 42(8), 085001:1-5 (2009)
[ | | IF: 2.772 ]

426
M. Brandt, H. Frenzel, H. Hochmuth, M. Lorenz, M. Grundmann, J. Schubert
Ferroelectric thin film field-effect transistors based on ZnO/BaTiO₃ heterostructures

J. Vac. Sci. Technol. B 27(3), 1789-1793 (2009)
[ | | IF: 1.267 ]

425
C. Czekalla, C. Sturm, R. Schmidt-Grund, B. Cao, J. Zúñiga Pérez, M. Lorenz, M. Grundmann
Optical characterization of zinc oxide microlasers and microwire core-shell heterostructures

J. Vac. Sci. Technol. B 27(3), 1780-1783 (2009)
[ | | IF: 1.267 ]

424
A. Lajn, H. von Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Wickert, C. Vogt, R. Denecke
Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type ZnO

J. Vac. Sci. Technol. B 27(3), 1769-1773 (2009)
[ | | IF: 1.267 ]

423
M. Lange, J. Zippel, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann
Temperature Dependence of Localization Effects of Excitons in ZnO/Cd_xZn_1-xO/ZnO Double Heterostructures

J. Vac. Sci. Technol. B 27(3), 1741-1745 (2009)
[ | | IF: 1.267 ]

422
J. Zippel, J. Lenzner, G. Benndorf, M. Lange, H. Hochmuth, M. Lorenz, M. Grundmann
Electronic coupling in Mg_xZn_1-xO/ZnO double quantum wells

J. Vac. Sci. Technol. B 27(3), 1735-1740 (2009)
[ | | IF: 1.267 ]

421
C. Sturm, H. Hilmer, R. Schmidt-Grund, C. Czekalla, J. Sellmann, J. Lenzner, M. Lorenz, M. Grundmann
Strong exciton-photon coupling in ZnO based resonators

J. Vac. Sci. Technol. B 27(3), 1726-1730 (2009)
[ | | IF: 1.267 ]