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Hirsch index (based on Publons)
h=77 (10/2024, 864 publ., 28854 cit.)
Hirsch index (based on Google Scholar)
h=94 (10/2024, 47960 cit., last 5y: h=49, 5 most quoted: 4639, 1585, 1505, 1491, 1151)
  Publons/ResearcherID
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954
Physics and Fundamental Theory
 
Comprehensive Semiconductor Science and Technology, Vol. 1, M. Grundmann (R. Fornari, Editor-in-Chief), eds. (Elsevier, 2024), ISBN 9780323960274
[ link ]

953
S. Vogt, D. Splith, S. Köpp, P. Schlupp, C. Petersen, H. von Wenckstern, M. Grundmann
Lateral α-Ga₂O₃:Zr metal-semiconductor field effect transistors

Appl. Phys. Lett. 125(25), 253507:1-6 (2024)
[ | | IF: 3.794 ]

952
S. Henn, A. Müller, M. Grundmann, C. Sturm
Long-range propagation of Bloch surface wave polaritons in ZnO

Appl. Phys. Lett. 125(21), 211104:1-5 (2024)
[ | | IF: 3.794 ]

951
S. Henn, M. Grundmann, C. Sturm
Characterization of dielectric diffraction gratings by spectroscopic ellipsometry

J. Appl. Phys. 136(7), 073101:1-7 (2024)
[ | | IF: 2.21 ]

950
M.S. Bar, D. Splith, Y. Chen, M. Grundmann, H. von Wenckstern, T. Rauch, S. Blaurock, H. Krautscheid
Deconvolution of light- and heavy-hole contributions to temperature-dependent Hall effect measurements in zincblende copper iodide

Phys. Rev. Appl. 22(4), 044027:1-8 (2024)
[ | | IF: 4.808 ]

949
S. Vogt, C. Petersen, H. von Wenckstern, M. Grundmann, T. Schultz, N. Koch
Zr doping in pulsed laser deposited α-Ga₂O₃ for device applications

Phys. Rev. Appl. 21(6), 064016:1-8 (2024)
[ | | IF: 4.808 ]

948
C. Dethloff, K. Thieme, S. Selle, M. Seifert, S. Vogt, D. Splith, S. Botti, M. Grundmann, M. Lorenz
Ni-Alloyed Copper Iodide Thin Films: Microstructural Features and Functional Performance

Phys. Status Solidi B 261(3), 2300492:1-11 (2024)
[ | | IF: 1.522 ]

947
S. Henn, G. Dornberg, A. Müller, C. Bundesmann, F. Frost, C. Sturm, M. Grundmann
Optical and structural characterization of ZnO thin films upon ion beam assisted smoothing

Thin Solid Films 794, 140290:1-8 (2024)
[ | | IF: 1.604 ]

946
A. Jörns, H. von Wenckstern, a.M. Grundmann
Demonstration of Two Multi-component Target Ablation Approaches and Their Application in Combinatorial Pulsed Laser Deposition
Adv. Phys. Res. 3(5), 2300140:1-8 (2024)
[ | ]

945
M. Grundmann
Quantum devices of reduced dimensionality
 
Encyclopedia of Condensed Matter Physics (2nd edition) 3, 529-533 (2024), T. Chakraborty, ed. (Elsevier, Oxford, 2024), ISBN 978-0-323-91408-6
[ | ]

944
T. Schultz, M. Kneiß, P. Storm, D. Splith, H. von Wenckstern, C.T. Koch, A. Hammud, M. Grundmann, N. Koch
Growth of κ-([Al,In]_xGa_1-x)₂O₃ Quantum Wells and their Potential for Quantum Well Infrared Photodetectors

ACS Appl. Mater. Interfaces 15(24), 29535-29541 (2023)
[ | | IF: 7.504 ]

943
F. Schöppach, D. Splith, H. von Wenckstern, M. Grundmann
Oxygen Plasma Treatment to Enable Indium Oxide MESFET Devices

Adv. Electron. Mater. 9(11), 2300291:1-7 (2023)
[ | | IF: 6.312 ]

942
F. Geng, L. Wang, T. Stralka, D. Splith, S. Ruan, J. Yang, L. Yang, G. Gao, L. Xu, M. Lorenz, M. Grundmann, J. Zhu, C. Yang
(111)-oriented growth and acceptor doping of transparent conductive CuI:S thin films by spin coating and RF-sputtering

Adv. Engin. Mater. 25(11), 2201666:1-5 (2023)
[ | | IF: 3.862 ]

941
E. Krüger, M. Seifert, V. Gottschalch, H. Krautscheid, C.S. Schnohr, S. Botti, M. Grundmann, C. Sturm
Optical properties of Ag_xCu_1–xI alloy thin films

AIP Adv. 13(3), 035117:1-11 (2023)
[ | | IF: 1.444 ]

940
J. Borgersen, R. Karsthof, V. Rønning, L. Vines, H. von Wenckstern, M. Grundmann, A.Yu. Kuznetsov, K.M. Johansen
Origin of enhanced conductivity in low dose ion irradiated oxides

AIP Adv. 13(1), 015211:1-5 (2023)
[ | | IF: 1.444 ]

939
A. Müller, S. Henn, E. Krüger, S. Blaurock, H. Krautscheid, M. Grundmann, C. Sturm
Two- and three-photon absorption in bulk CuI

Appl. Phys. Lett. 123(12), 122103:1-5 (2023)
[ | | IF: 3.794 ]

938
S. Luo, L. Trefflich, S. Selle, R. Hildebrandt, E. Krüger, S. Lange, J. Yu, C. Sturm, M. Lorenz, H. von Wenckstern, C. Hagendorf, T. Höche, M. Grundmann
Ultrawide Bandgap Willemite-Type Zn₂GeO₄ Epitaxial Thin Films

Appl. Phys. Lett. 122(3), 031601:1-7 (2023)
[ | | IF: 3.794 ]

937
C. Petersen, S. Vogt, M. Kneiß, H. von Wenckstern, M. Grundmann
PLD of α-Ga₂O₃ on m-plane Al₂O₃: Growth regime, growth process, and structural properties

APL Mater. 11(6), 061122:1-8 (2023)
[ | | IF: 4.323 ]

936
R. Hildebrandt, M. Seifert, J. George, S. Blaurock, S. Botti, H. Krautscheid, M. Grundmann, C. Sturm
Temperature dependent second-order Raman scattering in CuI

arxiv: 2305.18931 (2023)
[ | ]

935
J.K. Jochum, M. Lorenz, H.P. Gunnlaugsson, C. Patzig, T. Höche, M. Grundmann, A. Vantomme, K. Temst, M.J. Van Bael, V. Lazenka
Impact of magnetization and hyperfine field distribution on high magnetoelectric coupling strength in BaTiO₃-BiFeO₃ multilayers

arxiv: 2303.08493 (2023)
[ | ]

934
A. Langørgen, Y.K. Frodason, R. Karsthof, H. von Wenckstern, I.J.T. Jensen, L. Vines, M. Grundmann
Defect level in κ-Ga₂O₃ revealed by thermal admittance spectroscopy

J. Appl. Phys. 134(1), 015701:1-6 (2023)
[ | | IF: 2.21 ]

933
S. Köpp, C. Petersen, D. Splith, M. Grundmann, H. von Wenckstern
Properties of Schottky barrier diodes on heteroeptixial α-Ga₂O₃ thin films

J. Vac. Sci. Technol. A 41(4), 043411:1-9 (2023) [Editor's Pick]
[ | | IF: 1.432 ]

932
L. Thyen, D. Splith, M. Kneiß, M. Grundmann, H. von Wenckstern
Masked-assisted radial-segmented target pulsed-laser deposition: A Novel Method for Area-Selective Deposition using Pulsed-Laser Deposition

J. Vac. Sci. Technol. A 41(2), 020801:1-5 (2023) [Editor's Pick]
[ | | IF: 1.432 ]

931
R. Hildebrandt, M. Seifert, J. George, S. Blaurock, S. Botti, H. Krautscheid, M. Grundmann, C. Sturm
Determination of acoustic phonon anharmonicities via second-order Raman scattering in CuI

New J. Phys. 25(12), 123022:1-11 (2023)
[ | | IF: 4.063 ]

930
S. Montag, D. Splith, M. Kneiß, M. Grundmann, J.G. Fernandez, Ø. Prytz, H. von Wenckstern
Cation segregation observed in an (In,Ga)₂O₃ material thin film library beyond the miscibility limit of the bixbyite structure

Phys. Rev. Mater. 7(9), 094603:1-9 (2023)
[ | ]

929
T. Stralka, M. Bar, F. Schöppach, S. Selle, C. Yang, H. von Wenckstern, M. Grundmann
Grain and grain boundary conduction channels in copper iodide thin films

Phys. Status Solidi A 220(6), 2200883:1-8 (2023)
[ | | IF: 1.648 ]

928
S. Vogt, C. Petersen, M. Kneiß, D. Splith, T. Schultz, H. von Wenckstern, N. Koch, M. Grundmann
Realization of conductive n-type doped α-Ga₂O₃ on m-plane sapphire grown by a two-step pulsed laser deposition process

Phys. Status Solidi A 220(3), 2200721:1-6 (2023)
[ | | IF: 1.648 ]

927
E.M. Zollner, S. Selle, C. Yang, K. Ritter, S. Eckner, E. Welter, M. Grundmann, C.S. Schnohr
Oxygen-induced phase separation in sputtered Cu-Sn-I-O thin films

Phys. Status Solidi A 220(5), 2200646:1-10 (2023)
[ | | IF: 1.648 ]

926
M. Grundmann
Space Charge Region Beyond the Abrupt Approximation

Phys. Status Solidi B 260(11), 2300257:1-4 (2023)
[ | | IF: 1.522 ]

925
E. Krüger, V. Gottschalch, G. Benndorf, R. Hildebrandt, A.L.P. Brenes, S. Blaurock, M. Bar, S. Merker, C. Sturm, M. Grundmann, H. Krautscheid
Epitaxial growth of Ag_xCu_1–xI on Al₂O₃(0001)
 
Phys. Status Solidi B 260(2), 2200493:1-8 (2023)
[ | | extra | IF: 1.522 ]

924
A. Sharma, O.T. Ciubotariu, P. Matthes, S. Okano, V. Zviagin, J. Kalbáčová, S. Gemming, C. Himcinschi, M. Grundmann, D.R.T. Zahn, M. Albrecht, G. Salvan
Optical and magneto-optical properties of pulsed laser-deposited thulium iron garnet thin films
Appl. Res. 3(2), e202200064:1-11 (2023)
[ | ]

923
M. Grundmann
Thin Film Electronics from Amorphous Oxide and Halogen Semiconductors
 
BuildMoNa Annual Report 2021, p. 27-29 (2023)
[ | link ]

922
M. Lorenz, P. Storm, S. Gierth, S. Selle, H. von Wenckstern, M. Grundmann
Diffundierter Sauerstoff als dominierender flacher Akzeptor in p-Typ Kupferiodid-Dünnfilmen
Chemie Ingenieur Technik 95(11), 1786-1793 (2023)
[ | ]

921
B. Burchard, J. Meijer, M. Grundmann
Trägermaterial zur Montage von Diamant-Nanokristallen mit NV-Farbzentren in CMOS- Schaltkreisen mittels Gelatine
 
DE102019121029B4 (Deutsches Patent- und Markenamt, München, 2023)
[ ]

920
F. Geng, Y.-N. Wu, D. Splith, L. Wang, X. Kang, S. Liang, L. Yang, M. Lorenz, M. Grundmann, J. Zhu, C. Yang
Amorphous Transparent Cu(S,I) Thin Films with Very High Hole Conductivity
J. Phys. Chem. Lett. 14(26), 6163-6169 (2023)
[ link | ]

919
M. Lorenz, H. Hochmuth, H. von Wenckstern, M. Grundmann
Flexible hardware concept of pulsed laser deposition for large areas and combinatorial composition spreads
Rev. Sci. Instrum. 94(8), 083905:1-12 (2023)
[ | ]

918
M. Grundmann
DEVICE FOR CONDUCTING RADIATION, A PHOTODETECTOR ARRANGEMENT, AND A METHOD FOR SPATIALLY RESOLVED SPECTRAL ANALYSIS
US 11,543,346 B2 (United States Patent, 2023)
[ ]

917
P. Storm, K. Karimova, M.S. Bar, S. Selle, H. von Wenckstern, M. Grundmann, M. Lorenz
Suppression of Rotational Domains of CuI employing Sodium Halide Buffer Layers

ACS Appl. Mater. Interfaces 14(10), 12350-12358 (2022)
[ | | IF: 7.504 ]

916
R. Karsthof, Y.K. Frodason, A. Galeckas, P.M. Weiser, V. Zviagin, M. Grundmann
Light absorption and emission by defects in doped nickel oxide

Adv. Phot. Res. 3(11), 202200138:1-10 (2022)
[ | | IF: 1.9 ]

915
T. Jawinski, C. Sturm, R. Clausing, H. Kempa, M. Grundmann, R. Scheer, H. von Wenckstern
Highly crystalline In₂S₃ thin films epitaxially grown on sapphire substrates

AIP Adv. 12(12), 125215:1-9 (2022) [Featured Article]
[ | | IF: 1.444 ]

914
M. Wang, Y. Yu, S. Prucnal, Y. Berencén, M.S. Shaikh, L. Rebohle, M.B. Khan, V. Zviagin, R. Hübner, A. Pashkin, A. Erbe, Y.M. Georgiev, M. Grundmann, M. Helm, R. Kirchner, S. Zhou
Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon

arxiv: 2210.03373 (2022)
[ | ]

913
M. Seifert, E. Krüger, M.S. Bar, S. Merker, H. von Wenckstern, H. Krautscheid, M. Grundmann, C. Sturm, S. Botti
Dielectric function of CuBr_xI_1−x alloy thin films

arxiv: 2207.01344 (2022)
[ | ]

912
R. Karsthof, Y.K. Frodason, A. Galeckas, P.M. Weiser, V. Zviagin, M. Grundmann
Light absorption and emission by defects in doped nickel oxide

arxiv: 2205.02606 (2022)
[ | ]

911
X. Xia, N.S. Al-Mamun, C. Fares, A. Haque, F. Ren, A. Hassa, H. von Wenckstern, M. Grundmann, S.J. Pearton
Band Alignment of Al₂O₃ on α-(Al_xGa_1-x)₂O₃

ECS J. Solid State Sci. Techn. 11(2), 025006:1-8 (2022)
[ | | IF: 1.808 ]

910
P. Storm, S. Selle, H. von Wenckstern, M. Grundmann, M. Lorenz
Epitaxial lift-off of single crystalline CuI thin films

J. Phys. Chem. C 10(11), 4124-4127 (2022)
[ | | IF: 4.814 ]

909
T. Ruf, S. Merker, F. Syrowatka, P. Trempler, G. Schmidt, M. Lorenz, M. Grundmann, R. Denecke
Preferential growth of perovskite BaTiO₃ thin films on Gd₃Ga₅O₁₂(100) and Y₃Fe₅O₁₂(100) oriented substrates by pulsed laser deposition

Mater. Adv. 3(12), 4920-4931 (2022)
[ | ]

908
M. Wang, Y. Yu, S. Prucnal, Y. Berencén, M.S. Shaikh, L. Rebohle, M.B. Khan, V. Zviagin, R. Hübner, A. Pashkin, A. Erbe, Y.M. Georgiev, M. Grundmann, M. Helm, R. Kirchner, S. Zhou
Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon

Nanoscale 14(7), 2826-2836 (2022)
[ | | IF: 7.394 ]

907
A. Welk, A. Reinhardt, D. Splith, H. von Wenckstern, M. Grundmann, O. Herrfurth
Analysis of an extended percolation-based random band-edge model applied to the amorphous oxide semiconductors: multi-anionic zinc oxynitride, multi-cationic zinc tin oxide and multinary zinc magnesium oxynitride

Phys. Rev. Appl. 17(2), 024007:1-14 (2022)
[ | | IF: 4.808 ]

906
M. Seifert, E. Krüger, M.S. Bar, S. Merker, H. von Wenckstern, H. Krautscheid, M. Grundmann, C. Sturm, S. Botti
Dielectric function of CuBr_xI_1–x alloy thin films

Phys. Rev. Mater. 6(12), 124601:1-11 (2022)
[ | ]

905
K. Dorywalski, O. Lupicka, M. Grundmann, C. Sturm
Combination of a global-search method with model selection criteria for the ellipsometric data evaluation of DLC coatings
Adv. Opt. Technol. 11(5-6), 173-178 (2022)
[ | ]

904
M. Grundmann
Amorphous oxide semiconductors for integrated devices
 
BuildMoNa Annual Report 2020, p. 27-31 (2022)
[ | link ]

903
M. Grundmann
The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 4th edition
 
(Springer Nature, Cham, 2021), ISBN 978-3-030-51568-3
[ link | ]

902
J.E.N. Swallow, R.G. Palgrave, P.A.E. Murgatroyd, A. Regoutz, M. Lorenz, A. Hassa, M. Grundmann, H. von Wenckstern, J.B. Varley, T.D. Veal
Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

ACS Appl. Mater. Interfaces 13(2), 2807-2819 (2021)
[ | | IF: 7.504 ]

901
A. Reinhardt, H. von Wenckstern, M. Grundmann
All-amorphous Junction Field-Effect Transistors Based on High-Mobility Zinc Oxynitride

Adv. Electron. Mater. 7(4), 2000883:1-6 (2021)
[ | | IF: 6.312 ]

900
R. Hildebrandt, C. Sturm, M. Grundmann, M. Wieneke, A. Dadgar
Raman tensor determination of transparent uniaxial crystals and their thin films - a-plane GaN as exemplary case

Appl. Phys. Lett. 119(12), 121109:1-5 (2021)
[ | | IF: 3.794 ]

899
E. Krüger, M.S. Bar, S. Blaurock, L. Trefflich, R. Hildebrandt, A. Müller, O. Herrfurth, G. Benndorf, H. von Wenckstern, H. Krautscheid, M. Grundmann, C. Sturm
Dynamics of exciton-polariton emission in CuI

APL Mater. 9(12), 121102:1-12 (2021)
[ | | IF: 4.323 ]

898
P. Storm, S. Gierth, S. Selle, M.S. Bar, H. von Wenckstern, M. Grundmann, M. Lorenz
Evidence for oxygen being a dominant shallow acceptor in p-type CuI

APL Mater. 9(5), 051101:1-9 (2021)
[ | | IF: 4.323 ]

897
A. Welk, A. Reinhardt, O. Herrfurth, T. Schultz, H. von Wenckstern, N. Koch, M. Grundmann
Tuning material properties of amorphous zinc oxynitride thin films by magnesium cationic substitution

APL Mater. 9(2), 021120:1-8 (2021)
[ | | IF: 4.323 ]

896
X. Xia, C. Fares, F. Ren, A. Hassa, H. von Wenckstern, M. Grundmann, S.J. Pearton
Al Composition Dependence of Band Offsets for SiO₂ on α-(Al_xGa_1-x)₂O₃

ECS J. Solid State Sci. Techn. 10(11), 113007:1-8 (2021)
[ | | IF: 1.808 ]

895
O. Lahr, M. Steudel, H. von Wenckstern, M. Grundmann
Mechanical Stress Stability of Amorphous Zinc Tin Oxide Thin-Film Transistors

Front. Electron. 2, 797308:1-7 (2021)
[ | ]

894
J. Borgersen, K.M. Johansen, L. Vines, H. von Wenckstern, M. Grundmann, A.Yu. Kuznetsov
Fermi level controlled point defect balance in ion irradiated indium oxide

J. Appl. Phys. 130(8), 085703:1-6 (2021)
[ | | IF: 2.21 ]

893
M. Kneiß, D. Splith, P. Schlupp, A. Hassa, H. von Wenckstern, M. Lorenz, M. Grundmann
Realization of Highly Rectifying Schottky Barrier Diodes and pn Heterojunctions on κ-Ga₂O₃ by Overcoming the Conductivity Anisotropy

J. Appl. Phys. 130(8), 084502:1-14 (2021)
[ | | IF: 2.21 ]

892
P. John, M.A. Khalfioui, C. Deparis, A. Welk, C. Lichtensteiger, R. Bachelet, G. Saint-Girons, M. Hugues, M. Grundmann, J. Zúñiga-Pérez
Epitaxial Zn₃N₂ thin films by molecular beam epitaxy: Structural, electrical and optical properties

J. Appl. Phys. 130(6), 065104:1-11 (2021)
[ | | IF: 2.21 ]

891
V. Gottschalch, G. Benndorf, S. Selle, E. Krüger, S. Blaurock, M. Kneiß, M. Bar, C. Sturm, S. Merker, T. Höche, M. Grundmann, H. Krautscheid
Epitaxial growth of rhombohedral β- and cubic γ-CuI

J. Cryst. Growth 570, 126218 (2021)
[ | | IF: 1.552 ]

890
M. Kneiß, D. Splith, H. von Wenckstern, M. Lorenz, T. Schultz, N. Koch, M. Grundmann
Strain States and Relaxation for α-(Al_xGa_1−x)₂O₃ Thin Films on Prismatic Planes of α-Al₂O₃ in the Full Composition Range: Fundamental Difference of a- and m-Epitaxial Planes in the Manifestation of Shear Strain and Lattice Tilt

J. Mat. Res. 36(23), 4816-4831 (2021)
[ | | IF: 1.713 ]

889
O. Herrfurth, E. Krüger, S. Blaurock, H. Krautscheid, M. Grundmann
Hot-phonon effects in photo-excited wide-bandgap semiconductors

J. Phys.: Condens. Matter 33(20), 205701:1-9 (2021)
[ | | IF: 2.721 ]

888
A. Hassa, M. Grundmann, H. von Wenckstern
Progression of Group-III Sesquioxides: Epitaxy, Solubility and Desorption

J. Phys. D: Appl. Phys. 54(22), 223001:1-15 (2021)
[ | | IF: 2.772 ]

887
M. Grundmann, T. Stralka, M. Lorenz, S. Selle, C. Patzig, T. Höche
Plastic strain relaxation and alloy instability in epitaxial corundum-phase (Al,Ga)₂O₃ thin films on r-plane Al₂O₃

Mater. Adv. 2(13), 4316-4322 (2021)
[ | ]

886
S. Henn, M. Grundmann, C. Sturm
Strong coupling of Bloch surface waves and excitons in ZnO up to 430 K

New J. Phys. 23(9), 093031:1-10 (2021)
[ | | IF: 4.063 ]

885
M. Grundmann, C. Sturm
Angular position of singular optic axes for arbitrary dielectric tensors

Phys. Rev. A 103(5), 053510:1-6 (2021)
[ | | IF: 3.042 ]

884
O. Herrfurth, S. Richter, M. Rebarz, S. Espinoza, J. Zúñiga-Pérez, C. Deparis, J. Leveillee, A. Schleife, M. Grundmann, J. Andreasson, R. Schmidt-Grund
Transient birefringence and dichroism in ZnO studied with fs-time-resolved spectroscopic ellipsometry

Phys. Rev. Res. 3(1), 013246:1-12 (2021)
[ | ]

883
D. Splith, S. Müller, H. von Wenckstern, M. Grundmann
Numerical modeling of Schottky barrier diode characteristics

Phys. Status Solidi A 218(12), 202100121:1-13 (2021)
[ | | IF: 1.648 ]

882
M. Grundmann, M. Lorenz
Azimuthal anisotropy of rhombohedral (corundum-phase) heterostructures

Phys. Status Solidi B 258(7), 202100104:1-5 (2021)
[ | | IF: 1.522 ]

881
M. Kneiß, P. Storm, A. Hassa, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann
Epitaxial Growth of κ-(Al_xGa_1−x)₂O₃ Layers and Superlattice Heterostructures up to x=0.48 on Highly Conductive Al-doped ZnO Thin Film Templates by Pulsed Laser Deposition

Phys. Status Solidi B 258(2), 202000359:1-10 (2021)
[ | | IF: 1.522 ]

880
A. Hassa, P. Storm, M. Kneiß, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann
Correction to: Structural and elastic properties of α-(Al_xGa_1−x)₂O₃ thin films on (11.0) Al₂O₃ substrates for the entire composition range

Phys. Status Solidi B 258(2), 2000632 (1 page) (2021)
[ | | IF: 1.522 ]

879
A. Hassa, P. Storm, M. Kneiß, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann
Structural and elastic properties of α-(Al_xGa_1−x)₂O₃ thin films on (11.0) Al₂O₃ substrates for the entire composition range

Phys. Status Solidi B 258(2), 2000394:1-10 (2021)
[ | | IF: 1.522 ]

878
P. Storm, M.S. Bar, S. Selle, H. von Wenckstern, M. Grundmann, M. Lorenz
P-Type Doping and Alloying of CuI Thin Films with Selenium

Phys. Status Solidi RRL 15(8), 202100214:1-6 (2021)
[ | | IF: 2.58 ]

877
W. Yu, G. Benndorf, Y. Jiang, K. Jiang, C. Yang, M. Lorenz, M. Grundmann
Control of optical absorption and emission of sputtered copper iodide thin films

Phys. Status Solidi RRL 15(1), 2000431:1-5 (2021)
[ | | IF: 2.58 ]

876
M. Grundmann
Combinatorial acceleration of material research
 
BuildMoNa Annual Report 2019, p. 26-28 (2021)
[ | link ]

875
T. Schultz, M. Kneiß, P. Storm, D. Splith, H. von Wenckstern, M. Grundmann, N. Koch
Band offsets at κ-([Al,In]_xGa_1-x)₂O₃/MgO interfaces

ACS Appl. Mater. Interfaces 12(7), 8879-8885 (2020)
[ | | IF: 7.504 ]

874
O. Lahr, M. Bar, H. von Wenckstern, M. Grundmann
All-oxide transparent thin-film transistors based on amorphous zinc-tin-oxide fabricated at room temperature: Approaching the thermodynamic limit for sub-threshold swing

Adv. Electron. Mater. 6(10), 2000423:1-6 (2020)
[ | | IF: 6.312 ]

873
A. Reinhardt, H. von Wenckstern, M. Grundmann
Metal-Semiconductor Field-Effect Transistors Based on the Amorphous Multi-Anion Compound ZnON

Adv. Electron. Mater. 6(4), 1901066:1-5 (2020)
[ | | IF: 6.312 ]

872
M. Grundmann
Comment on "Stress–strain state in α-Ga₂O₃ epitaxial films on α-Al₂O₃ substrates" [Appl. Phys. Express 13, 075502 (2020)]

Appl. Phys. Expr. 13(8), 089101 (1 page) (2020)
[ | | IF: 2.567 ]

871
M. Budde, D. Splith, P. Mazzolini, A. Tahraoui, J. Feldl, M. Ramsteiner, H. von Wenckstern, M. Grundmann, O. Bierwagen
SnO/β-Ga₂O₃ vertical pn heterojunction diodes

Appl. Phys. Lett. 117(25), 252106:1-6 (2020)
[ | | IF: 3.794 ]

870
M. Grundmann, M. Lorenz
Epitaxial growth and strain relaxation of corundum-phase (Al,Ga)₂O₃ thin films from pulsed laser deposition at 1000°C on r-plane Al₂O₃

Appl. Phys. Lett. 117(24), 242102:1-4 (2020)
[ | | IF: 3.794 ]

869
M. Grundmann
Universal Relation for the Orientation of Dislocations from Prismatic Glide Systems in Hexagonal and Rhombohedral Strained Heterostructures

Appl. Phys. Lett. 116(8), 082104:1-3 (2020)
[ | | IF: 3.794 ]

868
R. Karsthof, H. von Wenckstern, M. Grundmann
Identification of Li_Ni and V_Ni acceptor levels in doped nickel oxide
 
APL Mater. 8(12), 121106:1-7 (2020) [Featured article]
[ | | extra | IF: 4.323 ]

867
P. Storm, M. Bar, S. Selle, C. Yang, H. von Wenckstern, M. Grundmann, M. Lorenz
High mobility, highly transparent, smooth, p-type CuI thin films grown by pulsed laser deposition

APL Mater. 8(9), 091115:1-8 (2020) [SciLight]
[ | | IF: 4.323 ]

866
O. Lahr, H. von Wenckstern, M. Grundmann
Ultrahigh-Performance Integrated Inverters Based on Amorphous Zinc-Tin-Oxide Deposited at Room Temperature

APL Mater. 8(9), 091111:1-8 (2020) [Editor's Pick]
[ | | IF: 4.323 ]

865
P. Schlupp, S. Vogt, H. von Wenckstern, M. Grundmann
Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates

APL Mater. 8(6), 061112:1-7 (2020)
[ | | IF: 4.323 ]

864
M. Kneiß, P. Storm, A. Hassa, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann
Growth, Structural and Optical Properties of Coherent κ-(Al_xGa_1-x)₂O₃/κ-Ga₂O₃ Quantum Well Superlattice Heterostructures

APL Mater. 8(5), 051112:1-14 (2020)
[ | | IF: 4.323 ]

863
M. Grundmann, M. Lorenz
Anisotropic Strain Relaxation Through Prismatic and Basal Slip in α-(Al,Ga)₂O₃ on R-Plane Al₂O₃

APL Mater. 8(2), 021108:1-14 (2020)
[ | | IF: 4.323 ]

862
A. Hassa, C. Sturm, M. Kneiß, D. Splith, H. von Wenckstern, T. Schultz, N. Koch, M. Lorenz, M. Grundmann
Solubility Limit and Material Properties of a κ-(Al_xGa_1−x)₂O₃ thin film with a lateral cation gradient on (00.1)Al₂O₃ by tin-assisted PLD

APL Mater. 8(2), 021103:1-7 (2020)
[ | | IF: 4.323 ]

861
R. Karsthof, H. von Wenckstern, M. Grundmann
Identification of Li_Ni and V_Ni acceptor levels in doped nickel oxide

arxiv: 2010.02694 (2020)
[ | link ]

860
M. Budde, D. Splith, P. Mazzolini, A. Tahraoui, J. Feldl, M. Ramsteiner, H. von Wenckstern, M. Grundmann, O. Bierwagen
SnO/β-Ga₂O₃ vertical pn heterojunction diodes

arxiv: 2010.00362 (2020)
[ | link ]

859
C. Wouters, C. Sutton, L.M. Ghiringhelli, T. Markurt, R. Schewski, A. Hassa, H. von Wenckstern, M. Grundmann, M. Scheffler, M. Albrecht
Investigating the ranges of (meta)stable phase formation in (In_xGa_1-x)₂O₃: Impact of the cation coordination

arxiv: 2008.04573 (2020)
[ | link ]

858
R. Staacke, R. John, M. Kneiß, C. Osterkamp, S. Diziain, F. Jelezko, M. Grundmann, J. Meijer
Method of full polarization control of microwave fields in a scalable transparent structure for spin manipulation

J. Appl. Phys. 128(19), 194301:1-9 (2020)
[ | | IF: 2.21 ]

857
V. Zviagin, C. Sturm, P. Esquinazi, M. Grundmann, R. Schmidt-Grund
Control of Magnetic Properties in Spinel ZnFe₂O₄ Thin Films Through Intrinsic Defect Manipulation

J. Appl. Phys. 128(16), 165702:1-7 (2020)
[ | | IF: 2.21 ]

856
C. Fares, M. Xian, D.J. Smith, M.R. McCartney, M. Kneiß, H. von Wenckstern, M. Grundmann, M. Tadjer, F. Ren, S.J. Pearton
Changes in band alignment during annealing at 600°C of ALD Al₂O₃ on (In_xGa_1-x)₂O₃ for x=0.25-0.74

J. Appl. Phys. 127(10), 105701:1-8 (2020)
[ | | IF: 2.21 ]

855
H. Wei, C. Yang, Y. Wu, B. Cao, M. Lorenz, M. Grundmann
From energy harvesting to topologically insulating behavior: ABO₃–type epitaxial thin films and superlattices

J. Mater. Chem. C 8(44), 15575-15596 (2020)
[ | | IF: 7.059 ]

854
M. Fukumoto, C. Yang, W. Yu, C. Patzig, T. Höche, T. Ruf, R. Denecke, M. Lorenz, M. Grundmann
Experimental evidence of wide bandgap in triclinic (001)-oriented Sn₅O₂(PO₄)₂ thin films on Y₂O₃ buffered glass substrates

J. Mater. Chem. C 8(40), 14203-14207 (2020)
[ | | IF: 7.059 ]

853
J. Borgersen, L. Vines, Y.K. Frodason, A. Kuznetsov, H. von Wenckstern, M. Grundmann, M.W. Allen, J. Zúñiga-Pérez, K. Johansen
Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials

J. Phys.: Condens. Matter 32(50), 415704:1-12 (2020)
[ | | IF: 2.721 ]

852
A. Hassa, C. Wouters, M. Kneiß, D. Splith, C. Sturm, H. von Wenckstern, M. Albrecht, M. Lorenz, M. Grundmann
Control of Phase Formation of (Al_xGa_1-x)₂O₃ Thin Films on c-plane Al₂O₃

J. Phys. D: Appl. Phys. 53(48), 485105:1-9 (2020)
[ | | IF: 2.772 ]

851
S. Hohenberger, J.K. Jochum, M.J. Van Bael, K. Temst, C. Patzig, T. Höche, M. Lorenz, M. Grundmann
Enhanced Magnetoelectric Coupling in BaTiO₃-BiFeO₃ Multilayers - An Interface Effect

Materials 13(1), 197:1-14 (2020)
[ | | IF: 2.247 ]

850
L. Krieg, Z. Zhang, D. Splith, H. von Wenckstern, M. Grundmann, X. Wang, K.K. Gleason, T. Voss
Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition

Nano Express 1(1), 010013:1-7 (2020)
[ | ]

849
L. Krieg, F. Meierhofer, S. Gorny, S. Leis, D. Splith, Z. Zhang, H. von Wenckstern, M. Grundmann, X. Wang, J. Hartmann, C. Margenfeld, I.M. Clavero, A. Avramescu, T. Schimpke, D. Scholz, H.-J. Lugauer, M. Strassburg, J. Jungclaus, S. Bornemann, H. Spende, A. Waag, K.K. Gleason, T. Voss
Towards 3D hybrid inorganic/organic optoelectronics: light emission and electronic transport properties of GaN/oCVD-PEDOT structures

Nature Commun. 11, 5092:1-10 (2020)
[ | | IF: 12.001 ]

848
M. Grundmann
Topological States of the Diatomic Linear Chain: Effect of Impedance Matching to the Fixed Ends

New J. Phys. 22(8), 083076:1-7 (2020)
[ | | IF: 4.063 ]

847
S. Richter, O. Herrfurth, S. Espinoza, M. Rebarz, M. Kloz, J.A. Leveillee, A. Schleife, S. Zollner, M. Grundmann, J. Andreasson, R. Schmidt-Grund
Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry

New J. Phys. 22(8), 083066:1-14 (2020)
[ | | IF: 4.063 ]

846
C. Sturm, S. Höfer, K. Hingerl, T.G. Mayerhöfer, M. Grundmann
Dielectric function decomposition by dipole orientation distribution: Application to triclinic K₂Cr₂O₇

New J. Phys. 22(7), 073041:1-11 (2020)
[ | | IF: 4.063 ]

845
C. Sturm, V. Zviagin, M. Grundmann
Dielectric tensor, optical activity and singular optic axes of KTP in the spectral range 0.5-8.4 eV

Phys. Rev. Mater. 4(5), 055203:1-7 (2020)
[ | ]

844
R. Karsthof, A.M. Anton, F. Kremer, M. Grundmann
Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium

Phys. Rev. Mater. 4(3), 034601:1-7 (2020)
[ | ]

843
C. Wouters, C. Sutton, L.M. Ghiringhelli, T. Markurt, R. Schewski, A. Hassa, H. von Wenckstern, M. Grundmann, M. Scheffler, M. Albrecht
Investigating the ranges of (meta)stable phase formation in (In_xGa_1-x)₂O₃: Importance of the cation coordination

Phys. Rev. Res. 4(12), 125001:1-10 (2020)
[ | ]

842
L. Trefflich, F. Dissinger, R. Schmidt-Grund, C. Sturm, S.R. Waldvogel, M. Grundmann
Influence of the excitation conditions on the emission behavior of carbon nanodot-based planar microcavities

Phys. Rev. Res. 2(4), 043216:1-6 (2020)
[ | ]

841
M. Grundmann
Topological States due to Third-Neighbor Coupling in a Diatomic Linear Elastic Chains

Phys. Status Solidi B 257(9), 202000176:1-5 (2020)
[ | | IF: 1.522 ]

840
M. Grundmann
A Most General and Facile Recipe for the Calculation of Heteroepitaxial Strain

Phys. Status Solidi B 257(12), 2000323:1-5 (2020)
[ | | IF: 1.522 ]

839
I. Mertig, M. Grundmann, W. Widdra
Functionality of Oxide Interfaces
 
Phys. Status Solidi B 257(7), 2000270 (1 page) (2020)
[ | | extra | IF: 1.522 ]

838
R. Karsthof, M. Grundmann, H. von Wenckstern, J. Zúñiga-Pérez, C. Deparis
Nickel oxide-based heterostructures with large band offsets

Phys. Status Solidi B 257(7), 1900639:1-11 (2020)
[ | | IF: 1.522 ]

837
V. Zviagin, M. Grundmann, R. Schmidt-Grund
Impact of Defects on Magnetic Properties of Spinel Zinc Ferrite Thin Films

Phys. Status Solidi B 257(7), 1900630:1-11 (2020)
[ | | IF: 1.522 ]

836
R. Denecke, M. Welke, P. Huth, J. Gräfe, K. Brachwitz, M. Lorenz, M. Grundmann, M. Ziese, P. Esquinazi, E. Goering, G. Schütz, A. Chassé, K.-M. Schindler
Magnetic Anisotropy in Thin Layers of (Mn,Zn)Fe₂O₄ on SrTiO₃(001)

Phys. Status Solidi B 257(7), 1900627:1-8 (2020)
[ | | IF: 1.522 ]

835
H. von Wenckstern, M. Kneiß, P. Storm, M. Grundmann
A review of the segmented-target approach to combinatorial material synthesis by pulsed-laser deposition
 
Phys. Status Solidi B 257(7), 1900626:1-13 (2020)
[ | | IF: 1.522 ]

834
M. Grundmann
The Principal Axes Systems for the Elastic Properties of Monoclinic Gallia (β-Ga₂O₃)

Sci. Rep. 10, 19486:1-8 (2020)
[ | | IF: 5.578 ]

833
M. Grundmann
Oxid-Halbleiter mit ultrabreiter Bandlücke: Darstellung mittels kombinatorischer gepulster Laserdeposition und Untersuchung physikalischer Eigenschaften

Vakuum in Forschung und Praxis 32(6), 32-37 (2020)
[ | ]

832
C. Yang, E. Rose, W. Yu, T. Stralka, F. Geng, M. Lorenz, M. Grundmann
Controllable growth of copper iodide by sputtering towards high-mobility thin films and self-assembled microcrystals
ACS Applied Electronic Materials 2(11), 3627-3632 (2020)
[ | ]

831
M. Grundmann
Building material gradients laterally and vertically - combinatorial acceleration of material research and new device perspectives
 
BuildMoNa Annual Report 2018, p. 20-22 (2020)
[ | link ]

830
D. Splith, P. Schlupp, H. von Wenckstern, M. Grundmann
All-oxide pn-heterojunction diodes with β-Ga₂O₃
 
Gallium Oxide: Crystal Growth, Materials Properties, and Devices, p. 689-702 (2020), M. Higashiwaki, S. Fujita, eds. (Springer, Cham, 2020), ISBN 978-3-030-37152-4
[ | | extra ]

829
H. von Wenckstern, D. Splith, M. Grundmann
Pulsed Laser Deposition of Ga₂O₃ and Related Alloys
 
Gallium Oxide: Crystal Growth, Materials Properties, and Devices, p. 273-291 (2020), M. Higashiwaki, S. Fujita, eds. (Springer, Cham, 2020), ISBN 978-3-030-37152-4
[ | | extra ]

828
K. Dorywalski, R. Schmidt-Grund, M. Grundmann
Hybrid GA-gradient method for thin films ellipsometric data evaluation
J. of Computational Science 47(11), 101201:1-7 (2020)
[ | ]

827
T. Jawinski, R. Scheer, H. von Wenckstern, M. Lorenz, M. Grundmann
Properties of epitaxially grown In₂S₃:V thin films for intermediate band solar cell application
Proc. 47th IEEE Photovoltaic Specialists Conference (PVSC), p. 2663-2666 (2020)
[ | ]

826
J. Michel, D. Splith, J. Rombach, A. Papadogianni, T. Berthold, S. Krischok, M. Grundmann, O. Bierwagen, H. von Wenckstern, M. Himmerlich
Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In₂O₃

ACS Appl. Mater. Interfaces 11(30), 27073-27087 (2019)
[ | | IF: 7.504 ]

825
O. Lahr, S. Vogt, H. von Wenckstern, M. Grundmann
Low-voltage operation of ring oscillators based on room-temperature-deposited amorphous zinc-tin-oxide channel MESFETs

Adv. Electron. Mater. 5(12), 1900548:1-5 (2019)
[ | | IF: 6.312 ]

824
O. Herrfurth, T. Pflug, M. Olbrich, M. Grundmann, A. Horn, R. Schmidt-Grund
Femtosecond-time-resolved imaging of the dielectric function of ZnO in the visible to near-IR spectral range

Appl. Phys. Lett. 115(21), 212103:1-5 (2019) [Editor's Pick]
[ | | IF: 3.794 ]

823
P. Storm, M. Kneiß, A. Hassa, T. Schultz, D. Splith, H. von Wenckstern, N. Koch, M. Lorenz, M. Grundmann
Epitaxial κ-(Al_xGa_1-x)₂O₃ Thin Films and Heterostructures grown by Tin-assisted VCCS-PLD

APL Mater. 7(11), 111110:1-8 (2019) [Editor's Pick]
[ | | IF: 4.323 ]

822
M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, M. Lorenz, M. Grundmann
Epitaxial Stabilization of Single Phase κ-(In_xGa_1-x)₂O₃ Thin Films up to x=0.28 on c-sapphire and κ-Ga₂O₃ (001) Templates by Tin-assisted VCCS-PLD

APL Mater. 7(10), 101102:1-10 (2019) [Editor's Pick]
[ | | IF: 4.323 ]

821
A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva, M. Grundmann
Erratum: “Structural, optical, and electrical properties of orthorhombic κ-(In_xGa_1-x)₂O₃ thin films” [APL Mater. 7, 022525 (2019)]

APL Mater. 7(7), 079901 (1 page) (2019)
[ | | IF: 4.323 ]

820
C. Fares, M. Kneiß, H. von Wenckstern, M. Grundmann, M. Tadjer, F. Ren, E. Lambers, S.J. Pearton
Valence Band Offsets for ALD SiO₂ and Al₂O₃ on (In_xGa_1-x)₂O₃ for x=0.25-0.74

APL Mater. 7(7), 071115:1-7 (2019)
[ | | IF: 4.323 ]

819
A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva, M. Grundmann
Structural, optical and electrical properties of orthorhombic κ-(In_xGa_1-x)₂O₃ thin films

APL Mater. 7(2), 022525:1-9 (2019)
[ | | IF: 4.323 ]

818
M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, T. Schultz, N. Koch, M. Grundmann
Tin-Assisted Heteroepitaxial PLD-growth of κ-Ga₂O₃ Thin Films with High Crystalline Quality

APL Mater. 7(2), 022516:1-11 (2019)
[ | | IF: 4.323 ]

817
R. Karsthof, M. Grundmann, H. von Wenckstern, J. Zúñiga-Pérez, C. Deparis
Nickel oxide-based heterostructures with large band offsets

arxiv: 1910.13169 (2019)
[ | ]

816
V. Zviagin, C. Sturm, P. Esquinazi, M. Grundmann, R. Schmidt-Grund
Control of Magnetic Order in Spinel ZnFe₂O₄ Thin Films Through Intrinsic Defect Manipulation

arxiv: 1909.13711 (2019)
[ | link ]

815
R. Karsthof, M. Grundmann, A.M. Anton, F. Kremer
Polaronic inter-acceptor hopping transport in intrinsically doped nickel oxide

arxiv: 1905.03537 (2019)
[ | link ]

814
S. Richter, O. Herrfurth, S. Espinoza, M. Rebarz, M. Kloz, J.A. Leveillee, A. Schleife, S. Zollner, M. Grundmann, J. Andreasson, R. Schmidt-Grund
Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry

arxiv: 1902.05832 (2019)
[ | link ]

813
S. Prucnal, Y. Berencén, M. Wang, J. Grenzer, M. Voelskow, R. Hübner, Y. Yamamoto, A. Scheit, F. Bärwolf, V. Zviagin, R. Schmidt-Grund, M. Grundmann, J. Żuk, M. Turek, A. Droździel, K. Pyszniak, R. Kudrawiec, M.P. Polak, L. Rebohle, W. Skorupa, M. Helm, S. Zhou
Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping

arxiv: 1901.01721 (2019)
[ | link ]

812
A. Hassa, H. von Wenckstern, L. Vines, M. Grundmann
Influence of oxygen pressure on growth of Si-doped (Al_xGa_1-x)₂O₃ thin films on c-sapphire substrates by pulsed laser deposition

ECS J. Solid State Sci. Techn. 8(7), Q3217-Q3220 (2019)
[ | | IF: 1.808 ]

811
S. Müller, L. Thyen, D. Splith, A. Reinhardt, H. von Wenckstern, M. Grundmann
High-quality Schottky Barrier Diodes on β-Gallium Oxide Thin Films on Glass Substrate

ECS J. Solid State Sci. Techn. 8(7), Q3126-Q3132 (2019)
[ | | IF: 1.808 ]

810
C. Fares, Z. Islam, A. Haque, M. Kneiß, H. von Wenckstern, M. Grundmann, M. Tadjer, F. Ren, S.J. Pearton
Effect of Annealing on the Band Alignment of ALD SiO₂ on (Al_xGa_1-x)₂O₃ for x=0.2-0.65

ECS J. Solid State Sci. Techn. 8(12), P751-P756 (2019)
[ | | IF: 1.808 ]

809
C. Fares, M. Kneiß, H. von Wenckstern, M. Tadjer, F. Ren, E. Lambers, M. Grundmann, S.J. Pearton
Band Alignment of Atomic Layer Deposited SiO₂ and Al₂O₃ on (Al_xGa_1-x)₂O₃ for x=0.2-0.65

ECS J. Solid State Sci. Techn. 8(6), P351-P356 (2019)
[ | | IF: 1.808 ]

808
M. Grundmann
Monolithic Waveguide-based Linear Photodetector Array for Use as Ultra-Compact Spectrometer

IEEE Transact. Electr. Dev. 66(1), 470-477 (2019)
[ | | IF: 2.062 ]

807
O. Lahr, Z. Zhang, F. Grotjahn, P. Schlupp, S. Vogt, H. von Wenckstern, A. Thiede, M. Grundmann
Full-swing, High-gain Inverters Based on ZnSnO JFETs and MESFETs

IEEE Transact. Electr. Dev. 66(8), 3376-3381 (2019)
[ | | IF: 2.062 ]

806
S. Prucnal, Y. Berencén, M. Wang, L. Rebohle, R. Kudrawiec, M. Polak, V. Zviagin, R. Schmidt-Grund, M. Grundmann, J. Grenzer, M. Turek, A. Drozdziel, K. Pyszniak, J. Zuk, M. Helm, W. Skorupa, S. Zhou
Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing

J. Appl. Phys. 125(20), 203105:1-7 (2019)
[ | | IF: 2.21 ]

805
V. Gottschalch, S. Merker, S. Blaurock, M. Kneiß, U. Teschner, M. Grundmann, H. Krautscheid
Heteroepitaxial growth of α-, β-, γ- and κ-Ga₂O₃ phases by metalorganic vapor phase epitaxy

J. Cryst. Growth 510(15 March 2019), 76-84 (2019)
[ | | IF: 1.552 ]

804
Z. Li, H. Li, Z. Wu, M. Wang, J. Luo, H. Torun, P. Hu, C. Yang, M. Grundmann, X. Liu, Y.Q. Fu
Advances in designs and mechanisms of semiconducting metal oxide nanostructures for high-precision gas sensors operated at room-temperature

Mater. Horiz. 6(3), 470-506 (2019)
[ | | IF: 13.183 ]

803
L. Brillson, J. Cox, H. Gao, G. Foster, W. Ruane, A. Jarjour, M. Allen, D. Look, H. von Wenckstern, M. Grundmann
Native Point Defect Measurement and Manipulation In ZnO Nanostructures

Materials 12(14), 2242:1-15 (2019)
[ | | IF: 2.247 ]

802
C. Sturm, V. Zviagin, M. Grundmann
Applicability of the constitutive equations for the determination of the material properties of optically active materials

Opt. Lett. 44(6), 1351-1354 (2019) [Editor's Pick]
[ | | IF: 3.589 ]

801
R. Karsthof, M. Grundmann, M. Anton, F. Kremer
Polaronic inter-acceptor hopping transport in intrinsically doped nickel oxide

Phys. Rev. B 99(23), 235201:1-13 (2019) [Editor's Suggestion]
[ | | IF: 3.767 ]

800
S. Richter, H.-G. Zirnstein, J. Zúñiga-Pérez, C. Deparis, L. Trefflich, C. Sturm, B. Rosenow, M. Grundmann, R. Schmidt-Grund
Voigt Exceptional Points in an Anisotropic ZnO-based Planar Microcavity: Square-Root Topology, Polarization Vortices, and Circularity

Phys. Rev. Lett. 123(22), 227401:1-7 (2019)
[ | | IF: 7.645 ]

799
M. Grundmann
Modeling of a waveguide-based UV-VIS-IR spectrometer based on a lateral (In,Ga)N alloy gradient
 
Phys. Status Solidi A 216(14), 1900170:1-5 (2019)
[ | | extra | IF: 1.648 ]

798
P. Schlupp, H. von Wenckstern, M. Grundmann
Electrical properties of vertical p-NiO/n-Ga₂O₃ and p-ZnCo₂O₄/n-Ga₂O₃ pn-heterodiodes

Phys. Status Solidi A 216(7), 1800729:1-6 (2019)
[ | | IF: 1.648 ]

797
R. Schmidt-Grund, T. Michalsky, M. Wille, M. Grundmann
Coherent polariton modes and lasing in ZnO nano- and microwires

Phys. Status Solidi B 256(4), 1800462:1-17 (2019)
[ | | IF: 1.522 ]

796
C.E. Precker, J. Barzola-Quiquia, P.D. Esquinazi, M. Stiller, M.K. Chan, M. Jaime, Z. Zhang, M. Grundmann
Record-Breaking Magnetoresistance at the Edge of a Microflake of Natural Graphite
 
Adv. Engin. Mater. 21(12), 1900991:1-6 (2019)
[ | | extra ]

795
M. Grundmann
Copper iodide - very transparent with many holes and no holes at the same time
 
BuildMoNa Annual Report 2017, p. 26-30 (2019)
[ | link ]

794
R. Staacke, R. John, M. Kneiß, M. Grundmann, J. Meijer
Highly transparent conductors for optical and microwave access to spin based quantum systems
NPJ Quantum Information 5, 98:1-5 (2019)
[ | ]

793
Report Halbleiterphysik/Semiconductor Physics 2018
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

792
M. Kneiß, P. Storm, G. Benndorf, M. Grundmann, H. von Wenckstern
Combinatorial material science and strain engineering enabled by pulsed laser deposition using radially segmented targets

ACS Comb. Sci. 20(11), 643-652 (2018)
[ | | IF: 3.032 ]

791
M. Kneiß, C. Yang, J. Barzola-Quiquia, G. Benndorf, H. von Wenckstern, P. Esquinazi, M. Lorenz, M. Grundmann
Suppression of grain boundary scattering in p-type transparent γ-CuI thin films due to interface tunneling currents

Adv. Mater. Interf. 5(6), 1701411:1-12 (2018)
[ | | IF: 4.279 ]

790
A. Jarjour, J.W. Cox, W.T. Ruane, H. von Wenckstern, M. Grundmann, L.J. Brillson
Single Metal Ohmic and Rectifying Contacts to ZnO Nanowires: A Defect Based Approach

Ann. Phys. 530(2), 1700335:1-6 (2018)
[ | | IF: 1.51 ]

789
M. Lorenz, S. Hohenberger, E. Rose, M. Grundmann
Atomically stepped, pseudomorphic, corundum-phase (Al_1-xGa_x)₂O₃ thin films (0 ≤ x < 0.08) grown on R-plane sapphire

Appl. Phys. Lett. 113(23), 231902:1-5 (2018) [Editor's Pick]
[ | | IF: 3.794 ]

788
E. Krüger, V. Zviagin, C. Yang, C. Sturm, R. Schmidt-Grund, M. Grundmann
Temperature dependence of the dielectric function of thin film CuI in the spectral range (0.6-8.3) eV

Appl. Phys. Lett. 113(17), 172102:1-5 (2018)
[ | | IF: 3.794 ]

787
H. Modarresi, E. Menéndez, V.V. Lazenka, N. Pavlovic, M. Bisht, M. Lorenz, C. Petermann, M. Grundmann, A. Hardy, M.K. Van Bael, M.J. Van Bael, A. Vantomme, K. Temst
Morphology-induced spin frustration in granular BiFeO₃ thin films: Origin of the magnetic vertical shift

Appl. Phys. Lett. 113(14), 142402:1-5 (2018)
[ | | IF: 3.794 ]

786
S. Vogt, H. von Wenckstern, M. Grundmann
MESFETs and inverters based on amorphous zinc-tin-oxide thin films prepared at room temperature

Appl. Phys. Lett. 113(13), 133501:1-5 (2018)
[ | | IF: 3.794 ]

785
H. Gao, S. Muralidharan, N. Pronin, M.R. Karim, S.M. White, T. Asel, G. Foster, S. Krishnamoorthy, S. Rajan, L.R. Cao, M. Higashiwaki, H. von Wenckstern, M. Grundmann, H. Zhao, D.C. Look, L.J. Brillson
Optical signatures of deep level defects in Ga₂O₃

Appl. Phys. Lett. 112(24), 242102:1-5 (2018)
[ | | IF: 3.794 ]

784
M. Grundmann
Elastic Theory of Pseudomorphic Monoclinic and Rhombohedral Heterostructures

J. Appl. Phys. 124(18), 185302:1-10 (2018) [invited]
[ | | IF: 2.21 ]

783
V. Prozheeva, R. Hölldobler, H. von Wenckstern, M. Grundmann, F. Tuomisto
Effects of alloy composition and Si-doping on vacancy defect formation in (In_xGa_1-x)₂O₃ thin films

J. Appl. Phys. 123(12), 125705:1-6 (2018)
[ | | IF: 2.21 ]

782
L.J. Brillson, G.M. Foster, J. Cox, W.T. Ruane, A.B. Jarjour, H. Gao, H. von Wenckstern, M. Grundmann, B. Wang, D.C. Look, A. Hyland, M.W. Allen
Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices

J. Electr. Mat. 47(9), 4980-4986 (2018)
[ | | IF: 1.635 ]

781
A. Bouvet-Marchand, A. Graillot, J. Volk, R. Dauksevicius, C. Sturm, E. Saoutieff, A. Viana, B. Christian, V. Lebedev, J. Radó, I.E. Lukács, M. Grundmann, D. Grosso, C. Loubat
Design of UV-Crosslinked Polymeric Thin Layers for Encapsulation of Piezoelectric ZnO Nanowires for Pressure-Based Fingerprint Sensors

J. Mater. Chem. C 6(3), 605-613 (2018)
[ | | IF: 7.059 ]

780
C. Laube, J. Hellweg, C. Sturm, J. Griebel, M. Grundmann, A. Kahnt, B. Abel
Photo-Induced-Heating of Graphitised Nanodiamonds monitored by the Raman-Diamond-Peak

J. Phys. Chem. C 122(44), 25685-25691 (2018)
[ | | IF: 4.814 ]

779
T. Michalsky, M. Wille, M. Grundmann, R. Schmidt-Grund
Tunable and switchable lasing in a ZnO microwire cavity at room temperature

J. Phys. D: Appl. Phys. 51(42), 425305:1-6 (2018)
[ | | IF: 2.772 ]

778
K. Brachwitz, T. Böntgen, J. Lenzner, K. Ghosh, M. Lorenz, M. Grundmann
Evolution of magnetization in epitaxial Zn_1-xFe_xO_z thin films (0 ≤ x ≤ 0.66) grown by pulsed laser deposition

J. Phys. D: Appl. Phys. 51(24), 245003:1-7 (2018)
[ | | IF: 2.772 ]

777
S. Hohenberger, V. Lazenka, K. Temst, C. Patzig, S. Selle, T. Höche, M. Grundmann, M. Lorenz
Effect of double layer thickness on magnetoelectric coupling in multiferroic BaTiO₃-Bi_0.95Gd_0.05FeO₃ multilayers

J. Phys. D: Appl. Phys. 51(18), 184002:1-9 (2018)
[ | | IF: 2.772 ]

776
J.W. Cox, G.M. Foster, A. Jarjour, H. von Wenckstern, M. Grundmann, L.J. Brillson
Defect Manipulation to Control ZnO Micro-/Nanowire - Metal Contacts

Nano Lett. 18(11), 6974-6980 (2018)
[ | | IF: 13.025 ]

775
T. Michalsky, M. Wille, M. Grundmann, R. Schmidt-Grund
Spatiotemporal evolution of coherent polariton modes in ZnO microwire cavities

Nano Lett. 18(11), 6820-6825 (2018)
[ | | IF: 13.025 ]

774
J.K. Jochum, M. Lorenz, H.P. Gunnlaugsson, C. Patzig, T. Höche, M. Grundmann, A. Vantomme, K. Temst, M.J. Van Bael, V. Lazenka
Impact of magnetization and hyperfine field distribution on high magnetoelectric coupling strength in BaTiO₃-BiFeO₃ multilayers

Nanoscale 10(12), 5574-5580 (2018)
[ | | extra | IF: 7.394 ]

773
T. Schulz, S. Bitter, P. Schlupp, H. von Wenckstern, N. Koch, M. Grundmann
The influence of oxygen deficiency on the rectifying behavior of transparent semiconducting oxide-metal interfaces

Phys. Rev. Appl. 9(6), 064001:1-8 (2018) [Editor's Suggestion]
[ | | IF: 4.808 ]

772
S. Prucnal, Y. Berencén, M. Wang, J. Grenzer, M. Voelskow, R. Hübner, Y. Yamamoto, A. Scheit, F. Bärwolf, V. Zviagin, R. Schmidt-Grund, M. Grundmann, J. Żuk, M. Turek, A. Droździel, K. Pyszniak, R. Kudrawiec, M.P. Polak, L. Rebohle, W. Skorupa, M. Helm, S. Zhou
Strain and band gap engineering in GeSn alloys via P doping

Phys. Rev. Appl. 10(6), 064055:1-11 (2018)
[ | | IF: 4.808 ]

771
M. Grundmann
Monolithic Forward-looking Photodetector for Use as Ultra-Compact Wavemeter with Wide Spectral Range

Phys. Status Solidi A 215(24), 1800651:1-5 (2018)
[ | | IF: 1.648 ]

770
T. Jawinski, L.A. Wägele, R. Scheer, M. Grundmann, H. von Wenckstern
Properties of In₂S₃-based pin-heterojunctions

Phys. Status Solidi A 215(11), 1700827:1-6 (2018)
[ | | IF: 1.648 ]

769
R. Pickenhain, M. Schmidt, H. von Wenckstern, G. Benndorf, A. Pöppl, R. Böttcher, M. Grundmann
Negative U Properties of the Deep Level E3 in ZnO

Phys. Status Solidi B 255(7), 1700670:1-16 (2018)
[ | | IF: 1.522 ]

768
D. Splith, S. Müller, H. von Wenckstern, M. Grundmann
Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films

Proc. SPIE 10533, 105330C:1-8 (2018), David J. Rogers, David C. Look, Ferechteh H. Teherani, eds.
[ | ]

767
T. Meister, F. Ellinger, J.W. Bartha, M. Berroth, J. Burghartz, M. Claus, L. Frey, A. Gagliardi, M. Grundmann, J. Hesselbarth, H. Klauk, K. Leo, P. Lugli, S. Mannsfeld, Y. Manoli, R. Negra, D. Neumaier, U. Pfeiffer, T. Riedl, S. Scheinert, U. Scherf, A. Thiede, G. Troester, M. Vossiek, R. Weigel, C. Wenger, G. Alavi, M. Becherer, C.A. Chavarin, M. Darwish, M. Ellinger, C.-Y. Fan, M. Fritsch, F. Grotjahn, M. Gunia, K. Haase, P. Hillger, K. Ishida, M. Jank, S. Knobelspies, M. Kuhl, G. Lupina, S.M. Naghadeh, N. Münzenrieder, S. Özbek, M. Rasteh, G.A. Salvatore, D. Schrüfer, C. Strobel, M. Theisen, C. Tückmantel, H. von Wenckstern, Z. Wang, Z. Zhang
Program FFlexCom
2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), p. 1-4 (2018)
[ | ]

766
S. Richter, J. Zúñiga-Pérez, C. Deparis, L. Trefflich, H.-G. Zirnstein, T. Michalsky, C. Sturm, B. Rosenow, M. Grundmann, R. Schmidt-Grund
Exceptional Points in the Dispersion of Optically Anisotropic Planar Microcavities
IEEE Photonics Society Summer Topical Meeting Series, p. 195-196 (2018), ISBN 978-1-5386-4076-0
[ | ]

765
T. Michalsky, M. Wille, E. Krüger, C. Sturm, M. Grundmann, R. Schmidt-Grund
Coherent polariton states and lasing in ZnO nano- and microstructures
IEEE Photonics Society Summer Topical Meeting Series, p. 171-172 (2018), ISBN 978-1-5386-4076-0
[ | ]

764
Report Halbleiterphysik/Semiconductor Physics 2017
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

763
Report of The Physics Institutes of Universität Leipzig 2017
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

762
S. Bitter, P. Schlupp, H. von Wenckstern, M. Grundmann
The Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc-Tin-Oxide with Various Cation Composition

ACS Appl. Mater. Interfaces 9(31), 26574-26581 (2017)
[ | | IF: 7.504 ]

761
M. Lorenz, D. Hirsch, C. Patzig, T. Höche, S. Hohenberger, H. Hochmuth, V. Lazenka, K. Temst, M. Grundmann
Correlation of interface impurities and chemical gradients with magnetoelectric coupling strength in multiferroic BiFeO₃-BaTiO₃ superlattices

ACS Appl. Mater. Interfaces 9(22), 18956-18965 (2017)
[ | | IF: 7.504 ]

760
C. Sturm, R. Schmidt-Grund, V. Zviagin, M. Grundmann
Temperature dependence of the dielectric tensor of monoclinic dielectric Ga₂O₃ single crystals in the spectral range 0.5-8.5 eV

Appl. Phys. Lett. 111(8), 082102:1-4 (2017)
[ | | IF: 3.794 ]

759
M. Wille, E. Krüger, S. Blaurock, V. Zviagin, R. Deichsel, G. Benndorf, L. Trefflich, V. Gottschalch, H. Krautscheid, R. Schmidt-Grund, M. Grundmann
Lasing in cuprous iodide microwires

Appl. Phys. Lett. 111(3), 031105:1-5 (2017)
[ | | IF: 3.794 ]

758
M. Lorenz, J. Barzola-Quiquia, C. Yang, C. Patzig, T. Höche, P. Esquinazi, M. Grundmann, H. Wei
Charge transfer-induced magnetic exchange bias and electron localization in (111)- and (001)-oriented LaNiO₃/LaMnO₃ superlattices

Appl. Phys. Lett. 110(10), 102403:1-5 (2017)
[ | | IF: 3.794 ]

757
V. Lazenka, M. Lorenz, H. Modarresi, J.K. Jochum, H.P. Gunnlaugsson, M. Grundmann, M.J. Van Bael, K. Temst, A. Vantomme
Interface induced out-of-plane magnetic anisotropy in magnetoelectric BiFeO₃-BaTiO₃ superlattices

Appl. Phys. Lett. 110(9), 092902:1-5 (2017)
[ | | IF: 3.794 ]

756
C. Sturm, M. Wille, J. Lenzner, S. Khujanov, M. Grundmann
Non-linear optical deformation potentials in uniaxially strained ZnO microwires

Appl. Phys. Lett. 110(6), 062103:1-4 (2017)
[ | | IF: 3.794 ]

755
Y. Kumar, I. Lorite, M. Lorenz, P.D. Esquinazi, M. Grundmann
Effect of annealing on the magnetic properties of zinc ferrite thin films

arxiv: 1702.06033 (2017)
[ | link ]

754
K. Dorywalski, N. Lemée, B. Andriyevsky, R. Schmidt-Grund, M. Grundmann, M. Piasecki, M. Bousquet, T. Krzyżyński
Optical properties of epitaxial Na_0.5Bi_0.5TiO₃ lead-free piezoelectric thin films: Ellipsometric and theoretical studies

Appl. Surf. Sci. 421(B), 367-372 (2017)
[ | | IF: 2.112 ]

753
M. Welke, K. Brachwitz, M. Lorenz, M. Grundmann, K.-M. Schindler, A. Chasse, R. Denecke
Structure and cation distribution in (Mn_0.5Zn_0.5)Fe₂O₄ thin films on SrTiO₃(001)

J. Appl. Phys. 121(22), 225305:1-7 (2017)
[ | | IF: 2.21 ]

752
V. Gottschalch, S. Blaurock, G. Benndorf, J. Lenzner, M. Grundmann, H. Krautscheid
Copper Iodide synthesized by iodization of Cu-films and deposited using MOCVD

J. Cryst. Growth 471, 21-28 (2017)
[ | | IF: 1.552 ]

751
M. Lorenz, H. Wei, F. Jung, S. Hohenberger, H. Hochmuth, M. Grundmann
Two-dimensional Frank - van der Merwe growth of functional oxide and nitride thin film superlattices by pulsed laser deposition

J. Mat. Res. 32(21), 3936-3946 (2017)
[ | | IF: 1.713 ]

750
H. Wei, C. Yang, J.L. Barzola-Quiquia, M. Welke, R. Denecke, C. Patzig, T. Höche, P. Esquinazi, M. Grundmann, M. Lorenz
Ferromagnetic phase transition and single-gap type electrical conductivity of epitaxial LaMnO₃/LaAlO₃ superlattices

J. Phys. D: Appl. Phys. 50(43), 43LT02:1-6 (2017)
[ | | IF: 2.772 ]

749
L. Vines, C. Bhoodoo, H. von Wenckstern, M. Grundmann
Electrical conductivity of In₂O₃ and Ga₂O₃ after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level

J. Phys. D: Appl. Phys. 30(2), 025502:1-6 (2017)
[ | | IF: 2.772 ]

748
C. Yang, D. Souchay, M. Kneiß, M. Bogner, H.M. Wei, M. Lorenz, O. Oeckler, G. Benstetter, Y.Q. Fu, M. Grundmann
Transparent Flexible Thermoelectric Material Based on Non-toxic Earth-Abundant p-Type Copper Iodide Thin Film

Nature Commun. 8, 16076:1-7 (2017)
[ | | extra | IF: 12.001 ]

747
M. Zapf, R. Röder, K. Winkler, L. Kaden, J. Greil, M. Wille, M. Grundmann, R. Schmidt-Grund, A. Lugstein, C. Ronning
Dynamical Tuning of Nanowire Lasing Spectra

Nano Lett. 17(11), 6637-6643 (2017)
[ | | IF: 13.025 ]

746
A. Shkurmanov, C. Sturm, H. Franke, J. Lenzner, M. Grundmann
Low temperature PLD-growth of ultrathin ZnO nanowires by using Zn_xAl_1-xO and Zn_xGa_1-xO seed layers

Nanoscale Res. Lett. 12, 134:1-7 (2017)
[ | | IF: 2.584 ]

745
A. deP. Martín, M. Lorenz, M. Grundmann, Th. Höche
Laser Welding of Fused Silica Glass with Sapphire Using a Non- Stoichiometric, Fresnoitic Ba₂TiSi₂O₈

Optics & Laser Technol. 92, 85-94 (2017)
[ | | IF: 1.647 ]

744
S. Richter, T. Michalsky, C. Sturm, B. Rosenow, M. Grundmann, R. Schmidt-Grund
Erratum: Exceptional points in anisotropic planar microcavities

Phys. Rev. A 96(5), 059902E:1-2 (2017)
[ | | IF: 3.042 ]

743
S. Richter, T. Michalsky, C. Sturm, B. Rosenow, M. Grundmann, R. Schmidt-Grund
Exceptional points in anisotropic planar microcavities

Phys. Rev. A 95(2), 023836:1-9 (2017)
[ | | IF: 3.042 ]

742
P. Schlupp, H. von Wenckstern, M. Grundmann
Schottky barrier diodes based on room temperature fabricated amorphous zinc tin oxide thin film

Phys. Status Solidi A 214(10), 1700210:1-8 (2017)
[ | | IF: 1.648 ]

741
M. Grundmann
Strain in Pseudomorphic Monoclinic Ga₂O₃-based Heterostructures

Phys. Status Solidi B 254(9), 1700134:1-7 (2017)
[ | | IF: 1.522 ]

740
M. Grundmann, C. Sturm, C. Kranert, S. Richter, R. Schmidt-Grund, C. Deparis, J. Zúñiga-Pérez
Optically Anisotropic Media: New Approaches to the Dielectric Function, Singular Axes, Raman Scattering Intensities and Microcavity Modes
 
Phys. Status Solidi RRL 11(1), 1600295:1-19 (2017)
[ | | extra | IF: 2.58 ]

739
M. Grundmann, S. Richter, T. Michalsky, C. Sturm, J. Zúñiga-Pérez, R. Schmidt-Grund
Exceptional points in anisotropic photonic structures: From non-Hermitian physics to possible device applications

Proc. SPIE 10105, 101050K:1-8 (2017), Ferechteh H. Teherani, David C. Look, David J. Rogers, eds.
[ | ]

738
S. Müller, H. von Wenckstern, F. Schmidt, D. Splith, H. Frenzel, M. Grundmann
Method of choice for fabrication of high-quality β-gallium oxide-based Schottky diodes

Semic. Sci. Technol. 32(6), 065013:1-8 (2017)
[ | | IF: 2.098 ]

737
T. Lühmann, R. Wunderlich, R. Schmidt-Grund, J. Barzola-Quiquia, P. Esquinazi, M. Grundmann, J. Meijer
Investigation of the graphitization process of ion-beam irradiated diamond using ellipsometry, Raman spectroscopy and electrical transport measurements
Carbon 121, 512-517 (2017)
[ | ]

736
Y. Kumar, I. Lorite, M. Lorenz, P. Esquinazi, M. Grundmann
Effect of annealing on the magnetic properties of zinc ferrite thin films
Mater. Lett. 195, 89-91 (2017)
[ | ]

735
H.-E. Zschau, M. Schütze, M.C. Galetz, B.M. Gleeson, S. Neve, M. Lorenz, M. Grundmann
Surface Chemistry Evolution of F-doped Ni-base Superalloy upon Heat Treatment
Materials and Corrosion 68(2), 220-227 (2017)
[ | ]

734
Report Halbleiterphysik/Semiconductor Physics 2016
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

733
Report of The Physics Institutes of Universität Leipzig 2016
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

732
M. Grundmann
Felix Bloch (1905-1983) in Leipzig (in English)
 
WWW homepage of Felix Bloch Institute for Solid State Physics of Universität Leipzig:1-4
[ | link ]

731
M. Grundmann
Felix Bloch (1905-1983) in Leipzig (in German)
 
WWW-Seite des Felix-Bloch-Institut für Festkörperphysik der Universität Leipzig:1-4
[ | link ]

730
M. Grundmann
The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 3rd edition
 
(Springer, Heidelberg, 2016), ISBN 978-3-319-23879-1
[ link | | extra ]

729
N. Petkov, J. Volk, R. Erdélyi, I.E. Lukács, T. Nagata, C. Sturm, M. Grundmann
Contacting ZnO individual crystal facets by direct write lithography

ACS Appl. Mater. Interfaces 8(36), 23891-23898 (2016)
[ | | IF: 7.504 ]

728
S. Bitter, P. Schlupp, M. Bonholzer, H. von Wenckstern, M. Grundmann
Influence of the cation ratio on optical and electrical properties of zinc-tin-oxide thin films from pulsed-laser deposition

ACS Comb. Sci. 18(4), 188-194 (2016)
[ | | IF: 3.032 ]

727
F.J. Klüpfel, H. von Wenckstern, M. Grundmann
Ring Oscillators based on ZnO Channel JFETs and MESFETs
 
Adv. Electron. Mater. 2(7), 1500431:1-5 (2016)
[ | | extra | IF: 6.312 ]

726
M. Lorenz, V. Lazenka, P. Schwinkendorf, M.J. Van Bael, A. Vantomme, K. Temst, M. Grundmann, T. Höche
Epitaxial coherence at interfaces as origin of high magnetoelectric coupling in multiferroic BaTiO₃ - BiFeO₃ superlattices

Adv. Mater. Interf. 3(11), 1500822:1-7 (2016)
[ | | extra | IF: 4.279 ]

725
M. Stiller, J. Barzola-Quiquia, P. Esquinazi, D. Spemann, J. Meijer, M. Lorenz, M. Grundmann
Strong out-of-plane magnetic anisotropy in ion irradiated anatase TiO₂ thin films

AIP Adv. 6(12), 125009:1-13 (2016)
[ | | IF: 1.444 ]

724
A. Shkurmanov, C. Sturm, J. Lenzner, G. Feuillet, F. Tendille, P. De Mierry, M. Grundmann
Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates

AIP Adv. 6(9), 095013:1-5 (2016)
[ | | IF: 1.444 ]

723
H. Wei, M. Grundmann, M. Lorenz
Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO₃/ LaAlO₃ (111) superlattices

Appl. Phys. Lett. 109(8), 082108:1-5 (2016)
[ | | IF: 3.794 ]

722
M. Wille, T. Michalsky, E. Krüger, M. Grundmann, R. Schmidt-Grund
Absorptive lasing mode suppression in ZnO nano- and microcavities

Appl. Phys. Lett. 109(6), 061102:1-4 (2016)
[ | | IF: 3.794 ]

721
I. Lorite, Y. Kumar, P. Esquinazi, S. Friedländer, A. Pöppl, T. Michalsky, J. Meijer, M. Grundmann, T. Mayer
Photo-enhanced magnetization in Fe-doped ZnO nanowires

Appl. Phys. Lett. 109(1), 012401:1-4 (2016)
[ | | IF: 3.794 ]

720
J. Zúñiga-Pérez, L. Kappei, C. Deparis, F. Reveret, M. Grundmann, E. de Prado, O. Jamadi, J. Leymarie, S. Chenot, M. Leroux
Homoepitaxial nonpolar (10-10) ZnO/ZnMgO heterostructures: from single layers to monolithic Bragg reflectors and optical microcavities

Appl. Phys. Lett. 108(25), 251904:1-5 (2016)
[ | | IF: 3.794 ]

719
Z. Zhang, H. von Wenckstern, J. Lenzner, M. Grundmann
Wavelength-selective ultraviolet (Mg,Zn)O photodiodes: Tuning of parallel composition gradients with oxygen pressure

Appl. Phys. Lett. 108(24), 243503:1-5 (2016)
[ | | IF: 3.794 ]

718
V. Zviagin, Y. Kumar, I. Lorite, P. Esquinazi, M. Grundmann, R. Schmidt-Grund
Ellipsometric Investigation of ZnFe₂O₄ Thin Films in Relation to Magnetic Properties

Appl. Phys. Lett. 108(13), 131901:1-4 (2016)
[ | | IF: 3.794 ]

717
Z. Zhang, H. von Wenckstern, J. Lenzner, M. Lorenz, M. Grundmann
Visible-blind and solar-blind ultraviolet photodiodes based on (In_xGa_1-x)₂O₃

Appl. Phys. Lett. 108(12), 123503:1-5 (2016)
[ | | IF: 3.794 ]

716
R. Khazaka, M. Grundmann, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, J.-F. Michaud
Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C SiC(001)

Appl. Phys. Lett. 108(1), 011608:1-4 (2016)
[ | | IF: 3.794 ]

715
S. Richter, T. Michalsky, C. Sturm, B. Rosenow, M. Grundmann, R. Schmidt-Grund
Exceptional points in anisotropic planar microcavities

arxiv: 1609.07653 (2016)
[ | link ]

714
C. Kranert, C. Sturm, R. Schmidt-Grund, M. Grundmann
Raman tensor elements of β-Ga₂O₃

arxiv: 1606.07409 (2016)
[ | link ]

713
I. Lorite, Y. Kumar, P. Esquinazi, S. Friedländer, A. Pöppl, T. Michalsky, J. Meijer, M. Grundmann, T. Meyer, I. Estrela-Lopis
Photo-enhanced magnetization in Fe-doped ZnO nanowires

arxiv: 1606.06955 (2016)
[ | link ]

712
M. Jenderka, S. Richter, M. Lorenz, M. Grundmann
Fundamental absorption edges in heteroepitaxial Y₁Bi₁O₃ thin films

arxiv: 1606.03945 (2016)
[ | link ]

711
T. Michalsky, H. Franke, R. Buschlinger, U. Peschel, M. Grundmann, R. Schmidt-Grund
Coexistence of strong and weak coupling in ZnO nanowire cavities

arxiv: 1602.06804 (2016)
[ | link ]

710
C. Sturm, R. Schmidt-Grund, C. Kranert, J. Furthmüller, F. Bechstedt, M. Grundmann
Dipole Analysis of the Dielectric Function of Colour Dispersive Materials: Application to Monoclinic Ga₂O₃

arxiv: 1601.07892 (2016)
[ | link ]

709
M. Wille, C. Sturm, T. Michalsky, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann
Carrier density driven material dynamics of lasing ZnO Nanowires

arxiv: 1601.03866 (2016)
[ | link ]

708
M. Grundmann, C. Sturm
The Singular Optical Axes in Biaxial Crystals and Analysis of Their Spectral Dispersion Effects in β-Ga₂O₃

arxiv: 1601.03760:1-7 (2016)
[ | link ]

707
T. Michalsky, H. Franke, R. Buschlinger, U. Peschel, M. Grundmann, R. Schmidt-Grund
Coexistence of strong and weak coupling in ZnO nanowire cavities

Eur. Phys. J. Appl. Phys. 74(3), 30502:1-10 (2016)
[ | | IF: 0.667 ]

706
A. Mavlonov, S. Richter, H. von Wenckstern, R. Schmidt-Grund, M. Lorenz, M. Grundmann
Temperature dependent self-compensation in Al and Ga-doped Mg_0.05Zn_0.95O thin films grown by pulsed laser deposition

J. Appl. Phys. 120(20), 205703:1-6 (2016)
[ | | IF: 2.21 ]

705
M. Jenderka, S. Richter, M. Lorenz, M. Grundmann
Fundamental absorption edges in heteroepitaxial YBiO₃ thin films

J. Appl. Phys. 120(12), 125702:1-4 (2016)
[ | | IF: 2.21 ]

704
K. Narushima, Y. Ashizawa, K. Brachwitz, H. Hochmuth, M. Lorenz, M. Grundmann, K. Nakagawa
Magnetic activity of surface plasmon resonance using dielectric magnetic materials fabricated on quartz glass substrate

Jpn. J. Appl. Phys. 55(7S3), 07MC05:1-4 (2016)
[ | | IF: 1.067 ]

703
M. Lorenz, M.S.R. Rao, T. Venkatesan, E. Fortunato, P. Barquinha, R. Branquinho, D. Salgueiro, R. Martins, E. Carlos, A. Liu, F.K. Shan, M. Grundmann, H. Boschker, J. Mukherjee, M. Priyadarshini, N. DasGupta, D.J. Rogers, F.H. Teherani, E.V. Sandana, P. Bove, K. Rietwyk, A. Zaban, A. Veziridis, A. Weidenkaff, M. Muralidhar, M. Murakami, S. Abel, J. Fompeyrine, J. Zúñiga-Pérez, R. Ramesh, N.A. Spaldin, S. Ostanin, V. Borisov, I. Mertig, V. Lazenka, G. Srinivasan, W. Prellier, M. Uchida, M. Kawasaki, R. Pentcheva, P. Gegenwart, F.M. Granozio, J. Fontcuberta, N. Pryds
The 2016 oxide electronic materials and oxide interfaces roadmap (ch. 3, M. Grundmann: Bipolar oxide devices)
 
J. Phys. D: Appl. Phys. 49(43), 433001:1-53 (2016)
[ | | extra | IF: 2.772 ]

702
H. Modarresi, V. Lazenka, E. Menéndez, M. Lorenz, M. Bisht, A. Volodin, C. Van Haesendonck, M. Grundmann, M.J. Van Bael, K. Temst, A. Vantomme
Induced ferromagnetism and magnetoelectric coupling in ion-beam synthesized BiFeO₃-CoFe₂O₄ nanocomposite thin films

J. Phys. D: Appl. Phys. 49(32), 325302:1-6 (2016)
[ | | IF: 2.772 ]

701
M. Grundmann, F. Klüpfel, R. Karsthof, P. Schlupp, F.-L. Schein, D. Splith, C. Yang, S. Bitter, H. von Wenckstern
Oxide Bipolar Electronics: Materials, Devices and Circuits

J. Phys. D: Appl. Phys. 49(21), 213001:1-25 (2016) [Topical Review]
[ | | IF: 2.772 ]

700
R. Karsthof, H. von Wenckstern, M. Grundmann
Semi-transparent ZnO-based UV-active solar cells: Analysis of electrical loss mechanisms

J. Vac. Sci. Technol. B 34(4), 04J107:1-8 (2016)
[ | | IF: 1.267 ]

699
M. Lorenz, G. Wagner, V. Lazenka, P. Schwinkendorf, M. Bonholzer, M.J. Van Beal, A. Vantomme, K. Temst, O. Oeckler, M. Grundmann
Correlation of high magnetoelectric coupling with oxygen vacancy superstructure in epitaxial multiferroic BaTiO₃-BiFeO₃ composite thin films

Materials 9(1), 44:1-13 (2016)
[ | | extra | IF: 2.247 ]

698
A. de Pablos-Martín, S. Tismer, F. Naumann, M. Krause, M. Lorenz, M. Grundmann, T. Höche
Evaluation of the Bond Quality of Laser-Joined Sapphire Wafers using a Fresnoite-Glass Sealant

Microsyst. Technol. 22(1), 207-214 (2016)
[ | | IF: 0.952 ]

697
L. Brillson, W.T. Ruane, H. Gao, Y. Zhang, J. Luo, H. von Wenckstern, M. Grundmann
Spatially-Resolved Cathodoluminescence Spectroscopy of ZnO Defects

Mat. Sci. Semic. Process. 57, 197-209 (2016)
[ | | IF: 2.264 ]

696
W.T. Ruane, K.M. Johansen, K. Leedy, D.C. Look, H. von Wenckstern, M. Grundmann, L.J. Brillson
Defect Segregation and Optical Emission in ZnO Nano- and Microwires

Nanoscale 8(14), 7631-7637 (2016)
[ | | IF: 7.394 ]

695
M. Wille, C. Sturm, T. Michalsky, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann
Carrier density driven material dynamics of lasing ZnO Nanowires

Nanotechnology 27(22), 225702:1-7 (2016)
[ | | IF: 3.842 ]

694
A. de Pablos-Martin, S. Tismer, G. Benndorf, M. Mittag, M. Lorenz, M. Grundmann, Th. Höche
Laser soldering of sapphire substrates using a BaTiAl₆O₁₂ thin-film glass sealant

Optics & Laser Technol. 81, 153-161 (2016)
[ | | IF: 1.647 ]

693
A. de Pablos-Martin, G. Benndorf, S. Tismer, M. Mittag, A. Cismak, M. Lorenz, M. Grundmann, Th. Höche
Laser-Welded Fused Silica Substrates Using a Luminescent Fresnoite-Based Sealant

Optics & Laser Technol. 80, 176-185 (2016)
[ | | IF: 1.647 ]

692
C. Yang, M. Kneiß, M. Lorenz, M. Grundmann
Room-temperature Synthesized Copper Iodide Thin Film as Degenerate p-Type Transparent Conducting Material with a Boosted Figure of Merit

PNAS 113(46), 12929-12933 (2016)
[ | | IF: 9.423 ]

691
C. Sturm, M. Grundmann
The Singular Optical Axes in Biaxial Crystals and Analysis of Their Spectral Dispersion Effects in β-Ga₂O₃

Phys. Rev. A 93(5), 053839:1-8 (2016)
[ | | extra | IF: 3.042 ]

690
C. Sturm, R. Schmidt-Grund, C. Kranert, J. Furthmüller, F. Bechstedt, M. Grundmann
Dipole analysis of the dielectric function of color dispersive materials: Application to monoclinic Ga₂O₃

Phys. Rev. B 94(3), 035148:1-11 (2016)
[ | | IF: 3.767 ]

689
M. Thunert, A. Janot, H. Franke, C. Sturm, T. Michalsky, M.D. Martín, L. Viña, B. Rosenow, M. Grundmann, R. Schmidt-Grund
Cavity Polariton Condensate in a Disordered Environment

Phys. Rev. B 93(6), 064203:1-12 (2016)
[ | | IF: 3.767 ]

688
C. Kranert, C. Sturm, R. Schmidt-Grund, M. Grundmann
Raman Tensor Formalism for Optically Anisotropic Crystals

Phys. Rev. Lett. 116(12), 127401:1-5 (2016)
[ | | extra | IF: 7.645 ]

687
R. Karsthof, P. Räcke, Z. Zhang, H. von Wenckstern, M. Grundmann
Semi-transparent n-ZnO/p-NiO UV solar cells
 
Phys. Status Solidi A 213(1), 30-37 (2016)
[ | | extra | IF: 1.648 ]

686
A. Reinhardt, H. Frenzel, H. von Wenckstern, D. Spemann, M. Grundmann
Electron transport mechanism in rf-sputtered amorphous zinc oxynitride thin films

Phys. Status Solidi A 213(7), 1767-1773 (2016)
[ | | IF: 1.648 ]

685
V. Zviagin, P. Richter, T. Böntgen, M. Lorenz, M. Ziese, D.R.T. Zahn, G. Salvan, M. Grundmann, R. Schmidt-Grund
Comparative Study of Optical and Magneto-Optical Properties of Normal, Disordered and Inverse Spinel Type Oxides

Phys. Status Solidi B 253(3), 429-436 (2016)
[ | | IF: 1.522 ]

684
M. Grundmann, J. Zúñiga-Pérez
Pseudomorphic ZnO-based heterostructures: from polar through all semipolar to nonpolar orientations

Phys. Status Solidi B 253(2), 351-360 (2016)
[ | | IF: 1.522 ]

683
C. Kranert, C. Sturm, R. Schmidt-Grund, M. Grundmann
Raman tensor elements of β-Ga₂O₃

Sci. Rep. 6, 35964:1-9 (2016)
[ | | IF: 5.578 ]

682
C. Yang, M. Kneiß, F.-L. Schein, M. Lorenz, M. Grundmann
Room-temperature domain-epitaxy of copper iodide thin films for transparent CuI/ZnO heterojunctions with high rectification ratios larger than 10⁹

Sci. Rep. 6, 21937:1-8 (2016)
[ | | extra | IF: 5.578 ]

681
M. Grundmann
Don't mourn the losses
 
BuildMoNa Annual Report 2016, p. 26-29 (2016)
[ | link ]

680
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern
TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE
JP 5897621 B2 (Japan Patent Office, 2016)
[ ]

679
A. Shkurmanov, C. Sturm, H. Hochmuth, M. Grundmann
Growth kinetics of ultrathin ZnO Nanowires grown by Pulsed Laser Deposition
Proc. Eng. 168, 1156-1159 (2016)
[ | ]

678
Report Halbleiterphysik/Semiconductor Physics 2015
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

677
Report of The Physics Institutes of Universität Leipzig 2015
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

676
H. von Wenckstern, D. Splith, A. Werner, S. Müller, M. Lorenz, M. Grundmann
Properties of Schottky barrier diodes on (In_xGa_1-x)₂O₃ for 0.01 ≤ x ≤ 0.85 determined by using a combinatorial approach

ACS Comb. Sci. 17(12), 710-715 (2015)
[ | | IF: 3.032 ]

675
H. von Wenckstern, D. Splith, S. Lanzinger, F. Schmidt, S. Müller, P. Schlupp, R. Karsthof, M. Grundmann
pn-heterodiodes with n-type In₂O₃

Adv. Electron. Mater. 1(4), 1400026:1-6 (2015)
[ | | IF: 6.312 ]

674
P. Schlupp, F.-L. Schein, H. von Wenckstern, M. Grundmann
All Amorphous Oxide Bipolar Heterojunction Diodes from Abundant Metals

Adv. Electron. Mater. 1(1-2), 1400023:1-5 (2015)
[ | | IF: 6.312 ]

673
S. Schubert, F. Schmidt, H. von Wenckstern, M. Grundmann, K. Leo, L. Müller-Meskamp
Eclipse Pulsed Laser Deposition for Damage-Free Preparation of Transparent ZnO Electrodes on Top of Organic Solar Cells

Adv. Funct. Mater. 25(27), 4321-4327 (2015)
[ | | IF: 10.4 ]

672
S. Müller, H. von Wenckstern, F. Schmidt, D. Splith, F.-L. Schein, H. Frenzel, M. Grundmann
Comparison of Schottky contacts on β-gallium oxide thin films and bulk crystals

Appl. Phys. Expr. 8(12), 121102:1-4 (2015)
[ | | IF: 2.567 ]

671
R. Schewski, G. Wagner, M. Baldini, D. Gogova, Z. Galazka, T. Schulz, T. Remmele, T. Markurt, H. von Wenckstern, M. Grundmann, O. Bierwagen, P. Vogt, M. Albrecht
Epitaxial stabilization of pseudomorphic α-Ga₂O₃ on sapphire (0001)

Appl. Phys. Expr. 8(1), 011101:1-4 (2015)
[ | | IF: 2.567 ]

670
S. Richter, T. Michalsky, L. Fricke, C. Sturm, H. Franke, M. Grundmann, R. Schmidt-Grund
Maxwell consideration of polaritonic quasi-particle Hamiltonians in multi-level systems

Appl. Phys. Lett. 107(23), 231104:1-5 (2015)
[ | | IF: 3.794 ]

669
V. Lazenka, M. Lorenz, H. Modarresi, M. Bisht, R. Rüffer, M. Bonholzer, M. Grundmann, M.J. Van Bael, A. Vantomme, K. Temst
Magnetic spin structure and magnetoelectric coupling in BiFeO₃-BaTiO₃ multilayer

Appl. Phys. Lett. 106(8), 082904:1-4 (2015)
[ | | IF: 3.794 ]

668
H. Wei, M. Jenderka, M. Bonholzer, M. Grundmann, M. Lorenz
Modeling the conductivity around the dimensionality-controlled metal-insulator transition in LaNiO₃/LaAlO₃ (100) superlattices

Appl. Phys. Lett. 106(4), 042103:1-5 (2015)
[ | | IF: 3.794 ]

667
F.J. Klüpfel, H. von Wenckstern, M. Grundmann
Low Frequency Noise of ZnO based MESFETs

Appl. Phys. Lett. 106(3), 033502:1-4 (2015)
[ | | IF: 3.794 ]

666
M. Lorenz, G. Wagner, V. Lazenka, P. Schwinkendorf, H. Modarresi, M.J. Van Bael, A. Vantomme, K. Temst, O. Oeckler, M. Grundmann
Correlation of magnetoelectric coupling in multiferroic BaTiO₃-BiFeO₃ superlattices with oxygen vacancies and antiphase octahedral rotations

Appl. Phys. Lett. 106(1), 012905:1-5 (2015)
[ | | extra | IF: 3.794 ]

665
C. Sturm, J. Furthmüller, F. Bechstedt, R. Schmidt-Grund, M. Grundmann
Dielectric tensor of monoclinic Ga₂O₃ single crystals in the spectral range 0.5-8.5 eV

APL Mater. 3(10), 106106:1-9 (2015)
[ | | IF: 4.323 ]

664
C. Sturm, J. Furthmüller, F. Bechstedt, R. Schmidt-Grund, M. Grundmann
Dielectric tensor of monoclinic Ga₂O₃ single crystals in the spectral range 0.5-8.5eV

arxiv: 1507.05401 (2015)
[ | link ]

663
V. Zviagin, P. Richter, T. Böntgen, M. Lorenz, M. Ziese, D.R.T. Zahn, G. Salvan, M. Grundmann, R. Schmidt-Grund
Comparative Study of Optical and Magneto-Optical Properties of Normal, Disordered and Inverse Spinel Type Oxides

arxiv: 1505.04664 (2015)
[ | link ]

662
I. Lorite, C. Zandalazini, P. Esquinazi, D. Spemann, S. Friedländer, A. Pöppl, T. Michalsky, M. Grundmann, J. Vogt, J. Meijer, S.P. Heluani, H. Ohldag, W.A. Adeagbo, S.K. Nayak, W. Hergert, A. Ernst, M. Hoffmann
Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires

arxiv: 1504.08230 (2015)
[ | link ]

661
S. Richter, S.G. Ebbinghaus, M. Grundmann, R. Schmidt-Grund
Antiferromagnetic phase transition in the temperature-dependent NIR-VUV dielectric function of hexagonal YMnO₃

arxiv: 1503.04043 (2015)
[ | link ]

660
T. Michalsky, H. Franke, C. Sturm, M. Grundmann, R. Schmidt-Grund
Discrete relaxation of exciton-polaritons in an inhomogeneous potential

arxiv: 1501.02644 (2015)
[ | link ]

659
C.P. Dietrich, R. Schmidt-Grund, T. Michalsky, M. Lange, M. Grundmann
Room-temperature condensation in whispering gallery microresonators assisted by longitudinal optical phonons

arxiv: 1501.01255:1-11 (2015)
[ | link ]

658
F.J. Klüpfel, A. Holtz, F.-L. Schein, H. von Wenckstern, M. Grundmann
All-Oxide Inverters Based On ZnO Channel JFETs With Amorphous ZnCo₂O₄ Gates

IEEE Transact. Electr. Dev. 62(12), 4004-4008 (2015)
[ | | IF: 2.062 ]

657
R. Karsthof, H. von Wenckstern, M. Grundmann
Transparent JFETs Based on p-NiO/n-ZnO Heterojunctions

IEEE Transact. Electr. Dev. 62(12), 3999-4003 (2015)
[ | | IF: 2.062 ]

656
R. Schmidt-Grund, C. Kranert, H. von Wenckstern, V. Zviagin, M. Grundmann
Dielectric function in the spectral range (0.5-8.5)eV of an (Al_xGa_1-x)₂O₃ thin film with continuous composition spread

J. Appl. Phys. 117(16), 165307:1-7 (2015)
[ | | IF: 2.21 ]

655
C. Kranert, M. Jenderka, J. Lenzner, M. Lorenz, H. von Wenckstern, R. Schmidt-Grund, M. Grundmann
Lattice parameters and Raman-active phonon modes of β-(Al_xGa_1-x)₂O₃

J. Appl. Phys. 117(12), 125703:1-6 (2015)
[ | | IF: 2.21 ]

654
M. Jenderka, R. Schmidt-Grund, M. Grundmann, M. Lorenz
Electronic excitations and structure of Li₂IrO₃ thin films grown on ZrO₂:Y (001) substrates

J. Appl. Phys. 117(2), 025304:1-5 (2015)
[ | link | | IF: 2.21 ]

653
R. Böttcher, M. Lorenz, A. Pöppl, D. Spemann, M. Grundmann
Local zinc blende coordination in heteroepitaxial wurtzite Zn_1-xMg_xO:Mn thin films with 0.01 ≤ x ≤ 0.04 identified by electron paramagnetic resonance

J. Mater. Chem. C 3(45), 11918-11929 (2015)
[ | | IF: 7.059 ]

652
I. Lorite, C. Zandalazini, P. Esquinazi, D. Spemann, S. Friedländer, A. Pöppl, T. Michalsky, M. Grundmann, J. Vogt, J. Meijer, S.P. Heluani, H. Ohldag, W.A. Adeagbo, S.K. Nayak, W. Hergert, A. Ernst, M. Hoffmann
Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires

J. Phys.: Condens. Matter 27(25), 256002:1-6 (2015)
[ | | IF: 2.721 ]

651
C. Kranert, R. Schmidt-Grund, M. Grundmann
Free charge carriers as origin for redshift of LO modes in wurtzite semiconductors excited above the band gap

J. Raman Spectr. 46(1), 167-170 (2015)
[ | | IF: 2.519 ]

650
A. de Pablos-Martin, M. Ebert, C. Patzig, M. Krause, M. Dyrba, P. Miclea, M. Lorenz, M. Grundmann, Th. Höche
Laser Welding of Sapphire Wafers Using a Thin-Film Fresnoite Glass Solder

Microsyst. Technol. 21(5), 1035-1045 (2015)
[ | | IF: 0.952 ]

649
C.P. Dietrich, R. Johne, T. Michalsky, C. Sturm, P. Eastham, H. Franke, M. Lange, M. Grundmann, R. Schmidt-Grund
Parametric relaxation in whispering-gallery mode exciton-polariton condensates

Phys. Rev. B 91(4), 041202(R):1-6 (2015)
[ | | IF: 3.767 ]

648
A. Mavlonov, S. Richter, H. von Wenckstern, R. Schmidt-Grund, J. Lenzner, M. Lorenz, M. Grundmann
Doping efficiency and limits in (Mg,Zn)O:Al,Ga thin films with two-dimensional lateral composition spread

Phys. Status Solidi A 212(12), 2850-2855 (2015)
[ | | IF: 1.648 ]

647
H. Wei, M. Jenderka, M. Grundmann, M. Lorenz
LaNiO₃ films with tunable out-of-plane lattice parameter and their strain-related electrical properties

Phys. Status Solidi A 212(9), 1925-1930 (2015)
[ | | IF: 1.648 ]

646
H. Frenzel, T. Dörfler, P. Schlupp, H. von Wenckstern, M. Grundmann
Long-throw magnetron sputtering of amorphous Zn-Sn-O-thin films at room temperature

Phys. Status Solidi A 212(7), 1482-1486 (2015)
[ | | IF: 1.648 ]

645
M. Lorenz, T. Weiss, F. Schmidt, H. von Wenckstern, M. Grundmann
Aluminium- and gallium-doped homoepitaxial ZnO thin films: Strain-engineering and electrical performance

Phys. Status Solidi A 212(7), 1440-1447 (2015)
[ | | IF: 1.648 ]

644
M. Grundmann
Karl Bädeker (1877-1914) and the discovery of transparent conductive materials

Phys. Status Solidi A 212(7), 1409-1426 (2015)
[ | | extra | IF: 1.648 ]

643
M. Grundmann, A. Rahm, H. von Wenckstern
Transparent Conductive Oxides - Preface
 
Phys. Status Solidi A 212(7), 1408 (1 page) (2015)
[ | | extra | IF: 1.648 ]

642
Special section on Transparent Conductive Oxides
 
Phys. Status Solidi A 212(7), 1407-1498 (2015), Marius Grundmann, Andreas Rahm, Holger von Wenckstern, eds.
[ | | extra | IF: 1.648 ]

641
M. Grundmann
Theory of Semiconductor Solid and Hollow Nano- and Microwires With Hexagonal Cross-Section Under Torsion
 
Phys. Status Solidi B 252(4), 773-785 (2015)
[ | | extra | IF: 1.522 ]

640
F. Schmidt, D. Splith, S. Müller, H. von Wenckstern, M. Grundmann
Electronic defects in In₂O₃ and In₂O₃:Mg thin films on r-plane sapphire

Phys. Status Solidi B 252(10), 2304-2308 (2015)
[ | | IF: 1.522 ]

639
H. von Wenckstern, D. Splith, M. Purfürst, Z. Zhang, C. Kranert, S. Müller, M. Lorenz, M. Grundmann
Structural and optical properties of (In,Ga)₂O₃ thin films and characteristics of Schottky contacts thereon

Semic. Sci. Technol. 30(2), 024005:1-7 (2015)
[ | | IF: 2.098 ]

638
M. Lorenz, H. Hochmuth, M. Kneiß, M. Bonholzer, M. Jenderka, M. Grundmann
From high-T_C superconductors to highly correlated Mott insulators - 25 years of pulsed laser deposition of functional oxides in Leipzig

Semic. Sci. Technol. 30(2), 024003:1-10 (2015)
[ | | IF: 2.098 ]

637
S.F. Fischer, M. Grundmann
Semiconductor Functional Oxides
 
Semic. Sci. Technol. 30(2), 020301:1-2 (2015)
[ | link | | extra | IF: 2.098 ]

636
Special issue on semiconductor functional oxides
 
Semic. Sci. Technol. 30(2) (2015), S.F. Fischer, M. Grundmann, eds.
[ | link | extra | IF: 2.098 ]

635
C. Bundesmann, R. Feder, R. Wunderlich, U. Teschner, M. Grundmann, B. Rauschenbach, H. Neumann
Ion beam sputter deposition of Ge films: Influence of process parameters on film properties

Thin Solid Films 589, 487-492 (2015)
[ | | IF: 1.604 ]

634
S. Puttnins, M.S. Hammer, J. Neerken, I.Riedel, F. Daume, A. Rahm, A.Braun, M. Grundmann, T. Unold
Impact of Sodium on the Device Characteristics of Low Temperature-Deposited CIGSe-Solar Cells

Thin Solid Films 582, 85-90 (2015)
[ | | IF: 1.604 ]

633
M. Grundmann
Bipolar oxide devices - Putting pn-heterostructures to work
 
BuildMoNa Annual Report 2015, p. 26-29 (2015)
[ | link ]

632
D. Poppitz, A. Lotnyk, J.W. Gerlach, J. Lenzner, M. Grundmann, B. Rauschenbach
An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE
Micron 73, 1-8 (2015)
[ | ]

631
Report of The Physics Institutes of Universität Leipzig 2014
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

630
M. Grundmann
The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 2nd edition, reprint
 
(Beijing World Publishing Corporation, Beijing, 2014), ISBN 978-7-5100-7781-4

629
M. Grundmann, R. Karsthof, H. von Wenckstern
Interface Recombination Current in Type II Heterostructure Bipolar Diodes

ACS Appl. Mater. Interfaces 6(17), 14785-14789 (2014)
[ | | IF: 7.504 ]

628
T. Jakubczyk, H. Franke, T. Smolenski, M. Sciesiek, W. Pacuski, A. Golnik, R. Schmidt-Grund, M. Grundmann, C. Kruse, D. Hommel, P. Kossackiy
Inhibition and Enhancement of the Spontaneous Emission of Quantum Dots in Micropillar Cavities with Radial Distributed Bragg Reflectors

ACS Nano 8(10), 9970-9978 (2014)
[ | | IF: 13.334 ]

627
C. Tessarek, R. Röder, T. Michalsky, S. Geburt, H. Franke, R. Schmidt-Grund, M. Heilmann, B. Hoffmann, C. Ronning, M. Grundmann, S. Christiansen
Improving the optical properties of self-catalyzed GaN microrods towards whispering gallery mode lasing

ACS Photonics 1(10), 990-997 (2014)
[ | | IF: 5.404 ]

626
T. Michalsky, M. Wille, C.P. Dietrich, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann
Phonon-assisted Lasing in ZnO Microwires at Room Temperature

Appl. Phys. Lett. 105(21), 211106:1-4 (2014)
[ | link | | IF: 3.794 ]

625
R. Schmidt-Grund, H. Krauß, C. Kranert, M. Bonholzer, M. Grundmann
Temperature dependence of the dielectric function in the spectral range (0.5-8.5) eV of an In₂O₃ thin film

Appl. Phys. Lett. 105(11), 111906:1-4 (2014)
[ | | IF: 3.794 ]

624
M. Kneiß, M. Jenderka, K. Brachwitz, M. Lorenz, M. Grundmann
Modeling the electrical transport in epitaxial undoped and Ni-, Cr-, and W-doped TiO₂ anatase thin films

Appl. Phys. Lett. 105(6), 062103:1-5 (2014)
[ | | IF: 3.794 ]

623
M. Stölzel, A. Müller, G. Benndorf, M. Lorenz, M. Grundmann, C. Patzig, T. Höche
Determination of the spontaneous polarization of wurtzite (Mg,Zn)O

Appl. Phys. Lett. 104(19), 192102:1-4 (2014)
[ | | IF: 3.794 ]

622
F.-L. Schein, M. Winter, T. Böntgen, H. von Wenckstern, M. Grundmann
Highly rectifying p-ZnCo₂O₄/n-ZnO heterojunction diodes

Appl. Phys. Lett. 104(2), 022104:1-4 (2014)
[ | | IF: 3.794 ]

621
H. von Wenckstern, D. Splith, F. Schmidt, M. Grundmann, O. Bierwagen, J.S. Speck
Schottky contacts to In₂O₃

APL Mater. 2(4), 046104:1-7 (2014)
[ | | IF: 4.323 ]

620
M. Thunert, A. Janot, H. Franke, C. Sturm, T. Michalsky, M.D. Martín, L. Viña, B. Rosenow, M. Grundmann, R. Schmidt-Grund
Cavity Polariton Condensate in a Disordered Environment

arxiv: 1412.8667:1-12 (2014)
[ | link ]

619
T. Michalsky, M. Wille, C.P. Dietrich, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann
Phonon-Assisted Lasing in ZnO Microwires at Room Temperature

arxiv: 1410.7970 (2014)
[ | link ]

618
M. Jenderka, R. Schmidt-Grund, M. Grundmann, M. Lorenz
Electronic excitations and structure of Li₂IrO₃ thin films grown on ZrO₂:Y (001) substrates

arxiv: 1407.3596 (2014)
[ | link ]

617
Z. Zhang, H. von Wenckstern, M. Grundmann
Monolithic multichannel ultraviolet photodiodes based on (Mg,Zn)O thin films with continuous composition spreads

IEEE J. Sel. Top. Quantum Electr. 20(6), 3801606:1-6 (2014)
[ | | IF: 4.078 ]

616
S. Müller, H. von Wenckstern, F. Schmidt, D. Splith, R. Heinold, M. Allen, M. Grundmann
Method of choice for fabrication of high-quality ZnO-based Schottky diodes

J. Appl. Phys. 116(19), 194506:1-12 (2014)
[ | | IF: 2.21 ]

615
F. Schmidt, S. Müller, H. von Wenckstern, G. Benndorf, R. Pickenhain, M. Grundmann
Impact of strain on defects in (Mg,Zn)O thin films

J. Appl. Phys. 116(10), 103703:1-9 (2014)
[ | | IF: 2.21 ]

614
R. Schmidt-Grund, C. Kranert, T. Böntgen, H. von Wenckstern, H. Krauß, M. Grundmann
Dielectric function in the NIR-VUV spectral range of (In_xGa_1-x)₂O₃ thin films

J. Appl. Phys. 116(5), 053510:1-7 (2014)
[ | | IF: 2.21 ]

613
C. Kranert, J. Lenzner, M. Jenderka, M. Lorenz, H. von Wenckstern, R. Schmidt-Grund, M. Grundmann
Lattice parameters and Raman-active phonon modes of (In_xGa_1-x)₂O₃ for x < 0.4

J. Appl. Phys. 116(1), 013505:1-7 (2014)
[ | | IF: 2.21 ]

612
S. Acharya, S. Chouthe, H. Graener, T. Böntgen, C. Sturm, R. Schmidt-Grund, M. Grundmann, G. Seifert
Ultrafast dynamics of the dielectric functions of ZnO and BaTiO₃ thin films after intense femtosecond laser excitation

J. Appl. Phys. 115(5), 053508:1-9 (2014)
[ | | IF: 2.21 ]

611
R. Böttcher, A. Pöppl, M. Lorenz, S. Friedländer, D. Spemann, M. Grundmann
⁵⁵Mn Pulsed ENDOR Spectroscopy of Mn²⁺ Ions in ZnO Thin Films and Single Crystal

J. Magn. Res. 245, 79-86 (2014)
[ | | IF: 2.3 ]

610
M. Lorenz, R. Böttcher, S. Friedländer, A. Pöppl, D. Spemann, M. Grundmann
Local lattice distortions in oxygen deficient Mn-doped ZnO thin films, probed by electron paramagnetic resonance

J. Mater. Chem. C 2(25), 4947-4956 (2014)
[ | | IF: 7.059 ]

609
M. Lorenz, V. Lazenka, P. Schwinkendorf, F. Bern, M. Ziese, H. Modarresi, A. Volodin, M. van Bael, K. Temst, A. Vantomme, M. Grundmann
Multiferroic BaTiO₃-BiFeO₃ composite thin films and multilayers: Strain engineering and magnetoelectric coupling

J. Phys. D: Appl. Phys. 47(13), 135303:1-10 (2014)
[ | | IF: 2.772 ]

608
M. Lorenz, A. de Pablos-Martin, C. Patzig, M. Stölzel, K. Brachwitz, H. Hochmuth, M. Grundmann, T. Höche
Highly textured fresnoite thin films synthesized by pulsed laser deposition with CO₂ laser direct heating
 
J. Phys. D: Appl. Phys. 47(3), 034013:1-9 (2014)
[ | | extra | IF: 2.772 ]

607
F. Schmidt, P. Schlupp, S. Müller, C.P. Dietrich, H. von Wenckstern, M. Grundmann, R. Heinhold, H.-S. Kim, M.W. Allen
A DLTS study of ZnO microwire, thin film and bulk material

Proc. Mat. Res. Soc. 1633, 51-54 (2014)
[ | ]

606
H. von Wenckstern, Z. Zhang, J. Lenzner, F. Schmidt, M. Grundmann
A continuous composition spread approach towards monolithic, wavelength-selective multichannel UV-photo-detector arrays

Proc. Mat. Res. Soc. 1633, 123-129 (2014)
[ | ]

605
P. Schlupp, H. von Wenckstern, M. Grundmann
Amorphous zinc-tin oxide thin films fabricated by pulsed laser deposition at room temperature

Proc. Mat. Res. Soc. 1633, 101-104 (2014)
[ | ]

604
J.L. Cholula-Díaz, J. Barzola-Quiquia, H. Krautscheid, C. Kranert, T. Michalsky, P. Esquinazi, M. Grundmann
Conducting behavior of chalcopyrite-type CuGaS₂ crystals under visible light

Phys. Chem. Chem. Phys. 16(39), 21860-21866 (2014)
[ | | IF: 4.198 ]

603
D. Splith, S. Müller, F. Schmidt, H. von Wenckstern, J.J. van Rensburg, W.E. Meyer, M. Grundmann
Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga₂O₃ thin films grown by pulsed laser deposition

Phys. Status Solidi A 211(1), 40-47 (2014)
[ | | IF: 1.648 ]

602
S. Müller, H. von Wenckstern, D. Splith, F. Schmidt, M. Grundmann
Control of the conductivity of Si-doped β-Ga₂O₃ thin films via growth temperature and pressure

Phys. Status Solidi A 211(1), 34-39 (2014)
[ | | IF: 1.648 ]

601
M. Bonholzer, M. Lorenz, M. Grundmann
Layer-by-layer growth of TiN by pulsed laser deposition on in-situ annealed (100) MgO substrates

Phys. Status Solidi A 211(11), 2621-2624 (2014)
[ | | IF: 1.648 ]

600
P. Schwinkendorf, M. Lorenz, H. Hochmuth, Z. Zhang, M. Grundmann
Interface charging effects in ferroelectric ZnO-BaTiO₃ field-effect transistor heterostructures

Phys. Status Solidi A 211(1), 166-172 (2014)
[ | | IF: 1.648 ]

599
F. Schmidt, S. Müller, R. Pickenhain, H. von Wenckstern, S. Geburt, C. Ronning, M. Grundmann
Defect studies on Ar-implanted ZnO thin films

Phys. Status Solidi B 251(5), 937-941 (2014)
[ | | IF: 1.522 ]

598
M. Grundmann, M. Scheibe, M. Lorenz, J. Bläsing, A. Krost
X-ray multiple diffraction of ZnO substrates and heteroepitaxial thin films

Phys. Status Solidi B 251(4), 850-863 (2014)
[ | | IF: 1.522 ]

597
C. Kranert, R. Schmidt-Grund, M. Grundmann
Raman active phonon modes of cubic In₂O₃

Phys. Status Solidi RRL 8(6), 554-559 (2014)
[ | | IF: 2.58 ]

596
R. Schmidt-Grund, S. Richter, S.G. Ebbinghaus, M. Lorenz, C. Bundesmann, M. Grundmann
Electronic transitions and dielectric function tensor of a YMnO₃ single crystal in the NIR

RSC Adv. 4(63), 33549-33554 (2014)
[ | | IF: 2.562 ]

595
S. Puttnins, S. Jander, A. Wehrmann, G. Benndorf, M. Stölzel, A. Müller, H. von Wenckstern, F. Daume, A. Rahm, M. Grundmann
Breakdown characteristics of flexible Cu(In,Ga)Se₂ solar cells

Sol. Energy Mat. Sol. Cells 120(Part B), 506-511 (2014)
[ | | IF: 4.63 ]

594
F. Schmidt, H. von Wenckstern, O. Breitenstein, R. Pickenhain, M. Grundmann
Low Rate Deep Level Transient Spectroscopy: A powerful tool for defect characterization in wide bandgap semiconductors

Sol. St. Electr. 92, 40-46 (2014)
[ | | IF: 1.482 ]

593
L. Fricke, T. Böntgen, J. Lorbeer, C. Bundesmann, R. Schmidt-Grund, M. Grundmann
An extended Drude model for the in-situ spectroscopic ellipsometry analysis of ZnO thin layers and surface modifications

Thin Solid Films 571(3), 437-441 (2014)
[ | | IF: 1.604 ]

592
M. Grundmann, F.-L. Schein, R. Karsthof, P. Schlupp, H. von Wenckstern
Several Approaches to Bipolar Oxide Diodes With High Rectification
Adv. Sci. Technol. 93, 252-259 (2014)
[ | ]

591
M. Grundmann
Amorphous semiconductor diodes - A new paradigm
 
BuildMoNa Annual Report 2014, p. 28-31 (2014)
[ | link ]

590
Report of The Physics Institutes of Universität Leipzig 2013
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

589
C.P. Dietrich, M. Grundmann
Pulsed-laser deposition growth of ZnO NWs
 
Wide Band Gap Semiconductor Nanowires: Low-Dimensionality Effects and Growth, Vincent Consonni, Guy Feuillet eds., p. 303-323 (2014) (Wiley-ISTE, 2014), ISBN 978-1-84821-597-9
[ | link | ]

588
M. Lorenz, M. Lange, C. Kranert, C.P. Dietrich, M. Grundmann
Optical properties of and optical devices from ZnO-based nanostructures
 
Zinc Oxide Nanostructures: Advances and Applications, p. 43-99 (2014), M. Willander, ed. (Pan Stanford Publishing, Singapore, 2014), ISBN 9789814411332
[ | link | | extra ]

587
Z. Zhang, H. von Wenckstern, M. Grundmann
Energy-selective multichannel ultraviolet photodiodes based on (Mg,Zn)O

Appl. Phys. Lett. 103(17), 171111:1-4 (2013)
[ | | IF: 3.794 ]

586
F. Schmidt, S. Müller, H. von Wenckstern, C.P. Dietrich, R. Heinhold, M.W. Allen, M. Grundmann
Comparative Study of Deep Defects in ZnO Microwires, Thin Films and Bulk Single Crystals

Appl. Phys. Lett. 103(6), 062102:1-4 (2013)
[ | | IF: 3.794 ]

585
K. Brachwitz, T. Böntgen, M. Lorenz, M. Grundmann
On the transition point of thermally activated conduction of spinel-type MFe₂O₄ ferrite thin films (M=Zn,Co,Ni)

Appl. Phys. Lett. 102(17), 172104:1-4 (2013)
[ | | IF: 3.794 ]

584
F.-L. Schein, H. von Wenckstern, M. Grundmann
Transparent p-CuI/n-ZnO heterojunction diodes

Appl. Phys. Lett. 102(9), 092109:1-4 (2013)
[ | | IF: 3.794 ]

583
M. Jenderka, J. Barzola-Quiquia, Z. Zhang, H. Frenzel, M. Grundmann, M. Lorenz
Mott Variable Range Hopping and Weak Antilocalization Effect in Heteroepitaxial Na₂IrO₃ Thin Films

arxiv: 1303.5245 (2013)
[ | link ]

582
H. von Wenckstern, Z. Zhang, F. Schmidt, J. Lenzner, H. Hochmuth, M. Grundmann
Continuous composition spread using pulsed-laser deposition with a single, segmented target

CrystEngComm 15(46), 10020-10027 (2013)
[ | | IF: 3.879 ]

581
F.J. Klüpfel, F.-L. Schein, M. Lorenz, H. Frenzel, H. von Wenckstern, M. Grundmann
Comparison of ZnO-based JFET, MESFET, and MISFET

IEEE Transact. Electr. Dev. 60(6), 1828-1833 (2013)
[ | | IF: 2.062 ]

580
R. Schmidt-Grund, T. Lühmann, T. Böntgen, H. Franke, D. Opper, M. Lorenz, M. Grundmann
Temperature dependent dielectric function in the NIR-VUV spectral range of alumina and yttria stabilized zirconia thin films

J. Appl. Phys. 114(22), 223509:1-8 (2013)
[ | | IF: 2.21 ]

579
T. Böntgen, K. Brachwitz, R. Schmidt-Grund, M. Lorenz, M. Grundmann
Vacuum ultraviolett dielectric function of ZnFe₂O₄ thin films

J. Appl. Phys. 113(7), 073503:1-4 (2013)
[ | | IF: 2.21 ]

578
A. Lajn, H. von Wenckstern, M. Grundmann, G. Wagner, P. Barquinha, E. Fortunato, R. Martins
Comparative study of transparent rectifying contacts on semiconducting oxide single crystals and amorphous thin films

J. Appl. Phys. 113(4), 044511:1-13 (2013)
[ | | IF: 2.21 ]

577
J. Zippel, M. Lorenz, M. Lange, M. Stölzel, G. Benndorf, M. Grundmann
Growth control of nonpolar and polar ZnO/Mg_xZn_1-xO quantum wells by pulsed-laser deposition

J. Cryst. Growth 364, 81-87 (2013)
[ | | IF: 1.552 ]

576
M. Lange, C.P. Dietrich, M. Lorenz, M. Grundmann
Excitonic and Optical Confinement in Microwire Heterostructures with Non-Polar (Zn,Cd)O/(Mg,Zn)O Multiple Quantum Wells

J. Phys. Chem. C 117(17), 9020-9024 (2013)
[ | | IF: 4.814 ]

575
J. Zippel, M. Lorenz, A. Setzer, M. Rothermel, D. Spemann, P. Esquinazi, M. Grundmann, G. Wagner, R. Denecke, A.A. Timopheev
Defect-induced magnetism in homoepitaxial manganese stabilized zirconia thin films

J. Phys. D: Appl. Phys. 46(27), 275002:1-10 (2013)
[ | | IF: 2.772 ]

574
V.V. Lazenka, M. Lorenz, H. Modarresi, K. Brachwitz, P. Schwinkendorf, T. Böntgen, J. Vanacken, M. Ziese, M. Grundmann, V.V. Moshchalkov
Effect of rare-earth ion doping on multiferroic properties of BiFeO₃ thin films grown epitaxially on SrTiO₃(100)

J. Phys. D: Appl. Phys. 46(17), 175006:1-9 (2013)
[ | | IF: 2.772 ]

573
M. Lorenz, C. Schmidt, G. Benndorf, T. Böntgen, H. Hochmuth, R. Böttcher, A. Pöppl, D. Spemann, M. Grundmann
Degenerate interface layers in epitaxial scandium-doped ZnO thin films

J. Phys. D: Appl. Phys. 46(6), 065311:1-10 (2013)
[ | | IF: 2.772 ]

572
F. Daume, S. Puttnins, C. Scheit, H. Zachmann, A. Rahm, A. Braun, M. Grundmann
Damp heat treatment of Cu(In,Ga)Se₂ solar cells with different sodium content

Materials 6(12), 5478-5489 (2013)
[ | | IF: 2.247 ]

571
M. Lorenz, M. Grundmann, S. Wickert, R. Denecke
Oxidation state of tungsten oxide thin films used as gate dielectric for zinc oxide based transistors

Proc. Mat. Res. Soc. 1494, 1649:1-4 (2013)
[ | ]

570
C. Kranert, R. Schmidt-Grund, M. Grundmann
Surface- and point-defect-related Raman scattering in wurtzite semiconductors excited above the band gap

New J. Phys. 15(11), 113048:1-22 (2013)
[ | | IF: 4.063 ]

569
J. Zippel, M. Lorenz, G. Wagner, J. Lenzner, M. Grundmann
Martensitic phase transition and subsequent surface corrugation in manganese stabilized zirconia thin films

Phil. Mag. 93(18), 2329-2339 (2013)
[ | | IF: 1.596 ]

568
M. Stölzel, A. Müller, G. Benndorf, M. Brandt, M. Lorenz, M. Grundmann
Determination of unscreened exciton states in polar ZnO/(Mg,Zn)O quantum wells with strong quantum-confined Stark effect

Phys. Rev. B 88(4), 045315:1-6 (2013)
[ | | IF: 3.767 ]

567
M. Jenderka, J. Barzola-Quiquia, Z. Zhang, H. Frenzel, M. Grundmann, M. Lorenz
Mott variable range hopping and weak antilocalization effect in heteroepitaxial Na₂IrO₃ thin films

Phys. Rev. B 88(4), 045111:1-6 (2013)
[ | link | | IF: 3.767 ]

566
A. Müller, M. Grundmann
Tunneling dynamics of excitons in random semiconductor alloys

Phys. Rev. B 87(3), 035134:1-5 (2013)
[ | | IF: 3.767 ]

565
M. Grundmann, F.-L. Schein, M. Lorenz, T. Böntgen, J. Lenzner, H. von Wenckstern
Cuprous Iodide - a p-type transparent semiconductor: history and novel applications
 
Phys. Status Solidi A 210(9), 1671-1703 (2013)
[ | | extra | IF: 1.648 ]

564
H. Frenzel, A. Lajn, M. Grundmann
One decade of fully transparent oxide thin film transistors: fabrication, performance and stability
 
Phys. Status Solidi RRL 7(9), 605-615 (2013)
[ | | extra | IF: 2.58 ]

563
S. Puttnins, S. Levcenco, K. Schwarzburg, G. Benndorf, F. Daume, A. Rahm, A. Braun, M. Grundmann, T. Unold
Effect of Sodium on Material and Device Quality in Low Temperature Deposited Cu(In,Ga)Se₂

Sol. Energy Mat. Sol. Cells 119, 281-286 (2013)
[ | | IF: 4.63 ]

562
A.A. Timopheev, A.M. Azevedo, N.A. Sobolev, K. Brachwitz, M. Lorenz, M. Ziese, P. Esquinazi, M. Grundmann
Magnetic anisotropy of epitaxial zinc ferrite thin films grown by pulsed laser deposition

Thin Solid Films 527, 273-277 (2013)
[ | | IF: 1.604 ]

561
M. Grundmann
Transparent semiconductors - from materials growth to devices
 
BuildMoNa Annual Report 2013, p. 29-33 (2013)
[ | link ]

560
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern
TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE
CA 2765981 C (Canadian Intellectual Property Office, 2013)
[ | link ]

559
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern
Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu ihrer Herstellung und Verwendung
 
EP 2 446 484 B1 (European Patent Office, Munich, 2013)
[ | link ]

558
M. Lorenz, M. Ziese, G. Wagner, P. Esquinazi, M. Grundmann
Exchange bias and magnetoelectric coupling effects in ZnFe₂O₄-BaTiO₃ composite thin films
 
Ext. Abstracts of the Nature Conference "Frontiers in Electronic Materials", Aachen, Germany (Nanosession: Multiferroic Thin Films and Heterostructures), J. Heber, D. Schlomm, Y. Tokura, R. Waser, M. Wuttig, eds., p. 334 (1 page) (2013)
[ | | extra ]

557
S. Puttnins, H. Kempa, S. Englisch, R. Karsthof, F. Daume, A. Rahm, A. Braun, M. Grundmann
Voltage Dependent Photocurrent in Low-Temperature Deposited CIGSe Solar Cells
Proc. 28th European Photovoltaic Solar Energy Conference and Exhibition, p. 2438-2442 (2013)
[ | ]

556
F. Daume, A. Rahm, A. Braun, M. Grundmann
Sodium in the Degradation Process of Cu(In,Ga)Se₂ Solar Cells
Proc. 28th European Photovoltaic Solar Energy Conference and Exhibition, p. 2192-2198 (2013)
[ | ]

555
Report of The Physics Institutes of Universität Leipzig 2012
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

554
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern
TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE
US 8,445,904 B2 (United States Patent, 2013)
[ | link ]

553
M. Lorenz, A. Reinhardt, H. von Wenckstern, M. Grundmann
Design rules of (Mg,Zn)O-based thin-film transistors with high-κ WO₃ dielectric gates

Appl. Phys. Lett. 101(18), 183502:1-4 (2012)
[ | | IF: 3.794 ]

552
C.P. Dietrich, M. Lange, T. Böntgen, M. Grundmann
The corner effect in hexagonal whispering gallery microresonators

Appl. Phys. Lett. 101(14), 141116:1-5 (2012)
[ | | IF: 3.794 ]

551
R. Heinhold, H.-S. Kim, F. Schmidt, H. von Wenckstern, M. Grundmann, R.J. Mendelsberg, R.J. Reeves, S.M. Durbin, M.W. Allen
Optical and defect properties of hydrothermal ZnO with low lithium contamination

Appl. Phys. Lett. 101(6), 062105:1-4 (2012)
[ | | IF: 3.794 ]

550
F. Schmidt, H. von Wenckstern, D. Spemann, M. Grundmann
On the radiation hardness of (Mg,Zn)O PLD thin films

Appl. Phys. Lett. 101(1), 012103:1-4 (2012)
[ | | IF: 3.794 ]

549
C.P. Dietrich, M. Lange, M. Stölzel, M. Grundmann
Microwire (Mg,Zn)O/ZnO and (Mg,Zn)O/(Cd,Zn)O non-polar quantum well heterostructures for cavity applications

Appl. Phys. Lett. 100(3), 031110:1-4 (2012)
[ | | IF: 3.794 ]

548
M. Lorenz, M. Ziese, G. Wagner, J. Lenzner, C. Kranert, K. Brachwitz, H. Hochmuth, P. Esquinazi, M. Grundmann
Exchange bias and magnetoelectric coupling effects in ZnFe₂O₄-BaTiO₃ composite thin films

CrystEngComm 14(20), 6477-6486 (2012)
[ | link | | IF: 3.879 ]

547
S. Müller, H. von Wenckstern, O. Breitenstein, J. Lenzner, M. Grundmann
Microscopic identification of hot spots in multi-barrier Schottky contacts on pulsed laser deposition grown zinc oxide thin films

IEEE Transact. Electr. Dev. 59(3), 536-541 (2012)
[ | | IF: 2.062 ]

546
F.-L. Schein, H. von Wenckstern, H. Frenzel, M. Grundmann
ZnO-based n-channel junction field-effect transistor with room-temperature fabricated p-type ZnCo₂O₄-gate

IEEE Electron Device Letters 33(5), 676-678 (2012)
[ | | IF: 2.789 ]

545
M. Lange, C.P. Dietrich, K. Brachwitz, T. Böntgen, M. Lorenz, M. Grundmann
(Zn,Cd)O thin films for the application in heterostructures: structural and optical properties

J. Appl. Phys. 112(10), 103517:1-6 (2012)
[ | | IF: 2.21 ]

544
M. Stölzel, J. Kupper, M. Brandt, A. Müller, G. Benndorf, M. Lorenz, M. Grundmann
Electronic and optical properties of ZnO/(Mg,Zn)O quantum wells with and without a distinct QCSE

J. Appl. Phys. 111(6), 063701:1-10 (2012)
[ | | IF: 2.21 ]

543
M. Noltemeyer, F. Bertram, Th. Hempel, B. Bastek, A. Polyakov, J. Christen, M. Brandt, M. Lorenz, M. Grundmann
Excitonic Transport in ZnO

J. Mat. Res. 27(17), 2225-2231 (2012)
[ | | IF: 1.713 ]

542
S. Durbin, T. Veal, M. Grundmann, J. Phillips
Focus Issue on Oxide Semiconductors, Introduction
 
J. Mat. Res. 27(17), 2179 (1 page) (2012) (Materials Research Society, Warrendale, PA, 2012)
[ | | extra | IF: 1.713 ]

541
Focus Issue on Oxide Semiconductors
 
J. Mat. Res. 27(17) (2012), Steve Durbin, Tim Veal, Marius Grundmann, Jamie Phillips, eds. (Materials Research Society, Warrendale, PA, 2012)
[ | extra | IF: 1.713 ]

540
H. Franke, C. Sturm, R. Schmidt-Grund, G. Wagner, M. Grundmann
Ballistic propagation of exciton-polariton condensates in a ZnO-based microcavity

New J. Phys. 14(1), 013037:1-12 (2012)
[ | | IF: 4.063 ]

539
M. Lange, J. Kupper, C.P. Dietrich, M. Brandt, M. Stölzel, G. Benndorf, M. Lorenz, M. Grundmann
Exciton localization and phonon sidebands in polar ZnO/MgZnO quantum wells

Phys. Rev. B 86(4), 045318:1-7 (2012)
[ | | IF: 3.767 ]

538
M. Grundmann, C.P. Dietrich
Whispering gallery modes in deformed hexagonal resonators
 
Phys. Status Solidi B 249(5), 871-879 (2012)
[ | | extra | IF: 1.522 ]

537
M. Brandt, M. Bonholzer, M. Stölzel, G. Benndorf, D. Spemann, M. Lorenz, M. Grundmann
Electrical transport in strained Mg_xZn_1-xO:P thin films grown by pulsed laser deposition on ZnO (000-1)

Phys. Status Solidi B 249(1), 82-90 (2012)
[ | | IF: 1.522 ]

536
M. Schmidt, M. Ellguth, R. Karsthof, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, F.C.C. Ling
On the T2 trap in zinc oxide thin films

Phys. Status Solidi B 249(3), 588-595 (2012)
[ | | IF: 1.522 ]

535
J. Zippel, M. Lorenz, G. Benndorf, M. Grundmann
Persistent layer-by-layer growth for pulsed-laser homoepitaxy of (000-1) ZnO

Phys. Status Solidi RRL 6(11), 433-435 (2012)
[ | | IF: 2.58 ]

534
M. Lange, C.P. Dietrich, K. Brachwitz, M. Stölzel, M. Lorenz, M. Grundmann
Visible emission from ZnCdO/ZnO multiple quantum wells

Phys. Status Solidi RRL 6(1), 31-33 (2012)
[ | | IF: 2.58 ]

533
M. Noltemeyer, F. Bertram, T. Hempel, B. Bastek, J. Christen, M. Brandt, M. Lorenz, M. Grundmann
Excitonic transport in ZnO

Proc. SPIE 8263, 82630X:1-7 (2012)
[ | ]

532
M. Schmidt, H. von Wenckstern, R. Pickenhain, M. Grundmann
On the investigation of electronic defect states in ZnO thin films by space charge spectroscopy with optical excitation

Sol. St. Electr. 75, 48-54 (2012)
[ | | IF: 1.482 ]

531
J.P. Richters, J. Kalden, M. Gnauck, C. Ronning, C.P. Dietrich, H. von Wenckstern, M. Grundmann, J. Gutowski, T. Voss
Modal gain and its diameter dependence in single ZnO micro- and nanowires

Semic. Sci. Technol. 27(1), 015005:1-5 (2012)
[ | | IF: 2.098 ]

530
M. Grundmann
Quantum optics and round corners in Leipzig
 
BuildMoNa Annual Report 2012, p. 33-37 (2012)
[ | link ]

529
H. von Wenckstern, R. Schmidt-Grund, C. Bundesmann, A. Müller, C.P. Dietrich, M. Stölzel, M. Lange, M. Grundmann
The (Mg,Zn)O Alloy
 
Handbook of Zinc Oxide and Related Materials, Vol. 1 Materials, p. 257-320 (2012), Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855706
[ | link | | extra ]

528
H. Frenzel, M. Lorenz, F.-L. Schein, A. Lajn, F.J. Klüpfel, T. Diez, H. von Wenckstern, M. Grundmann
Metal-semiconductor field-effect transistors and integrated circuits based on ZnO and related oxides
 
Handbook of Zinc Oxide and Related Materials, Vol. 2 Devices and Nano-Engineering, p. 369-434 (2012), Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855744
[ | link | | extra ]

527
S. Puttnins, M. Purfürst, M. Hartung, H.-K. Lee, F. Daume, L. Hartmann, A. Rahm, A. Braun, M. Grundmann
The Influence of Sodium on CIGSe Solar Cell Breakdown Characteristics
Proc. 27th European Photovoltaic Solar Energy Conference and Exhibition, p. 2219-2221 (2012)
[ | ]

526
Report of The Physics Institutes of Universität Leipzig 2011
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

525
M. Lorenz, H. von Wenckstern, M. Grundmann
Tungsten oxide as gate dielectric for highly transparent and temperature-stable zincoxide-based thin-film transistors

Adv. Mater. 23(45), 5383-5386 (2011)
[ | | IF: 18.96 ]

524
C. Kranert, T. Böntgen, R. Schmidt‐Grund, M. Brandt, S. Schöche, C. Sturm, H. Hochmuth, M. Lorenz, M. Grundmann
Structural properties of BaTiO₃/ZnO heterostructures and interfaces

AIP Conf. Proc. 1399, 451-452 (2011) (AIP Publishing LLC, New York)
[ | ]

523
C. Sturm, H. Hilmer, R. Schmidt‐Grund, M. Grundmann
Occupation behaviour of the lower exciton-polariton branch in ZnO-based microresonators

AIP Conf. Proc. 1399, 447-448 (2011) (AIP Publishing LLC, New York)
[ | ]

522
C.P. Dietrich, M. Grundmann
Comment on "Exciton-polariton microphotoluminescence and lasing from ZnO whispering-gallery mode microcavities" [Appl. Phys. Lett. 98, 161110 (2011)]

Appl. Phys. Lett. 99(13), 136101 (1 page) (2011)
[ | link | | extra | IF: 3.794 ]

521
Zh. Zhang, H. von Wenckstern, M. Schmidt, M. Grundmann
Wavelength selective metal-semiconductor-metal photodetectors based on (Mg,Zn)O-heterostructures

Appl. Phys. Lett. 99(8), 083502:1-3 (2011)
[ | | IF: 3.794 ]

520
C.P. Dietrich, M. Lange, F.J. Klüpfel, H. von Wenckstern, R. Schmidt-Grund, M. Grundmann
Strain distribution in bent ZnO microwires

Appl. Phys. Lett. 98(3), 031105:1-3 (2011)
[ | link | | IF: 3.794 ]

519
M. Bachmann, K. Goede, A.G. Beck-Sickinger, M. Grundmann, A. Irbäck, W. Janke
Microscopic Mechanism of Specific Peptide Adhesion to Semiconductor Substrates

arxiv: 1107.1208 (2011)
[ | link ]

518
A. Müller, M. Lorenz, K. Brachwitz, J. Lenzner, K. Mittwoch, W. Skorupa, M. Grundmann, T. Höche
Fresnoite Thin Films grown by Pulsed Laser Deposition: Photoluminescence and Laser Crystallization
 
CrystEngComm 13(21), 6377-6385 (2011)
[ | | extra | IF: 3.879 ]

517
A. Lajn, T. Diez, F. Schein, H. Frenzel, H. von Wenckstern, M. Grundmann
Light and temperature stability of fully transparent ZnO-based inverter circuits

IEEE Electron Device Letters 32(4), 515-517 (2011)
[ | | IF: 2.789 ]

516
J. Zippel, M. Lorenz, J. Lenzner, M. Grundmann, T. Hammer, A. Jacquot, H. Böttner
Electrical transport and optical emission of Mn_xZr_1-xO₂ (0<x<0.5) thin films

J. Appl. Phys. 110(4), 043706:1-6 (2011)
[ | | IF: 2.21 ]

515
C.C. Dey, S. Dey, S.C. Bedi, S.K. Das, M. Lorenz, M. Grundmann, J. Vogt, T. Butz
Hafnium Oxide Thin Films Studied by Time Differential Perturbed Angular Correlations

J. Appl. Phys. 109(11), 113918:1-6 (2011)
[ | | IF: 2.21 ]

514
F.J. Klüpfel, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann
Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors

J. Appl. Phys. 109(7), 074515:1-4 (2011)
[ | | IF: 2.21 ]

513
C.P. Dietrich, M. Brandt, M. Lange, J. Kupper, T. Böntgen, H. von Wenckstern, M. Grundmann
Defect properties of ZnO and ZnO:P microwires

J. Appl. Phys. 109(1), 013712:1-5 (2011)
[ | | IF: 2.21 ]

512
M. Lange, C.P. Dietrich, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, M. Grundmann
Thermal stability of ZnO/ZnCdO/ZnO double heterostructures grown by pulsed laser deposition

J. Cryst. Growth 328(1), 13-17 (2011)
[ | | IF: 1.552 ]

511
A. Lajn, M. Schmidt, H. von Wenckstern, M. Grundmann
Erratum: Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO

J. Electr. Mat. 40(4), 477 (1 page) (2011)
[ | | IF: 1.635 ]

510
A. Lajn, M. Schmidt, H. von Wenckstern, M. Grundmann
Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO

J. Electr. Mat. 40, 473-476 (2011)
[ | | IF: 1.635 ]

509
M. Lange, C.P. Dietrich, J. Zúñiga-Pérez, H. von Wenckstern, M. Lorenz, M. Grundmann
MgZnO/ZnO quantum well nanowire heterostructures with large confinement energies

J. Vac. Sci. Technol. A 29(3), 03A104:1-5 (2011)
[ | | IF: 1.432 ]

508
C.P. Dietrich, M. Lange, C. Sturm, R. Schmidt-Grund, M. Grundmann
One- and two-dimensional cavity modes in ZnO microwires

New J. Phys. 13(10), 103021:1-9 (2011)
[ | | IF: 4.063 ]

507
C. Sturm, H. Hilmer, R. Schmidt-Grund, M. Grundmann
Exciton-polaritons in a ZnO-based microcavity: polarization dependence and non-linear occupation

New J. Phys. 13(3), 033014:1-17 (2011)
[ | | IF: 4.063 ]

506
C. Sturm, H. Hilmer, B. Rheinländer, R. Schmidt-Grund, M. Grundmann
Cavity-photon dispersion in one-dimensional confined microresonators with an optically anisotropic cavity material

Phys. Rev. B 83(20), 205301:1-12 (2011)
[ | | IF: 3.767 ]

505
M. Ellguth, M. Schmidt, R. Pickenhain, M. Grundmann
Characterization of point defects in ZnO thin films by Optical Deep Level Transient Spectroscopy

Phys. Status Solidi B 248(4), 941-949 (2011)
[ | | IF: 1.522 ]

504
M. Grundmann
Formation of Epitaxial Domains: Unified Theory and Survey of Experimental Results
 
Phys. Status Solidi B 248(4), 805-824 (2011) [Editor's Choice]
[ | link | | extra | IF: 1.522 ]

503
M. Schmidt, K. Brachwitz, F. Schmidt, M. Ellguth, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa
Nickel-related defects in ZnO - A deep-level transient spectroscopy and photo-capacitance study

Phys. Status Solidi B 248(8), 1949-1955 (2011)
[ | | IF: 1.522 ]

502
M. Lorenz, M. Brandt, K. Mexner, K. Brachwitz, M. Ziese, P. Esquinazi, H. Hochmuth, M. Grundmann
Ferrimagnetic ZnFe₂O₄ thin films on SrTiO₃ single crystals with highly tunable electrical conductivity

Phys. Status Solidi RRL 5(12), 438-440 (2011)
[ | | IF: 2.58 ]

501
M. Brandt, H. von Wenckstern, M. Stölzel, H. Hochmuth, M. Lorenz, M. Grundmann
Semiconducting oxide heterostructures

Semic. Sci. Technol. 26(1), 014040:1-9 (2011)
[ | | IF: 2.098 ]

500
T. Böntgen, S. Schöche, R. Schmidt-Grund, C. Sturm, M. Brandt, H. Hochmuth, M. Lorenz, M. Grundmann
Optical properties of BaTiO₃/ZnO heterostructures under the effect of an applied bias

Thin Solid Films 519(9), 2933-2935 (2011)
[ | | IF: 1.604 ]

499
R. Schmidt-Grund, P. Kühne, C. Czekalla, D. Schumacher, C. Sturm, M. Grundmann
Determination of the refractive index of single crystal bulk samples and micro-structures

Thin Solid Films 519(9), 2777-2781 (2011)
[ | | IF: 1.604 ]

498
T. Höche, M. Lorenz, A. Müller, M. Grundmann, K. Mittwoch
Laser patterning of thin films for luminescence applications
18th European Microelectronics and Packaging Conference (EMPC), p. 1-5 (2011), ISBN 978-1-4673-0694-2
[ | link ]

497
M. Grundmann
Oxide-based novel electronic and photonic building blocks
 
BuildMoNa Annual Report 2011, p. 36-39 (2011)
[ | link ]

496
H. Frenzel, A. Lajn, H. von Wenckstern, M. Grundmann
Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu seiner Herstellung und Verwendung
 
DE 10 2009 030 045 B3 (Deutsches Patent- und Markenamt, München, 2011)
[ | link ]

495
M. Lorenz, H. Hochmuth, C. Grüner, H. Hilmer, A. Lajn, D. Spemann, M. Brandt, J. Zippel, R. Schmidt-Grund, H. von Wenckstern, M. Grundmann
Oxide thin film heterostructures on large area, with flexible doping, low dislocation density and abrupt interfaces - grown by Pulsed Laser Deposition
 
Laser Chemistry 2011, 140976:1-27 (2011) (Hindawi, New York, 2011)
[ | ]

494
F. Daume, C. Scheit, S. Puttnins, A. Rahm, M. Grundmann
Application of Series Resistance Imaging Techniques To Cu(In,Ga)Se₂ Solar Cells
Proc. 26th European Photovoltaic Solar Energy Conference and Exhibition, p. 2955-2957 (2011)
[ | ]

493
S. Puttnins, S. Jander, K. Pelz, S. Heinker, F. Daume, A. Rahm, A. Braun, M. Grundmann
The Influence of Front Contact and Buffer Layer Properties on CIGSe Solar Cell Breakdown Characteristics
Prof. 26th European Photovoltaic Solar Energy Conference and Exhibition, p. 2432-2434 (2011)
[ | ]

492
Report of The Physics Institutes of Universität Leipzig 2010
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

491
M. Grundmann
The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 2nd edition
 
(Springer, Heidelberg, 2010), ISBN 978-3-642-13883-6
[ | link | | extra ]

490
M. Grundmann
Nanooptik
(euroforum fachwissen/IIR, 2010)
[ | link ]

489
M. Bachmann, K. Goede, A.G. Beck-Sickinger, M. Grundmann, A. Irbäck, W. Janke
Mikroskopischer Mechanismus der spezifischen Adhäsion von Peptiden an Halbleitersubstraten

Angew. Chemie 122(49), 9721-9724 (2010)
[ | | extra ]

488
M. Bachmann, K. Goede, A.G. Beck-Sickinger, M. Grundmann, A. Irbäck, W. Janke
Microscopic Mechanism of Specific Peptide Adhesion to Semiconductor Substrates

Angew. Chemie Int. Ed. 49(49), 9530-9533 (2010)
[ | | extra | IF: 13.734 ]

487
H. Frenzel, A. Lajn, H. von Wenckstern, M. Lorenz, F. Schein, Zh. Zhang, M. Grundmann
Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and their Application in Transparent Integrated Circuits
 
Adv. Mater. 22(47), 5332-5349 (2010)
[ | | extra | IF: 18.96 ]

486
M. Lorenz, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann, P. Barquinha, R. Martins, E. Fortunato
Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films

Appl. Phys. Lett. 97(24), 243506:1-3 (2010)
[ | | IF: 3.794 ]

485
D. Lausch, K. Petter, R. Bakowskie, C. Czekalla, J. Lenzner, H. von Wenckstern, M. Grundmann
Identification of Pre-Breakdown Mechanism of Silicon Solar Cells at Low Reverse Voltages

Appl. Phys. Lett. 97(7), 073506:1-3 (2010)
[ | | IF: 3.794 ]

484
M. Brandt, M. Lange, M. Stölzel, A. Müller, G. Benndorf, J. Zippel, J. Lenzner, M. Lorenz, M. Grundmann
Control of interface abruptness of polar MgZnO/ZnO quantum wells grown by pulsed laser deposition

Appl. Phys. Lett. 97(5), 052101:1-3 (2010)
[ | | IF: 3.794 ]

483
H. Frenzel, F. Schein, A. Lajn, H. von Wenckstern, M. Grundmann
High-gain integrated inverters based on ZnO MESFET technology

Appl. Phys. Lett. 96(11), 113502:1-3 (2010)
[ | | IF: 3.794 ]

482
H. Frenzel, A. Lajn, H. von Wenckstern, M. Grundmann
Ultrathin gate-contacts for MESFET devices: An alternative approach in transparent electronics

J. Appl. Phys. 107(11), 114515:1-6 (2010)
[ | | IF: 2.21 ]

481
A.O. Ankiewicz, J.S. Martins, M.C. Carmo, M. Grundmann, S. Zhou, H. Schmidt, N.A. Sobolev
Ferromagnetic resonance on metal nanocrystals in Fe and Ni implanted ZnO

J. Appl. Phys. 107(9), 09B518:1-3 (2010)
[ | | IF: 2.21 ]

480
M. Lange, C. Dietrich, C. Czekalla, J. Zippel, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, M. Grundmann
Luminescence Properties of ZnO/Zn_1-xCd_xO/ZnO double heterostructures

J. Appl. Phys. 107(9), 093530:1-8 (2010)
[ | | IF: 2.21 ]

479
A. Müller, M. Stölzel, G. Benndorf, M. Lorenz, M. Grundmann
Origin of the near-band-edge luminescence in Mg_xZn_1-xO

J. Appl. Phys. 107(1), 013704:1-6 (2010)
[ | | IF: 2.21 ]

478
S. Lautenschlaeger, S. Eisermann, M.N. Hofmann, U. Roemer, M. Pinnisch, A. Laufer, B.K. Meyer, H. von Wenckstern, A. Lajn, F. Schmidt, M. Grundmann, J. Blaesing, A. Krost
Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers

J. Cryst. Growth 312(14), 2078-2082 (2010)
[ | | IF: 1.552 ]

477
A. Lajn, H. von Wenckstern, G. Benndorf, C.P. Dietrich, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films

J. Electr. Mat. 39, 595-600 (2010)
[ | | IF: 1.635 ]

476
H. von Wenckstern, K. Brachwitz, M. Schmidt, C.P. Dietrich, M. Ellguth, M. Stölzel, M. Lorenz, M. Grundmann
The E3 defect in Mg_xZn_1-xO

J. Electr. Mat. 39, 584-588 (2010)
[ | | IF: 1.635 ]

475
J. Chai, R.J. Mendelsberg, R.J. Reeves, J. Kennedy, H. von Wenckstern, M. Grundmann, K. Doyle, T.H. Meyers, S.M. Durbin
Identification of a deep acceptor level in ZnO due to silver doping

J. Electr. Mat. 39, 577-583 (2010)
[ | | IF: 1.635 ]

474
H. von Wenckstern, S. Müller, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Dielectric passivation of ZnO-based Schottky diodes

J. Electr. Mat. 39, 559-562 (2010)
[ | | IF: 1.635 ]

473
Q.Y. Xu, S.Q. Zhou, D. Bürger, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
Electrical control of magnetoresistance in highly insulating Co-doped ZnO

Jpn. J. Appl. Phys. 49(4R), 043002:1-4 (2010)
[ | | IF: 1.067 ]

472
J. Zippel, S. Heitsch, M. Stölzel, A. Müller, H. von Wenckstern, G. Benndorf, M. Lorenz, H. Hochmuth, M. Grundmann
Optical properties of homo- and heteroepitaxial ZnO/Mg_xZn_1-xO quantum wells grown by pulsed laser deposition

J. Lumin. 130(3), 520-526 (2010)
[ | | IF: 2.144 ]

471
S. Acharya, S. Chuothe, C. Sturm, H. Graener, R. Schmidt-Grund, M. Grundmann, G. Seifert
Charge carrier dynamics of ZnO and ZnO-BaTiO₃ thin films
J. Phys. Conf. Ser. 210, 012048:1-4 (2010)
[ | ]

470
C. Sturm, H. Hilmer, R. Schmidt-Grund, M. Grundmann
Polarization behavior of the exciton-polariton emission of ZnO-based microresonators

Proc. Mat. Res. Soc. 1208E, 1208-O18-08:1-6 (2010)
[ | ]

469
H. von Wenckstern, Z.P. Zhang, M. Lorenz, C. Czekalla, H. Frenzel, A. Lajn, M. Grundmann
Light beam induced current measurements on ZnO Schottky diodes and MESFETs

Proc. Mat. Res. Soc. 1201, 1201-H04-02:1-6 (2010)
[ | ]

468
C.P. Dietrich, A. Müller, M. Stölzel, M. Lange, G. Benndorf, H. von Wenckstern, M. Grundmann
Bound-exciton recombination in Mg_xZn_1-xO thin films

Proc. Mat. Res. Soc. 1201, 1201-H03-08:1-6 (2010)
[ | ]

467
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern, F. Schein, M. Lorenz
ZnO-based MESFET Devices

Proc. Mat. Res. Soc. 1201, 1201-H01-01:1-5 (2010)
[ | ]

466
C.P. Dietrich, M. Lange, G. Benndorf, J. Lenzner, M. Lorenz, M. Grundmann
Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys

New J. Phys. 12(3), 033030:1-10 (2010)
[ | | IF: 4.063 ]

465
M. Mäder, S. Perlt, T. Höche, H. Hilmer, M. Grundmann, B. Rauschenbach
Gold nanostructure matrices by diffraction mask-projection laser ablation: extension to previously inaccessible substrates

Nanotechnology 21(17), 175304:1-5 (2010)
[ | | IF: 3.842 ]

464
J. Zippel, M. Lorenz, A. Setzer, G. Wagner, N. Sobolev, P. Esquinazi, M. Grundmann
Defect induced ferromagnetism in undoped and Mn-doped zirconia thin films

Phys. Rev. B 82(12), 125209:1-5 (2010)
[ | | IF: 3.767 ]

463
V.M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, H. Schmidt, N. Ianno, M. Schubert
Interface polarization coupling in piezoelectric-semiconductor ferroelectric heterostructures

Phys. Rev. B 81(19), 195307:1-12 (2010)
[ | | IF: 3.767 ]

462
M. Brandt, H. von Wenckstern, G. Benndorf, M. Lange, C.P. Dietrich, C. Kranert, C. Sturm, R. Schmidt-Grund, H. Hochmuth, M. Lorenz, M. Grundmann, M.R. Wagner, M. Alic, C. Nenstiel, A. Hoffmann
Identification of a donor-related recombination channel in ZnO thin films

Phys. Rev. B 81(7), 073306:1-4 (2010)
[ | | IF: 3.767 ]

461
M. Grundmann, T. Böntgen, M. Lorenz
The Occurrence of Rotation Domains in Heteroepitaxy

Phys. Rev. Lett. 105(14), 146102:1-4 (2010)
[ | | IF: 7.645 ]

460
W. Anwand, G. Brauer, T.E. Cowan, V. Heera, H. Schmidt, W. Skorupa, H. von Wenckstern, G. Benndorf, M. Grundmann
Structural characterization of H plasma-doped ZnO single crystals by Hall measurements and photoluminescence studies

Phys. Status Solidi A 207(11), 2426-2431 (2010)
[ | | IF: 1.648 ]

459
M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, H. von Wenckstern
Transparent Semiconducting Oxides: Materials and Devices
 
Phys. Status Solidi A 207(6), 1437-1449 (2010)
[ | link | | extra | IF: 1.648 ]

458
J. Zippel, M. Stölzel, A. Müller, G. Benndorf, M. Lorenz, H. Hochmuth, M. Grundmann
Electronic coupling in ZnO/Mg_xZn_1-xO double quantum wells grown by pulsed laser deposition

Phys. Status Solidi B 247(2), 398-404 (2010)
[ | | IF: 1.522 ]

457
O. Albrecht, R. Zierold, C. Patzig, J. Bachmann, C. Sturm, B. Rheinländer, M. Grundmann, D. Görlitz, B. Rauschenbach, K. Nielsch
Magnetic tubular nanostructures based on glancing-angle deposited templates and atomic layer deposition

Phys. Status Solidi B 247(6), 1365-1371 (2010)
[ | | IF: 1.522 ]

456
R. Schmidt-Grund, H. Hilmer, A. Hinkel, C. Sturm, B. Rheinländer, V. Gottschalch, M. Lange, J. Zúñiga-Pérez, M. Grundmann
Two-dimensional confined photonic wire resonators - strong light-matter coupling

Phys. Status Solidi B 247(6), 1351-1364 (2010)
[ | | IF: 1.522 ]

455
R. Kaden, G. Wagner, C. Strum, R. Schmidt-Grund, H. von Wenckstern, A. Prager, K. Bente, M. Grundmann
Synthesis and physical properties of cylindrite micro tubes and lamellae

Phys. Status Solidi B 247(6), 1335-1350 (2010)
[ | | IF: 1.522 ]

454
C. Czekalla, T. Nobis, A. Rahm, B. Cao, J. Zúñiga-Pérez, C. Sturm, R. Schmidt-Grund, M. Lorenz, M. Grundmann
Whispering gallery modes in ZnO nano- and microwires

Phys. Status Solidi B 247(6), 1282-1293 (2010)
[ | | IF: 1.522 ]

453
M. Lorenz, A. Rahm, B. Cao, J. Zúñiga-Pérez, E.M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, M. Grundmann
Self-organized growth of ZnO-based nano- and microstructures

Phys. Status Solidi B 247(6), 1265-1281 (2010)
[ | | IF: 1.522 ]

452
M. Grundmann
Architecture of nano- and microdimensional building blocks

Phys. Status Solidi B 247(6), 1257-1264 (2010)
[ | | IF: 1.522 ]

451
Scientific report of the Forschergruppe 522
 
Phys. Status Solidi B 247(6), 1257-1392 (2010), M. Grundmann, ed.
[ | extra | IF: 1.522 ]

450
M. Schmidt, M. Ellguth, F. Schmidt, Th. Lüder, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa
Defects in a nitrogen-implanted ZnO thin film

Phys. Status Solidi B 247(5), 1220-1226 (2010)
[ | | IF: 1.522 ]

449
C. Scarlat, K.M. Mok, S. Zhou, M. Vinnichenko, M. Lorenz, M. Grundmann, M. Helm, M. Schubert, H. Schmidt
Voigt effect measurement on PLD grown NiO thin films

Phys. Status Solidi C 7(2), 334-337 (2010)
[ | ]

448
G. Zimmermann, M. Lange, B. Cao, M. Lorenz, M. Grundmann
Resistivity control of ZnO nanowires by Al-doping

Phys. Status Solidi RRL 4(3-4), 82-84 (2010)
[ | | IF: 2.58 ]

447
H. Hilmer, C. Sturm, R. Schmidt-Grund, B. Rheinländer, M. Grundmann
Observation of strong light-matter coupling by spectroscopic ellipsometry

Superlatt. Microstr. 47(1), 19-23 (2010)
[ | | IF: 1.564 ]

446
C.P. Dietrich, M. Lange, G. Benndorf, H. von Wenckstern, M. Grundmann
Donor-acceptor pair recombination in non-stoichiometric ZnO thin films

Sol. St. Comm. 150(7-8), 379-382 (2010)
[ | | IF: 1.534 ]

445
M. Lorenz, M. Brandt, M. Lange, G. Benndorf, H. von Wenckstern, D. Klimm, M. Grundmann
Homoepitaxial Mg_xZn_1-xO (0 ≤ x ≤ 0.22) thin films grown by pulsed laser deposition

Thin Solid Films 518(16), 4623-4629 (2010)
[ | | IF: 1.604 ]

444
M. Grundmann
ZnO-based alloys for nano-scale optoelectronic devices
 
BuildMoNa Annual Report 2010, p. 34-39 (2010)
[ | link ]

443
B. Cao, J. Zúñiga-Pérez, C. Czekalla, H. Hilmer, J. Lenzner, N. Boukos, A. Travlos, M. Lorenz, M. Grundmann
Tuning the lateral density of ZnO nanowire arrays and its application as physical templates for radial nanowire heterostructures
J. Mat. Chem. 20(19), 3848-3854 (2010)
[ | ]

442
B.Q. Cao, M. Lorenz, G. Zimmermann, C. Czekalla, M. Brandt, H. von Wenckstern, M. Grundmann
p-type Phosphorus Doped ZnO Wires for Optoelectronic Applications
 
Nanowires, p. 117-132 (2010), P. Prete, ed., ISBN 978-953-7619-79-4
[ | | extra ]

441
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern
TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE
PCT Application WO 2010/149616 A1
[ | link ]

440
S. Puttnins, H. Zachmann, A. Rahm, G. Benndorf, M. Grundmann
Quantum Efficiency Analysis of Ion Beam Assisted Deposition of Cu(In,Ga)Se₂ Solar Cells on Flexible Substrates
Proc. 25th European Photovoltaic Solar Energy Conference and Exhibition, p. 3369-3371 (2010)
[ | ]

439
Report of The Physics Institutes of Universität Leipzig 2009
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

438
H. Frenzel, M. Lorenz, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Grundmann
ZnO-based metal-semiconductor field-effect transistors on glass substrates

Appl. Phys. Lett. 95(15), 153503:1-3 (2009)
[ | | IF: 3.794 ]

437
M. Voora, T. Hofmann, M. Brandt, M. Lorenz, N. Ashkenov, M. Grundmann, M. Schubert
Electrical properties of ZnO-BaTiO₃-ZnO heterostructures with asymmetric interface charge distribution

Appl. Phys. Lett. 95(8), 082902:1-3 (2009)
[ | | IF: 3.794 ]

436
V.M. Voora, T. Hofman, M. Schubert, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov
Resistive hysteresis and interface charge coupling in BaTiO₃-ZnO heterostructures

Appl. Phys. Lett. 94(14), 142904:1-3 (2009)
[ | | IF: 3.794 ]

435
S. Zhou, K. Potzger, Q. Xu, G. Talut, M. Lorenz, W. Skorupa, M. Helm, J. Fassbender, M. Grundmann, H. Schmidt
Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?

arxiv: 0907.3536 (2009)
[ | link ]

434
H. von Wenckstern, J. Zippel, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Two-dimensional electron gases in MgZnO/ZnO heterostructures

Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 99-100 (2009)
[ | ]

433
H. Frenzel, H. von Wenckstern, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Interface effects in ZnO metal-insulator-semiconductor and metal-semiconductor structures

Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 469-470 (2009)
[ | ]

432
R. Schmidt-Grund, C. Sturm, H. Hilmer, J. Sellmann, C. Czekalla, B. Rheinländer, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann
Exciton-polaritons in ZnO microcavity resonators

Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 175-176 (2009)
[ | ]

431
H. Hilmer, J. Sellmann, Ch. Sturm, R. Schmidt-Grund, B. Rheinländer, H. Hochmuth, J. Lenzner, M. Lorenz, M. Grundmann
PLD Growth of High Reflective All-Oxide Bragg Reflectors for ZnO Resonators

Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 151-152 (2009)
[ | ]

430
H. von Wenckstern, A. Lajn, A. Laufer, B.K. Meyer, H.H.M. Lorenz, M. Grundmann
Ag related defect state in ZnO thin films

Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 122-123 (2009)
[ | ]

429
M.W. Allen, S.M. Durbin, X. Weng, J.M. Redwing, K. Sarpatwari, S.E. Mohney, H. von Wenckstern, M. Grundmann
Temperature Dependent Properties of Nearly Ideal ZnO Schottky Diodes

IEEE Transact. Electr. Dev. 56(9), 2160-2164 (2009)
[ | | IF: 2.062 ]

428
M. Grundmann, C.P. Dietrich
Lineshape Theory of Photoluminescence from Semiconductor Alloys

J. Appl. Phys. 106(12), 123521:1-10 (2009)
[ | | IF: 2.21 ]

427
Q.Y. Xu, S. Zhou, D. Markó, K. Potzger, J. Fassbender, M. Vinnichenko, M. Helm, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
Paramagnetism in Co-doped ZnO films

J. Phys. D: Appl. Phys. 42(8), 085001:1-5 (2009)
[ | | IF: 2.772 ]

426
M. Brandt, H. Frenzel, H. Hochmuth, M. Lorenz, M. Grundmann, J. Schubert
Ferroelectric thin film field-effect transistors based on ZnO/BaTiO₃ heterostructures

J. Vac. Sci. Technol. B 27(3), 1789-1793 (2009)
[ | | IF: 1.267 ]

425
C. Czekalla, C. Sturm, R. Schmidt-Grund, B. Cao, J.Z. Pérez, M. Lorenz, M. Grundmann
Optical characterization of zinc oxide microlasers and microwire core-shell heterostructures

J. Vac. Sci. Technol. B 27(3), 1780-1783 (2009)
[ | | IF: 1.267 ]

424
A. Lajn, H. von Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Wickert, C. Vogt, R. Denecke
Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type ZnO

J. Vac. Sci. Technol. B 27(3), 1769-1773 (2009)
[ | | IF: 1.267 ]

423
M. Lange, J. Zippel, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann
Temperature Dependence of Localization Effects of Excitons in ZnO/Cd_xZn_1-xO/ZnO Double Heterostructures

J. Vac. Sci. Technol. B 27(3), 1741-1745 (2009)
[ | | IF: 1.267 ]