Publications Marius Grundmann


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Hirsch index (based on Publons)
h=70 (04/2021, 724 publ., 23946 cit., 5 most quoted: 1148, 969, 659, 652, 547)
Hirsch index (based on Google Scholar)
h=83 (04/2021, 38882 cit., last 5y: h=45, 5 most quoted: 4241, 1544, 1414, 1053, 1032)
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Citation numbers from Web of Knowledge, date: February-01 2019

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888
M. Grundmann
The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 4th edition
 
(Springer Nature, Cham, 2021), ISBN 978-3-030-51568-3
[ link | ]

887
J.E.N. Swallow, R.G. Palgrave, P.A.E. Murgatroyd, A. Regoutz, M. Lorenz, A. Hassa, M. Grundmann, H. von Wenckstern, J.B. Varley, T.D. Veal
Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

ACS Appl. Mater. Interfaces 13(2), 2807-2819 (2021)
[ | | IF: 7.504 ]

886
A. Reinhardt, H. von Wenckstern, M. Grundmann
All-amorphous Junction Field-Effect Transistors Based on High-Mobility Zinc Oxynitride

Adv. Electron. Mater. 7(4), 2000883:1-6 (2021)
[ | | IF: 6.312 ]

885
A. Welk, A. Reinhardt, O. Herrfurth, T. Schultz, H. von Wenckstern, N. Koch, M. Grundmann
Tuning material properties of amorphous zinc oxynitride thin films by magnesium cationic substitution

APL Mater. 9(2), 021120:1-8 (2021)
[ | | IF: 4.323 ]

884
P. Storm, S. Gierth, S. Selle, M.S. Bar, H. von Wenckstern, M. Grundmann, M. Lorenz
Evidence for oxygen being a dominant shallow acceptor in CuI

APL Mater., provisionally accepted:1-10 (2021)

883
O. Herrfurth, E. Krüger, S. Blaurock, H. Krautscheid, M. Grundmann
Hot-phonon effects in photo-excited wide-bandgap semiconductors

J. Phys.: Condens. Matter, online (2021)
[ | | IF: 2.721 ]

882
A. Hassa, M. Grundmann, H. von Wenckstern
Progression of Group-III Sesquioxides: Epitaxy, Solubility and Desorption

J. Phys. D: Appl. Phys. 54(22), 223001:1-15 (2021)
[ | | IF: 2.772 ]

881
O. Herrfurth, S. Richter, M. Rebarz, S. Espinoza, J. Zúñiga-Pérez, C. Deparis, J. Leveillee, A. Schleife, M. Grundmann, J. Andreasson, R. Schmidt-Grund
Transient birefringence and dichroism in ZnO studied with fs-time-resolved spectroscopic ellipsometry

Phys. Rev. Res. 3(1), 013246:1-12 (2021)
[ | ]

880
D. Splith, S. Müller, H. von Wenckstern, M. Grundmann
Numerical modeling of Schottky barrier diode characteristics

Phys. Status Solidi A, accepted:1-8 (2021)
[ | IF: 1.648 ]

879
M. Kneiß, P. Storm, A. Hassa, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann
Epitaxial Growth of κ-(AlxGa1−x)2O3 Layers and Superlattice Heterostructures up to x=0.48 on Highly Conductive Al-doped ZnO Thin Film Templates by Pulsed Laser Deposition

Phys. Status Solidi B 258(2), 202000359:1-10 (2021)
[ | | IF: 1.522 ]

878
A. Hassa, P. Storm, M. Kneiß, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann
Correction to: Structural and elastic properties of α-(AlxGa1−x)2O3 thin films on (11.0) Al2O3 substrates for the entire composition range

Phys. Status Solidi B 258(2), 2000632 (1 page) (2021)
[ | | IF: 1.522 ]

877
A. Hassa, P. Storm, M. Kneiß, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann
Structural and elastic properties of α-(AlxGa1−x)2O3 thin films on (11.0) Al2O3 substrates for the entire composition range

Phys. Status Solidi B 258(2), 2000394:1-10 (2021)
[ | | IF: 1.522 ]

876
W. Yu, G. Benndorf, Y. Jiang, K. Jiang, C. Yang, M. Lorenz, M. Grundmann
Control of optical absorption and emission of sputtered copper iodide thin films

Phys. Status Solidi RRL 15(1), 2000431:1-5 (2021)
[ | | IF: 2.58 ]

875
R. Karsthof, H. von Wenckstern, M. Grundmann
Identification of LiNi and VNi acceptor levels in doped nickel oxide
 
APL Mater. 8(12), 121106:1-7 (2020) [Featured article]
[ | | extra | IF: 4.323 ]

874
T. Schultz, M. Kneiß, P. Storm, D. Splith, H. von Wenckstern, M. Grundmann, N. Koch
Band offsets at κ-([Al,In]xGa1-x)2O3/MgO interfaces

ACS Appl. Mater. Interfaces 12(7), 8879-8885 (2020)
[ | | IF: 7.504 ]

873
O. Lahr, M. Bar, H. von Wenckstern, M. Grundmann
All-oxide transparent thin-film transistors based on amorphous zinc-tin-oxide fabricated at room temperature: Approaching the thermodynamic limit for sub-threshold swing

Adv. Electron. Mater. 6(10), 2000423:1-6 (2020)
[ | | IF: 6.312 ]

872
A. Reinhardt, H. von Wenckstern, M. Grundmann
Metal-Semiconductor Field-Effect Transistors Based on the Amorphous Multi-Anion Compound ZnON

Adv. Electron. Mater. 6(4), 1901066:1-5 (2020)
[ | | IF: 6.312 ]

871
M. Grundmann
Comment on "Stress–strain state in α-Ga2O3 epitaxial films on α-Al2O3 substrates" [Appl. Phys. Express 13, 075502 (2020)]

Appl. Phys. Expr. 13(8), 089101 (1 page) (2020)
[ | | IF: 2.567 ]

870
M. Budde, D. Splith, P. Mazzolini, A. Tahraoui, J. Feldl, M. Ramsteiner, H. von Wenckstern, M. Grundmann, O. Bierwagen
SnO/β-Ga2O3 vertical pn heterojunction diodes

Appl. Phys. Lett. 117(25), 252106:1-6 (2020)
[ | | IF: 3.794 ]

869
M. Grundmann, M. Lorenz
Epitaxial growth and strain relaxation of corundum-phase (Al,Ga)2O3 thin films from pulsed laser deposition at 1000°C on r-plane Al2O3

Appl. Phys. Lett. 117(24), 242102:1-4 (2020)
[ | | IF: 3.794 ]

868
M. Grundmann
Universal Relation for the Orientation of Dislocations from Prismatic Glide Systems in Hexagonal and Rhombohedral Strained Heterostructures

Appl. Phys. Lett. 116(8), 082104:1-3 (2020)
[ | | IF: 3.794 ]

867
P. Storm, M. Bar, S. Selle, C. Yang, H. von Wenckstern, M. Grundmann, M. Lorenz
High mobility, highly transparent, smooth, p-type CuI thin films grown by pulsed laser deposition

APL Mater. 8(9), 091115:1-8 (2020) [SciLight]
[ | | IF: 4.323 ]

866
O. Lahr, H. von Wenckstern, M. Grundmann
Ultrahigh-Performance Integrated Inverters Based on Amorphous Zinc-Tin-Oxide Deposited at Room Temperature

APL Mater. 8(9), 091111:1-8 (2020) [Editor's Pick]
[ | | IF: 4.323 ]

865
P. Schlupp, S. Vogt, H. von Wenckstern, M. Grundmann
Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates

APL Mater. 8(6), 061112:1-7 (2020)
[ | | IF: 4.323 ]

864
M. Kneiß, P. Storm, A. Hassa, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann
Growth, Structural and Optical Properties of Coherent κ-(AlxGa1-x)2O3/κ-Ga2O3 Quantum Well Superlattice Heterostructures

APL Mater. 8(5), 051112:1-14 (2020)
[ | | IF: 4.323 ]

863
M. Grundmann, M. Lorenz
Anisotropic Strain Relaxation Through Prismatic and Basal Slip in α-(Al,Ga)2O3 on R-Plane Al2O3

APL Mater. 8(2), 021108:1-14 (2020)
[ | | IF: 4.323 ]

862
A. Hassa, C. Sturm, M. Kneiß, D. Splith, H. von Wenckstern, T. Schultz, N. Koch, M. Lorenz, M. Grundmann
Solubility Limit and Material Properties of a κ-(AlxGa1−x)2O3 thin film with a lateral cation gradient on (00.1)Al2O3 by tin-assisted PLD

APL Mater. 8(2), 021103:1-7 (2020)
[ | | IF: 4.323 ]

861
R. Karsthof, H. von Wenckstern, M. Grundmann
Identification of LiNi and VNi acceptor levels in doped nickel oxide

arxiv: 2010.02694 (2020)
[ | link ]

860
M. Budde, D. Splith, P. Mazzolini, A. Tahraoui, J. Feldl, M. Ramsteiner, H. von Wenckstern, M. Grundmann, O. Bierwagen
SnO/β-Ga2O3 vertical pn heterojunction diodes

arxiv: 2010.00362 (2020)
[ | link ]

859
C. Wouters, C. Sutton, L.M. Ghiringhelli, T. Markurt, R. Schewski, A. Hassa, H. von Wenckstern, M. Grundmann, M. Scheffler, M. Albrecht
Investigating the ranges of (meta)stable phase formation in (InxGa1-x)2O3: Impact of the cation coordination

arxiv: 2008.04573 (2020)
[ | link ]

858
R. Staacke, R. John, M. Kneiß, C. Osterkamp, S. Diziain, F. Jelezko, M. Grundmann, J. Meijer
Method of full polarization control of microwave fields in a scalable transparent structure for spin manipulation

J. Appl. Phys. 128(19), 194301:1-9 (2020)
[ | | IF: 2.21 ]

857
V. Zviagin, C. Sturm, P. Esquinazi, M. Grundmann, R. Schmidt-Grund
Control of Magnetic Properties in Spinel ZnFe2O4 Thin Films Through Intrinsic Defect Manipulation

J. Appl. Phys. 128(16), 165702:1-7 (2020)
[ | | IF: 2.21 ]

856
C. Fares, M. Xian, D.J. Smith, M.R. McCartney, M. Kneiß, H. von Wenckstern, M. Grundmann, M. Tadjer, F. Ren, S.J. Pearton
Changes in band alignment during annealing at 600°C of ALD Al2O3 on (InxGa1-x)2O3 for x=0.25-0.74

J. Appl. Phys. 127(10), 105701:1-8 (2020)
[ | | IF: 2.21 ]

855
H. Wei, C. Yang, Y. Wu, B. Cao, M. Lorenz, M. Grundmann
From energy harvesting to topologically insulating behavior: ABO3–type epitaxial thin films and superlattices

J. Mater. Chem. C 8(44), 15575-15596 (2020)
[ | | IF: 7.059 ]

854
M. Fukumoto, C. Yang, W. Yu, C. Patzig, T. Höche, T. Ruf, R. Denecke, M. Lorenz, M. Grundmann
Experimental evidence of wide bandgap in triclinic (001)-oriented Sn5O2(PO4)2 thin films on Y2O3 buffered glass substrates

J. Mater. Chem. C 8(40), 14203-14207 (2020)
[ | | IF: 7.059 ]

853
J. Borgersen, L. Vines, Y.K. Frodason, A. Kuznetsov, H. von Wenckstern, M. Grundmann, M.W. Allen, J. Zúñiga-Pérez, K. Johansen
Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials

J. Phys.: Condens. Matter 32(50), 415704 (2020)
[ | | IF: 2.721 ]

852
A. Hassa, C. Wouters, M. Kneiß, D. Splith, C. Sturm, H. von Wenckstern, M. Albrecht, M. Lorenz, M. Grundmann
Control of Phase Formation of (AlxGa1-x)2O3 Thin Films on c-plane Al2O3

J. Phys. D: Appl. Phys. 53(48), 485105:1-9 (2020)
[ | | IF: 2.772 ]

851
S. Hohenberger, J.K. Jochum, M.J. Van Bael, K. Temst, C. Patzig, T. Höche, M. Lorenz, M. Grundmann
Enhanced Magnetoelectric Coupling in BaTiO3-BiFeO3 Multilayers - An Interface Effect

Materials 13(1), 197:1-14 (2020)
[ | | IF: 2.247 ]

850
L. Krieg, Z. Zhang, D. Splith, H. von Wenckstern, M. Grundmann, X. Wang, K.K. Gleason, T. Voss
Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition

Nano Express 1(1), 010013:1-7 (2020)
[ | ]

849
L. Krieg, F. Meierhofer, S. Gorny, S. Leis, D. Splith, Z. Zhang, H. von Wenckstern, M. Grundmann, X. Wang, J. Hartmann, C. Margenfeld, I.M. Clavero, A. Avramescu, T. Schimpke, D. Scholz, H.-J. Lugauer, M. Strassburg, J. Jungclaus, S. Bornemann, H. Spende, A. Waag, K.K. Gleason, T. Voss
Towards 3D hybrid inorganic/organic optoelectronics: light emission and electronic transport properties of GaN/oCVD-PEDOT structures

Nature Commun. 11, 5092:1-10 (2020)
[ | | IF: 12.001 ]

848
M. Grundmann
Topological States of the Diatomic Linear Chain: Effect of Impedance Matching to the Fixed Ends

New J. Phys. 22(8), 083076:1-7 (2020)
[ | | IF: 4.063 ]

847
S. Richter, O. Herrfurth, S. Espinoza, M. Rebarz, M. Kloz, J.A. Leveillee, A. Schleife, S. Zollner, M. Grundmann, J. Andreasson, R. Schmidt-Grund
Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry

New J. Phys. 22(8), 083066:1-14 (2020)
[ | | IF: 4.063 ]

846
C. Sturm, S. Höfer, K. Hingerl, T.G. Mayerhöfer, M. Grundmann
Dielectric function decomposition by dipole orientation distribution: Application to triclinic K2Cr2O7

New J. Phys. 22(7), 073041:1-11 (2020)
[ | | IF: 4.063 ]

845
C. Sturm, V. Zviagin, M. Grundmann
Dielectric tensor, optical activity and singular optic axes of KTP in the spectral range 0.5-8.4 eV

Phys. Rev. Mater. 4(5), 055203:1-7 (2020)
[ | ]

844
R. Karsthof, A.M. Anton, F. Kremer, M. Grundmann
Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium

Phys. Rev. Mater. 4(3), 034601:1-7 (2020)
[ | ]

843
C. Wouters, C. Sutton, L.M. Ghiringhelli, T. Markurt, R. Schewski, A. Hassa, H. von Wenckstern, M. Grundmann, M. Scheffler, M. Albrecht
Investigating the ranges of (meta)stable phase formation in (InxGa1-x)2O3: Importance of the cation coordination

Phys. Rev. Res. 4(12), 125001:1-10 (2020)
[ | ]

842
L. Trefflich, F. Dissinger, R. Schmidt-Grund, C. Sturm, S.R. Waldvogel, M. Grundmann
Influence of the excitation conditions on the emission behavior of carbon nanodot-based planar microcavities

Phys. Rev. Res. 2(4), 043216:1-6 (2020)
[ | ]

841
M. Grundmann
Topological States due to Third-Neighbor Coupling in a Diatomic Linear Elastic Chains

Phys. Status Solidi B 257(9), 202000176:1-5 (2020)
[ | | IF: 1.522 ]

840
M. Grundmann
A Most General and Facile Recipe for the Calculation of Heteroepitaxial Strain

Phys. Status Solidi B 257(12), 2000323:1-5 (2020)
[ | | IF: 1.522 ]

839
I. Mertig, M. Grundmann, W. Widdra
Functionality of Oxide Interfaces
 
Phys. Status Solidi B 257(7), 2000270 (1 page) (2020)
[ | | extra | IF: 1.522 ]

838
R. Karsthof, M. Grundmann, H. von Wenckstern, J. Zúñiga-Pérez, C. Deparis
Nickel oxide-based heterostructures with large band offsets

Phys. Status Solidi B 257(7), 1900639:1-11 (2020)
[ | | IF: 1.522 ]

837
V. Zviagin, M. Grundmann, R. Schmidt-Grund
Impact of Defects on Magnetic Properties of Spinel Zinc Ferrite Thin Films

Phys. Status Solidi B 257(7), 1900630:1-11 (2020)
[ | | IF: 1.522 ]

836
R. Denecke, M. Welke, P. Huth, J. Gräfe, K. Brachwitz, M. Lorenz, M. Grundmann, M. Ziese, P. Esquinazi, E. Goering, G. Schütz, A. Chassé, K.-M. Schindler
Magnetic Anisotropy in Thin Layers of (Mn,Zn)Fe2O4 on SrTiO3(001)

Phys. Status Solidi B 257(7), 1900627:1-8 (2020)
[ | | IF: 1.522 ]

835
H. von Wenckstern, M. Kneiß, P. Storm, M. Grundmann
A review of the segmented-target approach to combinatorial material synthesis by pulsed-laser deposition
 
Phys. Status Solidi B 257(7), 1900626:1-13 (2020)
[ | | IF: 1.522 ]

834
M. Grundmann
The Principal Axes Systems for the Elastic Properties of Monoclinic Gallia (β-Ga2O3)

Sci. Rep. 10, 19486:1-8 (2020)
[ | | IF: 5.578 ]

833
C. Yang, E. Rose, W. Yu, T. Stralka, F. Geng, M. Lorenz, M. Grundmann
Controllable growth of copper iodide by sputtering towards high-mobility thin films and self-assembled microcrystals
ACS Applied Electronic Materials 2(11), 3627-3632 (2020)
[ | ]

832
M. Grundmann
Building material gradients laterally and vertically - combinatorial acceleration of material research and new device perspectives
 
BuildMoNa Annual Report 2018, p. 20-22 (2020)
[ | link ]

831
D. Splith, P. Schlupp, H. von Wenckstern, M. Grundmann
All-oxide pn-heterojunction diodes with β-Ga2O3
 
Gallium Oxide: Crystal Growth, Materials Properties, and Devices, p. 689-702 (2020), M. Higashiwaki, S. Fujita, eds. (Springer, Cham, 2020), ISBN 978-3-030-37152-4
[ | | extra ]

830
H. von Wenckstern, D. Splith, M. Grundmann
Pulsed Laser Deposition of Ga2O3 and Related Alloys
 
Gallium Oxide: Crystal Growth, Materials Properties, and Devices, p. 273-291 (2020), M. Higashiwaki, S. Fujita, eds. (Springer, Cham, 2020), ISBN 978-3-030-37152-4
[ | | extra ]

829
K. Dorywalski, R. Schmidt-Grund, M. Grundmann
Hybrid GA-gradient method for thin films ellipsometric data evaluation
J. of Computational Science 47(11), 101201:1-7 (2020)
[ | ]

828
T. Jawinski, R. Scheer, H. von Wenckstern, M. Lorenz, M. Grundmann
Properties of epitaxially grown In2S3:V thin films for intermediate band solar cell application
Proc. 47th IEEE Photovoltaic Specialists Conference (PVSC), p. 2663-2666 (2020)
[ | ]

827
M. Grundmann
Oxid-Halbleiter mit ultrabreiter Bandlücke: Darstellung mittels kombinatorischer gepulster Laserdeposition und Untersuchung physikalischer Eigenschaften
Vakuum in Forschung und Praxis 32(6), 32-37 (2020)
[ | ]

826
J. Michel, D. Splith, J. Rombach, A. Papadogianni, T. Berthold, S. Krischok, M. Grundmann, O. Bierwagen, H. von Wenckstern, M. Himmerlich
Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3

ACS Appl. Mater. Interfaces 11(30), 27073-27087 (2019)
[ | | IF: 7.504 ]

825
O. Lahr, S. Vogt, H. von Wenckstern, M. Grundmann
Low-voltage operation of ring oscillators based on room-temperature-deposited amorphous zinc-tin-oxide channel MESFETs

Adv. Electron. Mater. 5(12), 1900548:1-5 (2019)
[ | | IF: 6.312 ]

824
O. Herrfurth, T. Pflug, M. Olbrich, M. Grundmann, A. Horn, R. Schmidt-Grund
Femtosecond-time-resolved imaging of the dielectric function of ZnO in the visible to near-IR spectral range

Appl. Phys. Lett. 115(21), 212103:1-5 (2019) [Editor's Pick]
[ | | IF: 3.794 ]

823
P. Storm, M. Kneiß, A. Hassa, T. Schultz, D. Splith, H. von Wenckstern, N. Koch, M. Lorenz, M. Grundmann
Epitaxial κ-(AlxGa1-x)2O3 Thin Films and Heterostructures grown by Tin-assisted VCCS-PLD

APL Mater. 7(11), 111110:1-8 (2019) [Editor's Pick]
[ | | IF: 4.323 ]

822
M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, M. Lorenz, M. Grundmann
Epitaxial Stabilization of Single Phase κ-(InxGa1-x)2O3 Thin Films up to x=0.28 on c-sapphire and κ-Ga2O3 (001) Templates by Tin-assisted VCCS-PLD

APL Mater. 7(10), 101102:1-10 (2019) [Editor's Pick]
[ | | IF: 4.323 ]

821
A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva, M. Grundmann
Erratum: “Structural, optical, and electrical properties of orthorhombic κ-(InxGa1-x)2O3 thin films” [APL Mater. 7, 022525 (2019)]

APL Mater. 7(7), 079901 (1 page) (2019)
[ | | IF: 4.323 ]

820
C. Fares, M. Kneiß, H. von Wenckstern, M. Grundmann, M. Tadjer, F. Ren, E. Lambers, S.J. Pearton
Valence Band Offsets for ALD SiO2 and Al2O3 on (InxGa1-x)2O3 for x=0.25-0.74

APL Mater. 7(7), 071115:1-7 (2019)
[ | | IF: 4.323 ]

819
A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva, M. Grundmann
Structural, optical and electrical properties of orthorhombic κ-(InxGa1-x)2O3 thin films

APL Mater. 7(2), 022525:1-9 (2019)
[ | | IF: 4.323 ]

818
M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, T. Schultz, N. Koch, M. Grundmann
Tin-Assisted Heteroepitaxial PLD-growth of κ-Ga2O3 Thin Films with High Crystalline Quality

APL Mater. 7(2), 022516:1-11 (2019)
[ | | IF: 4.323 ]

817
V. Zviagin, C. Sturm, P. Esquinazi, M. Grundmann, R. Schmidt-Grund
Control of Magnetic Order in Spinel ZnFe2O4 Thin Films Through Intrinsic Defect Manipulation

arxiv: 1909.13711 (2019)
[ | link ]

816
R. Karsthof, M. Grundmann, A.M. Anton, F. Kremer
Polaronic inter-acceptor hopping transport in intrinsically doped nickel oxide

arxiv: 1905.03537 (2019)
[ | link ]

815
S. Richter, O. Herrfurth, S. Espinoza, M. Rebarz, M. Kloz, J.A. Leveillee, A. Schleife, S. Zollner, M. Grundmann, J. Andreasson, R. Schmidt-Grund
Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry

arxiv: 1902.05832 (2019)
[ | link ]

814
S. Prucnal, Y. Berencén, M. Wang, J. Grenzer, M. Voelskow, R. Hübner, Y. Yamamoto, A. Scheit, F. Bärwolf, V. Zviagin, R. Schmidt-Grund, M. Grundmann, J. Żuk, M. Turek, A. Droździel, K. Pyszniak, R. Kudrawiec, M.P. Polak, L. Rebohle, W. Skorupa, M. Helm, S. Zhou
Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping

arxiv: 1901.01721 (2019)
[ | link ]

813
A. Hassa, H. von Wenckstern, L. Vines, M. Grundmann
Influence of oxygen pressure on growth of Si-doped (AlxGa1-x)2O3 thin films on c-sapphire substrates by pulsed laser deposition

ECS J. Solid State Sci. Techn. 8(7), Q3217-Q3220 (2019)
[ | | IF: 1.808 ]

812
S. Müller, L. Thyen, D. Splith, A. Reinhardt, H. von Wenckstern, M. Grundmann
High-quality Schottky Barrier Diodes on β-Gallium Oxide Thin Films on Glass Substrate

ECS J. Solid State Sci. Techn. 8(7), Q3126-Q3132 (2019)
[ | | IF: 1.808 ]

811
C. Fares, Z. Islam, A. Haque, M. Kneiß, H. von Wenckstern, M. Grundmann, M. Tadjer, F. Ren, S.J. Pearton
Effect of Annealing on the Band Alignment of ALD SiO2 on (AlxGa1-x)2O3 for x=0.2-0.65

ECS J. Solid State Sci. Techn. 8(12), P751-P756 (2019)
[ | | IF: 1.808 ]

810
C. Fares, M. Kneiß, H. von Wenckstern, M. Tadjer, F. Ren, E. Lambers, M. Grundmann, S.J. Pearton
Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x=0.2-0.65

ECS J. Solid State Sci. Techn. 8(6), P351-P356 (2019)
[ | | IF: 1.808 ]

809
M. Grundmann
Monolithic Waveguide-based Linear Photodetector Array for Use as Ultra-Compact Spectrometer

IEEE Transact. Electr. Dev. 66(1), 470-477 (2019)
[ | | IF: 2.062 ]

808
O. Lahr, Z. Zhang, F. Grotjahn, P. Schlupp, S. Vogt, H. von Wenckstern, A. Thiede, M. Grundmann
Full-swing, High-gain Inverters Based on ZnSnO JFETs and MESFETs

IEEE Transact. Electr. Dev. 66(8), 3376-3381 (2019)
[ | | IF: 2.062 ]

807
S. Prucnal, Y. Berencén, M. Wang, L. Rebohle, R. Kudrawiec, M. Polak, V. Zviagin, R. Schmidt-Grund, M. Grundmann, J. Grenzer, M. Turek, A. Drozdziel, K. Pyszniak, J. Zuk, M. Helm, W. Skorupa, S. Zhou
Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing

J. Appl. Phys. 125(20), 203105:1-7 (2019)
[ | | IF: 2.21 ]

806
V. Gottschalch, S. Merker, S. Blaurock, M. Kneiß, U. Teschner, M. Grundmann, H. Krautscheid
Heteroepitaxial growth of α-, β-, γ- and κ-Ga2O3 phases by metalorganic vapor phase epitaxy

J. Cryst. Growth 510(15 March 2019), 76-84 (2019)
[ | | IF: 1.552 ]

805
Z. Li, H. Li, Z. Wu, M. Wang, J. Luo, H. Torun, P. Hu, C. Yang, M. Grundmann, X. Liu, Y.Q. Fu
Advances in designs and mechanisms of semiconducting metal oxide nanostructures for high-precision gas sensors operated at room-temperature

Mater. Horiz. 6(3), 470-506 (2019)
[ | | IF: 13.183 ]

804
L. Brillson, J. Cox, H. Gao, G. Foster, W. Ruane, A. Jarjour, M. Allen, D. Look, H. von Wenckstern, M. Grundmann
Native Point Defect Measurement and Manipulation In ZnO Nanostructures

Materials 12(14), 2242:1-15 (2019)
[ | | IF: 2.247 ]

803
C. Sturm, V. Zviagin, M. Grundmann
Applicability of the constitutive equations for the determination of the material properties of optically active materials

Opt. Lett. 44(6), 1351-1354 (2019) [Editor's Pick]
[ | | IF: 3.589 ]

802
R. Karsthof, M. Grundmann, M. Anton, F. Kremer
Polaronic inter-acceptor hopping transport in intrinsically doped nickel oxide

Phys. Rev. B 99(23), 235201:1-13 (2019) [Editor's Suggestion]
[ | | IF: 3.767 ]

801
S. Richter, H.-G. Zirnstein, J. Zúñiga-Pérez, C. Deparis, L. Trefflich, C. Sturm, B. Rosenow, M. Grundmann, R. Schmidt-Grund
Voigt Exceptional Points in an Anisotropic ZnO-based Planar Microcavity: Square-Root Topology, Polarization Vortices, and Circularity

Phys. Rev. Lett. 123(22), 227401:1-7 (2019)
[ | | IF: 7.645 ]

800
M. Grundmann
Modeling of a waveguide-based UV-VIS-IR spectrometer based on a lateral (In,Ga)N alloy gradient
 
Phys. Status Solidi A 216(14), 1900170:1-5 (2019)
[ | | extra | IF: 1.648 ]

799
P. Schlupp, H. von Wenckstern, M. Grundmann
Electrical properties of vertical p-NiO/n-Ga2O3 and p-ZnCo2O4/n-Ga2O3 pn-heterodiodes

Phys. Status Solidi A 216(7), 1800729:1-6 (2019)
[ | | IF: 1.648 ]

798
R. Schmidt-Grund, T. Michalsky, M. Wille, M. Grundmann
Coherent polariton modes and lasing in ZnO nano- and microwires

Phys. Status Solidi B 256(4), 1800462:1-17 (2019)
[ | | IF: 1.522 ]

797
C.E. Precker, J. Barzola-Quiquia, P.D. Esquinazi, M. Stiller, M.K. Chan, M. Jaime, Z. Zhang, M. Grundmann
Record-Breaking Magnetoresistance at the Edge of a Microflake of Natural Graphite
 
Adv. Engin. Mater. 21(12), 1900991:1-6 (2019)
[ | | extra ]

796
M. Grundmann
Copper iodide - very transparent with many holes and no holes at the same time
 
BuildMoNa Annual Report 2017, p. 26-30 (2019)
[ | link ]

795
R. Staacke, R. John, M. Kneiß, M. Grundmann, J. Meijer
Highly transparent conductors for optical and microwave access to spin based quantum systems
NPJ Quantum Information 5, 98:1-5 (2019)
[ | ]

794
Report Halbleiterphysik/Semiconductor Physics 2018
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

793
M. Kneiß, P. Storm, G. Benndorf, M. Grundmann, H. von Wenckstern
Combinatorial material science and strain engineering enabled by pulsed laser deposition using radially segmented targets

ACS Comb. Sci. 20(11), 643-652 (2018)
[ | | IF: 3.032 ]

792
M. Kneiß, C. Yang, J. Barzola-Quiquia, G. Benndorf, H. von Wenckstern, P. Esquinazi, M. Lorenz, M. Grundmann
Suppression of grain boundary scattering in p-type transparent γ-CuI thin films due to interface tunneling currents

Adv. Mater. Interf. 5(6), 1701411:1-12 (2018)
[ | | IF: 4.279 ]

791
A. Jarjour, J.W. Cox, W.T. Ruane, H. von Wenckstern, M. Grundmann, L.J. Brillson
Single Metal Ohmic and Rectifying Contacts to ZnO Nanowires: A Defect Based Approach

Ann. Phys. 530(2), 1700335:1-6 (2018)
[ | | IF: 1.51 ]

790
M. Lorenz, S. Hohenberger, E. Rose, M. Grundmann
Atomically stepped, pseudomorphic, corundum-phase (Al1-xGax)2O3 thin films (0 ≤ x < 0.08) grown on R-plane sapphire

Appl. Phys. Lett. 113(23), 231902:1-5 (2018) [Editor's Pick]
[ | | IF: 3.794 ]

789
E. Krüger, V. Zviagin, C. Yang, C. Sturm, R. Schmidt-Grund, M. Grundmann
Temperature dependence of the dielectric function of thin film CuI in the spectral range (0.6-8.3) eV

Appl. Phys. Lett. 113(17), 172102:1-5 (2018)
[ | | IF: 3.794 ]

788
H. Modarresi, E. Menéndez, V.V. Lazenka, N. Pavlovic, M. Bisht, M. Lorenz, C. Petermann, M. Grundmann, A. Hardy, M.K. Van Bael, M.J. Van Bael, A. Vantomme, K. Temst
Morphology-induced spin frustration in granular BiFeO3 thin films: Origin of the magnetic vertical shift

Appl. Phys. Lett. 113(14), 142402:1-5 (2018)
[ | | IF: 3.794 ]

787
S. Vogt, H. von Wenckstern, M. Grundmann
MESFETs and inverters based on amorphous zinc-tin-oxide thin films prepared at room temperature

Appl. Phys. Lett. 113(13), 133501:1-5 (2018)
[ | | IF: 3.794 ]

786
H. Gao, S. Muralidharan, N. Pronin, M.R. Karim, S.M. White, T. Asel, G. Foster, S. Krishnamoorthy, S. Rajan, L.R. Cao, M. Higashiwaki, H. von Wenckstern, M. Grundmann, H. Zhao, D.C. Look, L.J. Brillson
Optical signatures of deep level defects in Ga2O3

Appl. Phys. Lett. 112(24), 242102:1-5 (2018)
[ | | IF: 3.794 ]

785
M. Grundmann
Elastic Theory of Pseudomorphic Monoclinic and Rhombohedral Heterostructures

J. Appl. Phys. 124(18), 185302:1-10 (2018) [invited]
[ | | IF: 2.21 ]

784
V. Prozheeva, R. Hölldobler, H. von Wenckstern, M. Grundmann, F. Tuomisto
Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1-x)2O3 thin films

J. Appl. Phys. 123(12), 125705:1-6 (2018)
[ | | IF: 2.21 ]

783
L.J. Brillson, G.M. Foster, J. Cox, W.T. Ruane, A.B. Jarjour, H. Gao, H. von Wenckstern, M. Grundmann, B. Wang, D.C. Look, A. Hyland, M.W. Allen
Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices

J. Electr. Mat. 47(9), 4980-4986 (2018)
[ | | IF: 1.635 ]

782
A. Bouvet-Marchand, A. Graillot, J. Volk, R. Dauksevicius, C. Sturm, E. Saoutieff, A. Viana, B. Christian, V. Lebedev, J. Radó, I.E. Lukács, M. Grundmann, D. Grosso, C. Loubat
Design of UV-Crosslinked Polymeric Thin Layers for Encapsulation of Piezoelectric ZnO Nanowires for Pressure-Based Fingerprint Sensors

J. Mater. Chem. C 6(3), 605-613 (2018)
[ | | IF: 7.059 ]

781
C. Laube, J. Hellweg, C. Sturm, J. Griebel, M. Grundmann, A. Kahnt, B. Abel
Photo-Induced-Heating of Graphitised Nanodiamonds monitored by the Raman-Diamond-Peak

J. Phys. Chem. C 122, 25685-25691 (2018)
[ | | IF: 4.814 ]

780
T. Michalsky, M. Wille, M. Grundmann, R. Schmidt-Grund
Tunable and switchable lasing in a ZnO microwire cavity at room temperature

J. Phys. D: Appl. Phys. 51(42), 425305:1-6 (2018)
[ | | IF: 2.772 ]

779
K. Brachwitz, T. Böntgen, J. Lenzner, K. Ghosh, M. Lorenz, M. Grundmann
Evolution of magnetization in epitaxial Zn1-xFexOz thin films (0 ≤ x ≤ 0.66) grown by pulsed laser deposition

J. Phys. D: Appl. Phys. 51(24), 245003:1-7 (2018)
[ | | IF: 2.772 ]

778
S. Hohenberger, V. Lazenka, K. Temst, C. Patzig, S. Selle, T. Höche, M. Grundmann, M. Lorenz
Effect of double layer thickness on magnetoelectric coupling in multiferroic BaTiO3-Bi0.95Gd0.05FeO3 multilayers

J. Phys. D: Appl. Phys. 51(18), 184002:1-9 (2018)
[ | | IF: 2.772 ]

777
J.W. Cox, G.M. Foster, A. Jarjour, H. von Wenckstern, M. Grundmann, L.J. Brillson
Defect Manipulation to Control ZnO Micro-/Nanowire - Metal Contacts

Nano Lett. 18(11), 6974-6980 (2018)
[ | | IF: 13.025 ]

776
T. Michalsky, M. Wille, M. Grundmann, R. Schmidt-Grund
Spatiotemporal evolution of coherent polariton modes in ZnO microwire cavities

Nano Lett. 18(11), 6820-6825 (2018)
[ | | IF: 13.025 ]

775
J.K. Jochum, M. Lorenz, H.P. Gunnlaugsson, C. Patzig, T. Höche, M. Grundmann, A. Vantomme, K. Temst, M.J. Van Bael, V. Lazenka
Impact of magnetization and hyperfine field distribution on high magnetoelectric coupling strength in BaTiO3-BiFeO3 multilayers

Nanoscale 10(12), 5574-5580 (2018)
[ | | extra | IF: 7.394 ]

774
T. Schulz, S. Bitter, P. Schlupp, H. von Wenckstern, N. Koch, M. Grundmann
The influence of oxygen deficiency on the rectifying behavior of transparent semiconducting oxide-metal interfaces

Phys. Rev. Appl. 9, 064001:1-8 (2018) [Editor's Suggestion]
[ | | IF: 4.808 ]

773
S. Prucnal, Y. Berencén, M. Wang, J. Grenzer, M. Voelskow, R. Hübner, Y. Yamamoto, A. Scheit, F. Bärwolf, V. Zviagin, R. Schmidt-Grund, M. Grundmann, J. Żuk, M. Turek, A. Droździel, K. Pyszniak, R. Kudrawiec, M.P. Polak, L. Rebohle, W. Skorupa, M. Helm, S. Zhou
Strain and band gap engineering in GeSn alloys via P doping

Phys. Rev. Appl. 10(6), 064055:1-11 (2018)
[ | | IF: 4.808 ]

772
M. Grundmann
Monolithic Forward-looking Photodetector for Use as Ultra-Compact Wavemeter with Wide Spectral Range

Phys. Status Solidi A 215(24), 1800651:1-5 (2018)
[ | | IF: 1.648 ]

771
T. Jawinski, L.A. Wägele, R. Scheer, M. Grundmann, H. von Wenckstern
Properties of In2S3-based pin-heterojunctions

Phys. Status Solidi A 215(11), 1700827:1-6 (2018)
[ | | IF: 1.648 ]

770
R. Pickenhain, M. Schmidt, H. von Wenckstern, G. Benndorf, A. Pöppl, R. Böttcher, M. Grundmann
Negative U Properties of the Deep Level E3 in ZnO

Phys. Status Solidi B 255(7), 1700670:1-16 (2018)
[ | | IF: 1.522 ]

769
D. Splith, S. Müller, H. von Wenckstern, M. Grundmann
Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films

Proc. SPIE 10533, 105330C:1-8 (2018), David J. Rogers, David C. Look, Ferechteh H. Teherani, eds.
[ | ]

768
T. Meister, F. Ellinger, J.W. Bartha, M. Berroth, J. Burghartz, M. Claus, L. Frey, A. Gagliardi, M. Grundmann, J. Hesselbarth, H. Klauk, K. Leo, P. Lugli, S. Mannsfeld, Y. Manoli, R. Negra, D. Neumaier, U. Pfeiffer, T. Riedl, S. Scheinert, U. Scherf, A. Thiede, G. Troester, M. Vossiek, R. Weigel, C. Wenger, G. Alavi, M. Becherer, C.A. Chavarin, M. Darwish, M. Ellinger, C.-Y. Fan, M. Fritsch, F. Grotjahn, M. Gunia, K. Haase, P. Hillger, K. Ishida, M. Jank, S. Knobelspies, M. Kuhl, G. Lupina, S.M. Naghadeh, N. Münzenrieder, S. Özbek, M. Rasteh, G.A. Salvatore, D. Schrüfer, C. Strobel, M. Theisen, C. Tückmantel, H. von Wenckstern, Z. Wang, Z. Zhang
Program FFlexCom
2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), p. 1-4 (2018)
[ | ]

767
S. Richter, J. Zúñiga-Pérez, C. Deparis, L. Trefflich, H.-G. Zirnstein, T. Michalsky, C. Sturm, B. Rosenow, M. Grundmann, R. Schmidt-Grund
Exceptional Points in the Dispersion of Optically Anisotropic Planar Microcavities
IEEE Photonics Society Summer Topical Meeting Series, p. 195-196 (2018), ISBN 978-1-5386-4076-0
[ | ]

766
T. Michalsky, M. Wille, E. Krüger, C. Sturm, M. Grundmann, R. Schmidt-Grund
Coherent polariton states and lasing in ZnO nano- and microstructures
IEEE Photonics Society Summer Topical Meeting Series, p. 171-172 (2018), ISBN 978-1-5386-4076-0
[ | ]

765
Report Halbleiterphysik/Semiconductor Physics 2017
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

764
Report of The Physics Institutes of Universität Leipzig 2017
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

763
S. Bitter, P. Schlupp, H. von Wenckstern, M. Grundmann
The Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc-Tin-Oxide with Various Cation Composition

ACS Appl. Mater. Interfaces 9(31), 26574-26581 (2017)
[ | | IF: 7.504 ]

762
M. Lorenz, D. Hirsch, C. Patzig, T. Höche, S. Hohenberger, H. Hochmuth, V. Lazenka, K. Temst, M. Grundmann
Correlation of interface impurities and chemical gradients with magnetoelectric coupling strength in multiferroic BiFeO3-BaTiO3 superlattices

ACS Appl. Mater. Interfaces 9(22), 18956-18965 (2017)
[ | | IF: 7.504 ]

761
C. Sturm, R. Schmidt-Grund, V. Zviagin, M. Grundmann
Temperature dependence of the dielectric tensor of monoclinic dielectric Ga2O3 single crystals in the spectral range 0.5-8.5 eV

Appl. Phys. Lett. 111(8), 082102:1-4 (2017)
[ | | IF: 3.794 ]

760
M. Wille, E. Krüger, S. Blaurock, V. Zviagin, R. Deichsel, G. Benndorf, L. Trefflich, V. Gottschalch, H. Krautscheid, R. Schmidt-Grund, M. Grundmann
Lasing in cuprous iodide microwires

Appl. Phys. Lett. 111(3), 031105:1-5 (2017)
[ | | IF: 3.794 ]

759
M. Lorenz, J. Barzola-Quiquia, C. Yang, C. Patzig, T. Höche, P. Esquinazi, M. Grundmann, H. Wei
Charge transfer-induced magnetic exchange bias and electron localization in (111)- and (001)-oriented LaNiO3/LaMnO3 superlattices

Appl. Phys. Lett. 110(10), 102403:1-5 (2017)
[ | | IF: 3.794 ]

758
V. Lazenka, M. Lorenz, H. Modarresi, J.K. Jochum, H.P. Gunnlaugsson, M. Grundmann, M.J. Van Bael, K. Temst, A. Vantomme
Interface induced out-of-plane magnetic anisotropy in magnetoelectric BiFeO3-BaTiO3 superlattices

Appl. Phys. Lett. 110(9), 092902:1-5 (2017)
[ | | IF: 3.794 ]

757
C. Sturm, M. Wille, J. Lenzner, S. Khujanov, M. Grundmann
Non-linear optical deformation potentials in uniaxially strained ZnO microwires

Appl. Phys. Lett. 110(6), 062103:1-4 (2017)
[ | | IF: 3.794 ]

756
Y. Kumar, I. Lorite, M. Lorenz, P.D. Esquinazi, M. Grundmann
Effect of annealing on the magnetic properties of zinc ferrite thin films

arxiv: 1702.06033 (2017)
[ | link ]

755
K. Dorywalski, N. Lemée, B. Andriyevsky, R. Schmidt-Grund, M. Grundmann, M. Piasecki, M. Bousquet, T. Krzyżyński
Optical properties of epitaxial Na0.5Bi0.5TiO3 lead-free piezoelectric thin films: Ellipsometric and theoretical studies

Appl. Surf. Sci. 421, 367-372 (2017)
[ | | IF: 2.112 ]

754
M. Welke, K. Brachwitz, M. Lorenz, M. Grundmann, K.-M. Schindler, A. Chasse, R. Denecke
Structure and cation distribution in (Mn0.5Zn0.5)Fe2O4 thin films on SrTiO3(001)

J. Appl. Phys. 121(22), 225305:1-7 (2017)
[ | | IF: 2.21 ]

753
V. Gottschalch, S. Blaurock, G. Benndorf, J. Lenzner, M. Grundmann, H. Krautscheid
Copper Iodide synthesized by iodization of Cu-films and deposited using MOCVD

J. Cryst. Growth 471, 21-28 (2017)
[ | | IF: 1.552 ]

752
M. Lorenz, H. Wei, F. Jung, S. Hohenberger, H. Hochmuth, M. Grundmann
Two-dimensional Frank - van der Merwe growth of functional oxide and nitride thin film superlattices by pulsed laser deposition

J. Mat. Res. 32(21), 3936-3946 (2017)
[ | | IF: 1.713 ]

751
H. Wei, C. Yang, J.L. Barzola-Quiquia, M. Welke, R. Denecke, C. Patzig, T. Höche, P. Esquinazi, M. Grundmann, M. Lorenz
Ferromagnetic phase transition and single-gap type electrical conductivity of epitaxial LaMnO3/LaAlO3 superlattices

J. Phys. D: Appl. Phys. 50(43), 43LT02:1-6 (2017)
[ | | IF: 2.772 ]

750
L. Vines, C. Bhoodoo, H. von Wenckstern, M. Grundmann
Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level

J. Phys. D: Appl. Phys. 30(2), 025502:1-6 (2017)
[ | | IF: 2.772 ]

749
C. Yang, D. Souchay, M. Kneiß, M. Bogner, H.M. Wei, M. Lorenz, O. Oeckler, G. Benstetter, Y.Q. Fu, M. Grundmann
Transparent Flexible Thermoelectric Material Based on Non-toxic Earth-Abundant p-Type Copper Iodide Thin Film

Nature Commun. 8, 16076:1-7 (2017)
[ | | extra | IF: 12.001 ]

748
M. Zapf, R. Röder, K. Winkler, L. Kaden, J. Greil, M. Wille, M. Grundmann, R. Schmidt-Grund, A. Lugstein, C. Ronning
Dynamical Tuning of Nanowire Lasing Spectra

Nano Lett. 17(11), 6637-6643 (2017)
[ | | IF: 13.025 ]

747
A. Shkurmanov, C. Sturm, H. Franke, J. Lenzner, M. Grundmann
Low temperature PLD-growth of ultrathin ZnO nanowires by using ZnxAl1-xO and ZnxGa1-xO seed layers

Nanoscale Res. Lett. 12, 134:1-7 (2017)
[ | | IF: 2.584 ]

746
A. deP. Martín, M. Lorenz, M. Grundmann, Th. Höche
Laser Welding of Fused Silica Glass with Sapphire Using a Non- Stoichiometric, Fresnoitic Ba2TiSi2O8

Optics & Laser Technol. 92, 85-94 (2017)
[ | | IF: 1.647 ]

745
S. Richter, T. Michalsky, C. Sturm, B. Rosenow, M. Grundmann, R. Schmidt-Grund
Erratum: Exceptional points in anisotropic planar microcavities

Phys. Rev. A 96(5), 059902E:1-2 (2017)
[ | | IF: 3.042 ]

744
S. Richter, T. Michalsky, C. Sturm, B. Rosenow, M. Grundmann, R. Schmidt-Grund
Exceptional points in anisotropic planar microcavities

Phys. Rev. A 95, 023836:1-9 (2017)
[ | | IF: 3.042 ]

743
P. Schlupp, H. von Wenckstern, M. Grundmann
Schottky barrier diodes based on room temperature fabricated amorphous zinc tin oxide thin film

Phys. Status Solidi A 214(10), 1700210:1-8 (2017)
[ | | IF: 1.648 ]

742
M. Grundmann
Strain in Pseudomorphic Monoclinic Ga2O3-based Heterostructures

Phys. Status Solidi B 254(9), 1700134:1-7 (2017)
[ | | IF: 1.522 ]

741
M. Grundmann, C. Sturm, C. Kranert, S. Richter, R. Schmidt-Grund, C. Deparis, J. Zúñiga-Pérez
Optically Anisotropic Media: New Approaches to the Dielectric Function, Singular Axes, Raman Scattering Intensities and Microcavity Modes
 
Phys. Status Solidi RRL 11(1), 1600295:1-19 (2017)
[ | | extra | IF: 2.58 ]

740
M. Grundmann, S. Richter, T. Michalsky, C. Sturm, J. Zúñiga-Pérez, R. Schmidt-Grund
Exceptional points in anisotropic photonic structures: From non-Hermitian physics to possible device applications

Proc. SPIE 10105, 101050K:1-8 (2017), Ferechteh H. Teherani, David C. Look, David J. Rogers, eds.
[ | ]

739
S. Müller, H. von Wenckstern, F. Schmidt, D. Splith, H. Frenzel, M. Grundmann
Method of choice for fabrication of high-quality β-gallium oxide-based Schottky diodes

Semic. Sci. Technol. 32(6), 065013:1-8 (2017)
[ | | IF: 2.098 ]

738
T. Lühmann, R. Wunderlich, R. Schmidt-Grund, J. Barzola-Quiquia, P. Esquinazi, M. Grundmann, J. Meijer
Investigation of the graphitization process of ion-beam irradiated diamond using ellipsometry, Raman spectroscopy and electrical transport measurements
Carbon 121, 512-517 (2017)
[ | ]

737
Y. Kumar, I. Lorite, M. Lorenz, P. Esquinazi, M. Grundmann
Effect of annealing on the magnetic properties of zinc ferrite thin films
Mater. Lett. 195, 89-91 (2017)
[ | ]

736
H.-E. Zschau, M. Schütze, M.C. Galetz, B.M. Gleeson, S. Neve, M. Lorenz, M. Grundmann
Surface Chemistry Evolution of F-doped Ni-base Superalloy upon Heat Treatment
Materials and Corrosion 68(2), 220-227 (2017)
[ | ]

735
Report Halbleiterphysik/Semiconductor Physics 2016
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

734
Report of The Physics Institutes of Universität Leipzig 2016
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

733
M. Grundmann
Felix Bloch (1905-1983) in Leipzig (in English)
 
WWW homepage of Felix Bloch Institute for Solid State Physics of Universität Leipzig:1-4
[ | link ]

732
M. Grundmann
Felix Bloch (1905-1983) in Leipzig (in German)
 
WWW-Seite des Felix-Bloch-Institut für Festkörperphysik der Universität Leipzig:1-4
[ | link ]

731
M. Grundmann
The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 3rd edition
 
(Springer, Heidelberg, 2016), ISBN 978-3-319-23879-1
[ link | | extra ]

730
N. Petkov, J. Volk, R. Erdélyi, I.E. Lukács, T. Nagata, C. Sturm, M. Grundmann
Contacting ZnO individual crystal facets by direct write lithography

ACS Appl. Mater. Interfaces 8(36), 23891-23898 (2016)
[ | | IF: 7.504 ]

729
S. Bitter, P. Schlupp, M. Bonholzer, H. von Wenckstern, M. Grundmann
Influence of the cation ratio on optical and electrical properties of zinc-tin-oxide thin films from pulsed-laser deposition

ACS Comb. Sci. 18(4), 188-194 (2016)
[ | | IF: 3.032 ]

728
F.J. Klüpfel, H. von Wenckstern, M. Grundmann
Ring Oscillators based on ZnO Channel JFETs and MESFETs
 
Adv. Electron. Mater. 2(7), 1500431:1-5 (2016)
[ | | extra | IF: 6.312 ]

727
M. Lorenz, V. Lazenka, P. Schwinkendorf, M.J. Van Bael, A. Vantomme, K. Temst, M. Grundmann, T. Höche
Epitaxial coherence at interfaces as origin of high magnetoelectric coupling in multiferroic BaTiO3 - BiFeO3 superlattices

Adv. Mater. Interf. 3(11), 1500822:1-7 (2016)
[ | | extra | IF: 4.279 ]

726
M. Stiller, J. Barzola-Quiquia, P. Esquinazi, D. Spemann, J. Meijer, M. Lorenz, M. Grundmann
Strong out-of-plane magnetic anisotropy in ion irradiated anatase TiO2 thin films

AIP Adv. 6(12), 125009:1-13 (2016)
[ | | IF: 1.444 ]

725
A. Shkurmanov, C. Sturm, J. Lenzner, G. Feuillet, F. Tendille, P. De Mierry, M. Grundmann
Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates

AIP Adv. 6(9), 095013:1-5 (2016)
[ | | IF: 1.444 ]

724
H. Wei, M. Grundmann, M. Lorenz
Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO3/ LaAlO3 (111) superlattices

Appl. Phys. Lett. 109(8), 082108:1-5 (2016)
[ | | IF: 3.794 ]

723
M. Wille, T. Michalsky, E. Krüger, M. Grundmann, R. Schmidt-Grund
Absorptive lasing mode suppression in ZnO nano- and microcavities

Appl. Phys. Lett. 109(6), 061102:1-4 (2016)
[ | | IF: 3.794 ]

722
I. Lorite, Y. Kumar, P. Esquinazi, S. Friedländer, A. Pöppl, T. Michalsky, J. Meijer, M. Grundmann, T. Mayer
Photo-enhanced magnetization in Fe-doped ZnO nanowires

Appl. Phys. Lett. 109(1), 012401:1-4 (2016)
[ | | IF: 3.794 ]

721
J. Zúñiga-Pérez, L. Kappei, C. Deparis, F. Reveret, M. Grundmann, E. de Prado, O. Jamadi, J. Leymarie, S. Chenot, M. Leroux
Homoepitaxial nonpolar (10-10) ZnO/ZnMgO heterostructures: from single layers to monolithic Bragg reflectors and optical microcavities

Appl. Phys. Lett. 108(25), 251904:1-5 (2016)
[ | | IF: 3.794 ]

720
Z. Zhang, H. von Wenckstern, J. Lenzner, M. Grundmann
Wavelength-selective ultraviolet (Mg,Zn)O photodiodes: Tuning of parallel composition gradients with oxygen pressure

Appl. Phys. Lett. 108(24), 243503:1-5 (2016)
[ | | IF: 3.794 ]

719
V. Zviagin, Y. Kumar, I. Lorite, P. Esquinazi, M. Grundmann, R. Schmidt-Grund
Ellipsometric Investigation of ZnFe2O4 Thin Films in Relation to Magnetic Properties

Appl. Phys. Lett. 108(13), 131901:1-4 (2016)
[ | | IF: 3.794 ]

718
Z. Zhang, H. von Wenckstern, J. Lenzner, M. Lorenz, M. Grundmann
Visible-blind and solar-blind ultraviolet photodiodes based on (InxGa1-x)2O3

Appl. Phys. Lett. 108(12), 123503:1-5 (2016)
[ | | IF: 3.794 ]

717
R. Khazaka, M. Grundmann, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, J.-F. Michaud
Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C SiC(001)

Appl. Phys. Lett. 108(1), 011608:1-4 (2016)
[ | | IF: 3.794 ]

716
S. Richter, T. Michalsky, C. Sturm, B. Rosenow, M. Grundmann, R. Schmidt-Grund
Exceptional points in anisotropic planar microcavities

arxiv: 1609.07653 (2016)
[ | link ]

715
C. Kranert, C. Sturm, R. Schmidt-Grund, M. Grundmann
Raman tensor elements of β-Ga2O3

arxiv: 1606.07409 (2016)
[ | link ]

714
I. Lorite, Y. Kumar, P. Esquinazi, S. Friedländer, A. Pöppl, T. Michalsky, J. Meijer, M. Grundmann, T. Meyer, I. Estrela-Lopis
Photo-enhanced magnetization in Fe-doped ZnO nanowires

arxiv: 1606.06955 (2016)
[ | link ]

713
M. Jenderka, S. Richter, M. Lorenz, M. Grundmann
Fundamental absorption edges in heteroepitaxial Y1Bi1O3 thin films

arxiv: 1606.03945 (2016)
[ | link ]

712
T. Michalsky, H. Franke, R. Buschlinger, U. Peschel, M. Grundmann, R. Schmidt-Grund
Coexistence of strong and weak coupling in ZnO nanowire cavities

arxiv: 1602.06804 (2016)
[ | link ]

711
C. Sturm, R. Schmidt-Grund, C. Kranert, J. Furthmüller, F. Bechstedt, M. Grundmann
Dipole Analysis of the Dielectric Function of Colour Dispersive Materials: Application to Monoclinic Ga2O3

arxiv: 1601.07892 (2016)
[ | link ]

710
M. Wille, C. Sturm, T. Michalsky, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann
Carrier density driven material dynamics of lasing ZnO Nanowires

arxiv: 1601.03866 (2016)
[ | link ]

709
M. Grundmann, C. Sturm
The Singular Optical Axes in Biaxial Crystals and Analysis of Their Spectral Dispersion Effects in β-Ga2O3

arxiv: 1601.03760:1-7 (2016)
[ | link ]

708
T. Michalsky, H. Franke, R. Buschlinger, U. Peschel, M. Grundmann, R. Schmidt-Grund
Coexistence of strong and weak coupling in ZnO nanowire cavities

Eur. Phys. J. Appl. Phys. 74(3), 30502:1-10 (2016)
[ | | IF: 0.667 ]

707
A. Mavlonov, S. Richter, H. von Wenckstern, R. Schmidt-Grund, M. Lorenz, M. Grundmann
Temperature dependent self-compensation in Al and Ga-doped Mg0.05Zn0.95O thin films grown by pulsed laser deposition

J. Appl. Phys. 120(20), 205703:1-6 (2016)
[ | | IF: 2.21 ]

706
M. Jenderka, S. Richter, M. Lorenz, M. Grundmann
Fundamental absorption edges in heteroepitaxial YBiO3 thin films

J. Appl. Phys. 120(12), 125702:1-4 (2016)
[ | | IF: 2.21 ]

705
K. Narushima, Y. Ashizawa, K. Brachwitz, H. Hochmuth, M. Lorenz, M. Grundmann, K. Nakagawa
Magnetic activity of surface plasmon resonance using dielectric magnetic materials fabricated on quartz glass substrate

Jpn. J. Appl. Phys. 55(7S3), 07MC05:1-4 (2016)
[ | | IF: 1.067 ]

704
M. Lorenz, M.S.R. Rao, T. Venkatesan, E. Fortunato, P. Barquinha, R. Branquinho, D. Salgueiro, R. Martins, E. Carlos, A. Liu, F.K. Shan, M. Grundmann, H. Boschker, J. Mukherjee, M. Priyadarshini, N. DasGupta, D.J. Rogers, F.H. Teherani, E.V. Sandana, P. Bove, K. Rietwyk, A. Zaban, A. Veziridis, A. Weidenkaff, M. Muralidhar, M. Murakami, S. Abel, J. Fompeyrine, J. Zúñiga-Pérez, R. Ramesh, N.A. Spaldin, S. Ostanin, V. Borisov, I. Mertig, V. Lazenka, G. Srinivasan, W. Prellier, M. Uchida, M. Kawasaki, R. Pentcheva, P. Gegenwart, F.M. Granozio, J. Fontcuberta, N. Pryds
The 2016 oxide electronic materials and oxide interfaces roadmap (ch. 3, M. Grundmann: Bipolar oxide devices)
 
J. Phys. D: Appl. Phys. 49(43), 433001:1-53 (2016)
[ | | extra | IF: 2.772 ]

703
H. Modarresi, V. Lazenka, E. Menéndez, M. Lorenz, M. Bisht, A. Volodin, C. Van Haesendonck, M. Grundmann, M.J. Van Bael, K. Temst, A. Vantomme
Induced ferromagnetism and magnetoelectric coupling in ion-beam synthesized BiFeO3-CoFe2O4 nanocomposite thin films

J. Phys. D: Appl. Phys. 49(32), 325302:1-6 (2016)
[ | | IF: 2.772 ]

702
M. Grundmann, F. Klüpfel, R. Karsthof, P. Schlupp, F.-L. Schein, D. Splith, C. Yang, S. Bitter, H. von Wenckstern
Oxide Bipolar Electronics: Materials, Devices and Circuits

J. Phys. D: Appl. Phys. 49(21), 213001:1-25 (2016) [Topical Review]
[ | | IF: 2.772 ]

701
R. Karsthof, H. von Wenckstern, M. Grundmann
Semi-transparent ZnO-based UV-active solar cells: Analysis of electrical loss mechanisms

J. Vac. Sci. Technol. B 34(4), 04J107:1-8 (2016)
[ | | IF: 1.267 ]

700
M. Lorenz, G. Wagner, V. Lazenka, P. Schwinkendorf, M. Bonholzer, M.J. Van Beal, A. Vantomme, K. Temst, O. Oeckler, M. Grundmann
Correlation of high magnetoelectric coupling with oxygen vacancy superstructure in epitaxial multiferroic BaTiO3-BiFeO3 composite thin films

Materials 9, 44:1-13 (2016)
[ | | extra | IF: 2.247 ]

699
A. de Pablos-Martín, S. Tismer, F. Naumann, M. Krause, M. Lorenz, M. Grundmann, T. Höche
Evaluation of the Bond Quality of Laser-Joined Sapphire Wafers using a Fresnoite-Glass Sealant

Microsyst. Technol. 22(1), 207-214 (2016)
[ | | IF: 0.952 ]

698
L. Brillson, W.T. Ruane, H. Gao, Y. Zhang, J. Luo, H. von Wenckstern, M. Grundmann
Spatially-Resolved Cathodoluminescence Spectroscopy of ZnO Defects

Mat. Sci. Semic. Process. 57, 197-209 (2016)
[ | | IF: 2.264 ]

697
W.T. Ruane, K.M. Johansen, K. Leedy, D.C. Look, H. von Wenckstern, M. Grundmann, L.J. Brillson
Defect Segregation and Optical Emission in ZnO Nano- and Microwires

Nanoscale 8, 7631-7637 (2016)
[ | | IF: 7.394 ]

696
M. Wille, C. Sturm, T. Michalsky, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann
Carrier density driven material dynamics of lasing ZnO Nanowires

Nanotechnology 27(22), 225702:1-7 (2016)
[ | | IF: 3.842 ]

695
A. de Pablos-Martin, S. Tismer, G. Benndorf, M. Mittag, M. Lorenz, M. Grundmann, Th. Höche
Laser soldering of sapphire substrates using a BaTiAl6O12 thin-film glass sealant

Optics & Laser Technol. 81, 153-161 (2016)
[ | | IF: 1.647 ]

694
A. de Pablos-Martin, G. Benndorf, S. Tismer, M. Mittag, A. Cismak, M. Lorenz, M. Grundmann, Th. Höche
Laser-Welded Fused Silica Substrates Using a Luminescent Fresnoite-Based Sealant

Optics & Laser Technol. 80, 176-185 (2016)
[ | | IF: 1.647 ]

693
C. Yang, M. Kneiß, M. Lorenz, M. Grundmann
Room-temperature Synthesized Copper Iodide Thin Film as Degenerate p-Type Transparent Conducting Material with a Boosted Figure of Merit

PNAS 113(46), 12929-12933 (2016)
[ | | IF: 9.423 ]

692
C. Sturm, M. Grundmann
The Singular Optical Axes in Biaxial Crystals and Analysis of Their Spectral Dispersion Effects in β-Ga2O3

Phys. Rev. A 93(5), 053839:1-8 (2016)
[ | | extra | IF: 3.042 ]

691
C. Sturm, R. Schmidt-Grund, C. Kranert, J. Furthmüller, F. Bechstedt, M. Grundmann
Dipole analysis of the dielectric function of color dispersive materials: Application to monoclinic Ga2O3

Phys. Rev. B 94(3), 035148:1-11 (2016)
[ | | IF: 3.767 ]

690
M. Thunert, A. Janot, H. Franke, C. Sturm, T. Michalsky, M.D. Martín, L. Viña, B. Rosenow, M. Grundmann, R. Schmidt-Grund
Cavity Polariton Condensate in a Disordered Environment

Phys. Rev. B 93(6), 064203:1-12 (2016)
[ | | IF: 3.767 ]

689
C. Kranert, C. Sturm, R. Schmidt-Grund, M. Grundmann
Raman Tensor Formalism for Optically Anisotropic Crystals

Phys. Rev. Lett. 116(12), 127401:1-5 (2016)
[ | | extra | IF: 7.645 ]

688
R. Karsthof, P. Räcke, Z. Zhang, H. von Wenckstern, M. Grundmann
Semi-transparent n-ZnO/p-NiO UV solar cells
 
Phys. Status Solidi A 213(1), 30-37 (2016)
[ | | extra | IF: 1.648 ]

687
A. Reinhardt, H. Frenzel, H. von Wenckstern, D. Spemann, M. Grundmann
Electron transport mechanism in rf-sputtered amorphous zinc oxynitride thin films

Phys. Status Solidi A 213(7), 1767-1773 (2016)
[ | | IF: 1.648 ]

686
V. Zviagin, P. Richter, T. Böntgen, M. Lorenz, M. Ziese, D.R.T. Zahn, G. Salvan, M. Grundmann, R. Schmidt-Grund
Comparative Study of Optical and Magneto-Optical Properties of Normal, Disordered and Inverse Spinel Type Oxides

Phys. Status Solidi B 253(3), 429-436 (2016)
[ | | IF: 1.522 ]

685
M. Grundmann, J. Zúñiga-Pérez
Pseudomorphic ZnO-based heterostructures: from polar through all semipolar to nonpolar orientations

Phys. Status Solidi B 253(2), 351-360 (2016)
[ | | IF: 1.522 ]

684
C. Kranert, C. Sturm, R. Schmidt-Grund, M. Grundmann
Raman tensor elements of β-Ga2O3

Sci. Rep. 6, 35964:1-9 (2016)
[ | | IF: 5.578 ]

683
C. Yang, M. Kneiß, F.-L. Schein, M. Lorenz, M. Grundmann
Room-temperature domain-epitaxy of copper iodide thin films for transparent CuI/ZnO heterojunctions with high rectification ratios larger than 109

Sci. Rep. 6, 21937:1-8 (2016)
[ | | extra | IF: 5.578 ]

682
M. Grundmann
Don't mourn the losses
 
BuildMoNa Annual Report 2016, p. 26-29 (2016)
[ | link ]

681
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern
TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE
JP 5897621 B2 (Japan Patent Office, 2016)
[ ]

680
A. Shkurmanov, C. Sturm, H. Hochmuth, M. Grundmann
Growth kinetics of ultrathin ZnO Nanowires grown by Pulsed Laser Deposition
Proc. Eng. 168, 1156-1159 (2016)
[ | ]

679
Report Halbleiterphysik/Semiconductor Physics 2015
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

678
Report of The Physics Institutes of Universität Leipzig 2015
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

677
H. von Wenckstern, D. Splith, A. Werner, S. Müller, M. Lorenz, M. Grundmann
Properties of Schottky barrier diodes on (InxGa1-x)2O3 for 0.01 ≤ x ≤ 0.85 determined by using a combinatorial approach

ACS Comb. Sci. 17(12), 710-715 (2015)
[ | | IF: 3.032 ]

676
H. von Wenckstern, D. Splith, S. Lanzinger, F. Schmidt, S. Müller, P. Schlupp, R. Karsthof, M. Grundmann
pn-heterodiodes with n-type In2O3

Adv. Electron. Mater. 1(4), 1400026:1-6 (2015)
[ | | IF: 6.312 ]

675
P. Schlupp, F.-L. Schein, H. von Wenckstern, M. Grundmann
All Amorphous Oxide Bipolar Heterojunction Diodes from Abundant Metals

Adv. Electron. Mater. 1(1-2), 1400023:1-5 (2015)
[ | | IF: 6.312 ]

674
S. Schubert, F. Schmidt, H. von Wenckstern, M. Grundmann, K. Leo, L. Müller-Meskamp
Eclipse Pulsed Laser Deposition for Damage-Free Preparation of Transparent ZnO Electrodes on Top of Organic Solar Cells

Adv. Funct. Mater. 25(27), 4321-4327 (2015)
[ | | IF: 10.4 ]

673
S. Müller, H. von Wenckstern, F. Schmidt, D. Splith, F.-L. Schein, H. Frenzel, M. Grundmann
Comparison of Schottky contacts on β-gallium oxide thin films and bulk crystals

Appl. Phys. Expr. 8(12), 121102:1-4 (2015)
[ | | IF: 2.567 ]

672
R. Schewski, G. Wagner, M. Baldini, D. Gogova, Z. Galazka, T. Schulz, T. Remmele, T. Markurt, H. von Wenckstern, M. Grundmann, O. Bierwagen, P. Vogt, M. Albrecht
Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001)

Appl. Phys. Expr. 8(1), 011101:1-4 (2015)
[ | | IF: 2.567 ]

671
S. Richter, T. Michalsky, L. Fricke, C. Sturm, H. Franke, M. Grundmann, R. Schmidt-Grund
Maxwell consideration of polaritonic quasi-particle Hamiltonians in multi-level systems

Appl. Phys. Lett. 107(23), 231104:1-5 (2015)
[ | | IF: 3.794 ]

670
V. Lazenka, M. Lorenz, H. Modarresi, M. Bisht, R. Rüffer, M. Bonholzer, M. Grundmann, M.J. Van Bael, A. Vantomme, K. Temst
Magnetic spin structure and magnetoelectric coupling in BiFeO3-BaTiO3 multilayer

Appl. Phys. Lett. 106(8), 082904:1-4 (2015)
[ | | IF: 3.794 ]

669
H. Wei, M. Jenderka, M. Bonholzer, M. Grundmann, M. Lorenz
Modeling the conductivity around the dimensionality-controlled metal-insulator transition in LaNiO3/LaAlO3 (100) superlattices

Appl. Phys. Lett. 106(4), 042103:1-5 (2015)
[ | | IF: 3.794 ]

668
F.J. Klüpfel, H. von Wenckstern, M. Grundmann
Low Frequency Noise of ZnO based MESFETs

Appl. Phys. Lett. 106(3), 033502:1-4 (2015)
[ | | IF: 3.794 ]

667
M. Lorenz, G. Wagner, V. Lazenka, P. Schwinkendorf, H. Modarresi, M.J. Van Bael, A. Vantomme, K. Temst, O. Oeckler, M. Grundmann
Correlation of magnetoelectric coupling in multiferroic BaTiO3-BiFeO3 superlattices with oxygen vacancies and antiphase octahedral rotations

Appl. Phys. Lett. 106(1), 012905:1-5 (2015)
[ | | extra | IF: 3.794 ]

666
C. Sturm, J. Furthmüller, F. Bechstedt, R. Schmidt-Grund, M. Grundmann
Dielectric tensor of monoclinic Ga2O3 single crystals in the spectral range 0.5-8.5 eV

APL Mater. 3, 106106:1-9 (2015)
[ | | IF: 4.323 ]

665
C. Sturm, J. Furthmüller, F. Bechstedt, R. Schmidt-Grund, M. Grundmann
Dielectric tensor of monoclinic Ga2O3 single crystals in the spectral range 0.5-8.5eV

arxiv: 1507.05401 (2015)
[ | link ]

664
V. Zviagin, P. Richter, T. Böntgen, M. Lorenz, M. Ziese, D.R.T. Zahn, G. Salvan, M. Grundmann, R. Schmidt-Grund
Comparative Study of Optical and Magneto-Optical Properties of Normal, Disordered and Inverse Spinel Type Oxides

arxiv: 1505.04664 (2015)
[ | link ]

663
I. Lorite, C. Zandalazini, P. Esquinazi, D. Spemann, S. Friedländer, A. Pöppl, T. Michalsky, M. Grundmann, J. Vogt, J. Meijer, S.P. Heluani, H. Ohldag, W.A. Adeagbo, S.K. Nayak, W. Hergert, A. Ernst, M. Hoffmann
Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires

arxiv: 1504.08230 (2015)
[ | link ]

662
S. Richter, S.G. Ebbinghaus, M. Grundmann, R. Schmidt-Grund
Antiferromagnetic phase transition in the temperature-dependent NIR-VUV dielectric function of hexagonal YMnO3

arxiv: 1503.04043 (2015)
[ | link ]

661
T. Michalsky, H. Franke, C. Sturm, M. Grundmann, R. Schmidt-Grund
Discrete relaxation of exciton-polaritons in an inhomogeneous potential

arxiv: 1501.02644 (2015)
[ | link ]

660
C.P. Dietrich, R. Schmidt-Grund, T. Michalsky, M. Lange, M. Grundmann
Room-temperature condensation in whispering gallery microresonators assisted by longitudinal optical phonons

arxiv: 1501.01255:1-11 (2015)
[ | link ]

659
F.J. Klüpfel, A. Holtz, F.-L. Schein, H. von Wenckstern, M. Grundmann
All-Oxide Inverters Based On ZnO Channel JFETs With Amorphous ZnCo2O4 Gates

IEEE Transact. Electr. Dev. 62(12), 4004-4008 (2015)
[ | | IF: 2.062 ]

658
R. Karsthof, H. von Wenckstern, M. Grundmann
Transparent JFETs Based on p-NiO/n-ZnO Heterojunctions

IEEE Transact. Electr. Dev. 62(12), 3999-4003 (2015)
[ | | IF: 2.062 ]

657
R. Schmidt-Grund, C. Kranert, H. von Wenckstern, V. Zviagin, M. Grundmann
Dielectric function in the spectral range (0.5-8.5)eV of an (AlxGa1-x)2O3 thin film with continuous composition spread

J. Appl. Phys. 117(16), 165307:1-7 (2015)
[ | | IF: 2.21 ]

656
C. Kranert, M. Jenderka, J. Lenzner, M. Lorenz, H. von Wenckstern, R. Schmidt-Grund, M. Grundmann
Lattice parameters and Raman-active phonon modes of β-(AlxGa1-x)2O3

J. Appl. Phys. 117(12), 125703:1-6 (2015)
[ | | IF: 2.21 ]

655
M. Jenderka, R. Schmidt-Grund, M. Grundmann, M. Lorenz
Electronic excitations and structure of Li2IrO3 thin films grown on ZrO2:Y (001) substrates

J. Appl. Phys. 117(2), 025304:1-5 (2015)
[ | link | | IF: 2.21 ]

654
R. Böttcher, M. Lorenz, A. Pöppl, D. Spemann, M. Grundmann
Local zinc blende coordination in heteroepitaxial wurtzite Zn1-xMgxO:Mn thin films with 0.01 ≤ x ≤ 0.04 identified by electron paramagnetic resonance

J. Mater. Chem. C 3, 11918-11929 (2015)
[ | | IF: 7.059 ]

653
I. Lorite, C. Zandalazini, P. Esquinazi, D. Spemann, S. Friedländer, A. Pöppl, T. Michalsky, M. Grundmann, J. Vogt, J. Meijer, S.P. Heluani, H. Ohldag, W.A. Adeagbo, S.K. Nayak, W. Hergert, A. Ernst, M. Hoffmann
Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires

J. Phys.: Condens. Matter 27, 256002:1-6 (2015)
[ | | IF: 2.721 ]

652
C. Kranert, R. Schmidt-Grund, M. Grundmann
Free charge carriers as origin for redshift of LO modes in wurtzite semiconductors excited above the band gap

J. Raman Spectr. 46, 167-170 (2015)
[ | | IF: 2.519 ]

651
A. de Pablos-Martin, M. Ebert, C. Patzig, M. Krause, M. Dyrba, P. Miclea, M. Lorenz, M. Grundmann, Th. Höche
Laser Welding of Sapphire Wafers Using a Thin-Film Fresnoite Glass Solder

Microsyst. Technol. 21(5), 1035-1045 (2015)
[ | | IF: 0.952 ]

650
C.P. Dietrich, R. Johne, T. Michalsky, C. Sturm, P. Eastham, H. Franke, M. Lange, M. Grundmann, R. Schmidt-Grund
Parametric relaxation in whispering-gallery mode exciton-polariton condensates

Phys. Rev. B 91(4), 041202(R):1-6 (2015)
[ | | IF: 3.767 ]

649
A. Mavlonov, S. Richter, H. von Wenckstern, R. Schmidt-Grund, J. Lenzner, M. Lorenz, M. Grundmann
Doping efficiency and limits in (Mg,Zn)O:Al,Ga thin films with two-dimensional lateral composition spread

Phys. Status Solidi A 212(12), 2850-2855 (2015)
[ | | IF: 1.648 ]

648
H. Wei, M. Jenderka, M. Grundmann, M. Lorenz
LaNiO3 films with tunable out-of-plane lattice parameter and their strain-related electrical properties

Phys. Status Solidi A 212(9), 1925-1930 (2015)
[ | | IF: 1.648 ]

647
H. Frenzel, T. Dörfler, P. Schlupp, H. von Wenckstern, M. Grundmann
Long-throw magnetron sputtering of amorphous Zn-Sn-O-thin films at room temperature

Phys. Status Solidi A 212(7), 1482-1486 (2015)
[ | | IF: 1.648 ]

646
M. Lorenz, T. Weiss, F. Schmidt, H. von Wenckstern, M. Grundmann
Aluminium- and gallium-doped homoepitaxial ZnO thin films: Strain-engineering and electrical performance

Phys. Status Solidi A 212(7), 1440-1447 (2015)
[ | | IF: 1.648 ]

645
M. Grundmann
Karl Bädeker (1877-1914) and the discovery of transparent conductive materials

Phys. Status Solidi A 212(7), 1409-1426 (2015)
[ | | extra | IF: 1.648 ]

644
M. Grundmann, A. Rahm, H. von Wenckstern
Transparent Conductive Oxides - Preface
 
Phys. Status Solidi A 212(7), 1408 (1 page) (2015)
[ | | extra | IF: 1.648 ]

643
Special section on Transparent Conductive Oxides
 
Phys. Status Solidi A 212(7), 1407-1498 (2015), Marius Grundmann, Andreas Rahm, Holger von Wenckstern, eds.
[ | | extra | IF: 1.648 ]

642
M. Grundmann
Theory of Semiconductor Solid and Hollow Nano- and Microwires With Hexagonal Cross-Section Under Torsion
 
Phys. Status Solidi B 252, 773-785 (2015)
[ | | extra | IF: 1.522 ]

641
F. Schmidt, D. Splith, S. Müller, H. von Wenckstern, M. Grundmann
Electronic defects in In2O3 and In2O3:Mg thin films on r-plane sapphire

Phys. Status Solidi B 252(10), 2304-2308 (2015)
[ | | IF: 1.522 ]

640
H. von Wenckstern, D. Splith, M. Purfürst, Z. Zhang, C. Kranert, S. Müller, M. Lorenz, M. Grundmann
Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon

Semic. Sci. Technol. 30(2), 024005:1-7 (2015)
[ | | IF: 2.098 ]

639
M. Lorenz, H. Hochmuth, M. Kneiß, M. Bonholzer, M. Jenderka, M. Grundmann
From high-TC superconductors to highly correlated Mott insulators - 25 years of pulsed laser deposition of functional oxides in Leipzig

Semic. Sci. Technol. 30(2), 024003:1-10 (2015)
[ | | IF: 2.098 ]

638
S.F. Fischer, M. Grundmann
Semiconductor Functional Oxides
 
Semic. Sci. Technol. 30(2), 020301:1-2 (2015)
[ | link | | extra | IF: 2.098 ]

637
Special issue on semiconductor functional oxides
 
Semic. Sci. Technol. 30(2) (2015), S.F. Fischer, M. Grundmann, eds.
[ | link | extra | IF: 2.098 ]

636
C. Bundesmann, R. Feder, R. Wunderlich, U. Teschner, M. Grundmann, B. Rauschenbach, H. Neumann
Ion beam sputter deposition of Ge films: Influence of process parameters on film properties

Thin Solid Films 589, 487-492 (2015)
[ | | IF: 1.604 ]

635
S. Puttnins, M.S. Hammer, J. Neerken, I.Riedel, F. Daume, A. Rahm, A.Braun, M. Grundmann, T. Unold
Impact of Sodium on the Device Characteristics of Low Temperature-Deposited CIGSe-Solar Cells

Thin Solid Films 582, 85-90 (2015)
[ | | IF: 1.604 ]

634
M. Grundmann
Bipolar oxide devices - Putting pn-heterostructures to work
 
BuildMoNa Annual Report 2015, p. 26-29 (2015)
[ | link ]

633
D. Poppitz, A. Lotnyk, J.W. Gerlach, J. Lenzner, M. Grundmann, B. Rauschenbach
An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE
Micron 73, 1-8 (2015)
[ | ]

632
Report of The Physics Institutes of Universität Leipzig 2014
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

631
M. Grundmann
The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 2nd edition, reprint
 
(Beijing World Publishing Corporation, Beijing, 2014), ISBN 978-7-5100-7781-4

630
M. Grundmann, R. Karsthof, H. von Wenckstern
Interface Recombination Current in Type II Heterostructure Bipolar Diodes

ACS Appl. Mater. Interfaces 6(17), 14785-14789 (2014)
[ | | IF: 7.504 ]

629
T. Jakubczyk, H. Franke, T. Smolenski, M. Sciesiek, W. Pacuski, A. Golnik, R. Schmidt-Grund, M. Grundmann, C. Kruse, D. Hommel, P. Kossackiy
Inhibition and Enhancement of the Spontaneous Emission of Quantum Dots in Micropillar Cavities with Radial Distributed Bragg Reflectors

ACS Nano 8(10), 9970-9978 (2014)
[ | | IF: 13.334 ]

628
C. Tessarek, R. Röder, T. Michalsky, S. Geburt, H. Franke, R. Schmidt-Grund, M. Heilmann, B. Hoffmann, C. Ronning, M. Grundmann, S. Christiansen
Improving the optical properties of self-catalyzed GaN microrods towards whispering gallery mode lasing

ACS Photonics 1(10), 990-997 (2014)
[ | | IF: 5.404 ]

627
T. Michalsky, M. Wille, C.P. Dietrich, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann
Phonon-assisted Lasing in ZnO Microwires at Room Temperature

Appl. Phys. Lett. 105(21), 211106:1-4 (2014)
[ | link | | IF: 3.794 ]

626
R. Schmidt-Grund, H. Krauß, C. Kranert, M. Bonholzer, M. Grundmann
Temperature dependence of the dielectric function in the spectral range (0.5-8.5) eV of an In2O3 thin film

Appl. Phys. Lett. 105(11), 111906:1-4 (2014)
[ | | IF: 3.794 ]

625
M. Kneiß, M. Jenderka, K. Brachwitz, M. Lorenz, M. Grundmann
Modeling the electrical transport in epitaxial undoped and Ni-, Cr-, and W-doped TiO2 anatase thin films

Appl. Phys. Lett. 105(6), 062103:1-5 (2014)
[ | | IF: 3.794 ]

624
M. Stölzel, A. Müller, G. Benndorf, M. Lorenz, M. Grundmann, C. Patzig, T. Höche
Determination of the spontaneous polarization of wurtzite (Mg,Zn)O

Appl. Phys. Lett. 104(19), 192102:1-4 (2014)
[ | | IF: 3.794 ]

623
F.-L. Schein, M. Winter, T. Böntgen, H. von Wenckstern, M. Grundmann
Highly rectifying p-ZnCo2O4/n-ZnO heterojunction diodes

Appl. Phys. Lett. 104(2), 022104:1-4 (2014)
[ | | IF: 3.794 ]

622
H. von Wenckstern, D. Splith, F. Schmidt, M. Grundmann, O. Bierwagen, J.S. Speck
Schottky contacts to In2O3

APL Mater. 2, 046104:1-7 (2014)
[ | | IF: 4.323 ]

621
M. Thunert, A. Janot, H. Franke, C. Sturm, T. Michalsky, M.D. Martín, L. Viña, B. Rosenow, M. Grundmann, R. Schmidt-Grund
Cavity Polariton Condensate in a Disordered Environment

arxiv: 1412.8667:1-12 (2014)
[ | link ]

620
T. Michalsky, M. Wille, C.P. Dietrich, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann
Phonon-Assisted Lasing in ZnO Microwires at Room Temperature

arxiv: 1410.7970 (2014)
[ | link ]

619
M. Jenderka, R. Schmidt-Grund, M. Grundmann, M. Lorenz
Electronic excitations and structure of Li2IrO3 thin films grown on ZrO2:Y (001) substrates

arxiv: 1407.3596 (2014)
[ | link ]

618
Z. Zhang, H. von Wenckstern, M. Grundmann
Monolithic multichannel ultraviolet photodiodes based on (Mg,Zn)O thin films with continuous composition spreads

IEEE J. Sel. Top. Quantum Electr. 20(6), 3801606:1-6 (2014)
[ | | IF: 4.078 ]

617
S. Müller, H. von Wenckstern, F. Schmidt, D. Splith, R. Heinold, M. Allen, M. Grundmann
Method of choice for fabrication of high-quality ZnO-based Schottky diodes

J. Appl. Phys. 116(19), 194506:1-12 (2014)
[ | | IF: 2.21 ]

616
F. Schmidt, S. Müller, H. von Wenckstern, G. Benndorf, R. Pickenhain, M. Grundmann
Impact of strain on defects in (Mg,Zn)O thin films

J. Appl. Phys. 116(10), 103703:1-9 (2014)
[ | | IF: 2.21 ]

615
R. Schmidt-Grund, C. Kranert, T. Böntgen, H. von Wenckstern, H. Krauß, M. Grundmann
Dielectric function in the NIR-VUV spectral range of (InxGa1-x)2O3 thin films

J. Appl. Phys. 116(5), 053510:1-7 (2014)
[ | | IF: 2.21 ]

614
C. Kranert, J. Lenzner, M. Jenderka, M. Lorenz, H. von Wenckstern, R. Schmidt-Grund, M. Grundmann
Lattice parameters and Raman-active phonon modes of (InxGa1-x)2O3 for x < 0.4

J. Appl. Phys. 116(1), 013505:1-7 (2014)
[ | | IF: 2.21 ]

613
S. Acharya, S. Chouthe, H. Graener, T. Böntgen, C. Sturm, R. Schmidt-Grund, M. Grundmann, G. Seifert
Ultrafast dynamics of the dielectric functions of ZnO and BaTiO3 thin films after intense femtosecond laser excitation

J. Appl. Phys. 115(5), 053508:1-9 (2014)
[ | | IF: 2.21 ]

612
R. Böttcher, A. Pöppl, M. Lorenz, S. Friedländer, D. Spemann, M. Grundmann
55Mn Pulsed ENDOR Spectroscopy of Mn2+ Ions in ZnO Thin Films and Single Crystal

J. Magn. Res. 245, 79-86 (2014)
[ | | IF: 2.3 ]

611
M. Lorenz, R. Böttcher, S. Friedländer, A. Pöppl, D. Spemann, M. Grundmann
Local lattice distortions in oxygen deficient Mn-doped ZnO thin films, probed by electron paramagnetic resonance

J. Mater. Chem. C 2, 4947-4956 (2014)
[ | | IF: 7.059 ]

610
M. Lorenz, V. Lazenka, P. Schwinkendorf, F. Bern, M. Ziese, H. Modarresi, A. Volodin, M. van Bael, K. Temst, A. Vantomme, M. Grundmann
Multiferroic BaTiO3-BiFeO3 composite thin films and multilayers: Strain engineering and magnetoelectric coupling

J. Phys. D: Appl. Phys. 47(13), 135303:1-10 (2014)
[ | | IF: 2.772 ]

609
M. Lorenz, A. de Pablos-Martin, C. Patzig, M. Stölzel, K. Brachwitz, H. Hochmuth, M. Grundmann, T. Höche
Highly textured fresnoite thin films synthesized by pulsed laser deposition with CO2 laser direct heating
 
J. Phys. D: Appl. Phys. 47(3), 034013:1-9 (2014)
[ | | extra | IF: 2.772 ]

608
F. Schmidt, P. Schlupp, S. Müller, C.P. Dietrich, H. von Wenckstern, M. Grundmann, R. Heinhold, H.-S. Kim, M.W. Allen
A DLTS study of ZnO microwire, thin film and bulk material

Proc. Mat. Res. Soc. 1633, 51-54 (2014)
[ | ]

607
H. von Wenckstern, Z. Zhang, J. Lenzner, F. Schmidt, M. Grundmann
A continuous composition spread approach towards monolithic, wavelength-selective multichannel UV-photo-detector arrays

Proc. Mat. Res. Soc. 1633, 123-129 (2014)
[ | ]

606
P. Schlupp, H. von Wenckstern, M. Grundmann
Amorphous zinc-tin oxide thin films fabricated by pulsed laser deposition at room temperature

Proc. Mat. Res. Soc. 1633, 101-104 (2014)
[ | ]

605
J.L. Cholula-Díaz, J. Barzola-Quiquia, H. Krautscheid, C. Kranert, T. Michalsky, P. Esquinazi, M. Grundmann
Conducting behavior of chalcopyrite-type CuGaS2 crystals under visible light

Phys. Chem. Chem. Phys. 16, 21860-21866 (2014)
[ | | IF: 4.198 ]

604
D. Splith, S. Müller, F. Schmidt, H. von Wenckstern, J.J. van Rensburg, W.E. Meyer, M. Grundmann
Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition

Phys. Status Solidi A 211(1), 40-47 (2014)
[ | | IF: 1.648 ]

603
S. Müller, H. von Wenckstern, D. Splith, F. Schmidt, M. Grundmann
Control of the conductivity of Si-doped β-Ga2O3 thin films via growth temperature and pressure

Phys. Status Solidi A 211(1), 34-39 (2014)
[ | | IF: 1.648 ]

602
M. Bonholzer, M. Lorenz, M. Grundmann
Layer-by-layer growth of TiN by pulsed laser deposition on in-situ annealed (100) MgO substrates

Phys. Status Solidi A 211(11), 2621-2624 (2014)
[ | | IF: 1.648 ]

601
P. Schwinkendorf, M. Lorenz, H. Hochmuth, Z. Zhang, M. Grundmann
Interface charging effects in ferroelectric ZnO-BaTiO3 field-effect transistor heterostructures

Phys. Status Solidi A 211(1), 166-172 (2014)
[ | | IF: 1.648 ]

600
F. Schmidt, S. Müller, R. Pickenhain, H. von Wenckstern, S. Geburt, C. Ronning, M. Grundmann
Defect studies on Ar-implanted ZnO thin films

Phys. Status Solidi B 251(5), 937-941 (2014)
[ | | IF: 1.522 ]

599
M. Grundmann, M. Scheibe, M. Lorenz, J. Bläsing, A. Krost
X-ray multiple diffraction of ZnO substrates and heteroepitaxial thin films

Phys. Status Solidi B 251(4), 850-863 (2014)
[ | | IF: 1.522 ]

598
C. Kranert, R. Schmidt-Grund, M. Grundmann
Raman active phonon modes of cubic In2O3

Phys. Status Solidi RRL 8(6), 554-559 (2014)
[ | | IF: 2.58 ]

597
R. Schmidt-Grund, S. Richter, S.G. Ebbinghaus, M. Lorenz, C. Bundesmann, M. Grundmann
Electronic transitions and dielectric function tensor of a YMnO3 single crystal in the NIR

RSC Adv. 4(63), 33549-33554 (2014)
[ | | IF: 2.562 ]

596
S. Puttnins, S. Jander, A. Wehrmann, G. Benndorf, M. Stölzel, A. Müller, H. von Wenckstern, F. Daume, A. Rahm, M. Grundmann
Breakdown characteristics of flexible Cu(In,Ga)Se2 solar cells

Sol. Energy Mat. Sol. Cells 120(Part B), 506-511 (2014)
[ | | IF: 4.63 ]

595
F. Schmidt, H. von Wenckstern, O. Breitenstein, R. Pickenhain, M. Grundmann
Low Rate Deep Level Transient Spectroscopy: A powerful tool for defect characterization in wide bandgap semiconductors

Sol. St. Electr. 92, 40-46 (2014)
[ | | IF: 1.482 ]

594
L. Fricke, T. Böntgen, J. Lorbeer, C. Bundesmann, R. Schmidt-Grund, M. Grundmann
An extended Drude model for the in-situ spectroscopic ellipsometry analysis of ZnO thin layers and surface modifications

Thin Solid Films 571(3), 437-441 (2014)
[ | | IF: 1.604 ]

593
M. Grundmann, F.-L. Schein, R. Karsthof, P. Schlupp, H. von Wenckstern
Several Approaches to Bipolar Oxide Diodes With High Rectification
Adv. Sci. Technol. 93, 252-259 (2014)
[ | ]

592
M. Grundmann
Amorphous semiconductor diodes - A new paradigm
 
BuildMoNa Annual Report 2014, p. 28-31 (2014)
[ | link ]

591
Report of The Physics Institutes of Universität Leipzig 2013
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

590
C.P. Dietrich, M. Grundmann
Pulsed-laser deposition growth of ZnO NWs
 
Wide Band Gap Semiconductor Nanowires: Low-Dimensionality Effects and Growth, Vincent Consonni, Guy Feuillet eds., p. 303-323 (2014) (Wiley-ISTE, 2014), ISBN 978-1-84821-597-9
[ | link | ]

589
M. Lorenz, M. Lange, C. Kranert, C.P. Dietrich, M. Grundmann
Optical properties of and optical devices from ZnO-based nanostructures
 
Zinc Oxide Nanostructures: Advances and Applications, p. 43-99 (2014), M. Willander, ed. (Pan Stanford Publishing, Singapore, 2014), ISBN 9789814411332
[ | link | | extra ]

588
Z. Zhang, H. von Wenckstern, M. Grundmann
Energy-selective multichannel ultraviolet photodiodes based on (Mg,Zn)O

Appl. Phys. Lett. 103(17), 171111:1-4 (2013)
[ | | IF: 3.794 ]

587
F. Schmidt, S. Müller, H. von Wenckstern, C.P. Dietrich, R. Heinhold, M.W. Allen, M. Grundmann
Comparative Study of Deep Defects in ZnO Microwires, Thin Films and Bulk Single Crystals

Appl. Phys. Lett. 103(6), 062102:1-4 (2013)
[ | | IF: 3.794 ]

586
K. Brachwitz, T. Böntgen, M. Lorenz, M. Grundmann
On the transition point of thermally activated conduction of spinel-type MFe2O4 ferrite thin films (M=Zn,Co,Ni)

Appl. Phys. Lett. 102(17), 172104:1-4 (2013)
[ | | IF: 3.794 ]

585
F.-L. Schein, H. von Wenckstern, M. Grundmann
Transparent p-CuI/n-ZnO heterojunction diodes

Appl. Phys. Lett. 102(9), 092109:1-4 (2013)
[ | | IF: 3.794 ]

584
M. Jenderka, J. Barzola-Quiquia, Z. Zhang, H. Frenzel, M. Grundmann, M. Lorenz
Mott Variable Range Hopping and Weak Antilocalization Effect in Heteroepitaxial Na2IrO3 Thin Films

arxiv: 1303.5245 (2013)
[ | link ]

583
H. von Wenckstern, Z. Zhang, F. Schmidt, J. Lenzner, H. Hochmuth, M. Grundmann
Continuous composition spread using pulsed-laser deposition with a single, segmented target

CrystEngComm 15, 10020-10027 (2013)
[ | | IF: 3.879 ]

582
F.J. Klüpfel, F.-L. Schein, M. Lorenz, H. Frenzel, H. von Wenckstern, M. Grundmann
Comparison of ZnO-based JFET, MESFET, and MISFET

IEEE Transact. Electr. Dev. 60(6), 1828-1833 (2013)
[ | | IF: 2.062 ]

581
R. Schmidt-Grund, T. Lühmann, T. Böntgen, H. Franke, D. Opper, M. Lorenz, M. Grundmann
Temperature dependent dielectric function in the NIR-VUV spectral range of alumina and yttria stabilized zirconia thin films

J. Appl. Phys. 114(22), 223509:1-8 (2013)
[ | | IF: 2.21 ]

580
T. Böntgen, K. Brachwitz, R. Schmidt-Grund, M. Lorenz, M. Grundmann
Vacuum ultraviolett dielectric function of ZnFe2O4 thin films

J. Appl. Phys. 113(7), 073503:1-4 (2013)
[ | | IF: 2.21 ]

579
A. Lajn, H. von Wenckstern, M. Grundmann, G. Wagner, P. Barquinha, E. Fortunato, R. Martins
Comparative study of transparent rectifying contacts on semiconducting oxide single crystals and amorphous thin films

J. Appl. Phys. 113(4), 044511:1-13 (2013)
[ | | IF: 2.21 ]

578
J. Zippel, M. Lorenz, M. Lange, M. Stölzel, G. Benndorf, M. Grundmann
Growth control of nonpolar and polar ZnO/MgxZn1-xO quantum wells by pulsed-laser deposition

J. Cryst. Growth 364, 81-87 (2013)
[ | | IF: 1.552 ]

577
M. Lange, C.P. Dietrich, M. Lorenz, M. Grundmann
Excitonic and Optical Confinement in Microwire Heterostructures with Non-Polar (Zn,Cd)O/(Mg,Zn)O Multiple Quantum Wells

J. Phys. Chem. C 117(17), 9020-9024 (2013)
[ | | IF: 4.814 ]

576
J. Zippel, M. Lorenz, A. Setzer, M. Rothermel, D. Spemann, P. Esquinazi, M. Grundmann, G. Wagner, R. Denecke, A.A. Timopheev
Defect-induced magnetism in homoepitaxial manganese stabilized zirconia thin films

J. Phys. D: Appl. Phys. 46(27), 275002:1-10 (2013)
[ | | IF: 2.772 ]

575
V.V. Lazenka, M. Lorenz, H. Modarresi, K. Brachwitz, P. Schwinkendorf, T. Böntgen, J. Vanacken, M. Ziese, M. Grundmann, V.V. Moshchalkov
Effect of rare-earth ion doping on multiferroic properties of BiFeO3 thin films grown epitaxially on SrTiO3(100)

J. Phys. D: Appl. Phys. 46(17), 175006:1-9 (2013)
[ | | IF: 2.772 ]

574
M. Lorenz, C. Schmidt, G. Benndorf, T. Böntgen, H. Hochmuth, R. Böttcher, A. Pöppl, D. Spemann, M. Grundmann
Degenerate interface layers in epitaxial scandium-doped ZnO thin films

J. Phys. D: Appl. Phys. 46(6), 065311:1-10 (2013)
[ | | IF: 2.772 ]

573
F. Daume, S. Puttnins, C. Scheit, H. Zachmann, A. Rahm, A. Braun, M. Grundmann
Damp heat treatment of Cu(In,Ga)Se2 solar cells with different sodium content

Materials 6, 5478-5489 (2013)
[ | | IF: 2.247 ]

572
M. Lorenz, M. Grundmann, S. Wickert, R. Denecke
Oxidation state of tungsten oxide thin films used as gate dielectric for zinc oxide based transistors

Proc. Mat. Res. Soc. 1494, 1649:1-4 (2013)
[ | ]

571
C. Kranert, R. Schmidt-Grund, M. Grundmann
Surface- and point-defect-related Raman scattering in wurtzite semiconductors excited above the band gap

New J. Phys. 15(11), 113048:1-22 (2013)
[ | | IF: 4.063 ]

570
J. Zippel, M. Lorenz, G. Wagner, J. Lenzner, M. Grundmann
Martensitic phase transition and subsequent surface corrugation in manganese stabilized zirconia thin films

Phil. Mag. 93(18), 2329-2339 (2013)
[ | | IF: 1.596 ]

569
M. Stölzel, A. Müller, G. Benndorf, M. Brandt, M. Lorenz, M. Grundmann
Determination of unscreened exciton states in polar ZnO/(Mg,Zn)O quantum wells with strong quantum-confined Stark effect

Phys. Rev. B 88(4), 045315:1-6 (2013)
[ | | IF: 3.767 ]

568
M. Jenderka, J. Barzola-Quiquia, Z. Zhang, H. Frenzel, M. Grundmann, M. Lorenz
Mott variable range hopping and weak antilocalization effect in heteroepitaxial Na2IrO3 thin films

Phys. Rev. B 88(4), 045111:1-6 (2013)
[ | link | | IF: 3.767 ]

567
A. Müller, M. Grundmann
Tunneling dynamics of excitons in random semiconductor alloys

Phys. Rev. B 87(3), 035134:1-5 (2013)
[ | | IF: 3.767 ]

566
M. Grundmann, F.-L. Schein, M. Lorenz, T. Böntgen, J. Lenzner, H. von Wenckstern
Cuprous Iodide - a p-type transparent semiconductor: history and novel applications
 
Phys. Status Solidi A 210(9), 1671-1703 (2013)
[ | | extra | IF: 1.648 ]

565
H. Frenzel, A. Lajn, M. Grundmann
One decade of fully transparent oxide thin film transistors: fabrication, performance and stability
 
Phys. Status Solidi RRL 7(9), 605-615 (2013)
[ | | extra | IF: 2.58 ]

564
S. Puttnins, S. Levcenco, K. Schwarzburg, G. Benndorf, F. Daume, A. Rahm, A. Braun, M. Grundmann, T. Unold
Effect of Sodium on Material and Device Quality in Low Temperature Deposited Cu(In,Ga)Se2

Sol. Energy Mat. Sol. Cells 119, 281-286 (2013)
[ | | IF: 4.63 ]

563
A.A. Timopheev, A.M. Azevedo, N.A. Sobolev, K. Brachwitz, M. Lorenz, M. Ziese, P. Esquinazi, M. Grundmann
Magnetic anisotropy of epitaxial zinc ferrite thin films grown by pulsed laser deposition

Thin Solid Films 527, 273-277 (2013)
[ | | IF: 1.604 ]

562
M. Grundmann
Transparent semiconductors - from materials growth to devices
 
BuildMoNa Annual Report 2013, p. 29-33 (2013)
[ | link ]

561
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern
TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE
CA 2765981 C (Canadian Intellectual Property Office, 2013)
[ | link ]

560
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern
Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu ihrer Herstellung und Verwendung
 
EP 2 446 484 B1 (European Patent Office, Munich, 2013)
[ | link ]

559
M. Lorenz, M. Ziese, G. Wagner, P. Esquinazi, M. Grundmann
Exchange bias and magnetoelectric coupling effects in ZnFe2O4-BaTiO3 composite thin films
 
Ext. Abstracts of the Nature Conference "Frontiers in Electronic Materials", Aachen, Germany (Nanosession: Multiferroic Thin Films and Heterostructures), J. Heber, D. Schlomm, Y. Tokura, R. Waser, M. Wuttig, eds., p. 334 (1 page) (2013)
[ | | extra ]

558
S. Puttnins, H. Kempa, S. Englisch, R. Karsthof, F. Daume, A. Rahm, A. Braun, M. Grundmann
Voltage Dependent Photocurrent in Low-Temperature Deposited CIGSe Solar Cells
Proc. 28th European Photovoltaic Solar Energy Conference and Exhibition, p. 2438-2442 (2013)
[ | ]

557
F. Daume, A. Rahm, A. Braun, M. Grundmann
Sodium in the Degradation Process of Cu(In,Ga)Se2 Solar Cells
Proc. 28th European Photovoltaic Solar Energy Conference and Exhibition, p. 2192-2198 (2013)
[ | ]

556
Report of The Physics Institutes of Universität Leipzig 2012
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

555
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern
TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE
US 8,445,904 B2 (United States Patent, 2013)
[ | link ]

554
M. Lorenz, A. Reinhardt, H. von Wenckstern, M. Grundmann
Design rules of (Mg,Zn)O-based thin-film transistors with high-κ WO3 dielectric gates

Appl. Phys. Lett. 101(18), 183502:1-4 (2012)
[ | | IF: 3.794 ]

553
C.P. Dietrich, M. Lange, T. Böntgen, M. Grundmann
The corner effect in hexagonal whispering gallery microresonators

Appl. Phys. Lett. 101(14), 141116:1-5 (2012)
[ | | IF: 3.794 ]

552
R. Heinhold, H.-S. Kim, F. Schmidt, H. von Wenckstern, M. Grundmann, R.J. Mendelsberg, R.J. Reeves, S.M. Durbin, M.W. Allen
Optical and defect properties of hydrothermal ZnO with low lithium contamination

Appl. Phys. Lett. 101(6), 062105:1-4 (2012)
[ | | IF: 3.794 ]

551
F. Schmidt, H. von Wenckstern, D. Spemann, M. Grundmann
On the radiation hardness of (Mg,Zn)O PLD thin films

Appl. Phys. Lett. 101(1), 012103:1-4 (2012)
[ | | IF: 3.794 ]

550
C.P. Dietrich, M. Lange, M. Stölzel, M. Grundmann
Microwire (Mg,Zn)O/ZnO and (Mg,Zn)O/(Cd,Zn)O non-polar quantum well heterostructures for cavity applications

Appl. Phys. Lett. 100(3), 031110:1-4 (2012)
[ | | IF: 3.794 ]

549
M. Lorenz, M. Ziese, G. Wagner, J. Lenzner, C. Kranert, K. Brachwitz, H. Hochmuth, P. Esquinazi, M. Grundmann
Exchange bias and magnetoelectric coupling effects in ZnFe2O4-BaTiO3 composite thin films

CrystEngComm 14, 6477-6486 (2012)
[ | link | | IF: 3.879 ]

548
S. Müller, H. von Wenckstern, O. Breitenstein, J. Lenzner, M. Grundmann
Microscopic identification of hot spots in multi-barrier Schottky contacts on pulsed laser deposition grown zinc oxide thin films

IEEE Transact. Electr. Dev. 59(3), 536-541 (2012)
[ | | IF: 2.062 ]

547
F.-L. Schein, H. von Wenckstern, H. Frenzel, M. Grundmann
ZnO-based n-channel junction field-effect transistor with room-temperature fabricated p-type ZnCo2O4-gate

IEEE Electron Device Letters 33(5), 676-678 (2012)
[ | | IF: 2.789 ]

546
M. Lange, C.P. Dietrich, K. Brachwitz, T. Böntgen, M. Lorenz, M. Grundmann
(Zn,Cd)O thin films for the application in heterostructures: structural and optical properties

J. Appl. Phys. 112(10), 103517:1-6 (2012)
[ | | IF: 2.21 ]

545
M. Stölzel, J. Kupper, M. Brandt, A. Müller, G. Benndorf, M. Lorenz, M. Grundmann
Electronic and optical properties of ZnO/(Mg,Zn)O quantum wells with and without a distinct QCSE

J. Appl. Phys. 111(6), 063701:1-10 (2012)
[ | | IF: 2.21 ]

544
M. Noltemeyer, F. Bertram, Th. Hempel, B. Bastek, A. Polyakov, J. Christen, M. Brandt, M. Lorenz, M. Grundmann
Excitonic Transport in ZnO

J. Mat. Res. 27(17), 2225-2231 (2012)
[ | | IF: 1.713 ]

543
S. Durbin, T. Veal, M. Grundmann, J. Phillips
Focus Issue on Oxide Semiconductors, Introduction
 
J. Mat. Res. 27(17), 2179 (1 page) (2012) (Materials Research Society, Warrendale, PA, 2012)
[ | | extra | IF: 1.713 ]

542
Focus Issue on Oxide Semiconductors
 
J. Mat. Res. 27(17) (2012), Steve Durbin, Tim Veal, Marius Grundmann, Jamie Phillips, eds. (Materials Research Society, Warrendale, PA, 2012)
[ | extra | IF: 1.713 ]

541
H. Franke, C. Sturm, R. Schmidt-Grund, G. Wagner, M. Grundmann
Ballistic propagation of exciton-polariton condensates in a ZnO-based microcavity

New J. Phys. 14(1), 013037:1-12 (2012)
[ | | IF: 4.063 ]

540
M. Lange, J. Kupper, C.P. Dietrich, M. Brandt, M. Stölzel, G. Benndorf, M. Lorenz, M. Grundmann
Exciton localization and phonon sidebands in polar ZnO/MgZnO quantum wells

Phys. Rev. B 86(4), 045318:1-7 (2012)
[ | | IF: 3.767 ]

539
M. Grundmann, C.P. Dietrich
Whispering gallery modes in deformed hexagonal resonators
 
Phys. Status Solidi B 249(5), 871-879 (2012)
[ | | extra | IF: 1.522 ]

538
M. Brandt, M. Bonholzer, M. Stölzel, G. Benndorf, D. Spemann, M. Lorenz, M. Grundmann
Electrical transport in strained MgxZn1-xO:P thin films grown by pulsed laser deposition on ZnO (000-1)

Phys. Status Solidi B 249(1), 82-90 (2012)
[ | | IF: 1.522 ]

537
M. Schmidt, M. Ellguth, R. Karsthof, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, F.C.C. Ling
On the T2 trap in zinc oxide thin films

Phys. Status Solidi B 249(3), 588-595 (2012)
[ | | IF: 1.522 ]

536
J. Zippel, M. Lorenz, G. Benndorf, M. Grundmann
Persistent layer-by-layer growth for pulsed-laser homoepitaxy of (000-1) ZnO

Phys. Status Solidi RRL 6(11), 433-435 (2012)
[ | | IF: 2.58 ]

535
M. Lange, C.P. Dietrich, K. Brachwitz, M. Stölzel, M. Lorenz, M. Grundmann
Visible emission from ZnCdO/ZnO multiple quantum wells

Phys. Status Solidi RRL 6(1), 31-33 (2012)
[ | | IF: 2.58 ]

534
M. Noltemeyer, F. Bertram, T. Hempel, B. Bastek, J. Christen, M. Brandt, M. Lorenz, M. Grundmann
Excitonic transport in ZnO

Proc. SPIE 8263, 82630X:1-7 (2012)
[ | ]

533
M. Schmidt, H. von Wenckstern, R. Pickenhain, M. Grundmann
On the investigation of electronic defect states in ZnO thin films by space charge spectroscopy with optical excitation

Sol. St. Electr. 75, 48-54 (2012)
[ | | IF: 1.482 ]

532
J.P. Richters, J. Kalden, M. Gnauck, C. Ronning, C.P. Dietrich, H. von Wenckstern, M. Grundmann, J. Gutowski, T. Voss
Modal gain and its diameter dependence in single ZnO micro- and nanowires

Semic. Sci. Technol. 27(1), 015005:1-5 (2012)
[ | | IF: 2.098 ]

531
M. Grundmann
Quantum optics and round corners in Leipzig
 
BuildMoNa Annual Report 2012, p. 33-37 (2012)
[ | link ]

530
H. von Wenckstern, R. Schmidt-Grund, C. Bundesmann, A. Müller, C.P. Dietrich, M. Stölzel, M. Lange, M. Grundmann
The (Mg,Zn)O Alloy
 
Handbook of Zinc Oxide and Related Materials, Vol. 1 Materials, p. 257-320 (2012), Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855706
[ | link | | extra ]

529
H. Frenzel, M. Lorenz, F.-L. Schein, A. Lajn, F.J. Klüpfel, T. Diez, H. von Wenckstern, M. Grundmann
Metal-semiconductor field-effect transistors and integrated circuits based on ZnO and related oxides
 
Handbook of Zinc Oxide and Related Materials, Vol. 2 Devices and Nano-Engineering, p. 369-434 (2012), Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855744
[ | link | | extra ]

528
S. Puttnins, M. Purfürst, M. Hartung, H.-K. Lee, F. Daume, L. Hartmann, A. Rahm, A. Braun, M. Grundmann
The Influence of Sodium on CIGSe Solar Cell Breakdown Characteristics
Proc. 27th European Photovoltaic Solar Energy Conference and Exhibition, p. 2219-2221 (2012)
[ | ]

527
Report of The Physics Institutes of Universität Leipzig 2011
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

526
M. Lorenz, H. von Wenckstern, M. Grundmann
Tungsten oxide as gate dielectric for highly transparent and temperature-stable zincoxide-based thin-film transistors

Adv. Mater. 23(45), 5383-5386 (2011)
[ | | IF: 18.96 ]

525
C. Kranert, T. Böntgen, R. Schmidt‐Grund, M. Brandt, S. Schöche, C. Sturm, H. Hochmuth, M. Lorenz, M. Grundmann
Structural properties of BaTiO3/ZnO heterostructures and interfaces

AIP Conf. Proc. 1399, 451-452 (2011) (AIP Publishing LLC, New York)
[ | ]

524
C. Sturm, H. Hilmer, R. Schmidt‐Grund, M. Grundmann
Occupation behaviour of the lower exciton-polariton branch in ZnO-based microresonators

AIP Conf. Proc. 1399, 447-448 (2011) (AIP Publishing LLC, New York)
[ | ]

523
C.P. Dietrich, M. Grundmann
Comment on "Exciton-polariton microphotoluminescence and lasing from ZnO whispering-gallery mode microcavities" [Appl. Phys. Lett. 98, 161110 (2011)]

Appl. Phys. Lett. 99(13), 136101 (1 page) (2011)
[ | link | | extra | IF: 3.794 ]

522
Zh. Zhang, H. von Wenckstern, M. Schmidt, M. Grundmann
Wavelength selective metal-semiconductor-metal photodetectors based on (Mg,Zn)O-heterostructures

Appl. Phys. Lett. 99(8), 083502:1-3 (2011)
[ | | IF: 3.794 ]

521
C.P. Dietrich, M. Lange, F.J. Klüpfel, H. von Wenckstern, R. Schmidt-Grund, M. Grundmann
Strain distribution in bent ZnO microwires

Appl. Phys. Lett. 98(3), 031105:1-3 (2011)
[ | link | | IF: 3.794 ]

520
M. Bachmann, K. Goede, A.G. Beck-Sickinger, M. Grundmann, A. Irbäck, W. Janke
Microscopic Mechanism of Specific Peptide Adhesion to Semiconductor Substrates

arxiv: 1107.1208 (2011)
[ | link ]

519
A. Müller, M. Lorenz, K. Brachwitz, J. Lenzner, K. Mittwoch, W. Skorupa, M. Grundmann, T. Höche
Fresnoite Thin Films grown by Pulsed Laser Deposition: Photoluminescence and Laser Crystallization
 
CrystEngComm 13(21), 6377-6385 (2011)
[ | | extra | IF: 3.879 ]

518
A. Lajn, T. Diez, F. Schein, H. Frenzel, H. von Wenckstern, M. Grundmann
Light and temperature stability of fully transparent ZnO-based inverter circuits

IEEE Electron Device Letters 32(4), 515-517 (2011)
[ | | IF: 2.789 ]

517
J. Zippel, M. Lorenz, J. Lenzner, M. Grundmann, T. Hammer, A. Jacquot, H. Böttner
Electrical transport and optical emission of MnxZr1-xO2 (0<x<0.5) thin films

J. Appl. Phys. 110(4), 043706:1-6 (2011)
[ | | IF: 2.21 ]

516
C.C. Dey, S. Dey, S.C. Bedi, S.K. Das, M. Lorenz, M. Grundmann, J. Vogt, T. Butz
Hafnium Oxide Thin Films Studied by Time Differential Perturbed Angular Correlations

J. Appl. Phys. 109(11), 113918:1-6 (2011)
[ | | IF: 2.21 ]

515
F.J. Klüpfel, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann
Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors

J. Appl. Phys. 109(7), 074515:1-4 (2011)
[ | | IF: 2.21 ]

514
C.P. Dietrich, M. Brandt, M. Lange, J. Kupper, T. Böntgen, H. von Wenckstern, M. Grundmann
Defect properties of ZnO and ZnO:P microwires

J. Appl. Phys. 109(1), 013712:1-5 (2011)
[ | | IF: 2.21 ]

513
M. Lange, C.P. Dietrich, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, M. Grundmann
Thermal stability of ZnO/ZnCdO/ZnO double heterostructures grown by pulsed laser deposition

J. Cryst. Growth 328(1), 13-17 (2011)
[ | | IF: 1.552 ]

512
A. Lajn, M. Schmidt, H. von Wenckstern, M. Grundmann
Erratum: Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO

J. Electr. Mat. 40(4), 477 (1 page) (2011)
[ | | IF: 1.635 ]

511
A. Lajn, M. Schmidt, H. von Wenckstern, M. Grundmann
Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO

J. Electr. Mat. 40, 473-476 (2011)
[ | | IF: 1.635 ]

510
M. Lange, C.P. Dietrich, J. Zúñiga-Pérez, H. von Wenckstern, M. Lorenz, M. Grundmann
MgZnO/ZnO quantum well nanowire heterostructures with large confinement energies

J. Vac. Sci. Technol. A 29(3), 03A104:1-5 (2011)
[ | | IF: 1.432 ]

509
C.P. Dietrich, M. Lange, C. Sturm, R. Schmidt-Grund, M. Grundmann
One- and two-dimensional cavity modes in ZnO microwires

New J. Phys. 13(10), 103021:1-9 (2011)
[ | | IF: 4.063 ]

508
C. Sturm, H. Hilmer, R. Schmidt-Grund, M. Grundmann
Exciton-polaritons in a ZnO-based microcavity: polarization dependence and non-linear occupation

New J. Phys. 13(3), 033014:1-17 (2011)
[ | | IF: 4.063 ]

507
C. Sturm, H. Hilmer, B. Rheinländer, R. Schmidt-Grund, M. Grundmann
Cavity-photon dispersion in one-dimensional confined microresonators with an optically anisotropic cavity material

Phys. Rev. B 83(20), 205301:1-12 (2011)
[ | | IF: 3.767 ]

506
M. Ellguth, M. Schmidt, R. Pickenhain, M. Grundmann
Characterization of point defects in ZnO thin films by Optical Deep Level Transient Spectroscopy

Phys. Status Solidi B 248(4), 941-949 (2011)
[ | | IF: 1.522 ]

505
M. Grundmann
Formation of Epitaxial Domains: Unified Theory and Survey of Experimental Results
 
Phys. Status Solidi B 248(4), 805-824 (2011) [Editor's Choice]
[ | link | | extra | IF: 1.522 ]

504
M. Schmidt, K. Brachwitz, F. Schmidt, M. Ellguth, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa
Nickel-related defects in ZnO - A deep-level transient spectroscopy and photo-capacitance study

Phys. Status Solidi B 248(8), 1949-1955 (2011)
[ | | IF: 1.522 ]

503
M. Lorenz, M. Brandt, K. Mexner, K. Brachwitz, M. Ziese, P. Esquinazi, H. Hochmuth, M. Grundmann
Ferrimagnetic ZnFe2O4 thin films on SrTiO3 single crystals with highly tunable electrical conductivity

Phys. Status Solidi RRL 5(12), 438-440 (2011)
[ | | IF: 2.58 ]

502
M. Brandt, H. von Wenckstern, M. Stölzel, H. Hochmuth, M. Lorenz, M. Grundmann
Semiconducting oxide heterostructures

Semic. Sci. Technol. 26(1), 014040:1-9 (2011)
[ | | IF: 2.098 ]

501
T. Böntgen, S. Schöche, R. Schmidt-Grund, C. Sturm, M. Brandt, H. Hochmuth, M. Lorenz, M. Grundmann
Optical properties of BaTiO3/ZnO heterostructures under the effect of an applied bias

Thin Solid Films 519, 2933-2935 (2011)
[ | | IF: 1.604 ]

500
R. Schmidt-Grund, P. Kühne, C. Czekalla, D. Schumacher, C. Sturm, M. Grundmann
Determination of the refractive index of single crystal bulk samples and micro-structures

Thin Solid Films 519, 2777-2781 (2011)
[ | | IF: 1.604 ]

499
T. Höche, M. Lorenz, A. Müller, M. Grundmann, K. Mittwoch
Laser patterning of thin films for luminescence applications
18th European Microelectronics and Packaging Conference (EMPC), p. 1-5 (2011), ISBN 978-1-4673-0694-2
[ | link ]

498
M. Grundmann
Oxide-based novel electronic and photonic building blocks
 
BuildMoNa Annual Report 2011, p. 36-39 (2011)
[ | link ]

497
H. Frenzel, A. Lajn, H. von Wenckstern, M. Grundmann
Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu seiner Herstellung und Verwendung
 
DE 10 2009 030 045 B3 (Deutsches Patent- und Markenamt, München, 2011)
[ | link ]

496
M. Lorenz, H. Hochmuth, C. Grüner, H. Hilmer, A. Lajn, D. Spemann, M. Brandt, J. Zippel, R. Schmidt-Grund, H. von Wenckstern, M. Grundmann
Oxide thin film heterostructures on large area, with flexible doping, low dislocation density and abrupt interfaces - grown by Pulsed Laser Deposition
 
Laser Chemistry 2011, 140976:1-27 (2011) (Hindawi, New York, 2011)
[ | ]

495
F. Daume, C. Scheit, S. Puttnins, A. Rahm, M. Grundmann
Application of Series Resistance Imaging Techniques To Cu(In,Ga)Se2 Solar Cells
Proc. 26th European Photovoltaic Solar Energy Conference and Exhibition, p. 2955-2957 (2011)
[ | ]

494
S. Puttnins, S. Jander, K. Pelz, S. Heinker, F. Daume, A. Rahm, A. Braun, M. Grundmann
The Influence of Front Contact and Buffer Layer Properties on CIGSe Solar Cell Breakdown Characteristics
Prof. 26th European Photovoltaic Solar Energy Conference and Exhibition, p. 2432-2434 (2011)
[ | ]

493
Report of The Physics Institutes of Universität Leipzig 2010
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

492
M. Grundmann
The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 2nd edition
 
(Springer, Heidelberg, 2010), ISBN 978-3-642-13883-6
[ | link | | extra ]

491
M. Grundmann
Nanooptik
(euroforum fachwissen/IIR, 2010)
[ | link ]

490
M. Bachmann, K. Goede, A.G. Beck-Sickinger, M. Grundmann, A. Irbäck, W. Janke
Mikroskopischer Mechanismus der spezifischen Adhäsion von Peptiden an Halbleitersubstraten

Angew. Chemie 122(49), 9721-9724 (2010)
[ | | extra ]

489
M. Bachmann, K. Goede, A.G. Beck-Sickinger, M. Grundmann, A. Irbäck, W. Janke
Microscopic Mechanism of Specific Peptide Adhesion to Semiconductor Substrates

Angew. Chemie Int. Ed. 49(49), 9530-9533 (2010)
[ | | extra | IF: 13.734 ]

488
H. Frenzel, A. Lajn, H. von Wenckstern, M. Lorenz, F. Schein, Zh. Zhang, M. Grundmann
Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and their Application in Transparent Integrated Circuits
 
Adv. Mater. 22(47), 5332-5349 (2010)
[ | | extra | IF: 18.96 ]

487
M. Lorenz, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann, P. Barquinha, R. Martins, E. Fortunato
Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films

Appl. Phys. Lett. 97(24), 243506:1-3 (2010)
[ | | IF: 3.794 ]

486
D. Lausch, K. Petter, R. Bakowskie, C. Czekalla, J. Lenzner, H. von Wenckstern, M. Grundmann
Identification of Pre-Breakdown Mechanism of Silicon Solar Cells at Low Reverse Voltages

Appl. Phys. Lett. 97(7), 073506:1-3 (2010)
[ | | IF: 3.794 ]

485
M. Brandt, M. Lange, M. Stölzel, A. Müller, G. Benndorf, J. Zippel, J. Lenzner, M. Lorenz, M. Grundmann
Control of interface abruptness of polar MgZnO/ZnO quantum wells grown by pulsed laser deposition

Appl. Phys. Lett. 97(5), 052101:1-3 (2010)
[ | | IF: 3.794 ]

484
H. Frenzel, F. Schein, A. Lajn, H. von Wenckstern, M. Grundmann
High-gain integrated inverters based on ZnO MESFET technology

Appl. Phys. Lett. 96(11), 113502:1-3 (2010)
[ | | IF: 3.794 ]

483
H. Frenzel, A. Lajn, H. von Wenckstern, M. Grundmann
Ultrathin gate-contacts for MESFET devices: An alternative approach in transparent electronics

J. Appl. Phys. 107(11), 114515:1-6 (2010)
[ | | IF: 2.21 ]

482
A.O. Ankiewicz, J.S. Martins, M.C. Carmo, M. Grundmann, S. Zhou, H. Schmidt, N.A. Sobolev
Ferromagnetic resonance on metal nanocrystals in Fe and Ni implanted ZnO

J. Appl. Phys. 107(9), 09B518:1-3 (2010)
[ | | IF: 2.21 ]

481
M. Lange, C. Dietrich, C. Czekalla, J. Zippel, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, M. Grundmann
Luminescence Properties of ZnO/Zn1-xCdxO/ZnO double heterostructures

J. Appl. Phys. 107(9), 093530:1-8 (2010)
[ | | IF: 2.21 ]

480
A. Müller, M. Stölzel, G. Benndorf, M. Lorenz, M. Grundmann
Origin of the near-band-edge luminescence in MgxZn1-xO

J. Appl. Phys. 107(1), 013704:1-6 (2010)
[ | | IF: 2.21 ]

479
S. Lautenschlaeger, S. Eisermann, M.N. Hofmann, U. Roemer, M. Pinnisch, A. Laufer, B.K. Meyer, H. von Wenckstern, A. Lajn, F. Schmidt, M. Grundmann, J. Blaesing, A. Krost
Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers

J. Cryst. Growth 312, 2078-2082 (2010)
[ | | IF: 1.552 ]

478
A. Lajn, H. von Wenckstern, G. Benndorf, C.P. Dietrich, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films

J. Electr. Mat. 39, 595-600 (2010)
[ | | IF: 1.635 ]

477
H. von Wenckstern, K. Brachwitz, M. Schmidt, C.P. Dietrich, M. Ellguth, M. Stölzel, M. Lorenz, M. Grundmann
The E3 defect in MgxZn1-xO

J. Electr. Mat. 39, 584-588 (2010)
[ | | IF: 1.635 ]

476
J. Chai, R.J. Mendelsberg, R.J. Reeves, J. Kennedy, H. von Wenckstern, M. Grundmann, K. Doyle, T.H. Meyers, S.M. Durbin
Identification of a deep acceptor level in ZnO due to silver doping

J. Electr. Mat. 39, 577-583 (2010)
[ | | IF: 1.635 ]

475
H. von Wenckstern, S. Müller, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Dielectric passivation of ZnO-based Schottky diodes

J. Electr. Mat. 39, 559-562 (2010)
[ | | IF: 1.635 ]

474
Q.Y. Xu, S.Q. Zhou, D. Bürger, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
Electrical control of magnetoresistance in highly insulating Co-doped ZnO

Jpn. J. Appl. Phys. 49, 043002:1-4 (2010)
[ | | IF: 1.067 ]

473
J. Zippel, S. Heitsch, M. Stölzel, A. Müller, H. von Wenckstern, G. Benndorf, M. Lorenz, H. Hochmuth, M. Grundmann
Optical properties of homo- and heteroepitaxial ZnO/MgxZn1-xO quantum wells grown by pulsed laser deposition

J. Lumin. 130, 520-526 (2010)
[ | | IF: 2.144 ]

472
S. Acharya, S. Chuothe, C. Sturm, H. Graener, R. Schmidt-Grund, M. Grundmann, G. Seifert
Charge carrier dynamics of ZnO and ZnO-BaTiO3 thin films
J. Phys. Conf. Ser. 210, 012048:1-4 (2010)
[ | ]

471
C. Sturm, H. Hilmer, R. Schmidt-Grund, M. Grundmann
Polarization behavior of the exciton-polariton emission of ZnO-based microresonators

Proc. Mat. Res. Soc. 1208E, 1208-O18-08:1-6 (2010)
[ | ]

470
H. von Wenckstern, Z.P. Zhang, M. Lorenz, C. Czekalla, H. Frenzel, A. Lajn, M. Grundmann
Light beam induced current measurements on ZnO Schottky diodes and MESFETs

Proc. Mat. Res. Soc. 1201, 1201-H04-02:1-6 (2010)
[ | ]

469
C.P. Dietrich, A. Müller, M. Stölzel, M. Lange, G. Benndorf, H. von Wenckstern, M. Grundmann
Bound-exciton recombination in MgxZn1-xO thin films

Proc. Mat. Res. Soc. 1201, 1201-H03-08:1-6 (2010)
[ | ]

468
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern, F. Schein, M. Lorenz
ZnO-based MESFET Devices

Proc. Mat. Res. Soc. 1201, 1201-H01-01:1-5 (2010)
[ | ]

467
C.P. Dietrich, M. Lange, G. Benndorf, J. Lenzner, M. Lorenz, M. Grundmann
Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys

New J. Phys. 12(3), 033030:1-10 (2010)
[ | | IF: 4.063 ]

466
M. Mäder, S. Perlt, T. Höche, H. Hilmer, M. Grundmann, B. Rauschenbach
Gold nanostructure matrices by diffraction mask-projection laser ablation: extension to previously inaccessible substrates

Nanotechnology 21, 175304:1-5 (2010)
[ | | IF: 3.842 ]

465
J. Zippel, M. Lorenz, A. Setzer, G. Wagner, N. Sobolev, P. Esquinazi, M. Grundmann
Defect induced ferromagnetism in undoped and Mn-doped zirconia thin films

Phys. Rev. B 82(12), 125209:1-5 (2010)
[ | | IF: 3.767 ]

464
V.M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, H. Schmidt, N. Ianno, M. Schubert
Interface polarization coupling in piezoelectric-semiconductor ferroelectric heterostructures

Phys. Rev. B 81(19), 195307:1-12 (2010)
[ | | IF: 3.767 ]

463
M. Brandt, H. von Wenckstern, G. Benndorf, M. Lange, C.P. Dietrich, C. Kranert, C. Sturm, R. Schmidt-Grund, H. Hochmuth, M. Lorenz, M. Grundmann, M.R. Wagner, M. Alic, C. Nenstiel, A. Hoffmann
Identification of a donor-related recombination channel in ZnO thin films

Phys. Rev. B 81(7), 073306:1-4 (2010)
[ | | IF: 3.767 ]

462
M. Grundmann, T. Böntgen, M. Lorenz
The Occurrence of Rotation Domains in Heteroepitaxy

Phys. Rev. Lett. 105(14), 146102:1-4 (2010)
[ | | IF: 7.645 ]

461
W. Anwand, G. Brauer, T.E. Cowan, V. Heera, H. Schmidt, W. Skorupa, H. von Wenckstern, G. Benndorf, M. Grundmann
Structural characterization of H plasma-doped ZnO single crystals by Hall measurements and photoluminescence studies

Phys. Status Solidi A 207, 2426-2431 (2010)
[ | | IF: 1.648 ]

460
M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, H. von Wenckstern
Transparent Semiconducting Oxides: Materials and Devices
 
Phys. Status Solidi A 207, 1437-1449 (2010)
[ | link | | extra | IF: 1.648 ]

459
J. Zippel, M. Stölzel, A. Müller, G. Benndorf, M. Lorenz, H. Hochmuth, M. Grundmann
Electronic coupling in ZnO/MgxZn1-xO double quantum wells grown by pulsed laser deposition

Phys. Status Solidi B 247, 398-404 (2010)
[ | | IF: 1.522 ]

458
O. Albrecht, R. Zierold, C. Patzig, J. Bachmann, C. Sturm, B. Rheinländer, M. Grundmann, D. Görlitz, B. Rauschenbach, K. Nielsch
Magnetic tubular nanostructures based on glancing-angle deposited templates and atomic layer deposition

Phys. Status Solidi B 247, 1365-1371 (2010)
[ | | IF: 1.522 ]

457
R. Schmidt-Grund, H. Hilmer, A. Hinkel, C. Sturm, B. Rheinländer, V. Gottschalch, M. Lange, J. Zúñiga-Pérez, M. Grundmann
Two-dimensional confined photonic wire resonators - strong light-matter coupling

Phys. Status Solidi B 247, 1351-1364 (2010)
[ | | IF: 1.522 ]

456
R. Kaden, G. Wagner, C. Strum, R. Schmidt-Grund, H. von Wenckstern, A. Prager, K. Bente, M. Grundmann
Synthesis and physical properties of cylindrite micro tubes and lamellae

Phys. Status Solidi B 247, 1335-1350 (2010)
[ | | IF: 1.522 ]

455
C. Czekalla, T. Nobis, A. Rahm, B. Cao, J. Zúñiga-Pérez, C. Sturm, R. Schmidt-Grund, M. Lorenz, M. Grundmann
Whispering gallery modes in ZnO nano- and microwires

Phys. Status Solidi B 247, 1282-1293 (2010)
[ | | IF: 1.522 ]

454
M. Lorenz, A. Rahm, B. Cao, J. Zúñiga-Pérez, E.M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, M. Grundmann
Self-organized growth of ZnO-based nano- and microstructures

Phys. Status Solidi B 247, 1265-1281 (2010)
[ | | IF: 1.522 ]

453
M. Grundmann
Architecture of nano- and microdimensional building blocks

Phys. Status Solidi B 247(6), 1257-1264 (2010)
[ | | IF: 1.522 ]

452
Scientific report of the Forschergruppe 522
 
Phys. Status Solidi B 247(6), 1257-1392 (2010), M. Grundmann, ed.
[ | extra | IF: 1.522 ]

451
M. Schmidt, M. Ellguth, F. Schmidt, Th. Lüder, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa
Defects in a nitrogen-implanted ZnO thin film

Phys. Status Solidi B 247, 1220-1226 (2010)
[ | | IF: 1.522 ]

450
C. Scarlat, K.M. Mok, S. Zhou, M. Vinnichenko, M. Lorenz, M. Grundmann, M. Helm, M. Schubert, H. Schmidt
Voigt effect measurement on PLD grown NiO thin films

Phys. Status Solidi C 7, 334-337 (2010)
[ | ]

449
G. Zimmermann, M. Lange, B. Cao, M. Lorenz, M. Grundmann
Resistivity control of ZnO nanowires by Al-doping

Phys. Status Solidi RRL 4, 82-84 (2010)
[ | | IF: 2.58 ]

448
H. Hilmer, C. Sturm, R. Schmidt-Grund, B. Rheinländer, M. Grundmann
Observation of strong light-matter coupling by spectroscopic ellipsometry

Superlatt. Microstr. 47(1), 19-23 (2010)
[ | | IF: 1.564 ]

447
C.P. Dietrich, M. Lange, G. Benndorf, H. von Wenckstern, M. Grundmann
Donor-acceptor pair recombination in non-stoichiometric ZnO thin films

Sol. St. Comm. 150, 379-382 (2010)
[ | | IF: 1.534 ]

446
M. Lorenz, M. Brandt, M. Lange, G. Benndorf, H. von Wenckstern, D. Klimm, M. Grundmann
Homoepitaxial MgxZn1-xO (0 ≤ x ≤ 0.22) thin films grown by pulsed laser deposition

Thin Solid Films 518, 4623-4629 (2010)
[ | | IF: 1.604 ]

445
M. Grundmann
ZnO-based alloys for nano-scale optoelectronic devices
 
BuildMoNa Annual Report 2010, p. 34-39 (2010)
[ | link ]

444
B. Cao, J. Zúñiga-Pérez, C. Czekalla, H. Hilmer, J. Lenzner, N. Boukos, A. Travlos, M. Lorenz, M. Grundmann
Tuning the lateral density of ZnO nanowire arrays and its application as physical templates for radial nanowire heterostructures
J. Mat. Chem. 20, 3848-3854 (2010)
[ | ]

443
B.Q. Cao, M. Lorenz, G. Zimmermann, C. Czekalla, M. Brandt, H. von Wenckstern, M. Grundmann
p-type Phosphorus Doped ZnO Wires for Optoelectronic Applications
 
Nanowires, p. 117-132 (2010), P. Prete, ed., ISBN 978-953-7619-79-4
[ | | extra ]

442
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern
TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE
PCT Application WO 2010/149616 A1
[ | link ]

441
S. Puttnins, H. Zachmann, A. Rahm, G. Benndorf, M. Grundmann
Quantum Efficiency Analysis of Ion Beam Assisted Deposition of Cu(In,Ga)Se2 Solar Cells on Flexible Substrates
Proc. 25th European Photovoltaic Solar Energy Conference and Exhibition, p. 3369-3371 (2010)
[ | ]

440
Report of The Physics Institutes of Universität Leipzig 2009
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

439
H. Frenzel, M. Lorenz, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Grundmann
ZnO-based metal-semiconductor field-effect transistors on glass substrates

Appl. Phys. Lett. 95(15), 153503:1-3 (2009)
[ | | IF: 3.794 ]

438
M. Voora, T. Hofmann, M. Brandt, M. Lorenz, N. Ashkenov, M. Grundmann, M. Schubert
Electrical properties of ZnO-BaTiO3-ZnO heterostructures with asymmetric interface charge distribution

Appl. Phys. Lett. 95(8), 082902:1-3 (2009)
[ | | IF: 3.794 ]

437
V.M. Voora, T. Hofman, M. Schubert, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov
Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures

Appl. Phys. Lett. 94(14), 142904:1-3 (2009)
[ | | IF: 3.794 ]

436
S. Zhou, K. Potzger, Q. Xu, G. Talut, M. Lorenz, W. Skorupa, M. Helm, J. Fassbender, M. Grundmann, H. Schmidt
Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?

arxiv: 0907.3536 (2009)
[ | link ]

435
H. von Wenckstern, J. Zippel, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Two-dimensional electron gases in MgZnO/ZnO heterostructures

Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 99-100 (2009)
[ | ]

434
H. Frenzel, H. von Wenckstern, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Interface effects in ZnO metal-insulator-semiconductor and metal-semiconductor structures

Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 469-470 (2009)
[ | ]

433
R. Schmidt-Grund, C. Sturm, H. Hilmer, J. Sellmann, C. Czekalla, B. Rheinländer, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann
Exciton-polaritons in ZnO microcavity resonators

Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 175-176 (2009)
[ | ]

432
H. Hilmer, J. Sellmann, Ch. Sturm, R. Schmidt-Grund, B. Rheinländer, H. Hochmuth, J. Lenzner, M. Lorenz, M. Grundmann
PLD Growth of High Reflective All-Oxide Bragg Reflectors for ZnO Resonators

Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 151-152 (2009)
[ | ]

431
H. von Wenckstern, A. Lajn, A. Laufer, B.K. Meyer, H.H.M. Lorenz, M. Grundmann
Ag related defect state in ZnO thin films

Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 122-123 (2009)
[ | ]

430
M.W. Allen, S.M. Durbin, X. Weng, J.M. Redwing, K. Sarpatwari, S.E. Mohney, H. von Wenckstern, M. Grundmann
Temperature Dependent Properties of Nearly Ideal ZnO Schottky Diodes

IEEE Transact. Electr. Dev. 56(9), 2160-2164 (2009)
[ | | IF: 2.062 ]

429
M. Grundmann, C.P. Dietrich
Lineshape Theory of Photoluminescence from Semiconductor Alloys

J. Appl. Phys. 106(12), 123521:1-10 (2009)
[ | | IF: 2.21 ]

428
Q.Y. Xu, S. Zhou, D. Markó, K. Potzger, J. Fassbender, M. Vinnichenko, M. Helm, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
Paramagnetism in Co-doped ZnO films

J. Phys. D: Appl. Phys. 42(8), 085001:1-5 (2009)
[ | | IF: 2.772 ]

427
M. Brandt, H. Frenzel, H. Hochmuth, M. Lorenz, M. Grundmann, J. Schubert
Ferroelectric thin film field-effect transistors based on ZnO/BaTiO3 heterostructures

J. Vac. Sci. Technol. B 27(3), 1789-1793 (2009)
[ | | IF: 1.267 ]

426
C. Czekalla, C. Sturm, R. Schmidt-Grund, B. Cao, J.Z. Pérez, M. Lorenz, M. Grundmann
Optical characterization of zinc oxide microlasers and microwire core-shell heterostructures

J. Vac. Sci. Technol. B 27(3), 1780-1783 (2009)
[ | | IF: 1.267 ]

425
A. Lajn, H. von Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Wickert, C. Vogt, R. Denecke
Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type ZnO

J. Vac. Sci. Technol. B 27(3), 1769-1773 (2009)
[ | | IF: 1.267 ]

424
M. Lange, J. Zippel, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann
Temperature Dependence of Localization Effects of Excitons in ZnO/CdxZn1-xO/ZnO Double Heterostructures

J. Vac. Sci. Technol. B 27(3), 1741-1745 (2009)
[ | | IF: 1.267 ]

423
J. Zippel, J. Lenzner, G. Benndorf, M. Lange, H. Hochmuth, M. Lorenz, M. Grundmann
Electronic coupling in MgxZn1-xO/ZnO double quantum wells

J. Vac. Sci. Technol. B 27(3), 1735-1740 (2009)
[ | | IF: 1.267 ]

422
C. Sturm, H. Hilmer, R. Schmidt-Grund, C. Czekalla, J. Sellmann, J. Lenzner, M. Lorenz, M. Grundmann
Strong exciton-photon coupling in ZnO based resonators

J. Vac. Sci. Technol. B 27, 1726-1730 (2009)
[ | | IF: 1.267 ]

421
M. Lorenz, B. Cao, G. Zimmermann, G. Biehne, C. Czekalla, H. Frenzel, M. Brandt, H. von Wenckstern, M. Grundmann
Stable p-type ZnO:P nanowire/n-type ZnO:Ga film junctions, reproducibly grown by two-step pulsed laser deposition

J. Vac. Sci. Technol. B 27(3), 1693-1697 (2009)
[ | | IF: 1.267 ]

420
M. Brandt, H. von Wenckstern, Ch. Meinecke, T. Butz, H. Hochmuth, M. Lorenz, M. Grundmann
Dopant activation in homoepitaxial MgZnO:P thin films

J. Vac. Sci. Technol. B 27(3), 1604-1608 (2009)
[ | | IF: 1.267 ]

419
M. Schmidt, M. Ellguth, C. Czekalla, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa, M. Helm, Q. Gu, Ch.Ch. Ling
Defects in zinc-implanted ZnO thin films

J. Vac. Sci. Technol. B 27(3), 1597-1600 (2009)
[ | | IF: 1.267 ]

418
R. Schmidt-Grund, A. Hinkel, H. Hilmer, J. Zúñiga-Pérez, C. Sturm, B. Rheinländer, M. Grundmann
ZnO nano-pillar resonators with coaxial Bragg reflectors

Proc. Mat. Res. Soc. 1178, 1178-AA10-13:1-7 (2009)
[ | ]

417
C. Sturm, H. Hilmer, R. Schmidt-Grund, M. Grundmann
Observation of strong exciton-photon coupling at temperatures up to 410 K

New J. Phys. 11(7), 073044:1-12 (2009)
[ | | IF: 4.063 ]

416
M. Willander, O. Nur, Q.X. Zhao, L.L. Yang, M. Lorenz, B.Q. Cao, J. Zúñiga-Pérez, C. Czekalla, G. Zimmermann, M. Grundmann, A. Bakin, A. Behrends, M.A.-. Suleiman, A. Al-Shaer, A.C. Mofor, B. Postels, A. Waag, N. Boukos, A. Travlos, J. Guinard, D.L.S. Dang
Zinc Oxide Nanorods Based Photonic Devices: Recent Progress in Growth, Light Emitting Diodes and Lasers

Nanotechnology 20(33), 332001:1-40 (2009)
[ | | IF: 3.842 ]

415
B.Q. Cao, J. Zúñiga-Pérez, N. Boukos, C. Czekalla, H. Hilmer, J. Lenzner, A. Travlos, M. Lorenz, M. Grundmann
Homogeneous core/shell ZnO/MgZnO quantum well heterostructures on vertical ZnO nanowires
 
Nanotechnology 20(30), 305701:1-8 (2009)
[ | link | | extra | IF: 3.842 ]

414
M. Khalid, M. Ziese, A. Setzer, P. Esquinazi, M. Lorenz, H. Hochmuth, M. Grundmann, D. Spemann, T. Butz, G. Brauer, W. Anwand, G. Fischer, W.A. Adeagbo, W. Hergert, A. Ernst
Defect-induced magnetic order in pure ZnO films

Phys. Rev. B 80(3), 035331:1-5 (2009)
[ | | IF: 3.767 ]

413
H. von Wenckstern, H. Schmidt, M. Brandt, A. Lajn, R. Pickenhain, M. Lorenz, M. Grundmann, D.M. Hofmann, A. Polity, B.K. Meyer, H. Saal, M. Binnewies, A. Börger, K.-D. Becker, V.A. Tikhomirov, K. Jug
Anionic and cationic substitution in ZnO

Prog. Sol. Stat. Chem. 37(2-3), 153-172 (2009)
[ | | IF: 7.429 ]

412
A.O. Ankiewicz, W. Gehlhoff, J.S. Martins, A.S. Pereira, S. Pereira, A. Hoffmann, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, M.C. Carmo, T. Trindade, N.A. Sobolev
Magnetic and structural properties of transition metal doped zinc-oxide nanostructures

Phys. Status Solidi B 246(4), 766-770 (2009)
[ | | IF: 1.522 ]

411
F. Lipski, S.B. Thapa, J. Hertkorn, T. Wunderer, S. Schwaiger, F. Scholz, M. Feneberg, M. Wiedenmann, K. Thonke, H. Hochmuth, M. Lorenz, M. Grundmann
Studies towards freestanding GaN in hydride vapor phase epitaxy by in-situ etching of a sacrificial ZnO buffer layer

Phys. Status Solidi C 6(52), S352-S355 (2009)
[ | ]

410
D. Lausch, K. Petter, H. von Wenckstern, M. Grundmann
Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells

Phys. Status Solidi RRL 3(2-3), 70-72 (2009)
[ | | extra | IF: 2.58 ]

409
M. Lorenz, M. Brandt, G. Wagner, H. Hochmuth, G. Zimmermann, H. von Wenckstern, M. Grundmann
MgZnO:P Homoepitaxy by Pulsed Laser Deposition: Pseudomorphic Layer-by-Layer Growth and High Electron Mobility

Proc. SPIE 7217, 72170N:1-15 (2009)
[ | ]

408
H. Frenzel, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Grundmann
ZnO-based metal-semiconductor field-effect transistors with Ag-, Pt-, Pd-, and Au-Schottky gates

Thin Solid Films 518, 1119-1123 (2009)
[ | | IF: 1.604 ]

407
M. Brandt, H. von Wenckstern, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann
Formation of a two-dimensional electron gas in MgZnO/ZnO heterostructures and quantum wells

Thin Solid Films 518, 1048-1052 (2009)
[ | | IF: 1.604 ]

406
M. Grundmann
Transparent oxide electronic devices
 
BuildMoNa Annual Report 2009, p. 33-35 (2009)
[ | link ]

405
R. Bakowskie, H. von Wenckstern, D. Lausch, M. Müller, K. Petter, M. Grundmann
Thermal admittance spectroscopy of multicrystalline silicon wafers and solar cells
Proc. 24th European Photovoltaic Solar Energy Conference, p. 2100-2102 (2009)
[ | ]

404
D. Lausch, K. Petter, R. Bakowskie, H. von Wenckstern, M. Grundmann
Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells
Proc. 24th European Photovoltaic Solar Energy Conference, p. 2053-2055 (2009)
[ | ]

403
Report of The Physics Institutes of Universität Leipzig 2008
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

402
S.Q. Zhou, K. Potzger, Q.Y. Xu, G. Talut, M. Lorenz, W. Skorupa, M. Helm, J. Fassbender, M. Grundmann, H. Schmidt
Ferromagnetic transition metal implanted ZnO: A diluted magnetic semiconductor?
Vacuum 83(Suppl. 1), S13-S19 (2009)
[ | link | ]

401
J. Bachmann, R. Zierold, Y.T. Chong, R. Hauert, Ch. Sturm, R. Schmidt-Grund, B. Rheinländer, M. Grundmann, U. Gösele, K. Nielsch
Selbstkatalytische Atomlagenabscheidung von Siliciumdioxid

Angew. Chemie 120(33), 6272-6274 (2008)
[ | ]

400
J. Bachmann, R. Zierold, Y.T. Chong, R. Hauert, Ch. Sturm, R. Schmidt-Grund, B. Rheinländer, M. Grundmann, U. Gösele, K. Nielsch
A Practical, Self-Catalytic, Atomic Layer Deposition of Silicon Dioxide

Angew. Chemie Int. Ed. 47(33), 6177-6179 (2008)
[ | | extra | IF: 13.734 ]

399
S. Zhou, Q. Xu, K. Potzger, G. Talut, R. Grötzschel, J. Fassbender, M. Vinnichenko, J. Grenzer, M. Helm, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
Room temperature ferromagnetism in carbon-implanted ZnO

Appl. Phys. Lett. 93(23), 232507:1-3 (2008)
[ | link | | IF: 3.794 ]

398
C. Czekalla, C. Sturm, R. Schmidt-Grund, B. Cao, M. Lorenz, M. Grundmann
Whispering Gallery Mode Lasing in Zincoxide Microwires

Appl. Phys. Lett. 92(24), 241102:1-3 (2008)
[ | | IF: 3.794 ]

397
H. Frenzel, A. Lajn, M. Brandt, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
ZnO metal-semiconductor field-effect transistors with Ag-Schottky-gates

Appl. Phys. Lett. 92(19), 192108:1-3 (2008)
[ | | IF: 3.794 ]

396
Q. Xu, H. Schmidt, S. Zhou, K. Potzger, M. Helm, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, Ch. Meinecke, M. Grundmann
Room temperature ferromagnetism in ZnO films due to defects

Appl. Phys. Lett. 92(8), 082508:1-3 (2008)
[ | | IF: 3.794 ]

395
R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann
Exciton-polariton formation at room temperature in a planar ZnO resonator structure

Appl. Phys. A 93, 331-337 (2008)
[ | | IF: 1.545 ]

394
S. Zhou, Q. Xu, K. Potzger, G. Talut, R. Groetzschel, J. Fassbender, M. Vinnichenko, J. Grenzer, M. Helm, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
Room temperature ferromagnetism in carbon-implanted ZnO

arxiv: 0811.3487 (2008)
[ | link ]

393
N. Ghosh, J.B. Quiquia, Q. Xu, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
Andreev reflection and spin polarization measurement of Co/YBCO junction

arxiv: 0804.0170 (2008)
[ | link ]

392
S. Müller, C. Ronning, M. Lorenz, C. Czekalla, G. Benndorf, H. Hochmuth, M. Grundmann, H. Schmidt
Intense white photoluminescence emission of V-implanted zinc oxide thin films

J. Appl. Phys. 104(12), 123504:1-7 (2008)
[ | | IF: 2.21 ]

391
M. Brandt, H. von Wenckstern, H. Schmidt, A. Rahm, G. Biehne, G. Benndorf, H. Hochmuth, M. Lorenz, Ch. Meinecke, T. Butz, M. Grundmann
High electron mobility of phosphorous doped homoepitaxial ZnO thin films grown by pulsed laser deposition

J. Appl. Phys. 104(1), 013708:1-6 (2008)
[ | | IF: 2.21 ]

390
A.S. Pereira, S. Pereira, T. Trindade, A.O. Ankiewicz, M.C. Carmo, N.A. Sobolev, W. Gehlhoff, A. Hoffmann, M. Grundmann
Surface modification of Co-doped ZnO nanocrystals and its effect on the magnetic properties

J. Appl. Phys. 103(7), 07D140:1-3 (2008)
[ | | IF: 2.21 ]

389
S.B. Thapa, J. Hertkorn, T. Wunderer, F. Lipski, F. Scholz, A. Reiser, Y. Xie, M. Feneberg, K. Thonke, R. Sauer, M. Dürrschnabel, L.D. Yao, D. Gerthsen, H. Hochmuth, M. Lorenz, M. Grundmann
MOVPE growth of GaN around ZnO nanopillars

J. Cryst. Growth 310, 5139-5142 (2008)
[ | | IF: 1.552 ]

388
V.M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, M. Schubert
Interface-charge-coupled polarization response of Pt-BaTiO3-ZnO-Pt heterojunctions: A physical model approach

J. Electr. Mat. 37, 1029-1034 (2008)
[ | | IF: 1.635 ]

387
R. Schmidt-Grund, B. Rheinländer, E.M. Kaidashev, M. Lorenz, M. Grundmann, D. Fritsch, M.M. Schubert, H. Schmidt, C.M. Herzinger
Vacuum Ultraviolet Dielectric Function and Band Structure of ZnO

J. Korean Phys. Soc. 53, 88-93 (2008)
[ | | IF: 0.506 ]

386
H. von Wenckstern, M. Brandt, H. Schmidt, C. Hanisch, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann
Homoepitaxial ZnO thin films by pulsed-laser deposition

J. Korean Phys. Soc. 53, 3064-3067 (2008)
[ | | IF: 0.506 ]

385
H. von Wenckstern, G. Biehne, M. Lorenz, M. Grundmann, F.D. Auret, W.E. Meyer, P.J.J. van Rensburg, M. Hayes, J.M. Nel
Dependence of trap concentrations in ZnO thin films on annealing conditions

J. Korean Phys. Soc. 53, 2861-2863 (2008)
[ | | IF: 0.506 ]

384
D. Fritsch, H. Schmidt, R. Schmidt-Grund, M. Grundmann
Intensity of Optical Absorption Close to the Band Edge in Strained ZnO Films

J. Korean Phys. Soc. 53, 123-126 (2008)
[ | | IF: 0.506 ]

383
F.D. Auret, W.E. Meyer, P.J.J. van Rensburg, M. Hayes, J.M. Nel, H. von Wenckstern, H. Hochmuth, G. Biehne, M. Lorenz, M. Grundmann
Electronic properties of shallow level defects in ZnO grown by pulsed laser deposition
J. Phys. Conf. Ser. 100, 042038:1-4 (2008)
[ | ]

382
Q. Xu, H. Schmidt, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, Ch. Meinecke, M. Grundmann
Room temperature ferromagnetism in Nd- and Mn-codoped ZnO films

J. Phys. D: Appl. Phys. 41, 105012:1-5 (2008)
[ | | IF: 2.772 ]

381
V. Voora, T. Hofmann, A. Kjerstad, M. Brandt, M. Lorenz, M. Grundmann, M. Schubert
Interface-charge-coupled polarization response model of Pt-BaTiO3-ZnO-Pt heterojunctions: Physical parameters variation

Proc. Mat. Res. Soc. 1074, I01-11:1-6 (2008)
[ | ]

380
C. Czekalla, J. Guinard, C. Hanisch, B. Cao, E.M. Kaidashev, N. Boukos, A. Travlos, J. Renard, B. Gayral, D.L.S. Dang, M. Lorenz, M. Grundmann
Spatial fluctuations of the optical emission from single ZnO/MgZnO nanowire quantum wells
 
Nanotechnology 19(11), 115202:1-6 (2008)
[ | link | | extra | IF: 3.842 ]

379
Q. Xu, L. Hartmann, S. Zhou, A. Mücklich, K. Potzger, M. Helm, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
Spin manipulation in Co doped ZnO

Phys. Rev. Lett. 101(7), 076601:1-4 (2008)
[ | | IF: 7.645 ]

378
M. Lorenz, G. Wagner, A. Rahm, H. Schmidt, H. Hochmuth, H. Schmid, W. Mader, M. Brandt, H. von Wenckstern, M. Grundmann
Homoepitaxial ZnO Thin Films by PLD: Structural Properties

Phys. Status Solidi C 5, 3280-3287 (2008)
[ | ]

377
C. Sturm, T. Chavdarov, R. Schmidt-Grund, B. Rheinländer, C. Bundesmann, H. Hochmuth, M. Lorenz, M. Schubert, M. Grundmann
Investigation of the free charge carrier properties at the ZnO-sapphire interface in a- plane ZnO films studied by generalized infrared ellipsometry

Phys. Status Solidi C 5, 1350-1353 (2008)
[ | ]

376
V.M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, M. Schubert
Electrooptic ellipsometry study of piezoelectric BaTiO3-ZnO heterostructures

Phys. Status Solidi C 5, 1328-1331 (2008)
[ | ]

375
J. Sellmann, Ch. Sturm, R. Schmidt-Grund, Ch. Czekalla, J. Lenzner, H. Hochmuth, B. Rheinländer, M. Lorenz, M. Grundmann
Structural and optical properties of ZrO2 and Al2O3 thin films and Bragg reflectors grown by pulsed laser deposition

Phys. Status Solidi C 5, 1240-1243 (2008)
[ | ]

374
B. Cao, M. Lorenz, M. Brandt, H. von Wenckstern, J. Lenzner, G. Biehne, M. Grundmann
p-type conducting ZnO:P microwires prepared by direct carbothermal growth

Phys. Status Solidi RRL 2, 37-39 (2008)
[ | | IF: 2.58 ]

373
M. Mäder, J.W. Gerlach, T. Höche, C. Czekalla, M. Lorenz, M. Grundmann, B. Rauschenbach
ZnO nanowall networks grown on DiMPLA pre-patterned thin gold films

Phys. Status Solidi RRL 2, 200-202 (2008)
[ | | IF: 2.58 ]

372
B.Q. Cao, M. Lorenz, H. von Wenckstern, C. Czekalla, M. Brandt, J. Lenzner, G. Benndorf, G. Biehne, M. Grundmann
Phosphorus doped ZnO nanowires: acceptor-related cathodoluminescence and p-type conducting FET-characteristics

Proc. SPIE 6895, 68950V:1-12 (2008)
[ | ]

371
D. Hofstetter, Y. Bonetti, E. Baumann, F.R. Giorgetta, A.-H. El-Shaer, A. Bakin, A. Waag, R. Schmidt-Grund, M. Grundmann, M. Schubert
Characterization of an optically pumped 3rd order distributed feedback laser

Proc. SPIE 6895, 68950J:1-8 (2008)
[ | ]

370
H. von Wenckstern, M. Brandt, H. Schmidt, G. Benndorf, J. Zippel, H. Hochmuth, M. Lorenz, M. Grundmann
Properties of homoepitaxial ZnO and ZnO:P thin films grown by pulsed-laser deposition

Proc. SPIE 6895, 689505:1-11 (2008)
[ | ]

369
A. Müller, G. Benndorf, S. Heitsch, C. Sturm, M. Grundmann
Exciton-phonon coupling and exciton thermalization in MgxZn1-xO thin films

Sol. St. Comm. 148, 570-572 (2008)
[ | | IF: 1.534 ]

368
Q. Xu, H. Schmidt, S. Zhou, K. Potzger, M. Helm, H. Hockmuth, M. Lorenz, C. Meinecke, M. Grundmann
Magnetic and transport properties of Cu1.05Cr0.89Mg0.05O2 and Cu0.96Cr0.95Mg0.05Mn0.04O2 films

Thin Solid Films 516, 8543-8546 (2008)
[ | | IF: 1.604 ]

367
Q. Xu, L. Hartmann, H. Schmidt, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, C. Meinecke, M. Grundmann
Magnetotransport properties of Zn90Mn7.5Cu2.5O thin films

Thin Solid Films 516, 1160-1163 (2008)
[ | | IF: 1.604 ]

366
M. Grundmann
ZnO-nano-wires for miniaturised light sources
 
BuildMoNa Annual Report 2008, p. 29-31 (2008)
[ | link ]

365
E.M. Kaidashev, M. Lorenz, J. Lenzner, A. Ramm, T. Nobis, M. Grundmann, N. Zakharov, A.T. Kozakov, S.I. Shevtsova, K.G. Abdulvakhidov, V.E. Kaidashev
Structure and optical properties of ZnO nanowires fabricated by pulsed laser deposition on GaN/Si(111) films with the use of Au and NiO catalysts
Bull. Russ. Acad. Sci.: Physics 72(8), 1129-1131 (2008)
[ | ]

364
M. Grundmann, A. Rahm, T. Nobis, M. Lorenz, C. Czekalla, E.M. Kaidashev, J. Lenzner, N. Boukos, A. Travlos
Growth and characterization of ZnO nano- and microstuctures
 
Handbook of Self-Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics, p. 293-323 (2008), M. Henini, ed. (Elsevier, Amsterdam, 2008), ISBN 978-0-08-046325-4
[ | | extra ]

363
Report of The Physics Institutes of Universität Leipzig 2007
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

362
H. Schmidt, M. Wiebe, B. Dittes, M. Grundmann
Meyer-Neldel rule in ZnO

Appl. Phys. Lett. 91(23), 232110:1-3 (2007)
[ | | IF: 3.794 ]

361
D. Hofstetter, Y. Bonetti, F.R. Giorgetta, A.-H. El-Shaer, A. Bakin, A. Waag, R. Schmidt-Grund, M. Schubert, M. Grundmann
Demonstration of an ultraviolet ZnO-based optically pumped third order distributed feedback laser

Appl. Phys. Lett. 91(11), 111108:1-3 (2007)
[ | | IF: 3.794 ]

360
Q. Xu, H. Schmidt, L. Hartmann, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, Ch. Meinecke, M. Grundmann
Room temperature ferromagnetism in Mn-doped ZnO films mediated by acceptor levels

Appl. Phys. Lett. 91(9), 092503:1-3 (2007)
[ | | IF: 3.794 ]

359
H. von Wenckstern, M. Allen, H. Schmidt, P. Miller, R. Reeves, S. Durbin, M. Grundmann
Defects in hydrothermally grown bulk ZnO

Appl. Phys. Lett. 91(2), 022913:1-3 (2007)
[ | | IF: 3.794 ]

358
Y. Liu, Q. Xu, H. Schmidt, L. Hartmann, H. Hochmuth, M. Lorenz, M. Grundmann, X. Han, Z. Zhang
Co location and valence state determination in ferromagnetic ZnO:Co thin films by atom-location-by-channeling-enhanced-microanalysis electron energy-loss spectroscopy

Appl. Phys. Lett. 90(15), 154101:1-3 (2007)
[ | | IF: 3.794 ]

357
M. Lorenz, R. Johne, H.P.D. Schenk, S.I. Borenstain, A. Schön, C. Bekeny, T. Voß, J. Gutowski, T. Nobis, H. Hochmuth, J. Lenzner, M. Grundmann
Self absorption in the room-temperature cathodoluminescence of ZnO scintillator thin films on sapphire

Appl. Phys. Lett. 89(24), 243510:1-3 (2007)
[ | | IF: 3.794 ]

356
S. Heitsch, G. Benndorf, G. Zimmermann, C. Schulz, D.Spemann, H. Hochmuth, H. Schmidt, Th. Nobis, M. Lorenz, M. Grundmann
Optical and structural properties of MgZnO/ZnO hetero- and double heterostructures grown by pulsed laser deposition

Appl. Phys. A 88, 99-104 (2007)
[ | | IF: 1.545 ]

355
R. Johne, M. Lorenz, H. Hochmuth, J. Lenzner, H. von Wenckstern, G. Zimmermann, H. Schmidt, R. Schmidt-Grund, M. Grundmann
Cathodoluminescence of large-area PLD grown ZnO thin films measured in transmission and reflection

Appl. Phys. A 88, 89-93 (2007)
[ | | IF: 1.545 ]

354
A. Rahm, M. Lorenz, Th. Nobis, G. Zimmermann, M. Grundmann, B. Fuhrmann, F. Syrowatka
Pulsed Laser Deposition and characterization of ZnO nanowires with regular lateral arrangement

Appl. Phys. A 88, 31-34 (2007)
[ | | IF: 1.545 ]

353
H. Schmidt, M. Diaconu, H. Hochmuth, G. Benndorf, H. von Wenckstern, G. Biehne, M. Lorenz, M. Grundmann
Electrical and optical spectroscopy on ZnO:Co films

Appl. Phys. A 88, 157-160 (2007)
[ | | IF: 1.545 ]

352
H. von Wenckstern, M. Brandt, H. Schmidt, G. Biehne, R. Pickenhain, H. Hochmuth, M. Lorenz, M. Grundmann
Donor like defects in ZnO substrate materials and ZnO thin films

Appl. Phys. A 88, 135-139 (2007)
[ | | IF: 1.545 ]

351
H. von Wenckstern, G. Benndorf, S. Heitsch, J. Sann, M. Brandt, H. Schmidt, J. Lenzner, M. Lorenz, A.Y. Kuznetsov, B.K. Meyer, M. Grundmann
Properties of phosphorous doped ZnO

Appl. Phys. A 88, 125-128 (2007)
[ | | IF: 1.545 ]

350
N. Ghosh, H. Schmidt, M. Grundmann
Andreev reflections at large ferromagnet/high-TC superconductor area junctions with rough interface

arxiv: 0712.2131 (2007)
[ | link ]

349
K. Goede, M. Bachmann, W. Janke, M. Grundmann
Specific Adhesion of Peptides on Semiconductor Surfaces in Experiment and Simulation

arxiv: 0710.4562 (2007)
[ | link ]

348
A.O. Ankiewicz, W. Gehlhoff, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, M.C. Carmo, N.A. Sobolev
Electron Paramagnetic Resonance Characterization of Mn- and Co-Doped ZnO Nanowires

Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 63-64 (2007)
[ | ]

347
K. Goede, M. Bachmann, W. Janke, M. Grundmann
Specific adhesion of peptides on semiconductor surfaces in experiment and simulation

Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 611-612 (2007)
[ | link | ]

346
S. Heitsch, G. Zimmermann, J. Lenzner, H. Hochmuth, G. Benndorf, M. Lorenz, M. Grundmann
Photoluminescence of MgxZn1-xO/ZnO Quantum Wells Grown by Pulsed Laser Deposition

Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 409-410 (2007)
[ | ]

345
D. Fritsch, H. Schmidt, M. Grundmann
Calculated optical properties of wurtzite GaN and ZnO

Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 325-326 (2007)
[ | ]

344
H. Frenzel, H. von Wenckstern, A. Weber, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Measurement of deep intrinsic defects in thin ZnO films via mid-infrared photocurrent spectroscopy

Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 301-302 (2007)
[ | ]

343
R. Schmidt-Grund, N. Ashkenov, M.M. Schubert, W. Czakai, D. Faltermeier, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann
Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO

Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 271-272 (2007)
[ | ]

342
C. Sturm, R. Schmidt-Grund, R. Kaden, H. von Wenckstern, B. Rheinländer, K. Bente, M. Grundmann
Optical Properties of Cylindrite

Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 1483-1484 (2007)
[ | ]

341
Q. Xu, L. Hartmann, H. Schmidt, H. Hochmuth, M. Lorenz, R. Schmidt-Grund, C. Sturm, D. Spemann, M. Grundmann
The magnetotransport properties of Co-doped ZnO films

Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 1187-1188 (2007)
[ | ]

340
R. Schmidt-Grund, B. Rheinländer, T. Gühne, H. Hochmuth, V. Gottschalch, A. Rahm, J. Lenzner, M. Grundmann
ZnO micro-pillar resonators with coaxial Bragg reflectors

Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 1137-1138 (2007)
[ | ]

339
T. Nobis, A. Rahm, M. Lorenz, M. Grundmann
Temperature dependence of the whispering gallery effect in ZnO nanoresonators

Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 1057-1058 (2007)
[ | ]

338
S. Heitsch, G. Zimmermann, D. Fritsch, C. Sturm, R. Schmidt-Grund, C. Schulz, H. Hochmuth, D. Spemann, G. Benndorf, B. Rheinländer, T. Nobis, M. Lorenz, M. Grundmann
Luminescence and surface properties of MgxZn1-xO thin films grown by pulsed laser deposition

J. Appl. Phys. 101(8), 083521:1-6 (2007)
[ | | IF: 2.21 ]

337
Q. Xu, L. Hartmann, H. Schmidt, H. Hochmuth, M. Lorenz, R. Schmidt-Grund, C. Sturm, D. Spemann, M. Grundmann
Magnetoresistance and anomalous Hall effect in magnetic ZnO films

J. Appl. Phys. 101(6), 063918:1-5 (2007)
[ | | IF: 2.21 ]

336
A.O. Ankiewicz, M.C. Carmo, N.A. Sobolev, W. Gehlhoff, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann
Electron paramagnetic resonance in transition metal-doped ZnO nanowires

J. Appl. Phys. 101(2), 024324:1-6 (2007)
[ | | IF: 2.21 ]

335
A. Rahm, E.M. Kaidashev, H. Schmidt, M. Diaconu, A. Pöppl, R. Böttcher, C. Meinecke, T. Butz, M. Lorenz, M. Grundmann
Growth and characterization of Mn- and Co-doped ZnO nanowires

Microchim. Acta 156, 21-25 (2007)
[ | | IF: 3.434 ]

334
H. von Wenckstern, M. Brandt, J. Lenzner, G. Zimmermann, H. Hochmuth, M. Lorenz, M. Grundmann
Temperature dependent Hall measurements on PLD thin films

Proc. Mat. Res. Soc. 957, 23:1-6 (2007)
[ | ]

333
S. Heitsch, G. Zimmermann, A. Müller, J. Lenzner, H. Hochmuth, G. Benndorf, M. Lorenz, M. Grundmann
Interface and Luminescence Properties of Pulsed Laser Deposited MgZnO/ZnO Quantum Wells with Strong Confinement

Proc. Mat. Res. Soc. 957, 229:1-6 (2007)
[ | ]

332
M. Grundmann, A. Rahm, Th. Nobis, H. von Wenckstern, M. Lorenz, C. Czekalla, J. Lenzner
Growth and Characterization of Optical and Electrical Properties of ZnO Nano- and Microwires

Proc. Mat. Res. Soc. 957, 107:1-6 (2007)
[ | ]

331
R. Schmidt-Grund, C. Sturm, M. Schubert, B. Rheinländer, D. Faltermeier, H. Hochmuth, A. Rahm, J. Bläsing, C. Bundesmann, J. Zúñiga-Pérez, T. Chavdarov, M. Lorenz, M. Grundmann
Valence Band Structure of ZnO and MgxZn1-xO

Proc. Mat. Res. Soc. 1035, 163-169 (2007)
[ | ]

330
M. Allen, H. von Wenckstern, M. Grundmann, S. Hatfield, P. Jefferson, P. King, T. Veal, C. McConville, S. Durbin
Mechanisms in the Formation of High Quality Schottky Contacts to n-type ZnO

Proc. Mat. Res. Soc. 1035, 11-16 (2007)
[ | ]

329
B.Q. Cao, M. Lorenz, A. Rahm, H. von Wenckstern, C. Czekalla, J. Lenzner, G. Benndorf, M. Grundmann
Phosphorous acceptor doped ZnO nanowires prepared by pulsed laser deposition

Nanotechnology 18, 455707:1-5 (2007)
[ | | IF: 3.842 ]

328
J. Zúñiga-Pérez, A. Rahm, C. Czekalla, J. Lenzner, M. Lorenz, M. Grundmann
Ordered growth of tilted ZnO nanowires: morphological, structural and optical characterization

Nanotechnology 18, 195303:1-7 (2007)
[ | | IF: 3.842 ]

327
F.D. Auret, W.E. Meyer, P.J.J. van Rensburg, M. Hayes, J.M. Nel, H. von Wenckstern, H. Schmidt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 meV and 370 meV below the conduction band

Physica B 401-402, 378-381 (2007)
[ | | IF: 1.327 ]

326
Q. Xu, L. Hartmann, H. Schmidt, H. Hochmuth, M. Lorenz, D. Spemann, M. Grundmann
s-d exchange interaction induced magnetoresistance in magnetic ZnO

Phys. Rev. B 76(13), 134417:1-4 (2007)
[ | | IF: 3.767 ]

325
H. Frenzel, H. von Wenckstern, A. Weber, H. Schmidt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Photocurrent spectroscopy of deep levels in ZnO thin films

Phys. Rev. B 76(3), 035214:1-6 (2007)
[ | | IF: 3.767 ]

324
G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, H. von Wenckstern, M. Brandt, M. Lorenz, M. Grundmann
Defects in N+ ion-implanted ZnO single crystals studied by positron annihilation and Hall effect

Phys. Status Solidi C 4, 3642-3645 (2007)
[ | ]

323
H. von Wenckstern, H. Schmidt, C. Hanisch, M. Brandt, C. Czekalla, G. Benndorf, G. Biehne, A. Rahm, H. Hochmuth, M. Lorenz, M. Grundmann
Homoepitaxy of ZnO by Pulsed-Laser Deposition
 
Phys. Status Solidi RRL 1, 129-131 (2007)
[ | | extra | IF: 2.58 ]

322
T. Nobis, A. Rahm, C. Czekalla, M. Lorenz, M. Grundmann
Optical whispering gallery modes in dodecagonal zinc oxide microcrystals

Superlatt. Microstr. 42(1-6), 333-336 (2007)
[ | | IF: 1.564 ]

321
G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, C. Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, M. Grundmann
Comparative characterization of differently grown ZnO single crystals by positron annihilation and Hall effect

Superlatt. Microstr. 42(1-6), 259-264 (2007)
[ | | IF: 1.564 ]

320
M. Ungureanu, H. Schmidt, Q. Xu, H. von Wenckstern, D. Spemann, H. Hochmuth, M. Lorenz, M. Grundmann
Electrical and magnetic properties of RE-doped ZnO thin films (RE = Gd, Nd)

Superlatt. Microstr. 42(1-6), 231-235 (2007)
[ | | IF: 1.564 ]

319
H. von Wenckstern, R. Pickenhain, H. Schmidt, M. Brandt, G. Biehne, M. Lorenz, M. Grundmann, G. Brauer
Investigation of acceptor states in ZnO by junction DLTS

Superlatt. Microstr. 42(1-6), 14-20 (2007)
[ | | IF: 1.564 ]

318
R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmut, A. Rahm, M. Lorenz, M. Grundmann
ZnO based planar and micropillar resonators

Superlatt. Microstr. 41(5-6), 360-363 (2007)
[ | | IF: 1.564 ]

317
C. Czekalla, J. Lenzner, A. Rahm, T. Nobis, M. Grundmann
A Zinc Oxide Microwire Laser

Superlatt. Microstr. 41(5-6), 347-351 (2007)
[ | | IF: 1.564 ]

316
M. Lorenz, M. Brandt, J. Schubert, H. Hochmuth, H. von Wenckstern, M. Schubert, M. Grundmann
Polarization coupling in epitaxial ZnO/BaTiO3 thin film heterostructures on SrTiO3 (100) substrates

Proc. SPIE 6474, 64741S:1-9 (2007)
[ | ]

315
M. Schmidt, R. Pickenhain, M. Grundmann
Exact Solutions for the Capacitance of Space Charge Regions at Semiconductor Interfaces

Sol. St. Electr. 51(6), 1002-1004 (2007)
[ | | IF: 1.482 ]

314
M. Ungureanu, H. Schmidt, H. von Wenckstern, H. Hochmuth, M. Lorenz, M. Grundmann, M. Fecioru-Morariu, G. Güntherodt
A comparison between ZnO films doped with 3d and 4f magnetic ions

Thin Solid Films 515, 8761-8763 (2007)
[ | | IF: 1.604 ]

313
M. Grundmann
Nanowhiskers and their applications
 
1st Saxon Biotechnology Symposium, p. 24 (2007), ISBN 978-3-86780-044-0
[ ]

312
Report of The Physics Institutes of Universität Leipzig 2006
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

311
M. Grundmann
The Physics of Semiconductors, An Introduction including Devices and Nanophysics
 
(Springer, Heidelberg, 2006), ISBN 978-3-540-25370-9
[ | link | ]

310
H. von Wenckstern, R. Pickenhain, H. Schmidt, M. Brandt, G. Biehne, M. Lorenz, M. Grundmann
Deep acceptors states in ZnO single crystals

Appl. Phys. Lett. 89(9), 092122:1-3 (2006)
[ | | IF: 3.794 ]

309
D. Fritsch, H. Schmidt, M. Grundmann
Pseudopotential band structures of rocksalt MgO, ZnO, and Mg1-xZnxO

Appl. Phys. Lett. 88(13), 134104:1-3 (2006)
[ | | IF: 3.794 ]

308
H. von Wenckstern, G. Biehne, R.A. Rahman, H. Hochmuth, M. Lorenz, M. Grundmann
Mean barrier height of Pd Schottky contacts on ZnO thin films

Appl. Phys. Lett. 88(9), 092102:1-3 (2006)
[ | | IF: 3.794 ]

307
R. Schmidt-Grund, A. Carstens, B. Rheinländer, D. Spemann, H. Hochmut, G. Zimmermann, M. Lorenz, M. Grundmann, C.M. Herzinger, M. Schubert
Refractive indices and band-gap properties of rocksalt MgxZn1-xO (0.68≤x≤1)

J. Appl. Phys. 99(12), 123701:1-7 (2006)
[ | | IF: 2.21 ]

306
C. Bundesmann, A. Rahm, M. Lorenz, M. Grundmann, M. Schubert
Infrared optical properties of MgxZn1-xO thin films (0≤x≤1): Long-wavelength optical phonons and dielectric constants

J. Appl. Phys. 99(11), 113504:1-11 (2006)
[ | | IF: 2.21 ]

305
J. Zúñiga-Pérez, V. Muñoz-Sanjosé, M. Lorenz, G. Benndorf, S. Heitsch, D. Spemann, M. Grundmann
Structural characterization of a-plane Zn1-xCdxO (0≤x≤0.085) thin films grown by metal-organic vapor phase epitaxy

J. Appl. Phys. 99(2), 023514:1-6 (2006)
[ | | IF: 2.21 ]

304
E. Schubert, J. Fahlteich, B. Rauschenbach, M. Schubert, M. Lorenz, M. Grundmann, G. Wagner
Recrystallization behavior in chiral sculptured thin films from silicon

J. Appl. Phys. 100(1), 016107:1-3 (2006)
[ | | IF: 2.21 ]

303
Q. Xu, L. Hartmann, H. Schmidt, H. Hochmuth, M. Lorenz, R. Schmidt-Grund, D. Spemann, M. Grundmann
Magnetoresistance effects in Zn0.90Co0.10O films

J. Appl. Phys. 100(1), 013904:1-4 (2006)
[ | | IF: 2.21 ]

302
M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, G. Benndorf, D. Spemann, A. Setzer, P. Esquinazi, A. Pöppl, H. von Wenckstern, K.-W. Nielsen, R. Gross, H. Schmid, W. Mader, G. Wagner, M. Grundmann
Room-temperature ferromagnetic Mn-alloyed ZnO films obtained by pulsed laser deposition

J. Magn. Magn. Mat. 307, 212-221 (2006)
[ | | IF: 1.826 ]

301
L. Hartmann, Q. Xu, H. Schmidt, H. Hochmuth, M. Lorenz, Ch. Sturm, Ch. Meinecke, M. Grundmann
Spin polarization in Zn0.95Co0.05O:(Al,Cu) thin films

J. Phys. D: Appl. Phys. 39, 4920-4924 (2006)
[ | | IF: 2.772 ]

300
K. Goede, M. Grundmann, K. Holland-Nell, A. Beck-Sickinger
Cluster properties of peptides on (100) semiconductor surfaces

Langmuir 22, 8104-8108 (2006)
[ | | IF: 4.187 ]

299
C. Bundesmann, M. Lorenz, M. Grundmann, M. Schubert
Phonon modes, dielectric constants, and exciton mass parameters in ternary MgxZn1-xO

Proc. Mat. Res. Soc. 928E, GG05-03:1-5 (2006)
[ | ]

298
S. Jaensch, H. Schmidt, M. Grundmann
Quantitative scanning capacitance microscopy

Physica B 376-377, 913-915 (2006)
[ | | IF: 1.327 ]

297
M. Diaconu, H. Schmidt, M. Fecioru-Morariu, G. Güntherodt, H. Hochmuth, M. Lorenz, M. Grundmann
Ferromagnetic behavior in Zn(Mn,P)O thin films

Phys. Lett. A 351, 323-326 (2006)
[ | | IF: 1.766 ]

296
M. Gonschorek, H. Schmidt, J. Bauer, G. Benndorf, G. Wagner, G.E. Cirlin, M. Grundmann
Thermally assisted tunneling processes in InGaAs/GaAs quantum dot structures

Phys. Rev. B 74(11), 115312:1-13 (2006)
[ | | IF: 3.767 ]

295
G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, C. Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, M. Grundmann
Defects in virgin and N+-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy

Phys. Rev. B 74(4), 045208:1-10 (2006)
[ | | IF: 3.767 ]

294
Q. Xu, L. Hartmann, H. Schmidt, H. Hochmuth, M. Lorenz, R. Schmidt-Grund, C. Sturm, D. Spemann, M. Grundmann
Metal-insulator transition in Co-doped ZnO: Magnetotransport properties

Phys. Rev. B 73(20), 205342:1-5 (2006)
[ | | IF: 3.767 ]

293
G. Brauer, W. Anwand, W. Skorupa, H. Schmidt, M. Diaconu, M. Lorenz, M. Grundmann
Structure and ferromagnetism of Mn+ ion-implanted ZnO thin films on sapphire

Superlatt. Microstr. 39(1-4), 41-49 (2006)
[ | | IF: 1.564 ]

292
H. Schmidt, M. Diaconu, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, A. Pöppl, D. Spemann, K.W. Nielsen, R. Gross, G. Wagner, M. Grundmann
Weak ferromagnetism in textured Zn1-xTMxO thin films

Superlatt. Microstr. 39(1-4), 334-339 (2006)
[ | | IF: 1.564 ]

291
M. Diaconu, H. Schmidt, A. Pöppl, R. Böttcher, J. Hoentsch, A. Rahm, H. Hochmuth, M. Lorenz, M. Grundmann
EPR study on magnetic Zn1-xMnxO

Superlatt. Microstr. 38(4-6), 413-420 (2006)
[ | | IF: 1.564 ]

290
T. Nobis, A. Rahm, M. Lorenz, M. Grundmann
Numerical Modeling of Zinc Oxide Nanocavities to Determine Their Birefringence

Proc. SPIE 6122, 61220V:1-6 (2006)
[ | ]

289
R. Schmidt-Grund, T. Gühne, H. Hochmuth, B. Rheinländer, A. Rahm, V. Gottschalch, J. Lenzner, M. Grundmann
Cylindrical resonators with coaxial Bragg reflectors

Proc. SPIE 6038, 489-498 (2006)
[ | ]

288
M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, H. von Wenckstern, G. Biehne, D. Spemann, M. Grundmann
Deep defects generated in n-conducting ZnO:TM thin films

Sol. St. Comm. 137, 417-421 (2006)
[ | | IF: 1.534 ]

287
Q. Xu, L. Hartmann, H. Schmidt, H. Hochmuth, M. Lorenz, R. Schmidt-Grund, D. Spemann, A. Rahm, M. Grundmann
Magnetoresistance in pulsed laser deposited 3d transition metal doped ZnO films

Thin Solid Films 515, 2549-2554 (2006)
[ | | IF: 1.604 ]

286
S. Heitsch, C. Bundesmann, G. Wagner, G. Zimmermann, A. Rahm, H. Hochmuth, G. Benndorf, H. Schmidt, M. Schubert, M. Lorenz, M. Grundmann
Low temperature photoluminescence and infrared dielectric functions of pulsed laser deposited ZnO thin films on silicon

Thin Solid Films 496, 234-239 (2006)
[ | | IF: 1.604 ]

285
C. Klingshirn, M. Grundmann, A. Hoffmann, B. Meyer, A. Waag
Zinkoxid - Ein alter, neuer Halbleiter
 
Physik-Journal 5(1), 33-38 (2006)
[ | link ]

284
Report of The Physics Institutes of Universität Leipzig 2005
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

283
M. Lorenz, E.M. Kaidashev, A. Rahm, Th. Nobis, J. Lenzner, G. Wagner, D. Spemann, H. Hochmuth, M. Grundmann
MgxZn1-xO (0≤x<0.2) nanowire arrays on sapphire grown by high-pressure pulsed-laser deposition

Appl. Phys. Lett. 86(14), 143113:1-3 (2005)
[ | | IF: 3.794 ]

282
B.N. Mbenkum, N. Ashkenov, M. Schubert, M. Lorenz, H. Hochmuth, D. Michel, M. Grundmann, G. Wagner
Temperature-dependent dielectric and electro-optic properties of a ZnO-BaTiO3-ZnO heterostructure grown by pulsed-laser deposition

Appl. Phys. Lett. 86(9), 091904:1-3 (2005)
[ | | IF: 3.794 ]

281
H. von Wenckstern, S. Weinhold, G. Biehne, R. Pickenhain, H. Schmidt, H. Hochmuth, M. Grundmann
Donor levels in ZnO

Adv. Sol. St. Phys. 45, 263-274 (2005)
[ | ]

280
A. Rahm, T. Nobis, E.M. Kaidashev, M. Lorenz, G. Wagner, J. Lenzner, M. Grundmann
High-pressure Pulsed Laser Deposition and Structural Characterization of Zinc Oxide Nanowires

Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 875-876 (2005)
[ | ]

279
T. Nobis, E.M. Kaidashev, A. Rahm, M. Lorenz, J. Lenzner, M. Grundmann
Optical Resonances Of Single Zinc Oxide Microcrystals

Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 849-850 (2005)
[ | ]

278
H. Schmidt, M. Diaconu, E. Guzman, H. Hochmuth, M. Lorenz, G. Benndorf, A. Setzer, P. Esquinazi, H. von Wenckstern, D. Spemann, A. Pöppl, R. Böttcher, M. Grundmann
N-conducting, ferromagnetic Mn-doped ZnO thin films on sapphire substrates

Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 351-352 (2005)
[ | ]

277
R. Schmidt-Grund, D. Fritsch, M. Schubert, B. Rheinländer, H. Schmidt, H. Hochmuth, M. Lorenz, C.M. Herzinger, M. Grundmann
Band-to-band transitions and optical properties of MgxZn1-xO films

Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 201-202 (2005)
[ | ]

276
H. von Wenckstern, S. Weinhold, G. Biehne, R. Pickenhain, E.M. Kaidashev, M. Lorenz, M. Grundmann
Static and transient capacitance spectroscopy on ZnO

Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 197-198 (2005)
[ | ]

275
H. von Wenckstern, S. Heitsch, G. Benndorf, D. Spemann, E.M. Kaidashev, M. Lorenz, M. Grundmann
Incorporation and electrical activity of group V acceptors in ZnO thin films

Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 183-184 (2005)
[ | ]

274
C. Bundesmann, M. Schubert, N. Ashkenov, M. Grundmann, G. Lippold, J. Piltz
Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe2-based photoabsorber layers on polyimide substrates

Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 165-166 (2005)
[ | ]

273
H. von Wenckstern, R. Pickenhain, S. Weinhold, M. Ziese, P. Esquinazi, M. Grundmann
Electrical properties of Ni/GaAs and Au/GaAs Schottky contacts in high magnetic fields

Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 1333-1334 (2005)
[ | ]

272
T. Nobis, M. Grundmann
Low order whispering gallery modes in hexagonal nanocavities

Phys. Rev. A 72, 063806:1-11 (2005)
[ | | IF: 3.042 ]

271
M. Diaconu, H. Schmidt, A. Pöppl, R. Böttcher, J. Hoentsch, A. Klunker, D. Spemann, H. Hochmuth, M. Lorenz, M. Grundmann
Electron paramagnetic resonance of Zn1-xMnxO thin films and single crystals

Phys. Rev. B 72(8), 085214:1-6 (2005)
[ | | IF: 3.767 ]

270
M. Grundmann, H. von Wenckstern, R. Pickenhain, Th. Nobis, A. Rahm, M. Lorenz
Electrical Properties of ZnO Thin Films and Optical Properties of ZnO-based Nanostructures

Superlatt. Microstr. 38(4-6), 317-328 (2005)
[ | | IF: 1.564 ]

269
M. Grundmann
The bias dependence of the non-radiative recombination current in p-n diodes

Sol. St. Electr. 49, 1446-1448 (2005)
[ | | IF: 1.482 ]

268
M. Lorenz, H. Hochmuth, J. Lenzner, T. Nobis, G. Zimmermann, M. Diaconu, H. Schmidt, H. von Wenckstern, M. Grundmann
Room-temperature luminescence of n-type ZnO thin films grown by pulsed laser deposition in N2, N2O, and O2

Thin Solid Films 486, 205-209 (2005)
[ | | IF: 1.604 ]

267
A. Rahm, G.W. Yang, M. Lorenz, T. Nobis, J. Lenzner, G. Wagner, M. Grundmann
Two-dimensional ZnO:Al nanosheets and nanowalls obtained by Al2O3-assisted thermal evaporation

Thin Solid Films 486, 191-194 (2005)
[ | | IF: 1.604 ]

266
N. Ashkenov, M. Schubert, E. Twerdowski, B.N. Mbenkum, H. Hochmut, M. Lorenz, H. von Wenckstern, W. Grill, M. Grundmann
Rectifying ferroelectric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures

Thin Solid Films 486, 153-157 (2005)
[ | | IF: 1.604 ]

265
M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, G. Benndorf, J. Lenzner, D. Spemann, A. Setzer, K.-W. Nielsen, P. Esquinazi, M. Grundmann
UV optical properties of ferromagnetic Mn-doped ZnO thin films grown by PLD

Thin Solid Films 486, 117-121 (2005)
[ | | IF: 1.604 ]

264
R. Schmidt-Grund, T. Nobis, V. Gottschalch, B. Rheinländer, H. Herrnberger, M. Grundmann
a-Si/SiOx Bragg-reflectors on micro-structured InP

Thin Solid Films 483, 257-260 (2005)
[ | | IF: 1.604 ]

263
K. Goede, M. Bachmann, W. Janke, M. Grundmann
Binding specificity of peptides on semiconductor surfaces
4th Biotechnology Symposium 2005 - Abstracts, p. 192 (2005), A.A. Robitzki, A.G. Beck-Sickinger, S. Brakmann, S. Eichler, eds. (Universit, Leipzig, 2005)

262
K. Goede, M. Grundmann, K. Holland-Nell, A.G. Beck-Sickinger, M. Bachmann, W. Janke
Peptide auf neuen Wegen
BIOforum 10, 53-55 (2005)
[ ]

261
M. Grundmann
Quantenfäden, Quantenpunkte
 
Effekte der Physik und ihre Anwendungen (3. Auflage), p. 478-483 (2005), M. von Ardenne, G. Musiol, S. Reball, eds. (Harri Deutsch, Frankfurt/M, 2005), ISBN 3-8171-1682-9
[ | link ]

260
M. Grundmann
Quantum devices of reduced dimensionality
 
Encyclopedia of Condensed Matter Physics, p. 17-22 (2005), F. Bassani, J. Liedl, P. Wyder, eds. (Elsevier, Kidlington, 2005), ISBN 978-0-12-369401-0
[ | | extra ]

259
Th. Nobis, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann
Whispering Gallery Modes in Hexagonal Zinc Oxide Micro- and Nanocrystals
 
NATO Science Series II: Mathematics, Physics and Chemistry 194, 83-98 (2005), N.H. Nickel, E. Terukov, eds. (Kluwer, Dordrecht, 2005), ISBN 1-4020-3474-1
[ | ]

258
M. Grundmann, H. von Wenckstern, R. Pickenhain, S. Weinhold, B. Chengnui, O. Breitenstein
Electrical properties of ZnO thin films and single crystals
 
NATO Science Series II: Mathematics, Physics and Chemistry 194, 47-57 (2005), N.H. Nickel, E. Terukov, eds. (Kluwer, Dordrecht, 2005), ISBN 1-4020-3474-1
[ | ]

257
D. Fritsch, R. Schmidt-Grund, H. Schmidt, C.M. Herzinger, M. Grundmann
Polarization-dependent optical transitions at the fundamental band gap and higher critical points of wurtzite ZnO
Proc. 5th Int.Conf. Numerical Simulation of Optoelectronic Devices (NUSOD '05), p. 69-70 (2005)
[ | ]

256
Report of The Physics Institutes of Universität Leipzig 2004
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

255
S. Jaensch, H. Schmidt, M. Grundmann
Quantitative scanning capacitance microscopy for controlling electrical properties below the 25 nm scale
VDI-Berichte 2005(Januar), 221-224 (2005)

254
M. Lorenz, H. Hochmuth, A. Jammoul, G. Ferro, Ch. Förster, J. Pezoldt, J. Zúñiga-Pérez, G. Benndorf, J. Lenzner, R. Schmidt-Grund, M. Grundmann
Luminescence of ZnO thin films grown by pulsed laser deposition on 3C-SiC buffered Si
Wissenschaftlich Technische Berichte des Forschungszentrums Rossendorf FZR 433, 74-82 (2005)
[ ]

253
M. Lorenz, H. Hochmuth, J. Lenzner, M. Brandt, H. von Wenckstern, G. Benndorf, M. Grundmann
ZnO thin films grown by pulsed laser deposition on 6H-SiC single crystals
Wissenschaftlich Technische Berichte des Forschungszentrums Rossendorf FZR 433, 57-62 (2005)
[ ]

252
M. Schubert, N. Ashkenov, T. Hofmann, M. Lorenz, H. Hochmuth, H. von Wenckstern, M. Grundmann, G. Wagner
Electro-optical properties of ZnO-BaTiO3-ZnO heterostructures grown by pulsed laser deposition

Ann. Phys. 13, 61-62 (2004)
[ | | IF: 1.51 ]

251
M. Lorenz, H. Hochmuth, R. Schmidt-Grund, E.M. Kaidashev, M. Grundmann
Advances of pulsed laser deposition of ZnO thin films

Ann. Phys. 13, 59-60 (2004)
[ | | IF: 1.51 ]

250
E. Guzman, H. Hochmuth, M. Lorenz, H. von Wenckstern, A. Rahm, E.M. Kaidashev, M. Ziese, A. Setzer, P. Esquinazi, A. Pöppl, D. Spemann, R. Pickenhain, H. Schmidt, M. Grundmann
Pulsed laser deposition of Fe- and Fe, Cu-doped ZnO thin films

Ann. Phys. 13, 57-58 (2004)
[ | | IF: 1.51 ]

249
M. Lorenz, J. Lenzner, E.M. Kaidashev, H. Hochmuth, M. Grundmann
Cathodoluminescence of selected single ZnO nanowires on sapphire

Ann. Phys. 13, 39-40 (2004)
[ | | IF: 1.51 ]

248
C. Bundesmann, M. Schubert, D. Spemann, A. Rahm, H. Hochmuth, M. Lorenz, M. Grundmann
Infrared dielectric function and phonon modes of Mg-rich cubic MgxZn1-xO (x > 0.67) thin films on sapphire (0001)

Appl. Phys. Lett. 85(6), 905-907 (2004)
[ | | IF: 3.794 ]

247
H. von Wenckstern, E.M. Kaidashev, M. Lorenz, H. Hochmuth, G. Biehne, J. Lenzner, V. Gottschalch, R. Pickenhain, M. Grundmann
Lateral homogeneity of Schottky contacts on n-type ZnO

Appl. Phys. Lett. 84(1), 79-81 (2004)
[ | | IF: 3.794 ]

246
T. Nobis, E.M. Kaidashev, A. Rahm, M. Lorenz, J. Lenzner, M. Grundmann
Spatially inhomogeneous impurity distribution in ZnO micropillars

Nano Lett. 4, 797-800 (2004)
[ | | IF: 13.025 ]

245
K. Goede, P. Busch, M. Grundmann
Binding specificity of a peptide on semiconductor surfaces

Nano Lett. 4, 2115-2120 (2004)
[ | | IF: 13.025 ]

244
D. Fritsch, H. Schmidt, M. Grundmann
Band dispersion relations of zinc-blende and wurtzite InN

Phys. Rev. B 69(16), 165204:1-5 (2004)
[ | | IF: 3.767 ]

243
T. Nobis, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann
Whispering gallery modes in nano-sized dielectric resonators with hexagonal cross section

Phys. Rev. Lett. 93(10), 103903:1-4 (2004)
[ | | extra | IF: 7.645 ]

242
R. Schmidt-Grund, M. Schubert, B. Rheinländer, D. Fritsch, H. Schmidt, E.M. Kaidashev, M. Lorenz, H. Hochmuth, M. Grundmann
UV-VUV Spectroscopic ellipsometry of ternary MgxZn1-xO (0 ≤ x ≤ 0.53) thin films

Thin Solid Films 455-456, 500-504 (2004)
[ | | IF: 1.604 ]

241
C. Bundesmann, N. Ashkenov, M. Schubert, A. Rahm, E.M. Kaidashev, M. Lorenz, M. Grundmann
Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry

Thin Solid Films 455-456, 161-166 (2004)
[ | | IF: 1.604 ]

240
Report of The Physics Institutes of Universität Leipzig 2003
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

239
M. Grundmann
Nanoscroll formation from strained layer heterostructures

Appl. Phys. Lett. 83(12), 2444-2446 (2003)
[ | | IF: 3.794 ]

238
C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, E.M. Kaidashev, M. Lorenz, M. Grundmann
Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga and Li

Appl. Phys. Lett. 83(10), 1974-1976 (2003)
[ | | IF: 3.794 ]

237
E.M. Kaidashev, M. Lorenz, H. von Wenckstern, J. Lenzner, G. Benndorf, A. Rahm, H.-C. Semmelhack, K.-H. Han, H. Hochmuth, C. Bundesmann, V. Riede, M. Grundmann
High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition

Appl. Phys. Lett. 82(22), 3901-3903 (2003)
[ | | IF: 3.794 ]

236
R. Schmidt, B. Rheinländer, M. Schubert, D. Spemann, T. Butz, J. Lenzner, E.M. Kaidashev, M. Lorenz, M. Grundmann
Dielectric functions (1 to 5 eV) of wurtzite MgxZn1-xO (0 ≤ x < 0.29) thin films

Appl. Phys. Lett. 82(14), 2260-2262 (2003)
[ | | IF: 3.794 ]

235
L.E. Vorobjev, S.N. Danilov, V.Yu. Panevin, N.K. Fedosov, D.A. Firsov, V.A. Shalygin, A.D. Andreev, N.N. Ledentsov, V.M. Ustinov, G.E. Cirlin, V.A. Egorov, A. Tonkikh, F.Fossard, A.Helman, Kh.Moumanis, F.H.Julien, A. Weber, M. Grundmann
Interband and intraband light absorption in InAs/GaAs quantum dots covered by InGaAs quantum wells

Proc. 26th Int. Conf. on the Physics of Semiconductors (ICPS-26), (Edinburgh, UK, 2002), IoP Conf. Ser. 171, P228:1-7 (2003), J.H. Davies, A.R. Long, eds. (IoP Publishing, Bristol), ISBN 978-0-7503-0924-0
[ ]

234
R. Schmidt, C. Bundesmann, N. Ashkenov, B. Rheinländer, M. Schubert, M. Lorenz, E.M. Kaidashev, D. Spemann, T. Butz, J. Lenzner, M. Grundmann
Optical properties of ternary MgZnO thin films

Proc. 26th Int. Conf. on the Physics of Semiconductors (ICPS-26), (Edinburgh, UK, 2002), IoP Conf. Ser. 171, P11:1-8 (2003), J.H. Davies, A.R. Long, eds. (IoP Publishing, Bristol), ISBN 978-0-7503-0924-0
[ ]

233
H. von Wenckstern, H. Schmidt, R. Pickenhain, M. Grundmann
Conduction band offset of pseudomorphic InAs/GaAs determined by capacitance spectroscopy

Proc. 26th Int. Conf. on the Physics of Semiconductors (ICPS-26), (Edinburgh, UK, 2002), IoP Conf. Ser. 171, H2:1-7 (2003), J.H. Davies, A.R. Long, eds. (IoP Publishing, Bristol), ISBN 978-0-7503-0924-0
[ ]

232
N. Ashkenov, G. Wagner, H. Neumann, B.N. Mbenkum, C. Bundesmann, V. Riede, M. Lorenz, E.M. Kaidashev, A. Kasic, M. Schubert, M. Grundmann
Infrared dielectric functions and phonon modes of high-quality ZnO films

J. Appl. Phys. 93(1), 126-133 (2003)
[ | | IF: 2.21 ]

231
D. Fritsch, H. Schmidt, M. Grundmann
Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN

Phys. Rev. B 67(23), 235205:1-13 (2003)
[ | | IF: 3.767 ]

230
M. Lorenz, E.M. Kaidashev, H. von Wenckstern, V. Riede, C. Bundesmann, D. Spemann, G. Benndorf, H. Hochmuth, A. Rahm, H.-C. Semmelhack, M. Grundmann
Optical and electrical properties of epitaxial (Mg,Cd)xZn1-xO, ZnO, and ZnO:(Ga,Al) thin films on c-plane sapphire grown by pulsed laser deposition

Sol. St. Electr. 47, 2205-2209 (2003)
[ | | IF: 1.482 ]

229
M. Lorenz, H. Hochmuth, M. Schallner, R. Heidinger, D. Spemann, M. Grundmann
Dielectric properties of Fe-doped BaxSr1-xTiO3 thin films on polycrystalline substrates at temperatures between

Sol. St. Electr. 47, 2199-2203 (2003)
[ | | IF: 1.482 ]

228
M. Lorenz, H. Hochmuth, M. Grundmann, E. Gaganidze, J. Halbritter
Microwave properties of epitaxial large-area Ca-doped YBa2Cu3O7-δ thin films on r-plane sapphire

Sol. St. Electr. 47, 2183-2186 (2003)
[ | | IF: 1.482 ]

227
Report of The Physics Institutes of Universität Leipzig 2002
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

226
M. Grundmann, R. Heitz, D. Bimberg
Comment on "Problems in recent analysis of injected carrier dynamics in semiconductor quantum dots" [Appl. Phys. Lett. 79, 3912 (2001)]

Appl. Phys. Lett. 81(3), 565 (1 page) (2002)
[ | | IF: 3.794 ]

225
C. Bundesmann, M. Schubert, D. Spemann, T. Butz, M. Lorenz, E.M. Kaidashev, M. Grundmann, N. Ashkenov, H. Neumann, G. Wagner
Infrared dielectric functions and phonon modes of wurtzite MgxZn1-xO (x≤0.2)

Appl. Phys. Lett. 81(13), 2376-2378 (2002)
[ | | IF: 3.794 ]

224
M. Grundmann, N.N. Ledentsov, F. Hopfer, F. Heinrichsdorff, F. Guffarth, D. Bimberg, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Yu.G. Musikhin, Zh.I. Alferov, J.A. Lott, N.D. Zhakarov, P. Werner
Long Wavelength Quantum Dot Lasers

J. Mat. Sci: Mat. Electr. 13, 643-647 (2002)
[ | | IF: 1.486 ]

223
T. Hofmann, M. Grundmann, C.M. Herzinger, M. Schubert, W. Grill
Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures

Proc. Mat. Res. Soc. 744, 277-282 (2002)
[ | ]

222
M. Lorenz, H. Hochmuth, D. Natusch, M. Grundmann
High-quality reproducible PLD Y-Ba-Cu-O: Ag thin films up to 4 inch diameter for microwave applications

Physica C 372, 587-589 (2002)
[ | | IF: 0.718 ]

221
L.E. Vorobjev, S.N. Danilov, A.V. Gluhovskoy, V.L. Zerova, E.A. Zibik, V.Y. Panevin, D.A. Firsov, V.A. Shalygin, A.D. Andreev, B.V. Volovik, A.E. Zhukov, N.N. Ledentsov, D.A. Livshits, V.M. Ustinov, Y.M. Shernyakov, A.F. Tsatsulnikov, A. Weber, M. Grundmann, S.R. Schmidt, A. Seilmeier, E. Towe, D. Pal
Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells
Izvestiya Akademii Nauk Seriya Fizicheskaya 66(2), 231-235 (2002)
[ ]

220
L.E. Vorobjev, A.V. Glukhovskoy, S.N. Danilov, V.Yu. Panevin, D.A. Firsov, N.K. Fedosov, V.A. Shalygin, A.D. Andreev, B.V. Volovik, N.N. Ledentsov, D.A. Livshits, V.M. Ustinov, A.F. Tsatsulnikov, Yu.M. Shernyakov, M. Grundmann, A. Weber, F. Fossard, F.H. Julien
Nonequilibrium spectroscopy of inter- and intraband transitions in quantum dot structures
Mat. Sci. Forum 384-385, 39-42 (2002), S. Asmontas, A. Dargys, H.G. Roskos, eds.
[ | ]

219
E. Towe, D. Pal, L.E. Vorobjev, A.V. Glukhovskoy, S.N. Danilov, V.L. Zerova, V.Y. Panevin, D.A. Firsov, V.A. Shalygin, G.G. Zegrya, A. Weber, M. Grundmann
Injection lasers based on intraband carrier transitions
Mat. Sci. Forum 384-385, 209-212 (2002), S. Asmontas, A. Dargys, H.G. Roskos, eds.
[ | ]

218
M. Grundmann
Theory of Quantum Dot Lasers
Nano-Optoelectronics, Concepts, Physics and Devices, p. 299-316 (2002), M. Grundmann, ed. (Springer, Berlin, 2002), ISBN 978-3-642-56149-8
[ | ]

217
M. Grundmann, ed.
 
Nano-Optoelectronics, Concepts, Physics and Devices (Springer, Berlin, 2002), ISBN 978-3-642-56149-8
[ | | extra ]

216
Report of The Institute for Experimental Physics II of Universität Leipzig 2001
 
Universität Leipzig, M. Grundmann, ed.
[ | link ]

215
D. Bimberg, M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, Ch. Ribbat, R. Sellin, Zh.I. Alferov, P.S. Kop'ev, M.V. Maximov, V.M. Ustinov, A.E. Zhukov, J.A. Lott
Quantum dot lasers: Theory and experiment

AIP Conf. Proc. 560, 178-197 (2001) (AIP Publishing LLC, New York)
[ | ]

214
R. Sellin, Ch. Ribbat, M. Grundmann, N.N. Ledentsov, D. Bimberg
Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers

Appl. Phys. Lett. 78, 1207-1209 (2001)
[ | | IF: 3.794 ]

213
A. Weber, M. Grundmann, N.N. Ledentsov
Comment on "Room-Temperature Long-Wavelength (λ=13.3 μm) unipolar quantum dot intersubband laser

Electr. Lett. 37, 96-97 (2001)
[ | | IF: 1.038 ]

212
Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg, N.A. Sobolev, M.C. Carmo
Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation

Electr. Lett. 37, 174-175 (2001)
[ | | IF: 1.038 ]

211
O. Stier, A. Schliwa, R. Heitz, M. Grundmann, D. Bimberg
Biexciton binding energy in InAs/GaAs quantum dots

Proc. 25th Int. Conf. on The Physics of Semiconductors (ICPS-25), (Osaka, Japan, 2000), Springer Proc. Physics 87(II), 1265:1-2 (2001) (Springer, Berlin), N. Miura, T. Ando, eds., ISBN 978-3-540-41778-1
[ ]

210
A. Weber, K. Goede, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov
Electrically and optically pumped mid-infrared emission from quantum dots

Proc. 25th Int. Conf. on The Physics of Semiconductors (ICPS-25), (Osaka, Japan, 2000), Springer Proc. Physics 87(II), 1157:1-2 (2001) (Springer, Berlin), N. Miura, T. Ando, eds., ISBN 978-3-540-41778-1
[ ]

209
L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, D. Bimberg
Effect of excited-state transitions on the threshold characteristics of a quantum dot laser

IEEE J. Quantum Electron. 37, 418-425 (2001)
[ | | IF: 1.83 ]

208
L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, D. Bimberg
Maximum modal gain of a self-assembled InAs/GaAs quantum dot laser

J. Appl. Phys. 90(3), 1666-1668 (2001)
[ | | IF: 2.21 ]

207
L.E. Vorobjev, S.N. Danilov, A.V. Glukhovskoy, V.L. Zerova, E.A. Zibik, V.Yu. Panevin, D.A. Firsov, V.A. Shalygin, A.D. Andreev, B.V. Volovik, A.E. Zhukov, N.N. Ledentsov, D.A. Livshits, V.M. Ustinov, Yu.M. Shernyakov, A.F. Tsatsulnikov, A. Weber, M. Grundmann, S.R. Schmidt, A. Seilmeier, E. Towe, D. Pal
Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells

Nanotechnology 12, 462-465 (2001)
[ | | IF: 3.842 ]

206
V.A. Shalygin, L.E. Vorobjev, A.V. Glukhovskoy, S.N. Danilov, V.Yu. Panevin, D.A. Firsov, B.V. Volovik, N.N. Ledentsov, D.A. Livshits, V.M. Ustinov, Yu.M. Shernyakov, A.F. Tsatsulnikov, A. Weber, M. Grundmann
Near and mid infrared spectroscopy of InGaAs/GaAs quantum dot structures

Nanotechnology 12, 447-449 (2001)
[ | | IF: 3.842 ]

205
K. Goede, A. Weber, F. Guffarth, C.M.A. Kapteyn, F. Heinrichsdorff, R. Heitz, D. Bimberg, M. Grundmann
Calorimetric investigation of intersublevel transitions in charged quantum dots

Phys. Rev. B 64(24), 245317:1-7 (2001)
[ | | IF: 3.767 ]

204
N.A. Sobolev, A. Cavaco, M.C. Carmo, M. Grundmann, F. Heinrichsdorff, D. Bimberg
Enhanced radiation hardness of InAs/GaAs quantum dot structures

Phys. Status Solidi B 224, 93-96 (2001)
[ | | IF: 1.522 ]

203
A. Weber, K. Goede, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov
Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots

Phys. Status Solidi B 224, 833-837 (2001)
[ | | IF: 1.522 ]

202
S. Bognár, M. Grundmann, D. Ouyang, R. Heitz, R. Sellin, D. Bimberg
Large gain in InAs/GaAs quantum dots

Phys. Status Solidi B 224, 823-826 (2001)
[ | | IF: 1.522 ]

201
Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg
High power quantum dot lasers at 1160 nm

Phys. Status Solidi B 224, 819-822 (2001)
[ | | IF: 1.522 ]

200
D. Bimberg, M. Grundmann, N.N. Ledentsov, M.H. Mao, Ch. Ribbat, R. Sellin, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, J.A. Lott
Novel infrared quantum dot lasers: Theory and reality

Phys. Status Solidi B 224, 787-796 (2001)
[ | | IF: 1.522 ]

199
A. Schliwa, O. Stier, R. Heitz, M. Grundmann, D. Bimberg
Exciton level crossing in coupled InAs/GaAs quantum dot pairs

Phys. Status Solidi B 224, 405-408 (2001)
[ | | IF: 1.522 ]

198
O. Stier, A. Schliwa, R. Heitz, M. Grundmann, D. Bimberg
Stability of biexcitons in pyramidal InAs/GaAs quantum dots

Phys. Status Solidi B 224, 115-118 (2001)
[ | | IF: 1.522 ]

197
M. Grundmann, A. Weber, K. Goede, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov
Mid-infrared properties of quantum dot lasers

Proc. SPIE 4598, 44-57 (2001)
[ | ]

196
M. Grundmann, D. Bimberg
Nanotechnologische Entwicklungen - Konvergenz mit den IuK Technologien
Jahrbuch Telekommunikation und Gesellschaft 2001 "Internet@Future: Technik, Anwendungen und Dienste der Zukunft" 9, 68 (2001) (H, Heidelberg, 2001)
[ ]

195
M. Grundmann
Feasibility of 5 Gbit/s wavelength division multiplexing using quantum dot lasers

Appl. Phys. Lett. 77, 4265-4267 (2000)
[ | | IF: 3.794 ]

194
M. Grundmann, A. Weber, K. Goede, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov
Mid-infrared emission from near-infrared quantum-dot lasers

Appl. Phys. Lett. 77, 4-6 (2000)
[ | | IF: 3.794 ]

193
M. Grundmann
How a quantum dot laser turns on

Appl. Phys. Lett. 77, 1428-1430 (2000)
[ | | IF: 3.794 ]

192
F. Heinrichsdorff, Ch. Ribbat, M. Grundmann, D. Bimberg
High power quantum dot lasers at 1100 nm

Appl. Phys. Lett. 76, 556-558 (2000)
[ | | IF: 3.794 ]

191
M. Grundmann, N.N. Ledentsov, F. Hopfer, F. Heinrichsdorff, F. Guffarth, D. Bimberg, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Yu.G. Musikhin, Zh.I. Alferov, J.A. Lott, N.D. Zhakharov, P. Werner
Quantum dots for GaAs-based surface emitting lasers at 1300 nm

Adv. Sol. St. Phys. 40, 589-597 (2000), B. Kramer, ed.
[ | ]

190
P. Werner, K. Scheerschmidt, N.D. Zacharov, R. Hillebrand, M. Grundmann, R. Schneider
Quantum Dot Structures in the InGaAs System Investigated by TEM Techniques
Cryst. Res. Technol. 35, 759-768 (2000)
[ | | IF: 1.12 ]

189
M. Grundmann
Relaxation oscillations of quantum dot lasers

Electr. Lett. 36, 1851-1852 (2000)
[ | | IF: 1.038 ]

188
N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, M.V. Maximov, Zh.I. Alferov, J.A. Lott
Quantum-dot heterostructure lasers

IEEE J. Sel. Top. Quantum Electr. 6, 439-451 (2000)
[ | | IF: 4.078 ]

187
R. Sellin, F. Heinrichsdorff, C. Ribbat, M. Grundmann, U.W. Pohl, D. Bimberg
Surface flattening during MOCVD of thin GaAs layers covering InGaAs quantum dots

J. Cryst. Growth 221, 581-585 (2000)
[ | | IF: 1.552 ]

186
M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, C. Ribbat, D. Bimberg, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Y.M. Shernyakov, D.A. Lifshits, V.M. Ustinov, Zh.I. Alferov
Progress in quantum dot lasers: 1100 nm, 1300 nm and high power applications

Jpn. J. Appl. Phys. 39(4B), 2341-2343 (2000)
[ | | IF: 1.067 ]

185
R. Heitz, F. Guffarth, I. Mukhametzhanov, M. Grundmann, A. Madhukar, D. Bimberg
Many-body effects on the optical spectra of InAs/GaAs quantum dots

Phys. Rev. B 62(24), 16881-16885 (2000)
[ | | IF: 3.767 ]

184
E. Martinet, M.-A. Dupertuis, F. Reinhardt, G. Biasiol, E. Kapon, O. Stier, M. Grundmann, D.Bimberg
Separation of strain and quantum-confinement effects in the optical spectra of quantum wires

Phys. Rev. B 61(7), 4488-4491 (2000)
[ | | IF: 3.767 ]

183
M. Grundmann, O. Stier, A. Schliwa, D. Bimberg
Electronic structure of cleaved-edge-overgrowth strain-induced quantum wires

Phys. Rev. B 61(3), 1744-1747 (2000)
[ | | IF: 3.767 ]

182
M. Grundmann, O. Stier, S. Bognár, C. Ribbat, F. Heinrichsdorff, D. Bimberg
Optical properties of self-organized quantum dots: Modeling and Experiments

Phys. Status Solidi A 178, 255-262 (2000)
[ | | IF: 1.648 ]

181
M. Grundmann, A. Krost
Atomic structure based simulation of X-ray scattering

Phys. Status Solidi B 218, 417-423 (2000)
[ | | IF: 1.522 ]

180
L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, D. Bimberg
Effect of excited-state transitions on the threshold characteristics of a quantum dot laser

Proc. SPIE 3944, 823-834 (2000)
[ | ]

179
D. Bimberg, M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Y.M. Shernyakov, B.V. Volovik, A.F. Tsatsulnikov, P.S. Kop'ev, Zh.I. Alferov
Quantum dot lasers: breakthrough in optoelectronics

Thin Solid Films 367, 235-249 (2000)
[ | | IF: 1.604 ]

178
D. Bimberg, N.N. Ledentsov, R. Sellin, Ch. Ribbat, M. Mao, M. Grundmann, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, Zh.I. Alferov, J.A. Lott
Quantum dot lasers
13th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS), p. 302-303 (2000)
[ | ]

177
M. Grundmann
Rechnet mit den Quanten!
 
7 hügel - Bilder und Zeichen des 21. Jahrhunderts VI, 74-78 (2000), G. Sievernich, H. Budde, eds. (Henschel, Berlin, 2000)
[ ]

176
Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg
High power quantum dot lasers at 1140 nm
IEEE 17th Int. Semiconductor Laser Conference, Conference Digest, p. 131-132 (2000)
[ | ]

175
M. Strassburg, O. Schulz, U.W. Pohl, M. Grundmann, D. Bimberg, S. Itoh, K. Makano, A. Ishibashi, M. Klude, D. Hommel
Index Guided II-VI Lasers with Low Threshold Current Density
Technical Program with Abstracts of the 42nd Electronic Materials Conference (Denver, CO, 2000), p. 81 (2000)
[ ]

174
M. Grundmann
Quantum dot based semiconductor laser diodes
Technical Program with Abstracts of the 42nd Electronic Materials Conference (Denver, CO, 2000), p. 14 (2000)
[ ]

173
M. Grundmann, F. Heinrichsdorff, Ch. Ribbat, M.-H. Mao, D. Bimberg
Quantum dot lasers: Recent progress in theoretical understanding and demonstration of high output power operation

Appl. Phys. B 69, 413-416 (1999)
[ | | IF: 1.782 ]

172
M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg
Diode Lasers Based on Quantum Dots

Adv. Sol. St. Phys. 38, 203-214 (1999), B. Kramer, ed.
[ | ]

171
R. Heitz, I. Mukhametzanov, H. Born, M. Grundmann, A. Hoffmann, A. Madhukar, D. Bimberg
Hot carrier relaxation in InAs/GaAs quantum dots

Physica B 272, 8-11 (1999)
[ | | IF: 1.327 ]

170
C.M.A. Kapteyn, M. Lion, F. Heinrichsdorff, R. Heitz, M. Grundmann, D. Bimberg
Carrier emission processes in InAs quantum dots

Physica E 7, 388-392 (1999)
[ | | IF: 1.522 ]

169
M. Grundmann
The present status of quantum dot lasers

Physica E 5, 167-184 (1999)
[ | | IF: 1.522 ]

168
C.M.A. Kapteyn, F. Heinrichsdorff, O. Stier, R. Heitz, M. Grundmann, N.D. Zakharov, D. Bimberg
Electron escape from InAs quantum dots

Phys. Rev. B 60(20), 14265-14268 (1999)
[ | | IF: 3.767 ]

167
O. Stier, M. Grundmann, D. Bimberg
Electronic and optical properties of strained quantum dots modeled by 8-band k

Phys. Rev. B 59(8), 5688-5701 (1999)
[ | | IF: 3.767 ]

166
M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, C. Ribbat, D. Bimberg, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, Zh.I. Alferov
Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications
Extended Abstracts of the 1999 Int. Conf. on Solid State Devices and Materials (ssdm 99, Tokyo), p. 412-413 (1999)
[ | ]

165
A. Weber, K. Goede, M. Grundmann, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov
Spontaneous mid-infrared emission from quantum dot lasers
Proc. 3rd Conf. on Mid-infrared Optical Materials and Devices (MIOMD-3) (Aachen, Germany, 1999), p. O15:1-2 (1999)
[ ]

164
M. Grundmann, Ch. Ribbat, M.-H. Mao, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, A.Yu. Egorov, D.A. Lifshits, M.V. Maximov, Yu.M. Shernyakov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov
4 Watt high power quantum dot lasers
Technical Program with Abstracts of the 41st Electronic Materials Conference (Santa Barbara, CA, 1999), p. WED-AM 2 (1999)
[ ]

163
D. Bimberg, M. Grundmann, N.N. Ledentsov
Quantum Dot Heterostructures
 
(John Wiley & Sons Ltd., Chichester, 1998), ISBN 978-0-471-97388-1
[ link | extra ]

162
A.F. Tsatsul'nikov, A.Yu. Egorov, P.S. Kop'ev, A.R. Kovsh, N.N. Ledentsov, M.V. Maximov, A.A. Suvorova, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, M. Grundmann, D. Bimberg, Zh.I. Alferov
Optical properties of InAlAs quantum dots in an AlGaAs matrix

Appl. Surf. Sci. 123/124, 381-384 (1998)
[ | | IF: 2.112 ]

161
V. Türck, F. Heinrichsdorff, M. Veit, R. Heitz, M. Grundmann, A. Krost, D. Bimberg
Correlation of InGaAs/GaAs quantum dot and wetting layer formation

Appl. Surf. Sci. 123/124, 352-355 (1998)
[ | | IF: 2.112 ]

160
O. Stier, M. Grundmann, D. Bimberg
Inter- and intraband transitions in strained quantum dots modeled in eight-band k

Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998), p. VII B70:1-4 (1998) (World Scientific, Singapore), D. Gershoni, ed.
[ | ]

159
E. Martinet, O. Stier, M. Grundmann, M.A. Dupertuis, A. Gustafsson, A. Rudra, F. Reinhardt, E. Kapon
Separation of strain and confinement effects in the photoluminescence excitation spectra of InGaAs/AlGaAs V-groove quantum wires

Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998), p. VII B44:1-4 (1998) (World Scientific, Singapore), D. Gershoni, ed.
[ | ]

158
M. Grundmann, R. Heitz, D. Bimberg, J.H.H. Sandmann, J. Feldmann
Modeling of Quantum Dot Optical Properties using Microstates

Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998), p. VII B3:1-4 (1998) (World Scientific, Singapore), D. Gershoni, ed.
[ | ]

157
V.P. Kalosha, G.Ya. Slepyan, S.A. Maksimenko, O. Stier, M. Grundmann, N.N. Ledentsov, D. Bimberg
Effective-medium approach for active medium quantum dot laser

Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998), p. VII B29:1-4 (1998) (World Scientific, Singapore), D. Gershoni, ed.
[ | ]

156
C.M.A. Kapteyn, F. Heinrichsdorff, O. Stier, M. Grundmann, D. Bimberg
Electron emission from InAs quantum dots

Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998), p. VII A3:1-4 (1998) (World Scientific, Singapore), D. Gershoni, ed.
[ | ]

155
A.F. Tsatsul'nikov, G.E. Cirlin, A.Yu. Egorov, A.O. Golubok, P.S. Kop'ev, A.R. Kovsh, N.N. Ledentsov, S.A. Masalov, M.V. Maximov, V.N. Petrov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, R. Heitz, P. Werner, M. Grundmann, D. Bimberg, Zh.I. Alferov
Formation of InAs quantum dots on a silicon (100) surface

Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998), p. II E18:1-4 (1998) (World Scientific, Singapore), D. Gershoni, ed.
[ | ]

154
F. Heinrichsdorff, M. Grundmann, O. Stier, A. Krost, D. Bimberg
Influence of In/Ga intermixing on the optical properties of InGaAs/GaAs quantum dots

J. Cryst. Growth 195, 540-545 (1998)
[ | | IF: 1.552 ]

153
J. Rockenberger, L. Tröger, A.L. Rogach, M. Tischer, M. Grundmann, A. Eychmüller, H. Weller
The Contribution of Particle Core and Surface to Strain, Disorder and Vibrations in Thiolcapped CdTe Nanocrystals

J. Chem. Phys. 108, 7807-7815 (1998)
[ | ]

152
A.F. Tsatsul'nikov, S.V. Ivanov, P.S. Kop'ev, A.K. Kryganovskii, N.N. Ledentsov, M.V. Maximov, B.Ya. Mel'tser, P.V. Nekludov, A.A. Suvorova, A.N. Titkov, B.V. Volovik, M. Grundmann, D.Bimberg, Zh.I. Alferov
Formation of InSb quantum dots in a GaSb matrix

J. Electr. Mat. 27, 414-417 (1998)
[ | | IF: 1.635 ]

151
H. Nakashima, T. Kato, K. Maehashi, T. Nishida, Y. Inoue, T. Yoshiji, T. Takeuchi, K. Inoue, P. Fischer, J. Christen, M. Grundmann, D. Bimberg
Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE

Mat. Sci. Engin. B 51, 229-232 (1998)
[ | | IF: 2.331 ]

150
D. Bimberg, M. Grundmann, N.N. Ledentsov
Growth, spectroscopy and laser application of self-ordered III-V quantum dots

MRS Bull. 2(3), 31-34 (1998)
[ | | IF: 5.024 ]

149
D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, M.V. Maximov, Zh.I. Alferov, J.A. Lott
Application of self-organized quantum dots to edge emitting and vertical cavity lasers

Physica E 3, 129-136 (1998)
[ | | IF: 1.522 ]

148
M. Grundmann, O. Stier, D. Bimberg
Electronic states in strained cleaved edge overgrowth quantum wires and quantum dots

Phys. Rev. B 58(16), 10557-10561 (1998)
[ | | IF: 3.767 ]

147
R. Heitz, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, A. Hoffmann, A. Madhukar, D. Bimberg
Excited states and energy relaxation in stacked InAs/GaAs quantum dots

Phys. Rev. B 57(15), 9050-9060 (1998)
[ | | IF: 3.767 ]

146
F. Hatami, M. Grundmann, N.N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S.S. Ruvimov, P. Werner, S.V. Ivanov, B.Ya. Meltser, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov
Carrier Dynamics in Type-II GaSb/GaAs Quantum Dots

Phys. Rev. B 57(8), 4635-4641 (1998)
[ | | extra | IF: 3.767 ]

145
D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J. Lott
Edge and vertical cavity surface emitting InAs quantum dot lasers

Sol. St. Electr. 42, 1433-1437 (1998)
[ | | IF: 1.482 ]

144
G.E. Cirlin, V.G. Dubrovskii, V.N. Petrov, N.K. Polyakov, N.P. Korneeva, V.N. Demidov, A.O. Golubok, S.A. Masalov, D.V. Kurochkin, O.M. Gorbenko, N.I. Komyak, V.M. Ustinov, A.Yu. Egorov, A.R. Kovsh, M.V. Maximov, A.F. Tsatsul'nikov, B.V. Volovik, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, M. Grundmann, D. Bimberg
Formation of InAs quantum dots on silicon (100) surface

Semic. Sci. Technol. 13(11), 1262-1265 (1998)
[ | | IF: 2.098 ]

143
M. Grundmann, N.N. Ledentsov, N. Kirstaedter, F. Heinrichsdorff, A. Krost, D. Bimberg, A.O. Kosogov, S.S. Ruvimov, P. Werner, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov
Semiconductor Quantum Dots for Application in Diode Lasers

Thin Solid Films 318, 83-87 (1998)
[ | | IF: 1.604 ]

142
J. Rockenberger, L. Tröger, A.L. Rogach, M. Tischer, M. Grundmann, H. Weller, A. Eychmüller
An EXAFS study on thiolcapped CdTe nanocrystals
 
Ber. Bunsenges. Phys. Chem. 102, 1561-1564 (1998)
[ | ]

141
D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff
Competitive Vertical Cavity and Edge Emitting Quantum Dot Lasers
Conf. on Lasers and Electro-Optics Europe (CLEO/Europe), p. 63 (1998)
[ | ]

140
M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg
Neuartige Halbleiterlaser auf der Basis von Quantenpunkten
Laser und Optoelektronik 30, 70-77 (1998)
[ ]

139
A.F. Tsatsul'nikov, S.V Ivanov, P.S. Kop'ev, I.L. Krestnikov, A.K. Kryganovskii, N.N. Ledentsov, M.V. Maximov, B.Ya. Mel'tser, P.V. Nekludov, A.A. Suvorova, A.N. Titkov, B.V. Volovik, M. Grundmann, D. Bimberg, Zh.I. Alferov
Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy
Microelectr. Engin. 43-44, 85-90 (1998)
[ | ]

138
A.F. Tsatsul'nikov, M.V. Belousov, N.A. Bert, A.Yu. Egorov, P.S. Kop'ev, A.R. Kovsh, I.L. Krestnikov, N.N. Ledentsov, M.V. Maximov, A.A. Suvorova, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, M. Grundmann, D. Bimberg, Zh.I. Alferov
Lateral association of vertically-coupled quantum dots
Microelectr. Engin. 43, 37-43 (1998)
[ | ]

137
M. Grundmann, R. Heitz, D. Bimberg
Carrier statistics in quantum-dot lasers
Physics of the Solid State 40(5), 772-774 (1998)
[ | ]

136
L. Finger, M. Nishioka, R. Hogg, F. Heinrichsdorff, M. Grundmann, D. Bimberg, Y. Arakawa
Modification of energy relaxation of InGaAs quantum dots by post growth annealing
Proc. 10th Int. Conf. on Indium Phosphide an Related Materials (IPRM'98), IEEE Catalog #98CH36129, p. 151-154 (1998)
[ | ]

135
M. Grundmann, N.N. Ledentsov, F. Heinrichsdorff, M.-H. Mao, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott
InAs/GaAs Quantum Dot Injection Lasers
Trends in Optics and Photonics Series 18, 34-38 (1998) (The Optical Society of America, Washington, D.C., 1998)
[ | ]

134
A.A. Darhuber, V. Holy, J. Stangl, G. Bauer, A. Krost, F. Heinrichsdorff, M. Grundmann, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, A.O. Kosogov, P. Werner
Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution X-ray diffraction

Appl. Phys. Lett. 70, 955-957 (1997)
[ | | IF: 3.794 ]

133
M. Kappelt, V. Türck, M. Grundmann, H. Cerva, D. Bimberg
Low pressure metal-organic chemical vapor deposition of InP/InAlAs/InGaAs quantum wires

J. Cryst. Growth 170, 590-594 (1997)
[ | | IF: 1.552 ]

132
F. Heinrichsdorff, A. Krost, M. Grundmann, D. Bimberg, F. Bertram, J. Christen, A. Kosogov, P. Werner
Self Organization Phenomena of InGaAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition

J. Cryst. Growth 170, 568-573 (1997)
[ | | IF: 1.552 ]

131
M. Grundmann, D. Bimberg
Gain and Threshold of Quantum Dot Lasers: Theory and Comparison with Experiments

Jpn. J. Appl. Phys. 36(6B), 4181-4187 (1997)
[ | | IF: 1.067 ]

130
F. Heinrichsdorff, A. Krost, N. Kirstaedter, M.-H. Mao, M. Grundmann, D. Bimberg, A.O. Kosogov, P. Werner
InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

Jpn. J. Appl. Phys. 36(6B), 4129-4133 (1997)
[ | | IF: 1.067 ]

129
A.A. Darhuber, V. Holy, J. Stangl, G. Bauer, A. Krost, M. Grundmann, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, A.O. Kosogov, P. Werner
High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots

Jpn. J. Appl. Phys. 36(6B), 4084-4087 (1997)
[ | | IF: 1.067 ]

128
D. Bimberg, N.N. Ledentsov, M. Grundmann, R. Heitz, J. Böhrer, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov
Luminescence properties of semiconductor quantum dots

J. Lumin. 72-74, 34-37 (1997)
[ | | IF: 2.144 ]

127
N.N. Ledentsov, N. Kirstaedter, M. Grundmann, D. Bimberg, V.M. Ustinov, I.V. Kochnev, P.S. Kop'ev, Zh.I. Alferov
Three-dimensional arrays of self-ordered quantum dots for laser applications

Microelectr. J. 28, 915-931 (1997)
[ | | IF: 0.912 ]

126
M. Grundmann, D. Bimberg
Selbstordnende Quantenpunkte: Vom Festk

Physikal. Bl. 53(6), 517-522 (1997)
[ | ]

125
M. Grundmann, R. Heitz, D. Bimberg
New approach to modeling carrier distribution in quantum dot ensembles: Gain and threshold of QD lasers and impact of phonon bottleneck

Physica E 2, 725-728 (1997)
[ | | IF: 1.522 ]

124
R. Heitz, M. Veit, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, N.N. Ledentsov, A. Hoffmann, A. Madhukar, D. Bimberg, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov
Hot Carrier Relaxation in InAs/GaAs Quantum Dots

Physica E 2, 578-582 (1997)
[ | | IF: 1.522 ]

123
M. Grundmann, D. Bimberg
Theory of random population for quantum dots

Phys. Rev. B 55(15), 9740-9745 (1997)
[ | | IF: 3.767 ]

122
V. Türck, O. Stier, F. Heinrichsdorff, M. Grundmann, D. Bimberg
Quantum wires in staggered band line-up single heterostructures with corrugated interfaces

Phys. Rev. B 55(12), 7733-7742 (1997)
[ | | IF: 3.767 ]

121
M. Grundmann, D. Bimberg
Formation of quantum dots in twofold cleaved edge overgrowth

Phys. Rev. B 55(7), 4054-4056 (1997)
[ | | IF: 3.767 ]

120
M. Grundmann, D. Bimberg
Theory of quantum dot laser gain and threshold: Correlated versus uncorrelated electron and hole capture

Phys. Status Solidi A 164, 297-300 (1997)
[ | | IF: 1.648 ]

119
M. Grundmann, R. Heitz, D. Bimberg, J.H.H. Sandmann, J. Feldmann
Carrier Dynamics in Quantum Dots: Modeling with Master Equations for the Transitions between Micro-states

Phys. Status Solidi B 203, 121-132 (1997)
[ | | IF: 1.522 ]

118
M. Takeuchi, T. Takeuchi, Y. Inoue, T. Kato, K. Inoue, H. Nakashima, K. Maehashi, P. Fischer, J. Christen, M. Grundmann, D. Bimberg
Uniform GaAs quantum wires formed on vicinal GaAs(110) surfaces by two-step MBE growth

Superlatt. Microstr. 22(1), 43-49 (1997)
[ | | IF: 1.564 ]

117
A.A. Darhuber, J. Stangl, V. Holy, G. Bauer, A. Krost, M. Grundmann, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, A.O. Kosogov, P. Werner
Structural Characterization of Self-assembled Quantum Dot structures by X-ray Diffraction Technique

Thin Solid Films 306, 198-204 (1997)
[ | | IF: 1.604 ]

116
D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott
Edge and surface emitting quantum dot lasers
Int. Electron Devices Meeting 1997 (IEDM-97), Technical Digest, IEEE Catalog #97CH36103, p. 381 (1997)
[ | ]

115
V.A. Shchukin, N.N. Ledentsov, M. Grundmann, D. Bimberg
Self-Ordering of Nanostructures on Semiconductor Surfaces
 
NATO ASI Series, Series E: Applied Sciences 344, 257 (1997), G. Abstreiter, A. Aydinli, J.-P. Leburton, eds. (Kluwer, Dordrecht, 1997), ISBN 978-0-7923-4728-6
[ link ]

114
R. Heitz, M. Veit, M. Grundmann, N.N. Ledentsov, A. Hoffmann, D. Bimberg, A. Kalburge, Q. Xie, P. Chen, A. Madhukar, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov
Carrier capture and relaxation processes in InAs/GaAs quantum dots
Phys. Low-Dim. Struct. 11/12, 1 (1997)

113
P. Fischer, J. Christen, M. Takeuchi, H. Nakashima, K. Maehashi, K. Inoue, G. Austing, M. Grundmann, D. Bimberg
Luminescence characterization of selforganized GaAs quantum wires: carrier capture and thermalization
Proc. 4th Int. Symp. on Quantum Confinement, PV 97-11, ISBN 1-56677-138-2, p. 366 (1997) (The Electrochemical Society, Pennington, 1997)

112
D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kopev, Zh.I. Alferov, J.A. Lott
Fabry-Perot and vertical cavity surface emitting InAs quantum dot lasers
Proc. IEEE 24th Int. Symp. on Compound Semiconductors, p. 547-552 (1997)
[ | ]

111
M. Kappelt, M. Grundmann, A. Krost, V. Türck, D. Bimberg
InGaAs quantum wires grown by low pressure metal-organic chemical vapor deposition on InP V-grooves

Appl. Phys. Lett. 68, 3596-3598 (1996)
[ | | IF: 3.794 ]

110
F. Heinrichsdorff, M. Grundmann, A. Krost, D. Bimberg, A. Kosogov, P. Werner
Self-organization processes in InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

Appl. Phys. Lett. 68, 3284-3286 (1996)
[ | | IF: 3.794 ]

109
M. Herrscher, M. Grundmann, E. Dröge, St. Kollakowski, E.H. Böttcher, D. Bimberg
Epitaxial liftoff InGaAs/InP MSM photodetectors on Si

Electr. Lett. 31, 1383-1384 (1996)
[ | | IF: 1.038 ]

108
M. Lowisch, M. Rabe, N. Hoffmann, R. Mitdank, B. Stegemann, F. Henneberger, M. Grundmann, V. Türck, D. Bimberg
Zero-dimensional excitons in (Zn,Cd)Se quantum structures

Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996), p. 1457-1460 (1996) (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds.
[ ]

107
R. Heitz, A. Kalburge, Q. Xie, M. Veit, M. Grundmann, P. Chen, A. Madhukar, D. Bimberg
Energy relaxation in InAs/GaAs quantum dots

Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996), p. 1425-1428 (1996) (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds.
[ ]

106
F. Heinrichsdorff, A. Krost, M. Grundmann, R. Heitz, D. Bimberg, A. Kosogov, P. Werner, F. Bertram, J. Christen
Kinetically and thermodynamically induced self-organization effects in the growth of quantum dots by MOCVD

Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996), p. 1321-1324 (1996) (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds.
[ ]

105
A.A. Darhuber, J. Stangl, G. Bauer, A. Krost, F. Heinrichsdorff, M. Grundmann, D. Bimberg
Structural characterization of single and multiple layers of self-assembled InGaAs quantum dots by high resolution X-ray diffraction reflectivity

Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996), p. 1293-1296 (1996) (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds.
[ ]

104
O. Stier, M. Grundmann, D. Bimberg
Eight-band k.p analysis of pseudomorphic quantum wires

Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996), p. 1177-1180 (1996) (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds.
[ ]

103
L. Parthier, R. Rogaschewski, M. von Ortenberg, V. Rossin, F. Henneberger, M. Grundmann, D. Bimberg
In-situ growth and characterization of ZnSe quantum wires on patterned GaAs

Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996), p. 1149-1152 (1996) (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds.
[ ]

102
M. Kuttler, M. Grundmann, R. Heitz, U.W. Pohl, D. Bimberg, H. Stanzl, B. Hahn, W. Gebhardt
Diffusion induced disordering (DID) in ZnSSe/ZnSe superlattices

J. Cryst. Growth 159, 514-517 (1996)
[ | | IF: 1.552 ]

101
D. Bimberg, N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O.G. Schmidt, M.H. Mao, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov, S.S. Ruvimov, U. Gösele, J. Heydenreich
InAs/GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization properties

Jpn. J. Appl. Phys. 35, 1311-1319 (1996)
[ | | IF: 1.067 ]

100
X. Yang, L.J. Brillson, A.D. Raisanen, L. Vanzetti, A. Bonanni, A. Franciosi, M. Grundmann, D. Bimberg
Evolution of deep levels and internal photoemission with annealing temperature at ZnSe/GaAs interfaces

J. Vac. Sci. Technol. B 14, 2961-2966 (1996)
[ | | IF: 1.267 ]

99
S. Ruvimov, Z. Liliental-Weber, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, P.S. Kop'ev, Zh.I. Alferov, K. Scheerschmidt, U. Gösele
TEM Structural Characterization of nm-Scale Islands in Highly Mismatched Systems

Proc. Mat. Res. Soc. 421, 383-388 (1996)
[ | ]

98
H. Nakashima, M. Takeuchi, K. Inoue, T. Takeuchi, Y. Inoue, P. Fischer, J. Christen, M. Grundmann, D. Bimberg
Size-dependent luminescence of GaAs quantum wires on vicinal GaAs (110) surfaces with giant steps formed by MBE

Physica B 227, 291-294 (1996)
[ | | IF: 1.327 ]

97
M. Lowisch, M. Rabe, B. Stegemann, F. Henneberger, M. Grundmann, V. Türck, D. Bimberg
Zero-dimensional excitons in (Zn,Cd)Se quantum structures

Phys. Rev. B 54(16), R11074-R11077 (1996)
[ | | IF: 3.767 ]

96
N.N. Ledentsov, V.A. Shchukin, M. Grundmann, N. Kirstaedter, J. Böhrer, O. Schmidt, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, S.V. Zaitsev, N.Yu. Gordeev, Zh.I. Alferov, A.I. Borovkov, A.O. Kosogov, S.S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich
Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth

Phys. Rev. B 54(12), 8743-8750 (1996)
[ | | IF: 3.767 ]

95
M. Grundmann, N.N. Ledentsov, O. Stier, J. Böhrer, D. Bimberg, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov
Nature of optical transitions in self-organized InAs/GaAs quantum dots

Phys. Rev. B 53(16), R10509-R10511 (1996)
[ | | IF: 3.767 ]

94
N.N. Ledentsov, J. Böhrer, M. Beer, F. Heinrichsdorff, M. Grundmann, D. Bimberg, S.V. Ivanov, B.Ya. Meltser, I.N. Yassievich, N.A. Falev, P.S. Kop'ev, Zh.I. Alferov
Radiative states in type-II GaSb/GaAs quantum wells

Phys. Rev. B 52(19), 14058-14066 (1996)
[ | | IF: 3.767 ]

93
D. Bimberg, N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O.G. Schmidt, M.H. Mao, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov, S.S. Ruvimov, U. Gösele, J. Heydenreich
InAs-GaAs Quantum Dots: From Growth to Lasers

Phys. Status Solidi B 194, 159-173 (1996)
[ | | IF: 1.522 ]

92
M. Grundmann, R. Heitz, N. Ledentsov, O. Stier, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, S.S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich
Electronic Structure and Energy Relaxation in Strained InAs/GaAs Quantum Pyramids

Superlatt. Microstr. 19(2), 81-95 (1996)
[ | | IF: 1.564 ]

91
R. Heitz, M. Grundmann, N.N. Ledentsov, L. Eckey, M. Veit, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop’ev, Zh.I. Alferov
Exciton relaxation in self-organized InAs/GaAs quantum dots

Surf. Sci. 361/362, 770-773 (1996)
[ | | IF: 1.838 ]

90
G.E. Cirlin, G.M. Guryanov, V.N. Petrov, N.K. Polyakov, A.O. Golubok, S.Ya. Tipissev, V.B. Gubanov, Yu.B. Samsonenko, N.N. Ledentsov, V.A. Shchukin, M. Grundmann, D. Bimberg, Zh.I. Alferov
STM and RHEED study of InGaAs/GaAs quantum dots obtained by submonolayer epitaxial techniques

Surf. Sci. 352-354, 651-655 (1996)
[ | | IF: 1.838 ]

89
G.E. Cirlin, G.M. Guryanov, A.O. Golubok, S.Ya. Tipissev, N.N. Ledentsov, V.A. Shchukin, M. Grundmann, D. Bimberg, Zh.I. Alferov
An intermediate (1.0-1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy

Surf. Sci. 352-354, 646-650 (1996)
[ | | IF: 1.838 ]

88
V.A. Shchukin, N.N. Ledentsov, M. Grundmann, P.S. Kop’ev, D. Bimberg
Strain-induced formation and tuning of ordered nanostructures on crystal surfaces

Surf. Sci. 352-354, 117-122 (1996)
[ | | IF: 1.838 ]

87
N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O. Schmidt, R. Heitz, J. Böhrer, D. Bimberg, V.M. Ustinov, V.A. Shchukin, A.Yu. Egorov, A.E. Zhukov, S. Zaitsev, P.S. Kop'ev, Zh.I. Alferov, S.S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich
Ordered Arrays of Quantum Dots: Formation, Electronic Spectra and Relaxation Phenomena

Sol. St. Electr. 40, 785-798 (1996)
[ | | IF: 1.482 ]

86
H. Nakashima, M. Takeuchi, K. Kimura, M. Iwane, H.K. Huang, K. Inoue, J. Christen, M. Grundmann, D. Bimberg
Photo- and cathodoluminescence of AlGaAs single quantum wires on vicinal GaAs (110) surfaces

Sol. St. Electr. 40, 319-322 (1996)
[ | | IF: 1.482 ]

85
M. Kappelt, V. Türck, M. Grundmann, H. Cerva, D. Bimberg
InP/InAlAs/InGaAs quantum wires
III-Vs Review 9(6), 32-38 (1996)
[ | ]

84
M. Grundmann, N.N. Ledentsov, R. Heitz, O. Stier, N. Kirstaedter, D. Bimberg, S. Ruvimov, A.O. Kosogov, P. Werner, J. Heydenreich, U. Gösele, V.M. Ustinov, M. Maximov, A.Yu. Egorov, P.S. Kop'ev, Zh.I. Alferov
InAs/GaAs Quantum Dots: Single Sheets, Stacked Dots and Vertically Coupled Dots
Proc. 3rd Int. Symp. on Quantum Confinement (ECS-188, Chicago, USA), PV 75-17 (The Electrochemical Society, Pennington, USA), p. 80-83 (1996)
[ ]

83
N. Kirstaedter, O. Schmidt, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov, A.O. Kosogov, U. Gösele, J. Heydenreich
Static and dynamic properties of (InGa)As/GaAs quantum dot lasers
Proc. 8th Annual Meeting of IEEE Lasers and Electro-Optics Society (LEOS '95), IEEE Catalog #95CH35739, ISBN 0-7803-2450-1 1, 290-291 (1996)
[ | ]

82
M. Kappelt, V. Türck, M. Grundmann, H. Cerva, D. Bimberg
InP/InAlAs/InGaAs quantum wires
Proc. 8th Int. Conf. on Indium Phosphide an Related Materials (IPRM-8), IEEE Catalog #96CH35930, Library of Congress #96-75713, p. 757-760 (1996)
[ | ]

81
M. Grundmann, N.N. Ledentsov, R. Heitz, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov, A.O. Kosogov, P. Werner, J. Heydenreich, U. Gösele
Growth, Characterization, Theory and Lasing of Vertically Stacked Quantum Dots
Proc. 8th Int. Conf. on Indium Phosphide an Related Materials (IPRM-8), IEEE Catalog #96CH35930, Library of Congress #96-75713, p. 738-741 (1996)
[ | ]

80
M. Grundmann
Pseudomorphe Quantenpunkte
PTB-Bericht PTB-E-53 - Niederdimensionale Quantenstrukturen und Materialien für blaue Lichtquellen, p. 2-18 (1996), A. Schlachetzki, H. Bachmair, eds. (PTB, Braunschweig, 1996), ISBN 3-89429-782-4
[ | link ]

79
D. Bimberg, M. Grundmann, N.N. Ledentsov
Quantenpunkt-Laser
 
Spektrum der Wissenschaft 11, 64-68 (1996)
[ | link ]

78
M. Grundmann, N.N. Ledentsov, O. Stier, D. Bimberg, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov
Excited states in self-organized InAs/GaAs quantum dots: Theory and experiment

Appl. Phys. Lett. 68, 979-981 (1995)
[ | | IF: 3.794 ]

77
R. Heitz, M. Grundmann, N.N. Ledentsov, L. Eckey, M. Veit, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov
Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots

Appl. Phys. Lett. 68, 361-363 (1995)
[ | | IF: 3.794 ]

76
G.E. Cirlin, G.M. Guryanov, A.O. Golubok, S.Ya. Tipissev, N.N. Ledentsov, P.S. Kop'ev, M. Grundmann, D. Bimberg
Ordering Phenomena in InAs Strained Layer Morphological Transformation on GaAs (100) Surface

Appl. Phys. Lett. 67, 97-99 (1995)
[ | | IF: 3.794 ]

75
F. Hatami, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, D. Bimberg, S.S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich
Radiative Recombination in Type-II GaSb/GaAs Quantum Dots

Appl. Phys. Lett. 67, 656-658 (1995)
[ | | IF: 3.794 ]

74
V. Türck, O. Stier, F. Heinrichsdorff, M. Grundmann, D. Bimberg
Electron Quantum Wires in Type II Single Heterostructures on Nonplanar Substrates

Appl. Phys. Lett. 67, 1712-1714 (1995)
[ | | IF: 3.794 ]

73
M. Grundmann
Pseudomorphic InAs/GaAs Quantum Dots on Low Index Planes

Adv. Sol. St. Phys. 35, 123-154 (1995)
[ | ]

72
N.N. Ledentsov, M. Grundmann, N. Kirstaedter, J. Christen, R. Heitz, J. Böhrer, F. Heinrichsdorff, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V.M. Ustinov, A.Yu. Egorov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov
Luminescence and Structural Properties of (In,Ga)As/GaAs Quantum Dots

Proc. 22nd Int. Conf. on the Physics of Semiconductors (ICPS-22), (Vancouver, Canada, 1994) 3, 1855-1858 (1995) (World Scientific, Singapore), D.J. Lockwood, ed.
[ | ]

71
J. Christen, M. Grundmann, M. Joschko, D. Bimberg, E. Kapon
Cooling of 1-dimensional Carriers via Inter- and Intrasubband Relaxation in GaAs Quantum Wires

Proc. 22nd Int. Conf. on the Physics of Semiconductors (ICPS-22), (Vancouver, Canada, 1994) 2, 1759-1762 (1995) (World Scientific, Singapore), D.J. Lockwood, ed.
[ | ]

70
M. Grundmann, J. Christen, M. Joschko, D. Bimberg, E. Kapon
Bandgap Renormalization in Quantum Wires

Proc. 22nd Int. Conf. on the Physics of Semiconductors (ICPS-22), (Vancouver, Canada, 1994) 2, 1675-1678 (1995) (World Scientific, Singapore), D.J. Lockwood, ed.
[ | ]

69
N.N. Ledentsov, J. Böhrer, M. Beer, M. Grundmann, F. Heinrichsdorff, D. Bimberg, S.V. Ivanov, B.Ya. Meltser, I.N. Yassievich, N.A. Faleev, P.S. Kop'ev, Zh.I. Alferov
Type-II Heterostructures based on GaSb Sheets in a GaAs Matrix

Proc. 22nd Int. Conf. on the Physics of Semiconductors (ICPS-22), (Vancouver, Canada, 1994) 2, 1616-1619 (1995) (World Scientific, Singapore), D.J. Lockwood, ed.
[ | ]

68
R.F. Schnabel, M. Grundmann, R. Engelhardt, J. Oertel, A. Krost, D. Bimberg, R. Opitz, M. Schmidbauer, R. Köhler
High Quantum Efficiency InP-Mesas Grown by Hybrid Epitaxy on Si Substrates

J. Cryst. Growth 156, 337-342 (1995)
[ | | IF: 1.552 ]

67
R.F. Schnabel, A. Krost, M. Grundmann, D. Bimberg, H. Cerva
Maskless Selective Area Growth of InP on sub-

J. Electr. Mat. 24, 1625-1629 (1995)
[ | | IF: 1.635 ]

66
H. Nakashima, M. Takeuchi, K. Sato, K. Shiba, H.K. Huang, K. Maehashi, K. Inoue, J. Christen, M. Grundmann, D. Bimberg
Formation of AlGaAs quantum wires on vicinal GaAs(110) surfaces misoriented 3

Mat. Sci. Engin. B 35, 295-298 (1995)
[ | | IF: 2.331 ]

65
N.N. Ledentsov, M.V. Maximov, P.S. Kop'ev, V.M. Ustinov, M.V. Belousov, B.Ya. Meltser, S.V. Ivanov, V.A. Shchukin, Zh.I. Alferov, M. Grundmann, D. Bimberg, S.S. Ruvimov, W. Richter, P. Werner, U. Gösele, J. Heydenreich, P.D. Wang, C.M.S. Torres
Optical Spectroscopy of Self-Organized Nanoscale Heterostructures Involving High-Index Surfaces

Microelectr. J. 26, 871-879 (1995)
[ | | IF: 0.912 ]

64
M. Grundmann, O. Stier, D. Bimberg
InAs/GaAs Quantum Pyramids: Strain Distribution, Optical Phonons and Electronic Structure

Phys. Rev. B 52(16), 11969-11981 (1995)
[ | | IF: 3.767 ]

63
S. Ruvimov, P. Werner, K. Scheerschmidt, J. Heydenreich, U. Richter, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, P.S. Kop’ev, Zh.I. Alferov
Structural Characterization of (In,Ga)As Quantum Dots in a GaAs Matrix

Phys. Rev. B 51(20), 14766-14769 (1995)
[ | | IF: 3.767 ]

62
M. Grundmann, J. Christen, N.N. Ledentsov, J. Böhrer, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov
Ultranarrow Luminescence Lines from Single Quantum Dots

Phys. Rev. Lett. 74(20), 4043-4046 (1995)
[ | | IF: 7.645 ]

61
M. Grundmann, N.N. Ledentsov, R. Heitz, L. Eckey, J. Böhrer, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, J. Heydenreich, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov
InAs/GaAs Quantum Dots: Radiative Recombination from Zero-dimensional States

Phys. Status Solidi B 188, 249-258 (1995)
[ | | IF: 1.522 ]

60
D. Bimberg, M. Grundmann, N.N. Ledentsov, S.S. Ruvimov, P. Werner, U. Richter, J. Heydenreich, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov
Self-organization processes in MBE grown quantum dot structures

Thin Solid Films 267, 32-36 (1995)
[ | | IF: 1.604 ]

59
D. Bimberg, N.N. Ledentsov, N. Kirstaedter, O. Schmidt, M. Grundmann, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov, S.S. Ruvimov, U. Gösele, J. Heydenreich
InAs-GaAs Quantum Dot Lasers: in Situ Growth, Radiative Lifetimes and Polarization Properties
Extended Abstracts of the 1995 Int. Conf. on Solid State Devices and Materials (ssdm 95, Osaka), p. 716-718 (1995)
[ | ]

58
H. Nakashima, M. Takeuchi, K. Kimura, M. Iwane, H.K. Huang, K. Inoue, J. Christen, M. Grundmann, D. Bimberg
Formation and characterization of AlGaAs quantum wires on vicinal (110) surfaces
Extended Abstracts of the 1995 Int. Conf. on Solid State Devices and Materials (ssdm'95, Osaka), p. 785-787 (1995)
[ | ]

57
S. Ruvimov, P. Werner, K. Scheerschmidt, U. Richter, U. Gösele, J. Heydenreich, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, P.S. Kop'ev, Zh.I. Alferov
TEM/HREM Characterization of Self-organized (In,Ga)As Quantum Dots
Inst. Phys. Conf. Ser. 146, 31 (1995)

56
V.A. Shchukin, A.I. Borovkov, N.N. Ledentsov, P.S. Kop’ev, M. Grundmann, D. Bimberg
Stress-induced formation of ordered nanostructures on crystal surfaces
Phys. Low-Dim. Struct. 12, 43 (1995)

55
F. Heinrichsdorff, A. Krost, M. Grundmann, J. Böhrer, R. Heitz, D. Bimberg, A. Darhuber, G. Bauer, M. Wassermeier, S.S. Ruvimov
MOCVD grown InGaAs/GaAs quantum dots
Proc. VI European Workshop of MOVPE and Related Techniques (Gent, 1995):1-3
[ ]

54
N. Kirstaedter, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, S.S. Ruvimov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov, U. Richter, P. Werner, U. Gösele, J. Heydenreich
Low Threshold, large T0 Injection Laser Emission from (InGa)As Quantum Dots

Electr. Lett. 30, 1416-1417 (1994)
[ | | IF: 1.038 ]

53
E. Dröge, R.F. Schnabel, E.H. Böttcher, M. Grundmann, A. Krost, D. Bimberg
High-speed InGaAs on Si Metal-semiconductor-metal Photodetectors

Electr. Lett. 30, 1348-1350 (1994)
[ | | IF: 1.038 ]

52
M. Grundmann, J. Christen, F. Heinrichsdorff, A. Krost, D. Bimberg
Strain Distribution in InP Grown on Patterned Si: Direct Visualization by Cathodoluminescence Wavelength Imaging

J. Electr. Mat. 23, 201-206 (1994)
[ | | IF: 1.635 ]

51
M. Grundmann, E. Kapon, J. Christen, D. Bimberg
Electronic and Optical Properties of Quasi One-dimensional Carriers in Quantum Wires

J. Nonlin. Opt. Phys. Mat. 4, 99-140 (1994)
[ | | IF: 0.481 ]

50
M. Grundmann, O. Stier, D. Bimberg
Symmetry Breaking in Pseudomorphic V-groove Quantum Wires

Phys. Rev. B 50(19), 14187-14192 (1994)
[ | | IF: 3.767 ]

49
M. Grundmann, O. Stier, J. Christen, D. Bimberg
Pseudomorphic Quantum Wires: Symmetry Breaking due to Structural, Strain and Piezoelectric Field Induced Confinement

Superlatt. Microstr. 16(4), 249-251 (1994)
[ | | IF: 1.564 ]

48
M. Grundmann, J.Christen.V. Tuerck, E. Kapon, R. Bhat, C. Caneau, D.M. Hwang, D. Bimberg
Radiative Recombination in Pseudomorphic InGaAs/GaAs Quantum Wires Grown on Nonplanar Substrates

Sol. St. Electr. 37, 1097-1100 (1994)
[ | | IF: 1.482 ]

47
M. Grundmann, J. Christen, M. Joschko, D. Bimberg, E. Kapon
Recombination kinetics and intersubband relaxation in semiconductor quantum wires

Semic. Sci. Technol. 9(11S), 1939-1945 (1994)
[ | | IF: 2.098 ]

46
J. Christen, E. Kapon, M. Grundmann, M. Walther, D. Bimberg
InGaAs Strained Quantum Wire Structures: Optical Properties and Laser Applications
Extended Abstracts of the 1994 Int. Conf. on Solid State Devices and Materials (ssdm 94, Yokohama), p. 66-68 (1994)
[ | ]

45
M. Grundmann, A. Krost, D. Bimberg, H. Cerva
The Formation of Interfaces and Crystal Defects: A case study of InGaAs Quantum Wells on InP/Si(001)
Proc. 4th Int. Conf. Formation of Semiconductor Interfaces (ICFSI-4), p. 530-533 (1994), H. L, ed. (World Scientific, Singapore, 1994)
[ ]

44
R.F. Schnabel, M. Grundmann, A. Krost, J. Christen, F. Heinrichsdorff, D. Bimberg, H. Cerva
Defect Reduction and Strain Relaxation Mechanisms in InP grown on Patterned Si(001)
Proc. 6th Int. Conf. on InP and Rel. Compounds (IPRM-6), IEEE Catalog #94CH3369-6, Library of Congress #93-61270, p. 640-643 (1994)
[ | ]

43
M. Grundmann, V. Tuerck, J. Christen, R.F. Schnabel, D. Bimberg, E. Kapon, D.M. Hwang, C. Caneau, R. Bhat
Strained InGaAs/GaAs Quantum Wires: Modelling and Optical Properties
Proc. 6th Int. Conf. on InP and Rel. Compounds (IPRM-6), IEEE Catalog #94CH3369-6, Library of Congress #93-61270, p. 451-454 (1994)
[ | ]

42
R.F. Schnabel, A. Krost, M. Grundmann, F. Heinrichsdorff, D. Bimberg, M. Pilatzek, P. Harde
Epitaxy of High Resistivity InP on Si

Appl. Phys. Lett. 63, 3607-3609 (1993)
[ | | IF: 3.794 ]

41
H.M. Cox, D.M. Hwang, M.R. Frei, C. Caneau, M. Grundmann, D. Bimberg
Simultaneous Planarized Selective-Area Epitaxy of GaxIn1-xAs in Normal and Dove-tail Etched Grooves

Proc. Mat. Res. Soc. 326, 561-566 (1993)
[ | ]

40
E. Kapon, M. Walther, D.M. Hwang, E. Colas, C. Caneau, R. Bhat, J. Christen, M. Grundmann, D. Bimberg
Carrier Capture and Stimulated Emission in Quantum Well Lasers Grown on non-planar Substrates
 
NATO ASI Series E: Applied Sciences 236, 317-330 (1993), J.-P. Leburton, J. Pascual, C. Sotomayor-Torres, eds. (Kluwer, Dordrecht, 1993), ISBN 0792322770
[ | ]

39
R.F. Schnabel, F. Heinrichsdorff, A. Krost, M. Grundmann, T. Wolf, K. Schatke, D. Bimberg, M. Pilatzek, P. Harde
Semi-insulating InP:Fe on Si
Proc. 5th Int. Conf. on Indium Phosphide and Related Compounds (IPRM-5), IEEE Catalog #93CH3276-3, Library of Congress #93-77243, p. 115-118 (1993)
[ | ]

38
J. Christen, M. Grundmann, E. Kapon, E. Colas, D.M. Hwang, D. Bimberg
Ultrafast carrier capture and long recombination lifetime of quasi one dimensional carriers in GaAs quantum wires

Appl. Phys. Lett. 61, 67-69 (1992)
[ | | IF: 3.794 ]

37
M. Grundmann, A. Krost, D. Bimberg, O. Ehrmann
Maskless Growth of InP stripes on patterned Si (001): Defect Reduction and Improvement of Optical Properties

Appl. Phys. Lett. 60, 3292-3294 (1992)
[ | | IF: 3.794 ]

36
J. Christen, V. Petrova-Koch, V. Lehmann, T. Muschik, A. Kux, M. Grundmann, D. Bimberg
Cathodoluminescence in microporous Si

Proc. 21st Int. Conf. on the Physics of Semiconductors (ICPS-21), (Beijing, China, 1992), p. 1487 (1992) (World Scientific, Singapore), P. Jiang, H.-Z. Zheng, eds.

35
K. Streubel, V. Härle, F. Scholz, M. Bode, M. Grundmann
Interfacial Properties of very thin GaInAs/InP Quantum Wells Structures grown by Metalorganic Vapor Phase Epitaxy

J. Appl. Phys. 71(7), 3300-3306 (1992)
[ | | IF: 2.21 ]

34
A. Krost, M. Grundmann, D. Bimberg, H. Cerva
InP on patterned Si(001): Defect Reduction by Application of the Necking Mechanism

J. Cryst. Growth 124, 207-212 (1992)
[ | | IF: 1.552 ]

33
M. Grundmann, A. Krost, D. Bimberg, H. Cerva
InGaAs/InP Quantum Wells on vicinal Si(001): Structural and Optical Properties

J. Vac. Sci. Technol. B 10, 1840-1843 (1992)
[ | | IF: 1.267 ]

32
E.H. Böttcher, N. Kirstaedter, M. Grundmann, D. Bimberg, R. Zimmermann, C. Harder, H.P. Meier
Nonspectroscopic Approach to the Determination of the Chemical Potential and Bandgap Renormalization

Phys. Rev. B 45(15), 8535-8541 (1992)
[ | | IF: 3.767 ]

31
J. Christen, E. Kapon, M. Grundmann, D.M. Hwang, M. Joschko, D. Bimberg
1D Charge Carrier Dynamics in GaAs Quantum Wires

Phys. Status Solidi B 173, 307-321 (1992)
[ | | IF: 1.522 ]

30
E. Kapon, M. Walther, J. Christen, M. Grundmann, C. Caneau, D.M. Hwang, E. Colas, R. Bhat, G.H. Song, D. Bimberg
Quantum Wire Heterostructures for Optoelectronic Applications

Superlatt. Microstr. 12(4), 491-499 (1992)
[ | | IF: 1.564 ]

29
M. Grundmann, A. Krost, D. Bimberg
Crystallographic and Optical Properties of InP/Si (001) Grown by Low Temperature MOCVD Process

Surf. Sci. 267, 47-49 (1992)
[ | | IF: 1.838 ]

28
J. Christen, E. Kapon, E. Colas, D.M. Hwang, L.M. Schiavone, M. Grundmann, D. Bimberg
Cathodoluminescence Investigation of Lateral Carrier Confinement in GaAs/AlGaAs Quantum Wires Grown by OMCVD on Non-planar Substrates

Surf. Sci. 267, 257-262 (1992)
[ | | IF: 1.838 ]

27
E. Kapon, M. Walther, J. Christen, M. Grundmann, D.M. Hwang, E. Colas, D. Bimberg
Optical Properties of Semiconductor Quantum Wires Grown on Nonplanar Substrates

Springer Series in Solid State Sciences 111, 300-310 (1992), G. Bauer, F. Kuchar, H. Heinrich, eds. (Springer, Berlin, 1992), ISBN 978-3-642-84857-5
[ | link | ]

26
M. Grundmann, A. Krost, D. Bimberg, O. Ehrmann
Local Epitaxy of Inp on V-Grooved Si
6th Int. Conf. Metalorganic Vapor Phase Epitaxy, p. 17-18 (1992)
[ | ]

25
D. Bimberg, M. Grundmann, J. Christen
Characterization of Strained Heterostructures by Cathodoluminescence

AIP Conf. Proc. 227, 68-71 (1991) (AIP Publishing LLC, New York)
[ | ]

24
M. Grundmann, A. Krost, D. Bimberg
Low Temperature Metal Organic Chemical Vapor Deposition of InP on Si (001)

Appl. Phys. Lett. 58, 284-286 (1991)
[ | | IF: 3.794 ]

23
M. Grundmann, J. Christen, D. Bimberg, A. Hashimoto, T. Fukunaga, N. Watanabe
Direct Imaging of Si Incorporation in GaAs Masklessly Grown on Patterned Si Substrates

Appl. Phys. Lett. 58, 2090-2092 (1991)
[ | | IF: 3.794 ]

22
M. Grundmann, A. Krost, D. Bimberg
Antiphase Domain Free InP on Si (001): Optimization of MOCVD Process

J. Cryst. Growth 115, 150-153 (1991)
[ | | IF: 1.552 ]

21
J. Böhrer, M. Grundmann, U. Lienert, D. Bimberg, M. Kamada, N. Watanabe
Determination of the band discontinuity of MOCVD grown InGaAs/InAlAs Heterostructures with Optical and Structural Methods

J. Cryst. Growth 107, 555-560 (1991)
[ | | IF: 1.552 ]

20
M. Grundmann, A. Krost, D. Bimberg
LP-MOVPE Growth of Antiphase Domain Free InP on (001) Si using Low Temperature Processing

J. Cryst. Growth 107, 494-495 (1991)
[ | | IF: 1.552 ]

19
J. Christen, M. Grundmann, D. Bimberg
Scanning Cathodoluminescence Microscopy: A Unique Approach to Atomic Scale Characterization of HeteroInterfaces and Imaging of Semiconductor Inhomogeneities

J. Vac. Sci. Technol. B 9, 2358-2368 (1991)
[ | | IF: 1.267 ]

18
M. Grundmann, A. Krost, D. Bimberg
Observation of the First Order Phase Transition from Single to Double Stepped Si (001) in Metalorganic Chemical Vapor Deposition of InP on Si

J. Vac. Sci. Technol. B 9, 2158-2166 (1991)
[ | | IF: 1.267 ]

17
M. Grundmann, J. Christen, D. Bimberg
Cathodoluminescence of Strained Quantum Wells and Layers

Superlatt. Microstr. 9(1), 65-75 (1991)
[ | | IF: 1.564 ]

16
M. Grundmann
Heteroepitaxie von InP auf Si (001)
Dissertation (Technische Universität Berlin, 1991)
[ | link ]

15
K. Streubel, F. Scholz, V. Härle, M. Bode, M. Grundmann, J. Christen, D. Bimberg
Determination of the interface structure of very thin GaInAs/InP quantum wells
Proc. 3rd Int. Conf. Indium Phosphide and Related Materials, p. 468-471 (1991)
[ | ]

14
M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Erratum: Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells [Appl. Phys. Lett. 55, 1765 (1989)]

Appl. Phys. Lett. 57(19), 2034 (1 page) (1990)
[ | | IF: 3.794 ]

13
M. Grundmann, U. Lienert, D. Bimberg, B. Sievers, F.R. Keßler, A. FischerColbrie, J.N. Miller
Orthorhombic Crystal Symmetry in Partially Relaxed In0.23Ga0.77As/GaAs Quantum Wells: Impact on Valence Band Structure and Optical Anisotropy

Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) (Thessaloniki, Greece, 1990) 2, 945 (1990) (World Scientific, Singapore), E.M. Anastassakis, J.D. Koannopoulos, eds.
[ ]

12
E.H. Böttcher, N. Kirstaedter, M. Grundmann, D. Bimberg, C. Harder, M. Meier
Band-Gap Renormalization in undoped GaAs/AlGaAs Quantum Wells Determined by a Non-Spectroscopic Method

Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) (Thessaloniki, Greece, 1990) 1, 371 (1990) (World Scientific, Singapore), E.M. Anastassakis, J.D. Koannopoulos, eds.
[ ]

11
J. Christen, M. Grundmann, D. Bimberg, A. Hashimoto, T. Fukunaga, N. Watanabe
Direct Imaging of Lateral Bandgap Variation in GaAs on V grooved Si

Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) (Thessaloniki, Greece, 1990) 1, 272 (1990) (World Scientific, Singapore), E.M. Anastassakis, J.D. Koannopoulos, eds.
[ ]

10
M. Grundmann, U. Lienert, J. Christen, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Dependence of Structural and Optical Properties of In0.23Ga0.77As/GaAs Quantum Wells on Misfit Dislocations: Different Critical Thickness for Dislocation Generation and Degradation of Optical Properties

J. Vac. Sci. Technol. B 8, 751-757 (1990)
[ | | IF: 1.267 ]

9
D.B.T. Thoai, R. Zimmermann, M. Grundmann, D. Bimberg
Image Charges in Semiconductor Quantum Wells: Effect on Exciton Binding Energy

Phys. Rev. B 42(9), 5906-5909 (1990)
[ | | IF: 3.767 ]

8
M. Grundmann, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Recombination Dynamics in Pseudomorphic and Partially Relaxed In0.23Ga0.77As/GaAs Quantum Wells

Phys. Rev. B 41(14), 10120-10123 (1990)
[ | | IF: 3.767 ]

7
M. Grundmann, U. Lienert, J. Christen, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Pseudomorphic In0.23Ga0.77As/GaAs Quantum Wells: Correlation of Anisotropic Lattice Relaxation and Degradation of Optical Properties

Springer Series in Solid State Sciences 97, 304-312 (1990), F. Kuchar, H. Heinrich, G. Bauer, eds. (Springer, Berlin, 1990), ISBN 978-3-642-84274-0
[ | link ]

6
M. Grundmann, J. Christen, D. Bimberg
Cathodoluminescence Imaging of Defects at Semiconductor Surfaces and Interfaces
Defect Control in Semiconductors 2, 1203-1211 (1990), K. Sumino, ed. (North-Holland, Amsterdam, 1990)
[ | ]

5
M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Anisotropic and Inhomogeneous Strain Relaxation in Pseudomorphic In0.23Ga0.77As/GaAs Quantum Wells

Appl. Phys. Lett. 55, 1765-1767 (1989)
[ | | IF: 3.794 ]

4
J. Christen, M. Grundmann, D. Bimberg
Direct Imaging and Theoretical Modelling of the Atomistic Morphological and Chemical Structure of Semiconductor Heterointerfaces

Appl. Surf. Sci. 41/42, 329-336 (1989)
[ | | IF: 2.112 ]

3
M. Grundmann, J. Christen, D. Bimberg, A. Fischer-Colbrie, R. Hull
Misfit Dislocations in Pseudomorphic In0.23Ga0.77As/GaAs Quantum Wells: Influence on Lifetime and Diffusion of Excess Excitons

J. Appl. Phys. 66(5), 2214-2216 (1989)
[ | | IF: 2.21 ]

2
M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Dislocation Induced Anisotropies of the Structural and Optical Properties of Pseudomorphic InGaAs/GaAs Quantum Wells
Inst. Phys. Conf. Ser. 106, 453-458 (1989), T. Ikoma, H. Watanabe, eds.
[ ]

1
M. Grundmann, D. Bimberg
Anisotropy Effects on Excitonic Properties in Realistic Quantum Wells

Phys. Rev. B 38(18), 13486-13489 (1988)
[ | | IF: 3.767 ]