Nano-Optoelectronics
M. Grundmann
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From the contents: Preface Contents Contributing authors Part I - Concepts 1. The History of Heterostructure Lasers Zhores I. ALferov 2. Stress-Engineered Quantum Dots: Nature's Way Anupam Madhukar Part II - Physics 3. Characterization of Structure and Composition of Quantum Dots by Transmission Electron Microscopy Kurt Scheerschmidt, Peter Werner 4. Scanning Tunneling Microscopy Characterization of InAs Nanostructures Formed on GaAs (001) Shigehiko Hasegawa, Hisao Nakashima 5. Cross-sectional Scanning Tunneling Microscopy at InAs Quantum Dots Mario Dähne, Holger Eisele 6. X-ray Characterization of Group III-Nitrides (Al,In,Ga)N Alois Krost 7. Theory of the Electronic and Optical Properties of InGaAs/GaAs Quantum Dots Oliver Stier 8. Magneto-Tunneling Spectroscopy of Self-Assembled InAs Dots Laurence Eaves, Amalia Patané, Peter C. Main 9. Modulation Spectroscopy and Surface Voltage Spectroscopy of Semiconductor Quantum Wires and Quantum Dots Fred H. Pollak 10. Optical Properties of Self-Organized Quantum Dots Robert Heitz 11. High Occupancy Effects and Condensation Phenomena in Semiconductor Microcavities and Bulk Semiconductors Maurice S. Skolnick, Alexander I. Tartakovskii, Raphael Butté, R. Mark Stevenson, Jeremy J. Baumberg, David M. Whittaker Part III - Devices 12. Theory of Quantum Dot Lasers Marius Grundmann 13. Long-Wavelength InGaAs/GaAs Quantum Dot Lasers Nikolai N. Ledentsov 14. InP/GaInP Quantum Dot Lasers Oliver G. Schmidt, Yvonne M. Manz, Karl Eberl 15. High Power Quantum Dot Lasers Christian Ribbat, Roman Sellin 16. Inter-Sublevel Transitions in Quantum Dots and Device Applications Alexander Weber 17. Progress in Growth and Physics of Nitride-Based Quantum Dots Yasuhiko Arakawa 18. Ultrafast Optical Properties of Quantum Dot Amplifiers Paola Borri
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