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Currently selected: year: 2013 | journals: all | types: all | funding: all | all authors
all info no icons RTF Initials No issue Funding Style1 Style2 34 Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann Energy-selective multichannel ultraviolet photodiodes based on (Mg,Zn)O
Appl. Phys. Lett. 103(17), 171111:1-4 (2013) [ | | IF: 3.794 ] 33 F. Schmidt, S. Müller, H. von Wenckstern, C.P. Dietrich, R. Heinhold, M.W. Allen, M. Grundmann Comparative Study of Deep Defects in ZnO Microwires, Thin Films and Bulk Single Crystals
Appl. Phys. Lett. 103(6), 062102:1-4 (2013) [ | | IF: 3.794 ] 32 K. Brachwitz, T. Böntgen, M. Lorenz, M. Grundmann On the transition point of thermally activated conduction of spinel-type MFe2O4 ferrite thin films (M=Zn,Co,Ni)
Appl. Phys. Lett. 102(17), 172104:1-4 (2013) [ | | IF: 3.794 ] 31 Friedrich-Leonhard Schein, Holger von Wenckstern, Marius Grundmann Transparent p-CuI/n-ZnO heterojunction diodes
Appl. Phys. Lett. 102(9), 092109:1-4 (2013) [ | | IF: 3.794 ] 30 Marcus Jenderka, José Barzola-Quiquia, Zhipeng Zhang, Heiko Frenzel, Marius Grundmann, Michael Lorenz Mott Variable Range Hopping and Weak Antilocalization Effect in Heteroepitaxial Na2IrO3 Thin Films
arxiv: 1303.5245 (2013) [ | link ] 29 Holger von Wenckstern, Zhipeng Zhang, Florian Schmidt, Jörg Lenzner, Holger Hochmuth, Marius Grundmann Continuous composition spread using pulsed-laser deposition with a single, segmented target
CrystEngComm 15(46), 10020-10027 (2013) [ | | IF: 3.879 ] 28 Fabian Johannes Klüpfel, Friedrich-Leonhard Schein, Michael Lorenz, Heiko Frenzel, Holger von Wenckstern, Marius Grundmann Comparison of ZnO-based JFET, MESFET, and MISFET
IEEE Transact. Electr. Dev. 60(6), 1828-1833 (2013) [ | | IF: 2.062 ] 27 R. Schmidt-Grund, T. Lühmann, T. Böntgen, H. Franke, D. Opper, M. Lorenz, M. Grundmann Temperature dependent dielectric function in the NIR-VUV spectral range of alumina and yttria stabilized zirconia thin films
J. Appl. Phys. 114(22), 223509:1-8 (2013) [ | | IF: 2.21 ] 26 T. Böntgen, K. Brachwitz, R. Schmidt-Grund, M. Lorenz, M. Grundmann Vacuum ultraviolett dielectric function of ZnFe2O4 thin films
J. Appl. Phys. 113(7), 073503:1-4 (2013) [ | | IF: 2.21 ] 25 Alexander Lajn, Holger von Wenckstern, Marius Grundmann, Gerald Wagner, Pedro Barquinha, Elvira Fortunato, Rodrigo Martins Comparative study of transparent rectifying contacts on semiconducting oxide single crystals and amorphous thin films
J. Appl. Phys. 113(4), 044511:1-13 (2013) [ | | IF: 2.21 ] 24 J. Zippel, M. Lorenz, M. Lange, M. Stölzel, G. Benndorf, M. Grundmann Growth control of nonpolar and polar ZnO/MgxZn1-xO quantum wells by pulsed-laser deposition
J. Cryst. Growth 364, 81-87 (2013) [ | | IF: 1.552 ] 23 M. Lange, C.P. Dietrich, M Lorenz, M. Grundmann Excitonic and Optical Confinement in Microwire Heterostructures with Non-Polar (Zn,Cd)O/(Mg,Zn)O Multiple Quantum Wells
J. Phys. Chem. C 117(17), 9020-9024 (2013) [ | | IF: 4.814 ] 22 J. Zippel, M. Lorenz, A. Setzer, M. Rothermel, D. Spemann, P. Esquinazi, M. Grundmann, G. Wagner, R. Denecke, A.A. Timopheev Defect-induced magnetism in homoepitaxial manganese stabilized zirconia thin films
J. Phys. D: Appl. Phys. 46(27), 275002:1-10 (2013) [ | | IF: 2.772 ] 21 V.V. Lazenka, M. Lorenz, H. Modarresi, K. Brachwitz, P. Schwinkendorf, T. Böntgen, J. Vanacken, M. Ziese, M. Grundmann, V.V. Moshchalkov Effect of rare-earth ion doping on multiferroic properties of BiFeO3 thin films grown epitaxially on SrTiO3(100)
J. Phys. D: Appl. Phys. 46(17), 175006:1-9 (2013) [ | | IF: 2.772 ] 20 Michael Lorenz, Christian Schmidt, Gabriele Benndorf, Tammo Böntgen, Holger Hochmuth, Rolf Böttcher, Andreas Pöppl, Daniel Spemann, Marius Grundmann Degenerate interface layers in epitaxial scandium-doped ZnO thin films
J. Phys. D: Appl. Phys. 46(6), 065311:1-10 (2013) [ | | IF: 2.772 ] 19 Felix Daume, Stefan Puttnins, Christian Scheit, Hendrik Zachmann, Andreas Rahm, Alexander Braun, Marius Grundmann Damp heat treatment of Cu(In,Ga)Se2 solar cells with different sodium content
Materials 6(12), 5478-5489 (2013) [ | | IF: 2.247 ] 18 Michael Lorenz, Marius Grundmann, Sandra Wickert, Reinhard Denecke Oxidation state of tungsten oxide thin films used as gate dielectric for zinc oxide based transistors
Proc. Mat. Res. Soc. 1494, 1649:1-4 (2013) [ | ] 17 C. Kranert, R. Schmidt-Grund, M. Grundmann Surface- and point-defect-related Raman scattering in wurtzite semiconductors excited above the band gap
New J. Phys. 15(11), 113048:1-22 (2013) [ | | IF: 4.063 ] 16 J. Zippel, M. Lorenz, G. Wagner, J. Lenzner, M. Grundmann Martensitic phase transition and subsequent surface corrugation in manganese stabilized zirconia thin films
Phil. Mag. 93(18), 2329-2339 (2013) [ | | IF: 1.596 ] 15 Marko Stölzel, Alexander Müller, Gabriele Benndorf, Matthias Brandt, Michael Lorenz, Marius Grundmann Determination of unscreened exciton states in polar ZnO/(Mg,Zn)O quantum wells with strong quantum-confined Stark effect
Phys. Rev. B 88(4), 045315:1-6 (2013) [ | | IF: 3.767 ] 14 Marcus Jenderka, José Barzola-Quiquia, Zhipeng Zhang, Heiko Frenzel, Marius Grundmann, Michael Lorenz Mott variable range hopping and weak antilocalization effect in heteroepitaxial Na2IrO3 thin films
Phys. Rev. B 88(4), 045111:1-6 (2013) [ | link | | IF: 3.767 ] 13 Alexander Müller, Marius Grundmann Tunneling dynamics of excitons in random semiconductor alloys
Phys. Rev. B 87(3), 035134:1-5 (2013) [ | | IF: 3.767 ] 12 Marius Grundmann, Friedrich-Leonhard Schein, Michael Lorenz, Tammo Böntgen, Jörg Lenzner, Holger von Wenckstern Cuprous Iodide - a p-type transparent semiconductor: history and novel applications Phys. Status Solidi A 210(9), 1671-1703 (2013) [ | | extra | IF: 1.648 ] 11 Heiko Frenzel, Alexander Lajn, Marius Grundmann One decade of fully transparent oxide thin film transistors: fabrication, performance and stability Phys. Status Solidi RRL 7(9), 605-615 (2013) [ | | extra | IF: 2.58 ] 10 Stefan Puttnins, Sergiu Levcenco, Klaus Schwarzburg, Gabriele Benndorf, Felix Daume, Andreas Rahm, Alexander Braun, Marius Grundmann, Thomas Unold Effect of Sodium on Material and Device Quality in Low Temperature Deposited Cu(In,Ga)Se2
Sol. Energy Mat. Sol. Cells 119, 281-286 (2013) [ | | IF: 4.63 ] 9 A.A. Timopheev, A.M. Azevedo, N.A. Sobolev, K. Brachwitz, M. Lorenz, M. Ziese, P. Esquinazi, M. Grundmann Magnetic anisotropy of epitaxial zinc ferrite thin films grown by pulsed laser deposition
Thin Solid Films 527, 273-277 (2013) [ | | IF: 1.604 ] 8 Marius Grundmann Transparent semiconductors - from materials growth to devices BuildMoNa Annual Report 2013, p. 29-33 (2013) [ | link ] 7 Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE CA 2765981 C (Canadian Intellectual Property Office, 2013) [ | link ] 6 Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu ihrer Herstellung und Verwendung EP 2 446 484 B1 (European Patent Office, Munich, 2013) [ | link ] 5 M. Lorenz, M. Ziese, G. Wagner, P. Esquinazi, M. Grundmann Exchange bias and magnetoelectric coupling effects in ZnFe2O4-BaTiO3 composite thin films Ext. Abstracts of the Nature Conference "Frontiers in Electronic Materials", Aachen, Germany (Nanosession: Multiferroic Thin Films and Heterostructures), J. Heber, D. Schlomm, Y. Tokura, R. Waser, M. Wuttig, eds., p. 334 (1 page) (2013) [ | | extra ] 4 S. Puttnins, H. Kempa, S. Englisch, R. Karsthof, F. Daume, A. Rahm, A. Braun, M. Grundmann Voltage Dependent Photocurrent in Low-Temperature Deposited CIGSe Solar Cells Proc. 28th European Photovoltaic Solar Energy Conference and Exhibition, p. 2438-2442 (2013) [ | ] 3 F. Daume, A. Rahm, A. Braun, M. Grundmann Sodium in the Degradation Process of Cu(In,Ga)Se2 Solar Cells Proc. 28th European Photovoltaic Solar Energy Conference and Exhibition, p. 2192-2198 (2013) [ | ] 2 Report of The Physics Institutes of Universität Leipzig 2012 Universität Leipzig, M. Grundmann, ed. [ | link ] 1 Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE US 8,445,904 B2 (United States Patent, 2013) [ | link ] |