Holger von Wenckstern

PUBLICATIONS

Patents

Heiko Frenzel, Alexander Lajn, Holger von Wenckstern and Marius Grundmann
Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu seiner Herstellung und Verwendung
Deutsche Patentanmeldung Nr. 10 2009 030 045.7-33

Holger von Wenckstern, Max Kneiß, Daniel Splith and Marius Grundmann
MASK-ASSISTED RADIALLY SEGMENTED TARGET PHYSICAL VAPOR DEPOSITION
Europäische Patentanmeldung Nr. EP21208007.1

Review Articles and Book Chapters

12
M. Lorenz, H. Hochmuth, H. von Wenckstern, M. Grundmann
Flexible hardware concept of pulsed laser deposition for large areas and combinatorial composition spreads
Rev. Sci. Instrum. 94, 083905 (2023)

11
Holger von Wenckstern, Daniel Splith, Marius Grundmann
Heteroepitaxial Growth of Ga₂O₃ and Related Alloys
In: Higashiwaki M., Fujita S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293 (Springer, Cham, 2020), Online ISBN 978-3-030-37153-1

10
Daniel Splith, Peter Schlupp, Holger von Wenckstern, Marius Grundmann
All-Oxide pn-Heterojunction Diodes with β-Ga₂O₃
In: Higashiwaki M., Fujita S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293 (Springer, Cham, 2020), Online ISBN 978-3-030-37153-1

9
Holger von Wenckstern, Max Kneiß, Anna Hassa, Philipp Storm, Daniel Splith and Marius Grundmann
A review of the segmented-target approach to combinatorial material synthesis by pulsed-laser deposition
phys. stat. sol. (b) 1900626 (2019)

8
Holger von Wenckstern
Properties of (In,Ga)₂O₃ alloys
in: Gallium Oxide Technology, Devices and Applications, eds. Stephen Pearton Fan Ren Michael Mastro, Elsevier (2019), ISBN: 9780128145210

7
Holger von Wenckstern
Group-III Sesquioxides: Growth, Physical Properties and Devices
Adv. Electron. Mater. 3, 1600350 (2017)

6
Marius Grundmann, Fabian Klüpfel, Robert Karsthof, Peter Schlupp, Friedrich-Leonhard Schein, Daniel Splith, Chang Yang, Sofie Bitter, Holger von Wenckstern
Oxide Bipolar Electronics: Materials, Devices and Circuits
J. Phys. D: Appl. Phys. 49, 213001 (2016)

5
Marius Grundmann, Friedrich-Leonhard Schein, Michael Lorenz, Tammo Böntgen, Jörg Lenzner, Holger von Wenckstern
Cuprous Iodide: A p-type Transparent Semiconductor, History and Novel Applications
phys. stat. sol. (a) 210, 1671 (2013)

4
H. von Wenckstern, R. Schmidt-Grund, C. Bundesmann, A. Müller, C.P. Dietrich, M. Stölzel, M. Lange, M. Grundmann
The (Mg,Zn)O Alloy
Handbook of Zinc Oxide and Related Materials, Vol. 1 Materials, p. 257-320 (2012), Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855744

3
Heiko Frenzel, Michael Lorenz, Friedrich-L. Schein, Alexander Lajn, Fabian J. Klüpfel, Tobias Diez, Holger von Wenckstern, Marius Grundmann
Metal-semiconductor field-effect transistors and integrated circuits based on ZnO and related oxides
Handbook of Zinc Oxide and Related Materials, Vol. 2 Devices and Nano-Engineering, p. 369-434 (2012), Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855744

2
H. Frenzel, A. Lajn, H. von Wenckstern, M. Lorenz, F. Schein, Zh. Zhang, M. Grundmann
Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and their Application in Transparent Integrated Circuits
Adv. Materials 22, 5332 (2010)

1
H. von Wenckstern, H. Schmidt, M. Brandt, A. Lajn, R. Pickenhain, M. Lorenz, M. Grundmann, D.M. Hofmann, A. Polity, B.K. Meyer, H. Saal, M. Binnewies, A. Börger, K.-D. Becker, V.A. Tikhomirov, K. Jug
Anionic and cationic substitution in ZnO
Prog. Sol. Stat. Chem. 37, 153-172 (2009).

Peer-reviewed Articles

243
M. Lorenz, P. Storm, S. Gierth, S. Selle, H. von Wenckstern, M. Grundmann
Cation segregation observed in an (In,Ga)sub>2O₃ material thin film library beyond the miscibility limit of the bixbyite structure
Chemie Ingenieur Technik 95, 1786-1793 (2023)

242
S. Montag, J. Garcia Fernandez, D. Splith, M. Kneiß, Ø. Prytz, M. Grundmann, H. von Wenckstern
Cation segregation observed in an (In,Ga)sub>2O₃ material thin film library beyond the miscibility limit of the bixbyite structure
Phys. Rev. Mater. 7, 094603 (2023)

241
F. Schöppach, D. Splith, H. von Wenckstern, M. Grundmann
Oxygen Plasma Treatment to Enable Indium Oxide MESFET Devices
Adv. Electron. Mater. 2300291 (2023)

240
A. Langørgen, Y. K. Frodason, R. Karsthof, H. von Wenckstern, I. J. Thue Jensen, L. Vines, M. Grundmann
Defect level in κ-Ga₂O₃ revealed by thermal admittance spectroscopy
J. Appl. Phys. 134, 015701 (2023)

239
S. Köpp, C. Petersen, D. Splith, M. Grundmann, H. von Wenckstern
Properties of Schottky barrier diodes on heteroeptixial α-Ga₂O₃ thin films
Journal of Vacuum Science and Technology A 41, 043411 (2023) Editor's Pick

238
T. Schultz, M. Kneiß, P. Storm, D. Splith, H. von Wenckstern, C. T. Koch, A. Hammud, M. Grundmann, N. Koch
Growth of κ-([Al,In]_xGa_1-x)₂O₃ Quantum Wells and Their Potential for Quantum-Well Infrared Photodetectors
ACS Applied Materials and Interfaces 15, 29535–29541 (2023)

237
C. Petersen, S. Vogt, M. Kneiß, H. von Wenckstern, M. Grundmann
PLD of α-Ga₂O₃ on m-plane Al₂O₃: Growth regime, growth process, and structural properties
APL Mater 11, 061122 (2023)

236
T. Stralka, M. Bar, F. Schöppach, S. Selle, C. Yang, H. von Wenckstern, M. Grundmann
Grain and grain boundary conduction channels in copper iodide thin films
Phys. Status Solidi A 220, 2200883 (2023)

235
L. Thyen, D. Splith, M. Kneiß, M. Grundmann, H. von Wenckstern
MARS-PLD: A Novel Method for Area-Selective Deposition using Pulsed-Laser Deposition
Journal of Vacuum Science and Technology A 41, 020801 (2023) Editor's Pick

234
S. Vogt, C. Petersen, M. Kneiß, D. Splith, T. Schultz, H. von Wenckstern, N. Koch, M. Grundmann
Realization of Conductive n-Type Doped α-Ga₂O₃ on m-Plane Sapphire Grown by a Two-Step Pulsed Laser Deposition Process
Phys. Status Solidi A 220, 2200721 (2023)

233
S. Luo, L. Trefflich, S. Selle, R. Hildebrandt, E. Krüger, S. Lange, J. Yu, C. Sturm, M. Lorenz, H. von Wenckstern, C. Hagendorf, T. Höche, M. Grundmann
Ultrawide Bandgap Willemite-Type Zn₂GeO₄ Epitaxial Thin Films
Appl. Phys. Lett. 122, 031601 (2023)

232
J. Borgersen, R. Karsthof, V. Rønning, L. Vines, H. von Wenckstern, M. Grundmann, A.Y. Kuznetsov, and K.M. Johansen
Origin of enhanced conductivity in low dose ion irradiated oxides
AIP Advances 13, 015211 (2023)

231
M. Seifert, E. Krüger, M. S. Bar, S. Merker, H. von Wenckstern, H. Krautscheid, M. Grundmann, C. Sturm, S. Botti
Dielectric function of CuBr_xI_1-x alloy thin films
Phys. Rev. Materials 6, 124601 (2022)

230
T. Jawinski, C. Sturm, R. Clausing, H. Kempa, M. Grundmann, R. Scheer, H. von Wenckstern
Highly crystalline In₂S₃ thin films epitaxially grown on sapphire substrates
AIP Advances 12, 125215 (2022) Featured Article

229
P. Storm, K. Karimova, M. S. Bar, S. Selle, H. von Wenckstern, M. Grundmann, M. Lorenz
Suppression of Rotational Domains of CuI Employing Sodium Halide Buffer Layers
ACS Appl. Mater. Interfaces 14, 12350 (2022)

228
X. Xia, N. S. Al-Mamun, C. Fares, A. Haque, F. Ren, A. Hassa, H. von Wenckstern, M. Grundmann, S.J. Pearton
Band alignment of Al₂O₃ on α-(Al_xGa_1-x)₂O₃
ECS J. Solid State Sci. Technol. 11, 025006 (2022)

227
A. Welk, A. Reinhardt, O. Herrfurth, D. Splith, H. von Wenckstern, M. Grundmann
Analysis of Electrical Transport Properties of Amorphous Oxide Semiconductors by an Extended Percolation-Based Random Band-Edge Model
Phys. Rev. Applied 17, 024007 (2022)

226
P. Storm, S. Selle, H. von Wenckstern, M. Grundmann, M. Lorenz
Epitaxial lift-off of single crystalline CuI thin films
Journal of Materials Chemistry C 10, 4124 (2022)

2021

225
O. Lahr, M. Steudel, H. von Wenckstern, M. Grundmann
Mechanical Stress Stability of Flexible Amorphous Zinc Tin Oxide Thin-Film Transistors
Frontiers in Electronics 2, 797308 (2021)

224
E. Krüger, M. S. Bar, S. Blaurock, L. Trefflich, R. Hildebrandt, A. Müller, O. Herrfurth, G. Benndorf, H. von Wenckstern, H. Krautscheid, M. Grundmann, C. Sturm
Dynamics of exciton–polariton emission in CuI
APL Materials 9, 121102 (2021)

223
M. Kneiß, D. Splith, H. von Wenckstern, M. Lorenz, T. Schultz, N. Koch, M. Grundmann
Strain states and relaxation for α-(Al_xGa_1-x)₂O₃ thin films on prismatic planes of α-Al₂O₃ in the full composition range: Fundamental difference of a- and m-epitaxial planes in the manifestation of shear strain and lattice tilt
Journal of Materials Research 36, 4816–4831 (2021)

222
X. Xia, C. Fares, F. Ren, A. Hassa, H. von Wenckstern, M. Grundmann, S.J. Pearton
Al Composition Dependence of Band Offsets for SiO₂ on α-(Al_xGa_1-x)₂O₃
ECS J. Solid State Sci. Technol. 10, 113007 (2021)

221
M. Kneiß, D. Splith, P. Schlupp, A. Hassa, H. von Wenckstern, M. Lorenz, M. Grundmann
Realization of highly rectifying Schottky barrier diodes and pn heterojunctions on κ-Ga₂O₃ by overcoming the conductivity anisotropy
J. Appl. Phys. 8, 084502 (2021)

220
J. Borgersen, K. M. Johansen, L. Vines, H. von Wenckstern, M. Grundmann, A. Y. Kuznetsov
Fermi level controlled point defect balance in ion irradiated indium oxide
J. Appl. Phys. 8, 085703 (2021)

219
P. Storm, M. S. Bar, S. Selle, H. von Wenckstern, M. Grundmann, and M. Lorenz
p-Type Doping and Alloying of CuI Thin Films with Selenium
Phys. Status Solidi RRL 2100214 (2021)

218
P. Storm, S. Gierth, S. Selle, M. S. Bar, H. von Wenckstern, M. Grundmann, and M. Lorenz
Evidence for oxygen being a dominant shallow acceptor in p-type CuI
APL Materials 9, 051101 (2021)

217
A. Reinhardt, H. von Wenckstern and M. Grundmann
All-Amorphous Junction Field-Effect Transistors Based on High-Mobility Zinc Oxynitride
Adv. Electron. Mater. 7, 2000883 (2021)

216
A. Hassa, H. von Wenckstern and M. Grundmann
Progression of group-III sesquioxides: epitaxy, solubility and desorption
J. Phys. D: Appl. Phys. 54, 223001 (2021)

215
A. Welk, A. Reinhardt, O. Herrfurth, T. Schultz, H. von Wenckstern, N. Koch, and M. Grundmann
Tuning material properties of amorphous zinc oxynitride thin films by magnesium addition
APL Materials 9, 021120 (2021)

214
Jack E. N. Swallow, Robert G. Palgrave, Philip A. E. Murgatroyd, Anna Regoutz, Michael Lorenz, Anna Hassa, Marius Grundmann, Holger von Wenckstern, Joel B. Varley, and Tim D. Veal
Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors
ACS Appl. Mater. Interfaces 13, 2807(2021)

213
Daniel Splith Stefan Müller Holger von Wenckstern Marius Grundmann
Numerical Modeling of Schottky Barrier Diode Characteristics
Phys. Status Solidi A 2100121 (2021)

2020

212
Melanie Budde, Daniel Splith, Piero Mazzolini, Abbes Tahraoui, Johannes Feldl, Manfred Ramsteiner, Holger von Wenckstern, Marius Grundmann, and Oliver Bierwagen
SnO/β-Ga₂O₃ vertical pn-heterojunction diodes
Applied Physics Letters 117, 252106 (2020)

211
T. Jawinski, M. Lorenz, R. Scheer, M. Grundmann and H. von Wenckstern
Properties of epitaxially grown In2S3:V thin films for intermediate band solar cell application

47th IEEE Photovoltaic Specialists Conference (PVSC), 2020, pp. 2663-2666, doi: 10.1109/PVSC45281.2020.9300369 (2020)
210
L. Krieg, F. Meierhofer, S. Gorny, S. Leis, D. Splith, Z. Zhang, H. von Wenckstern, M. Grundmann, X. Wang, J. Hartmann, C. Margenfeld, I. Manglano Clavero, A. Avramescu, T. Schimpke, D. Scholz, H.-J. Lugauer, M. Strassburg, J. Jungclaus, S. Bornemann, H. Spende, A. Waag, K. K. Gleason and T. Voss
Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures
Nat Commun 11, 5092 (2020)

209
A. Hassa, P. Storm, M. Kneiß, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann
Structural and Elastic Properties of α-(Al_xGa_1-x)₂O₃ Thin Films on (11.0) Al₂O₃ Substrates for the Entire Composition Range
Phys. Status Solidi B. doi:10.1002/pssb.202000394 (2020)

208
O. Lahr, H. von Wenckstern, M. Grundmann
Ultrahigh-Performance Integrated Inverters Based on Amorphous Zinc Tin Oxide Deposited at Room Temperature
APL Materials 8, 091115 (2020), Editor's Pick

207
P. Storm, M. Bar, G. Benndorf, S. Selle, C. Yang, H. von Wenckstern, M. Grundmann, M. Lorenz
High mobility, highly transparent, smooth, p-type CuI thin films grown by pulsed laser deposition
APL Materials 8, 091115 (2020), Featured article, AIP Scilight

206
M. Kneiß, P. Storm, A. Hassa, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann
Epitaxial Growth of κ-(Al_xGa_1-x)O₃ Layers and Superlattice Heterostructures up to x = 0.48 on Highly Conductive Al-doped ZnO Thin Film Templates by Pulsed Laser Deposition
Phys. Status Solidi B. doi:10.1002/pssb.202000359 (2020)

205
C. Wouters, C. Sutton, L. M. Ghiringhelli, T. Markurt, R. Schewski, A. Hassa, H. von Wenckstern, M. Grundmann, M. Scheffler, M. Albrecht
Investigating the ranges of (meta) stable phase formation in (In_xGa_1-x)₂O₃: Impact of the cation coordination
arXiv:2008.04573 (2020)

204
A. Hassa, C. Wouters, M. Kneiß, D. Splith, C. Sturm, H. von Wenckstern, M. Albrecht, M. Lorenz, M. Grundmann
Control of Phase Formation of (Al_xGa_1-x)₂O₃ Thin Films on c-plane Al₂O₃
J. Phys. D: Appl. Phys. 53, 485105 (2020)

203
Oliver Lahr, Michael Bar, Holger von Wenckstern, Marius Grundmann
All-oxide transparent thin-film transistors based on amorphous zinc-tin-oxide fabricated at room temperature: Approaching the thermodynamic limit for sub-threshold swing
Adv. Electron. Mater. 6, 2000423 (2020)

202
J. Borgersen, L. Vines, Y. Frodason, A. Kuznetsov, H. von Wenckstern, M. Grundmann, M. Allen, J. Zúñiga-Pérez, K. Johansen
Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials
J. Phys.: Condens. Matter 32 505701(2020)

201
R. Karsthof, H. von Wenckstern, V.S. Olsen, M. Grundmann
Identification of Li_Ni and V_Ni acceptor levels in doped nickel oxide
APL Materials 8, 121106 (2020)

200
P. Schlupp, S. Vogt, H. von Wenckstern, M. Grundmann
Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates
APL Materials 8, 061112 (2020)

199
M. Kneiß, P. Storm, A. Hassa, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann
Growth, structural and optical properties of coherent κ-(Al_xGa_1-x)O₃/κ-Ga₂O₃ quantum well superlattice heterostructures
APL Materials 8, 051112 (2020)

198
Linus Krieg, Zhipeng Zhang, Daniel Splith, Holger von Wenckstern, Marius Grundmann, Xiaoxue Wang, Karen K Gleason, Tobias Voss
Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition
Nano Express 1, 010013 (2020)

197
Chaker Fares, Minghan Xian, David J Smith, Martha R McCartney, Max Kneiß, Holger Von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, SJ Pearton
Annealing Effects on the Band Alignment of ALD SiO₂ on (In_xGa_1-x)₂O₃ for x=0.25-0.74
ECS Journal of Solid State Science and Technology 9, 045001 (2020)

196
Anna Reinhardt, Holger von Wenckstern, Marius Grundmann
Metal-Semiconductor Field-Effect Transistors Based on the Amorphous Multi-Anion Compound ZnON
Adv. Electron. Mater. 127, 105701 (2020)

195
Chaker Fares, Minghan Xian, David J Smith, Martha R McCartney, Max Kneiß, Holger Von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, SJ Pearton
Changes in band alignment during annealing at 600℃ of ALD Al₂O₃ on (In_xGa_1-x)₂O₃ for x=0.25-0.74
J. Appl. Phys. 127, 105701 (2020)

194
A. Hassa, C. Sturm, M. Kneiß, D.Splith, H. von Wenckstern, T. Schultz, N. Koch, M. Grundmann
Solubility limit and material properties of a κ-(Al_xGa_1-x)₂O₃ 2O3 thin film with a lateral cation gradient on (00.1) Al2₂O₃ by tin-assisted PLD Epitaxial stabilization of single phase thin films up to x=0.28 on c-sapphire and κ-Ga₂O₃ templates by tin-assisted VCCS-PLD
APL Materials 8, 021103 (2020)

193
Thorsten Schultz, Max KneiKneiß, Philipp Storm, Daniel Splith, Holger von Wenckstern, Marius Grundmann, Norbert Koch
Band Offsets at κ-([Al, In]_xGa_1-x)O₃/MgO Interfaces
ACS Appl. Mater. Interfaces 7, 8879(2020).

2019

192
Robert Karsthof, Holger von Wenckstern, Jesus Zuniga-Perez, Christiane Deparis, Marius Grundmann
Nickel oxide-based heterostructures with large band offsets
phys. stat. sol. (b) 1900639 (2019).

191
Chaker Fares, Zahabul Islam, Aman Haque, MaxKneiß, Holger Von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, SJ Pearton
Effect of Annealing on the Band Alignment of ALD SiO₂ on ((Al_xGa_1-x)₂O₃ for x = 0.2 - 0.65
ECS Journal of Solid State Science and Technology 8, P751 (2019)

190
P. Storm, M. Kneiß, A. Hassa, T. Schultz, D.Splith, H. von Wenckstern, N. Koch and M. Grundmann
Epitaxial κ-(Al_xGa_1-x)₂O₃ thin films and heterostructures grown by tin-assisted VCCS-PLD
APL Materials 7, 111110 (2019), Editor's Pick

189
M. Kneiß, A. Hassa, D.Splith, C. Sturm, H. von Wenckstern, M. Lorenz and M. Grundmann
Epitaxial stabilization of single phase κ-(In_xGa_1-x)₂O₃ thin films up to x=0.28 on c-sapphire and κ-Ga₂O₃ templates by tin-assisted VCCS-PLD
APL Materials 7, 101102 (2019), Editor's Pick

188
O. Lahr, S. Vogt, H. von Wenckstern, M. Grundmann
Low-Voltage Operation of Ring Oscillators Based on Room-Temperature-Deposited Amorphous Zinc-Tin-Oxide Channel MESFETs
Adv. Electron. Mater. 1900548 (2019)

187
J. Michel, D. Splith, J. Rombach, A. Papadogianni, T. Berthold, S. Krischok, M. Grundmann, O. Bierwagen, H. von Wenckstern, M. Himmerlich
Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In₂O₃
ACS Appl. Mater. Interfaces 11, 27073 (2019)

186
C. Fares, M. Kneiß, H. von Wenckstern, M. Grundmann, M. J Tadjer, F. Ren, D. Hays, B.P. Gila, S.J. Pearton
Band Offsets of Insulating & Semiconducting Oxides on (Al_xGa_1-x)₂O₃
ECS Transactions 92, 79 (2019)

185
C. Fares, M. Kneiß, H. von Wenckstern, M. Grundmann, M. J Tadjer, F. Ren, E. Lambers, S.J. Pearton
Valence band offsets for ALD SiO₂ and Al₂O₃ on (In_xGa_1-x)₂O₃ for x = 0.25-0.74 thin films
APL Materials 7, 071115 (2019)

184
Leonard Brillson, Jonathan Cox, Hantian Gao, Geoffrey Foster, William Ruane, Alexander Jarjour, Martin Allen, David Look, Holger von Wenckstern, Marius Grundmann
Native Point Defect Measurement and Manipulation in ZnO Nanostructures
Materials 12, 2242 (2019)

183
O. Lahr, Z. Zhang, F. Grotjahn, P. Schlupp, S. Vogt, H. von Wenckstern, A. Thiede, M. Grundmann
Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs
IEEE Transactions on Electron Devices 66, 3376 (2019)

182
P. Schlupp, D. Splith, H. von Wenckstern, M. Grundmann
Electrical Properties of Vertical p-NiO/n-Ga₂O₃ and p-ZnCo₂O₄/n-Ga₂O₃ pn-Heterodiodes
Phys. Status Solidi A 216, 1800729 (2019)

181
C. Fares, M. Kneiß, H. von Wenckstern, M. Tadjer, F. Ren, E. Lambers, M. Grundmann, SJ Pearton
Band Alignment of Atomic Layer Deposited SiO₂ and Al₂O₃ on (Al_xGa_1-x)₂O₃ for x = 0.2-0.65
ECS J. Solid State Sci. Technol. 8, P351-P356 (2019)

180
A. Hassa, H. von Wenckstern, L. Vines, M. Grundmann
Influence of Oxygen Pressure on Growth of Si-Doped &beta-(Al_xGa_1-x)₂O₃ Thin Films on c-Sapphire Substrates by Pulsed Laser Deposition
ECS J. Solid State Sci. Technol. 8, Q3217-Q3220 (2019)

179
S. Müller, L. Thyen, D. Splith, A. Reinhardt, H. von Wenckstern and M. Grundmann
High-Quality Schottky Barrier Diodes on &beta-Gallium Oxide Thin Films on Glass Substrate
ECS J. Solid State Sci. Technol. 8, Q3126-Q3132 (2019)

178
A. Hassa, H. von Wenckstern, D.Splith, C. Sturm, M. Kneiß, V. Prozheeva and M. Grundmann
Structural, optical and electrical properties of orthorhombic κ-(In_xGa_1-x)₂O₃ thin films
APL Materials 7, 022525 (2019)

177
M. Kneiß, A. Hassa, D.Splith, C. Sturm, H. von Wenckstern, T. Schulz, N. Koch, M. Lorenz and M. Grundmann
Tin-Assisted PLD-Growth of κ-Ga₂O₃ Thin Films with High Crystalline Quality
APL Materials 7, 022516 (2019)

2018

176
Jonathan W Cox, Geoffrey Foster, Alex B Jarjour, Holger von Wenckstern, Marius Grundmann, Leonard J Brillson
Defect Manipulation To Control ZnO Micro-/Nanowire-Metal Contacts
Nano letters 18, 6974 (2018)

175
M. Kneiß, P. Storm, G. Benndorf, M. Grundmann and H. von Wenckstern
Combinatorial material science and strain engineering enabled by pulsed laser deposition using radially segmented targets
ACS Comb. Sci. 20, 643 (2018)

174
S. Vogt, H. von Wenckstern and M. Grundmann
MESFETs and inverters based on amorphous zinc-tin-oxide thin films prepared at room temperature
Appl. Phys. Lett. 113, 133501 (2018)

173
Hantian Gao, Shreyas Muralidharan, Nicolas Pronin, Md Rezaul Karim, Susan M. White, Thaddeus Asel, Geoffrey Foster, Sriram Krishnamoorthy, Siddharth Rajan, Lei R. Cao, Masataka Higashiwaki, Holger von Wenckstern, Marius Grundmann, Hongping Zhao, David C. Look, Leonard J. Brillson
Optical signatures of deep level defects in Ga₂O₃
Appl. Phys. Lett. 112, 242102 (2018)

172
Thorsten Schulz, Sofie Bitter, Peter Schlupp, Holger von Wenckstern, Nobert Koch, Marius Grundmann
The influence of oxygen deficiency on the rectifying behavior of transparent semiconducting oxide-metal interfaces
Phys. Rev. Appl. 9, 064001 (2018), Editors Suggestion

171
L. J. Brillson, G. M. Foster, J. Cox, W. T. Ruane, A. B. Jarjour, H. Gao, H. von Wenckstern, M. Grundmann, B. Wang, D. C. Look, A. Hyland, M. W. Allen
Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices
J. Electron. Mater. 47, 4980 (2018)

170
Daniel Splith, Stefan Müller, Holger von Wenckstern, Marius Grundmann
Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films
Proc. SPIE 10533, 105330C:1-8 (2018), David J. Rogers, David C. Look, Ferechteh H. Teherani, eds

169
R. Pickenhain, M. Schmidt, H. von Wenckstern, G. Benndorf, A. Pöppl, R. Böttcher, M. Grundmann
Negative U Properties of the Deep Level E3 in ZnO
Phys. Status Solidi B. doi:10.1002/pssb.201700670

168
V. Prozheeva, R. Hölldobler, H. von Wenckstern, M. Grundmann, F. Tuomisto
Effects of alloy composition and Si-doping on vacancy defect formation in (In_xGa_1-x)₂O₃ thin films
J. Appl. Phys. 123, 125705 (2018)

167
Tanja Jawinski, Leonard A. Wägele, Roland Scheer, Marius Grundmann, Holger von Wenckstern
Properties of In₂S₃-based pin-heterojunctions
Phys. Status Solidi A. . doi:10.1002/pssa.201700827 (2018)

166
Tilo Meister, Frank Ellinger, Johann W Bartha, Manfred Berroth, Joachim Burghartz, Martin Claus, Lothar Frey, Alessio Gagliardi, Marius Grundmann, Jan Hesselbarth, Hagen Klauk, Karl Leo, Paolo Lugli, Stefan Mannsfeld, Yiannos Manoli, Renato Negra, Daniel Neumaier, Ullrich Pfeiffer, Thomas Riedl, Susanne Scheinert, Ullrich Scherf, Andreas Thiede, Gerhard Troster, Martin Vossiek, Robert Weigel, Christian Wenger, Golzar Alavi, Markus Becherer, Carlos Alvarado Chavarin, Mohammed Darwish, Martin Ellinger, Chun-Yu Fan, Martin Fritsch, Frank Grotjahn, Marco Gunia, Katherina Haase, Philipp Hillger, Koichi Ishida, Michael Jank, Stefan Knobelspies, Matthias Kuhl, Grzegorz Lupina, Shabnam Mohammadi Naghadeh, Niko Munzenrieder, Sefa Ozbek, Mahsa Rasteh, Daniel Schrufer, Carsten Strobel, Manuel Theisen, Christian Tuckmantel, Holger von Wenckstern, Zhenxing Wang, Zhipeng Zhang
Program FFlexCom -- High frequency flexible bendable electronics for wireless communication systems
2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) , 1 (2018)

165
Max Kneiß, Chang Yang, José Barzola-Quiquia, Gabriele Benndorf, Holger von Wenckstern, Pablo Esquinazi, Michael Lorenz, Marius Grundmann
Suppression of Grain Boundary Scattering in Multifunctional p-Type Transparent γ-CuI Thin Films due to Interface Tunneling Currents
Adv. Mater. Interfaces, 1701411 (2018)

164
L Vines, C Bhoodoo, H von Wenckstern and M Grundmann
Electrical conductivity of In₂O₃ and Ga₂O₃ after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level
Journal of Physics: Condensed Matter 30, 025502 (2018)

163
Alexander Jarjour, Jon W Cox, William T Ruane, Holger von Wenckstern, Marius Grundmann, Leonard J Brillson
Single Metal Ohmic and Rectifying Contacts to ZnO Nanowires: A Defect Based Approach
Annalen der Physik 530, 1700335 (2018)

2017

162
Sofie Bitter, P. Schlupp, H. von Wenckstern, M. Grundmann
The Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc-Tin-Oxide with Various Cation Composition
ACS Materials and Interfaces 9, 26574-26581 (2017)

161
P. Schlupp, H. von Wenckstern, M. Grundmann
Schottky barrier diodes based on room temperature fabricated amorphous zinc tin oxide thin film
phys. stat. sol. (a) 214, 170021 (2017)

160
Stefan Müller, Holger von Wenckstern, Florian Schmidt, Daniel Splith, Heiko Frenzel, Marius Grundmann
Method of choice for fabrication of high-quality β-gallium oxide-based Schottky diodes
Semic. Sci. Technol. 32, 065013 (2017)

2016

159
Zhipeng Zhang, Holger von Wenckstern, Jörg Lenzner, Marius Grundmann
Wavelength-selective ultraviolet (Mg,Zn)O photodiodes: Tuning of parallel composition gradients with oxygen pressure
Appl. Phys. Lett.108, 243503 (2016)

158
Leonard Brillson, William T. Ruane, Hantian Gao, Yuanyao Zhang, Jian Luo, Holger von Wenckstern, Marius Grundmann
Spatially-Resolved Cathodoluminescence Spectroscopy of ZnO Defects
Mat. Sci. Semic. Process. 57, 197 (2016)

157
F.J. Klüpfel, H. von Wenckstern, M. Grundmann
Ring Oscillators based on ZnO Channel JFETs and MESFETs
Adv. Electr. Mater. 2, 1500431 (2016)

156
Sofie Bitter, Peter Schlupp, Michael Bonholzer, Holger von Wenckstern, Marius Grundmann
Influence of the cation ratio on optical and electrical properties of zinc-tin-oxide thin films from pulsed-laser deposition
ACS Comb. Sci. 18, 188 (2016)

155
Zhipeng Zhang, Holger von Wenckstern, Jörg Lenzner, Michael Lorenz, Marius Grundmann
Visible-blind and solar-blind ultraviolet photodiodes based on (In_xGa_1-x)₂O₃
Appl. Phys. Lett., 108, 123503 (2016)

154
W.T. Ruane, K.M. Johansen, K. Leedy, D.C. Look, H. von Wenckstern, M. Grundmann, L.J. Brillson
Defect Segregation and Optical Emission in ZnO Nano- and Microwires
Nanoscale 8, 7631 (2016)

2015

153
Robert Karsthof, Paul Räcke, Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann
Semi-transparent n-ZnO/p-NiO UV solar cells
phys. stat. sol. (a) 213, 30 (2015)

152
R. Karsthof, H. von Wenckstern, M. Grundmann
Transparent JFETs Based on p-NiO/n-ZnO Heterojunctions
Electron Devices, IEEE Transactions on 62, 3999 (2015)

151
A. Mavlonov, S. Richter, H. von Wenckstern, R. Schmidt-Grund, J. Lenzner, M. Lorenz, M. Grundmann
Doping efficiency and limits in (Mg, Zn)O:Al, Ga thin films with two-dimensional lateral composition spread
phys. stat. sol. (a) 212, 2850 (2015)

150
Holger von Wenckstern, Daniel Splith, Anna Werner, Stefan Müller, Michael Lorenz, Marius Grundmann
Properties of Schottky barrier diodes on (In_xGa_1-x)₂O₃ for 0.01 < x < 0.85 determined by using a combinatorial approach
ACS Comb. Sci. 17, 710 (2015)

149
Stefan Müller, Holger von Wenckstern, Florian Schmidt, Daniel Splith, Friedrich-Leonhard Schein, Heiko Frenzel, Marius Grundmann
Comparison of Schottky contacts on β-gallium oxide thin films and bulk crystals
Applied Physics Express 8, 121102 (2015)

148
F. Schmidt, D. Splith, S. Müller, H. von Wenckstern, M. Grundmann
Electronic defects in In₂O₃ and In₂O₃:Mg thin films on r-plane sapphire
phys. stat. sol. (b) 252, 2304 (2015)

147
Sylvio Schubert, Florian Schmidt, Holger von Wenckstern, Marius Grundmann, Karl Leo, Lars Müller-Meskamp
Eclipse Pulsed Laser Deposition for Damage-Free Preparation of Transparent ZnO Electrodes on Top of Organic Solar Cells
Adv. Mater. 25, 4321 (2015)

146
R. Schmidt-Grund, Ch. Kranert, H. von Wenckstern, V. Zviagin, M. Lorenz and M. Grundmann
Dielectric function in the spectral range (0.5 - 8.5) eV of an (Al_xGa_1-x)₂O₃ thin film with continuous composition spread
J. Appl. Phys. 117, 165307 (2015)

145
Heiko Frenzel, Tobias Dö, Peter Schlupp, Holger von Wenckstern and Marius Grundmann
Long-throw magnetron sputtering of amorphous Zn-Sn-O-thin films at room temperature
phys. stat. sol. (a) 212, 1482 (2015)

144
Michael Lorenz, Tobias Weiss, Florian Schmidt, Holger von Wenckstern and Marius Grundmann
Aluminium- and gallium-doped homoepitaxial ZnO thin films: strain-engineering and electrical performance
phys. stat. sol. (a) 212, 1440 (2015)

143
Christian Kranert, Marcus Jenderka, Jorg Lenzner, Michael Lorenz, Holger von Wenckstern, Rüdiger Schmidt-Grund and Marius Grundmann
Lattice parameters and Raman-active phonon modes of β-(Al_xGa_1-x)₂O₃
J. Appl. Phys. 117, 125703 (2015)

142
H. von Wenckstern, D. Splith, S. Lanzinger, F. Schmidt, S. Müller, P. Schlupp, R. Karsthof, M. Grundmann
pn-heterodiodes with n-type In₂O₃
Adv. Electron. Mater. 1, 1400026 (2015)

141
F. Klüpfel, H. von Wenckstern, M. Grundmann
Low Frequency Noise of ZnO based MESFETs
Appl. Phys. Lett. 106, 033502 (2015)

140
P. Schlupp, F.-L. Schein, H. von Wenckstern, M. Grundmann
All Amorphous Oxide Bipolar Heterojunction Diodes from Abundant Metals
Adv. Electron. Mater. 1, 1400023 (2015)

139
R. Schewski, G. Wagner, M. Baldini, D. Gogova, Z. Galazka, R. Uecker, T. Schulz, T. Remmele, T. Markurt, H. von Wenckstern, M. Grundmann, O. Bierwagen, P. Vogt, M. Albrecht
Strain induced stabilization of α-Ga₂O₃ in the epitaxial growth of Ga₂O₃ on α-Al₂O₃ (0001)
Appl. Phys. Express 8, 011101 (2015)

138
H. von Wenckstern, D. Splith, M. Purfürst, Z. Zhang, Ch. Kranert, S. Müller, M. Lorenz, M. Grundmann
Structural and optical properties of (In,Ga)₂O₃ thin films and characteristics of Schottky contacts thereon
Semic. Sci. Technol. 30, 024005 (2015)

2014

137
M. Grundmann, F.L. Schein, R. Karsthof, P. Schlupp, H. von Wenckstern
Several Approaches to Bipolar Oxide Diodes with High Rectification
Adv. Sci. Technol. 93, 252 (2014)

136
Stefan Müller, Holger von Wenckstern, Marius Grundmann, Robert Heinold, Martin Allen
Method of choice for fabrication of high-quality ZnO-based Schottky diodes
J. Appl. Phys. 116, 194506 (2014)

135
F. Schmidt, S. Müller, H. von Wenckstern, G. Benndorf, R. Pickenhain and M. Grundmann
Impact of strain on defects in (Mg,Zn)O thin films
J. Appl. Phys. 116, 103703 (2014)

134
Marius Grundmann, Robert Karsthof, Holger von Wenckstern
The recombination current in type-II heterostructure bipolar diodes
ACS Appl. Mat. & Interf. 6, 14785 (2014)

133
R. Schmidt-Grund, Ch. Kranert, T. Böntgen, H. von Wenckstern, H. Krauß, M. Grundmann
Dielectric function in the NIR-VUV spectral range of (In_xGa_1-x)₂O₃ thin films
J. Appl. Phys. 116, 053510 (2014)

132
Ch. Kranert, J. Lenzner, M. Jenderka, M. Lorenz, H. von Wenckstern, R. Schmidt-Grund, M. Grundmann
Lattice parameters and Raman-active phonon modes of (In_xGa_1-x)₂O₃ for x < 0.4
J. Appl. Phys. 116, 013505 (2014)

131
H. von Wenckstern, D. Splith, F. Schmidt, M. Grundmann, O. Bierwagen, J.S. Speck
Schottky contacts to In₂O₃
APL Materials 2, 046104 (2014)

130
Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann
Monolithic multichannel ultraviolet photodiodes based on (Mg,Zn)O thin films with continuous composition spreads
IEEE J. Sel. Top. Quantum Electr. 20, 3801606 (2014)

129
F. Schmidt, S. Müller, R. Pickenhain, H. von Wenckstern, S. Geburt, C. Ronning, M. Grundmann
Defect studies on Ar-implanted ZnO thin films
phys. stat. sol. (b) 251, 937 (2014)

128
F.-L. Schein, M. Winter, T. Böntgen, H. von Wenckstern, M. Grundmann
Highly rectifying p-ZnCo₂O₄/n-ZnO heterojunction diodes
Appl. Phys. Lett. 104, 022104 (2014)

127
F. Schmidt, P. Schlupp, S. MÅ¸ller, Ch. P. Dietrich, H. von Wenckstern, M. Grundmann, R. Heinhold, H.-S. Kim and M. Ward Allen
A DLTS study of a ZnO microwire, a thin film and bulk material
Proc. Mat. Res. Soc. 1633, 51 (2014)

126
P. Schlupp, H. von Wenckstern, M. Grundmann
Amorphous zinc tin oxide thin films fabricated by pulsed-laser deposition at room temperature
Proc. Mat. Res. Soc. 1633, 101 (2014)

125
H. von Wenckstern, Z. Zhang, J. Lenzner, F. Schmidt and M. Grundmann
A continuous composition spread approach towards monolithic, wavelength-selective multichannel UV-photo-detector arrays
Proc. Mat. Res. Soc. 1633, 123 (2014)

124
Daniel Splith, Stefan Müller, Florian Schmidt, Holger von Wenckstern, Johan Janse van Rensburg, Walter E. Meyer, Marius Grundmann
Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga₂O₃ thin films grown by pulsed laser deposition
phys. stat. sol. (a) 211, 40 (2014)

123
S. Puttnins, S. Jander, A. Wehrmann, G. Benndorf, M. Stölzel, A. Müller, H. von Wenckstern, F. Daume, A. Rahm, M. Grundmann
Breakdown characteristics of flexible Cu(In,Ga)Se2 solar cells
Sol. Energy Mat. Sol. Cells 120, 506 (2014)

122
F. Schmidt, H. von Wenckstern, O. Breitenstein, R. Pickenhain, M. Grundmann
Low Rate Deep Level Transient Spectroscopy: A powerful tool for defect characterization in wide bandgap semiconductors
Solid State Electron. 92, 40 (2014)

121
Stefan Müller, Holger von Wenckstern, Daniel Splith, Florian Schmidt, Marius Grundmann
Control of the conductivity of Si-doped β-Ga₂O₃ thin films via growth temperature and pressure
phys. stat. sol. (a) 211, 34 (2014)

2013

120
Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann
Energy-selective multichannel ultraviolet photodiodes based on (Mg,Zn)O
Appl. Phys. Lett. 103, 171111 (2013)

119
H. von Wenckstern, Z. Zhang, F. Schmidt, J. Lenzner, H. Hochmuth and M. Grundmann
Continuous composition spread using pulsed-laser deposition with a single, segmented target
CrystEngComm 15, 10020-10027 (2013)

118
F. Schmidt, S. Müller, H. von Wenckstern, C.P. Dietrich, R. Heinhold, M.W. Allen, M. Grundmann
Comparative Study of Deep Defects in ZnO Microwires, Thin Films and Bulk Single Crystals
Appl. Phys. Lett. 103, 062102 (2013)

117
F.J. Klüpfel, F.L. Schein, M. Lorenz, H. Frenzel, H. von Wenckstern, M. Grundmann
Comparison of ZnO-based JFET, MESFET, and MISFET
IEEE Transact. Electr. Dev. 60, 1828-1833 (2013)

116
Friedrich-Leonhard Schein, Holger von Wenckstern, Marius Grundmann
Transparent p-CuI/n-ZnO heterojunction diodes
Appl. Phys. Lett. 102, 092109 (2013)

115
D. Diering, D. Spemann, J. Lenzner, St. Müller, T. Böntgen and H. von Wenckstern
Greyscale proton beam writing in p-type Gallium Arsenide
Nuclear Instruments and Methods in Physics Research B 306, 275 (2013)

114
A. Lajn, H. von Wenckstern, M. Grundmann, G. Wagner, P. Barquinha, E. Fortunato, R. Martins
Comparative study of transparent rectifying contacts on semiconducting oxide single crystals and amorphous thin films
J. Appl. Phys. 113, 044511 (2013)

2012

113
H. von Wenckstern, R. Schmidt-Grund, C. Bundesmann, A. Müller, C.P. Dietrich, M. Stölzel, M. Lange and M. Grundmann
The (Mg,Zn)O Alloy
Handbook of Zinc Oxide and Related Materials, Vol. 1 Materials, p. 257-320 (2012), Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855706

112
Heiko Frenzel, Michael Lorenz, Friedrich-L Schein, Alexander Lajn, Fabian J Klüpfel, Tobias Diez, Holger von Wenckstern, Marius Grundmann
Metal-Semiconductor Field-Effect Transistors and Integrated Circuits Based on ZnO and Related Oxides
Handbook of Zinc Oxide and Related Materials, Vol. 2 Devices and Nano-Engineering, p. 369-434 (2012), Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855706

111
M. Lorenz, A. Reinhardt, H. von Wenckstern and M. Grundmann
Design rules of (Mg, Zn) O-based thin-film transistors with high-k WO₃ dielectric gates
Appl. Phys. Lett. 101, 183502 (2012)

110
R. Heinhold, H.S. Kim, F. Schmidt, H. von Wenckstern, M. Grundmann, R.J. Mendelsberg, R.J. Reeves, S.M. Durbin and M.W. Allen
Optical and defect properties of hydrothermal ZnO with low lithium contamination
Appl. Phys. Lett. 101, 062105 (2012)

109
Florian Schmidt, Holger von Wenckstern, Daniel Spemann, Marius Grundmann
On the radiation hardness of (Mg,Zn)O PLD thin films
Appl. Phys. Lett. 101, 012103 (2012)

108
Matthias Schmidt, Holger von Wenckstern, Rainer Pickenhain, Marius Grundmann
On the investigation of electronic defect states in ZnO thin films by space charge spectroscopy with optical excitation
Solid State Electron. 75, 48 (2012)

107
Friedrich-Leonhard Schein, Holger von Wenckstern, Heiko Frenzel, and Marius Grundmann
ZnO-based n-channel junction field-effect transistor with room-temperature fabricated p-type ZnCo₂O₄-gate
IEEE Electron Device Letters 33, 676 (2012)

106
S. Müller, H. von Wenckstern, O. Breitenstein, J. Lenzner, M. Grundmann
Microscopic identification of hot spots in multi-barrier Schottky contacts on pulsed laser deposition grown zinc oxide thin films
IEEE Transact. Electr. Dev. 59, 536 (2012)

105
J.P. Richter, J. Kaden, M. Gnauck, C. Ronning, C.P. Dietrich, H. von Wenckstern, M. Grundmann, J. Gutowski, T. Voss
Modal gain and its diameter dependence in single ZnO micro- and nanowires
Semicond. Sci. Technol. 27, 015005 (2012)

104
M. Schmidt, M. Ellguth, R. Karsthof, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, F. C. C. Ling
On the T2 trap in zinc oxide thin films
phys. stat. sol. (b) 249, 588 (2012)

2011

103
Michael Lorenz, Holger von Wenckstern, Marius Grundmann
Tungsten oxide as gate dielectric for highly transparent and temperature-stable zincoxide-based thin-film transistors
Adv. Mater. 23, 5383 (2011)

102
Zhipeng Zhang, Holger von Wenckstern, Matthias Schmidt, Marius Grundmann
Wavelength selective metal-semiconductor-metal photodetectors based on (Mg,Zn)O-heterostructures
Appl. Phys. Lett. 99, 083502 (2011)

101
F.J. Klüpfel, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann
Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors
J. Appl. Phys. 109, 074515 (2011)

100
Matthias Schmidt, Kerstin Brachwitz, Florian Schmidt, Martin Ellguth, Holger von Wenckstern, Rainer Pickenhain, Marius Grundmann, Gerhard Brauer, Wolfgang Skorupa
Nickel-related defects in ZnO - A deep-level transient spectroscopy and photo-capacitance study
phys. stat. sol (b) 248, 1949 (2011)

99
C.P. Dietrich, M. Lange, F.J. Klüpfel, H. von Wenckstern, R. Schmidt-Grund and M. Grundmann
Strain distribution in bent ZnO microwires
Appl. Phys. Lett. 98, 031105 (2011)

98
A. Lajn, T. Diez, F. Schein, H. Frenzel, H. von Wenckstern, M. Grundmann
Light and temperature stability of fully transparent ZnO-based inverter circuits
IEEE Electron Device Letters 32, 515 (2011)

97
C.P. Dietrich, M. Brandt, M. Lange, J. Kupper, T. Böntgen, H. von Wenckstern and M. Grundmann
Defect properties of ZnO and ZnO:P microwires
J. Appl. Phys. 109, 013712 (2011)

96
M. Lange, C.P. Dietrich, J. Zúniga-Pérez, H. von Wenckstern, M. Lorenz, M. Grundmann
MgZnO/ZnO quantum well nanowire heterostructures with large confinement energies
J. Vac. Sci. Techol. A 29, 03A104 (2011)

95a
A. Lajn, M.Schmidt, H. von Wenckstern, and M. Grundmann
Erratum to: Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO
J. Electron. Mater. 40, 477 (2011)

95
A. Lajn, M.Schmidt, H. von Wenckstern, and M. Grundmann
Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO
J. Electron. Mater. 40, 473 (2011)

94
M. Brandt, H. von Wenckstern, M. Stölzel, H. Hochmuth, M. Lorenz, M. Grundmann
Semiconducting oxide heterostructures
Semicond. Sci. Technol. 26,014040 (2011)

93
M. Lorenz, Holger Hochmuth, Christoph Grüner, Helena Hilmer, Alexander Lajn, D. Spemann, Matthias Brandt, Jan Zippel, R. Schmidt-Grund, H. Von Wenckstern and Marius Grundmann
Oxide thin film heterostructures on large area, with flexible doping, low dislocation density and abrupt interfaces grown by Pulsed Laser Deposition
Laser Chemistry 2011, 140976 (27 pages), (Hindawi, New York, 2011)

2010

92
M. Lorenz, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann, P. Barquinha, R. Martins, E. Fortunato
Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films
Appl. Phys. Lett. 97, 243506 (2010)

91
Dominik Lausch, Kai Petter, Ronny Bakowskie, Christian Czekalla, Jörg Lenzner, Holger von Wenckstern and Marius Grundmann
Identification of Pre-Breakdown Mechanism of Silicon Solar Cells at Low Reverse Voltages
Appl. Phys. Lett. 97, 073506 (2010)

90
Martin Ellguth, Matthias Schmidt, Rainer Pickenhain, Holger von Wenckstern, Marius Grundmann
Characterization of point defects in ZnO thin films by optical deep level transient spectroscopy
phys. stat. sol. (b), doi: 10.1002/pssb.201046244, (2010)

89
B.Q. Cao, M. Lorenz, G. Zimmermann, C. Czekalla, M. Brandt, H. von Wenckstern, M. Grundmann
p-type Phosphorus Doped ZnO Wires for Optoelectronic Applications
in Nanowires, Paola Prete (ed.), pp. 117-132, ISBN: 978-953-7619-79-4

88
W. Anwand, G. Brauer, T.E. Cowan, V. Heera, H. Schmidt, W. Skorupa, H. von Wenckstern, G. Benndorf, M. Grundmann
Structural characterization of H plasma-doped ZnO single crystals by Hall measurements and photoluminescence studies
phys. stat. sol. (a) doi: 10.1002/pssa.201026311, (2010)

87
Stefan Lautenschlaeger, Sebastian Eisermann, Michael N. Hofmann, Udo Roemer, Melanie Pinnisch, Andreas Laufer, Bruno K. Meyer, Holger von Wenckstern, Alexander Lajn, Florian Schmidt, Marius Grundmann, Juergen Blaesing and Alois Krost
Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers
J. Cryst. Growth 312, 2078 (2010)

86
H. Frenzel, A. Lajn, H. von Wenckstern and M. Grundmann
Ultrathin gate-contacts for MESFET devices: A new approach in transparent electronics
J. Appl. Phys. 107, 114515 (2010)

85
H. Frenzel, F. Schein, A. Lajn, H. von Wenckstern, and M. Grundmann
High-gain integrated inverters based on ZnO metal-semiconductor field-effect transistor technology
Appl. Phys. Lett. 96, 113502 (2010)

84
M. Brandt, H. von Wenckstern, G. Benndorf, M. Lange, C.P. Dietrich, C. Kranert, C. Sturm, R. Schmidt-Grund, H. Hochmuth, M. Lorenz, M. Grundmann, M.R. Wagner, M. Alic, C. Nenstiel and A. Hoffmann
Identification of a donor-related recombination channel in ZnO thin films
Phys. Rev. B 81, 073306 (2010)

83
M. Schmidt, M. Ellguth, F. Schmidt, Th. Lüder, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa
Defects in a nitrogen-implanted thin film
phys. stat. sol. (b) 247, 1220 (2010)

82
M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, H. von Wenckstern
Transparent Semiconducting Oxides: Materials and Devices
phys. stat. sol. (a) (available online)(2010)

81
R. Kaden, G. Wagner, C. Strum, R. Schmidt-Grund, H. von Wenckstern, A. Prager, K. Bente, M. Grundmann
Synthesis and physical properties of cylindrite micro tubes and lamellae
phys. stat. sol. (b) 247, 1335 (2010)

80
A. Lajn, H. v. Wenckstern, G. Benndorf, C. P. Dietrich, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann
Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films
J. Electron. Mater. 39, 595 (2010)

79
J.Chai, R.J. Mendelsberg, R.J. Reeves, J. Kennedy, H. von Wenckstern, M. Schmidt, M. Grundmann, K. Doyle, T.H. Myers, and S. M. Durbin
Identification of a Deep Acceptor Level in ZnO Due to Silver Doping
J. Electron. Mater. 39, 577 (2010)

78
Holger von Wenckstern, Stefan Müller, Gisela Biehne, Holger Hochmuth, Michael Lorenz and Marius Grundmann
Dielectric passivation of ZnO-based Schottky diodes
J. Electron. Mater. 39, 559 (2010)

77
Holger von Wenckstern, Kerstin Brachwitz, Matthias Schmidt, Christoph Dietrich, Martin Ellguth, Marko Stölzel, Michael Lorenz and Marius Grundmann
The E3 defect in MgZnO
J. Electron. Mater. 39, 584 (2010)

76
Michael Lorenz, Matthias Brandt, Martin Lange, Gabriele Benndorf, Holger von Wenckstern, Detlef Klimm, Marius Grundmann
Homoepitaxial Mg_xZn_1-xO (0 &le x &le 0.22) thin films grown by Pulsed Laser Deposition
Thin Solid Films 518, 4623 (2010)

75
C.P. Dietrich, M. Lange, G. Benndorf, H. von Wenckstern, M. Grundmann
Donor-acceptor pair recombination in non-stoichiometric ZnO thin films
Sol. Stat. Comm. 150, 379 (2010)

74
J. Zippel, S. Heitsch, M. Stölzel, A. Müller, H. von Wenckstern, G. Benndorf, M. Lorenz, H. Hochmuth, M. Grundmann
Optical properties of homo- and heteroepitaxial ZnO/Mg_xZn_1-xO quantum wells grown by pulsed laser deposition
J. Luminescence 130, 520 (2010)

73
H. von Wenckstern, Z. P. Zhang, M. Lorenz, C. Czekalla, H. Frenzel, A. Lajn and M. Grundmann
Light beam induced current measurements on ZnO Schottky diodes and MESFETs
Zinc Oxide and Related Materials - 2009, edited by Steve Durbin, Li-Chyong Chen, Martin Allen, and Holger von Wenckstern (Mater. Res. Soc. Symp. Proc. Volume 1201, Warrendale, PA, 2010), 1201-H04-02

72
Christof Peter Dietrich, Alexander Müller, Marko Stölzel, Martin Lange, Gabriele Benndorf, Holger von Wenckstern, Marius Grundmann
Bound-exciton recombination in Mg_xZn_1-xO thin films
Zinc Oxide and Related Materials - 2009, edited by Steve Durbin, Li-Chyong Chen, Martin Allen, and Holger von Wenckstern (Mater. Res. Soc. Symp. Proc. Volume 1201, Warrendale, PA, 2010), 1201-H03-08

71
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern, F. Schein, M. Lorenz
ZnO-based MESFET Devices
Zinc Oxide and Related Materials - 2009, edited by Steve Durbin, Li-Chyong Chen, Martin Allen, and Holger von Wenckstern (Mater. Res. Soc. Symp. Proc. Volume 1201, Warrendale, PA, 2010), 1201-H01-01

70
Heiko Frenzel, Holger von Wenckstern, Alexander Lajn, Matthias Brandt, Gisela Biehne, Holger Hochmuth, Michael Lorenz and Marius Grundmann
Interface effects in ZnO metal-insulator-semiconductor- and metal semiconductor-strutures
AIP Conf. Proc. 1199, 469 (2010)

69
Holger von Wenckstern, Alexander Lajn, Andreas Laufer, Bruno K. Meyer, Holger Hochmuth, Michael Lorenz and Marius Grundmann
Ag related defect state in ZnO thin films
AIP Conf. Proc. 1199, 122 (2010)

68
H. von Wenckstern, J. Zippel, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz and M. Grundmann
Two-dimensional electron gases in MgZnO/ZnO heterostructures
AIP Conf. Proc. 1199, 99 (2010)

2009

67
Michael Binnewies, Sonja Locmelis, Bruno Meyer, Angelika Polity, Detley M. Hofmann, Holger von Wenckstern
Gas phase synthesis of ionic solid solutions-crystalline bulk materials and thin films
Prog. Sol. Stat. Chem. 37, 57-69 (2009).

66
R. Bakowskie, H. von Wenckstern, D. Lausch, M. Müller, K. Petter, M. Grundmann
Thermal admittance spectroscopy of multicrystalline silicon wafers and solar cells
Proc. 24th European Photovoltaic Solar Energy Conference, 2DV.1.30

65
D. Lausch, K. Petter, R. Bakowskie, H. von Wenckstern, M. Grundmann
Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells
Proc. 24th European Photovoltaic Solar Energy Conference, 2DV.1.17

64
H. Frenzel, M. Lorenz jr., A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, and M. Grundmann
ZnO-based metal-semiconductor field-effect transistors on glass substrates
Appl. Phys. Lett. 95, 153503 (2009).

63
Martin W. Allen, Steven M. Durbin, Xiaojun Weng, Joan M. Redwing, K. Sarpatwari, Suzanne E. Mohney, Holger von Wenckstern, and Marius Grundmann
Temperature-Dependent Properties of Nearly Ideal ZnO Schottky Diodes
IEEE Transaction on Electron Devices 56, 2160-2164 (2009)

62
Dominik Lausch, Kai Petter, Holger von Wenckstern, Marius Grundmann
Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells
phys. stat. sol. RRL 3, 70 (2009)

61
Matthias Brandt, Holger von Wenckstern, Gabriele Benndorf, Holger Hochmuth, Michael Lorenz, Marius Grundmann
Formation of a two-dimensional electron gas in in ZnO/MgZnO single heterostructures and quantum wells
Thin Solid Films 518, 1048 (2009)

60
H. Frenzel, A. Lajn, M. Brandt, H. von Wenckstern, G. Biehne, H. Hochmuth, and M. Grundmann
ZnO-based metal-semiconductor field-effect transistors with Ag-, Pt-, Pd-, and Au-Schottky gates
Thin Solid Films 518, 1119 (2009)

59
A. Lajn, H. von Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Künzel, C. Vogt, R. Deneke
Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type ZnO
J. Vac. Sci. Technol. B 27, 1769 (2009)

58
M. Brandt, H. von Wenckstern, C. Dietrich, G. Benndorf, J. Zippel, A. Abdullah, C. Meinecke, T. Butz, H. Hochmuth, M. Lorenz, M. Grundmann
Dopant activation in homoepitaxial MgZnO:P thin films
J. Vac. Sci. Technol. B 27, 1604 (2009)

57
M. Schmidt, M. Ellguth, C. Czekalla, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa, M. Helm, Q. Gu, Ch.Ch. Ling
Defects in Zinc implanted ZnO thin films
J. Vac. Sci. Technol. B 27, 1597 (2009)

56
M. Lorenz, B. Cao, G. Zimmermann, G. Biehne, C. Czekalla, H. Frenzel, M. Brandt, H. von Wenckstern, M. Grundmann
Stable p-type ZnO:P nanowire / n-type ZnO:Ga film junctions, reproducibly grown by two-step pulsed laser deposition
J. Vac. Sci. Technol. B 27, 1693 (2009)

55
M. Lorenz, M. Brandt, G. Wagner, H. Hochmuth, G. Zimmermann, H. von Wenckstern and M. Grundmann
MgZnO:P homoepitaxy by pulsed laser deposition: pseudomorphic layer-by-layer growth and high electron mobility
Proc. SPIE 7217, 72170N (2009)

2008

54
M. Brandt, H. von Wenckstern, H. Schmidt, A. Rahm, G. Biehne, G. Benndorf, H. Hochmuth, M. Lorenz, C. Meinecke, T. Butz and M. Grundmann
High electron mobility of phosphorous doped homoepitaxial ZnO thin films grown by pulsed laser deposition
J. Appl. Phys. 104, 013708 (2008)

53
M. Lorenz, G. Wagner, A. Rahm, H. Schmidt, H. Hochmuth, H. Schmid, W. Mader, M. Brandt, H. von Wenckstern, M. Grundmann
Homoepitaxial ZnO thin films by PLD: Structural properties
phys. stat. sol. (c) 5, 3280 (2008)

52
H. Frenzel, A. Lajn, M. Brandt, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann
ZnO metal-semiconductor field-effect transistors with Ag-Schottky-gates
Appl. Phys. Lett. 92, 192108 (2008)

51
H. von Wenckstern, H. Hochmuth, G Biehne, M. Lorenz, M. Grundmann, F. D. Auret, W. E. Meyer, P. J. J. van Rensburg, M. Hayes, J. M. Nel
Dependence of trap concentrations in ZnO thin films on annealing conditions
J. Korean Phys. Soc. 53, 3064 (2008)

50
Holger von Wenckstern, Matthias Brandt, Heidemarie Schmidt, Christian Hanisch, Gabriele Benndorf, Holger Hochmuth, Michael Lorenz, Marius Grundmann
Homoepitaxial ZnO thin films by pulsed-laser deposition
J. Korean Phys. Soc. 53, 2861 (2008)

49
H. von Wenckstern, M. Brandt, H. Schmidt, G. Benndorf, J. Zippel, H. Hochmuth,M. Lorenz, M. Grundmann
Properties of homoepitaxial ZnO and ZnO:P thin films grown by pulsed-laser deposition
Proc. SPIE 6895, 689505 (2008)

48
F. D. Auret, W. E. Meyer, P. J. Janse van Rensburg, M. Hayes, J. M. Nel, H. von Wenckstern, G. Biehne, M. Lorenz, M. Grundmann,
Electronic properties of shallow level defects in ZnO grown by pulsed laser deposition
J. Phys.: Conf. Ser. 100, 042038 (2008)

47
Martin Allen, Holger von Wenckstern, Marius Grundmann, Stuart Hatfield, Paul Jefferson, Philip King, Timothy Veal, Chris McConville, Steven Durbin
Mechanisms in the Formation of High Quality Schottky Contacts to n-type ZnO
Mater. Res. Soc. Symp. Proc. 1035E, Warrendale, PA, 2008), 1035-L10-06 (2008)

46
B. Q. Cao, M. Lorenz, A. Rahm, H. von Wenckstern, C. Czekalla, J. Lenzner, G. Benndorf and M. Grundmann
p-type conducting ZnO:P microwires prepared by direct carbothermal growth
phys. stat sol. (RRL) 2, 37 (2008)

2007

45
F. Danie Auret, W.E. Meyer, P.J. Janse van Rensburg, M. Hayes, J.M. Nel, Holger von Wenckstern, H. Schmidt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 meV and 370 meV below the conduction band
Physica B 401-402, 378 (2007)

44
B. Cao, M. Lorenz, M. Brandt, H. von Wenckstern, J. Lenzner, G. Biehne, M. Grundmann
Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition
Nanotechnology 18, 455707 (2007)

43
H. Frenzel, H. von Wenckstern, A. Weber, H. Schmidt, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann
Photocurrent spectroscopy of deep levels in ZnO thin films
Phys. Rev. B 76, 035214 (2007)

42
H. von Wenckstern, H. Schmidt, M. Grundmann, M. W. Allen, P. Miller, R. J. Reeves, and S. M. Durbin
Defects in hydrothermally grown bulk ZnO
Appl. Phys. Lett. 91, 022913 (2007)

41
H. von Wenckstern, H. Schmidt, C. Hanisch, M. Brandt, C. Czekalla, G. Benndorf, G. Biehne, A. Rahm, H. Hochmuth, M. Lorenz, and M. Grundmann
Homoepitaxy of ZnO by Pulsed-Laser Deposition
phys.stat.sol. (RRL) 1, No. 4, 129-131 (2007)

40
Holger von Wenckstern, Matthias Brandt, Gregor Zimmermann, Jörg Lenzner, Holger Hochmuth, Michael Lorenz, Marius Grundmann
Temperature dependent Hall measurements on PLD thin films
in Zinc Oxide and Related Materials, edited by Jürgen Christen, Chennupati Jagadish, David C. Look, Takafumi Yao, and Frank Bertram (Mater. Res. Soc. Symp. Proc. 957, Warrendale, PA, 2007), 0957-K03-02

39
Marius Grundmann, Andreas Rahm, Thomas Nobis, Holger von Wenckstern, Christian Czekalla, Jörg Lenzner, Michael Lorenz
Growth and Characterization of Optical and Electrical Properties of ZnO Nano- and Microwires
in Zinc Oxide and Related Materials, edited by Jürgen Christen, Chennupati Jagadish, David C. Look, Takafumi Yao, and Frank Bertram (Mater. Res. Soc. Symp. Proc. 957, Warrendale, PA, 2007), 0957-K06-09

38
G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, H. von Wenckstern, M. Brandt, M. Lorenz, and M. Grundmann
Defects in N⁺ ion-implanted ZnO single crystals studied by positron annihilation and Hall effect
phys.stat.sol. (c) 4, No. 10, 3642 (2007)

37
Chris Sturm, Rüdiger Schmidt-Grund, Ronny Kaden, Holger von Wenckstern, Bernd Rheinländer, Klaus Bente, Marius Grundmann
Optical Properties of Cylindrite
Proc. Int. Conf. on the Physics of Semiconductors (ICPS-28), Wien, Austria, 2006, W. Jantsch, F. Schäffler, eds.; AIP Conf. Proc. 893, 1483 (2007) (in press)

36
H. Frenzel, H. von Wenckstern, A. Weber, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Measurement of deep intrinsic defects in thin ZnO films via mid-infrared photocurrent spectroscopy
Proc. Int. Conf. on the Physics of Semiconductors (ICPS-28), Wien, Austria, 2006, W. Jantsch, F. Schäffler, eds.; AIP Conf. Proc. 893, 301 (2007) (in press)

35
H. von Wenckstern, R. Pickenhain, H. Schmidt, M. Brandt, G. Biehne, M. Lorenz, M. Grundmann, and G. Brauer
Investigation of acceptor states in ZnO by junction DLTS
Superlattices and Microstructures 42, 14 (2007).

34
G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, C. Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, M. Grundmann
Comparative characterization of differently grown ZnO single crystals by positron annihilation and Hall effect
Superlattices and Microstructures 42, 259 (2007).

33
Mariana Ungureanu, Heidemarie Schmidt, Qingyu Xu, Holger von Wenckstern, Daniel Spemann, Holger Hochmuth, Michael Lorenz and Marius Grundmann
Electrical and magnetic properties of RE-doped ZnO thin films (RE = Gd, Nd)
Superlattices and Microstructures 42,231 (2007).

32
Michael Lorenz, Matthias Brandt, Jürgen Schubert, Holger Hochmuth, Holger von Wenckstern, Mathias Schubert, and Marius Grundmann
Polarization coupling in epitaxial ZnO / BaTiO3 thin film heterostructures on SrTiO3 (100) substrates
Proc. SPIE Vol. 6474, 64741S (Feb. 20, 2007)

31
H. Schmidt, M. Diaconu, H. Hochmuth, G. Benndorf, H. von Wenckstern, G. Biehne, M. Lorenz, and M. Grundmann
Electrical and optical spectroscopy on ZnO:Co thin films
Appl. Phys. A, 88, 157 (2007)

30
H. von Wenckstern, M. Brandt, H. Schmidt, G. Biehne, R. Pickenhain, H. Hochmuth, M. Lorenz, M. Grundmann
Donor like defects in ZnO substrate materials and ZnO thin films
Appl. Phys. A, 88, 135 (2007)

29
H. von Wenckstern, G. Benndorf, S. Heitsch, J. Sann, M. Brandt, H.Schmidt, J. Lenzner, M. Lorenz, A. Yu. Kuznetsov, B.K. Meyer, M.Grundmann
Properties of P-doped ZnO
Appl. Phys. A, 88, 125 (2007)

28
R. Johne, M. Lorenz, H. Hochmuth, J. Lenzner, H. von Wenckstern, G. Zimmermann, H. Schmidt, R. Schmidt-Grund, M. Grundmann
Cathodoluminescence of large-area PLD grown ZnO thin films measured in transmission and reflection
Appl. Phys. A, 88, 89 (2007)

2006

27
Holger von Wenckstern, Rainer Pickenhain, Heidemarie Schmidt, MatthiasBrandt, Gisela Biehne, Michael Lorenz, Marius Grundmann and Gerhard Brauer
Deep acceptor states in ZnO single crystals
Appl. Phys. Lett. 89, 092122 (2006).

26
G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, C.Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, and M. Grundmann
Defects in virgin and N-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy
Phys. Rev. B 74, 045208 (2006).

25
M. Diaconua, H. Schmidt, H. Hochmuth, M. Lorenz, G. Benndorf, D.Spemann, A. Setzer, P. Esquinazi, A. Pöppl, H. von Wenckstern, K.-W.Nielsen, R. Gross, H. Schmid, W. Mader, G. Wagner and M. Grundmann
Room-temperature ferromagnetic Mn-alloyed ZnO films obtained by pulsed laser deposition
J. of Magnetism and Magnetic Materials 307, 212 (2006).

24
M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, H. von Wenckstern, G. Biehne, D. Spemann and M. Grundmann
Deep defects generated in n-conducting ZnO:TM thin films
Solid State Commun.137, 417 (2006).

23
Holger von Wenckstern, Gisela Biehne, R. Abdel Rahman, Holger Hochmuth, Michael Lorenz, and Marius Grundmann
Mean barrier height of Pd Schottky contacts on ZnO thin films
Appl. Phys. Lett. 88, 092102 (2006).

2005

22
M. Grundmann, H. von Wenckstern, R. Pickenhain, Th. Nobis, A. Rahm, M. Lorenz
Electrical Properties of ZnO Thin Films and Optical Properties of ZnO-based Nanostructures
Superlattices and Microstructures, Volume 38, Issues 4-6, October-December 2005, Pages 317-328.

21
Michael Lorenz, Holger Hochmuth, Jörg Lenzner, Matthias Brand,Holger von Wenckstern, Gabriele Benndorf, Marius Grundmann
ZnO thin films grown by pulsed laser deposition on 6H-SiC single crystals
Proceedings HET-SiC-05, Krippen, Germany, April 26 - May 01, 2005.

20
M. Grundmann, H. von Wenckstern
Electrical Properties of ZnO Thin Films
Proc. FVS-Workshop: TCOs für Dünnschichtsolarzellen und andere Anwendungen

19
Michael Lorenz, Holger Hochmuth, Daniel Spemann, Holger von Wenckstern, Heidemarie Schmidt, Marius Grundmann
ZnO-Dünnfilme gezüchtet mit Laserplasma-Abscheidung (PLD) - Forschungsstand und Anwendungen
Proc. FVS-Workshop: TCOs für Dünnschichtsolarzellen und andere Anwendungen

18
C. Bundesmann, M. Schubert, H. von Wenckstern, M. Lorenz, M. Grundmann
Optische Bestimmung der Eigenschaften freier Ladungsträger in ZnO-Dünnfilmen mittels spektroskopischer Infrarotellipsometrie
Proc. FVS-Workshop: TCOs für Dünnschichtsolarzellen und andere Anwendungen

17
H. von Wenckstern, Swen Weinhold, Gisela Biehne, Rainer Pickenhain, Heidemarie Schmidt, Holger Hochmuth, and Marius Grundmann
Donor levels in ZnO
Advances in Solid State Physics, Volume 45, Sep 2005, Pages 263 - 274

16
M. Lorenz, H. Hochmuth, J. Lenzner, T. Nobis, G. Zimmermann, M. Diaconu, H. Schmidt, H. von Wenckstern, M. Grundmann
Room-temperature luminescence of n-type ZnO thin films grown by pulsed-laser deposition in N₂, N₂O, and O₂background gas
Thin Solid Films 486, 205 (2005).

15
N. Ashkenov, M. Schubert, E. Twerdowski, B. N. Mbenkum, H. Hochmut, M. Lorenz, H. von Wenckstern,W. Grill, and M. Grundmann
Asymmetric ferroelectric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures
Thin Solid Films 486, 153 (2005).

14
Holger von Wenckstern, Rainer Pickenhain, Swen Weinhold, Michael Ziese, Pablo Esquinazi, Marius Grundmann
Electrical properties of Ni/GaAs and Au/GaAs Schottky contacts in high magnetic fields
AIP Conference proceedings 772, 1333 (2005).
(Proceedings of the 27th International Conference on the Physics of Semiconductors , Flagstaff, AZ, USA, 2004)

13
H. Schmidt, M. Diaconu, E. Guzman, H. Hochmuth, M. Lorenz , G. Benndorf, A. Setzer, P. Esquinazi, H. von Wenckstern,D. Spemann, A. Pöppl, R. Böttcher, M. Grundmann
N-conducting, ferromagnetic Mn-doped ZnO thin films on sapphire substrates
AIP Conference proceedings 772, 351 (2005).
(Proceedings of the 27th International Conference on the Physics of Semiconductors , Flagstaff, AZ, USA, 2004)

12
H. von Wenckstern, S. Weinhold, G. Biehne, R. Pickenhain, E. M. Kaidashev, M. Lorenz, and M. Grundmann
Static and transient capacitance spectroscopy on ZnO
AIP Conference proceedings 772, 197 (2005).
(Proceedings of the 27th International Conference on the Physics of Semiconductors , Flagstaff, AZ, USA, 2004)

11
H. von Wenckstern, S. Heitsch, G. Benndorf, D. Spemann, E. M. Kaidashev, M. Lorenz,and M. Grundmann
Incorporation and Electrical Activity of Group V Acceptors in ZnO Thin Films
AIP Conference proceedings 772, 183 (2005).
(Proceedings of the 27th International Conference on the Physics of Semiconductors , Flagstaff, AZ, USA, 2004)

10
M. Grundmann, H. von Wenckstern, R. Pickenhain, S. Weinhold, B. Chengnui, O. Breitenstein
Electrical properties of ZnO thin films and single crystals
Proc. of the NATO Advanced Research Workshop on ZnO as a material for micro-and optoelectronic applications, N.H. Nickel, E. Terukov, eds., Series: NATO Science Series II: Mathematics,Physics and Chemistry, Vol. 194 (Kluwer, 2005), ISBN 1-4020-3474-1

2004

9
M. Schubert, N. Ashkenov, T. Hofmann, M. Lorenz, H. Hochmuth, H. von Wenckstern, M. Grundmann, G. Wagner
Electro-optical properties of ZnO-BaTiO3-ZnO heterostructures grown by pulsed-laser deposition
Annalen der Physik 13, 61 (2004).

8
E. Guzman, H. Hochmuth, M. Lorenz, H. von Wenckstern, A. Rahm, E.M. Kaidashev, M. Ziese, A. Setzer,P. Esquinazi, A. Pöppl, D. Spemann, R. Pickenhain, H. Schmidt, M. Grundmann
Pulsed laser deposition of Fe- and Fe, Cu-doped ZnO thin films
Annalen der Physik 13, 57 (2004).

7
M. Schubert, C. Bundesmann, H. von Wenckstern, G. Jakopic, A. Haase, N.-K. Persson, F. Zhang, H. Arwin, O. Inganäs
Carrier redistribution in organic/inorganic (PEDOT/PSS - Si) heterojunction
Appl. Phys. Lett. 84, 1311-1313 (2004).

6
H. von Wenckstern, E. M. Kaidashev, M. Lorenz, H. Hochmuth, G. Biehne, J. Lenzner, V. Gottschalch, R. Pickenhain, M. Grundmann
Lateral homogeneity of Schottky contacts on n-type ZnO
Appl. Phys. Lett. 84, 79 (2004).

5
C. Bundesmann, N. Ashkenov, M. Schubert, A. Rahm, H. von Wenckstern, E. M. Kaidashev, M. Lorenz, M. Grundmann
Infrared dielectric functions and crystal orientation of a-planeZnO thin films on r-plane sapphire determined by generalized ellipsometry
Thin Solid Films 455-456, 161-166 (2004).

2003

4
E. M. Kaidashev, M. Lorenz, H. von Wenckstern, J. Lenzner, G. Benndorf,A. Rahm, H.-C. Semmelhack, K.-H. Han, H. Hochmuth, C. Bundesmann, V.Riede, M. Grundmann
High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition
Appl. Phys. Lett. 82, 3901 (2003).

3
M. Lorenz, E. M. Kaidashev, H. von Wenckstern, V. Riede, C. Bundesmann,D. Spemann, G. Benndorf, H. Hochmuth, A. Rahm, H.-C. Semmelhack, M.Grundmann
Optical and electrical properties of epitaxial (Mg, Cd)xZn1-xO,ZnO, and ZnO:(Ga, Al) thin films on c-plane sapphire grown by pulsed-laser deposition
Solid State Electronics 47, 2205 (2003).

2002

2
H. von Wenckstern, H. Schmidt, R. Pickenhain, M. Grundmann
Conduction band offset of pseudomorphic InAs/GaAs determined by capacitance spectroscopy
Proceedings of the 26th Int. Conf. on the Physics of Semiconductors,Edinburgh (ICPS-26), Institute of Physics Conference Series 171, H12(IoP Publishing, Bristol, 2002), ISBN 0-7503-0924-5

1
H. von Wenckstern, H. Schmidt, R. Pickenhain, and V. Gottschalch
Quantum Confined Stark Effect of Excitons Localized at Very Thin InAs Layers Embedded in GaAs
phys. stat. sol. (a) 190, No. 3, 709 (2002).

Department of Combinatorial Epitaxy Head: Holger von Wenckstern

Department of
Combinatorial Epitaxy

Head: Holger von Wenckstern