Publications Marius Grundmann


889
Marius Grundmann
The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 4th edition
(Springer Nature, Cham, 2021), ISBN 978-3-030-51568-3

888
M. Grundmann, M. Lorenz
Azimuthal anisotropy of rhombohedral (corundum-phase) heterostructures
Phys. Status Solidi B, accepted:1-5 (2021)

887
Jack E.N. Swallow, Robert G. Palgrave, Philip A.E. Murgatroyd, Anna Regoutz, Michael Lorenz, Anna Hassa, Marius Grundmann, Holger von Wenckstern, Joel B. Varley, Tim D. Veal
Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors
ACS Appl. Mater. Interfaces 13(2), 2807-2819 (2021)

886
Anna Reinhardt, Holger von Wenckstern, Marius Grundmann
All-amorphous Junction Field-Effect Transistors Based on High-Mobility Zinc Oxynitride
Adv. Electron. Mater. 7(4), 2000883:1-6 (2021)

885
A. Welk, A. Reinhardt, O. Herrfurth, T. Schultz, H. von Wenckstern, N. Koch, M. Grundmann
Tuning material properties of amorphous zinc oxynitride thin films by magnesium cationic substitution
APL Mater. 9(2), 021120:1-8 (2021)

884
P. Storm, S. Gierth, S. Selle, M. S. Bar, H. von Wenckstern, M. Grundmann, M. Lorenz
Evidence for oxygen being a dominant shallow acceptor in CuI
APL Mater., provisionally accepted:1-10 (2021)

883
Oliver Herrfurth, Evgeny Krüger, Steffen Blaurock, Harald Krautscheid, Marius Grundmann
Hot-phonon effects in photo-excited wide-bandgap semiconductors
J. Phys.: Condens. Matter, online (2021)

882
A. Hassa, M. Grundmann, H. von Wenckstern
Progression of Group-III Sesquioxides: Epitaxy, Solubility and Desorption
J. Phys. D: Appl. Phys. 54(22), 223001:1-15 (2021)

881
O. Herrfurth, S. Richter, M. Rebarz, S. Espinoza, J. Zúñiga-Pérez, C. Deparis, J. Leveillee, A. Schleife, M. Grundmann, J. Andreasson, R. Schmidt-Grund
Transient birefringence and dichroism in ZnO studied with fs-time-resolved spectroscopic ellipsometry
Phys. Rev. Res. 3(1), 013246:1-12 (2021)

880
Daniel Splith, Stefan Müller, Holger von Wenckstern, Marius Grundmann
Numerical modeling of Schottky barrier diode characteristics
Phys. Status Solidi A, accepted:1-8 (2021)

879
M. Kneiß, P. Storm, A. Hassa, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann
Epitaxial Growth of κ-(AlxGa1−x)2O3 Layers and Superlattice Heterostructures up to x=0.48 on Highly Conductive Al-doped ZnO Thin Film Templates by Pulsed Laser Deposition
Phys. Status Solidi B 258(2), 202000359:1-10 (2021)

878
Anna Hassa, Philipp Storm, Max Kneiß, Daniel Splith, Holger von Wenckstern, Michael Lorenz, Marius Grundmann
Correction to: Structural and elastic properties of α-(AlxGa1−x)2O3 thin films on (11.0) Al2O3 substrates for the entire composition range
Phys. Status Solidi B 258(2), 2000632 (1 page) (2021)

877
Anna Hassa, Philipp Storm, Max Kneiß, Daniel Splith, Holger von Wenckstern, Michael Lorenz, Marius Grundmann
Structural and elastic properties of α-(AlxGa1−x)2O3 thin films on (11.0) Al2O3 substrates for the entire composition range
Phys. Status Solidi B 258(2), 2000394:1-10 (2021)

876
Wenlei Yu, Gabriele Benndorf, Yunfeng Jiang, Kai Jiang, Chang Yang, Michael Lorenz, Marius Grundmann
Control of optical absorption and emission of sputtered copper iodide thin films
Phys. Status Solidi RRL 15(1), 2000431:1-5 (2021)

875
Robert Karsthof, Holger von Wenckstern, Marius Grundmann
Identification of LiNi and VNi acceptor levels in doped nickel oxide
APL Mater. 8(12), 121106:1-7 (2020) [Featured article]

874
Thorsten Schultz, Max Kneiß, Philipp Storm, Daniel Splith, Holger von Wenckstern, Marius Grundmann, Norbert Koch
Band offsets at κ-([Al,In]xGa1-x)2O3/MgO interfaces
ACS Appl. Mater. Interfaces 12(7), 8879-8885 (2020)

873
Oliver Lahr, Michael Bar, Holger von Wenckstern, Marius Grundmann
All-oxide transparent thin-film transistors based on amorphous zinc-tin-oxide fabricated at room temperature: Approaching the thermodynamic limit for sub-threshold swing
Adv. Electron. Mater. 6(10), 2000423:1-6 (2020)

872
Anna Reinhardt, Holger von Wenckstern, M. Grundmann
Metal-Semiconductor Field-Effect Transistors Based on the Amorphous Multi-Anion Compound ZnON
Adv. Electron. Mater. 6(4), 1901066:1-5 (2020)

871
Marius Grundmann
Comment on "Stress–strain state in α-Ga2O3 epitaxial films on α-Al2O3 substrates" [Appl. Phys. Express 13, 075502 (2020)]
Appl. Phys. Expr. 13(8), 089101 (1 page) (2020)

870
Melanie Budde, Daniel Splith, Piero Mazzolini, Abbes Tahraoui, Johannes Feldl, Manfred Ramsteiner, Holger von Wenckstern, Marius Grundmann, Oliver Bierwagen
SnO/β-Ga2O3 vertical pn heterojunction diodes
Appl. Phys. Lett. 117(25), 252106:1-6 (2020)

869
M. Grundmann, M. Lorenz
Epitaxial growth and strain relaxation of corundum-phase (Al,Ga)2O3 thin films from pulsed laser deposition at 1000°C on r-plane Al2O3
Appl. Phys. Lett. 117(24), 242102:1-4 (2020)

868
Marius Grundmann
Universal Relation for the Orientation of Dislocations from Prismatic Glide Systems in Hexagonal and Rhombohedral Strained Heterostructures
Appl. Phys. Lett. 116(8), 082104:1-3 (2020)

867
P. Storm, M. Bar, S. Selle, C. Yang, H. von Wenckstern, M. Grundmann, M. Lorenz
High mobility, highly transparent, smooth, p-type CuI thin films grown by pulsed laser deposition
APL Mater. 8(9), 091115:1-8 (2020) [SciLight]

866
Oliver Lahr, Holger von Wenckstern, Marius Grundmann
Ultrahigh-Performance Integrated Inverters Based on Amorphous Zinc-Tin-Oxide Deposited at Room Temperature
APL Mater. 8(9), 091111:1-8 (2020) [Editor's Pick]

865
P. Schlupp, S. Vogt, H. von Wenckstern, M. Grundmann
Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates
APL Mater. 8(6), 061112:1-7 (2020)

864
M. Kneiß, P. Storm, A. Hassa, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann
Growth, Structural and Optical Properties of Coherent κ-(AlxGa1-x)2O3/κ-Ga2O3 Quantum Well Superlattice Heterostructures
APL Mater. 8(5), 051112:1-14 (2020)

863
M. Grundmann, M. Lorenz
Anisotropic Strain Relaxation Through Prismatic and Basal Slip in α-(Al,Ga)2O3 on R-Plane Al2O3
APL Mater. 8(2), 021108:1-14 (2020)

862
A. Hassa, C. Sturm, M. Kneiß, D. Splith, H. von Wenckstern, T. Schultz, N. Koch, M. Lorenz, M. Grundmann
Solubility Limit and Material Properties of a κ-(AlxGa1−x)2O3 thin film with a lateral cation gradient on (00.1)Al2O3 by tin-assisted PLD
APL Mater. 8(2), 021103:1-7 (2020)

861
Robert Karsthof, Holger von Wenckstern, Marius Grundmann
Identification of LiNi and VNi acceptor levels in doped nickel oxide
arxiv: 2010.02694 (2020)

860
Melanie Budde, Daniel Splith, Piero Mazzolini, Abbes Tahraoui, Johannes Feldl, Manfred Ramsteiner, Holger von Wenckstern, Marius Grundmann, Oliver Bierwagen
SnO/β-Ga2O3 vertical pn heterojunction diodes
arxiv: 2010.00362 (2020)

859
C. Wouters, C. Sutton, L. M. Ghiringhelli, T. Markurt, R. Schewski, A. Hassa, H. von Wenckstern, M. Grundmann, M. Scheffler, M. Albrecht
Investigating the ranges of (meta)stable phase formation in (InxGa1-x)2O3: Impact of the cation coordination
arxiv: 2008.04573 (2020)

858
Robert Staacke, Roger John, Max Kneiß, Christian Osterkamp, Séverine Diziain, Fedor Jelezko, Marius Grundmann, Jan Meijer
Method of full polarization control of microwave fields in a scalable transparent structure for spin manipulation
J. Appl. Phys. 128(19), 194301:1-9 (2020)

857
V. Zviagin, C. Sturm, P. Esquinazi, M. Grundmann, R. Schmidt-Grund
Control of Magnetic Properties in Spinel ZnFe2O4 Thin Films Through Intrinsic Defect Manipulation
J. Appl. Phys. 128(16), 165702:1-7 (2020)

856
Chaker Fares, Minghan Xian, David J. Smith, Martha R. McCartney, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, S.J. Pearton
Changes in band alignment during annealing at 600°C of ALD Al2O3 on (InxGa1-x)2O3 for x=0.25-0.74
J. Appl. Phys. 127(10), 105701:1-8 (2020)

855
Haoming Wei, Chao Yang, Yangqing Wu, Bingqiang Cao, Michael Lorenz, Marius Grundmann
From energy harvesting to topologically insulating behavior: ABO3–type epitaxial thin films and superlattices
J. Mater. Chem. C 8(44), 15575-15596 (2020)

854
Michitaka Fukumoto, Chang Yang, Wenlei Yu, Christian Patzig, Thomas Höche, Thomas Ruf, Reinhard Denecke, Michael Lorenz, Marius Grundmann
Experimental evidence of wide bandgap in triclinic (001)-oriented Sn5O2(PO4)2 thin films on Y2O3 buffered glass substrates
J. Mater. Chem. C 8(40), 14203-14207 (2020)

853
Jon Borgersen, Lasse Vines, Ymir K. Frodason, Andrej Kuznetsov, Holger von Wenckstern, Marius Grundmann, Martin W. Allen, Jesús Zúñiga-Pérez, Klaus Johansen
Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials
J. Phys.: Condens. Matter 32(50), 415704 (2020)

852
Anna Hassa, Charlotte Wouters, Max Kneiß, Daniel Splith, Chris Sturm, Holger von Wenckstern, Martin Albrecht, Michael Lorenz, Marius Grundmann
Control of Phase Formation of (AlxGa1-x)2O3 Thin Films on c-plane Al2O3
J. Phys. D: Appl. Phys. 53(48), 485105:1-9 (2020)

851
Stefan Hohenberger, Johanna K. Jochum, Margriet J. Van Bael, Kristiaan Temst, Christian Patzig, Thomas Höche, Michael Lorenz, Marius Grundmann
Enhanced Magnetoelectric Coupling in BaTiO3-BiFeO3 Multilayers - An Interface Effect
Materials 13(1), 197:1-14 (2020)

850
Linus Krieg, Zhipeng Zhang, Daniel Splith, Holger von Wenckstern, Marius Grundmann, Xiaoxue Wang, Karen K. Gleason, Tobias Voss
Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition
Nano Express 1(1), 010013:1-7 (2020)

849
Linus Krieg, Florian Meierhofer, Sascha Gorny, Stefan Leis, Daniel Splith, Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann, Xiaoxue Wang, Jana Hartmann, Christoph Margenfeld, Irene Manglano Clavero, Adrian Avramescu, Tilman Schimpke, Dominik Scholz, Hans-Jürgen Lugauer, Martin Strassburg, Jörgen Jungclaus, Steffen Bornemann, Hendrik Spende, Andreas Waag, Karen K. Gleason, Tobias Voss
Towards 3D hybrid inorganic/organic optoelectronics: light emission and electronic transport properties of GaN/oCVD-PEDOT structures
Nature Commun. 11, 5092:1-10 (2020)

848
Marius Grundmann
Topological States of the Diatomic Linear Chain: Effect of Impedance Matching to the Fixed Ends
New J. Phys. 22(8), 083076:1-7 (2020)

847
Steffen Richter, Oliver Herrfurth, Shirly Espinoza, Mateusz Rebarz, Miroslav Kloz, Joshua A. Leveillee, André Schleife, Stefan Zollner, Marius Grundmann, Jakob Andreasson, Rüdiger Schmidt-Grund
Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry
New J. Phys. 22(8), 083066:1-14 (2020)

846
C. Sturm, S. Höfer, K. Hingerl, T.G. Mayerhöfer, M. Grundmann
Dielectric function decomposition by dipole orientation distribution: Application to triclinic K2Cr2O7
New J. Phys. 22(7), 073041:1-11 (2020)

845
C. Sturm, V. Zviagin, M. Grundmann
Dielectric tensor, optical activity and singular optic axes of KTP in the spectral range 0.5-8.4 eV
Phys. Rev. Mater. 4(5), 055203:1-7 (2020)

844
Robert Karsthof, Arthur Markus Anton, Friedrich Kremer, Marius Grundmann
Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium
Phys. Rev. Mater. 4(3), 034601:1-7 (2020)

843
C. Wouters, C. Sutton, L.M. Ghiringhelli, T. Markurt, R. Schewski, A. Hassa, H. von Wenckstern, M. Grundmann, M. Scheffler, M. Albrecht
Investigating the ranges of (meta)stable phase formation in (InxGa1-x)2O3: Importance of the cation coordination
Phys. Rev. Res. 4(12), 125001:1-10 (2020)

842
Lukas Trefflich, Frank Dissinger, Rüdiger Schmidt-Grund, Chris Sturm, Siegfried R. Waldvogel, Marius Grundmann
Influence of the excitation conditions on the emission behavior of carbon nanodot-based planar microcavities
Phys. Rev. Res. 2(4), 043216:1-6 (2020)

841
Marius Grundmann
Topological States due to Third-Neighbor Coupling in a Diatomic Linear Elastic Chains
Phys. Status Solidi B 257(9), 202000176:1-5 (2020)

840
Marius Grundmann
A Most General and Facile Recipe for the Calculation of Heteroepitaxial Strain
Phys. Status Solidi B 257(12), 2000323:1-5 (2020)

839
Ingrid Mertig, Marius Grundmann, Wolf Widdra
Functionality of Oxide Interfaces
Phys. Status Solidi B 257(7), 2000270 (1 page) (2020)

838
Robert Karsthof, Marius Grundmann, Holger von Wenckstern, Jesús Zúñiga-Pérez, Christiane Deparis
Nickel oxide-based heterostructures with large band offsets
Phys. Status Solidi B 257(7), 1900639:1-11 (2020)

837
Vitaly Zviagin, Marius Grundmann, Rüdiger Schmidt-Grund
Impact of Defects on Magnetic Properties of Spinel Zinc Ferrite Thin Films
Phys. Status Solidi B 257(7), 1900630:1-11 (2020)

836
R. Denecke, M. Welke, P. Huth, J. Gräfe, K. Brachwitz, M. Lorenz, M. Grundmann, M. Ziese, P. Esquinazi, E. Goering, G. Schütz, A. Chassé, K.-M. Schindler
Magnetic Anisotropy in Thin Layers of (Mn,Zn)Fe2O4 on SrTiO3(001)
Phys. Status Solidi B 257(7), 1900627:1-8 (2020)

835
H. von Wenckstern, M. Kneiß, P. Storm, M. Grundmann
A review of the segmented-target approach to combinatorial material synthesis by pulsed-laser deposition
Phys. Status Solidi B 257(7), 1900626:1-13 (2020)

834
Marius Grundmann
The Principal Axes Systems for the Elastic Properties of Monoclinic Gallia (β-Ga2O3)
Sci. Rep. 10, 19486:1-8 (2020)

833
Chang Yang, Eduard Rose, Wenlei Yu, Tillmann Stralka, Fangjuan Geng, Michael Lorenz, Marius Grundmann
Controllable growth of copper iodide by sputtering towards high-mobility thin films and self-assembled microcrystals
ACS Applied Electronic Materials 2(11), 3627-3632 (2020)

832
Marius Grundmann
Building material gradients laterally and vertically - combinatorial acceleration of material research and new device perspectives
BuildMoNa Annual Report 2018, p. 20-22 (2020)

831
Daniel Splith, Peter Schlupp, Holger von Wenckstern, Marius Grundmann
All-oxide pn-heterojunction diodes with β-Ga2O3
Gallium Oxide: Crystal Growth, Materials Properties, and Devices, p. 689-702 (2020), M. Higashiwaki, S. Fujita, eds. (Springer, Cham, 2020), ISBN 978-3-030-37152-4

830
Holger von Wenckstern, Daniel Splith, Marius Grundmann
Pulsed Laser Deposition of Ga2O3 and Related Alloys
Gallium Oxide: Crystal Growth, Materials Properties, and Devices, p. 273-291 (2020), M. Higashiwaki, S. Fujita, eds. (Springer, Cham, 2020), ISBN 978-3-030-37152-4

829
Krzysztof Dorywalski, Rüdiger Schmidt-Grund, Marius Grundmann
Hybrid GA-gradient method for thin films ellipsometric data evaluation
J. of Computational Science 47(11), 101201:1-7 (2020)

828
T. Jawinski, R. Scheer, H. von Wenckstern, M. Lorenz, M. Grundmann
Properties of epitaxially grown In2S3:V thin films for intermediate band solar cell application
Proc. 47th IEEE Photovoltaic Specialists Conference (PVSC), p. 2663-2666 (2020)

827
Marius Grundmann
Oxid-Halbleiter mit ultrabreiter Bandlücke: Darstellung mittels kombinatorischer gepulster Laserdeposition und Untersuchung physikalischer Eigenschaften
Vakuum in Forschung und Praxis 32(6), 32-37 (2020)

826
Jonas Michel, Daniel Splith, Julius Rombach, Alexandra Papadogianni, Theresa Berthold, Stefan Krischok, Marius Grundmann, Oliver Bierwagen, Holger von Wenckstern, Marcel Himmerlich
Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3
ACS Appl. Mater. Interfaces 11(30), 27073-27087 (2019)

825
O. Lahr, S. Vogt, H. von Wenckstern, M. Grundmann
Low-voltage operation of ring oscillators based on room-temperature-deposited amorphous zinc-tin-oxide channel MESFETs
Adv. Electron. Mater. 5(12), 1900548:1-5 (2019)

824
O. Herrfurth, T. Pflug, M. Olbrich, M. Grundmann, A. Horn, R. Schmidt-Grund
Femtosecond-time-resolved imaging of the dielectric function of ZnO in the visible to near-IR spectral range
Appl. Phys. Lett. 115(21), 212103:1-5 (2019) [Editor's Pick]

823
P. Storm, M. Kneiß, A. Hassa, T. Schultz, D. Splith, H. von Wenckstern, N. Koch, M. Lorenz, M. Grundmann
Epitaxial κ-(AlxGa1-x)2O3 Thin Films and Heterostructures grown by Tin-assisted VCCS-PLD
APL Mater. 7(11), 111110:1-8 (2019) [Editor's Pick]

822
M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, M. Lorenz, M. Grundmann
Epitaxial Stabilization of Single Phase κ-(InxGa1-x)2O3 Thin Films up to x=0.28 on c-sapphire and κ-Ga2O3 (001) Templates by Tin-assisted VCCS-PLD
APL Mater. 7(10), 101102:1-10 (2019) [Editor's Pick]

821
A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva, M. Grundmann
Erratum: “Structural, optical, and electrical properties of orthorhombic κ-(InxGa1-x)2O3 thin films” [APL Mater. 7, 022525 (2019)]
APL Mater. 7(7), 079901 (1 page) (2019)

820
Chaker Fares, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, Eric Lambers, S.J. Pearton
Valence Band Offsets for ALD SiO2 and Al2O3 on (InxGa1-x)2O3 for x=0.25-0.74
APL Mater. 7(7), 071115:1-7 (2019)

819
A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva, M. Grundmann
Structural, optical and electrical properties of orthorhombic κ-(InxGa1-x)2O3 thin films
APL Mater. 7(2), 022525:1-9 (2019)

818
M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, T. Schultz, N. Koch, M. Grundmann
Tin-Assisted Heteroepitaxial PLD-growth of κ-Ga2O3 Thin Films with High Crystalline Quality
APL Mater. 7(2), 022516:1-11 (2019)

817
Vitaly Zviagin, Chris Sturm, Pablo Esquinazi, Marius Grundmann, Rüdiger Schmidt-Grund
Control of Magnetic Order in Spinel ZnFe2O4 Thin Films Through Intrinsic Defect Manipulation
arxiv: 1909.13711 (2019)

816
Robert Karsthof, Marius Grundmann, Arthur Markus Anton, Friedrich Kremer
Polaronic inter-acceptor hopping transport in intrinsically doped nickel oxide
arxiv: 1905.03537 (2019)

815
Steffen Richter, Oliver Herrfurth, Shirly Espinoza, Mateusz Rebarz, Miroslav Kloz, Joshua A. Leveillee, André Schleife, Stefan Zollner, Marius Grundmann, Jakob Andreasson, Rüdiger Schmidt-Grund
Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry
arxiv: 1902.05832 (2019)

814
Slawomir Prucnal, Yonder Berencén, Mao Wang, Jörg Grenzer, Matthias Voelskow, Rene Hübner, Yuji Yamamoto, Alexander Scheit, Florian Bärwolf, Vitaly Zviagin, Rüdiger Schmidt-Grund, Marius Grundmann, Jerzy Żuk, Marcin Turek, Andrzej Droździel, Krzysztof Pyszniak, Robert Kudrawiec, Maciej P. Polak, Lars Rebohle, Wolfgang Skorupa, Manfred Helm, Shengqiang Zhou
Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
arxiv: 1901.01721 (2019)

813
A. Hassa, H. von Wenckstern, L. Vines, M. Grundmann
Influence of oxygen pressure on growth of Si-doped (AlxGa1-x)2O3 thin films on c-sapphire substrates by pulsed laser deposition
ECS J. Solid State Sci. Techn. 8(7), Q3217-Q3220 (2019)

812
Stefan Müller, Laurenz Thyen, Daniel Splith, Anna Reinhardt, Holger von Wenckstern, Marius Grundmann
High-quality Schottky Barrier Diodes on β-Gallium Oxide Thin Films on Glass Substrate
ECS J. Solid State Sci. Techn. 8(7), Q3126-Q3132 (2019)

811
Chaker Fares, Zahabul Islam, Aman Haque, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, S.J. Pearton
Effect of Annealing on the Band Alignment of ALD SiO2 on (AlxGa1-x)2O3 for x=0.2-0.65
ECS J. Solid State Sci. Techn. 8(12), P751-P756 (2019)

810
Chaker Fares, Max Kneiß, Holger von Wenckstern, Marko Tadjer, Fan Ren, Eric Lambers, Marius Grundmann, S.J. Pearton
Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x=0.2-0.65
ECS J. Solid State Sci. Techn. 8(6), P351-P356 (2019)

809
Marius Grundmann
Monolithic Waveguide-based Linear Photodetector Array for Use as Ultra-Compact Spectrometer
IEEE Transact. Electr. Dev. 66(1), 470-477 (2019)

808
Oliver Lahr, Zhipeng Zhang, Frank Grotjahn, Peter Schlupp, Sofie Vogt, Holger von Wenckstern, Andreas Thiede, Marius Grundmann
Full-swing, High-gain Inverters Based on ZnSnO JFETs and MESFETs
IEEE Transact. Electr. Dev. 66(8), 3376-3381 (2019)

807
Slawomir Prucnal, Yonder Berencén, Mao Wang, Lars Rebohle, Robert Kudrawiec, Maciej Polak, Vitaly Zviagin, Rüdiger Schmidt-Grund, Marius Grundmann, Joerg Grenzer, Marcin Turek, Andrzej Drozdziel, Krzysztof Pyszniak, Jerzy Zuk, Manfred Helm, Wolfgang Skorupa, Shengqiang Zhou
Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing
J. Appl. Phys. 125(20), 203105:1-7 (2019)

806
Volker Gottschalch, Stefan Merker, Steffen Blaurock, Max Kneiß, Ulrike Teschner, Marius Grundmann, Harald Krautscheid
Heteroepitaxial growth of α-, β-, γ- and κ-Ga2O3 phases by metalorganic vapor phase epitaxy
J. Cryst. Growth 510(15 March 2019), 76-84 (2019)

805
Zhijie Li, Hao Li, Zhonglin Wu, Mingkui Wang, Jingting Luo, Hamdi Torun, Pingan Hu, Chang Yang, Marius Grundmann, Xiaoteng Liu, Yong Qing Fu
Advances in designs and mechanisms of semiconducting metal oxide nanostructures for high-precision gas sensors operated at room-temperature
Mater. Horiz. 6(3), 470-506 (2019)

804
Leonard Brillson, Jonathan Cox, Hantian Gao, Geoffrey Foster, William Ruane, Alexander Jarjour, Martin Allen, David Look, Holger von Wenckstern, Marius Grundmann
Native Point Defect Measurement and Manipulation In ZnO Nanostructures
Materials 12(14), 2242:1-15 (2019)

803
Chris Sturm, Vitali Zviagin, Marius Grundmann
Applicability of the constitutive equations for the determination of the material properties of optically active materials
Opt. Lett. 44(6), 1351-1354 (2019) [Editor's Pick]

802
Robert Karsthof, Marius Grundmann, Markus Anton, Friedrich Kremer
Polaronic inter-acceptor hopping transport in intrinsically doped nickel oxide
Phys. Rev. B 99(23), 235201:1-13 (2019) [Editor's Suggestion]

801
Steffen Richter, Heinrich-Gregor Zirnstein, Jesús Zúñiga-Pérez, Christiane Deparis, Lukas Trefflich, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund
Voigt Exceptional Points in an Anisotropic ZnO-based Planar Microcavity: Square-Root Topology, Polarization Vortices, and Circularity
Phys. Rev. Lett. 123(22), 227401:1-7 (2019)

800
M. Grundmann
Modeling of a waveguide-based UV-VIS-IR spectrometer based on a lateral (In,Ga)N alloy gradient
Phys. Status Solidi A 216(14), 1900170:1-5 (2019)

799
P. Schlupp, H. von Wenckstern, M. Grundmann
Electrical properties of vertical p-NiO/n-Ga2O3 and p-ZnCo2O4/n-Ga2O3 pn-heterodiodes
Phys. Status Solidi A 216(7), 1800729:1-6 (2019)

798
Rüdiger Schmidt-Grund, Tom Michalsky, Marcel Wille, Marius Grundmann
Coherent polariton modes and lasing in ZnO nano- and microwires
Phys. Status Solidi B 256(4), 1800462:1-17 (2019)

797
C.E. Precker, J. Barzola-Quiquia, P.D. Esquinazi, M. Stiller, M.K. Chan, M. Jaime, Z. Zhang, M. Grundmann
Record-Breaking Magnetoresistance at the Edge of a Microflake of Natural Graphite
Adv. Engin. Mater. 21(12), 1900991:1-6 (2019)

796
Marius Grundmann
Copper iodide - very transparent with many holes and no holes at the same time
BuildMoNa Annual Report 2017, p. 26-30 (2019)

795
Robert Staacke, Roger John, Max Kneiß, Marius Grundmann, Jan Meijer
Highly transparent conductors for optical and microwave access to spin based quantum systems
NPJ Quantum Information 5, 98:1-5 (2019)

794
Report Halbleiterphysik/Semiconductor Physics 2018
Universität Leipzig, M. Grundmann, ed.

793
Max Kneiß, Philipp Storm, Gabriele Benndorf, Marius Grundmann, Holger von Wenckstern
Combinatorial material science and strain engineering enabled by pulsed laser deposition using radially segmented targets
ACS Comb. Sci. 20(11), 643-652 (2018)

792
Max Kneiß, Chang Yang, José Barzola-Quiquia, Gabriele Benndorf, Holger von Wenckstern, Pablo Esquinazi, Michael Lorenz, Marius Grundmann
Suppression of grain boundary scattering in p-type transparent γ-CuI thin films due to interface tunneling currents
Adv. Mater. Interf. 5(6), 1701411:1-12 (2018)

791
Alexander Jarjour, Jon W. Cox, William T. Ruane, Holger von Wenckstern, Marius Grundmann, Leonard J. Brillson
Single Metal Ohmic and Rectifying Contacts to ZnO Nanowires: A Defect Based Approach
Ann. Phys. 530(2), 1700335:1-6 (2018)

790
Michael Lorenz, Stefan Hohenberger, Eduard Rose, Marius Grundmann
Atomically stepped, pseudomorphic, corundum-phase (Al1-xGax)2O3 thin films (0 ≤ x < 0.08) grown on R-plane sapphire
Appl. Phys. Lett. 113(23), 231902:1-5 (2018) [Editor's Pick]

789
Evgeny Krüger, Vitaly Zviagin, Chang Yang, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann
Temperature dependence of the dielectric function of thin film CuI in the spectral range (0.6-8.3) eV
Appl. Phys. Lett. 113(17), 172102:1-5 (2018)

788
H. Modarresi, E. Menéndez, V.V. Lazenka, N. Pavlovic, M. Bisht, M. Lorenz, C. Petermann, M. Grundmann, A. Hardy, M.K. Van Bael, M.J. Van Bael, A. Vantomme, K. Temst
Morphology-induced spin frustration in granular BiFeO3 thin films: Origin of the magnetic vertical shift
Appl. Phys. Lett. 113(14), 142402:1-5 (2018)

787
Sophie Vogt, Holger von Wenckstern, Marius Grundmann
MESFETs and inverters based on amorphous zinc-tin-oxide thin films prepared at room temperature
Appl. Phys. Lett. 113(13), 133501:1-5 (2018)

786
Hantian Gao, Shreyas Muralidharan, Nicolas Pronin, Md Rezaul Karim, Susan M. White, Thaddeus Asel, Geoffrey Foster, Sriram Krishnamoorthy, Siddharth Rajan, Lei R. Cao, Masataka Higashiwaki, Holger von Wenckstern, Marius Grundmann, Hongping Zhao, David C. Look, Leonard J. Brillson
Optical signatures of deep level defects in Ga2O3
Appl. Phys. Lett. 112(24), 242102:1-5 (2018)

785
M. Grundmann
Elastic Theory of Pseudomorphic Monoclinic and Rhombohedral Heterostructures
J. Appl. Phys. 124(18), 185302:1-10 (2018) [invited]

784
V. Prozheeva, R. Hölldobler, H. von Wenckstern, M. Grundmann, F. Tuomisto
Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1-x)2O3 thin films
J. Appl. Phys. 123(12), 125705:1-6 (2018)

783
L.J. Brillson, G.M. Foster, J. Cox, W.T. Ruane, A.B. Jarjour, H. Gao, H. von Wenckstern, M. Grundmann, B. Wang, D.C. Look, A. Hyland, M.W. Allen
Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices
J. Electr. Mat. 47(9), 4980-4986 (2018)

782
Agathe Bouvet-Marchand, Alain Graillot, János Volk, Rolanas Dauksevicius, Chris Sturm, Elise Saoutieff, Antoine Viana, Björn Christian, Vadim Lebedev, János Radó, István E. Lukács, Marius Grundmann, David Grosso, Cedric Loubat
Design of UV-Crosslinked Polymeric Thin Layers for Encapsulation of Piezoelectric ZnO Nanowires for Pressure-Based Fingerprint Sensors
J. Mater. Chem. C 6(3), 605-613 (2018)

781
Christian Laube, Jessica Hellweg, Chris Sturm, Jan Griebel, Marius Grundmann, Axel Kahnt, Bernd Abel
Photo-Induced-Heating of Graphitised Nanodiamonds monitored by the Raman-Diamond-Peak
J. Phys. Chem. C 122, 25685-25691 (2018)

780
Tom Michalsky, Marcel Wille, Marius Grundmann, Rüdiger Schmidt-Grund
Tunable and switchable lasing in a ZnO microwire cavity at room temperature
J. Phys. D: Appl. Phys. 51(42), 425305:1-6 (2018)

779
Kerstin Brachwitz, Tammo Böntgen, Jörg Lenzner, Kartik Ghosh, Michael Lorenz, Marius Grundmann
Evolution of magnetization in epitaxial Zn1-xFexOz thin films (0 ≤ x ≤ 0.66) grown by pulsed laser deposition
J. Phys. D: Appl. Phys. 51(24), 245003:1-7 (2018)

778
S. Hohenberger, V. Lazenka, K. Temst, C. Patzig, S. Selle, T. Höche, M. Grundmann, M. Lorenz
Effect of double layer thickness on magnetoelectric coupling in multiferroic BaTiO3-Bi0.95Gd0.05FeO3 multilayers
J. Phys. D: Appl. Phys. 51(18), 184002:1-9 (2018)

777
Jonathan W. Cox, Geoffrey M. Foster, Alexander Jarjour, Holger von Wenckstern, Marius Grundmann, Leonard J. Brillson
Defect Manipulation to Control ZnO Micro-/Nanowire - Metal Contacts
Nano Lett. 18(11), 6974-6980 (2018)

776
T. Michalsky, M. Wille, M. Grundmann, R. Schmidt-Grund
Spatiotemporal evolution of coherent polariton modes in ZnO microwire cavities
Nano Lett. 18(11), 6820-6825 (2018)

775
J.K. Jochum, M. Lorenz, H.P. Gunnlaugsson, C. Patzig, T. Höche, M. Grundmann, A. Vantomme, K. Temst, M.J. Van Bael, V. Lazenka
Impact of magnetization and hyperfine field distribution on high magnetoelectric coupling strength in BaTiO3-BiFeO3 multilayers
Nanoscale 10(12), 5574-5580 (2018)

774
Thorsten Schulz, Sofie Bitter, Peter Schlupp, Holger von Wenckstern, Nobert Koch, Marius Grundmann
The influence of oxygen deficiency on the rectifying behavior of transparent semiconducting oxide-metal interfaces
Phys. Rev. Appl. 9, 064001:1-8 (2018) [Editor's Suggestion]

773
S. Prucnal, Y. Berencén, M. Wang, J. Grenzer, M. Voelskow, R. Hübner, Y. Yamamoto, A. Scheit, F. Bärwolf, V. Zviagin, R. Schmidt-Grund, M. Grundmann, J. Żuk, M. Turek, A. Droździel, K. Pyszniak, R. Kudrawiec, M.P. Polak, L. Rebohle, W. Skorupa, M. Helm, S. Zhou
Strain and band gap engineering in GeSn alloys via P doping
Phys. Rev. Appl. 10(6), 064055:1-11 (2018)

772
M. Grundmann
Monolithic Forward-looking Photodetector for Use as Ultra-Compact Wavemeter with Wide Spectral Range
Phys. Status Solidi A 215(24), 1800651:1-5 (2018)

771
Tanja Jawinski, Leonard A. Wägele, Roland Scheer, Marius Grundmann, Holger von Wenckstern
Properties of In2S3-based pin-heterojunctions
Phys. Status Solidi A 215(11), 1700827:1-6 (2018)

770
Rainer Pickenhain, Matthias Schmidt, Holger von Wenckstern, Gabriele Benndorf, Andreas Pöppl, Rolf Böttcher, Marius Grundmann
Negative U Properties of the Deep Level E3 in ZnO
Phys. Status Solidi B 255(7), 1700670:1-16 (2018)

769
Daniel Splith, Stefan Müller, Holger von Wenckstern, Marius Grundmann
Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films
Proc. SPIE 10533, 105330C:1-8 (2018), David J. Rogers, David C. Look, Ferechteh H. Teherani, eds.

768
Tilo Meister, Frank Ellinger, Johann W. Bartha, Manfred Berroth, Joachim Burghartz, Martin Claus, Lothar Frey, Alessio Gagliardi, Marius Grundmann, Jan Hesselbarth, Hagen Klauk, Karl Leo, Paolo Lugli, Stefan Mannsfeld, Yiannos Manoli, Renato Negra, Daniel Neumaier, Ullrich Pfeiffer, Thomas Riedl, Susanne Scheinert, Ullrich Scherf, Andreas Thiede, Gerhard Troester, Martin Vossiek, Robert Weigel, Christian Wenger, Golzar Alavi, Markus Becherer, Carlos Alvarado Chavarin, Mohammed Darwish, Martin Ellinger, Chun-Yu Fan, Martin Fritsch, Frank Grotjahn, Marco Gunia, Katherina Haase, Philipp Hillger, Koichi Ishida, Michael Jank, Stefan Knobelspies, Matthias Kuhl, Grzegorz Lupina, Shabnam Mohammadi Naghadeh, Niko Münzenrieder, Sefa Özbek, Mahsa Rasteh, Giovanni A. Salvatore, Daniel Schrüfer, Carsten Strobel, Manuel Theisen, Christian Tückmantel, Holger von Wenckstern, Zhenxing Wang, Zhipeng Zhang
Program FFlexCom
2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), p. 1-4 (2018)

767
Steffen Richter, Jesús Zúñiga-Pérez, Christiane Deparis, Lukas Trefflich, Heinrich-Gregor Zirnstein, Tom Michalsky, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund
Exceptional Points in the Dispersion of Optically Anisotropic Planar Microcavities
IEEE Photonics Society Summer Topical Meeting Series, p. 195-196 (2018), ISBN 978-1-5386-4076-0

766
Tom Michalsky, Marcel Wille, Evgeny Krüger, Chris Sturm, Marius Grundmann, Rüdiger Schmidt-Grund
Coherent polariton states and lasing in ZnO nano- and microstructures
IEEE Photonics Society Summer Topical Meeting Series, p. 171-172 (2018), ISBN 978-1-5386-4076-0

765
Report Halbleiterphysik/Semiconductor Physics 2017
Universität Leipzig, M. Grundmann, ed.

764
Report of The Physics Institutes of Universität Leipzig 2017
Universität Leipzig, M. Grundmann, ed.

763
S. Bitter, P. Schlupp, H. von Wenckstern, M. Grundmann
The Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc-Tin-Oxide with Various Cation Composition
ACS Appl. Mater. Interfaces 9(31), 26574-26581 (2017)

762
Michael Lorenz, Dietmar Hirsch, Christian Patzig, Thomas Höche, Stefan Hohenberger, Holger Hochmuth, Vera Lazenka, Kristiaan Temst, Marius Grundmann
Correlation of interface impurities and chemical gradients with magnetoelectric coupling strength in multiferroic BiFeO3-BaTiO3 superlattices
ACS Appl. Mater. Interfaces 9(22), 18956-18965 (2017)

761
C. Sturm, R. Schmidt-Grund, V. Zviagin, M. Grundmann
Temperature dependence of the dielectric tensor of monoclinic dielectric Ga2O3 single crystals in the spectral range 0.5-8.5 eV
Appl. Phys. Lett. 111(8), 082102:1-4 (2017)

760
Marcel Wille, Evgeny Krüger, Steffen Blaurock, Vitaly Zviagin, Rafael Deichsel, Gabriele Benndorf, Lukas Trefflich, Volker Gottschalch, Harald Krautscheid, Rüdiger Schmidt-Grund, Marius Grundmann
Lasing in cuprous iodide microwires
Appl. Phys. Lett. 111(3), 031105:1-5 (2017)

759
Michael Lorenz, Jose Barzola-Quiquia, Chang Yang, Christian Patzig, Thomas Höche, Pablo Esquinazi, Marius Grundmann, Haoming Wei
Charge transfer-induced magnetic exchange bias and electron localization in (111)- and (001)-oriented LaNiO3/LaMnO3 superlattices
Appl. Phys. Lett. 110(10), 102403:1-5 (2017)

758
Vera Lazenka, Michael Lorenz, Hiwa Modarresi, Johanna K. Jochum, Haraldur P. Gunnlaugsson, Marius Grundmann, Margriet J. Van Bael, Kristiaan Temst, André Vantomme
Interface induced out-of-plane magnetic anisotropy in magnetoelectric BiFeO3-BaTiO3 superlattices
Appl. Phys. Lett. 110(9), 092902:1-5 (2017)

757
C. Sturm, M. Wille, J. Lenzner, S. Khujanov, M. Grundmann
Non-linear optical deformation potentials in uniaxially strained ZnO microwires
Appl. Phys. Lett. 110(6), 062103:1-4 (2017)

756
Yogesh Kumar, Israel Lorite, Michael Lorenz, Pablo D. Esquinazi, Marius Grundmann
Effect of annealing on the magnetic properties of zinc ferrite thin films
arxiv: 1702.06033 (2017)

755
Krzysztof Dorywalski, Nathalie Lemée, Bohdan Andriyevsky, Rüdiger Schmidt-Grund, Marius Grundmann, Michał Piasecki, Marie Bousquet, Tomasz Krzyżyński
Optical properties of epitaxial Na0.5Bi0.5TiO3 lead-free piezoelectric thin films: Ellipsometric and theoretical studies
Appl. Surf. Sci. 421, 367-372 (2017)

754
Martin Welke, Kerstin Brachwitz, Michael Lorenz, Marius Grundmann, Karl-Michael Schindler, Angelika Chasse, Reinhard Denecke
Structure and cation distribution in (Mn0.5Zn0.5)Fe2O4 thin films on SrTiO3(001)
J. Appl. Phys. 121(22), 225305:1-7 (2017)

753
Volker Gottschalch, Steffen Blaurock, Gabriele Benndorf, Jörg Lenzner, Marius Grundmann, Harald Krautscheid
Copper Iodide synthesized by iodization of Cu-films and deposited using MOCVD
J. Cryst. Growth 471, 21-28 (2017)

752
Michael Lorenz, Haoming Wei, Florian Jung, Stefan Hohenberger, Holger Hochmuth, Marius Grundmann
Two-dimensional Frank - van der Merwe growth of functional oxide and nitride thin film superlattices by pulsed laser deposition
J. Mat. Res. 32(21), 3936-3946 (2017)

751
Haoming Wei, Chang Yang, Jose Luis Barzola-Quiquia, Martin Welke, Reinhard Denecke, Christian Patzig, Thomas Höche, Pablo Esquinazi, Marius Grundmann, Michael Lorenz
Ferromagnetic phase transition and single-gap type electrical conductivity of epitaxial LaMnO3/LaAlO3 superlattices
J. Phys. D: Appl. Phys. 50(43), 43LT02:1-6 (2017)

750
L. Vines, C. Bhoodoo, H. von Wenckstern, M. Grundmann
Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level
J. Phys. D: Appl. Phys. 30(2), 025502:1-6 (2017)

749
C. Yang, D. Souchay, M. Kneiß, M. Bogner, H. M. Wei, M. Lorenz, O. Oeckler, G. Benstetter, Y.Q. Fu, M. Grundmann
Transparent Flexible Thermoelectric Material Based on Non-toxic Earth-Abundant p-Type Copper Iodide Thin Film
Nature Commun. 8, 16076:1-7 (2017)

748
Maximilian Zapf, Robert Röder, Karl Winkler, Lisa Kaden, Johannes Greil, Marcel Wille, Marius Grundmann, Rüdiger Schmidt-Grund, Alois Lugstein, Carsten Ronning
Dynamical Tuning of Nanowire Lasing Spectra
Nano Lett. 17(11), 6637-6643 (2017)

747
Alexander Shkurmanov, Chris Sturm, Helena Franke, Jörg Lenzner, Marius Grundmann
Low temperature PLD-growth of ultrathin ZnO nanowires by using ZnxAl1-xO and ZnxGa1-xO seed layers
Nanoscale Res. Lett. 12, 134:1-7 (2017)

746
A. de Pablos Martín, M. Lorenz, M. Grundmann, Th. Höche
Laser Welding of Fused Silica Glass with Sapphire Using a Non- Stoichiometric, Fresnoitic Ba2TiSi2O8
Optics & Laser Technol. 92, 85-94 (2017)

745
Steffen Richter, Tom Michalsky, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund
Erratum: Exceptional points in anisotropic planar microcavities
Phys. Rev. A 96(5), 059902E:1-2 (2017)

744
Steffen Richter, Tom Michalsky, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund
Exceptional points in anisotropic planar microcavities
Phys. Rev. A 95, 023836:1-9 (2017)

743
P. Schlupp, H. von Wenckstern, M. Grundmann
Schottky barrier diodes based on room temperature fabricated amorphous zinc tin oxide thin film
Phys. Status Solidi A 214(10), 1700210:1-8 (2017)

742
M. Grundmann
Strain in Pseudomorphic Monoclinic Ga2O3-based Heterostructures
Phys. Status Solidi B 254(9), 1700134:1-7 (2017)

741
Marius Grundmann, Chris Sturm, Christian Kranert, Steffen Richter, Rüdiger Schmidt-Grund, Christianne Deparis, Jesús Zúñiga-Pérez
Optically Anisotropic Media: New Approaches to the Dielectric Function, Singular Axes, Raman Scattering Intensities and Microcavity Modes
Phys. Status Solidi RRL 11(1), 1600295:1-19 (2017)

740
Marius Grundmann, Steffen Richter, Tom Michalsky, Chris Sturm, Jesús Zúñiga-Pérez, Rüdiger Schmidt-Grund
Exceptional points in anisotropic photonic structures: From non-Hermitian physics to possible device applications
Proc. SPIE 10105, 101050K:1-8 (2017), Ferechteh H. Teherani, David C. Look, David J. Rogers, eds.

739
Stefan Müller, Holger von Wenckstern, Florian Schmidt, Daniel Splith, Heiko Frenzel, Marius Grundmann
Method of choice for fabrication of high-quality β-gallium oxide-based Schottky diodes
Semic. Sci. Technol. 32(6), 065013:1-8 (2017)

738
T. Lühmann, R. Wunderlich, R. Schmidt-Grund, J. Barzola-Quiquia, P. Esquinazi, M. Grundmann, J. Meijer
Investigation of the graphitization process of ion-beam irradiated diamond using ellipsometry, Raman spectroscopy and electrical transport measurements
Carbon 121, 512-517 (2017)

737
Yogesh Kumar, Israel Lorite, Michael Lorenz, Pablo Esquinazi, Marius Grundmann
Effect of annealing on the magnetic properties of zinc ferrite thin films
Mater. Lett. 195, 89-91 (2017)

736
H.-E. Zschau, M. Schütze, M.C. Galetz, B.M. Gleeson, S. Neve, M. Lorenz, M. Grundmann
Surface Chemistry Evolution of F-doped Ni-base Superalloy upon Heat Treatment
Materials and Corrosion 68(2), 220-227 (2017)

735
Report Halbleiterphysik/Semiconductor Physics 2016
Universität Leipzig, M. Grundmann, ed.

734
Report of The Physics Institutes of Universität Leipzig 2016
Universität Leipzig, M. Grundmann, ed.

733
M. Grundmann
Felix Bloch (1905-1983) in Leipzig (in English)
WWW homepage of Felix Bloch Institute for Solid State Physics of Universität Leipzig:1-4

732
M. Grundmann
Felix Bloch (1905-1983) in Leipzig (in German)
WWW-Seite des Felix-Bloch-Institut für Festkörperphysik der Universität Leipzig:1-4

731
Marius Grundmann
The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 3rd edition
(Springer, Heidelberg, 2016), ISBN 978-3-319-23879-1

730
Nikolay Petkov, János Volk, Róbert Erdélyi, István Endre Lukács, Takahiro Nagata, Chris Sturm, Marius Grundmann
Contacting ZnO individual crystal facets by direct write lithography
ACS Appl. Mater. Interfaces 8(36), 23891-23898 (2016)

729
Sofie Bitter, Peter Schlupp, Michael Bonholzer, Holger von Wenckstern, Marius Grundmann
Influence of the cation ratio on optical and electrical properties of zinc-tin-oxide thin films from pulsed-laser deposition
ACS Comb. Sci. 18(4), 188-194 (2016)

728
F.J. Klüpfel, H. von Wenckstern, M. Grundmann
Ring Oscillators based on ZnO Channel JFETs and MESFETs
Adv. Electron. Mater. 2(7), 1500431:1-5 (2016)

727
Michael Lorenz, Vera Lazenka, Peter Schwinkendorf, Margriet J. Van Bael, André Vantomme, Kristiaan Temst, Marius Grundmann, Thomas Höche
Epitaxial coherence at interfaces as origin of high magnetoelectric coupling in multiferroic BaTiO3 - BiFeO3 superlattices
Adv. Mater. Interf. 3(11), 1500822:1-7 (2016)

726
M. Stiller, J. Barzola-Quiquia, P. Esquinazi, D. Spemann, J. Meijer, M. Lorenz, M. Grundmann
Strong out-of-plane magnetic anisotropy in ion irradiated anatase TiO2 thin films
AIP Adv. 6(12), 125009:1-13 (2016)

725
Alexander Shkurmanov, Chris Sturm, Jörg Lenzner, Guy Feuillet, Florian Tendille, Philippe De Mierry, Marius Grundmann
Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates
AIP Adv. 6(9), 095013:1-5 (2016)

724
Haoming Wei, Marius Grundmann, Michael Lorenz
Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO3/ LaAlO3 (111) superlattices
Appl. Phys. Lett. 109(8), 082108:1-5 (2016)

723
M. Wille, T. Michalsky, E. Krüger, M. Grundmann, R. Schmidt-Grund
Absorptive lasing mode suppression in ZnO nano- and microcavities
Appl. Phys. Lett. 109(6), 061102:1-4 (2016)

722
I. Lorite, Y. Kumar, P. Esquinazi, S. Friedländer, A. Pöppl, T. Michalsky, J. Meijer, M. Grundmann, T. Mayer
Photo-enhanced magnetization in Fe-doped ZnO nanowires
Appl. Phys. Lett. 109(1), 012401:1-4 (2016)

721
Jesús Zúñiga-Pérez, Lars Kappei, Christiane Deparis, François Reveret, Marius Grundmann, Esther de Prado, Omar Jamadi, Joel Leymarie, Sébastien Chenot, Mathieu Leroux
Homoepitaxial nonpolar (10-10) ZnO/ZnMgO heterostructures: from single layers to monolithic Bragg reflectors and optical microcavities
Appl. Phys. Lett. 108(25), 251904:1-5 (2016)

720
Zhipeng Zhang, Holger von Wenckstern, Jörg Lenzner, Marius Grundmann
Wavelength-selective ultraviolet (Mg,Zn)O photodiodes: Tuning of parallel composition gradients with oxygen pressure
Appl. Phys. Lett. 108(24), 243503:1-5 (2016)

719
V. Zviagin, Y. Kumar, I. Lorite, P. Esquinazi, M. Grundmann, R. Schmidt-Grund
Ellipsometric Investigation of ZnFe2O4 Thin Films in Relation to Magnetic Properties
Appl. Phys. Lett. 108(13), 131901:1-4 (2016)

718
Zhipeng Zhang, Holger von Wenckstern, Jörg Lenzner, Michael Lorenz, Marius Grundmann
Visible-blind and solar-blind ultraviolet photodiodes based on (InxGa1-x)2O3
Appl. Phys. Lett. 108(12), 123503:1-5 (2016)

717
Rami Khazaka, Marius Grundmann, Marc Portail, Philippe Vennéguès, Marcin Zielinski, Thierry Chassagne, Daniel Alquier, Jean-François Michaud
Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C SiC(001)
Appl. Phys. Lett. 108(1), 011608:1-4 (2016)

716
Steffen Richter, Tom Michalsky, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund
Exceptional points in anisotropic planar microcavities
arxiv: 1609.07653 (2016)

715
Christian Kranert, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann
Raman tensor elements of β-Ga2O3
arxiv: 1606.07409 (2016)

714
I. Lorite, Y. Kumar, P. Esquinazi, S. Friedländer, A. Pöppl, T. Michalsky, J. Meijer, M. Grundmann, T. Meyer, I. Estrela-Lopis
Photo-enhanced magnetization in Fe-doped ZnO nanowires
arxiv: 1606.06955 (2016)

713
Marcus Jenderka, Steffen Richter, Michael Lorenz, Marius Grundmann
Fundamental absorption edges in heteroepitaxial Y1Bi1O3 thin films
arxiv: 1606.03945 (2016)

712
Tom Michalsky, Helena Franke, Robert Buschlinger, Ulf Peschel, Marius Grundmann, Rüdiger Schmidt-Grund
Coexistence of strong and weak coupling in ZnO nanowire cavities
arxiv: 1602.06804 (2016)

711
Chris Sturm, Rüdiger Schmidt-Grund, Christian Kranert, Jürgen Furthmüller, Friedhelm Bechstedt, Marius Grundmann
Dipole Analysis of the Dielectric Function of Colour Dispersive Materials: Application to Monoclinic Ga2O3
arxiv: 1601.07892 (2016)

710
M. Wille, C. Sturm, T. Michalsky, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann
Carrier density driven material dynamics of lasing ZnO Nanowires
arxiv: 1601.03866 (2016)

709
Marius Grundmann, Chris Sturm
The Singular Optical Axes in Biaxial Crystals and Analysis of Their Spectral Dispersion Effects in β-Ga2O3
arxiv: 1601.03760:1-7 (2016)

708
Tom Michalsky, Helena Franke, Robert Buschlinger, Ulf Peschel, Marius Grundmann, Rüdiger Schmidt-Grund
Coexistence of strong and weak coupling in ZnO nanowire cavities
Eur. Phys. J. Appl. Phys. 74(3), 30502:1-10 (2016)

707
Abdurashid Mavlonov, Steffen Richter, Holger von Wenckstern, Rüdiger Schmidt-Grund, Michael Lorenz, Marius Grundmann
Temperature dependent self-compensation in Al and Ga-doped Mg0.05Zn0.95O thin films grown by pulsed laser deposition
J. Appl. Phys. 120(20), 205703:1-6 (2016)

706
M. Jenderka, S. Richter, M. Lorenz, M. Grundmann
Fundamental absorption edges in heteroepitaxial YBiO3 thin films
J. Appl. Phys. 120(12), 125702:1-4 (2016)

705
Kazuki Narushima, Yoshito Ashizawa, Kerstin Brachwitz, Holger Hochmuth, Michael Lorenz, Marius Grundmann, Katsuji Nakagawa
Magnetic activity of surface plasmon resonance using dielectric magnetic materials fabricated on quartz glass substrate
Jpn. J. Appl. Phys. 55(7S3), 07MC05:1-4 (2016)

704
M. Lorenz, M.S. Ramachandra Rao, T. Venkatesan, E. Fortunato, P. Barquinha, R. Branquinho, D. Salgueiro, R. Martins, E. Carlos, A. Liu, F.K. Shan, M. Grundmann, H. Boschker, J. Mukherjee, M. Priyadarshini, N. DasGupta, D.J. Rogers, F.H. Teherani, E.V. Sandana, P. Bove, K. Rietwyk, A. Zaban, A. Veziridis, A. Weidenkaff, M. Muralidhar, M. Murakami, S. Abel, J. Fompeyrine, J. Zúñiga-Pérez, R. Ramesh, N.A. Spaldin, S. Ostanin, V. Borisov, I. Mertig, V. Lazenka, G. Srinivasan, W. Prellier, M. Uchida, M. Kawasaki, R. Pentcheva, P. Gegenwart, F. Miletto Granozio, J. Fontcuberta, N. Pryds
The 2016 oxide electronic materials and oxide interfaces roadmap (ch. 3, M. Grundmann: Bipolar oxide devices)
J. Phys. D: Appl. Phys. 49(43), 433001:1-53 (2016)

703
H. Modarresi, V. Lazenka, E. Menéndez, M. Lorenz, M. Bisht, A. Volodin, C. Van Haesendonck, M. Grundmann, M. J. Van Bael, K. Temst, A. Vantomme
Induced ferromagnetism and magnetoelectric coupling in ion-beam synthesized BiFeO3-CoFe2O4 nanocomposite thin films
J. Phys. D: Appl. Phys. 49(32), 325302:1-6 (2016)

702
Marius Grundmann, Fabian Klüpfel, Robert Karsthof, Peter Schlupp, Friedrich-Leonhard Schein, Daniel Splith, Chang Yang, Sofie Bitter, Holger von Wenckstern
Oxide Bipolar Electronics: Materials, Devices and Circuits
J. Phys. D: Appl. Phys. 49(21), 213001:1-25 (2016) [Topical Review]

701
R. Karsthof, H. von Wenckstern, M. Grundmann
Semi-transparent ZnO-based UV-active solar cells: Analysis of electrical loss mechanisms
J. Vac. Sci. Technol. B 34(4), 04J107:1-8 (2016)

700
Michael Lorenz, Gerald Wagner, Vera Lazenka, Peter Schwinkendorf, Michael Bonholzer, Margriet J. Van Beal, André Vantomme, Kristiaan Temst, Oliver Oeckler, Marius Grundmann
Correlation of high magnetoelectric coupling with oxygen vacancy superstructure in epitaxial multiferroic BaTiO3-BiFeO3 composite thin films
Materials 9, 44:1-13 (2016)

699
Araceli de Pablos-Martín, Sebastian Tismer, Falk Naumann, Michael Krause, Michael Lorenz, Marius Grundmann, Thomas Höche
Evaluation of the Bond Quality of Laser-Joined Sapphire Wafers using a Fresnoite-Glass Sealant
Microsyst. Technol. 22(1), 207-214 (2016)

698
Leonard Brillson, William T. Ruane, Hantian Gao, Yuanyao Zhang, Jian Luo, Holger von Wenckstern, Marius Grundmann
Spatially-Resolved Cathodoluminescence Spectroscopy of ZnO Defects
Mat. Sci. Semic. Process. 57, 197-209 (2016)

697
W.T. Ruane, K.M. Johansen, K. Leedy, D.C. Look, H. von Wenckstern, M. Grundmann, L.J. Brillson
Defect Segregation and Optical Emission in ZnO Nano- and Microwires
Nanoscale 8, 7631-7637 (2016)

696
M. Wille, C. Sturm, T. Michalsky, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann
Carrier density driven material dynamics of lasing ZnO Nanowires
Nanotechnology 27(22), 225702:1-7 (2016)

695
A. de Pablos-Martin, S. Tismer, G. Benndorf, M. Mittag, M. Lorenz, M. Grundmann, Th. Höche
Laser soldering of sapphire substrates using a BaTiAl6O12 thin-film glass sealant
Optics & Laser Technol. 81, 153-161 (2016)

694
A. de Pablos-Martin, G. Benndorf, Sebastian Tismer, M. Mittag, A. Cismak, M. Lorenz, M. Grundmann, Th. Höche
Laser-Welded Fused Silica Substrates Using a Luminescent Fresnoite-Based Sealant
Optics & Laser Technol. 80, 176-185 (2016)

693
Chang Yang, Max Kneiß, Michael Lorenz, Marius Grundmann
Room-temperature Synthesized Copper Iodide Thin Film as Degenerate p-Type Transparent Conducting Material with a Boosted Figure of Merit
PNAS 113(46), 12929-12933 (2016)

692
Chris Sturm, Marius Grundmann
The Singular Optical Axes in Biaxial Crystals and Analysis of Their Spectral Dispersion Effects in β-Ga2O3
Phys. Rev. A 93(5), 053839:1-8 (2016)

691
C. Sturm, R. Schmidt-Grund, C. Kranert, J. Furthmüller, F. Bechstedt, M. Grundmann
Dipole analysis of the dielectric function of color dispersive materials: Application to monoclinic Ga2O3
Phys. Rev. B 94(3), 035148:1-11 (2016)

690
Martin Thunert, Alexander Janot, Helena Franke, Chris Sturm, Tom Michalsky, María Dolores Martín, Luis Viña, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund
Cavity Polariton Condensate in a Disordered Environment
Phys. Rev. B 93(6), 064203:1-12 (2016)

689
Christian Kranert, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann
Raman Tensor Formalism for Optically Anisotropic Crystals
Phys. Rev. Lett. 116(12), 127401:1-5 (2016)

688
Robert Karsthof, Paul Räcke, Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann
Semi-transparent n-ZnO/p-NiO UV solar cells
Phys. Status Solidi A 213(1), 30-37 (2016)

687
Anna Reinhardt, Heiko Frenzel, Holger von Wenckstern, Daniel Spemann, Marius Grundmann
Electron transport mechanism in rf-sputtered amorphous zinc oxynitride thin films
Phys. Status Solidi A 213(7), 1767-1773 (2016)

686
V. Zviagin, P. Richter, T. Böntgen, M. Lorenz, M. Ziese, D.R.T. Zahn, G. Salvan, M. Grundmann, R. Schmidt-Grund
Comparative Study of Optical and Magneto-Optical Properties of Normal, Disordered and Inverse Spinel Type Oxides
Phys. Status Solidi B 253(3), 429-436 (2016)

685
Marius Grundmann, Jesús Zúñiga-Pérez
Pseudomorphic ZnO-based heterostructures: from polar through all semipolar to nonpolar orientations
Phys. Status Solidi B 253(2), 351-360 (2016)

684
Christian Kranert, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann
Raman tensor elements of β-Ga2O3
Sci. Rep. 6, 35964:1-9 (2016)

683
Chang Yang, Max Kneiß, Friedrich-Leonhard Schein, Michael Lorenz, Marius Grundmann
Room-temperature domain-epitaxy of copper iodide thin films for transparent CuI/ZnO heterojunctions with high rectification ratios larger than 109
Sci. Rep. 6, 21937:1-8 (2016)

682
Marius Grundmann
Don't mourn the losses
BuildMoNa Annual Report 2016, p. 26-29 (2016)

681
Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern
TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE
JP 5897621 B2 (Japan Patent Office, 2016)

680
Alexander Shkurmanov, Chris Sturm, Holger Hochmuth, Marius Grundmann
Growth kinetics of ultrathin ZnO Nanowires grown by Pulsed Laser Deposition
Proc. Eng. 168, 1156-1159 (2016)

679
Report Halbleiterphysik/Semiconductor Physics 2015
Universität Leipzig, M. Grundmann, ed.

678
Report of The Physics Institutes of Universität Leipzig 2015
Universität Leipzig, M. Grundmann, ed.

677
Holger von Wenckstern, Daniel Splith, Anna Werner, Stefan Müller, Michael Lorenz, Marius Grundmann
Properties of Schottky barrier diodes on (InxGa1-x)2O3 for 0.01 ≤ x ≤ 0.85 determined by using a combinatorial approach
ACS Comb. Sci. 17(12), 710-715 (2015)

676
H. von Wenckstern, D. Splith, S. Lanzinger, F. Schmidt, S. Müller, P. Schlupp, R. Karsthof, M. Grundmann
pn-heterodiodes with n-type In2O3
Adv. Electron. Mater. 1(4), 1400026:1-6 (2015)

675
P. Schlupp, F.-L. Schein, H. von Wenckstern, M. Grundmann
All Amorphous Oxide Bipolar Heterojunction Diodes from Abundant Metals
Adv. Electron. Mater. 1(1-2), 1400023:1-5 (2015)

674
Sylvio Schubert, Florian Schmidt, Holger von Wenckstern, Marius Grundmann, Karl Leo, Lars Müller-Meskamp
Eclipse Pulsed Laser Deposition for Damage-Free Preparation of Transparent ZnO Electrodes on Top of Organic Solar Cells
Adv. Funct. Mater. 25(27), 4321-4327 (2015)

673
Stefan Müller, Holger von Wenckstern, Florian Schmidt, Daniel Splith, Friedrich-Leonhard Schein, Heiko Frenzel, Marius Grundmann
Comparison of Schottky contacts on β-gallium oxide thin films and bulk crystals
Appl. Phys. Expr. 8(12), 121102:1-4 (2015)

672
Robert Schewski, Günter Wagner, Michele Baldini, Daniela Gogova, Zbigniew Galazka, Tobias Schulz, Thilo Remmele, Toni Markurt, Holger von Wenckstern, Marius Grundmann, Oliver Bierwagen, Patrick Vogt, Martin Albrecht
Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001)
Appl. Phys. Expr. 8(1), 011101:1-4 (2015)

671
Steffen Richter, Tom Michalsky, Lennart Fricke, Chris Sturm, Helena Franke, Marius Grundmann, Rüdiger Schmidt-Grund
Maxwell consideration of polaritonic quasi-particle Hamiltonians in multi-level systems
Appl. Phys. Lett. 107(23), 231104:1-5 (2015)

670
Vera Lazenka, Michael Lorenz, Hiwa Modarresi, Manisha Bisht, Rudolf Rüffer, Michael Bonholzer, Marius Grundmann, Margriet J. Van Bael, André Vantomme, Kristiaan Temst
Magnetic spin structure and magnetoelectric coupling in BiFeO3-BaTiO3 multilayer
Appl. Phys. Lett. 106(8), 082904:1-4 (2015)

669
Haoming Wei, Marcus Jenderka, Michael Bonholzer, Marius Grundmann, Michael Lorenz
Modeling the conductivity around the dimensionality-controlled metal-insulator transition in LaNiO3/LaAlO3 (100) superlattices
Appl. Phys. Lett. 106(4), 042103:1-5 (2015)

668
F.J. Klüpfel, H. von Wenckstern, M. Grundmann
Low Frequency Noise of ZnO based MESFETs
Appl. Phys. Lett. 106(3), 033502:1-4 (2015)

667
Michael Lorenz, Gerald Wagner, Vera Lazenka, Peter Schwinkendorf, Hiwa Modarresi, Margriet J. Van Bael, André Vantomme, Kristiaan Temst, Oliver Oeckler, Marius Grundmann
Correlation of magnetoelectric coupling in multiferroic BaTiO3-BiFeO3 superlattices with oxygen vacancies and antiphase octahedral rotations
Appl. Phys. Lett. 106(1), 012905:1-5 (2015)

666
Chris Sturm, Jürgen Furthmüller, Friedhelm Bechstedt, Rüdiger Schmidt-Grund, Marius Grundmann
Dielectric tensor of monoclinic Ga2O3 single crystals in the spectral range 0.5-8.5 eV
APL Mater. 3, 106106:1-9 (2015)

665
Chris Sturm, Jürgen Furthmüller, Friedhelm Bechstedt, Rüdiger Schmidt-Grund, Marius Grundmann
Dielectric tensor of monoclinic Ga2O3 single crystals in the spectral range 0.5-8.5eV
arxiv: 1507.05401 (2015)

664
Vitaly Zviagin, Peter Richter, Tammo Böntgen, Michael Lorenz, Michael Ziese, Dietrich R.T. Zahn, Georgeta Salvan, Marius Grundmann, Rüdiger Schmidt-Grund
Comparative Study of Optical and Magneto-Optical Properties of Normal, Disordered and Inverse Spinel Type Oxides
arxiv: 1505.04664 (2015)

663
I. Lorite, C. Zandalazini, P. Esquinazi, D. Spemann, S. Friedländer, A. Pöppl, T. Michalsky, M. Grundmann, J. Vogt, J. Meijer, S.P. Heluani, H. Ohldag, W.A. Adeagbo, S.K. Nayak, W. Hergert, A. Ernst, M. Hoffmann
Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires
arxiv: 1504.08230 (2015)

662
Steffen Richter, Stefan G. Ebbinghaus, Marius Grundmann, Rüdiger Schmidt-Grund
Antiferromagnetic phase transition in the temperature-dependent NIR-VUV dielectric function of hexagonal YMnO3
arxiv: 1503.04043 (2015)

661
T. Michalsky, H. Franke, C. Sturm, M. Grundmann, R. Schmidt-Grund
Discrete relaxation of exciton-polaritons in an inhomogeneous potential
arxiv: 1501.02644 (2015)

660
C.P. Dietrich, R. Schmidt-Grund, T. Michalsky, M. Lange, M. Grundmann
Room-temperature condensation in whispering gallery microresonators assisted by longitudinal optical phonons
arxiv: 1501.01255:1-11 (2015)

659
Fabian Johannes Klüpfel, Agnes Holtz, Friedrich-Leonhard Schein, Holger von Wenckstern, Marius Grundmann
All-Oxide Inverters Based On ZnO Channel JFETs With Amorphous ZnCo2O4 Gates
IEEE Transact. Electr. Dev. 62(12), 4004-4008 (2015)

658
R. Karsthof, H. von Wenckstern, M. Grundmann
Transparent JFETs Based on p-NiO/n-ZnO Heterojunctions
IEEE Transact. Electr. Dev. 62(12), 3999-4003 (2015)

657
R. Schmidt-Grund, C. Kranert, H. von Wenckstern, V. Zviagin, M. Grundmann
Dielectric function in the spectral range (0.5-8.5)eV of an (AlxGa1-x)2O3 thin film with continuous composition spread
J. Appl. Phys. 117(16), 165307:1-7 (2015)

656
Christian Kranert, Marcus Jenderka, Jörg Lenzner, Michael Lorenz, Holger von Wenckstern, Rüdiger Schmidt-Grund, Marius Grundmann
Lattice parameters and Raman-active phonon modes of β-(AlxGa1-x)2O3
J. Appl. Phys. 117(12), 125703:1-6 (2015)

655
Marcus Jenderka, Rüdiger Schmidt-Grund, Marius Grundmann, Michael Lorenz
Electronic excitations and structure of Li2IrO3 thin films grown on ZrO2:Y (001) substrates
J. Appl. Phys. 117(2), 025304:1-5 (2015)

654
Rolf Böttcher, Michael Lorenz, Andreas Pöppl, Daniel Spemann, Marius Grundmann
Local zinc blende coordination in heteroepitaxial wurtzite Zn1-xMgxO:Mn thin films with 0.01 ≤ x ≤ 0.04 identified by electron paramagnetic resonance
J. Mater. Chem. C 3, 11918-11929 (2015)

653
I. Lorite, C. Zandalazini, P. Esquinazi, D. Spemann, S. Friedländer, A. Pöppl, T. Michalsky, M. Grundmann, J. Vogt, J. Meijer, S.P. Heluani, H. Ohldag, W.A. Adeagbo, S.K. Nayak, W. Hergert, A. Ernst, M. Hoffmann
Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires
J. Phys.: Condens. Matter 27, 256002:1-6 (2015)

652
Christian Kranert, Rüdiger Schmidt-Grund, Marius Grundmann
Free charge carriers as origin for redshift of LO modes in wurtzite semiconductors excited above the band gap
J. Raman Spectr. 46, 167-170 (2015)

651
Araceli de Pablos-Martin, M. Ebert, C. Patzig, M. Krause, M. Dyrba, P. Miclea, M. Lorenz, M. Grundmann, Th. Höche
Laser Welding of Sapphire Wafers Using a Thin-Film Fresnoite Glass Solder
Microsyst. Technol. 21(5), 1035-1045 (2015)

650
C.P. Dietrich, R. Johne, T. Michalsky, C. Sturm, P. Eastham, H. Franke, M. Lange, M. Grundmann, R. Schmidt-Grund
Parametric relaxation in whispering-gallery mode exciton-polariton condensates
Phys. Rev. B 91(4), 041202(R):1-6 (2015)

649
Abdurashid Mavlonov, Steffen Richter, Holger von Wenckstern, Rüdiger Schmidt-Grund, Jörg Lenzner, Michael Lorenz, Marius Grundmann
Doping efficiency and limits in (Mg,Zn)O:Al,Ga thin films with two-dimensional lateral composition spread
Phys. Status Solidi A 212(12), 2850-2855 (2015)

648
Haoming Wei, Marcus Jenderka, Marius Grundmann, Michael Lorenz
LaNiO3 films with tunable out-of-plane lattice parameter and their strain-related electrical properties
Phys. Status Solidi A 212(9), 1925-1930 (2015)

647
Heiko Frenzel, Tobias Dörfler, Peter Schlupp, Holger von Wenckstern, Marius Grundmann
Long-throw magnetron sputtering of amorphous Zn-Sn-O-thin films at room temperature
Phys. Status Solidi A 212(7), 1482-1486 (2015)

646
Michael Lorenz, Tobias Weiss, Florian Schmidt, Holger von Wenckstern, Marius Grundmann
Aluminium- and gallium-doped homoepitaxial ZnO thin films: Strain-engineering and electrical performance
Phys. Status Solidi A 212(7), 1440-1447 (2015)

645
Marius Grundmann
Karl Bädeker (1877-1914) and the discovery of transparent conductive materials
Phys. Status Solidi A 212(7), 1409-1426 (2015)

644
Marius Grundmann, Andreas Rahm, Holger von Wenckstern
Transparent Conductive Oxides - Preface
Phys. Status Solidi A 212(7), 1408 (1 page) (2015)

643
Special section on Transparent Conductive Oxides
Phys. Status Solidi A 212(7), 1407-1498 (2015), Marius Grundmann, Andreas Rahm, Holger von Wenckstern, eds.

642
M. Grundmann
Theory of Semiconductor Solid and Hollow Nano- and Microwires With Hexagonal Cross-Section Under Torsion
Phys. Status Solidi B 252, 773-785 (2015)

641
Florian Schmidt, Daniel Splith, Stefan Müller, Holger von Wenckstern, Marius Grundmann
Electronic defects in In2O3 and In2O3:Mg thin films on r-plane sapphire
Phys. Status Solidi B 252(10), 2304-2308 (2015)

640
Holger von Wenckstern, Daniel Splith, Marcus Purfürst, Zhipeng Zhang, Christian Kranert, Stefan Müller, Michael Lorenz, Marius Grundmann
Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon
Semic. Sci. Technol. 30(2), 024005:1-7 (2015)

639
Michael Lorenz, Holger Hochmuth, Max Kneiß, Michael Bonholzer, Marcus Jenderka, Marius Grundmann
From high-TC superconductors to highly correlated Mott insulators - 25 years of pulsed laser deposition of functional oxides in Leipzig
Semic. Sci. Technol. 30(2), 024003:1-10 (2015)

638
Saskia F. Fischer, Marius Grundmann
Semiconductor Functional Oxides
Semic. Sci. Technol. 30(2), 020301:1-2 (2015)

637
Special issue on semiconductor functional oxides
Semic. Sci. Technol. 30(2) (2015), S.F. Fischer, M. Grundmann, eds.

636
C. Bundesmann, R. Feder, R. Wunderlich, U. Teschner, M. Grundmann, B. Rauschenbach, H. Neumann
Ion beam sputter deposition of Ge films: Influence of process parameters on film properties
Thin Solid Films 589, 487-492 (2015)

635
S. Puttnins, M.S. Hammer, J. Neerken, I.Riedel, F. Daume, A. Rahm, A.Braun, M. Grundmann, T. Unold
Impact of Sodium on the Device Characteristics of Low Temperature-Deposited CIGSe-Solar Cells
Thin Solid Films 582, 85-90 (2015)

634
Marius Grundmann
Bipolar oxide devices - Putting pn-heterostructures to work
BuildMoNa Annual Report 2015, p. 26-29 (2015)

633
David Poppitz, Andriy Lotnyk, Jürgen W. Gerlach, Jörg Lenzner, Marius Grundmann, Bernd Rauschenbach
An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE
Micron 73, 1-8 (2015)

632
Report of The Physics Institutes of Universität Leipzig 2014
Universität Leipzig, M. Grundmann, ed.

631
Marius Grundmann
The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 2nd edition, reprint
(Beijing World Publishing Corporation, Beijing, 2014), ISBN 978-7-5100-7781-4

630
Marius Grundmann, Robert Karsthof, Holger von Wenckstern
Interface Recombination Current in Type II Heterostructure Bipolar Diodes
ACS Appl. Mater. Interfaces 6(17), 14785-14789 (2014)

629
Tomasz Jakubczyk, Helena Franke, Tomasz Smolenski, Maciej Sciesiek, Wojciech Pacuski, Andrzej Golnik, Rüdiger Schmidt-Grund, Marius Grundmann, Carsten Kruse, Detlef Hommel, Piotr Kossackiy
Inhibition and Enhancement of the Spontaneous Emission of Quantum Dots in Micropillar Cavities with Radial Distributed Bragg Reflectors
ACS Nano 8(10), 9970-9978 (2014)

628
Christian Tessarek, Robert Röder, Tom Michalsky, Sebastian Geburt, Helena Franke, Rüdiger Schmidt-Grund, Martin Heilmann, Björn Hoffmann, Carsten Ronning, Marius Grundmann, Silke Christiansen
Improving the optical properties of self-catalyzed GaN microrods towards whispering gallery mode lasing
ACS Photonics 1(10), 990-997 (2014)

627
T. Michalsky, M. Wille, C.P. Dietrich, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann
Phonon-assisted Lasing in ZnO Microwires at Room Temperature
Appl. Phys. Lett. 105(21), 211106:1-4 (2014)

626
R. Schmidt-Grund, H. Krauß, C. Kranert, M. Bonholzer, M. Grundmann
Temperature dependence of the dielectric function in the spectral range (0.5-8.5) eV of an In2O3 thin film
Appl. Phys. Lett. 105(11), 111906:1-4 (2014)

625
Max Kneiß, Marcus Jenderka, Kerstin Brachwitz, Michael Lorenz, Marius Grundmann
Modeling the electrical transport in epitaxial undoped and Ni-, Cr-, and W-doped TiO2 anatase thin films
Appl. Phys. Lett. 105(6), 062103:1-5 (2014)

624
Marko Stölzel, Alexander Müller, Gabriele Benndorf, Michael Lorenz, Marius Grundmann, Christian Patzig, Thomas Höche
Determination of the spontaneous polarization of wurtzite (Mg,Zn)O
Appl. Phys. Lett. 104(19), 192102:1-4 (2014)

623
Friedrich-Leonhard Schein, Markus Winter, Tammo Böntgen, Holger von Wenckstern, Marius Grundmann
Highly rectifying p-ZnCo2O4/n-ZnO heterojunction diodes
Appl. Phys. Lett. 104(2), 022104:1-4 (2014)

622
H. von Wenckstern, D. Splith, F. Schmidt, M. Grundmann, O. Bierwagen, J.S. Speck
Schottky contacts to In2O3
APL Mater. 2, 046104:1-7 (2014)

621
Martin Thunert, Alexander Janot, Helena Franke, Chris Sturm, Tom Michalsky, María Dolores Martín, Luis Viña, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund
Cavity Polariton Condensate in a Disordered Environment
arxiv: 1412.8667:1-12 (2014)

620
T. Michalsky, M. Wille, C. P. Dietrich, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann
Phonon-Assisted Lasing in ZnO Microwires at Room Temperature
arxiv: 1410.7970 (2014)

619
Marcus Jenderka, Rüdiger Schmidt-Grund, Marius Grundmann, Michael Lorenz
Electronic excitations and structure of Li2IrO3 thin films grown on ZrO2:Y (001) substrates
arxiv: 1407.3596 (2014)

618
Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann
Monolithic multichannel ultraviolet photodiodes based on (Mg,Zn)O thin films with continuous composition spreads
IEEE J. Sel. Top. Quantum Electr. 20(6), 3801606:1-6 (2014)

617
Stefan Müller, Holger von Wenckstern, Florian Schmidt, Daniel Splith, Robert Heinold, Martin Allen, Marius Grundmann
Method of choice for fabrication of high-quality ZnO-based Schottky diodes
J. Appl. Phys. 116(19), 194506:1-12 (2014)

616
Florian Schmidt, Stefan Müller, Holger von Wenckstern, Gabriele Benndorf, Rainer Pickenhain, Marius Grundmann
Impact of strain on defects in (Mg,Zn)O thin films
J. Appl. Phys. 116(10), 103703:1-9 (2014)

615
R. Schmidt-Grund, C. Kranert, T. Böntgen, H. von Wenckstern, H. Krauß, M. Grundmann
Dielectric function in the NIR-VUV spectral range of (InxGa1-x)2O3 thin films
J. Appl. Phys. 116(5), 053510:1-7 (2014)

614
Christian Kranert, Jörg Lenzner, Marcus Jenderka, Michael Lorenz, Holger von Wenckstern, Rüdiger Schmidt-Grund, Marius Grundmann
Lattice parameters and Raman-active phonon modes of (InxGa1-x)2O3 for x < 0.4
J. Appl. Phys. 116(1), 013505:1-7 (2014)

613
Snigdhatanu Acharya, Sumedha Chouthe, Heinrich Graener, Tammo Böntgen, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann, Gerhard Seifert
Ultrafast dynamics of the dielectric functions of ZnO and BaTiO3 thin films after intense femtosecond laser excitation
J. Appl. Phys. 115(5), 053508:1-9 (2014)

612
Rolf Böttcher, Andreas Pöppl, Michael Lorenz, Stefan Friedländer, Daniel Spemann, Marius Grundmann
55Mn Pulsed ENDOR Spectroscopy of Mn2+ Ions in ZnO Thin Films and Single Crystal
J. Magn. Res. 245, 79-86 (2014)

611
Michael Lorenz, Rolf Böttcher, Stefan Friedländer, Andreas Pöppl, Daniel Spemann, Marius Grundmann
Local lattice distortions in oxygen deficient Mn-doped ZnO thin films, probed by electron paramagnetic resonance
J. Mater. Chem. C 2, 4947-4956 (2014)

610
Michael Lorenz, Vera Lazenka, Peter Schwinkendorf, Francis Bern, Michael Ziese, Hiwa Modarresi, Alexander Volodin, Margriet van Bael, Kristiaan Temst, Andre Vantomme, Marius Grundmann
Multiferroic BaTiO3-BiFeO3 composite thin films and multilayers: Strain engineering and magnetoelectric coupling
J. Phys. D: Appl. Phys. 47(13), 135303:1-10 (2014)

609
Michael Lorenz, Araceli de Pablos-Martin, Christian Patzig, Marko Stölzel, Kerstin Brachwitz, Holger Hochmuth, Marius Grundmann, Thomas Höche
Highly textured fresnoite thin films synthesized by pulsed laser deposition with CO2 laser direct heating
J. Phys. D: Appl. Phys. 47(3), 034013:1-9 (2014)

608
Florian Schmidt, Peter Schlupp, Stefan Müller, Christof Peter Dietrich, Holger von Wenckstern, Marius Grundmann, Robert Heinhold, Hyung-Suk Kim, Martin Ward Allen
A DLTS study of ZnO microwire, thin film and bulk material
Proc. Mat. Res. Soc. 1633, 51-54 (2014)

607
H. von Wenckstern, Z. Zhang, J. Lenzner, F. Schmidt, M. Grundmann
A continuous composition spread approach towards monolithic, wavelength-selective multichannel UV-photo-detector arrays
Proc. Mat. Res. Soc. 1633, 123-129 (2014)

606
P. Schlupp, H. von Wenckstern, M. Grundmann
Amorphous zinc-tin oxide thin films fabricated by pulsed laser deposition at room temperature
Proc. Mat. Res. Soc. 1633, 101-104 (2014)

605
J.L. Cholula-Díaz, J. Barzola-Quiquia, H. Krautscheid, C. Kranert, T. Michalsky, P. Esquinazi, M. Grundmann
Conducting behavior of chalcopyrite-type CuGaS2 crystals under visible light
Phys. Chem. Chem. Phys. 16, 21860-21866 (2014)

604
Daniel Splith, Stefan Müller, Florian Schmidt, Holger von Wenckstern, Johan Janse van Rensburg, Walter E. Meyer, Marius Grundmann
Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition
Phys. Status Solidi A 211(1), 40-47 (2014)

603
Stefan Müller, Holger von Wenckstern, Daniel Splith, Florian Schmidt, Marius Grundmann
Control of the conductivity of Si-doped β-Ga2O3 thin films via growth temperature and pressure
Phys. Status Solidi A 211(1), 34-39 (2014)

602
Michael Bonholzer, Michael Lorenz, Marius Grundmann
Layer-by-layer growth of TiN by pulsed laser deposition on in-situ annealed (100) MgO substrates
Phys. Status Solidi A 211(11), 2621-2624 (2014)

601
Peter Schwinkendorf, Michael Lorenz, Holger Hochmuth, Zhipeng Zhang, Marius Grundmann
Interface charging effects in ferroelectric ZnO-BaTiO3 field-effect transistor heterostructures
Phys. Status Solidi A 211(1), 166-172 (2014)

600
Florian Schmidt, Stefan Müller, Rainer Pickenhain, Holger von Wenckstern, Sebastian Geburt, Carsten Ronning, Marius Grundmann
Defect studies on Ar-implanted ZnO thin films
Phys. Status Solidi B 251(5), 937-941 (2014)

599
M. Grundmann, M. Scheibe, M. Lorenz, J. Bläsing, A. Krost
X-ray multiple diffraction of ZnO substrates and heteroepitaxial thin films
Phys. Status Solidi B 251(4), 850-863 (2014)

598
Christian Kranert, Rüdiger Schmidt-Grund, Marius Grundmann
Raman active phonon modes of cubic In2O3
Phys. Status Solidi RRL 8(6), 554-559 (2014)

597
Rüdiger Schmidt-Grund, Steffen Richter, Stefan G. Ebbinghaus, Michael Lorenz, Carsten Bundesmann, Marius Grundmann
Electronic transitions and dielectric function tensor of a YMnO3 single crystal in the NIR
RSC Adv. 4(63), 33549-33554 (2014)

596
S. Puttnins, S. Jander, A. Wehrmann, G. Benndorf, M. Stölzel, A. Müller, H. von Wenckstern, F. Daume, A. Rahm, M. Grundmann
Breakdown characteristics of flexible Cu(In,Ga)Se2 solar cells
Sol. Energy Mat. Sol. Cells 120(Part B), 506-511 (2014)

595
F. Schmidt, H. von Wenckstern, O. Breitenstein, R. Pickenhain, M. Grundmann
Low Rate Deep Level Transient Spectroscopy: A powerful tool for defect characterization in wide bandgap semiconductors
Sol. St. Electr. 92, 40-46 (2014)

594
Lennart Fricke, Tammo Böntgen, Jan Lorbeer, Carsten Bundesmann, Rüdiger Schmidt-Grund, Marius Grundmann
An extended Drude model for the in-situ spectroscopic ellipsometry analysis of ZnO thin layers and surface modifications
Thin Solid Films 571(3), 437-441 (2014)

593
Marius Grundmann, Friedrich-Leonard Schein, Robert Karsthof, Peter Schlupp, Holger von Wenckstern
Several Approaches to Bipolar Oxide Diodes With High Rectification
Adv. Sci. Technol. 93, 252-259 (2014)

592
Marius Grundmann
Amorphous semiconductor diodes - A new paradigm
BuildMoNa Annual Report 2014, p. 28-31 (2014)

591
Report of The Physics Institutes of Universität Leipzig 2013
Universität Leipzig, M. Grundmann, ed.

590
C.P. Dietrich, M. Grundmann
Pulsed-laser deposition growth of ZnO NWs
Wide Band Gap Semiconductor Nanowires: Low-Dimensionality Effects and Growth, Vincent Consonni, Guy Feuillet eds., p. 303-323 (2014) (Wiley-ISTE, 2014), ISBN 978-1-84821-597-9

589
Michael Lorenz, Martin Lange, Christian Kranert, Christof P. Dietrich, Marius Grundmann
Optical properties of and optical devices from ZnO-based nanostructures
Zinc Oxide Nanostructures: Advances and Applications, p. 43-99 (2014), M. Willander, ed. (Pan Stanford Publishing, Singapore, 2014), ISBN 9789814411332

588
Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann
Energy-selective multichannel ultraviolet photodiodes based on (Mg,Zn)O
Appl. Phys. Lett. 103(17), 171111:1-4 (2013)

587
F. Schmidt, S. Müller, H. von Wenckstern, C.P. Dietrich, R. Heinhold, M.W. Allen, M. Grundmann
Comparative Study of Deep Defects in ZnO Microwires, Thin Films and Bulk Single Crystals
Appl. Phys. Lett. 103(6), 062102:1-4 (2013)

586
K. Brachwitz, T. Böntgen, M. Lorenz, M. Grundmann
On the transition point of thermally activated conduction of spinel-type MFe2O4 ferrite thin films (M=Zn,Co,Ni)
Appl. Phys. Lett. 102(17), 172104:1-4 (2013)

585
Friedrich-Leonhard Schein, Holger von Wenckstern, Marius Grundmann
Transparent p-CuI/n-ZnO heterojunction diodes
Appl. Phys. Lett. 102(9), 092109:1-4 (2013)

584
Marcus Jenderka, José Barzola-Quiquia, Zhipeng Zhang, Heiko Frenzel, Marius Grundmann, Michael Lorenz
Mott Variable Range Hopping and Weak Antilocalization Effect in Heteroepitaxial Na2IrO3 Thin Films
arxiv: 1303.5245 (2013)

583
Holger von Wenckstern, Zhipeng Zhang, Florian Schmidt, Jörg Lenzner, Holger Hochmuth, Marius Grundmann
Continuous composition spread using pulsed-laser deposition with a single, segmented target
CrystEngComm 15, 10020-10027 (2013)

582
Fabian Johannes Klüpfel, Friedrich-Leonhard Schein, Michael Lorenz, Heiko Frenzel, Holger von Wenckstern, Marius Grundmann
Comparison of ZnO-based JFET, MESFET, and MISFET
IEEE Transact. Electr. Dev. 60(6), 1828-1833 (2013)

581
R. Schmidt-Grund, T. Lühmann, T. Böntgen, H. Franke, D. Opper, M. Lorenz, M. Grundmann
Temperature dependent dielectric function in the NIR-VUV spectral range of alumina and yttria stabilized zirconia thin films
J. Appl. Phys. 114(22), 223509:1-8 (2013)

580
T. Böntgen, K. Brachwitz, R. Schmidt-Grund, M. Lorenz, M. Grundmann
Vacuum ultraviolett dielectric function of ZnFe2O4 thin films
J. Appl. Phys. 113(7), 073503:1-4 (2013)

579
Alexander Lajn, Holger von Wenckstern, Marius Grundmann, Gerald Wagner, Pedro Barquinha, Elvira Fortunato, Rodrigo Martins
Comparative study of transparent rectifying contacts on semiconducting oxide single crystals and amorphous thin films
J. Appl. Phys. 113(4), 044511:1-13 (2013)

578
J. Zippel, M. Lorenz, M. Lange, M. Stölzel, G. Benndorf, M. Grundmann
Growth control of nonpolar and polar ZnO/MgxZn1-xO quantum wells by pulsed-laser deposition
J. Cryst. Growth 364, 81-87 (2013)

577
M. Lange, C.P. Dietrich, M Lorenz, M. Grundmann
Excitonic and Optical Confinement in Microwire Heterostructures with Non-Polar (Zn,Cd)O/(Mg,Zn)O Multiple Quantum Wells
J. Phys. Chem. C 117(17), 9020-9024 (2013)

576
J. Zippel, M. Lorenz, A. Setzer, M. Rothermel, D. Spemann, P. Esquinazi, M. Grundmann, G. Wagner, R. Denecke, A.A. Timopheev
Defect-induced magnetism in homoepitaxial manganese stabilized zirconia thin films
J. Phys. D: Appl. Phys. 46(27), 275002:1-10 (2013)

575
V.V. Lazenka, M. Lorenz, H. Modarresi, K. Brachwitz, P. Schwinkendorf, T. Böntgen, J. Vanacken, M. Ziese, M. Grundmann, V.V. Moshchalkov
Effect of rare-earth ion doping on multiferroic properties of BiFeO3 thin films grown epitaxially on SrTiO3(100)
J. Phys. D: Appl. Phys. 46(17), 175006:1-9 (2013)

574
Michael Lorenz, Christian Schmidt, Gabriele Benndorf, Tammo Böntgen, Holger Hochmuth, Rolf Böttcher, Andreas Pöppl, Daniel Spemann, Marius Grundmann
Degenerate interface layers in epitaxial scandium-doped ZnO thin films
J. Phys. D: Appl. Phys. 46(6), 065311:1-10 (2013)

573
Felix Daume, Stefan Puttnins, Christian Scheit, Hendrik Zachmann, Andreas Rahm, Alexander Braun, Marius Grundmann
Damp heat treatment of Cu(In,Ga)Se2 solar cells with different sodium content
Materials 6, 5478-5489 (2013)

572
Michael Lorenz, Marius Grundmann, Sandra Wickert, Reinhard Denecke
Oxidation state of tungsten oxide thin films used as gate dielectric for zinc oxide based transistors
Proc. Mat. Res. Soc. 1494, 1649:1-4 (2013)

571
C. Kranert, R. Schmidt-Grund, M. Grundmann
Surface- and point-defect-related Raman scattering in wurtzite semiconductors excited above the band gap
New J. Phys. 15(11), 113048:1-22 (2013)

570
J. Zippel, M. Lorenz, G. Wagner, J. Lenzner, M. Grundmann
Martensitic phase transition and subsequent surface corrugation in manganese stabilized zirconia thin films
Phil. Mag. 93(18), 2329-2339 (2013)

569
Marko Stölzel, Alexander Müller, Gabriele Benndorf, Matthias Brandt, Michael Lorenz, Marius Grundmann
Determination of unscreened exciton states in polar ZnO/(Mg,Zn)O quantum wells with strong quantum-confined Stark effect
Phys. Rev. B 88(4), 045315:1-6 (2013)

568
Marcus Jenderka, José Barzola-Quiquia, Zhipeng Zhang, Heiko Frenzel, Marius Grundmann, Michael Lorenz
Mott variable range hopping and weak antilocalization effect in heteroepitaxial Na2IrO3 thin films
Phys. Rev. B 88(4), 045111:1-6 (2013)

567
Alexander Müller, Marius Grundmann
Tunneling dynamics of excitons in random semiconductor alloys
Phys. Rev. B 87(3), 035134:1-5 (2013)

566
Marius Grundmann, Friedrich-Leonhard Schein, Michael Lorenz, Tammo Böntgen, Jörg Lenzner, Holger von Wenckstern
Cuprous Iodide - a p-type transparent semiconductor: history and novel applications
Phys. Status Solidi A 210(9), 1671-1703 (2013)

565
Heiko Frenzel, Alexander Lajn, Marius Grundmann
One decade of fully transparent oxide thin film transistors: fabrication, performance and stability
Phys. Status Solidi RRL 7(9), 605-615 (2013)

564
Stefan Puttnins, Sergiu Levcenco, Klaus Schwarzburg, Gabriele Benndorf, Felix Daume, Andreas Rahm, Alexander Braun, Marius Grundmann, Thomas Unold
Effect of Sodium on Material and Device Quality in Low Temperature Deposited Cu(In,Ga)Se2
Sol. Energy Mat. Sol. Cells 119, 281-286 (2013)

563
A.A. Timopheev, A.M. Azevedo, N.A. Sobolev, K. Brachwitz, M. Lorenz, M. Ziese, P. Esquinazi, M. Grundmann
Magnetic anisotropy of epitaxial zinc ferrite thin films grown by pulsed laser deposition
Thin Solid Films 527, 273-277 (2013)

562
Marius Grundmann
Transparent semiconductors - from materials growth to devices
BuildMoNa Annual Report 2013, p. 29-33 (2013)

561
Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern
TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE
CA 2765981 C (Canadian Intellectual Property Office, 2013)

560
Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern
Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu ihrer Herstellung und Verwendung
EP 2 446 484 B1 (European Patent Office, Munich, 2013)

559
M. Lorenz, M. Ziese, G. Wagner, P. Esquinazi, M. Grundmann
Exchange bias and magnetoelectric coupling effects in ZnFe2O4-BaTiO3 composite thin films
Ext. Abstracts of the Nature Conference "Frontiers in Electronic Materials", Aachen, Germany (Nanosession: Multiferroic Thin Films and Heterostructures), J. Heber, D. Schlomm, Y. Tokura, R. Waser, M. Wuttig, eds., p. 334 (1 page) (2013)

558
S. Puttnins, H. Kempa, S. Englisch, R. Karsthof, F. Daume, A. Rahm, A. Braun, M. Grundmann
Voltage Dependent Photocurrent in Low-Temperature Deposited CIGSe Solar Cells
Proc. 28th European Photovoltaic Solar Energy Conference and Exhibition, p. 2438-2442 (2013)

557
F. Daume, A. Rahm, A. Braun, M. Grundmann
Sodium in the Degradation Process of Cu(In,Ga)Se2 Solar Cells
Proc. 28th European Photovoltaic Solar Energy Conference and Exhibition, p. 2192-2198 (2013)

556
Report of The Physics Institutes of Universität Leipzig 2012
Universität Leipzig, M. Grundmann, ed.

555
Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern
TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE
US 8,445,904 B2 (United States Patent, 2013)

554
M. Lorenz, A. Reinhardt, H. von Wenckstern, M. Grundmann
Design rules of (Mg,Zn)O-based thin-film transistors with high-κ WO3 dielectric gates
Appl. Phys. Lett. 101(18), 183502:1-4 (2012)

553
Christof Peter Dietrich, Martin Lange, Tammo Böntgen, Marius Grundmann
The corner effect in hexagonal whispering gallery microresonators
Appl. Phys. Lett. 101(14), 141116:1-5 (2012)

552
R. Heinhold, H.-S. Kim, F. Schmidt, H. von Wenckstern, M. Grundmann, R.J. Mendelsberg, R.J. Reeves, S.M. Durbin, M.W. Allen
Optical and defect properties of hydrothermal ZnO with low lithium contamination
Appl. Phys. Lett. 101(6), 062105:1-4 (2012)

551
Florian Schmidt, Holger von Wenckstern, Daniel Spemann, Marius Grundmann
On the radiation hardness of (Mg,Zn)O PLD thin films
Appl. Phys. Lett. 101(1), 012103:1-4 (2012)

550
Christof Peter Dietrich, Martin Lange, Marko Stölzel, Marius Grundmann
Microwire (Mg,Zn)O/ZnO and (Mg,Zn)O/(Cd,Zn)O non-polar quantum well heterostructures for cavity applications
Appl. Phys. Lett. 100(3), 031110:1-4 (2012)

549
Michael Lorenz, Michael Ziese, Gerald Wagner, Jörg Lenzner, Christian Kranert, Kerstin Brachwitz, Holger Hochmuth, Pablo Esquinazi, Marius Grundmann
Exchange bias and magnetoelectric coupling effects in ZnFe2O4-BaTiO3 composite thin films
CrystEngComm 14, 6477-6486 (2012)

548
S. Müller, H. von Wenckstern, O. Breitenstein, J. Lenzner, M. Grundmann
Microscopic identification of hot spots in multi-barrier Schottky contacts on pulsed laser deposition grown zinc oxide thin films
IEEE Transact. Electr. Dev. 59(3), 536-541 (2012)

547
Friedrich-Leonhard Schein, Holger von Wenckstern, Heiko Frenzel, Marius Grundmann
ZnO-based n-channel junction field-effect transistor with room-temperature fabricated p-type ZnCo2O4-gate
IEEE Electron Device Letters 33(5), 676-678 (2012)

546
M. Lange, C.P. Dietrich, K. Brachwitz, T. Böntgen, M. Lorenz, M. Grundmann
(Zn,Cd)O thin films for the application in heterostructures: structural and optical properties
J. Appl. Phys. 112(10), 103517:1-6 (2012)

545
Marko Stölzel, Johannes Kupper, Matthias Brandt, Alexander Müller, Gabriele Benndorf, Michael Lorenz, Marius Grundmann
Electronic and optical properties of ZnO/(Mg,Zn)O quantum wells with and without a distinct QCSE
J. Appl. Phys. 111(6), 063701:1-10 (2012)

544
M. Noltemeyer, F. Bertram, Th. Hempel, B. Bastek, A. Polyakov, J. Christen, M. Brandt, M. Lorenz, M. Grundmann
Excitonic Transport in ZnO
J. Mat. Res. 27(17), 2225-2231 (2012)

543
Steve Durbin, Tim Veal, Marius Grundmann, Jamie Phillips
Focus Issue on Oxide Semiconductors, Introduction
J. Mat. Res. 27(17), 2179 (1 page) (2012) (Materials Research Society, Warrendale, PA, 2012)

542
Focus Issue on Oxide Semiconductors
J. Mat. Res. 27(17) (2012), Steve Durbin, Tim Veal, Marius Grundmann, Jamie Phillips, eds. (Materials Research Society, Warrendale, PA, 2012)

541
Helena Franke, Chris Sturm, Rüdiger Schmidt-Grund, Gerald Wagner, Marius Grundmann
Ballistic propagation of exciton-polariton condensates in a ZnO-based microcavity
New J. Phys. 14(1), 013037:1-12 (2012)

540
M. Lange, J. Kupper, C.P. Dietrich, M. Brandt, M. Stölzel, G. Benndorf, M. Lorenz, M. Grundmann
Exciton localization and phonon sidebands in polar ZnO/MgZnO quantum wells
Phys. Rev. B 86(4), 045318:1-7 (2012)

539
M. Grundmann, C.P. Dietrich
Whispering gallery modes in deformed hexagonal resonators
Phys. Status Solidi B 249(5), 871-879 (2012)

538
M. Brandt, M. Bonholzer, M. Stölzel, G. Benndorf, D. Spemann, M. Lorenz, M. Grundmann
Electrical transport in strained MgxZn1-xO:P thin films grown by pulsed laser deposition on ZnO (000-1)
Phys. Status Solidi B 249(1), 82-90 (2012)

537
M. Schmidt, M. Ellguth, R. Karsthof, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, F.C.C. Ling
On the T2 trap in zinc oxide thin films
Phys. Status Solidi B 249(3), 588-595 (2012)

536
Jan Zippel, Michael Lorenz, Gabriele Benndorf, Marius Grundmann
Persistent layer-by-layer growth for pulsed-laser homoepitaxy of (000-1) ZnO
Phys. Status Solidi RRL 6(11), 433-435 (2012)

535
Martin Lange, Christof P. Dietrich, Kerstin Brachwitz, Marko Stölzel, Michael Lorenz, Marius Grundmann
Visible emission from ZnCdO/ZnO multiple quantum wells
Phys. Status Solidi RRL 6(1), 31-33 (2012)

534
Martin Noltemeyer, Frank Bertram, Thomas Hempel, Barbara Bastek, Juergen Christen, Matthias Brandt, Michael Lorenz, Marius Grundmann
Excitonic transport in ZnO
Proc. SPIE 8263, 82630X:1-7 (2012)

533
Matthias Schmidt, Holger von Wenckstern, Rainer Pickenhain, Marius Grundmann
On the investigation of electronic defect states in ZnO thin films by space charge spectroscopy with optical excitation
Sol. St. Electr. 75, 48-54 (2012)

532
J.P. Richters, J. Kalden, M. Gnauck, C. Ronning, C.P. Dietrich, H. von Wenckstern, M. Grundmann, J. Gutowski, T. Voss
Modal gain and its diameter dependence in single ZnO micro- and nanowires
Semic. Sci. Technol. 27(1), 015005:1-5 (2012)

531
Marius Grundmann
Quantum optics and round corners in Leipzig
BuildMoNa Annual Report 2012, p. 33-37 (2012)

530
H. von Wenckstern, R. Schmidt-Grund, C. Bundesmann, A. Müller, C.P. Dietrich, M. Stölzel, M. Lange, M. Grundmann
The (Mg,Zn)O Alloy
Handbook of Zinc Oxide and Related Materials, Vol. 1 Materials, p. 257-320 (2012), Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855706

529
Heiko Frenzel, Michael Lorenz, Friedrich-L. Schein, Alexander Lajn, Fabian J. Klüpfel, Tobias Diez, Holger von Wenckstern, Marius Grundmann
Metal-semiconductor field-effect transistors and integrated circuits based on ZnO and related oxides
Handbook of Zinc Oxide and Related Materials, Vol. 2 Devices and Nano-Engineering, p. 369-434 (2012), Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855744

528
S. Puttnins, M. Purfürst, M. Hartung, H.-K. Lee, F. Daume, L. Hartmann, A. Rahm, A. Braun, M. Grundmann
The Influence of Sodium on CIGSe Solar Cell Breakdown Characteristics
Proc. 27th European Photovoltaic Solar Energy Conference and Exhibition, p. 2219-2221 (2012)

527
Report of The Physics Institutes of Universität Leipzig 2011
Universität Leipzig, M. Grundmann, ed.

526
Michael Lorenz, Holger von Wenckstern, Marius Grundmann
Tungsten oxide as gate dielectric for highly transparent and temperature-stable zincoxide-based thin-film transistors
Adv. Mater. 23(45), 5383-5386 (2011)

525
C. Kranert, T. Böntgen, R. Schmidt‐Grund, M. Brandt, S. Schöche, C. Sturm, H. Hochmuth, M. Lorenz, M. Grundmann
Structural properties of BaTiO3/ZnO heterostructures and interfaces
AIP Conf. Proc. 1399, 451-452 (2011) (AIP Publishing LLC, New York)

524
C. Sturm, H. Hilmer, R. Schmidt‐Grund, M. Grundmann
Occupation behaviour of the lower exciton-polariton branch in ZnO-based microresonators
AIP Conf. Proc. 1399, 447-448 (2011) (AIP Publishing LLC, New York)

523
C.P. Dietrich, M. Grundmann
Comment on "Exciton-polariton microphotoluminescence and lasing from ZnO whispering-gallery mode microcavities" [Appl. Phys. Lett. 98, 161110 (2011)]
Appl. Phys. Lett. 99(13), 136101 (1 page) (2011)

522
Zh. Zhang, H. von Wenckstern, M. Schmidt, M. Grundmann
Wavelength selective metal-semiconductor-metal photodetectors based on (Mg,Zn)O-heterostructures
Appl. Phys. Lett. 99(8), 083502:1-3 (2011)

521
C.P. Dietrich, M. Lange, F.J. Klüpfel, H. von Wenckstern, R. Schmidt-Grund, M. Grundmann
Strain distribution in bent ZnO microwires
Appl. Phys. Lett. 98(3), 031105:1-3 (2011)

520
Michael Bachmann, Karsten Goede, Annette G. Beck-Sickinger, Marius Grundmann, Anders Irbäck, Wolfhard Janke
Microscopic Mechanism of Specific Peptide Adhesion to Semiconductor Substrates
arxiv: 1107.1208 (2011)

519
Alexander Müller, Michael Lorenz, Kerstin Brachwitz, Jörg Lenzner, Kai Mittwoch, Wolfgang Skorupa, Marius Grundmann, Thomas Höche
Fresnoite Thin Films grown by Pulsed Laser Deposition: Photoluminescence and Laser Crystallization
CrystEngComm 13(21), 6377-6385 (2011)

518
A. Lajn, T. Diez, F. Schein, H. Frenzel, H. von Wenckstern, M. Grundmann
Light and temperature stability of fully transparent ZnO-based inverter circuits
IEEE Electron Device Letters 32(4), 515-517 (2011)

517
J. Zippel, M. Lorenz, J. Lenzner, M. Grundmann, T. Hammer, A. Jacquot, H. Böttner
Electrical transport and optical emission of MnxZr1-xO2 (0<x<0.5) thin films
J. Appl. Phys. 110(4), 043706:1-6 (2011)

516
C.C. Dey, S. Dey, S.C. Bedi, S.K. Das, M. Lorenz, M. Grundmann, J. Vogt, T. Butz
Hafnium Oxide Thin Films Studied by Time Differential Perturbed Angular Correlations
J. Appl. Phys. 109(11), 113918:1-6 (2011)

515
F.J. Klüpfel, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann
Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors
J. Appl. Phys. 109(7), 074515:1-4 (2011)

514
C.P. Dietrich, M. Brandt, M. Lange, J. Kupper, T. Böntgen, H. von Wenckstern, M. Grundmann
Defect properties of ZnO and ZnO:P microwires
J. Appl. Phys. 109(1), 013712:1-5 (2011)

513
M. Lange, C.P. Dietrich, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, M. Grundmann
Thermal stability of ZnO/ZnCdO/ZnO double heterostructures grown by pulsed laser deposition
J. Cryst. Growth 328(1), 13-17 (2011)

512
A. Lajn, M. Schmidt, H. von Wenckstern, M. Grundmann
Erratum: Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO
J. Electr. Mat. 40(4), 477 (1 page) (2011)

511
A. Lajn, M. Schmidt, H. von Wenckstern, M. Grundmann
Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO
J. Electr. Mat. 40, 473-476 (2011)

510
M. Lange, C.P. Dietrich, J. Zúñiga-Pérez, H. von Wenckstern, M. Lorenz, M. Grundmann
MgZnO/ZnO quantum well nanowire heterostructures with large confinement energies
J. Vac. Sci. Technol. A 29(3), 03A104:1-5 (2011)

509
C.P. Dietrich, M. Lange, C. Sturm, R. Schmidt-Grund, M. Grundmann
One- and two-dimensional cavity modes in ZnO microwires
New J. Phys. 13(10), 103021:1-9 (2011)

508
Chris Sturm, Helena Hilmer, Rüdiger Schmidt-Grund, Marius Grundmann
Exciton-polaritons in a ZnO-based microcavity: polarization dependence and non-linear occupation
New J. Phys. 13(3), 033014:1-17 (2011)

507
C. Sturm, H. Hilmer, B. Rheinländer, R. Schmidt-Grund, M. Grundmann
Cavity-photon dispersion in one-dimensional confined microresonators with an optically anisotropic cavity material
Phys. Rev. B 83(20), 205301:1-12 (2011)

506
M. Ellguth, M. Schmidt, R. Pickenhain, M. Grundmann
Characterization of point defects in ZnO thin films by Optical Deep Level Transient Spectroscopy
Phys. Status Solidi B 248(4), 941-949 (2011)

505
M. Grundmann
Formation of Epitaxial Domains: Unified Theory and Survey of Experimental Results
Phys. Status Solidi B 248(4), 805-824 (2011) [Editor's Choice]

504
Matthias Schmidt, Kerstin Brachwitz, Florian Schmidt, Martin Ellguth, Holger von Wenckstern, Rainer Pickenhain, Marius Grundmann, Gerhard Brauer, Wolfgang Skorupa
Nickel-related defects in ZnO - A deep-level transient spectroscopy and photo-capacitance study
Phys. Status Solidi B 248(8), 1949-1955 (2011)

503
M. Lorenz, M. Brandt, K. Mexner, K. Brachwitz, M. Ziese, P. Esquinazi, H. Hochmuth, M. Grundmann
Ferrimagnetic ZnFe2O4 thin films on SrTiO3 single crystals with highly tunable electrical conductivity
Phys. Status Solidi RRL 5(12), 438-440 (2011)

502
M. Brandt, H. von Wenckstern, M. Stölzel, H. Hochmuth, M. Lorenz, M. Grundmann
Semiconducting oxide heterostructures
Semic. Sci. Technol. 26(1), 014040:1-9 (2011)

501
T. Böntgen, S. Schöche, R. Schmidt-Grund, C. Sturm, M. Brandt, H. Hochmuth, M. Lorenz, M. Grundmann
Optical properties of BaTiO3/ZnO heterostructures under the effect of an applied bias
Thin Solid Films 519, 2933-2935 (2011)

500
R. Schmidt-Grund, P. Kühne, C. Czekalla, D. Schumacher, C. Sturm, M. Grundmann
Determination of the refractive index of single crystal bulk samples and micro-structures
Thin Solid Films 519, 2777-2781 (2011)

499
T. Höche, M. Lorenz, A. Müller, M. Grundmann, K. Mittwoch
Laser patterning of thin films for luminescence applications
18th European Microelectronics and Packaging Conference (EMPC), p. 1-5 (2011), ISBN 978-1-4673-0694-2

498
Marius Grundmann
Oxide-based novel electronic and photonic building blocks
BuildMoNa Annual Report 2011, p. 36-39 (2011)

497
H. Frenzel, A. Lajn, H. von Wenckstern, M. Grundmann
Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu seiner Herstellung und Verwendung
DE 10 2009 030 045 B3 (Deutsches Patent- und Markenamt, München, 2011)

496
Michael Lorenz, Holger Hochmuth, Christoph Grüner, Helena Hilmer, Alexander Lajn, Daniel Spemann, Matthias Brandt, Jan Zippel, Rüdiger Schmidt-Grund, Holger von Wenckstern, Marius Grundmann
Oxide thin film heterostructures on large area, with flexible doping, low dislocation density and abrupt interfaces - grown by Pulsed Laser Deposition
Laser Chemistry 2011, 140976:1-27 (2011) (Hindawi, New York, 2011)

495
F. Daume, C. Scheit, S. Puttnins, A. Rahm, M. Grundmann
Application of Series Resistance Imaging Techniques To Cu(In,Ga)Se2 Solar Cells
Proc. 26th European Photovoltaic Solar Energy Conference and Exhibition, p. 2955-2957 (2011)

494
S. Puttnins, S. Jander, K. Pelz, S. Heinker, F. Daume, A. Rahm, A. Braun, M. Grundmann
The Influence of Front Contact and Buffer Layer Properties on CIGSe Solar Cell Breakdown Characteristics
Prof. 26th European Photovoltaic Solar Energy Conference and Exhibition, p. 2432-2434 (2011)

493
Report of The Physics Institutes of Universität Leipzig 2010
Universität Leipzig, M. Grundmann, ed.

492
Marius Grundmann
The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 2nd edition
(Springer, Heidelberg, 2010), ISBN 978-3-642-13883-6

491
Marius Grundmann
Nanooptik
(euroforum fachwissen/IIR, 2010)

490
M. Bachmann, K. Goede, A.G. Beck-Sickinger, M. Grundmann, A. Irbäck, W. Janke
Mikroskopischer Mechanismus der spezifischen Adhäsion von Peptiden an Halbleitersubstraten
Angew. Chemie 122(49), 9721-9724 (2010)

489
M. Bachmann, K. Goede, A.G. Beck-Sickinger, M. Grundmann, A. Irbäck, W. Janke
Microscopic Mechanism of Specific Peptide Adhesion to Semiconductor Substrates
Angew. Chemie Int. Ed. 49(49), 9530-9533 (2010)

488
H. Frenzel, A. Lajn, H. von Wenckstern, M. Lorenz, F. Schein, Zh. Zhang, M. Grundmann
Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and their Application in Transparent Integrated Circuits
Adv. Mater. 22(47), 5332-5349 (2010)

487
M. Lorenz, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann, P. Barquinha, R. Martins, E. Fortunato
Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films
Appl. Phys. Lett. 97(24), 243506:1-3 (2010)

486
D. Lausch, K. Petter, R. Bakowskie, C. Czekalla, J. Lenzner, H. von Wenckstern, M. Grundmann
Identification of Pre-Breakdown Mechanism of Silicon Solar Cells at Low Reverse Voltages
Appl. Phys. Lett. 97(7), 073506:1-3 (2010)

485
M. Brandt, M. Lange, M. Stölzel, A. Müller, G. Benndorf, J. Zippel, J. Lenzner, M. Lorenz, M. Grundmann
Control of interface abruptness of polar MgZnO/ZnO quantum wells grown by pulsed laser deposition
Appl. Phys. Lett. 97(5), 052101:1-3 (2010)

484
H. Frenzel, F. Schein, A. Lajn, H. von Wenckstern, M. Grundmann
High-gain integrated inverters based on ZnO MESFET technology
Appl. Phys. Lett. 96(11), 113502:1-3 (2010)

483
H. Frenzel, A. Lajn, H. von Wenckstern, M. Grundmann
Ultrathin gate-contacts for MESFET devices: An alternative approach in transparent electronics
J. Appl. Phys. 107(11), 114515:1-6 (2010)

482
A.O. Ankiewicz, J.S. Martins, M.C. Carmo, M. Grundmann, S. Zhou, H. Schmidt, N.A. Sobolev
Ferromagnetic resonance on metal nanocrystals in Fe and Ni implanted ZnO
J. Appl. Phys. 107(9), 09B518:1-3 (2010)

481
M. Lange, C. Dietrich, C. Czekalla, J. Zippel, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, M. Grundmann
Luminescence Properties of ZnO/Zn1-xCdxO/ZnO double heterostructures
J. Appl. Phys. 107(9), 093530:1-8 (2010)

480
A. Müller, M. Stölzel, G. Benndorf, M. Lorenz, M. Grundmann
Origin of the near-band-edge luminescence in MgxZn1-xO
J. Appl. Phys. 107(1), 013704:1-6 (2010)

479
S. Lautenschlaeger, S. Eisermann, M.N. Hofmann, U. Roemer, M. Pinnisch, A. Laufer, B.K. Meyer, H. von Wenckstern, A. Lajn, F. Schmidt, M. Grundmann, J. Blaesing, A. Krost
Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers
J. Cryst. Growth 312, 2078-2082 (2010)

478
A. Lajn, H. von Wenckstern, G. Benndorf, C.P. Dietrich, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films
J. Electr. Mat. 39, 595-600 (2010)

477
H. von Wenckstern, K. Brachwitz, M. Schmidt, C.P. Dietrich, M. Ellguth, M. Stölzel, M. Lorenz, M. Grundmann
The E3 defect in MgxZn1-xO
J. Electr. Mat. 39, 584-588 (2010)

476
J. Chai, R.J. Mendelsberg, R.J. Reeves, J. Kennedy, H. von Wenckstern, M. Grundmann, K. Doyle, T.H. Meyers, S.M. Durbin
Identification of a deep acceptor level in ZnO due to silver doping
J. Electr. Mat. 39, 577-583 (2010)

475
H. von Wenckstern, S. Müller, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Dielectric passivation of ZnO-based Schottky diodes
J. Electr. Mat. 39, 559-562 (2010)

474
Q.Y. Xu, S.Q. Zhou, D. Bürger, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
Electrical control of magnetoresistance in highly insulating Co-doped ZnO
Jpn. J. Appl. Phys. 49, 043002:1-4 (2010)

473
J. Zippel, S. Heitsch, M. Stölzel, A. Müller, H. von Wenckstern, G. Benndorf, M. Lorenz, H. Hochmuth, M. Grundmann
Optical properties of homo- and heteroepitaxial ZnO/MgxZn1-xO quantum wells grown by pulsed laser deposition
J. Lumin. 130, 520-526 (2010)

472
S. Acharya, S. Chuothe, C. Sturm, H. Graener, R. Schmidt-Grund, M. Grundmann, G. Seifert
Charge carrier dynamics of ZnO and ZnO-BaTiO3 thin films
J. Phys. Conf. Ser. 210, 012048:1-4 (2010)

471
C. Sturm, H. Hilmer, R. Schmidt-Grund, M. Grundmann
Polarization behavior of the exciton-polariton emission of ZnO-based microresonators
Proc. Mat. Res. Soc. 1208E, 1208-O18-08:1-6 (2010)

470
H. von Wenckstern, Z.P. Zhang, M. Lorenz, C. Czekalla, H. Frenzel, A. Lajn, M. Grundmann
Light beam induced current measurements on ZnO Schottky diodes and MESFETs
Proc. Mat. Res. Soc. 1201, 1201-H04-02:1-6 (2010)

469
C.P. Dietrich, A. Müller, M. Stölzel, M. Lange, G. Benndorf, H. von Wenckstern, M. Grundmann
Bound-exciton recombination in MgxZn1-xO thin films
Proc. Mat. Res. Soc. 1201, 1201-H03-08:1-6 (2010)

468
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern, F. Schein, M. Lorenz
ZnO-based MESFET Devices
Proc. Mat. Res. Soc. 1201, 1201-H01-01:1-5 (2010)

467
C.P. Dietrich, M. Lange, G. Benndorf, J. Lenzner, M. Lorenz, M. Grundmann
Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys
New J. Phys. 12(3), 033030:1-10 (2010)

466
M. Mäder, S. Perlt, T. Höche, H. Hilmer, M. Grundmann, B. Rauschenbach
Gold nanostructure matrices by diffraction mask-projection laser ablation: extension to previously inaccessible substrates
Nanotechnology 21, 175304:1-5 (2010)

465
Jan Zippel, Michael Lorenz, Annette Setzer, Gerald Wagner, Nikolai Sobolev, Pablo Esquinazi, Marius Grundmann
Defect induced ferromagnetism in undoped and Mn-doped zirconia thin films
Phys. Rev. B 82(12), 125209:1-5 (2010)

464
Venkata M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, H. Schmidt, N. Ianno, M. Schubert
Interface polarization coupling in piezoelectric-semiconductor ferroelectric heterostructures
Phys. Rev. B 81(19), 195307:1-12 (2010)

463
M. Brandt, H. von Wenckstern, G. Benndorf, M. Lange, C.P. Dietrich, C. Kranert, C. Sturm, R. Schmidt-Grund, H. Hochmuth, M. Lorenz, M. Grundmann, M.R. Wagner, M. Alic, C. Nenstiel, A. Hoffmann
Identification of a donor-related recombination channel in ZnO thin films
Phys. Rev. B 81(7), 073306:1-4 (2010)

462
Marius Grundmann, Tammo Böntgen, Michael Lorenz
The Occurrence of Rotation Domains in Heteroepitaxy
Phys. Rev. Lett. 105(14), 146102:1-4 (2010)

461
W. Anwand, G. Brauer, T.E. Cowan, V. Heera, H. Schmidt, W. Skorupa, H. von Wenckstern, G. Benndorf, M. Grundmann
Structural characterization of H plasma-doped ZnO single crystals by Hall measurements and photoluminescence studies
Phys. Status Solidi A 207, 2426-2431 (2010)

460
M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, H. von Wenckstern
Transparent Semiconducting Oxides: Materials and Devices
Phys. Status Solidi A 207, 1437-1449 (2010)

459
J. Zippel, M. Stölzel, A. Müller, G. Benndorf, M. Lorenz, H. Hochmuth, M. Grundmann
Electronic coupling in ZnO/MgxZn1-xO double quantum wells grown by pulsed laser deposition
Phys. Status Solidi B 247, 398-404 (2010)

458
O. Albrecht, R. Zierold, C. Patzig, J. Bachmann, C. Sturm, B. Rheinländer, M. Grundmann, D. Görlitz, B. Rauschenbach, K. Nielsch
Magnetic tubular nanostructures based on glancing-angle deposited templates and atomic layer deposition
Phys. Status Solidi B 247, 1365-1371 (2010)

457
R. Schmidt-Grund, H. Hilmer, A. Hinkel, C. Sturm, B. Rheinländer, V. Gottschalch, M. Lange, J. Zúñiga-Pérez, M. Grundmann
Two-dimensional confined photonic wire resonators - strong light-matter coupling
Phys. Status Solidi B 247, 1351-1364 (2010)

456
R. Kaden, G. Wagner, C. Strum, R. Schmidt-Grund, H. von Wenckstern, A. Prager, K. Bente, M. Grundmann
Synthesis and physical properties of cylindrite micro tubes and lamellae
Phys. Status Solidi B 247, 1335-1350 (2010)

455
C. Czekalla, T. Nobis, A. Rahm, B. Cao, J. Zúñiga-Pérez, C. Sturm, R. Schmidt-Grund, M. Lorenz, M. Grundmann
Whispering gallery modes in ZnO nano- and microwires
Phys. Status Solidi B 247, 1282-1293 (2010)

454
M. Lorenz, A. Rahm, B. Cao, J. Zúñiga-Pérez, E.M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, M. Grundmann
Self-organized growth of ZnO-based nano- and microstructures
Phys. Status Solidi B 247, 1265-1281 (2010)

453
M. Grundmann
Architecture of nano- and microdimensional building blocks
Phys. Status Solidi B 247(6), 1257-1264 (2010)

452
Scientific report of the Forschergruppe 522
Phys. Status Solidi B 247(6), 1257-1392 (2010), M. Grundmann, ed.

451
M. Schmidt, M. Ellguth, F. Schmidt, Th. Lüder, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa
Defects in a nitrogen-implanted ZnO thin film
Phys. Status Solidi B 247, 1220-1226 (2010)

450
C. Scarlat, K.M. Mok, S. Zhou, M. Vinnichenko, M. Lorenz, M. Grundmann, M. Helm, M. Schubert, H. Schmidt
Voigt effect measurement on PLD grown NiO thin films
Phys. Status Solidi C 7, 334-337 (2010)

449
G. Zimmermann, M. Lange, B. Cao, M. Lorenz, M. Grundmann
Resistivity control of ZnO nanowires by Al-doping
Phys. Status Solidi RRL 4, 82-84 (2010)

448
H. Hilmer, C. Sturm, R. Schmidt-Grund, B. Rheinländer, M. Grundmann
Observation of strong light-matter coupling by spectroscopic ellipsometry
Superlatt. Microstr. 47(1), 19-23 (2010)

447
C.P. Dietrich, M. Lange, G. Benndorf, H. von Wenckstern, M. Grundmann
Donor-acceptor pair recombination in non-stoichiometric ZnO thin films
Sol. St. Comm. 150, 379-382 (2010)

446
M. Lorenz, M. Brandt, M. Lange, G. Benndorf, H. von Wenckstern, D. Klimm, M. Grundmann
Homoepitaxial MgxZn1-xO (0 ≤ x ≤ 0.22) thin films grown by pulsed laser deposition
Thin Solid Films 518, 4623-4629 (2010)

445
Marius Grundmann
ZnO-based alloys for nano-scale optoelectronic devices
BuildMoNa Annual Report 2010, p. 34-39 (2010)

444
B. Cao, J. Zúñiga-Pérez, C. Czekalla, H. Hilmer, J. Lenzner, N. Boukos, A. Travlos, M. Lorenz, M. Grundmann
Tuning the lateral density of ZnO nanowire arrays and its application as physical templates for radial nanowire heterostructures
J. Mat. Chem. 20, 3848-3854 (2010)

443
B.Q. Cao, M. Lorenz, G. Zimmermann, C. Czekalla, M. Brandt, H. von Wenckstern, M. Grundmann
p-type Phosphorus Doped ZnO Wires for Optoelectronic Applications
Nanowires, p. 117-132 (2010), P. Prete, ed., ISBN 978-953-7619-79-4

442
M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern
TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE
PCT Application WO 2010/149616 A1

441
S. Puttnins, H. Zachmann, A. Rahm, G. Benndorf, M. Grundmann
Quantum Efficiency Analysis of Ion Beam Assisted Deposition of Cu(In,Ga)Se2 Solar Cells on Flexible Substrates
Proc. 25th European Photovoltaic Solar Energy Conference and Exhibition, p. 3369-3371 (2010)

440
Report of The Physics Institutes of Universität Leipzig 2009
Universität Leipzig, M. Grundmann, ed.

439
H. Frenzel, M. Lorenz, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Grundmann
ZnO-based metal-semiconductor field-effect transistors on glass substrates
Appl. Phys. Lett. 95(15), 153503:1-3 (2009)

438
M. Voora, T. Hofmann, M. Brandt, M. Lorenz, N. Ashkenov, M. Grundmann, M. Schubert
Electrical properties of ZnO-BaTiO3-ZnO heterostructures with asymmetric interface charge distribution
Appl. Phys. Lett. 95(8), 082902:1-3 (2009)

437
V.M. Voora, T. Hofman, M. Schubert, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov
Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures
Appl. Phys. Lett. 94(14), 142904:1-3 (2009)

436
Shengqiang Zhou, K. Potzger, Qingyu Xu, G. Talut, M. Lorenz, W. Skorupa, M. Helm, J. Fassbender, M. Grundmann, H. Schmidt
Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?
arxiv: 0907.3536 (2009)

435
H. von Wenckstern, J. Zippel, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Two-dimensional electron gases in MgZnO/ZnO heterostructures
Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 99-100 (2009)

434
H. Frenzel, H. von Wenckstern, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Interface effects in ZnO metal-insulator-semiconductor and metal-semiconductor structures
Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 469-470 (2009)

433
R. Schmidt-Grund, C. Sturm, H. Hilmer, J. Sellmann, C. Czekalla, B. Rheinländer, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann
Exciton-polaritons in ZnO microcavity resonators
Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 175-176 (2009)

432
H. Hilmer, J. Sellmann, Ch. Sturm, R. Schmidt-Grund, B. Rheinländer, H. Hochmuth, J. Lenzner, M. Lorenz, M. Grundmann
PLD Growth of High Reflective All-Oxide Bragg Reflectors for ZnO Resonators
Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 151-152 (2009)

431
H. von Wenckstern, A. Lajn, A. Laufer, B.K. Meyer, H. Hochmuth M. Lorenz, M. Grundmann
Ag related defect state in ZnO thin films
Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 122-123 (2009)

430
M.W. Allen, S.M. Durbin, X. Weng, J.M. Redwing, K. Sarpatwari, S.E. Mohney, H. von Wenckstern, M. Grundmann
Temperature Dependent Properties of Nearly Ideal ZnO Schottky Diodes
IEEE Transact. Electr. Dev. 56(9), 2160-2164 (2009)

429
M. Grundmann, C.P. Dietrich
Lineshape Theory of Photoluminescence from Semiconductor Alloys
J. Appl. Phys. 106(12), 123521:1-10 (2009)

428
Q.Y. Xu, S. Zhou, D. Markó, K. Potzger, J. Fassbender, M. Vinnichenko, M. Helm, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
Paramagnetism in Co-doped ZnO films
J. Phys. D: Appl. Phys. 42(8), 085001:1-5 (2009)

427
M. Brandt, H. Frenzel, H. Hochmuth, M. Lorenz, M. Grundmann, J. Schubert
Ferroelectric thin film field-effect transistors based on ZnO/BaTiO3 heterostructures
J. Vac. Sci. Technol. B 27(3), 1789-1793 (2009)

426
C. Czekalla, C. Sturm, R. Schmidt-Grund, B. Cao, J. Zúñiga Pérez, M. Lorenz, M. Grundmann
Optical characterization of zinc oxide microlasers and microwire core-shell heterostructures
J. Vac. Sci. Technol. B 27(3), 1780-1783 (2009)

425
A. Lajn, H. von Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Wickert, C. Vogt, R. Denecke
Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type ZnO
J. Vac. Sci. Technol. B 27(3), 1769-1773 (2009)

424
M. Lange, J. Zippel, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann
Temperature Dependence of Localization Effects of Excitons in ZnO/CdxZn1-xO/ZnO Double Heterostructures
J. Vac. Sci. Technol. B 27(3), 1741-1745 (2009)

423
J. Zippel, J. Lenzner, G. Benndorf, M. Lange, H. Hochmuth, M. Lorenz, M. Grundmann
Electronic coupling in MgxZn1-xO/ZnO double quantum wells
J. Vac. Sci. Technol. B 27(3), 1735-1740 (2009)

422
C. Sturm, H. Hilmer, R. Schmidt-Grund, C. Czekalla, J. Sellmann, J. Lenzner, M. Lorenz, M. Grundmann
Strong exciton-photon coupling in ZnO based resonators
J. Vac. Sci. Technol. B 27, 1726-1730 (2009)

421
M. Lorenz, B. Cao, G. Zimmermann, G. Biehne, C. Czekalla, H. Frenzel, M. Brandt, H. von Wenckstern, M. Grundmann
Stable p-type ZnO:P nanowire/n-type ZnO:Ga film junctions, reproducibly grown by two-step pulsed laser deposition
J. Vac. Sci. Technol. B 27(3), 1693-1697 (2009)

420
M. Brandt, H. von Wenckstern, Ch. Meinecke, T. Butz, H. Hochmuth, M. Lorenz, M. Grundmann
Dopant activation in homoepitaxial MgZnO:P thin films
J. Vac. Sci. Technol. B 27(3), 1604-1608 (2009)

419
M. Schmidt, M. Ellguth, C. Czekalla, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa, M. Helm, Q. Gu, Ch.Ch. Ling
Defects in zinc-implanted ZnO thin films
J. Vac. Sci. Technol. B 27(3), 1597-1600 (2009)

418
R. Schmidt-Grund, A. Hinkel, H. Hilmer, J. Zúñiga-Pérez, C. Sturm, B. Rheinländer, M. Grundmann
ZnO nano-pillar resonators with coaxial Bragg reflectors
Proc. Mat. Res. Soc. 1178, 1178-AA10-13:1-7 (2009)

417
C. Sturm, H. Hilmer, R. Schmidt-Grund, M. Grundmann
Observation of strong exciton-photon coupling at temperatures up to 410 K
New J. Phys. 11(7), 073044:1-12 (2009)

416
M. Willander, O. Nur, Q.X. Zhao, L.L. Yang, M. Lorenz, B.Q. Cao, J. Zúñiga-Pérez, C. Czekalla, G. Zimmermann, M. Grundmann, A. Bakin, A. Behrends, M. Al- Suleiman, A. Al-Shaer, A. Che Mofor, B. Postels, A. Waag, N. Boukos, A. Travlos, J. Guinard, D. Le Si Dang
Zinc Oxide Nanorods Based Photonic Devices: Recent Progress in Growth, Light Emitting Diodes and Lasers
Nanotechnology 20(33), 332001:1-40 (2009)

415
B.Q. Cao, J. Zúñiga-Pérez, N. Boukos, C. Czekalla, H. Hilmer, J. Lenzner, A. Travlos, M. Lorenz, M. Grundmann
Homogeneous core/shell ZnO/MgZnO quantum well heterostructures on vertical ZnO nanowires
Nanotechnology 20(30), 305701:1-8 (2009)

414
M. Khalid, M. Ziese, A. Setzer, P. Esquinazi, M. Lorenz, H. Hochmuth, M. Grundmann, D. Spemann, T. Butz, G. Brauer, W. Anwand, G. Fischer, W.A. Adeagbo, W. Hergert, A. Ernst
Defect-induced magnetic order in pure ZnO films
Phys. Rev. B 80(3), 035331:1-5 (2009)

413
H. von Wenckstern, H. Schmidt, M. Brandt, A. Lajn, R. Pickenhain, M. Lorenz, M. Grundmann, D.M. Hofmann, A. Polity, B.K. Meyer, H. Saal, M. Binnewies, A. Börger, K.-D. Becker, V.A. Tikhomirov, K. Jug
Anionic and cationic substitution in ZnO
Prog. Sol. Stat. Chem. 37(2-3), 153-172 (2009)

412
A.O. Ankiewicz, W. Gehlhoff, J.S. Martins, A.S. Pereira, S. Pereira, A. Hoffmann, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, M.C. Carmo, T. Trindade, N.A. Sobolev
Magnetic and structural properties of transition metal doped zinc-oxide nanostructures
Phys. Status Solidi B 246(4), 766-770 (2009)

411
Frank Lipski, Sarad B. Thapa, Joachim Hertkorn, Thomas Wunderer, Stephan Schwaiger, Ferdinand Scholz, Martin Feneberg, Michael Wiedenmann, Klaus Thonke, Holger Hochmuth, Michael Lorenz, Marius Grundmann
Studies towards freestanding GaN in hydride vapor phase epitaxy by in-situ etching of a sacrificial ZnO buffer layer
Phys. Status Solidi C 6(52), S352-S355 (2009)

410
Dominik Lausch, Kai Petter, Holger von Wenckstern, Marius Grundmann
Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells
Phys. Status Solidi RRL 3(2-3), 70-72 (2009)

409
M. Lorenz, M. Brandt, G. Wagner, H. Hochmuth, G. Zimmermann, H. von Wenckstern, M. Grundmann
MgZnO:P Homoepitaxy by Pulsed Laser Deposition: Pseudomorphic Layer-by-Layer Growth and High Electron Mobility
Proc. SPIE 7217, 72170N:1-15 (2009)

408
H. Frenzel, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Grundmann
ZnO-based metal-semiconductor field-effect transistors with Ag-, Pt-, Pd-, and Au-Schottky gates
Thin Solid Films 518, 1119-1123 (2009)

407
M. Brandt, H. von Wenckstern, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann
Formation of a two-dimensional electron gas in MgZnO/ZnO heterostructures and quantum wells
Thin Solid Films 518, 1048-1052 (2009)

406
Marius Grundmann
Transparent oxide electronic devices
BuildMoNa Annual Report 2009, p. 33-35 (2009)

405
R. Bakowskie, H. von Wenckstern, D. Lausch, M. Müller, K. Petter, M. Grundmann
Thermal admittance spectroscopy of multicrystalline silicon wafers and solar cells
Proc. 24th European Photovoltaic Solar Energy Conference, p. 2100-2102 (2009)

404
D. Lausch, K. Petter, R. Bakowskie, H. von Wenckstern, M. Grundmann
Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells
Proc. 24th European Photovoltaic Solar Energy Conference, p. 2053-2055 (2009)

403
Report of The Physics Institutes of Universität Leipzig 2008
Universität Leipzig, M. Grundmann, ed.

402
S.Q. Zhou, K. Potzger, Q.Y. Xu, G. Talut, M. Lorenz, W. Skorupa, M. Helm, J. Fassbender, M. Grundmann, H. Schmidt
Ferromagnetic transition metal implanted ZnO: A diluted magnetic semiconductor?
Vacuum 83(Suppl. 1), S13-S19 (2009)

401
J. Bachmann, R. Zierold, Y.T. Chong, R. Hauert, Ch. Sturm, R. Schmidt-Grund, B. Rheinländer, M. Grundmann, U. Gösele, K. Nielsch
Selbstkatalytische Atomlagenabscheidung von Siliciumdioxid
Angew. Chemie 120(33), 6272-6274 (2008)

400
J. Bachmann, R. Zierold, Y.T. Chong, R. Hauert, Ch. Sturm, R. Schmidt-Grund, B. Rheinländer, M. Grundmann, U. Gösele, K. Nielsch
A Practical, Self-Catalytic, Atomic Layer Deposition of Silicon Dioxide
Angew. Chemie Int. Ed. 47(33), 6177-6179 (2008)

399
S. Zhou, Q. Xu, K. Potzger, G. Talut, R. Grötzschel, J. Fassbender, M. Vinnichenko, J. Grenzer, M. Helm, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
Room temperature ferromagnetism in carbon-implanted ZnO
Appl. Phys. Lett. 93(23), 232507:1-3 (2008)

398
C. Czekalla, Chris Sturm, Rüdiger Schmidt-Grund, Bingqiang Cao, Michael Lorenz, Marius Grundmann
Whispering Gallery Mode Lasing in Zincoxide Microwires
Appl. Phys. Lett. 92(24), 241102:1-3 (2008)

397
H. Frenzel, A. Lajn, M. Brandt, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
ZnO metal-semiconductor field-effect transistors with Ag-Schottky-gates
Appl. Phys. Lett. 92(19), 192108:1-3 (2008)

396
Q. Xu, H. Schmidt, S. Zhou, K. Potzger, M. Helm, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, Ch. Meinecke, M. Grundmann
Room temperature ferromagnetism in ZnO films due to defects
Appl. Phys. Lett. 92(8), 082508:1-3 (2008)

395
R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann
Exciton-polariton formation at room temperature in a planar ZnO resonator structure
Appl. Phys. A 93, 331-337 (2008)

394
Shengqiang Zhou, Qingyu Xu, Kay Potzger, Georg Talut, Rainer Groetzschel, Juergen Fassbender, Mykola Vinnichenko, Joerg Grenzer, Manfred Helm, Holger Hochmuth, Michael Lorenz, Marius Grundmann, Heidemarie Schmidt
Room temperature ferromagnetism in carbon-implanted ZnO
arxiv: 0811.3487 (2008)

393
N. Ghosh, J. Barzola Quiquia, Q. Xu, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
Andreev reflection and spin polarization measurement of Co/YBCO junction
arxiv: 0804.0170 (2008)

392
S. Müller, C. Ronning, M. Lorenz, C. Czekalla, G. Benndorf, H. Hochmuth, M. Grundmann, H. Schmidt
Intense white photoluminescence emission of V-implanted zinc oxide thin films
J. Appl. Phys. 104(12), 123504:1-7 (2008)

391
M. Brandt, H. von Wenckstern, H. Schmidt, A. Rahm, G. Biehne, G. Benndorf, H. Hochmuth, M. Lorenz, Ch. Meinecke, T. Butz, M. Grundmann
High electron mobility of phosphorous doped homoepitaxial ZnO thin films grown by pulsed laser deposition
J. Appl. Phys. 104(1), 013708:1-6 (2008)

390
A.S. Pereira, S. Pereira, T. Trindade, A.O. Ankiewicz, M.C. Carmo, N.A. Sobolev, W. Gehlhoff, A. Hoffmann, M. Grundmann
Surface modification of Co-doped ZnO nanocrystals and its effect on the magnetic properties
J. Appl. Phys. 103(7), 07D140:1-3 (2008)

389
S.B. Thapa, J. Hertkorn, T. Wunderer, F. Lipski, F. Scholz, A. Reiser, Y. Xie, M. Feneberg, K. Thonke, R. Sauer, M. Dürrschnabel, L.D. Yao, D. Gerthsen, H. Hochmuth, M. Lorenz, M. Grundmann
MOVPE growth of GaN around ZnO nanopillars
J. Cryst. Growth 310, 5139-5142 (2008)

388
V.M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, M. Schubert
Interface-charge-coupled polarization response of Pt-BaTiO3-ZnO-Pt heterojunctions: A physical model approach
J. Electr. Mat. 37, 1029-1034 (2008)

387
R. Schmidt-Grund, B. Rheinländer, E.M. Kaidashev, M. Lorenz, M. Grundmann, D. Fritsch, M.M. Schubert, H. Schmidt, C.M. Herzinger
Vacuum Ultraviolet Dielectric Function and Band Structure of ZnO
J. Korean Phys. Soc. 53, 88-93 (2008)

386
Holger von Wenckstern, Matthias Brandt, Heidemarie Schmidt, Christian Hanisch, Gabriele Benndorf, Holger Hochmuth, Michael Lorenz, Marius Grundmann
Homoepitaxial ZnO thin films by pulsed-laser deposition
J. Korean Phys. Soc. 53, 3064-3067 (2008)

385
H. von Wenckstern, G. Biehne, M. Lorenz, M. Grundmann, F.D. Auret, W.E. Meyer, P.J. Janse van Rensburg, M. Hayes, J.M. Nel
Dependence of trap concentrations in ZnO thin films on annealing conditions
J. Korean Phys. Soc. 53, 2861-2863 (2008)

384
D. Fritsch, H. Schmidt, R. Schmidt-Grund, M. Grundmann
Intensity of Optical Absorption Close to the Band Edge in Strained ZnO Films
J. Korean Phys. Soc. 53, 123-126 (2008)

383
F.D. Auret, W.E. Meyer, P.J. Janse van Rensburg, M. Hayes, J.M. Nel, H. von Wenckstern, H. Hochmuth, G. Biehne, M. Lorenz, M. Grundmann
Electronic properties of shallow level defects in ZnO grown by pulsed laser deposition
J. Phys. Conf. Ser. 100, 042038:1-4 (2008)

382
Q. Xu, H. Schmidt, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, Ch. Meinecke, M. Grundmann
Room temperature ferromagnetism in Nd- and Mn-codoped ZnO films
J. Phys. D: Appl. Phys. 41, 105012:1-5 (2008)

381
Venkata Voora, Tino Hofmann, Ann Kjerstad, Matthias Brandt, Michael Lorenz, Marius Grundmann, Mathias Schubert
Interface-charge-coupled polarization response model of Pt-BaTiO3-ZnO-Pt heterojunctions: Physical parameters variation
Proc. Mat. Res. Soc. 1074, I01-11:1-6 (2008)

380
C. Czekalla, J. Guinard, C. Hanisch, B. Cao, E.M. Kaidashev, N. Boukos, A. Travlos, J. Renard, B. Gayral, D. Le Si Dang, M. Lorenz, M. Grundmann
Spatial fluctuations of the optical emission from single ZnO/MgZnO nanowire quantum wells
Nanotechnology 19(11), 115202:1-6 (2008)

379
Q. Xu, L. Hartmann, S. Zhou, A. Mücklich, K. Potzger, M. Helm, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt
Spin manipulation in Co doped ZnO
Phys. Rev. Lett. 101(7), 076601:1-4 (2008)

378
M. Lorenz, G. Wagner, A. Rahm, H. Schmidt, H. Hochmuth, H. Schmid, W. Mader, M. Brandt, H. von Wenckstern, M. Grundmann
Homoepitaxial ZnO Thin Films by PLD: Structural Properties
Phys. Status Solidi C 5, 3280-3287 (2008)

377
C. Sturm, T. Chavdarov, R. Schmidt-Grund, B. Rheinländer, C. Bundesmann, H. Hochmuth, M. Lorenz, M. Schubert, M. Grundmann
Investigation of the free charge carrier properties at the ZnO-sapphire interface in a- plane ZnO films studied by generalized infrared ellipsometry
Phys. Status Solidi C 5, 1350-1353 (2008)

376
V.M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, M. Schubert
Electrooptic ellipsometry study of piezoelectric BaTiO3-ZnO heterostructures
Phys. Status Solidi C 5, 1328-1331 (2008)

375
J. Sellmann, Ch. Sturm, R. Schmidt-Grund, Ch. Czekalla, J. Lenzner, H. Hochmuth, B. Rheinländer, M. Lorenz, M. Grundmann
Structural and optical properties of ZrO2 and Al2O3 thin films and Bragg reflectors grown by pulsed laser deposition
Phys. Status Solidi C 5, 1240-1243 (2008)

374
B. Cao, M. Lorenz, M. Brandt, H. von Wenckstern, J. Lenzner, G. Biehne, M. Grundmann
p-type conducting ZnO:P microwires prepared by direct carbothermal growth
Phys. Status Solidi RRL 2, 37-39 (2008)

373
M. Mäder, J. W. Gerlach, T. Höche, C. Czekalla, M. Lorenz, M. Grundmann, B. Rauschenbach
ZnO nanowall networks grown on DiMPLA pre-patterned thin gold films
Phys. Status Solidi RRL 2, 200-202 (2008)

372
B. Q. Cao, M. Lorenz, H. von Wenckstern, C. Czekalla, M. Brandt, J. Lenzner, G. Benndorf, G. Biehne, M. Grundmann
Phosphorus doped ZnO nanowires: acceptor-related cathodoluminescence and p-type conducting FET-characteristics
Proc. SPIE 6895, 68950V:1-12 (2008)

371
D. Hofstetter, Y. Bonetti, E. Baumann, F.R. Giorgetta, A.-H. El-Shaer, A. Bakin, A. Waag, R. Schmidt-Grund, M. Grundmann, M. Schubert
Characterization of an optically pumped 3rd order distributed feedback laser
Proc. SPIE 6895, 68950J:1-8 (2008)

370
H. von Wenckstern, M. Brandt, H. Schmidt, G. Benndorf, J. Zippel, H. Hochmuth,M. Lorenz, M. Grundmann
Properties of homoepitaxial ZnO and ZnO:P thin films grown by pulsed-laser deposition
Proc. SPIE 6895, 689505:1-11 (2008)

369
A. Müller, G. Benndorf, S. Heitsch, C. Sturm, M. Grundmann
Exciton-phonon coupling and exciton thermalization in MgxZn1-xO thin films
Sol. St. Comm. 148, 570-572 (2008)

368
Qingyu Xu, Heidemarie Schmidt, Shengqiang Zhou, Kay Potzger, Manfred Helm, Holger Hockmuth, Michael Lorenz, Christoph Meinecke, Marius Grundmann
Magnetic and transport properties of Cu1.05Cr0.89Mg0.05O2 and Cu0.96Cr0.95Mg0.05Mn0.04O2 films
Thin Solid Films 516, 8543-8546 (2008)

367
Q. Xu, L. Hartmann, H. Schmidt, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, C. Meinecke, M. Grundmann
Magnetotransport properties of Zn90Mn7.5Cu2.5O thin films
Thin Solid Films 516, 1160-1163 (2008)

366
Marius Grundmann
ZnO-nano-wires for miniaturised light sources
BuildMoNa Annual Report 2008, p. 29-31 (2008)

365
E.M. Kaidashev, M. Lorenz, J. Lenzner, A. Ramm, T. Nobis, M. Grundmann, N. Zakharov, A.T. Kozakov, S.I. Shevtsova, K.G. Abdulvakhidov, V.E. Kaidashev
Structure and optical properties of ZnO nanowires fabricated by pulsed laser deposition on GaN/Si(111) films with the use of Au and NiO catalysts
Bull. Russ. Acad. Sci.: Physics 72(8), 1129-1131 (2008)

364
Marius Grundmann, Andreas Rahm, Thomas Nobis, Michael Lorenz, Christian Czekalla, Evgeni M. Kaidashev, Jörg Lenzner, Nikos Boukos, Anastasios Travlos
Growth and characterization of ZnO nano- and microstuctures
Handbook of Self-Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics, p. 293-323 (2008), M. Henini, ed. (Elsevier, Amsterdam, 2008), ISBN 978-0-08-046325-4

363
Report of The Physics Institutes of Universität Leipzig 2007
Universität Leipzig, M. Grundmann, ed.

362
H. Schmidt, M. Wiebe, B. Dittes, M. Grundmann
Meyer-Neldel rule in ZnO
Appl. Phys. Lett. 91(23), 232110:1-3 (2007)

361
Daniel Hofstetter, Yargo Bonetti, Fabrizio R. Giorgetta, Abdel-Hamid El-Shaer, Andrey Bakin, Andreas Waag, Rüdiger Schmidt-Grund, Mathias Schubert, Marius Grundmann
Demonstration of an ultraviolet ZnO-based optically pumped third order distributed feedback laser
Appl. Phys. Lett. 91(11), 111108:1-3 (2007)

360
Q. Xu, H. Schmidt, L. Hartmann, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, Ch. Meinecke, M. Grundmann
Room temperature ferromagnetism in Mn-doped ZnO films mediated by acceptor levels
Appl. Phys. Lett. 91(9), 092503:1-3 (2007)

359
Holger von Wenckstern, Martin Allen, Heidemarie Schmidt, Paul Miller, R. Reeves, Steve Durbin, Marius Grundmann
Defects in hydrothermally grown bulk ZnO
Appl. Phys. Lett. 91(2), 022913:1-3 (2007)

358
Y. Liu, Q. Xu, H. Schmidt, L. Hartmann, H. Hochmuth, M. Lorenz, M. Grundmann, X. Han, Z. Zhang
Co location and valence state determination in ferromagnetic ZnO:Co thin films by atom-location-by-channeling-enhanced-microanalysis electron energy-loss spectroscopy
Appl. Phys. Lett. 90(15), 154101:1-3 (2007)

357
M. Lorenz, R. Johne, H.P.D. Schenk, S.I. Borenstain, A. Schön, C. Bekeny, T. Voß, J. Gutowski, T. Nobis, H. Hochmuth, J. Lenzner, M. Grundmann
Self absorption in the room-temperature cathodoluminescence of ZnO scintillator thin films on sapphire
Appl. Phys. Lett. 89(24), 243510:1-3 (2007)

356
S. Heitsch, G. Benndorf, G. Zimmermann, C. Schulz, D.Spemann, H. Hochmuth, H. Schmidt, Th. Nobis, M. Lorenz, M. Grundmann
Optical and structural properties of MgZnO/ZnO hetero- and double heterostructures grown by pulsed laser deposition
Appl. Phys. A 88, 99-104 (2007)

355
R. Johne, M. Lorenz, H. Hochmuth, J. Lenzner, H. von Wenckstern, G. Zimmermann, H. Schmidt, R. Schmidt-Grund, M. Grundmann
Cathodoluminescence of large-area PLD grown ZnO thin films measured in transmission and reflection
Appl. Phys. A 88, 89-93 (2007)

354
A. Rahm, M. Lorenz, Th. Nobis, G. Zimmermann, M. Grundmann, B. Fuhrmann, F. Syrowatka
Pulsed Laser Deposition and characterization of ZnO nanowires with regular lateral arrangement
Appl. Phys. A 88, 31-34 (2007)

353
H. Schmidt, M. Diaconu, H. Hochmuth, G. Benndorf, H. von Wenckstern, G. Biehne, M. Lorenz, M. Grundmann
Electrical and optical spectroscopy on ZnO:Co films
Appl. Phys. A 88, 157-160 (2007)

352
H. von Wenckstern, M. Brandt, H. Schmidt, G. Biehne, R. Pickenhain, H. Hochmuth, M. Lorenz, M. Grundmann
Donor like defects in ZnO substrate materials and ZnO thin films
Appl. Phys. A 88, 135-139 (2007)

351
H. von Wenckstern, G. Benndorf, S. Heitsch, J. Sann, M. Brandt, H. Schmidt, J. Lenzner, M. Lorenz, A. Y. Kuznetsov, B.K. Meyer, M. Grundmann
Properties of phosphorous doped ZnO
Appl. Phys. A 88, 125-128 (2007)

350
N. Ghosh, H. Schmidt, M. Grundmann
Andreev reflections at large ferromagnet/high-TC superconductor area junctions with rough interface
arxiv: 0712.2131 (2007)

349
Karsten Goede, Michael Bachmann, Wolfhard Janke, Marius Grundmann
Specific Adhesion of Peptides on Semiconductor Surfaces in Experiment and Simulation
arxiv: 0710.4562 (2007)

348
A.O. Ankiewicz, W. Gehlhoff, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, M.C. Carmo, N.A. Sobolev
Electron Paramagnetic Resonance Characterization of Mn- and Co-Doped ZnO Nanowires
Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 63-64 (2007)

347
Karsten Goede, Michael Bachmann, Wolfhard Janke, Marius Grundmann
Specific adhesion of peptides on semiconductor surfaces in experiment and simulation
Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 611-612 (2007)

346
Susanne Heitsch, Gregor Zimmermann, Jörg Lenzner, Holger Hochmuth, Gabriele Benndorf, Michael Lorenz, Marius Grundmann
Photoluminescence of MgxZn1-xO/ZnO Quantum Wells Grown by Pulsed Laser Deposition
Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 409-410 (2007)

345
Daniel Fritsch, Heidemarie Schmidt, Marius Grundmann
Calculated optical properties of wurtzite GaN and ZnO
Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 325-326 (2007)

344
H. Frenzel, H. von Wenckstern, A. Weber, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Measurement of deep intrinsic defects in thin ZnO films via mid-infrared photocurrent spectroscopy
Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 301-302 (2007)

343
R. Schmidt-Grund, N. Ashkenov, M.M. Schubert, W. Czakai, D. Faltermeier, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann
Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO
Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 271-272 (2007)

342
Chris Sturm, Rüdiger Schmidt-Grund, Ronny Kaden, Holger von Wenckstern, Bernd Rheinländer, Klaus Bente, Marius Grundmann
Optical Properties of Cylindrite
Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 1483-1484 (2007)

341
Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Chris Sturm, Daniel Spemann, Marius Grundmann
The magnetotransport properties of Co-doped ZnO films
Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 1187-1188 (2007)

340
R. Schmidt-Grund, B. Rheinländer, T. Gühne, H. Hochmuth, V. Gottschalch, A. Rahm, J. Lenzner, M. Grundmann
ZnO micro-pillar resonators with coaxial Bragg reflectors
Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 1137-1138 (2007)

339
Thomas Nobis, Andreas Rahm, Michael Lorenz, Marius Grundmann
Temperature dependence of the whispering gallery effect in ZnO nanoresonators
Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 1057-1058 (2007)

338
S. Heitsch, Gregor Zimmermann, Daniel Fritsch, Chris Sturm, Rüdiger Schmidt-Grund, Christian Schulz, Holger Hochmuth, Daniel Spemann, Gabriele Benndorf, Bernd Rheinländer, Thomas Nobis, Michael Lorenz, Marius Grundmann
Luminescence and surface properties of MgxZn1-xO thin films grown by pulsed laser deposition
J. Appl. Phys. 101(8), 083521:1-6 (2007)

337
Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Chris Sturm, Daniel Spemann, Marius Grundmann
Magnetoresistance and anomalous Hall effect in magnetic ZnO films
J. Appl. Phys. 101(6), 063918:1-5 (2007)

336
A.O. Ankiewicz, M.C. Carmo, N.A. Sobolev, W. Gehlhoff, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann
Electron paramagnetic resonance in transition metal-doped ZnO nanowires
J. Appl. Phys. 101(2), 024324:1-6 (2007)

335
A. Rahm, E.M. Kaidashev, H. Schmidt, M. Diaconu, A. Pöppl, R. Böttcher, C. Meinecke, T. Butz, M. Lorenz, M. Grundmann
Growth and characterization of Mn- and Co-doped ZnO nanowires
Microchim. Acta 156, 21-25 (2007)

334
H. von Wenckstern, M. Brandt, J. Lenzner, G. Zimmermann, H. Hochmuth, M. Lorenz, M. Grundmann
Temperature dependent Hall measurements on PLD thin films
Proc. Mat. Res. Soc. 957, 23:1-6 (2007)

333
S. Heitsch, G. Zimmermann, A. Müller, J. Lenzner, H. Hochmuth, G. Benndorf, M. Lorenz, M. Grundmann
Interface and Luminescence Properties of Pulsed Laser Deposited MgZnO/ZnO Quantum Wells with Strong Confinement
Proc. Mat. Res. Soc. 957, 229:1-6 (2007)

332
M. Grundmann, A. Rahm, Th. Nobis, H. von Wenckstern, M. Lorenz, C. Czekalla, J. Lenzner
Growth and Characterization of Optical and Electrical Properties of ZnO Nano- and Microwires
Proc. Mat. Res. Soc. 957, 107:1-6 (2007)

331
R. Schmidt-Grund, C. Sturm, M. Schubert, B. Rheinländer, D. Faltermeier, H. Hochmuth, A. Rahm, J. Bläsing, C. Bundesmann, J. Zúñiga-Pérez, T. Chavdarov, M. Lorenz, M. Grundmann
Valence Band Structure of ZnO and MgxZn1-xO
Proc. Mat. Res. Soc. 1035, 163-169 (2007)

330
Martin Allen, Holger von Wenckstern, Marius Grundmann, Stuart Hatfield, Paul Jefferson, Philip King, Timothy Veal, Chris McConville, Steven Durbin
Mechanisms in the Formation of High Quality Schottky Contacts to n-type ZnO
Proc. Mat. Res. Soc. 1035, 11-16 (2007)

329
B.Q. Cao, M. Lorenz, A. Rahm, H. von Wenckstern, C. Czekalla, J. Lenzner, G. Benndorf, M. Grundmann
Phosphorous acceptor doped ZnO nanowires prepared by pulsed laser deposition
Nanotechnology 18, 455707:1-5 (2007)

328
J. Zúñiga-Pérez, A. Rahm, C. Czekalla, J. Lenzner, M. Lorenz, M. Grundmann
Ordered growth of tilted ZnO nanowires: morphological, structural and optical characterization
Nanotechnology 18, 195303:1-7 (2007)

327
F. Danie Auret, W.E. Meyer, P.J. Janse van Rensburg, M. Hayes, J.M. Nel, Holger von Wenckstern, H. Schmidt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 meV and 370 meV below the conduction band
Physica B 401-402, 378-381 (2007)

326
Q. Xu, L. Hartmann, H. Schmidt, H. Hochmuth, M. Lorenz, D. Spemann, M. Grundmann
s-d exchange interaction induced magnetoresistance in magnetic ZnO
Phys. Rev. B 76(13), 134417:1-4 (2007)

325
H. Frenzel, H. von Wenckstern, A. Weber, H. Schmidt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann
Photocurrent spectroscopy of deep levels in ZnO thin films
Phys. Rev. B 76(3), 035214:1-6 (2007)

324
G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, H. von Wenckstern, M. Brandt, M. Lorenz, M. Grundmann
Defects in N+ ion-implanted ZnO single crystals studied by positron annihilation and Hall effect
Phys. Status Solidi C 4, 3642-3645 (2007)

323
H. von Wenckstern, H. Schmidt, C. Hanisch, M. Brandt, C. Czekalla, G. Benndorf, G. Biehne, A. Rahm, H. Hochmuth, M. Lorenz, M. Grundmann
Homoepitaxy of ZnO by Pulsed-Laser Deposition
Phys. Status Solidi RRL 1, 129-131 (2007)

322
Thomas Nobis, Andreas Rahm, Christian Czekalla, Michael Lorenz, Marius Grundmann
Optical whispering gallery modes in dodecagonal zinc oxide microcrystals
Superlatt. Microstr. 42(1-6), 333-336 (2007)

321
G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, C. Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, M. Grundmann
Comparative characterization of differently grown ZnO single crystals by positron annihilation and Hall effect
Superlatt. Microstr. 42(1-6), 259-264 (2007)

320
Mariana Ungureanu, Heidemarie Schmidt, Qingyu Xu, Holger von Wenckstern, Daniel Spemann, Holger Hochmuth, Michael Lorenz, Marius Grundmann
Electrical and magnetic properties of RE-doped ZnO thin films (RE = Gd, Nd)
Superlatt. Microstr. 42(1-6), 231-235 (2007)

319
H. von Wenckstern, R. Pickenhain, H. Schmidt, M. Brandt, G. Biehne, M. Lorenz, M. Grundmann, G. Brauer
Investigation of acceptor states in ZnO by junction DLTS
Superlatt. Microstr. 42(1-6), 14-20 (2007)

318
R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmut, A. Rahm, M. Lorenz, M. Grundmann
ZnO based planar and micropillar resonators
Superlatt. Microstr. 41(5-6), 360-363 (2007)

317
C. Czekalla, J. Lenzner, A. Rahm, T. Nobis, M. Grundmann
A Zinc Oxide Microwire Laser
Superlatt. Microstr. 41(5-6), 347-351 (2007)

316
Michael Lorenz, Matthias Brandt, Jürgen Schubert, Holger Hochmuth, Holger von Wenckstern, Mathias Schubert, Marius Grundmann
Polarization coupling in epitaxial ZnO/BaTiO3 thin film heterostructures on SrTiO3 (100) substrates
Proc. SPIE 6474, 64741S:1-9 (2007)

315
M. Schmidt, R. Pickenhain, M. Grundmann
Exact Solutions for the Capacitance of Space Charge Regions at Semiconductor Interfaces
Sol. St. Electr. 51(6), 1002-1004 (2007)

314
Mariana Ungureanu, Heidemarie Schmidt, Holger von Wenckstern, Holger Hochmuth, Michael Lorenz, Marius Grundmann, Marian Fecioru-Morariu, Gernot Güntherodt
A comparison between ZnO films doped with 3d and 4f magnetic ions
Thin Solid Films 515, 8761-8763 (2007)

313
M. Grundmann
Nanowhiskers and their applications
1st Saxon Biotechnology Symposium, p. 24 (2007), ISBN 978-3-86780-044-0

312
Report of The Physics Institutes of Universität Leipzig 2006
Universität Leipzig, M. Grundmann, ed.

311
Marius Grundmann
The Physics of Semiconductors, An Introduction including Devices and Nanophysics
(Springer, Heidelberg, 2006), ISBN 978-3-540-25370-9

310
H. von Wenckstern, R. Pickenhain, H. Schmidt, M. Brandt, G. Biehne, M. Lorenz, M. Grundmann
Deep acceptors states in ZnO single crystals
Appl. Phys. Lett. 89(9), 092122:1-3 (2006)

309
D. Fritsch, H. Schmidt, M. Grundmann
Pseudopotential band structures of rocksalt MgO, ZnO, and Mg1-xZnxO
Appl. Phys. Lett. 88(13), 134104:1-3 (2006)

308
H. von Wenckstern, G. Biehne, R. Abdel Rahman, H. Hochmuth, M. Lorenz, M. Grundmann
Mean barrier height of Pd Schottky contacts on ZnO thin films
Appl. Phys. Lett. 88(9), 092102:1-3 (2006)

307
Rüdiger Schmidt-Grund, Anke Carstens, Bernd Rheinländer, Daniel Spemann, Holger Hochmut, Gregor Zimmermann, Michael Lorenz, Marius Grundmann, Craig M. Herzinger, Mathias Schubert
Refractive indices and band-gap properties of rocksalt MgxZn1-xO (0.68≤x≤1)
J. Appl. Phys. 99(12), 123701:1-7 (2006)

306
C. Bundesmann, A. Rahm, M. Lorenz, M. Grundmann, M. Schubert
Infrared optical properties of MgxZn1-xO thin films (0≤x≤1): Long-wavelength optical phonons and dielectric constants
J. Appl. Phys. 99(11), 113504:1-11 (2006)

305
J. Zúñiga-Pérez, V. Muñoz-Sanjosé, M. Lorenz, G. Benndorf, S. Heitsch, D. Spemann, M. Grundmann
Structural characterization of a-plane Zn1-xCdxO (0≤x≤0.085) thin films grown by metal-organic vapor phase epitaxy
J. Appl. Phys. 99(2), 023514:1-6 (2006)

304
E. Schubert, J. Fahlteich, B. Rauschenbach, M. Schubert, M. Lorenz, M. Grundmann, G. Wagner
Recrystallization behavior in chiral sculptured thin films from silicon
J. Appl. Phys. 100(1), 016107:1-3 (2006)

303
Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Daniel Spemann, Marius Grundmann
Magnetoresistance effects in Zn0.90Co0.10O films
J. Appl. Phys. 100(1), 013904:1-4 (2006)

302
M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, G. Benndorf, D. Spemann, A. Setzer, P. Esquinazi, A. Pöppl, H. von Wenckstern, K.-W. Nielsen, R. Gross, H. Schmid, W. Mader, G. Wagner, M. Grundmann
Room-temperature ferromagnetic Mn-alloyed ZnO films obtained by pulsed laser deposition
J. Magn. Magn. Mat. 307, 212-221 (2006)

301
L. Hartmann, Q. Xu, H. Schmidt, H. Hochmuth, M. Lorenz, Ch. Sturm, Ch. Meinecke, M. Grundmann
Spin polarization in Zn0.95Co0.05O:(Al,Cu) thin films
J. Phys. D: Appl. Phys. 39, 4920-4924 (2006)

300
Karsten Goede, Marius Grundmann, Kai Holland-Nell, Annette Beck-Sickinger
Cluster properties of peptides on (100) semiconductor surfaces
Langmuir 22, 8104-8108 (2006)

299
C. Bundesmann, M. Lorenz, M. Grundmann, M. Schubert
Phonon modes, dielectric constants, and exciton mass parameters in ternary MgxZn1-xO
Proc. Mat. Res. Soc. 928E, GG05-03:1-5 (2006)

298
S. Jaensch, H. Schmidt, M. Grundmann
Quantitative scanning capacitance microscopy
Physica B 376-377, 913-915 (2006)

297
M. Diaconu, H. Schmidt, M. Fecioru-Morariu, G. Güntherodt, H. Hochmuth, M. Lorenz, M. Grundmann
Ferromagnetic behavior in Zn(Mn,P)O thin films
Phys. Lett. A 351, 323-326 (2006)

296
Marcus Gonschorek, Heidemarie Schmidt, Jens Bauer, Gabriele Benndorf, Gerald Wagner, Georgii E. Cirlin, Marius Grundmann
Thermally assisted tunneling processes in InGaAs/GaAs quantum dot structures
Phys. Rev. B 74(11), 115312:1-13 (2006)

295
G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, C. Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, M. Grundmann
Defects in virgin and N+-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy
Phys. Rev. B 74(4), 045208:1-10 (2006)

294
Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Chris Sturm, Daniel Spemann, Marius Grundmann
Metal-insulator transition in Co-doped ZnO: Magnetotransport properties
Phys. Rev. B 73(20), 205342:1-5 (2006)

293
G. Brauer, W. Anwand, W. Skorupa, H. Schmidt, M. Diaconu, M. Lorenz, M. Grundmann
Structure and ferromagnetism of Mn+ ion-implanted ZnO thin films on sapphire
Superlatt. Microstr. 39(1-4), 41-49 (2006)

292
H. Schmidt, M. Diaconu, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, A. Pöppl, D. Spemann, K.W. Nielsen, R. Gross, G. Wagner, M. Grundmann
Weak ferromagnetism in textured Zn1-xTMxO thin films
Superlatt. Microstr. 39(1-4), 334-339 (2006)

291
M. Diaconu, H. Schmidt, A. Pöppl, R. Böttcher, J. Hoentsch, A. Rahm, H. Hochmuth, M. Lorenz, M. Grundmann
EPR study on magnetic Zn1-xMnxO
Superlatt. Microstr. 38(4-6), 413-420 (2006)

290
T. Nobis, A. Rahm, M. Lorenz, M. Grundmann
Numerical Modeling of Zinc Oxide Nanocavities to Determine Their Birefringence
Proc. SPIE 6122, 61220V:1-6 (2006)

289
R. Schmidt-Grund, T. Gühne, H. Hochmuth, B. Rheinländer, A. Rahm, V. Gottschalch, J. Lenzner, M. Grundmann
Cylindrical resonators with coaxial Bragg reflectors
Proc. SPIE 6038, 489-498 (2006)

288
M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, H. von Wenckstern, G. Biehne, D. Spemann, M. Grundmann
Deep defects generated in n-conducting ZnO:TM thin films
Sol. St. Comm. 137, 417-421 (2006)

287
Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Daniel Spemann, Andreas Rahm, Marius Grundmann
Magnetoresistance in pulsed laser deposited 3d transition metal doped ZnO films
Thin Solid Films 515, 2549-2554 (2006)

286
S. Heitsch, C. Bundesmann, G. Wagner, G. Zimmermann, A. Rahm, H. Hochmuth, G. Benndorf, H. Schmidt, M. Schubert, M. Lorenz, M. Grundmann
Low temperature photoluminescence and infrared dielectric functions of pulsed laser deposited ZnO thin films on silicon
Thin Solid Films 496, 234-239 (2006)

285
C. Klingshirn, M. Grundmann, A. Hoffmann, B. Meyer, A. Waag
Zinkoxid - Ein alter, neuer Halbleiter
Physik-Journal 5(1), 33-38 (2006)

284
Report of The Physics Institutes of Universität Leipzig 2005
Universität Leipzig, M. Grundmann, ed.

283
M. Lorenz, E.M. Kaidashev, A. Rahm, Th. Nobis, J. Lenzner, G. Wagner, D. Spemann, H. Hochmuth, M. Grundmann
MgxZn1-xO (0≤x<0.2) nanowire arrays on sapphire grown by high-pressure pulsed-laser deposition
Appl. Phys. Lett. 86(14), 143113:1-3 (2005)

282
B.N. Mbenkum, N. Ashkenov, M. Schubert, M. Lorenz, H. Hochmuth, D. Michel, M. Grundmann, G. Wagner
Temperature-dependent dielectric and electro-optic properties of a ZnO-BaTiO3-ZnO heterostructure grown by pulsed-laser deposition
Appl. Phys. Lett. 86(9), 091904:1-3 (2005)

281
Holger von Wenckstern, Swen Weinhold, Gisela Biehne, Rainer Pickenhain, Heidemarie Schmidt, Holger Hochmuth, Marius Grundmann
Donor levels in ZnO
Adv. Sol. St. Phys. 45, 263-274 (2005)

280
Andreas Rahm, Thomas Nobis, Evgeni M. Kaidashev, Michael Lorenz, Gerald Wagner, Jörg Lenzner, Marius Grundmann
High-pressure Pulsed Laser Deposition and Structural Characterization of Zinc Oxide Nanowires
Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 875-876 (2005)

279
Thomas Nobis, Evgeni M. Kaidashev, Andreas Rahm, Michael Lorenz, Jörg Lenzner, Marius Grundmann
Optical Resonances Of Single Zinc Oxide Microcrystals
Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 849-850 (2005)

278
H. Schmidt, M. Diaconu, E. Guzman, H. Hochmuth, M. Lorenz , G. Benndorf, A. Setzer, P. Esquinazi, H. von Wenckstern, D. Spemann, A. Pöppl, R. Böttcher, M. Grundmann
N-conducting, ferromagnetic Mn-doped ZnO thin films on sapphire substrates
Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 351-352 (2005)

277
R. Schmidt-Grund, D. Fritsch, M. Schubert, B. Rheinländer, H. Schmidt, H. Hochmuth, M. Lorenz, C.M. Herzinger, M. Grundmann
Band-to-band transitions and optical properties of MgxZn1-xO films
Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 201-202 (2005)

276
H. von Wenckstern, S. Weinhold, G. Biehne, R. Pickenhain, E.M. Kaidashev, M. Lorenz, M. Grundmann
Static and transient capacitance spectroscopy on ZnO
Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 197-198 (2005)

275
H. von Wenckstern, S. Heitsch, G. Benndorf, D. Spemann, E.M. Kaidashev, M. Lorenz, M. Grundmann
Incorporation and electrical activity of group V acceptors in ZnO thin films
Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 183-184 (2005)

274
C. Bundesmann, M. Schubert, N. Ashkenov, M. Grundmann, G. Lippold, J. Piltz
Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe2-based photoabsorber layers on polyimide substrates
Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 165-166 (2005)

273
Holger von Wenckstern, Rainer Pickenhain, Swen Weinhold, Michael Ziese, Pablo Esquinazi, Marius Grundmann
Electrical properties of Ni/GaAs and Au/GaAs Schottky contacts in high magnetic fields
Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 1333-1334 (2005)

272
T. Nobis, M. Grundmann
Low order whispering gallery modes in hexagonal nanocavities
Phys. Rev. A 72, 063806:1-11 (2005)

271
M. Diaconu, H. Schmidt, A. Pöppl, R. Böttcher, J. Hoentsch, A. Klunker, D. Spemann, H. Hochmuth, M. Lorenz, M. Grundmann
Electron paramagnetic resonance of Zn1-xMnxO thin films and single crystals
Phys. Rev. B 72(8), 085214:1-6 (2005)

270
M. Grundmann, H. von Wenckstern, R. Pickenhain, Th. Nobis, A. Rahm, M. Lorenz
Electrical Properties of ZnO Thin Films and Optical Properties of ZnO-based Nanostructures
Superlatt. Microstr. 38(4-6), 317-328 (2005)

269
M. Grundmann
The bias dependence of the non-radiative recombination current in p-n diodes
Sol. St. Electr. 49, 1446-1448 (2005)

268
M. Lorenz, H. Hochmuth, J. Lenzner, T. Nobis, G. Zimmermann, M. Diaconu, H. Schmidt, H. von Wenckstern, M. Grundmann
Room-temperature luminescence of n-type ZnO thin films grown by pulsed laser deposition in N2, N2O, and O2
Thin Solid Films 486, 205-209 (2005)

267
A. Rahm, G.W. Yang, M. Lorenz, T. Nobis, J. Lenzner, G. Wagner, M. Grundmann
Two-dimensional ZnO:Al nanosheets and nanowalls obtained by Al2O3-assisted thermal evaporation
Thin Solid Films 486, 191-194 (2005)

266
N. Ashkenov, M. Schubert, E. Twerdowski, B.N. Mbenkum, H. Hochmut, M. Lorenz, H. von Wenckstern, W. Grill, M. Grundmann
Rectifying ferroelectric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures
Thin Solid Films 486, 153-157 (2005)

265
M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, G. Benndorf, J. Lenzner, D. Spemann, A. Setzer, K.-W. Nielsen, P. Esquinazi, M. Grundmann
UV optical properties of ferromagnetic Mn-doped ZnO thin films grown by PLD
Thin Solid Films 486, 117-121 (2005)

264
R. Schmidt-Grund, T. Nobis, V. Gottschalch, B. Rheinländer, H. Herrnberger, M. Grundmann
a-Si/SiOx Bragg-reflectors on micro-structured InP
Thin Solid Films 483, 257-260 (2005)

263
Karsten Goede, Michael Bachmann, Wolfhard Janke, Marius Grundmann
Binding specificity of peptides on semiconductor surfaces
4th Biotechnology Symposium 2005 - Abstracts, p. 192 (2005), A.A. Robitzki, A.G. Beck-Sickinger, S. Brakmann, S. Eichler, eds. (Universit, Leipzig, 2005)

262
K. Goede, M. Grundmann, K. Holland-Nell, A.G. Beck-Sickinger, M. Bachmann, W. Janke
Peptide auf neuen Wegen
BIOforum 10, 53-55 (2005)

261
M. Grundmann
Quantenfäden, Quantenpunkte
Effekte der Physik und ihre Anwendungen (3. Auflage), p. 478-483 (2005), M. von Ardenne, G. Musiol, S. Reball, eds. (Harri Deutsch, Frankfurt/M, 2005), ISBN 3-8171-1682-9

260
M. Grundmann
Quantum devices of reduced dimensionality
Encyclopedia of Condensed Matter Physics, p. 17-22 (2005), F. Bassani, J. Liedl, P. Wyder, eds. (Elsevier, Kidlington, 2005), ISBN 978-0-12-369401-0

259
Th. Nobis, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann
Whispering Gallery Modes in Hexagonal Zinc Oxide Micro- and Nanocrystals
NATO Science Series II: Mathematics, Physics and Chemistry 194, 83-98 (2005), N.H. Nickel, E. Terukov, eds. (Kluwer, Dordrecht, 2005), ISBN 1-4020-3474-1

258
M. Grundmann, H. von Wenckstern, R. Pickenhain, S. Weinhold, B. Chengnui, O. Breitenstein
Electrical properties of ZnO thin films and single crystals
NATO Science Series II: Mathematics, Physics and Chemistry 194, 47-57 (2005), N.H. Nickel, E. Terukov, eds. (Kluwer, Dordrecht, 2005), ISBN 1-4020-3474-1

257
D. Fritsch, R. Schmidt-Grund, H. Schmidt, C.M. Herzinger, M. Grundmann
Polarization-dependent optical transitions at the fundamental band gap and higher critical points of wurtzite ZnO
Proc. 5th Int.Conf. Numerical Simulation of Optoelectronic Devices (NUSOD '05), p. 69-70 (2005)

256
Report of The Physics Institutes of Universität Leipzig 2004
Universität Leipzig, M. Grundmann, ed.

255
S. Jaensch, H. Schmidt, M. Grundmann
Quantitative scanning capacitance microscopy for controlling electrical properties below the 25 nm scale
VDI-Berichte 2005(Januar), 221-224 (2005)

254
M. Lorenz, H. Hochmuth, A. Jammoul, G. Ferro, Ch. Förster, J. Pezoldt, J. Zúñiga-Pérez, G. Benndorf, J. Lenzner, R. Schmidt-Grund, M. Grundmann
Luminescence of ZnO thin films grown by pulsed laser deposition on 3C-SiC buffered Si
Wissenschaftlich Technische Berichte des Forschungszentrums Rossendorf FZR 433, 74-82 (2005)

253
M. Lorenz, H. Hochmuth, J. Lenzner, M. Brandt, H. von Wenckstern, G. Benndorf, M. Grundmann
ZnO thin films grown by pulsed laser deposition on 6H-SiC single crystals
Wissenschaftlich Technische Berichte des Forschungszentrums Rossendorf FZR 433, 57-62 (2005)

252
M. Schubert, N. Ashkenov, T. Hofmann, M. Lorenz, H. Hochmuth, H. von Wenckstern, M. Grundmann, G. Wagner
Electro-optical properties of ZnO-BaTiO3-ZnO heterostructures grown by pulsed laser deposition
Ann. Phys. 13, 61-62 (2004)

251
M. Lorenz, H. Hochmuth, R. Schmidt-Grund, E.M. Kaidashev, M. Grundmann
Advances of pulsed laser deposition of ZnO thin films
Ann. Phys. 13, 59-60 (2004)

250
E. Guzman, H. Hochmuth, M. Lorenz, H. von Wenckstern, A. Rahm, E.M. Kaidashev, M. Ziese, A. Setzer, P. Esquinazi, A. Pöppl, D. Spemann, R. Pickenhain, H. Schmidt, M. Grundmann
Pulsed laser deposition of Fe- and Fe, Cu-doped ZnO thin films
Ann. Phys. 13, 57-58 (2004)

249
M. Lorenz, J. Lenzner, E.M. Kaidashev, H. Hochmuth, M. Grundmann
Cathodoluminescence of selected single ZnO nanowires on sapphire
Ann. Phys. 13, 39-40 (2004)

248
C. Bundesmann, M. Schubert, D. Spemann, A. Rahm, H. Hochmuth, M. Lorenz, M. Grundmann
Infrared dielectric function and phonon modes of Mg-rich cubic MgxZn1-xO (x > 0.67) thin films on sapphire (0001)
Appl. Phys. Lett. 85(6), 905-907 (2004)

247
H. von Wenckstern, E.M. Kaidashev, M. Lorenz, H. Hochmuth, G. Biehne, J. Lenzner, V. Gottschalch, R. Pickenhain, M. Grundmann
Lateral homogeneity of Schottky contacts on n-type ZnO
Appl. Phys. Lett. 84(1), 79-81 (2004)

246
Thomas Nobis, Evgeni M. Kaidashev, Andreas Rahm, Michael Lorenz, Jörg Lenzner, Marius Grundmann
Spatially inhomogeneous impurity distribution in ZnO micropillars
Nano Lett. 4, 797-800 (2004)

245
Karsten Goede, Peter Busch, Marius Grundmann
Binding specificity of a peptide on semiconductor surfaces
Nano Lett. 4, 2115-2120 (2004)

244
D. Fritsch, H. Schmidt, M. Grundmann
Band dispersion relations of zinc-blende and wurtzite InN
Phys. Rev. B 69(16), 165204:1-5 (2004)

243
Thomas Nobis, Evgeni M. Kaidashev, Andreas Rahm, Michael Lorenz, Marius Grundmann
Whispering gallery modes in nano-sized dielectric resonators with hexagonal cross section
Phys. Rev. Lett. 93(10), 103903:1-4 (2004)

242
R. Schmidt-Grund, M. Schubert, B. Rheinländer, D. Fritsch, H. Schmidt, E.M. Kaidashev, M. Lorenz, H. Hochmuth, M. Grundmann
UV-VUV Spectroscopic ellipsometry of ternary MgxZn1-xO (0 ≤ x ≤ 0.53) thin films
Thin Solid Films 455-456, 500-504 (2004)

241
C. Bundesmann, N. Ashkenov, M. Schubert, A. Rahm, E. M. Kaidashev, M. Lorenz, M. Grundmann
Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry
Thin Solid Films 455-456, 161-166 (2004)

240
Report of The Physics Institutes of Universität Leipzig 2003
Universität Leipzig, M. Grundmann, ed.

239
M. Grundmann
Nanoscroll formation from strained layer heterostructures
Appl. Phys. Lett. 83(12), 2444-2446 (2003)

238
C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, E.M. Kaidashev, M. Lorenz, M. Grundmann
Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga and Li
Appl. Phys. Lett. 83(10), 1974-1976 (2003)

237
E. M. Kaidashev, M. Lorenz, H. von Wenckstern, J. Lenzner, G. Benndorf, A. Rahm, H.-C. Semmelhack, K.-H. Han, H. Hochmuth, C. Bundesmann, V. Riede, M. Grundmann
High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition
Appl. Phys. Lett. 82(22), 3901-3903 (2003)

236
R. Schmidt, B. Rheinländer, M. Schubert, D. Spemann, T. Butz, J. Lenzner, E.M. Kaidashev, M. Lorenz, M. Grundmann
Dielectric functions (1 to 5 eV) of wurtzite MgxZn1-xO (0 ≤ x < 0.29) thin films
Appl. Phys. Lett. 82(14), 2260-2262 (2003)

235
L.E. Vorobjev, S.N. Danilov, V.Yu. Panevin, N.K. Fedosov, D.A. Firsov, V.A. Shalygin, A.D. Andreev, N.N. Ledentsov, V.M. Ustinov, G.E. Cirlin, V.A. Egorov, A. Tonkikh, F.Fossard, A.Helman, Kh.Moumanis, F.H.Julien, A. Weber, M. Grundmann
Interband and intraband light absorption in InAs/GaAs quantum dots covered by InGaAs quantum wells
Proc. 26th Int. Conf. on the Physics of Semiconductors (ICPS-26), (Edinburgh, UK, 2002), IoP Conf. Ser. 171, P228:1-7 (2003), J.H. Davies, A.R. Long, eds. (IoP Publishing, Bristol), ISBN 978-0-7503-0924-0

234
R. Schmidt, C. Bundesmann, N. Ashkenov, B. Rheinländer, M. Schubert, M. Lorenz, E. M. Kaidashev, D. Spemann, T. Butz, J. Lenzner, M. Grundmann
Optical properties of ternary MgZnO thin films
Proc. 26th Int. Conf. on the Physics of Semiconductors (ICPS-26), (Edinburgh, UK, 2002), IoP Conf. Ser. 171, P11:1-8 (2003), J.H. Davies, A.R. Long, eds. (IoP Publishing, Bristol), ISBN 978-0-7503-0924-0

233
H. von Wenckstern, H. Schmidt, R. Pickenhain, M. Grundmann
Conduction band offset of pseudomorphic InAs/GaAs determined by capacitance spectroscopy
Proc. 26th Int. Conf. on the Physics of Semiconductors (ICPS-26), (Edinburgh, UK, 2002), IoP Conf. Ser. 171, H2:1-7 (2003), J.H. Davies, A.R. Long, eds. (IoP Publishing, Bristol), ISBN 978-0-7503-0924-0

232
N. Ashkenov, G. Wagner, H. Neumann, B. N. Mbenkum, C. Bundesmann, V. Riede, M. Lorenz, E. M. Kaidashev, A. Kasic, M. Schubert, M. Grundmann
Infrared dielectric functions and phonon modes of high-quality ZnO films
J. Appl. Phys. 93(1), 126-133 (2003)

231
Daniel Fritsch, Heidemarie Schmidt, Marius Grundmann
Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN
Phys. Rev. B 67(23), 235205:1-13 (2003)

230
M. Lorenz, E. M. Kaidashev, H. von Wenckstern, V. Riede, C. Bundesmann, D. Spemann, G. Benndorf, H. Hochmuth, A. Rahm, H.-C. Semmelhack, M. Grundmann
Optical and electrical properties of epitaxial (Mg,Cd)xZn1-xO, ZnO, and ZnO:(Ga,Al) thin films on c-plane sapphire grown by pulsed laser deposition
Sol. St. Electr. 47, 2205-2209 (2003)

229
M. Lorenz, H. Hochmuth, M. Schallner, R. Heidinger, D. Spemann, M. Grundmann
Dielectric properties of Fe-doped BaxSr1-xTiO3 thin films on polycrystalline substrates at temperatures between
Sol. St. Electr. 47, 2199-2203 (2003)

228
M. Lorenz, H. Hochmuth, M. Grundmann, E. Gaganidze, J. Halbritter
Microwave properties of epitaxial large-area Ca-doped YBa2Cu3O7-δ thin films on r-plane sapphire
Sol. St. Electr. 47, 2183-2186 (2003)

227
Report of The Physics Institutes of Universität Leipzig 2002
Universität Leipzig, M. Grundmann, ed.

226
M. Grundmann, R. Heitz, D. Bimberg
Comment on "Problems in recent analysis of injected carrier dynamics in semiconductor quantum dots" [Appl. Phys. Lett. 79, 3912 (2001)]
Appl. Phys. Lett. 81(3), 565 (1 page) (2002)

225
C. Bundesmann, M. Schubert, D. Spemann, T. Butz, M. Lorenz, E. M. Kaidashev, M. Grundmann, N. Ashkenov, H. Neumann, G. Wagner
Infrared dielectric functions and phonon modes of wurtzite MgxZn1-xO (x≤0.2)
Appl. Phys. Lett. 81(13), 2376-2378 (2002)

224
M. Grundmann, N.N. Ledentsov, F. Hopfer, F. Heinrichsdorff, F. Guffarth, D. Bimberg, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Yu.G. Musikhin, Zh.I. Alferov, J.A. Lott, N.D. Zhakarov, P. Werner
Long Wavelength Quantum Dot Lasers
J. Mat. Sci: Mat. Electr. 13, 643-647 (2002)

223
T. Hofmann, M. Grundmann, C.M. Herzinger, M. Schubert, W. Grill
Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures
Proc. Mat. Res. Soc. 744, 277-282 (2002)

222
M. Lorenz, H. Hochmuth, D. Natusch, M. Grundmann
High-quality reproducible PLD Y-Ba-Cu-O: Ag thin films up to 4 inch diameter for microwave applications
Physica C 372, 587-589 (2002)

221
L.E. Vorobjev, S.N. Danilov, A.V. Gluhovskoy, V.L. Zerova, E.A. Zibik, V.Y. Panevin, D.A. Firsov, V.A. Shalygin, A.D. Andreev, B.V. Volovik, A.E. Zhukov, N.N. Ledentsov, D.A. Livshits, V.M. Ustinov, Y.M. Shernyakov, A.F. Tsatsulnikov, A. Weber, M. Grundmann, S.R. Schmidt, A. Seilmeier, E. Towe, D. Pal
Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells
Izvestiya Akademii Nauk Seriya Fizicheskaya 66(2), 231-235 (2002)

220
L.E. Vorobjev, A.V. Glukhovskoy, S.N. Danilov, V.Yu. Panevin, D.A. Firsov, N.K. Fedosov, V.A. Shalygin, A.D. Andreev, B.V. Volovik, N.N. Ledentsov, D.A. Livshits, V.M. Ustinov, A.F. Tsatsulnikov, Yu.M. Shernyakov, M. Grundmann, A. Weber, F. Fossard, F.H. Julien
Nonequilibrium spectroscopy of inter- and intraband transitions in quantum dot structures
Mat. Sci. Forum 384-385, 39-42 (2002), S. Asmontas, A. Dargys, H.G. Roskos, eds.

219
E. Towe, D. Pal, L.E. Vorobjev, A.V. Glukhovskoy, S.N. Danilov, V.L. Zerova, V.Y. Panevin, D.A. Firsov, V.A. Shalygin, G.G. Zegrya, A. Weber, M. Grundmann
Injection lasers based on intraband carrier transitions
Mat. Sci. Forum 384-385, 209-212 (2002), S. Asmontas, A. Dargys, H.G. Roskos, eds.

218
M. Grundmann
Theory of Quantum Dot Lasers
Nano-Optoelectronics, Concepts, Physics and Devices, p. 299-316 (2002), M. Grundmann, ed. (Springer, Berlin, 2002), ISBN 978-3-642-56149-8

217
M. Grundmann, ed.
Nano-Optoelectronics, Concepts, Physics and Devices (Springer, Berlin, 2002), ISBN 978-3-642-56149-8

216
Report of The Institute for Experimental Physics II of Universität Leipzig 2001
Universität Leipzig, M. Grundmann, ed.

215
D. Bimberg, M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, Ch. Ribbat, R. Sellin, Zh.I. Alferov, P.S. Kop'ev, M.V. Maximov, V.M. Ustinov, A.E. Zhukov, J.A. Lott
Quantum dot lasers: Theory and experiment
AIP Conf. Proc. 560, 178-197 (2001) (AIP Publishing LLC, New York)

214
R. Sellin, Ch. Ribbat, M. Grundmann, N.N. Ledentsov, D. Bimberg
Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
Appl. Phys. Lett. 78, 1207-1209 (2001)

213
A. Weber, M. Grundmann, N.N. Ledentsov
Comment on "Room-Temperature Long-Wavelength (λ=13.3 μm) unipolar quantum dot intersubband laser
Electr. Lett. 37, 96-97 (2001)

212
Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg, N.A. Sobolev, M.C. Carmo
Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation
Electr. Lett. 37, 174-175 (2001)

211
O. Stier, A. Schliwa, R. Heitz, M. Grundmann, D. Bimberg
Biexciton binding energy in InAs/GaAs quantum dots
Proc. 25th Int. Conf. on The Physics of Semiconductors (ICPS-25), (Osaka, Japan, 2000), Springer Proc. Physics 87(II), 1265:1-2 (2001) (Springer, Berlin), N. Miura, T. Ando, eds., ISBN 978-3-540-41778-1

210
A. Weber, K. Goede, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov
Electrically and optically pumped mid-infrared emission from quantum dots
Proc. 25th Int. Conf. on The Physics of Semiconductors (ICPS-25), (Osaka, Japan, 2000), Springer Proc. Physics 87(II), 1157:1-2 (2001) (Springer, Berlin), N. Miura, T. Ando, eds., ISBN 978-3-540-41778-1

209
L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, D. Bimberg
Effect of excited-state transitions on the threshold characteristics of a quantum dot laser
IEEE J. Quantum Electron. 37, 418-425 (2001)

208
L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, D. Bimberg
Maximum modal gain of a self-assembled InAs/GaAs quantum dot laser
J. Appl. Phys. 90(3), 1666-1668 (2001)

207
L.E. Vorobjev, S.N. Danilov, A.V. Glukhovskoy, V.L. Zerova, E.A. Zibik, V.Yu. Panevin, D.A. Firsov, V.A. Shalygin, A.D. Andreev, B.V. Volovik, A.E. Zhukov, N.N. Ledentsov, D.A. Livshits, V.M. Ustinov, Yu.M. Shernyakov, A.F. Tsatsulnikov, A. Weber, M. Grundmann, S.R. Schmidt, A. Seilmeier, E. Towe, D. Pal
Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells
Nanotechnology 12, 462-465 (2001)

206
V.A. Shalygin, L.E. Vorobjev, A.V. Glukhovskoy, S.N. Danilov, V.Yu. Panevin, D.A. Firsov, B.V. Volovik, N.N. Ledentsov, D.A. Livshits, V.M. Ustinov, Yu.M. Shernyakov, A.F. Tsatsulnikov, A. Weber, M. Grundmann
Near and mid infrared spectroscopy of InGaAs/GaAs quantum dot structures
Nanotechnology 12, 447-449 (2001)

205
K. Goede, A. Weber, F. Guffarth, C.M.A. Kapteyn, F. Heinrichsdorff, R. Heitz, D. Bimberg, M. Grundmann
Calorimetric investigation of intersublevel transitions in charged quantum dots
Phys. Rev. B 64(24), 245317:1-7 (2001)

204
N.A. Sobolev, A. Cavaco, M.C. Carmo, M. Grundmann, F. Heinrichsdorff, D. Bimberg
Enhanced radiation hardness of InAs/GaAs quantum dot structures
Phys. Status Solidi B 224, 93-96 (2001)

203
A. Weber, K. Goede, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov
Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots
Phys. Status Solidi B 224, 833-837 (2001)

202
S. Bognár, M. Grundmann, D. Ouyang, R. Heitz, R. Sellin, D. Bimberg
Large gain in InAs/GaAs quantum dots
Phys. Status Solidi B 224, 823-826 (2001)

201
Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg
High power quantum dot lasers at 1160 nm
Phys. Status Solidi B 224, 819-822 (2001)

200
D. Bimberg, M. Grundmann, N.N. Ledentsov, M.H. Mao, Ch. Ribbat, R. Sellin, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, J.A. Lott
Novel infrared quantum dot lasers: Theory and reality
Phys. Status Solidi B 224, 787-796 (2001)

199
A. Schliwa, O. Stier, R. Heitz, M. Grundmann, D. Bimberg
Exciton level crossing in coupled InAs/GaAs quantum dot pairs
Phys. Status Solidi B 224, 405-408 (2001)

198
O. Stier, A. Schliwa, R. Heitz, M. Grundmann, D. Bimberg
Stability of biexcitons in pyramidal InAs/GaAs quantum dots
Phys. Status Solidi B 224, 115-118 (2001)

197
M. Grundmann, A. Weber, K. Goede, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov
Mid-infrared properties of quantum dot lasers
Proc. SPIE 4598, 44-57 (2001)

196
M. Grundmann, D. Bimberg
Nanotechnologische Entwicklungen - Konvergenz mit den IuK Technologien
Jahrbuch Telekommunikation und Gesellschaft 2001 "Internet@Future: Technik, Anwendungen und Dienste der Zukunft" 9, 68 (2001) (H, Heidelberg, 2001)

195
M. Grundmann
Feasibility of 5 Gbit/s wavelength division multiplexing using quantum dot lasers
Appl. Phys. Lett. 77, 4265-4267 (2000)

194
M. Grundmann, A. Weber, K. Goede, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov
Mid-infrared emission from near-infrared quantum-dot lasers
Appl. Phys. Lett. 77, 4-6 (2000)

193
M. Grundmann
How a quantum dot laser turns on
Appl. Phys. Lett. 77, 1428-1430 (2000)

192
F. Heinrichsdorff, Ch. Ribbat, M. Grundmann, D. Bimberg
High power quantum dot lasers at 1100 nm
Appl. Phys. Lett. 76, 556-558 (2000)

191
M. Grundmann, N.N. Ledentsov, F. Hopfer, F. Heinrichsdorff, F. Guffarth, D. Bimberg, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Yu.G. Musikhin, Zh.I. Alferov, J.A. Lott, N.D. Zhakharov, P. Werner
Quantum dots for GaAs-based surface emitting lasers at 1300 nm
Adv. Sol. St. Phys. 40, 589-597 (2000), B. Kramer, ed.

190
P. Werner, K. Scheerschmidt, N.D. Zacharov, R. Hillebrand, M. Grundmann, R. Schneider
Quantum Dot Structures in the InGaAs System Investigated by TEM Techniques
Cryst. Res. Technol. 35, 759-768 (2000)

189
M. Grundmann
Relaxation oscillations of quantum dot lasers
Electr. Lett. 36, 1851-1852 (2000)

188
N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, M.V. Maximov, Zh.I. Alferov, J.A. Lott
Quantum-dot heterostructure lasers
IEEE J. Sel. Top. Quantum Electr. 6, 439-451 (2000)

187
R. Sellin, F. Heinrichsdorff, C. Ribbat, M. Grundmann, U.W. Pohl, D. Bimberg
Surface flattening during MOCVD of thin GaAs layers covering InGaAs quantum dots
J. Cryst. Growth 221, 581-585 (2000)

186
M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, C. Ribbat, D. Bimberg, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Y.M. Shernyakov, D.A. Lifshits, V.M. Ustinov, Zh.I. Alferov
Progress in quantum dot lasers: 1100 nm, 1300 nm and high power applications
Jpn. J. Appl. Phys. 39(4B), 2341-2343 (2000)

185
R. Heitz, F. Guffarth, I. Mukhametzhanov, M. Grundmann, A. Madhukar, D. Bimberg
Many-body effects on the optical spectra of InAs/GaAs quantum dots
Phys. Rev. B 62(24), 16881-16885 (2000)

184
E. Martinet, M.-A. Dupertuis, F. Reinhardt, G. Biasiol, E. Kapon, O. Stier, M. Grundmann, D.Bimberg
Separation of strain and quantum-confinement effects in the optical spectra of quantum wires
Phys. Rev. B 61(7), 4488-4491 (2000)

183
M. Grundmann, O. Stier, A. Schliwa, D. Bimberg
Electronic structure of cleaved-edge-overgrowth strain-induced quantum wires
Phys. Rev. B 61(3), 1744-1747 (2000)

182
M. Grundmann, O. Stier, S. Bognár, C. Ribbat, F. Heinrichsdorff, D. Bimberg
Optical properties of self-organized quantum dots: Modeling and Experiments
Phys. Status Solidi A 178, 255-262 (2000)

181
M. Grundmann, A. Krost
Atomic structure based simulation of X-ray scattering
Phys. Status Solidi B 218, 417-423 (2000)

180
Levon V. Asryan, Marius Grundmann, Nikolai N. Ledentsov, Oliver Stier, Robert A. Suris, Dieter Bimberg
Effect of excited-state transitions on the threshold characteristics of a quantum dot laser
Proc. SPIE 3944, 823-834 (2000)

179
D. Bimberg, M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Y.M. Shernyakov, B.V. Volovik, A.F. Tsatsulnikov, P.S. Kop'ev, Zh.I. Alferov
Quantum dot lasers: breakthrough in optoelectronics
Thin Solid Films 367, 235-249 (2000)

178
D. Bimberg, N.N. Ledentsov, R. Sellin, Ch. Ribbat, M. Mao, M. Grundmann, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, Zh.I. Alferov, J.A. Lott
Quantum dot lasers
13th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS), p. 302-303 (2000)

177
M. Grundmann
Rechnet mit den Quanten!
7 hügel - Bilder und Zeichen des 21. Jahrhunderts VI, 74-78 (2000), G. Sievernich, H. Budde, eds. (Henschel, Berlin, 2000)

176
Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg
High power quantum dot lasers at 1140 nm
IEEE 17th Int. Semiconductor Laser Conference, Conference Digest, p. 131-132 (2000)

175
M. Strassburg, O. Schulz, U.W. Pohl, M. Grundmann, D. Bimberg, S. Itoh, K. Makano, A. Ishibashi, M. Klude, D. Hommel
Index Guided II-VI Lasers with Low Threshold Current Density
Technical Program with Abstracts of the 42nd Electronic Materials Conference (Denver, CO, 2000), p. 81 (2000)

174
M. Grundmann
Quantum dot based semiconductor laser diodes
Technical Program with Abstracts of the 42nd Electronic Materials Conference (Denver, CO, 2000), p. 14 (2000)

173
M. Grundmann, F. Heinrichsdorff, Ch. Ribbat, M.-H. Mao, D. Bimberg
Quantum dot lasers: Recent progress in theoretical understanding and demonstration of high output power operation
Appl. Phys. B 69, 413-416 (1999)

172
M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg
Diode Lasers Based on Quantum Dots
Adv. Sol. St. Phys. 38, 203-214 (1999), B. Kramer, ed.

171
R. Heitz, I. Mukhametzanov, H. Born, M. Grundmann, A. Hoffmann, A. Madhukar, D. Bimberg
Hot carrier relaxation in InAs/GaAs quantum dots
Physica B 272, 8-11 (1999)

170
C.M.A. Kapteyn, M. Lion, F. Heinrichsdorff, R. Heitz, M. Grundmann, D. Bimberg
Carrier emission processes in InAs quantum dots
Physica E 7, 388-392 (1999)

169
M. Grundmann
The present status of quantum dot lasers
Physica E 5, 167-184 (1999)

168
C.M.A. Kapteyn, F. Heinrichsdorff, O. Stier, R. Heitz, M. Grundmann, N.D. Zakharov, D. Bimberg
Electron escape from InAs quantum dots
Phys. Rev. B 60(20), 14265-14268 (1999)

167
O. Stier, M. Grundmann, D. Bimberg
Electronic and optical properties of strained quantum dots modeled by 8-band k
Phys. Rev. B 59(8), 5688-5701 (1999)

166
M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, C. Ribbat, D. Bimberg, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, Zh.I. Alferov
Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications
Extended Abstracts of the 1999 Int. Conf. on Solid State Devices and Materials (ssdm 99, Tokyo), p. 412-413 (1999)

165
A. Weber, K. Goede, M. Grundmann, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov
Spontaneous mid-infrared emission from quantum dot lasers
Proc. 3rd Conf. on Mid-infrared Optical Materials and Devices (MIOMD-3) (Aachen, Germany, 1999), p. O15:1-2 (1999)

164
M. Grundmann, Ch. Ribbat, M.-H. Mao, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, A.Yu. Egorov, D.A. Lifshits, M.V. Maximov, Yu.M. Shernyakov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov
4 Watt high power quantum dot lasers
Technical Program with Abstracts of the 41st Electronic Materials Conference (Santa Barbara, CA, 1999), p. WED-AM 2 (1999)

163
D. Bimberg, M. Grundmann, N.N. Ledentsov
Quantum Dot Heterostructures
(John Wiley & Sons Ltd., Chichester, 1998), ISBN 978-0-471-97388-1

162
A.F. Tsatsul'nikov, A.Yu. Egorov, P.S. Kop'ev, A.R. Kovsh, N.N. Ledentsov, M.V. Maximov, A.A. Suvorova, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, M. Grundmann, D. Bimberg, Zh.I. Alferov
Optical properties of InAlAs quantum dots in an AlGaAs matrix
Appl. Surf. Sci. 123/124, 381-384 (1998)

161
V. Türck, F. Heinrichsdorff, M. Veit, R. Heitz, M. Grundmann, A. Krost, D. Bimberg
Correlation of InGaAs/GaAs quantum dot and wetting layer formation
Appl. Surf. Sci. 123/124, 352-355 (1998)

160
O. Stier, M. Grundmann, D. Bimberg
Inter- and intraband transitions in strained quantum dots modeled in eight-band k
Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998), p. VII B70:1-4 (1998) (World Scientific, Singapore), D. Gershoni, ed.

159
E. Martinet, O. Stier, M. Grundmann, M.A. Dupertuis, A. Gustafsson, A. Rudra, F. Reinhardt, E. Kapon
Separation of strain and confinement effects in the photoluminescence excitation spectra of InGaAs/AlGaAs V-groove quantum wires
Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998), p. VII B44:1-4 (1998) (World Scientific, Singapore), D. Gershoni, ed.

158
M. Grundmann, R. Heitz, D. Bimberg, J.H.H. Sandmann, J. Feldmann
Modeling of Quantum Dot Optical Properties using Microstates
Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998), p. VII B3:1-4 (1998) (World Scientific, Singapore), D. Gershoni, ed.

157
V.P. Kalosha, G.Ya. Slepyan, S.A. Maksimenko, O. Stier, M. Grundmann, N.N. Ledentsov, D. Bimberg
Effective-medium approach for active medium quantum dot laser
Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998), p. VII B29:1-4 (1998) (World Scientific, Singapore), D. Gershoni, ed.

156
C.M.A. Kapteyn, F. Heinrichsdorff, O. Stier, M. Grundmann, D. Bimberg
Electron emission from InAs quantum dots
Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998), p. VII A3:1-4 (1998) (World Scientific, Singapore), D. Gershoni, ed.

155
A.F. Tsatsul'nikov, G.E. Cirlin, A.Yu. Egorov, A.O. Golubok, P.S. Kop'ev, A.R. Kovsh, N.N. Ledentsov, S.A. Masalov, M.V. Maximov, V.N. Petrov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, R. Heitz, P. Werner, M. Grundmann, D. Bimberg, Zh.I. Alferov
Formation of InAs quantum dots on a silicon (100) surface
Proc. 24th Int. Conf. on The Physics of Semiconductors (ICPS-24), (Jerusalem, Israel, 1998), p. II E18:1-4 (1998) (World Scientific, Singapore), D. Gershoni, ed.

154
F. Heinrichsdorff, M. Grundmann, O. Stier, A. Krost, D. Bimberg
Influence of In/Ga intermixing on the optical properties of InGaAs/GaAs quantum dots
J. Cryst. Growth 195, 540-545 (1998)

153
J. Rockenberger, L. Tröger, A.L. Rogach, M. Tischer, M. Grundmann, A. Eychmüller, H. Weller
The Contribution of Particle Core and Surface to Strain, Disorder and Vibrations in Thiolcapped CdTe Nanocrystals
J. Chem. Phys. 108, 7807-7815 (1998)

152
A.F. Tsatsul'nikov, S.V. Ivanov, P.S. Kop'ev, A.K. Kryganovskii, N.N. Ledentsov, M.V. Maximov, B.Ya. Mel'tser, P.V. Nekludov, A.A. Suvorova, A.N. Titkov, B.V. Volovik, M. Grundmann, D.Bimberg, Zh.I. Alferov
Formation of InSb quantum dots in a GaSb matrix
J. Electr. Mat. 27, 414-417 (1998)

151
H. Nakashima, T. Kato, K. Maehashi, T. Nishida, Y. Inoue, T. Yoshiji, T. Takeuchi, K. Inoue, P. Fischer, J. Christen, M. Grundmann, D. Bimberg
Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE
Mat. Sci. Engin. B 51, 229-232 (1998)

150
D. Bimberg, M. Grundmann, N.N. Ledentsov
Growth, spectroscopy and laser application of self-ordered III-V quantum dots
MRS Bull. 2(3), 31-34 (1998)

149
D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, M.V. Maximov, Zh.I. Alferov, J.A. Lott
Application of self-organized quantum dots to edge emitting and vertical cavity lasers
Physica E 3, 129-136 (1998)

148
M. Grundmann, O. Stier, D. Bimberg
Electronic states in strained cleaved edge overgrowth quantum wires and quantum dots
Phys. Rev. B 58(16), 10557-10561 (1998)

147
R. Heitz, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, A. Hoffmann, A. Madhukar, D. Bimberg
Excited states and energy relaxation in stacked InAs/GaAs quantum dots
Phys. Rev. B 57(15), 9050-9060 (1998)

146
F. Hatami, M. Grundmann, N.N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, S.V. Ivanov, B.Ya. Meltser, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov
Carrier Dynamics in Type-II GaSb/GaAs Quantum Dots
Phys. Rev. B 57(8), 4635-4641 (1998)

145
D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J. Lott
Edge and vertical cavity surface emitting InAs quantum dot lasers
Sol. St. Electr. 42, 1433-1437 (1998)

144
G.E. Cirlin, V.G. Dubrovskii, V.N. Petrov, N.K. Polyakov, N.P. Korneeva, V.N. Demidov, A.O. Golubok, S.A. Masalov, D.V. Kurochkin, O.M. Gorbenko, N.I. Komyak, V.M. Ustinov, A.Yu. Egorov, A.R. Kovsh, M.V. Maximov, A.F. Tsatsul'nikov, B.V. Volovik, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, M. Grundmann, D. Bimberg
Formation of InAs quantum dots on silicon (100) surface
Semic. Sci. Technol. 13(11), 1262-1265 (1998)

143
M. Grundmann, N.N. Ledentsov, N. Kirstaedter, F. Heinrichsdorff, A. Krost, D. Bimberg, A.O. Kosogov, S.S. Ruvimov, P. Werner, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov
Semiconductor Quantum Dots for Application in Diode Lasers
Thin Solid Films 318, 83-87 (1998)

142
J. Rockenberger, L. Tröger, A.L. Rogach, M. Tischer, M. Grundmann, H. Weller, A. Eychmüller
An EXAFS study on thiolcapped CdTe nanocrystals
Ber. Bunsenges. Phys. Chem. 102, 1561-1564 (1998)

141
D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff
Competitive Vertical Cavity and Edge Emitting Quantum Dot Lasers
Conf. on Lasers and Electro-Optics Europe (CLEO/Europe), p. 63 (1998)

140
M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg
Neuartige Halbleiterlaser auf der Basis von Quantenpunkten
Laser und Optoelektronik 30, 70-77 (1998)

139
A.F. Tsatsul'nikov, S.V Ivanov, P.S. Kop'ev, I.L. Krestnikov, A.K. Kryganovskii, N.N. Ledentsov, M.V. Maximov, B.Ya. Mel'tser, P.V. Nekludov, A.A. Suvorova, A.N. Titkov, B.V. Volovik, M. Grundmann, D. Bimberg, Zh.I. Alferov
Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy
Microelectr. Engin. 43-44, 85-90 (1998)

138
A.F. Tsatsul'nikov, M.V. Belousov, N.A. Bert, A.Yu. Egorov, P.S. Kop'ev, A.R. Kovsh, I.L. Krestnikov, N.N. Ledentsov, M.V. Maximov, A.A. Suvorova, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, M. Grundmann, D. Bimberg, Zh.I. Alferov
Lateral association of vertically-coupled quantum dots
Microelectr. Engin. 43, 37-43 (1998)

137
M. Grundmann, R. Heitz, D. Bimberg
Carrier statistics in quantum-dot lasers
Physics of the Solid State 40(5), 772-774 (1998)

136
L. Finger, M. Nishioka, R. Hogg, F. Heinrichsdorff, M. Grundmann, D. Bimberg, Y. Arakawa
Modification of energy relaxation of InGaAs quantum dots by post growth annealing
Proc. 10th Int. Conf. on Indium Phosphide an Related Materials (IPRM'98), IEEE Catalog #98CH36129, p. 151-154 (1998)

135
M. Grundmann, N.N. Ledentsov, F. Heinrichsdorff, M.-H. Mao, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott
InAs/GaAs Quantum Dot Injection Lasers
Trends in Optics and Photonics Series 18, 34-38 (1998) (The Optical Society of America, Washington, D.C., 1998)

134
A.A. Darhuber, V. Holy, J. Stangl, G. Bauer, A. Krost, F. Heinrichsdorff, M. Grundmann, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, A.O. Kosogov, P. Werner
Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution X-ray diffraction
Appl. Phys. Lett. 70, 955-957 (1997)

133
M. Kappelt, V. Türck, M. Grundmann, H. Cerva, D. Bimberg
Low pressure metal-organic chemical vapor deposition of InP/InAlAs/InGaAs quantum wires
J. Cryst. Growth 170, 590-594 (1997)

132
F. Heinrichsdorff, A. Krost, M. Grundmann, D. Bimberg, F. Bertram, J. Christen, A. Kosogov, P. Werner
Self Organization Phenomena of InGaAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
J. Cryst. Growth 170, 568-573 (1997)

131
M. Grundmann, D. Bimberg
Gain and Threshold of Quantum Dot Lasers: Theory and Comparison with Experiments
Jpn. J. Appl. Phys. 36(6B), 4181-4187 (1997)

130
F. Heinrichsdorff, A. Krost, N. Kirstaedter, M.-H. Mao, M. Grundmann, D. Bimberg, A.O. Kosogov, P. Werner
InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
Jpn. J. Appl. Phys. 36(6B), 4129-4133 (1997)

129
A.A. Darhuber, V. Holy, J. Stangl, G. Bauer, A. Krost, M. Grundmann, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, A.O. Kosogov, P. Werner
High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots
Jpn. J. Appl. Phys. 36(6B), 4084-4087 (1997)

128
D. Bimberg, N.N. Ledentsov, M. Grundmann, R. Heitz, J. Böhrer, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov
Luminescence properties of semiconductor quantum dots
J. Lumin. 72-74, 34-37 (1997)

127
N.N. Ledentsov, N. Kirstaedter, M. Grundmann, D. Bimberg, V.M. Ustinov, I.V. Kochnev, P.S. Kop'ev, Zh.I. Alferov
Three-dimensional arrays of self-ordered quantum dots for laser applications
Microelectr. J. 28, 915-931 (1997)

126
M. Grundmann, D. Bimberg
Selbstordnende Quantenpunkte: Vom Festk
Physikal. Bl. 53(6), 517-522 (1997)

125
M. Grundmann, R. Heitz, D. Bimberg
New approach to modeling carrier distribution in quantum dot ensembles: Gain and threshold of QD lasers and impact of phonon bottleneck
Physica E 2, 725-728 (1997)

124
R. Heitz, M. Veit, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, N.N. Ledentsov, A. Hoffmann, A. Madhukar, D. Bimberg, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov
Hot Carrier Relaxation in InAs/GaAs Quantum Dots
Physica E 2, 578-582 (1997)

123
M. Grundmann, D. Bimberg
Theory of random population for quantum dots
Phys. Rev. B 55(15), 9740-9745 (1997)

122
V. Türck, O. Stier, F. Heinrichsdorff, M. Grundmann, D. Bimberg
Quantum wires in staggered band line-up single heterostructures with corrugated interfaces
Phys. Rev. B 55(12), 7733-7742 (1997)

121
M. Grundmann, D. Bimberg
Formation of quantum dots in twofold cleaved edge overgrowth
Phys. Rev. B 55(7), 4054-4056 (1997)

120
M. Grundmann, D. Bimberg
Theory of quantum dot laser gain and threshold: Correlated versus uncorrelated electron and hole capture
Phys. Status Solidi A 164, 297-300 (1997)

119
M. Grundmann, R. Heitz, D. Bimberg, J.H.H. Sandmann, J. Feldmann
Carrier Dynamics in Quantum Dots: Modeling with Master Equations for the Transitions between Micro-states
Phys. Status Solidi B 203, 121-132 (1997)

118
M. Takeuchi, T. Takeuchi, Y. Inoue, T. Kato, K. Inoue, H. Nakashima, K. Maehashi, P. Fischer, J. Christen, M. Grundmann, D. Bimberg
Uniform GaAs quantum wires formed on vicinal GaAs(110) surfaces by two-step MBE growth
Superlatt. Microstr. 22(1), 43-49 (1997)

117
A.A. Darhuber, J. Stangl, V. Holy, G. Bauer, A. Krost, M. Grundmann, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, A.O. Kosogov, P. Werner
Structural Characterization of Self-assembled Quantum Dot structures by X-ray Diffraction Technique
Thin Solid Films 306, 198-204 (1997)

116
D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott
Edge and surface emitting quantum dot lasers
Int. Electron Devices Meeting 1997 (IEDM-97), Technical Digest, IEEE Catalog #97CH36103, p. 381 (1997)

115
V.A. Shchukin, N.N. Ledentsov, M. Grundmann, D. Bimberg
Self-Ordering of Nanostructures on Semiconductor Surfaces
NATO ASI Series, Series E: Applied Sciences 344, 257 (1997), G. Abstreiter, A. Aydinli, J.-P. Leburton, eds. (Kluwer, Dordrecht, 1997), ISBN 978-0-7923-4728-6

114
R. Heitz, M. Veit, M. Grundmann, N.N. Ledentsov, A. Hoffmann, D. Bimberg, A. Kalburge, Q. Xie, P. Chen, A. Madhukar, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov
Carrier capture and relaxation processes in InAs/GaAs quantum dots
Phys. Low-Dim. Struct. 11/12, 1 (1997)

113
P. Fischer, J. Christen, M. Takeuchi, H. Nakashima, K. Maehashi, K. Inoue, G. Austing, M. Grundmann, D. Bimberg
Luminescence characterization of selforganized GaAs quantum wires: carrier capture and thermalization
Proc. 4th Int. Symp. on Quantum Confinement, PV 97-11, ISBN 1-56677-138-2, p. 366 (1997) (The Electrochemical Society, Pennington, 1997)

112
D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kopev, Zh.I. Alferov, J.A. Lott
Fabry-Perot and vertical cavity surface emitting InAs quantum dot lasers
Proc. IEEE 24th Int. Symp. on Compound Semiconductors, p. 547-552 (1997)

111
M. Kappelt, M. Grundmann, A. Krost, V. Türck, D. Bimberg
InGaAs quantum wires grown by low pressure metal-organic chemical vapor deposition on InP V-grooves
Appl. Phys. Lett. 68, 3596-3598 (1996)

110
F. Heinrichsdorff, M. Grundmann, A. Krost, D. Bimberg, A. Kosogov, P. Werner
Self-organization processes in InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. 68, 3284-3286 (1996)

109
M. Herrscher, M. Grundmann, E. Dröge, St. Kollakowski, E.H. Böttcher, D. Bimberg
Epitaxial liftoff InGaAs/InP MSM photodetectors on Si
Electr. Lett. 31, 1383-1384 (1996)

108
M. Lowisch, M. Rabe, N. Hoffmann, R. Mitdank, B. Stegemann, F. Henneberger, M. Grundmann, V. Türck, D. Bimberg
Zero-dimensional excitons in (Zn,Cd)Se quantum structures
Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996), p. 1457-1460 (1996) (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds.

107
R. Heitz, A. Kalburge, Q. Xie, M. Veit, M. Grundmann, P. Chen, A. Madhukar, D. Bimberg
Energy relaxation in InAs/GaAs quantum dots
Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996), p. 1425-1428 (1996) (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds.

106
F. Heinrichsdorff, A. Krost, M. Grundmann, R. Heitz, D. Bimberg, A. Kosogov, P. Werner, F. Bertram, J. Christen
Kinetically and thermodynamically induced self-organization effects in the growth of quantum dots by MOCVD
Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996), p. 1321-1324 (1996) (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds.

105
A.A. Darhuber, J. Stangl, G. Bauer, A. Krost, F. Heinrichsdorff, M. Grundmann, D. Bimberg
Structural characterization of single and multiple layers of self-assembled InGaAs quantum dots by high resolution X-ray diffraction reflectivity
Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996), p. 1293-1296 (1996) (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds.

104
O. Stier, M. Grundmann, D. Bimberg
Eight-band k.p analysis of pseudomorphic quantum wires
Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996), p. 1177-1180 (1996) (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds.

103
L. Parthier, R. Rogaschewski, M. von Ortenberg, V. Rossin, F. Henneberger, M. Grundmann, D. Bimberg
In-situ growth and characterization of ZnSe quantum wires on patterned GaAs
Proc. 23rd Int. Conf. on the Physics of Semiconductors (ICPS-23), (Berlin, Germany, 1996), p. 1149-1152 (1996) (World Scientific, Singapore), M. Scheffler, R. Zimmermann, eds.

102
M. Kuttler, M. Grundmann, R. Heitz, U.W. Pohl, D. Bimberg, H. Stanzl, B. Hahn, W. Gebhardt
Diffusion induced disordering (DID) in ZnSSe/ZnSe superlattices
J. Cryst. Growth 159, 514-517 (1996)

101
D. Bimberg, N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O.G. Schmidt, M.H. Mao, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov, S.S. Ruvimov, U. Gösele, J. Heydenreich
InAs/GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization properties
Jpn. J. Appl. Phys. 35, 1311-1319 (1996)

100
X. Yang, L.J. Brillson, A.D. Raisanen, L. Vanzetti, A. Bonanni, A. Franciosi, M. Grundmann, D. Bimberg
Evolution of deep levels and internal photoemission with annealing temperature at ZnSe/GaAs interfaces
J. Vac. Sci. Technol. B 14, 2961-2966 (1996)

99
S. Ruvimov, Z. Liliental-Weber, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, P.S. Kop'ev, Zh.I. Alferov, K. Scheerschmidt, U. Gösele
TEM Structural Characterization of nm-Scale Islands in Highly Mismatched Systems
Proc. Mat. Res. Soc. 421, 383-388 (1996)

98
H. Nakashima, M. Takeuchi, K. Inoue, T. Takeuchi, Y. Inoue, P. Fischer, J. Christen, M. Grundmann, D. Bimberg
Size-dependent luminescence of GaAs quantum wires on vicinal GaAs (110) surfaces with giant steps formed by MBE
Physica B 227, 291-294 (1996)

97
M. Lowisch, M. Rabe, B. Stegemann, F. Henneberger, M. Grundmann, V. Türck, D. Bimberg
Zero-dimensional excitons in (Zn,Cd)Se quantum structures
Phys. Rev. B 54(16), R11074-R11077 (1996)

96
N.N. Ledentsov, V.A. Shchukin, M. Grundmann, N. Kirstaedter, J. Böhrer, O. Schmidt, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, S.V. Zaitsev, N.Yu. Gordeev, Zh.I. Alferov, A.I. Borovkov, A.O. Kosogov, S.S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich
Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
Phys. Rev. B 54(12), 8743-8750 (1996)

95
M. Grundmann, N.N. Ledentsov, O. Stier, J. Böhrer, D. Bimberg, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov
Nature of optical transitions in self-organized InAs/GaAs quantum dots
Phys. Rev. B 53(16), R10509-R10511 (1996)

94
N.N. Ledentsov, J. Böhrer, M. Beer, F. Heinrichsdorff, M. Grundmann, D. Bimberg, S.V. Ivanov, B.Ya. Meltser, I.N. Yassievich, N.A. Falev, P.S. Kop'ev, Zh.I. Alferov
Radiative states in type-II GaSb/GaAs quantum wells
Phys. Rev. B 52(19), 14058-14066 (1996)

93
D. Bimberg, N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O.G. Schmidt, M.H. Mao, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov, S.S. Ruvimov, U. Gösele, J. Heydenreich
InAs-GaAs Quantum Dots: From Growth to Lasers
Phys. Status Solidi B 194, 159-173 (1996)

92
M. Grundmann, R. Heitz, N. Ledentsov, O. Stier, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, S.S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich
Electronic Structure and Energy Relaxation in Strained InAs/GaAs Quantum Pyramids
Superlatt. Microstr. 19(2), 81-95 (1996)

91
R. Heitz, M. Grundmann, N.N. Ledentsov, L. Eckey, M. Veit, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop’ev, Zh.I. Alferov
Exciton relaxation in self-organized InAs/GaAs quantum dots
Surf. Sci. 361/362, 770-773 (1996)

90
G.E. Cirlin, G.M. Guryanov, V.N. Petrov, N.K. Polyakov, A.O. Golubok, S.Ya. Tipissev, V.B. Gubanov, Yu.B. Samsonenko, N.N. Ledentsov, V.A. Shchukin, M. Grundmann, D. Bimberg, Zh.I. Alferov
STM and RHEED study of InGaAs/GaAs quantum dots obtained by submonolayer epitaxial techniques
Surf. Sci. 352-354, 651-655 (1996)

89
G.E. Cirlin, G.M. Guryanov, A.O. Golubok, S.Ya. Tipissev, N.N. Ledentsov, V.A. Shchukin, M. Grundmann, D. Bimberg, Zh.I. Alferov
An intermediate (1.0-1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy
Surf. Sci. 352-354, 646-650 (1996)

88
V.A. Shchukin, N.N. Ledentsov, M. Grundmann, P.S. Kop’ev, D. Bimberg
Strain-induced formation and tuning of ordered nanostructures on crystal surfaces
Surf. Sci. 352-354, 117-122 (1996)

87
N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O. Schmidt, R. Heitz, J. Böhrer, D. Bimberg, V.M. Ustinov, V.A. Shchukin, A.Yu. Egorov, A.E. Zhukov, S. Zaitsev, P.S. Kop'ev, Zh.I. Alferov, S.S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich
Ordered Arrays of Quantum Dots: Formation, Electronic Spectra and Relaxation Phenomena
Sol. St. Electr. 40, 785-798 (1996)

86
H. Nakashima, M. Takeuchi, K. Kimura, M. Iwane, Hu Kun Huang, K. Inoue, J. Christen, M. Grundmann, D. Bimberg
Photo- and cathodoluminescence of AlGaAs single quantum wires on vicinal GaAs (110) surfaces
Sol. St. Electr. 40, 319-322 (1996)

85
M. Kappelt, V. Türck, M. Grundmann, H. Cerva, D. Bimberg
InP/InAlAs/InGaAs quantum wires
III-Vs Review 9(6), 32-38 (1996)

84
M. Grundmann, N.N. Ledentsov, R. Heitz, O. Stier, N. Kirstaedter, D. Bimberg, S. Ruvimov, A.O. Kosogov, P. Werner, J. Heydenreich, U. Gösele, V.M. Ustinov, M. Maximov, A.Yu. Egorov, P.S. Kop'ev, Zh.I. Alferov
InAs/GaAs Quantum Dots: Single Sheets, Stacked Dots and Vertically Coupled Dots
Proc. 3rd Int. Symp. on Quantum Confinement (ECS-188, Chicago, USA), PV 75-17 (The Electrochemical Society, Pennington, USA), p. 80-83 (1996)

83
N. Kirstaedter, O. Schmidt, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov, A.O. Kosogov, U. Gösele, J. Heydenreich
Static and dynamic properties of (InGa)As/GaAs quantum dot lasers
Proc. 8th Annual Meeting of IEEE Lasers and Electro-Optics Society (LEOS '95), IEEE Catalog #95CH35739, ISBN 0-7803-2450-1 1, 290-291 (1996)

82
M. Kappelt, V. Türck, M. Grundmann, H. Cerva, D. Bimberg
InP/InAlAs/InGaAs quantum wires
Proc. 8th Int. Conf. on Indium Phosphide an Related Materials (IPRM-8), IEEE Catalog #96CH35930, Library of Congress #96-75713, p. 757-760 (1996)

81
M. Grundmann, N.N. Ledentsov, R. Heitz, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov, A.O. Kosogov, P. Werner, J. Heydenreich, U. Gösele
Growth, Characterization, Theory and Lasing of Vertically Stacked Quantum Dots
Proc. 8th Int. Conf. on Indium Phosphide an Related Materials (IPRM-8), IEEE Catalog #96CH35930, Library of Congress #96-75713, p. 738-741 (1996)

80
M. Grundmann
Pseudomorphe Quantenpunkte
PTB-Bericht PTB-E-53 - Niederdimensionale Quantenstrukturen und Materialien für blaue Lichtquellen, p. 2-18 (1996), A. Schlachetzki, H. Bachmair, eds. (PTB, Braunschweig, 1996), ISBN 3-89429-782-4

79
D. Bimberg, M. Grundmann, N.N. Ledentsov
Quantenpunkt-Laser
Spektrum der Wissenschaft 11, 64-68 (1996)

78
M. Grundmann, N.N. Ledentsov, O. Stier, D. Bimberg, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov
Excited states in self-organized InAs/GaAs quantum dots: Theory and experiment
Appl. Phys. Lett. 68, 979-981 (1995)

77
R. Heitz, M. Grundmann, N.N. Ledentsov, L. Eckey, M. Veit, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov
Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots
Appl. Phys. Lett. 68, 361-363 (1995)

76
G.E. Cirlin, G.M. Guryanov, A.O. Golubok, S.Ya. Tipissev, N.N. Ledentsov, P.S. Kop'ev, M. Grundmann, D. Bimberg
Ordering Phenomena in InAs Strained Layer Morphological Transformation on GaAs (100) Surface
Appl. Phys. Lett. 67, 97-99 (1995)

75
F. Hatami, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, D. Bimberg, S.S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich
Radiative Recombination in Type-II GaSb/GaAs Quantum Dots
Appl. Phys. Lett. 67, 656-658 (1995)

74
V. Türck, O. Stier, F. Heinrichsdorff, M. Grundmann, D. Bimberg
Electron Quantum Wires in Type II Single Heterostructures on Nonplanar Substrates
Appl. Phys. Lett. 67, 1712-1714 (1995)

73
M. Grundmann
Pseudomorphic InAs/GaAs Quantum Dots on Low Index Planes
Adv. Sol. St. Phys. 35, 123-154 (1995)

72
N.N. Ledentsov, M. Grundmann, N. Kirstaedter, J. Christen, R. Heitz, J. Böhrer, F. Heinrichsdorff, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V.M. Ustinov, A.Yu. Egorov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov
Luminescence and Structural Properties of (In,Ga)As/GaAs Quantum Dots
Proc. 22nd Int. Conf. on the Physics of Semiconductors (ICPS-22), (Vancouver, Canada, 1994) 3, 1855-1858 (1995) (World Scientific, Singapore), D.J. Lockwood, ed.

71
J. Christen, M. Grundmann, M. Joschko, D. Bimberg, E. Kapon
Cooling of 1-dimensional Carriers via Inter- and Intrasubband Relaxation in GaAs Quantum Wires
Proc. 22nd Int. Conf. on the Physics of Semiconductors (ICPS-22), (Vancouver, Canada, 1994) 2, 1759-1762 (1995) (World Scientific, Singapore), D.J. Lockwood, ed.

70
M. Grundmann, J. Christen, M. Joschko, D. Bimberg, E. Kapon
Bandgap Renormalization in Quantum Wires
Proc. 22nd Int. Conf. on the Physics of Semiconductors (ICPS-22), (Vancouver, Canada, 1994) 2, 1675-1678 (1995) (World Scientific, Singapore), D.J. Lockwood, ed.

69
N.N. Ledentsov, J. Böhrer, M. Beer, M. Grundmann, F. Heinrichsdorff, D. Bimberg, S.V. Ivanov, B.Ya. Meltser, I.N. Yassievich, N.A. Faleev, P.S. Kop'ev, Zh.I. Alferov
Type-II Heterostructures based on GaSb Sheets in a GaAs Matrix
Proc. 22nd Int. Conf. on the Physics of Semiconductors (ICPS-22), (Vancouver, Canada, 1994) 2, 1616-1619 (1995) (World Scientific, Singapore), D.J. Lockwood, ed.

68
R.F. Schnabel, M. Grundmann, R. Engelhardt, J. Oertel, A. Krost, D. Bimberg, R. Opitz, M. Schmidbauer, R. Köhler
High Quantum Efficiency InP-Mesas Grown by Hybrid Epitaxy on Si Substrates
J. Cryst. Growth 156, 337-342 (1995)

67
R.F. Schnabel, A. Krost, M. Grundmann, D. Bimberg, H. Cerva
Maskless Selective Area Growth of InP on sub-
J. Electr. Mat. 24, 1625-1629 (1995)

66
H. Nakashima, M. Takeuchi, K. Sato, K. Shiba, H.K. Huang, K. Maehashi, K. Inoue, J. Christen, M. Grundmann, D. Bimberg
Formation of AlGaAs quantum wires on vicinal GaAs(110) surfaces misoriented 3
Mat. Sci. Engin. B 35, 295-298 (1995)

65
N.N. Ledentsov, M.V. Maximov, P.S. Kop'ev, V.M. Ustinov, M.V. Belousov, B.Ya. Meltser, S.V. Ivanov, V.A. Shchukin, Zh.I. Alferov, M. Grundmann, D. Bimberg, S.S. Ruvimov, W. Richter, P. Werner, U. Gösele, J. Heydenreich, P.D. Wang, C.M. Sotomayor Torres
Optical Spectroscopy of Self-Organized Nanoscale Heterostructures Involving High-Index Surfaces
Microelectr. J. 26, 871-879 (1995)

64
M. Grundmann, O. Stier, D. Bimberg
InAs/GaAs Quantum Pyramids: Strain Distribution, Optical Phonons and Electronic Structure
Phys. Rev. B 52(16), 11969-11981 (1995)

63
S. Ruvimov, P. Werner, K. Scheerschmidt, J. Heydenreich, U. Richter, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, P.S. Kop’ev, Zh.I. Alferov
Structural Characterization of (In,Ga)As Quantum Dots in a GaAs Matrix
Phys. Rev. B 51(20), 14766-14769 (1995)

62
M. Grundmann, J. Christen, N.N. Ledentsov, J. Böhrer, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov
Ultranarrow Luminescence Lines from Single Quantum Dots
Phys. Rev. Lett. 74(20), 4043-4046 (1995)

61
M. Grundmann, N.N. Ledentsov, R. Heitz, L. Eckey, J. Böhrer, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, J. Heydenreich, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov
InAs/GaAs Quantum Dots: Radiative Recombination from Zero-dimensional States
Phys. Status Solidi B 188, 249-258 (1995)

60
D. Bimberg, M. Grundmann, N.N. Ledentsov, S.S. Ruvimov, P. Werner, U. Richter, J. Heydenreich, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov
Self-organization processes in MBE grown quantum dot structures
Thin Solid Films 267, 32-36 (1995)

59
D. Bimberg, N. N. Ledentsov, N. Kirstaedter, O. Schmidt, M. Grundmann, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, M. V. Maximov, P. S. Kop'ev, Zh. I. Alferov, S. S. Ruvimov, U. Gösele, J. Heydenreich
InAs-GaAs Quantum Dot Lasers: in Situ Growth, Radiative Lifetimes and Polarization Properties
Extended Abstracts of the 1995 Int. Conf. on Solid State Devices and Materials (ssdm 95, Osaka), p. 716-718 (1995)

58
H. Nakashima, M. Takeuchi, K. Kimura, M. Iwane, H.K. Huang, K. Inoue, J. Christen, M. Grundmann, D. Bimberg
Formation and characterization of AlGaAs quantum wires on vicinal (110) surfaces
Extended Abstracts of the 1995 Int. Conf. on Solid State Devices and Materials (ssdm'95, Osaka), p. 785-787 (1995)

57
S. Ruvimov, P. Werner, K. Scheerschmidt, U. Richter, U. Gösele, J. Heydenreich, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, P.S. Kop'ev, Zh.I. Alferov
TEM/HREM Characterization of Self-organized (In,Ga)As Quantum Dots
Inst. Phys. Conf. Ser. 146, 31 (1995)

56
V.A. Shchukin, A.I. Borovkov, N.N. Ledentsov, P.S. Kop’ev, M. Grundmann, D. Bimberg
Stress-induced formation of ordered nanostructures on crystal surfaces
Phys. Low-Dim. Struct. 12, 43 (1995)

55
F. Heinrichsdorff, A. Krost, M. Grundmann, J. Böhrer, R. Heitz, D. Bimberg, A. Darhuber, G. Bauer, M. Wassermeier, S.S. Ruvimov
MOCVD grown InGaAs/GaAs quantum dots
Proc. VI European Workshop of MOVPE and Related Techniques (Gent, 1995):1-3

54
N. Kirstaedter, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, S.S. Ruvimov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov, U. Richter, P. Werner, U. Gösele, J. Heydenreich
Low Threshold, large T0 Injection Laser Emission from (InGa)As Quantum Dots
Electr. Lett. 30, 1416-1417 (1994)

53
E. Dröge, R.F. Schnabel, E.H. Böttcher, M. Grundmann, A. Krost, D. Bimberg
High-speed InGaAs on Si Metal-semiconductor-metal Photodetectors
Electr. Lett. 30, 1348-1350 (1994)

52
M. Grundmann, J. Christen, F. Heinrichsdorff, A. Krost, D. Bimberg
Strain Distribution in InP Grown on Patterned Si: Direct Visualization by Cathodoluminescence Wavelength Imaging
J. Electr. Mat. 23, 201-206 (1994)

51
M. Grundmann, E. Kapon, J. Christen, D. Bimberg
Electronic and Optical Properties of Quasi One-dimensional Carriers in Quantum Wires
J. Nonlin. Opt. Phys. Mat. 4, 99-140 (1994)

50
M. Grundmann, O. Stier, D. Bimberg
Symmetry Breaking in Pseudomorphic V-groove Quantum Wires
Phys. Rev. B 50(19), 14187-14192 (1994)

49
M. Grundmann, O. Stier, J. Christen, D. Bimberg
Pseudomorphic Quantum Wires: Symmetry Breaking due to Structural, Strain and Piezoelectric Field Induced Confinement
Superlatt. Microstr. 16(4), 249-251 (1994)

48
M. Grundmann, J. Christen. V. Tuerck, E. Kapon, R. Bhat, C. Caneau, D.M. Hwang, D. Bimberg
Radiative Recombination in Pseudomorphic InGaAs/GaAs Quantum Wires Grown on Nonplanar Substrates
Sol. St. Electr. 37, 1097-1100 (1994)

47
M. Grundmann, J. Christen, M. Joschko, D. Bimberg, E. Kapon
Recombination kinetics and intersubband relaxation in semiconductor quantum wires
Semic. Sci. Technol. 9(11S), 1939-1945 (1994)

46
J. Christen, E. Kapon, M. Grundmann, M. Walther, D. Bimberg
InGaAs Strained Quantum Wire Structures: Optical Properties and Laser Applications
Extended Abstracts of the 1994 Int. Conf. on Solid State Devices and Materials (ssdm 94, Yokohama), p. 66-68 (1994)

45
M. Grundmann, A. Krost, D. Bimberg, H. Cerva
The Formation of Interfaces and Crystal Defects: A case study of InGaAs Quantum Wells on InP/Si(001)
Proc. 4th Int. Conf. Formation of Semiconductor Interfaces (ICFSI-4), p. 530-533 (1994), H. L, ed. (World Scientific, Singapore, 1994)

44
R.F. Schnabel, M. Grundmann, A. Krost, J. Christen, F. Heinrichsdorff, D. Bimberg, H. Cerva
Defect Reduction and Strain Relaxation Mechanisms in InP grown on Patterned Si(001)
Proc. 6th Int. Conf. on InP and Rel. Compounds (IPRM-6), IEEE Catalog #94CH3369-6, Library of Congress #93-61270, p. 640-643 (1994)

43
M. Grundmann, V. Tuerck, J. Christen, R. F. Schnabel, D. Bimberg, E. Kapon, D.M. Hwang, C. Caneau, R. Bhat
Strained InGaAs/GaAs Quantum Wires: Modelling and Optical Properties
Proc. 6th Int. Conf. on InP and Rel. Compounds (IPRM-6), IEEE Catalog #94CH3369-6, Library of Congress #93-61270, p. 451-454 (1994)

42
R. F. Schnabel, A. Krost, M. Grundmann, F. Heinrichsdorff, D. Bimberg, M. Pilatzek, P. Harde
Epitaxy of High Resistivity InP on Si
Appl. Phys. Lett. 63, 3607-3609 (1993)

41
H.M. Cox, D.M. Hwang, M.R. Frei, C. Caneau, M. Grundmann, D. Bimberg
Simultaneous Planarized Selective-Area Epitaxy of GaxIn1-xAs in Normal and Dove-tail Etched Grooves
Proc. Mat. Res. Soc. 326, 561-566 (1993)

40
E. Kapon, M. Walther, D.M. Hwang, E. Colas, C. Caneau, R. Bhat, J. Christen, M. Grundmann, D. Bimberg
Carrier Capture and Stimulated Emission in Quantum Well Lasers Grown on non-planar Substrates
NATO ASI Series E: Applied Sciences 236, 317-330 (1993), J.-P. Leburton, J. Pascual, C. Sotomayor-Torres, eds. (Kluwer, Dordrecht, 1993), ISBN 0792322770

39
R.F. Schnabel, F. Heinrichsdorff, A. Krost, M. Grundmann, T. Wolf, K. Schatke, D. Bimberg, M. Pilatzek, P. Harde
Semi-insulating InP:Fe on Si
Proc. 5th Int. Conf. on Indium Phosphide and Related Compounds (IPRM-5), IEEE Catalog #93CH3276-3, Library of Congress #93-77243, p. 115-118 (1993)

38
J. Christen, M. Grundmann, E. Kapon, E. Colas, D.M. Hwang, D. Bimberg
Ultrafast carrier capture and long recombination lifetime of quasi one dimensional carriers in GaAs quantum wires
Appl. Phys. Lett. 61, 67-69 (1992)

37
M. Grundmann, A. Krost, D. Bimberg, O. Ehrmann
Maskless Growth of InP stripes on patterned Si (001): Defect Reduction and Improvement of Optical Properties
Appl. Phys. Lett. 60, 3292-3294 (1992)

36
J. Christen, V. Petrova-Koch, V. Lehmann, T. Muschik, A. Kux, M. Grundmann, D. Bimberg
Cathodoluminescence in microporous Si
Proc. 21st Int. Conf. on the Physics of Semiconductors (ICPS-21), (Beijing, China, 1992), p. 1487 (1992) (World Scientific, Singapore), P. Jiang, H.-Z. Zheng, eds.

35
K. Streubel, V. Härle, F. Scholz, M. Bode, M. Grundmann
Interfacial Properties of very thin GaInAs/InP Quantum Wells Structures grown by Metalorganic Vapor Phase Epitaxy
J. Appl. Phys. 71(7), 3300-3306 (1992)

34
A. Krost, M. Grundmann, D. Bimberg, H. Cerva
InP on patterned Si(001): Defect Reduction by Application of the Necking Mechanism
J. Cryst. Growth 124, 207-212 (1992)

33
M. Grundmann, A. Krost, D. Bimberg, H. Cerva
InGaAs/InP Quantum Wells on vicinal Si(001): Structural and Optical Properties
J. Vac. Sci. Technol. B 10, 1840-1843 (1992)

32
E.H. Böttcher, N. Kirstaedter, M. Grundmann, D. Bimberg, R. Zimmermann, C. Harder, H.P. Meier
Nonspectroscopic Approach to the Determination of the Chemical Potential and Bandgap Renormalization
Phys. Rev. B 45(15), 8535-8541 (1992)

31
J. Christen, E. Kapon, M. Grundmann, D. M. Hwang, M. Joschko, D. Bimberg
1D Charge Carrier Dynamics in GaAs Quantum Wires
Phys. Status Solidi B 173, 307-321 (1992)

30
E. Kapon, M. Walther, J. Christen, M. Grundmann, C. Caneau, D.M. Hwang, E. Colas, R. Bhat, G.H. Song, D. Bimberg
Quantum Wire Heterostructures for Optoelectronic Applications
Superlatt. Microstr. 12(4), 491-499 (1992)

29
M. Grundmann, A. Krost, D. Bimberg
Crystallographic and Optical Properties of InP/Si (001) Grown by Low Temperature MOCVD Process
Surf. Sci. 267, 47-49 (1992)

28
J. Christen, E. Kapon, E. Colas, D.M. Hwang, L.M. Schiavone, M. Grundmann, D. Bimberg
Cathodoluminescence Investigation of Lateral Carrier Confinement in GaAs/AlGaAs Quantum Wires Grown by OMCVD on Non-planar Substrates
Surf. Sci. 267, 257-262 (1992)

27
E. Kapon, M. Walther, J. Christen, M. Grundmann, D.M. Hwang, E. Colas, D. Bimberg
Optical Properties of Semiconductor Quantum Wires Grown on Nonplanar Substrates
Springer Series in Solid State Sciences 111, 300-310 (1992), G. Bauer, F. Kuchar, H. Heinrich, eds. (Springer, Berlin, 1992), ISBN 978-3-642-84857-5

26
M. Grundmann, A. Krost, D. Bimberg, O. Ehrmann
Local Epitaxy of Inp on V-Grooved Si
6th Int. Conf. Metalorganic Vapor Phase Epitaxy, p. 17-18 (1992)

25
D. Bimberg, M. Grundmann, J. Christen
Characterization of Strained Heterostructures by Cathodoluminescence
AIP Conf. Proc. 227, 68-71 (1991) (AIP Publishing LLC, New York)

24
M. Grundmann, A. Krost, D. Bimberg
Low Temperature Metal Organic Chemical Vapor Deposition of InP on Si (001)
Appl. Phys. Lett. 58, 284-286 (1991)

23
M. Grundmann, J. Christen, D. Bimberg, A. Hashimoto, T. Fukunaga, N. Watanabe
Direct Imaging of Si Incorporation in GaAs Masklessly Grown on Patterned Si Substrates
Appl. Phys. Lett. 58, 2090-2092 (1991)

22
M. Grundmann, A. Krost, D. Bimberg
Antiphase Domain Free InP on Si (001): Optimization of MOCVD Process
J. Cryst. Growth 115, 150-153 (1991)

21
J. Böhrer, M. Grundmann, U. Lienert, D. Bimberg, M. Kamada, N. Watanabe
Determination of the band discontinuity of MOCVD grown InGaAs/InAlAs Heterostructures with Optical and Structural Methods
J. Cryst. Growth 107, 555-560 (1991)

20
M. Grundmann, A. Krost, D. Bimberg
LP-MOVPE Growth of Antiphase Domain Free InP on (001) Si using Low Temperature Processing
J. Cryst. Growth 107, 494-495 (1991)

19
J. Christen, M. Grundmann, D. Bimberg
Scanning Cathodoluminescence Microscopy: A Unique Approach to Atomic Scale Characterization of HeteroInterfaces and Imaging of Semiconductor Inhomogeneities
J. Vac. Sci. Technol. B 9, 2358-2368 (1991)

18
M. Grundmann, A. Krost, D. Bimberg
Observation of the First Order Phase Transition from Single to Double Stepped Si (001) in Metalorganic Chemical Vapor Deposition of InP on Si
J. Vac. Sci. Technol. B 9, 2158-2166 (1991)

17
Marius Grundmann, Jürgen Christen, Dieter Bimberg
Cathodoluminescence of Strained Quantum Wells and Layers
Superlatt. Microstr. 9(1), 65-75 (1991)

16
M. Grundmann
Heteroepitaxie von InP auf Si (001)
Dissertation (Technische Universität Berlin, 1991)

15
K. Streubel, F. Scholz, V. Härle, M. Bode, M. Grundmann, J. Christen, D. Bimberg
Determination of the interface structure of very thin GaInAs/InP quantum wells
Proc. 3rd Int. Conf. Indium Phosphide and Related Materials, p. 468-471 (1991)

14
M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Erratum: Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells [Appl. Phys. Lett. 55, 1765 (1989)]
Appl. Phys. Lett. 57(19), 2034 (1 page) (1990)

13
M. Grundmann, U. Lienert, D. Bimberg, B. Sievers, F. R. Keßler, A. FischerColbrie, J.N. Miller
Orthorhombic Crystal Symmetry in Partially Relaxed In0.23Ga0.77As/GaAs Quantum Wells: Impact on Valence Band Structure and Optical Anisotropy
Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) (Thessaloniki, Greece, 1990) 2, 945 (1990) (World Scientific, Singapore), E.M. Anastassakis, J.D. Koannopoulos, eds.

12
E.H. Böttcher, N. Kirstaedter, M. Grundmann, D. Bimberg, C. Harder, M. Meier
Band-Gap Renormalization in undoped GaAs/AlGaAs Quantum Wells Determined by a Non-Spectroscopic Method
Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) (Thessaloniki, Greece, 1990) 1, 371 (1990) (World Scientific, Singapore), E.M. Anastassakis, J.D. Koannopoulos, eds.

11
J. Christen, M. Grundmann, D. Bimberg, A. Hashimoto, T. Fukunaga, N. Watanabe
Direct Imaging of Lateral Bandgap Variation in GaAs on V grooved Si
Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) (Thessaloniki, Greece, 1990) 1, 272 (1990) (World Scientific, Singapore), E.M. Anastassakis, J.D. Koannopoulos, eds.

10
M. Grundmann, U. Lienert, J. Christen, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Dependence of Structural and Optical Properties of In0.23Ga0.77As/GaAs Quantum Wells on Misfit Dislocations: Different Critical Thickness for Dislocation Generation and Degradation of Optical Properties
J. Vac. Sci. Technol. B 8, 751-757 (1990)

9
D.B. Tran Thoai, R. Zimmermann, M. Grundmann, D. Bimberg
Image Charges in Semiconductor Quantum Wells: Effect on Exciton Binding Energy
Phys. Rev. B 42(9), 5906-5909 (1990)

8
M. Grundmann, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Recombination Dynamics in Pseudomorphic and Partially Relaxed In0.23Ga0.77As/GaAs Quantum Wells
Phys. Rev. B 41(14), 10120-10123 (1990)

7
M. Grundmann, U. Lienert, J. Christen, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Pseudomorphic In0.23Ga0.77As/GaAs Quantum Wells: Correlation of Anisotropic Lattice Relaxation and Degradation of Optical Properties
Springer Series in Solid State Sciences 97, 304-312 (1990), F. Kuchar, H. Heinrich, G. Bauer, eds. (Springer, Berlin, 1990), ISBN 978-3-642-84274-0

6
M. Grundmann, J. Christen, D. Bimberg
Cathodoluminescence Imaging of Defects at Semiconductor Surfaces and Interfaces
Defect Control in Semiconductors 2, 1203-1211 (1990), K. Sumino, ed. (North-Holland, Amsterdam, 1990)

5
M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Anisotropic and Inhomogeneous Strain Relaxation in Pseudomorphic In0.23Ga0.77As/GaAs Quantum Wells
Appl. Phys. Lett. 55, 1765-1767 (1989)

4
J. Christen, M. Grundmann, D. Bimberg
Direct Imaging and Theoretical Modelling of the Atomistic Morphological and Chemical Structure of Semiconductor Heterointerfaces
Appl. Surf. Sci. 41/42, 329-336 (1989)

3
M. Grundmann, J. Christen, D. Bimberg, A. Fischer-Colbrie, R. Hull
Misfit Dislocations in Pseudomorphic In0.23Ga0.77As/GaAs Quantum Wells: Influence on Lifetime and Diffusion of Excess Excitons
J. Appl. Phys. 66(5), 2214-2216 (1989)

2
M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Dislocation Induced Anisotropies of the Structural and Optical Properties of Pseudomorphic InGaAs/GaAs Quantum Wells
Inst. Phys. Conf. Ser. 106, 453-458 (1989), T. Ikoma, H. Watanabe, eds.

1
M. Grundmann, D. Bimberg
Anisotropy Effects on Excitonic Properties in Realistic Quantum Wells
Phys. Rev. B 38(18), 13486-13489 (1988)