Publications Marius GrundmannPlease request access to reprints here. Hirsch index (based on Publons) Currently selected: years: all | journals: all | types: all | funding: all | all authors all info no icons RTF Initials No issue Funding Style1 Style2 Christiane Dethloff Christiane Dethloff, Katrin Thieme, Susanne Selle, Michael Seifert, Sofie Vogt, Daniel Splith, Silvana Botti, Marius Grundmann, Michael Lorenz Ni-Alloyed Copper Iodide Thin Films: Microstructural Features and Functional Performance, in: Phys. Status Solidi B 261(3), 2300492:1-11 (2024) Sebastian Henn Sebastian Henn, Gregor Dornberg, Andreas Müller, Carsten Bundesmann, Frank Frost, Chris Sturm, Marius Grundmann Optical and structural characterization of ZnO thin films upon ion beam assisted smoothing, in: Thin Solid Films 794, 140290:1-8 (2024) A. Jörns A. Jörns, H. von Wenckstern, and M. Grundmann Demonstration of Two Multi-component Target Ablation Approaches and Their Application in Combinatorial Pulsed Laser Deposition, in: Adv. Phys. Res. XXX(XX), published online:1-8 (2024) M. Grundmann M. Grundmann Quantum devices of reduced dimensionality, in: Encyclopedia of Condensed Matter Physics (2nd edition) 3, 529-533 (2024), T. Chakraborty, ed. (Elsevier, Oxford, 2024), ISBN 978-0-323-91408-6 Thorsten Schultz Thorsten Schultz, Max Kneiß, Philipp Storm, Daniel Splith, Holger von Wenckstern, Christoph T. Koch, Adnan Hammud, Marius Grundmann, Norbert Koch Growth of κ-([Al,In]xGa1-x)2O3 Quantum Wells and their Potential for Quantum Well Infrared Photodetectors, in: ACS Appl. Mater. Interfaces 15(24), 29535-29541 (2023) Fabian Schöppach Fabian Schöppach, Daniel Splith, Holger von Wenckstern, Marius Grundmann Oxygen Plasma Treatment to Enable Indium Oxide MESFET Devices, in: Adv. Electron. Mater. 9(11), 2300291:1-7 (2023) Fangjuan Geng Fangjuan Geng, Liangjun Wang, Tillmann Stralka, Daniel Splith, Siyuan Ruan, Jialin Yang, Lei Yang, Gang Gao, Liangge Xu, Michael Lorenz, Marius Grundmann, Jiaqi Zhu, Chang Yang (111)-oriented growth and acceptor doping of transparent conductive CuI:S thin films by spin coating and RF-sputtering, in: Adv. Engin. Mater. 25(11), 2201666:1-5 (2023) Evgeny Krüger Evgeny Krüger, Michael Seifert, Volker Gottschalch, Harald Krautscheid, Claudia S. Schnohr, Silvana Botti, Marius Grundmann, Chris Sturm Optical properties of AgxCu1–xI alloy thin films, in: AIP Adv. 13(3), 035117:1-11 (2023) Jon Borgersen Jon Borgersen, Robert Karsthof, Vegard Rønning, Lasse Vines, Holger von Wenckstern, Marius Grundmann, Andrej Yu. Kuznetsov, Klaus Magnus Johansen Origin of enhanced conductivity in low dose ion irradiated oxides, in: AIP Adv. 13(1), 015211:1-5 (2023) Andreas Müller Andreas Müller, Sebastian Henn, Evgeny Krüger, Steffen Blaurock, Harald Krautscheid, Marius Grundmann, Chris Sturm Two- and three-photon absorption in bulk CuI, in: Appl. Phys. Lett. 123(12), 122103:1-5 (2023) Sijun Luo Sijun Luo, Lukas Trefflich, Susanne Selle, Ron Hildebrandt, Evgeny Krüger, Stefan Lange, Jingjing Yu, Chris Sturm, Michael Lorenz, Holger von Wenckstern, Christian Hagendorf, Thomas Höche, Marius Grundmann Ultrawide Bandgap Willemite-Type Zn2GeO4 Epitaxial Thin Films, in: Appl. Phys. Lett. 122(3), 031601:1-7 (2023) Clemens Petersen Clemens Petersen, Sofie Vogt, Max Kneiß, Holger von Wenckstern, Marius Grundmann PLD of α-Ga2O3 on m-plane Al2O3: Growth regime, growth process, and structural properties, in: APL Mater. 11(6), 061122:1-8 (2023) Ron Hildebrandt Ron Hildebrandt, Michael Seifert, Janine George, Steffen Blaurock, Silvana Botti, Harald Krautscheid, Marius Grundmann, Chris Sturm Temperature dependent second-order Raman scattering in CuI, in: arxiv: 2305.18931 (2023) J.K. Jochum J.K. Jochum, M. Lorenz, H.P. Gunnlaugsson, C. Patzig, T. Höche, M. Grundmann, A. Vantomme, K. Temst, M.J. Van Bael, V. Lazenka Impact of magnetization and hyperfine field distribution on high magnetoelectric coupling strength in BaTiO3-BiFeO3 multilayers, in: arxiv: 2303.08493 (2023) Amanda Langørgen Amanda Langørgen, Ymir Kalmann Frodason, Robert Karsthof, Holger von Wenckstern, Ingvild Julie Thue Jensen, Lasse Vines, Marius Grundmann Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy, in: J. Appl. Phys. 134(1), 015701:1-6 (2023) S. Köpp S. Köpp, C. Petersen, D. Splith, M. Grundmann, H. von Wenckstern Properties of Schottky barrier diodes on heteroeptixial α-Ga2O3 thin films, in: J. Vac. Sci. Technol. A 41(4), 043411:1-9 (2023) [Editor's Pick] Laurenz Thyen Laurenz Thyen, Daniel Splith, Max Kneiß, Marius Grundmann, Holger von Wenckstern Masked-assisted radial-segmented target pulsed-laser deposition: A Novel Method for Area-Selective Deposition using Pulsed-Laser Deposition, in: J. Vac. Sci. Technol. A 41(2), 020801:1-5 (2023) [Editor's Pick] R. Hildebrandt R. Hildebrandt, M. Seifert, J. George, S. Blaurock, S. Botti, H. Krautscheid, M. Grundmann, C. Sturm Determination of acoustic phonon anharmonicities via second-order Raman scattering in CuI, in: New J. Phys. 25(12), 123022:1-11 (2023) S. Montag S. Montag, D. Splith, M. Kneiß, M. Grundmann, J. Garcia Fernandez, Ø. Prytz, H. von Wenckstern Cation segregation observed in an (In,Ga)2O3 material thin film library beyond the miscibility limit of the bixbyite structure, in: Phys. Rev. Mater. 7(9), 094603:1-9 (2023) Tillmann Stralka Tillmann Stralka, Michael Bar, Fabian Schöppach, Susanne Selle, Chang Yang, Holger von Wenckstern, Marius Grundmann Grain and grain boundary conduction channels in copper iodide thin films, in: Phys. Status Solidi A 220(6), 2200883:1-8 (2023) Sofie Vogt Sofie Vogt, Clemens Petersen, Max Kneiß, Daniel Splith, Thorsten Schultz, Holger von Wenckstern, Norbert Koch, Marius Grundmann Realization of conductive n-type doped α-Ga2O3 on m-plane sapphire grown by a two step pulsed laser deposition process, in: Phys. Status Solidi A 220(3), 2200721:1-6 (2023) Eva M. Zollner Eva M. Zollner, Susanne Selle, Chang Yang, Konrad Ritter, Stefanie Eckner, Edmund Welter, Marius Grundmann, Claudia S. Schnohr Oxygen-induced phase separation in sputtered Cu-Sn-I-O thin films, in: Phys. Status Solidi A 220(5), 2200646:1-10 (2023) Marius Grundmann Marius Grundmann Space Charge Region Beyond the Abrupt Approximation, in: Phys. Status Solidi B 260(11), 2300257:1-4 (2023) Evgeny Krüger Evgeny Krüger, Volker Gottschalch, Gabriele Benndorf, Ron Hildebrandt, Ana Lucía Pereira Brenes, Steffen Blaurock, Michael Bar, Stefan Merker, Chris Sturm, Marius Grundmann, Harald Krautscheid Epitaxial growth of AgxCu1–xI on Al2O3(0001), in: Phys. Status Solidi B 260(2), 2200493:1-8 (2023) Apoorva Sharma Apoorva Sharma, Oana T. Ciubotariu, Patrick Matthes, Shun Okano, Vitaly Zviagin, Jana Kalbáčová, Sibylle Gemming, Cameliu Himcinschi, Marius Grundmann, Dietrich R.T. Zahn, Manfred Albrecht, Georgeta Salvan Optical and magneto-optical properties of pulsed laser-deposited thulium iron garnet thin films, in: Appl. Res. 3(2), e202200064:1-11 (2023) Marius Grundmann Marius Grundmann Thin Film Electronics from Amorphous Oxide and Halogen Semiconductors, in: BuildMoNa Annual Report 2021, p. 27-29 (2023) Michael Lorenz Michael Lorenz, Philipp Storm, Stephan Gierth, Susanne Selle, Holger von Wenckstern, Marius Grundmann Diffundierter Sauerstoff als dominierender flacher Akzeptor in p-Typ Kupferiodid-Dünnfilmen, in: Chemie Ingenieur Technik 95(11), 1786-1793 (2023) Fangjuan Geng Fangjuan Geng, Yu-Ning Wu, Daniel Splith, Liangjun Wang, Xiaowan Kang, Shanshan Liang, Lei Yang, Michael Lorenz, Marius Grundmann, Jiaqi Zhu, Chang Yang Amorphous Transparent Cu(S,I) Thin Films with Very High Hole Conductivity, in: J. Phys. Chem. Lett. 14(26), 6163-6169 (2023) Michael Lorenz Michael Lorenz, Holger Hochmuth, Holger von Wenckstern, Marius Grundmann Flexible hardware concept of pulsed laser deposition for large areas and combinatorial composition spreads, in: Rev. Sci. Instrum. 94(8), 083905:1-12 (2023) Marius Grundmann Marius Grundmann DEVICE FOR CONDUCTING RADIATION, A PHOTODETECTOR ARRANGEMENT, AND A METHOD FOR SPATIALLY RESOLVED SPECTRAL ANALYSIS, in: US 11,543,346 B2 (United States Patent, 2023) Philipp Storm Philipp Storm, Khanim Karimova, Michael Sebastian Bar, Susanne Selle, Holger von Wenckstern, Marius Grundmann, Michael Lorenz Suppression of Rotational Domains of CuI employing Sodium Halide Buffer Layers, in: ACS Appl. Mater. Interfaces 14(10), 12350-12358 (2022) Robert Karsthof Robert Karsthof, Ymir Kalmann Frodason, Augustinas Galeckas, Philip Michael Weiser, Vitaly Zviagin, Marius Grundmann Light absorption and emission by defects in doped nickel oxide, in: Adv. Phot. Res. 3(11), 202200138:1-10 (2022) Tanja Jawinski Tanja Jawinski, Chris Sturm, Roland Clausing, Heiko Kempa, Marius Grundmann, Roland Scheer, Holger von Wenckstern Highly crystalline In2S3 thin films epitaxially grown on sapphire substrates, in: AIP Adv. 12(12), 125215:1-9 (2022) [Featured Article] Mao Wang Mao Wang, Ye Yu, Slawomir Prucnal, Yonder Berencén, Mohd Saif Shaikh, Lars Rebohle, Muhammad Bilal Khan, Vitaly Zviagin, René Hübner, Alexej Pashkin, Artur Erbe, Yordan M. Georgiev, Marius Grundmann, Manfred Helm, Robert Kirchner, Shengqiang Zhou Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon, in: arxiv: 2210.03373 (2022) Michael Seifert Michael Seifert, Evgeny Krüger, Michael S. Bar, Stefan Merker, Holger von Wenckstern, Harald Krautscheid, Marius Grundmann, Chris Sturm, Silvana Botti Dielectric function of CuBrxI1−x alloy thin films, in: arxiv: 2207.01344 (2022) Robert Karsthof Robert Karsthof, Ymir Kalmann Frodason, Augustinas Galeckas, Philip Michael Weiser, Vitaly Zviagin, Marius Grundmann Light absorption and emission by defects in doped nickel oxide, in: arxiv: 2205.02606 (2022) Xinyi Xia Xinyi Xia, Nahid Sultan Al-Mamun, Chaker Fares, Aman Haque, Fan Ren, Anna Hassa, Holger von Wenckstern, Marius Grundmann, S.J. Pearton Band Alignment of Al2O3 on α-(AlxGa1-x)2O3, in: ECS J. Solid State Sci. Techn. 11(2), 025006:1-8 (2022) Philipp Storm Philipp Storm, Susanne Selle, Holger von Wenckstern, Marius Grundmann, Michael Lorenz Epitaxial lift-off of single crystalline CuI thin films, in: J. Phys. Chem. C 10(11), 4124-4127 (2022) Thomas Ruf Thomas Ruf, Stefan Merker, Frank Syrowatka, Philip Trempler, Georg Schmidt, Michael Lorenz, Marius Grundmann, Reinhard Denecke Preferential growth of perovskite BaTiO3 thin films on Gd3Ga5O12(100) and Y3Fe5O12(100) oriented substrates by pulsed laser deposition, in: Mater. Adv. 3(12), 4920-4931 (2022) Mao Wang Mao Wang, Ye Yu, Slawomir Prucnal, Yonder Berencén, Mohd Saif Shaikh, Lars Rebohle, Muhammad Bilal Khan, Vitaly Zviagin, René Hübner, Alexej Pashkin, Artur Erbe, Yordan M. Georgiev, Marius Grundmann, Manfred Helm, Robert Kirchner, Shengqiang Zhou Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon, in: Nanoscale 14(7), 2826-2836 (2022) A. Welk A. Welk, A. Reinhardt, D. Splith, H. von Wenckstern, M. Grundmann, O. Herrfurth Analysis of an extended percolation-based random band-edge model applied to the amorphous oxide semiconductors: multi-anionic zinc oxynitride, multi-cationic zinc tin oxide and multinary zinc magnesium oxynitride, in: Phys. Rev. Appl. 17(2), 024007:1-14 (2022) Michael Seifert Michael Seifert, Evgeny Krüger, Michael S. Bar, Stefan Merker, Holger von Wenckstern, Harald Krautscheid, Marius Grundmann, Chris Sturm, Silvana Botti Dielectric function of CuBrxI1–x alloy thin films, in: Phys. Rev. Mater. 6(12), 124601:1-11 (2022) K. Dorywalski K. Dorywalski, O. Lupicka, M. Grundmann, C. Sturm Combination of a global-search method with model selection criteria for the ellipsometric data evaluation of DLC coatings, in: Adv. Opt. Technol. 11(5-6), 173-178 (2022) Marius Grundmann Marius Grundmann Amorphous oxide semiconductors for integrated devices, in: BuildMoNa Annual Report 2020, p. 27-31 (2022) Marius Grundmann Marius Grundmann The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 4th edition, in: (Springer Nature, Cham, 2021), ISBN 978-3-030-51568-3 Jack E.N. Swallow Jack E.N. Swallow, Robert G. Palgrave, Philip A.E. Murgatroyd, Anna Regoutz, Michael Lorenz, Anna Hassa, Marius Grundmann, Holger von Wenckstern, Joel B. Varley, Tim D. Veal Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors, in: ACS Appl. Mater. Interfaces 13(2), 2807-2819 (2021) Anna Reinhardt Anna Reinhardt, Holger von Wenckstern, Marius Grundmann All-amorphous Junction Field-Effect Transistors Based on High-Mobility Zinc Oxynitride, in: Adv. Electron. Mater. 7(4), 2000883:1-6 (2021) R. Hildebrandt R. Hildebrandt, C. Sturm, M. Grundmann, M. Wieneke, A. Dadgar Raman tensor determination of transparent uniaxial crystals and their thin films - a-plane GaN as exemplary case, in: Appl. Phys. Lett. 119(12), 121109:1-5 (2021) Evgeny Krüger Evgeny Krüger, Michael S. Bar, Steffen Blaurock, Lukas Trefflich, Ron Hildebrandt, Andreas Müller, Oliver Herrfurth, Gabriele Benndorf, Holger von Wenckstern, Harald Krautscheid, Marius Grundmann, Chris Sturm Dynamics of exciton-polariton emission in CuI, in: APL Mater. 9(12), 121102:1-12 (2021) P. Storm P. Storm, S. Gierth, S. Selle, M.S. Bar, H. von Wenckstern, M. Grundmann, M. Lorenz Evidence for oxygen being a dominant shallow acceptor in p-type CuI, in: APL Mater. 9(5), 051101:1-9 (2021) A. Welk A. Welk, A. Reinhardt, O. Herrfurth, T. Schultz, H. von Wenckstern, N. Koch, M. Grundmann Tuning material properties of amorphous zinc oxynitride thin films by magnesium cationic substitution, in: APL Mater. 9(2), 021120:1-8 (2021) Xinyi Xia Xinyi Xia, Chaker Fares, Fan Ren, Anna Hassa, Holger von Wenckstern, Marius Grundmann, S.J. Pearton Al Composition Dependence of Band Offsets for SiO2 on α-(AlxGa1-x)2O3 , in: ECS J. Solid State Sci. Techn. 10(11), 113007:1-8 (2021) Oliver Lahr Oliver Lahr, Max Steudel, Holger von Wenckstern, Marius Grundmann Mechanical Stress Stability of Amorphous Zinc Tin Oxide Thin-Film Transistors, in: Front. Electron. 2, 797308:1-7 (2021) Jon Borgersen Jon Borgersen, Klaus Magnus Johansen, Lasse Vines, Holger von Wenckstern, Marius Grundmann, Andrej Yu. Kuznetsov Fermi level controlled point defect balance in ion irradiated indium oxide, in: J. Appl. Phys. 130(8), 085703:1-6 (2021) M. Kneiß M. Kneiß, D. Splith, P. Schlupp, A. Hassa, H. von Wenckstern, M. Lorenz, M. Grundmann Realization of Highly Rectifying Schottky Barrier Diodes and pn Heterojunctions on κ-Ga2O3 by Overcoming the Conductivity Anisotropy, in: J. Appl. Phys. 130(8), 084502:1-14 (2021) P. John P. John, M. Al Khalfioui, C. Deparis, A. Welk, C. Lichtensteiger, R. Bachelet, G. Saint-Girons, M. Hugues, M. Grundmann, J. Zúñiga-Pérez Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical and optical properties, in: J. Appl. Phys. 130(6), 065104:1-11 (2021) Volker Gottschalch Volker Gottschalch, Gabriele Benndorf, Susanne Selle, Evgeny Krüger, Steffen Blaurock, Max Kneiß, Michael Bar, Chris Sturm, Stefan Merker, Thomas Höche, Marius Grundmann, Harald Krautscheid Epitaxial growth of rhombohedral β- and cubic γ-CuI, in: J. Cryst. Growth 570, 126218 (2021) M. Kneiß M. Kneiß, D. Splith, H. von Wenckstern, M. Lorenz, T. Schultz, N. Koch, M. Grundmann Strain States and Relaxation for α-(AlxGa1−x)2O3 Thin Films on Prismatic Planes of α-Al2O3 in the Full Composition Range: Fundamental Difference of a- and m-Epitaxial Planes in the Manifestation of Shear Strain and Lattice Tilt, in: J. Mat. Res. 36(23), 4816-4831 (2021) Oliver Herrfurth Oliver Herrfurth, Evgeny Krüger, Steffen Blaurock, Harald Krautscheid, Marius Grundmann Hot-phonon effects in photo-excited wide-bandgap semiconductors, in: J. Phys.: Condens. Matter 33(20), 205701:1-9 (2021) A. Hassa A. Hassa, M. Grundmann, H. von Wenckstern Progression of Group-III Sesquioxides: Epitaxy, Solubility and Desorption, in: J. Phys. D: Appl. Phys. 54(22), 223001:1-15 (2021) Marius Grundmann Marius Grundmann, Tillmann Stralka, Michael Lorenz, Susanne Selle, Christian Patzig, Thomas Höche Plastic strain relaxation and alloy instability in epitaxial corundum-phase (Al,Ga)2O3 thin films on r-plane Al2O3 , in: Mater. Adv. 2(13), 4316-4322 (2021) S. Henn S. Henn, M. Grundmann, C. Sturm Strong coupling of Bloch surface waves and excitons in ZnO up to 430 K, in: New J. Phys. 23(9), 093031:1-10 (2021) Marius Grundmann Marius Grundmann, Chris Sturm Angular position of singular optic axes for arbitrary dielectric tensors, in: Phys. Rev. A 103(5), 053510:1-6 (2021) O. Herrfurth O. Herrfurth, S. Richter, M. Rebarz, S. Espinoza, J. Zúñiga-Pérez, C. Deparis, J. Leveillee, A. Schleife, M. Grundmann, J. Andreasson, R. Schmidt-Grund Transient birefringence and dichroism in ZnO studied with fs-time-resolved spectroscopic ellipsometry, in: Phys. Rev. Res. 3(1), 013246:1-12 (2021) Daniel Splith Daniel Splith, Stefan Müller, Holger von Wenckstern, Marius Grundmann Numerical modeling of Schottky barrier diode characteristics, in: Phys. Status Solidi A 218(12), 202100121:1-13 (2021) M. Grundmann M. Grundmann, M. Lorenz Azimuthal anisotropy of rhombohedral (corundum-phase) heterostructures, in: Phys. Status Solidi B 258(7), 202100104:1-5 (2021) M. Kneiß M. Kneiß, P. Storm, A. Hassa, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann Epitaxial Growth of κ-(AlxGa1−x)2O3 Layers and Superlattice Heterostructures up to x=0.48 on Highly Conductive Al-doped ZnO Thin Film Templates by Pulsed Laser Deposition, in: Phys. Status Solidi B 258(2), 202000359:1-10 (2021) Anna Hassa Anna Hassa, Philipp Storm, Max Kneiß, Daniel Splith, Holger von Wenckstern, Michael Lorenz, Marius Grundmann Correction to: Structural and elastic properties of α-(AlxGa1−x)2O3 thin films on (11.0) Al2O3 substrates for the entire composition range, in: Phys. Status Solidi B 258(2), 2000632 (1 page) (2021) Anna Hassa Anna Hassa, Philipp Storm, Max Kneiß, Daniel Splith, Holger von Wenckstern, Michael Lorenz, Marius Grundmann Structural and elastic properties of α-(AlxGa1−x)2O3 thin films on (11.0) Al2O3 substrates for the entire composition range, in: Phys. Status Solidi B 258(2), 2000394:1-10 (2021) Philipp Storm Philipp Storm, Michael Sebastian Bar, Susanne Selle, Holger von Wenckstern, Marius Grundmann, Michael Lorenz P-Type Doping and Alloying of CuI Thin Films with Selenium, in: Phys. Status Solidi RRL 15(8), 202100214:1-6 (2021) Wenlei Yu Wenlei Yu, Gabriele Benndorf, Yunfeng Jiang, Kai Jiang, Chang Yang, Michael Lorenz, Marius Grundmann Control of optical absorption and emission of sputtered copper iodide thin films, in: Phys. Status Solidi RRL 15(1), 2000431:1-5 (2021) Marius Grundmann Marius Grundmann Combinatorial acceleration of material research, in: BuildMoNa Annual Report 2019, p. 26-28 (2021) Thorsten Schultz Thorsten Schultz, Max Kneiß, Philipp Storm, Daniel Splith, Holger von Wenckstern, Marius Grundmann, Norbert Koch Band offsets at κ-([Al,In]xGa1-x)2O3/MgO interfaces, in: ACS Appl. Mater. Interfaces 12(7), 8879-8885 (2020) Oliver Lahr Oliver Lahr, Michael Bar, Holger von Wenckstern, Marius Grundmann All-oxide transparent thin-film transistors based on amorphous zinc-tin-oxide fabricated at room temperature: Approaching the thermodynamic limit for sub-threshold swing, in: Adv. Electron. Mater. 6(10), 2000423:1-6 (2020) Anna Reinhardt Anna Reinhardt, Holger von Wenckstern, M. Grundmann Metal-Semiconductor Field-Effect Transistors Based on the Amorphous Multi-Anion Compound ZnON, in: Adv. Electron. Mater. 6(4), 1901066:1-5 (2020) Marius Grundmann Marius Grundmann Comment on "Stress–strain state in α-Ga2O3 epitaxial films on α-Al2O3 substrates" [Appl. Phys. Express 13, 075502 (2020)], in: Appl. Phys. Expr. 13(8), 089101 (1 page) (2020) Melanie Budde Melanie Budde, Daniel Splith, Piero Mazzolini, Abbes Tahraoui, Johannes Feldl, Manfred Ramsteiner, Holger von Wenckstern, Marius Grundmann, Oliver Bierwagen SnO/β-Ga2O3 vertical pn heterojunction diodes, in: Appl. Phys. Lett. 117(25), 252106:1-6 (2020) M. Grundmann M. Grundmann, M. Lorenz Epitaxial growth and strain relaxation of corundum-phase (Al,Ga)2O3 thin films from pulsed laser deposition at 1000°C on r-plane Al2O3, in: Appl. Phys. Lett. 117(24), 242102:1-4 (2020) Marius Grundmann Marius Grundmann Universal Relation for the Orientation of Dislocations from Prismatic Glide Systems in Hexagonal and Rhombohedral Strained Heterostructures, in: Appl. Phys. Lett. 116(8), 082104:1-3 (2020) Robert Karsthof Robert Karsthof, Holger von Wenckstern, Marius Grundmann Identification of LiNi and VNi acceptor levels in doped nickel oxide, in: APL Mater. 8(12), 121106:1-7 (2020) [Featured article] P. Storm P. Storm, M. Bar, S. Selle, C. Yang, H. von Wenckstern, M. Grundmann, M. Lorenz High mobility, highly transparent, smooth, p-type CuI thin films grown by pulsed laser deposition, in: APL Mater. 8(9), 091115:1-8 (2020) [SciLight] Oliver Lahr Oliver Lahr, Holger von Wenckstern, Marius Grundmann Ultrahigh-Performance Integrated Inverters Based on Amorphous Zinc-Tin-Oxide Deposited at Room Temperature, in: APL Mater. 8(9), 091111:1-8 (2020) [Editor's Pick] P. Schlupp P. Schlupp, S. Vogt, H. von Wenckstern, M. Grundmann Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates, in: APL Mater. 8(6), 061112:1-7 (2020) M. Kneiß M. Kneiß, P. Storm, A. Hassa, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann Growth, Structural and Optical Properties of Coherent κ-(AlxGa1-x)2O3/κ-Ga2O3 Quantum Well Superlattice Heterostructures, in: APL Mater. 8(5), 051112:1-14 (2020) M. Grundmann M. Grundmann, M. Lorenz Anisotropic Strain Relaxation Through Prismatic and Basal Slip in α-(Al,Ga)2O3 on R-Plane Al2O3, in: APL Mater. 8(2), 021108:1-14 (2020) A. Hassa A. Hassa, C. Sturm, M. Kneiß, D. Splith, H. von Wenckstern, T. Schultz, N. Koch, M. Lorenz, M. Grundmann Solubility Limit and Material Properties of a κ-(AlxGa1−x)2O3 thin film with a lateral cation gradient on (00.1)Al2O3 by tin-assisted PLD, in: APL Mater. 8(2), 021103:1-7 (2020) Robert Karsthof Robert Karsthof, Holger von Wenckstern, Marius Grundmann Identification of LiNi and VNi acceptor levels in doped nickel oxide, in: arxiv: 2010.02694 (2020) Melanie Budde Melanie Budde, Daniel Splith, Piero Mazzolini, Abbes Tahraoui, Johannes Feldl, Manfred Ramsteiner, Holger von Wenckstern, Marius Grundmann, Oliver Bierwagen SnO/β-Ga2O3 vertical pn heterojunction diodes, in: arxiv: 2010.00362 (2020) C. Wouters C. Wouters, C. Sutton, L. M. Ghiringhelli, T. Markurt, R. Schewski, A. Hassa, H. von Wenckstern, M. Grundmann, M. Scheffler, M. Albrecht Investigating the ranges of (meta)stable phase formation in (InxGa1-x)2O3: Impact of the cation coordination, in: arxiv: 2008.04573 (2020) Robert Staacke Robert Staacke, Roger John, Max Kneiß, Christian Osterkamp, Séverine Diziain, Fedor Jelezko, Marius Grundmann, Jan Meijer Method of full polarization control of microwave fields in a scalable transparent structure for spin manipulation, in: J. Appl. Phys. 128(19), 194301:1-9 (2020) V. Zviagin V. Zviagin, C. Sturm, P. Esquinazi, M. Grundmann, R. Schmidt-Grund Control of Magnetic Properties in Spinel ZnFe2O4 Thin Films Through Intrinsic Defect Manipulation, in: J. Appl. Phys. 128(16), 165702:1-7 (2020) Chaker Fares Chaker Fares, Minghan Xian, David J. Smith, Martha R. McCartney, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, S.J. Pearton Changes in band alignment during annealing at 600°C of ALD Al2O3 on (InxGa1-x)2O3 for x=0.25-0.74, in: J. Appl. Phys. 127(10), 105701:1-8 (2020) Haoming Wei Haoming Wei, Chao Yang, Yangqing Wu, Bingqiang Cao, Michael Lorenz, Marius Grundmann From energy harvesting to topologically insulating behavior: ABO3–type epitaxial thin films and superlattices, in: J. Mater. Chem. C 8(44), 15575-15596 (2020) Michitaka Fukumoto Michitaka Fukumoto, Chang Yang, Wenlei Yu, Christian Patzig, Thomas Höche, Thomas Ruf, Reinhard Denecke, Michael Lorenz, Marius Grundmann Experimental evidence of wide bandgap in triclinic (001)-oriented Sn5O2(PO4)2 thin films on Y2O3 buffered glass substrates , in: J. Mater. Chem. C 8(40), 14203-14207 (2020) Jon Borgersen Jon Borgersen, Lasse Vines, Ymir K. Frodason, Andrej Kuznetsov, Holger von Wenckstern, Marius Grundmann, Martin W. Allen, Jesús Zúñiga-Pérez, Klaus Johansen Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials, in: J. Phys.: Condens. Matter 32(50), 415704:1-12 (2020) Anna Hassa Anna Hassa, Charlotte Wouters, Max Kneiß, Daniel Splith, Chris Sturm, Holger von Wenckstern, Martin Albrecht, Michael Lorenz, Marius Grundmann Control of Phase Formation of (AlxGa1-x)2O3 Thin Films on c-plane Al2O3, in: J. Phys. D: Appl. Phys. 53(48), 485105:1-9 (2020) Stefan Hohenberger Stefan Hohenberger, Johanna K. Jochum, Margriet J. Van Bael, Kristiaan Temst, Christian Patzig, Thomas Höche, Michael Lorenz, Marius Grundmann Enhanced Magnetoelectric Coupling in BaTiO3-BiFeO3 Multilayers - An Interface Effect, in: Materials 13(1), 197:1-14 (2020) Linus Krieg Linus Krieg, Zhipeng Zhang, Daniel Splith, Holger von Wenckstern, Marius Grundmann, Xiaoxue Wang, Karen K. Gleason, Tobias Voss Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition, in: Nano Express 1(1), 010013:1-7 (2020) Linus Krieg Linus Krieg, Florian Meierhofer, Sascha Gorny, Stefan Leis, Daniel Splith, Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann, Xiaoxue Wang, Jana Hartmann, Christoph Margenfeld, Irene Manglano Clavero, Adrian Avramescu, Tilman Schimpke, Dominik Scholz, Hans-Jürgen Lugauer, Martin Strassburg, Jörgen Jungclaus, Steffen Bornemann, Hendrik Spende, Andreas Waag, Karen K. Gleason, Tobias Voss Towards 3D hybrid inorganic/organic optoelectronics: light emission and electronic transport properties of GaN/oCVD-PEDOT structures, in: Nature Commun. 11, 5092:1-10 (2020) Marius Grundmann Marius Grundmann Topological States of the Diatomic Linear Chain: Effect of Impedance Matching to the Fixed Ends, in: New J. Phys. 22(8), 083076:1-7 (2020) Steffen Richter Steffen Richter, Oliver Herrfurth, Shirly Espinoza, Mateusz Rebarz, Miroslav Kloz, Joshua A. Leveillee, André Schleife, Stefan Zollner, Marius Grundmann, Jakob Andreasson, Rüdiger Schmidt-Grund Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry, in: New J. Phys. 22(8), 083066:1-14 (2020) C. Sturm C. Sturm, S. Höfer, K. Hingerl, T.G. Mayerhöfer, M. Grundmann Dielectric function decomposition by dipole orientation distribution: Application to triclinic K2Cr2O7, in: New J. Phys. 22(7), 073041:1-11 (2020) C. Sturm C. Sturm, V. Zviagin, M. Grundmann Dielectric tensor, optical activity and singular optic axes of KTP in the spectral range 0.5-8.4 eV, in: Phys. Rev. Mater. 4(5), 055203:1-7 (2020) Robert Karsthof Robert Karsthof, Arthur Markus Anton, Friedrich Kremer, Marius Grundmann Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium, in: Phys. Rev. Mater. 4(3), 034601:1-7 (2020) C. Wouters C. Wouters, C. Sutton, L.M. Ghiringhelli, T. Markurt, R. Schewski, A. Hassa, H. von Wenckstern, M. Grundmann, M. Scheffler, M. Albrecht Investigating the ranges of (meta)stable phase formation in (InxGa1-x)2O3: Importance of the cation coordination, in: Phys. Rev. Res. 4(12), 125001:1-10 (2020) Lukas Trefflich Lukas Trefflich, Frank Dissinger, Rüdiger Schmidt-Grund, Chris Sturm, Siegfried R. Waldvogel, Marius Grundmann Influence of the excitation conditions on the emission behavior of carbon nanodot-based planar microcavities, in: Phys. Rev. Res. 2(4), 043216:1-6 (2020) Marius Grundmann Marius Grundmann Topological States due to Third-Neighbor Coupling in a Diatomic Linear Elastic Chains, in: Phys. Status Solidi B 257(9), 202000176:1-5 (2020) Marius Grundmann Marius Grundmann A Most General and Facile Recipe for the Calculation of Heteroepitaxial Strain, in: Phys. Status Solidi B 257(12), 2000323:1-5 (2020) Ingrid Mertig Ingrid Mertig, Marius Grundmann, Wolf Widdra Functionality of Oxide Interfaces, in: Phys. Status Solidi B 257(7), 2000270 (1 page) (2020) Robert Karsthof Robert Karsthof, Marius Grundmann, Holger von Wenckstern, Jesús Zúñiga-Pérez, Christiane Deparis Nickel oxide-based heterostructures with large band offsets, in: Phys. Status Solidi B 257(7), 1900639:1-11 (2020) Vitaly Zviagin Vitaly Zviagin, Marius Grundmann, Rüdiger Schmidt-Grund Impact of Defects on Magnetic Properties of Spinel Zinc Ferrite Thin Films, in: Phys. Status Solidi B 257(7), 1900630:1-11 (2020) R. Denecke R. Denecke, M. Welke, P. Huth, J. Gräfe, K. Brachwitz, M. Lorenz, M. Grundmann, M. Ziese, P. Esquinazi, E. Goering, G. Schütz, A. Chassé, K.-M. Schindler Magnetic Anisotropy in Thin Layers of (Mn,Zn)Fe2O4 on SrTiO3(001), in: Phys. Status Solidi B 257(7), 1900627:1-8 (2020) H. von Wenckstern H. von Wenckstern, M. Kneiß, P. Storm, M. Grundmann A review of the segmented-target approach to combinatorial material synthesis by pulsed-laser deposition, in: Phys. Status Solidi B 257(7), 1900626:1-13 (2020) Marius Grundmann Marius Grundmann The Principal Axes Systems for the Elastic Properties of Monoclinic Gallia (β-Ga2O3), in: Sci. Rep. 10, 19486:1-8 (2020) Marius Grundmann Marius Grundmann Oxid-Halbleiter mit ultrabreiter Bandlücke: Darstellung mittels kombinatorischer gepulster Laserdeposition und Untersuchung physikalischer Eigenschaften, in: Vakuum in Forschung und Praxis 32(6), 32-37 (2020) Chang Yang Chang Yang, Eduard Rose, Wenlei Yu, Tillmann Stralka, Fangjuan Geng, Michael Lorenz, Marius Grundmann Controllable growth of copper iodide by sputtering towards high-mobility thin films and self-assembled microcrystals, in: ACS Applied Electronic Materials 2(11), 3627-3632 (2020) Marius Grundmann Marius Grundmann Building material gradients laterally and vertically - combinatorial acceleration of material research and new device perspectives, in: BuildMoNa Annual Report 2018, p. 20-22 (2020) Daniel Splith Daniel Splith, Peter Schlupp, Holger von Wenckstern, Marius Grundmann All-oxide pn-heterojunction diodes with β-Ga2O3, in: Gallium Oxide: Crystal Growth, Materials Properties, and Devices, p. 689-702 (2020), M. Higashiwaki, S. Fujita, eds. (Springer, Cham, 2020), ISBN 978-3-030-37152-4 Holger von Wenckstern Holger von Wenckstern, Daniel Splith, Marius Grundmann Pulsed Laser Deposition of Ga2O3 and Related Alloys, in: Gallium Oxide: Crystal Growth, Materials Properties, and Devices, p. 273-291 (2020), M. Higashiwaki, S. Fujita, eds. (Springer, Cham, 2020), ISBN 978-3-030-37152-4 Krzysztof Dorywalski Krzysztof Dorywalski, Rüdiger Schmidt-Grund, Marius Grundmann Hybrid GA-gradient method for thin films ellipsometric data evaluation, in: J. of Computational Science 47(11), 101201:1-7 (2020) T. Jawinski T. Jawinski, R. Scheer, H. von Wenckstern, M. Lorenz, M. Grundmann Properties of epitaxially grown In2S3:V thin films for intermediate band solar cell application, in: Proc. 47th IEEE Photovoltaic Specialists Conference (PVSC), p. 2663-2666 (2020) Jonas Michel Jonas Michel, Daniel Splith, Julius Rombach, Alexandra Papadogianni, Theresa Berthold, Stefan Krischok, Marius Grundmann, Oliver Bierwagen, Holger von Wenckstern, Marcel Himmerlich Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3, in: ACS Appl. Mater. Interfaces 11(30), 27073-27087 (2019) O. Lahr O. Lahr, S. Vogt, H. von Wenckstern, M. Grundmann Low-voltage operation of ring oscillators based on room-temperature-deposited amorphous zinc-tin-oxide channel MESFETs, in: Adv. Electron. Mater. 5(12), 1900548:1-5 (2019) O. Herrfurth O. Herrfurth, T. Pflug, M. Olbrich, M. Grundmann, A. Horn, R. Schmidt-Grund Femtosecond-time-resolved imaging of the dielectric function of ZnO in the visible to near-IR spectral range, in: Appl. Phys. Lett. 115(21), 212103:1-5 (2019) [Editor's Pick] P. Storm P. Storm, M. Kneiß, A. Hassa, T. Schultz, D. Splith, H. von Wenckstern, N. Koch, M. Lorenz, M. Grundmann Epitaxial κ-(AlxGa1-x)2O3 Thin Films and Heterostructures grown by Tin-assisted VCCS-PLD, in: APL Mater. 7(11), 111110:1-8 (2019) [Editor's Pick] M. Kneiß M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, M. Lorenz, M. Grundmann Epitaxial Stabilization of Single Phase κ-(InxGa1-x)2O3 Thin Films up to x=0.28 on c-sapphire and κ-Ga2O3 (001) Templates by Tin-assisted VCCS-PLD, in: APL Mater. 7(10), 101102:1-10 (2019) [Editor's Pick] A. Hassa A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva, M. Grundmann Erratum: “Structural, optical, and electrical properties of orthorhombic κ-(InxGa1-x)2O3 thin films” [APL Mater. 7, 022525 (2019)], in: APL Mater. 7(7), 079901 (1 page) (2019) Chaker Fares Chaker Fares, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, Eric Lambers, S.J. Pearton Valence Band Offsets for ALD SiO2 and Al2O3 on (InxGa1-x)2O3 for x=0.25-0.74, in: APL Mater. 7(7), 071115:1-7 (2019) A. Hassa A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva, M. Grundmann Structural, optical and electrical properties of orthorhombic κ-(InxGa1-x)2O3 thin films, in: APL Mater. 7(2), 022525:1-9 (2019) M. Kneiß M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, T. Schultz, N. Koch, M. Grundmann Tin-Assisted Heteroepitaxial PLD-growth of κ-Ga2O3 Thin Films with High Crystalline Quality, in: APL Mater. 7(2), 022516:1-11 (2019) Robert Karsthof Robert Karsthof, Marius Grundmann, Holger von Wenckstern, Jesús Zúñiga-Pérez, Christiane Deparis Nickel oxide-based heterostructures with large band offsets, in: arxiv: 1910.13169 (2019) Vitaly Zviagin Vitaly Zviagin, Chris Sturm, Pablo Esquinazi, Marius Grundmann, Rüdiger Schmidt-Grund Control of Magnetic Order in Spinel ZnFe2O4 Thin Films Through Intrinsic Defect Manipulation, in: arxiv: 1909.13711 (2019) Robert Karsthof Robert Karsthof, Marius Grundmann, Arthur Markus Anton, Friedrich Kremer Polaronic inter-acceptor hopping transport in intrinsically doped nickel oxide, in: arxiv: 1905.03537 (2019) Steffen Richter Steffen Richter, Oliver Herrfurth, Shirly Espinoza, Mateusz Rebarz, Miroslav Kloz, Joshua A. Leveillee, André Schleife, Stefan Zollner, Marius Grundmann, Jakob Andreasson, Rüdiger Schmidt-Grund Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry, in: arxiv: 1902.05832 (2019) Slawomir Prucnal Slawomir Prucnal, Yonder Berencén, Mao Wang, Jörg Grenzer, Matthias Voelskow, Rene Hübner, Yuji Yamamoto, Alexander Scheit, Florian Bärwolf, Vitaly Zviagin, Rüdiger Schmidt-Grund, Marius Grundmann, Jerzy Żuk, Marcin Turek, Andrzej Droździel, Krzysztof Pyszniak, Robert Kudrawiec, Maciej P. Polak, Lars Rebohle, Wolfgang Skorupa, Manfred Helm, Shengqiang Zhou Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping, in: arxiv: 1901.01721 (2019) A. Hassa A. Hassa, H. von Wenckstern, L. Vines, M. Grundmann Influence of oxygen pressure on growth of Si-doped (AlxGa1-x)2O3 thin films on c-sapphire substrates by pulsed laser deposition, in: ECS J. Solid State Sci. Techn. 8(7), Q3217-Q3220 (2019) Stefan Müller Stefan Müller, Laurenz Thyen, Daniel Splith, Anna Reinhardt, Holger von Wenckstern, Marius Grundmann High-quality Schottky Barrier Diodes on β-Gallium Oxide Thin Films on Glass Substrate , in: ECS J. Solid State Sci. Techn. 8(7), Q3126-Q3132 (2019) Chaker Fares Chaker Fares, Zahabul Islam, Aman Haque, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, S.J. Pearton Effect of Annealing on the Band Alignment of ALD SiO2 on (AlxGa1-x)2O3 for x=0.2-0.65, in: ECS J. Solid State Sci. Techn. 8(12), P751-P756 (2019) Chaker Fares Chaker Fares, Max Kneiß, Holger von Wenckstern, Marko Tadjer, Fan Ren, Eric Lambers, Marius Grundmann, S.J. Pearton Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x=0.2-0.65, in: ECS J. Solid State Sci. Techn. 8(6), P351-P356 (2019) Marius Grundmann Marius Grundmann Monolithic Waveguide-based Linear Photodetector Array for Use as Ultra-Compact Spectrometer, in: IEEE Transact. Electr. Dev. 66(1), 470-477 (2019) Oliver Lahr Oliver Lahr, Zhipeng Zhang, Frank Grotjahn, Peter Schlupp, Sofie Vogt, Holger von Wenckstern, Andreas Thiede, Marius Grundmann Full-swing, High-gain Inverters Based on ZnSnO JFETs and MESFETs, in: IEEE Transact. Electr. Dev. 66(8), 3376-3381 (2019) Slawomir Prucnal Slawomir Prucnal, Yonder Berencén, Mao Wang, Lars Rebohle, Robert Kudrawiec, Maciej Polak, Vitaly Zviagin, Rüdiger Schmidt-Grund, Marius Grundmann, Joerg Grenzer, Marcin Turek, Andrzej Drozdziel, Krzysztof Pyszniak, Jerzy Zuk, Manfred Helm, Wolfgang Skorupa, Shengqiang Zhou Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing, in: J. Appl. Phys. 125(20), 203105:1-7 (2019) Volker Gottschalch Volker Gottschalch, Stefan Merker, Steffen Blaurock, Max Kneiß, Ulrike Teschner, Marius Grundmann, Harald Krautscheid Heteroepitaxial growth of α-, β-, γ- and κ-Ga2O3 phases by metalorganic vapor phase epitaxy, in: J. Cryst. Growth 510(15 March 2019), 76-84 (2019) Zhijie Li Zhijie Li, Hao Li, Zhonglin Wu, Mingkui Wang, Jingting Luo, Hamdi Torun, Pingan Hu, Chang Yang, Marius Grundmann, Xiaoteng Liu, Yong Qing Fu Advances in designs and mechanisms of semiconducting metal oxide nanostructures for high-precision gas sensors operated at room-temperature, in: Mater. Horiz. 6(3), 470-506 (2019) Leonard Brillson Leonard Brillson, Jonathan Cox, Hantian Gao, Geoffrey Foster, William Ruane, Alexander Jarjour, Martin Allen, David Look, Holger von Wenckstern, Marius Grundmann Native Point Defect Measurement and Manipulation In ZnO Nanostructures, in: Materials 12(14), 2242:1-15 (2019) Chris Sturm Chris Sturm, Vitali Zviagin, Marius Grundmann Applicability of the constitutive equations for the determination of the material properties of optically active materials, in: Opt. Lett. 44(6), 1351-1354 (2019) [Editor's Pick] Robert Karsthof Robert Karsthof, Marius Grundmann, Markus Anton, Friedrich Kremer Polaronic inter-acceptor hopping transport in intrinsically doped nickel oxide, in: Phys. Rev. B 99(23), 235201:1-13 (2019) [Editor's Suggestion] Steffen Richter Steffen Richter, Heinrich-Gregor Zirnstein, Jesús Zúñiga-Pérez, Christiane Deparis, Lukas Trefflich, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund Voigt Exceptional Points in an Anisotropic ZnO-based Planar Microcavity: Square-Root Topology, Polarization Vortices, and Circularity, in: Phys. Rev. Lett. 123(22), 227401:1-7 (2019) M. Grundmann M. Grundmann Modeling of a waveguide-based UV-VIS-IR spectrometer based on a lateral (In,Ga)N alloy gradient, in: Phys. Status Solidi A 216(14), 1900170:1-5 (2019) P. Schlupp P. Schlupp, H. von Wenckstern, M. Grundmann Electrical properties of vertical p-NiO/n-Ga2O3 and p-ZnCo2O4/n-Ga2O3 pn-heterodiodes, in: Phys. Status Solidi A 216(7), 1800729:1-6 (2019) Rüdiger Schmidt-Grund Rüdiger Schmidt-Grund, Tom Michalsky, Marcel Wille, Marius Grundmann Coherent polariton modes and lasing in ZnO nano- and microwires, in: Phys. Status Solidi B 256(4), 1800462:1-17 (2019) C.E. Precker C.E. Precker, J. Barzola-Quiquia, P.D. Esquinazi, M. Stiller, M.K. Chan, M. Jaime, Z. Zhang, M. Grundmann Record-Breaking Magnetoresistance at the Edge of a Microflake of Natural Graphite, in: Adv. Engin. Mater. 21(12), 1900991:1-6 (2019) Marius Grundmann Marius Grundmann Copper iodide - very transparent with many holes and no holes at the same time, in: BuildMoNa Annual Report 2017, p. 26-30 (2019) Robert Staacke Robert Staacke, Roger John, Max Kneiß, Marius Grundmann, Jan Meijer Highly transparent conductors for optical and microwave access to spin based quantum systems, in: NPJ Quantum Information 5, 98:1-5 (2019) Report Halbleiterphysik/Semiconductor Physics 2018, in: Universität Leipzig, M. Grundmann, ed. Max Kneiß Max Kneiß, Philipp Storm, Gabriele Benndorf, Marius Grundmann, Holger von Wenckstern Combinatorial material science and strain engineering enabled by pulsed laser deposition using radially segmented targets, in: ACS Comb. Sci. 20(11), 643-652 (2018) Max Kneiß Max Kneiß, Chang Yang, José Barzola-Quiquia, Gabriele Benndorf, Holger von Wenckstern, Pablo Esquinazi, Michael Lorenz, Marius Grundmann Suppression of grain boundary scattering in p-type transparent γ-CuI thin films due to interface tunneling currents, in: Adv. Mater. Interf. 5(6), 1701411:1-12 (2018) Alexander Jarjour Alexander Jarjour, Jon W. Cox, William T. Ruane, Holger von Wenckstern, Marius Grundmann, Leonard J. Brillson Single Metal Ohmic and Rectifying Contacts to ZnO Nanowires: A Defect Based Approach, in: Ann. Phys. 530(2), 1700335:1-6 (2018) Michael Lorenz Michael Lorenz, Stefan Hohenberger, Eduard Rose, Marius Grundmann Atomically stepped, pseudomorphic, corundum-phase (Al1-xGax)2O3 thin films (0 ≤ x < 0.08) grown on R-plane sapphire, in: Appl. Phys. Lett. 113(23), 231902:1-5 (2018) [Editor's Pick] Evgeny Krüger Evgeny Krüger, Vitaly Zviagin, Chang Yang, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann Temperature dependence of the dielectric function of thin film CuI in the spectral range (0.6-8.3) eV, in: Appl. Phys. Lett. 113(17), 172102:1-5 (2018) H. Modarresi H. Modarresi, E. Menéndez, V.V. Lazenka, N. Pavlovic, M. Bisht, M. Lorenz, C. Petermann, M. Grundmann, A. Hardy, M.K. Van Bael, M.J. Van Bael, A. Vantomme, K. Temst Morphology-induced spin frustration in granular BiFeO3 thin films: Origin of the magnetic vertical shift, in: Appl. Phys. Lett. 113(14), 142402:1-5 (2018) Sophie Vogt Sophie Vogt, Holger von Wenckstern, Marius Grundmann MESFETs and inverters based on amorphous zinc-tin-oxide thin films prepared at room temperature, in: Appl. Phys. Lett. 113(13), 133501:1-5 (2018) Hantian Gao Hantian Gao, Shreyas Muralidharan, Nicolas Pronin, Md Rezaul Karim, Susan M. White, Thaddeus Asel, Geoffrey Foster, Sriram Krishnamoorthy, Siddharth Rajan, Lei R. Cao, Masataka Higashiwaki, Holger von Wenckstern, Marius Grundmann, Hongping Zhao, David C. Look, Leonard J. Brillson Optical signatures of deep level defects in Ga2O3, in: Appl. Phys. Lett. 112(24), 242102:1-5 (2018) M. Grundmann M. Grundmann Elastic Theory of Pseudomorphic Monoclinic and Rhombohedral Heterostructures, in: J. Appl. Phys. 124(18), 185302:1-10 (2018) [invited] V. Prozheeva V. Prozheeva, R. Hölldobler, H. von Wenckstern, M. Grundmann, F. Tuomisto Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1-x)2O3 thin films, in: J. Appl. Phys. 123(12), 125705:1-6 (2018) L.J. Brillson L.J. Brillson, G.M. Foster, J. Cox, W.T. Ruane, A.B. Jarjour, H. Gao, H. von Wenckstern, M. Grundmann, B. Wang, D.C. Look, A. Hyland, M.W. Allen Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices, in: J. Electr. Mat. 47(9), 4980-4986 (2018) Agathe Bouvet-Marchand Agathe Bouvet-Marchand, Alain Graillot, János Volk, Rolanas Dauksevicius, Chris Sturm, Elise Saoutieff, Antoine Viana, Björn Christian, Vadim Lebedev, János Radó, István E. Lukács, Marius Grundmann, David Grosso, Cedric Loubat Design of UV-Crosslinked Polymeric Thin Layers for Encapsulation of Piezoelectric ZnO Nanowires for Pressure-Based Fingerprint Sensors , in: J. Mater. Chem. C 6(3), 605-613 (2018) Christian Laube Christian Laube, Jessica Hellweg, Chris Sturm, Jan Griebel, Marius Grundmann, Axel Kahnt, Bernd Abel Photo-Induced-Heating of Graphitised Nanodiamonds monitored by the Raman-Diamond-Peak, in: J. Phys. Chem. C 122(44), 25685-25691 (2018) Tom Michalsky Tom Michalsky, Marcel Wille, Marius Grundmann, Rüdiger Schmidt-Grund Tunable and switchable lasing in a ZnO microwire cavity at room temperature, in: J. Phys. D: Appl. Phys. 51(42), 425305:1-6 (2018) Kerstin Brachwitz Kerstin Brachwitz, Tammo Böntgen, Jörg Lenzner, Kartik Ghosh, Michael Lorenz, Marius Grundmann Evolution of magnetization in epitaxial Zn1-xFexOz thin films (0 ≤ x ≤ 0.66) grown by pulsed laser deposition, in: J. Phys. D: Appl. Phys. 51(24), 245003:1-7 (2018) S. Hohenberger S. Hohenberger, V. Lazenka, K. Temst, C. Patzig, S. Selle, T. Höche, M. Grundmann, M. Lorenz Effect of double layer thickness on magnetoelectric coupling in multiferroic BaTiO3-Bi0.95Gd0.05FeO3 multilayers, in: J. Phys. D: Appl. Phys. 51(18), 184002:1-9 (2018) Jonathan W. Cox Jonathan W. Cox, Geoffrey M. Foster, Alexander Jarjour, Holger von Wenckstern, Marius Grundmann, Leonard J. Brillson Defect Manipulation to Control ZnO Micro-/Nanowire - Metal Contacts, in: Nano Lett. 18(11), 6974-6980 (2018) T. Michalsky T. Michalsky, M. Wille, M. Grundmann, R. Schmidt-Grund Spatiotemporal evolution of coherent polariton modes in ZnO microwire cavities, in: Nano Lett. 18(11), 6820-6825 (2018) J.K. Jochum J.K. Jochum, M. Lorenz, H.P. Gunnlaugsson, C. Patzig, T. Höche, M. Grundmann, A. Vantomme, K. Temst, M.J. Van Bael, V. Lazenka Impact of magnetization and hyperfine field distribution on high magnetoelectric coupling strength in BaTiO3-BiFeO3 multilayers, in: Nanoscale 10(12), 5574-5580 (2018) Thorsten Schulz Thorsten Schulz, Sofie Bitter, Peter Schlupp, Holger von Wenckstern, Nobert Koch, Marius Grundmann The influence of oxygen deficiency on the rectifying behavior of transparent semiconducting oxide-metal interfaces, in: Phys. Rev. Appl. 9(6), 064001:1-8 (2018) [Editor's Suggestion] S. Prucnal S. Prucnal, Y. Berencén, M. Wang, J. Grenzer, M. Voelskow, R. Hübner, Y. Yamamoto, A. Scheit, F. Bärwolf, V. Zviagin, R. Schmidt-Grund, M. Grundmann, J. Żuk, M. Turek, A. Droździel, K. Pyszniak, R. Kudrawiec, M.P. Polak, L. Rebohle, W. Skorupa, M. Helm, S. Zhou Strain and band gap engineering in GeSn alloys via P doping, in: Phys. Rev. Appl. 10(6), 064055:1-11 (2018) M. Grundmann M. Grundmann Monolithic Forward-looking Photodetector for Use as Ultra-Compact Wavemeter with Wide Spectral Range, in: Phys. Status Solidi A 215(24), 1800651:1-5 (2018) Tanja Jawinski Tanja Jawinski, Leonard A. Wägele, Roland Scheer, Marius Grundmann, Holger von Wenckstern Properties of In2S3-based pin-heterojunctions, in: Phys. Status Solidi A 215(11), 1700827:1-6 (2018) Rainer Pickenhain Rainer Pickenhain, Matthias Schmidt, Holger von Wenckstern, Gabriele Benndorf, Andreas Pöppl, Rolf Böttcher, Marius Grundmann Negative U Properties of the Deep Level E3 in ZnO, in: Phys. Status Solidi B 255(7), 1700670:1-16 (2018) Daniel Splith Daniel Splith, Stefan Müller, Holger von Wenckstern, Marius Grundmann Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films, in: Proc. SPIE 10533, 105330C:1-8 (2018), David J. Rogers, David C. Look, Ferechteh H. Teherani, eds. Tilo Meister Tilo Meister, Frank Ellinger, Johann W. Bartha, Manfred Berroth, Joachim Burghartz, Martin Claus, Lothar Frey, Alessio Gagliardi, Marius Grundmann, Jan Hesselbarth, Hagen Klauk, Karl Leo, Paolo Lugli, Stefan Mannsfeld, Yiannos Manoli, Renato Negra, Daniel Neumaier, Ullrich Pfeiffer, Thomas Riedl, Susanne Scheinert, Ullrich Scherf, Andreas Thiede, Gerhard Troester, Martin Vossiek, Robert Weigel, Christian Wenger, Golzar Alavi, Markus Becherer, Carlos Alvarado Chavarin, Mohammed Darwish, Martin Ellinger, Chun-Yu Fan, Martin Fritsch, Frank Grotjahn, Marco Gunia, Katherina Haase, Philipp Hillger, Koichi Ishida, Michael Jank, Stefan Knobelspies, Matthias Kuhl, Grzegorz Lupina, Shabnam Mohammadi Naghadeh, Niko Münzenrieder, Sefa Özbek, Mahsa Rasteh, Giovanni A. Salvatore, Daniel Schrüfer, Carsten Strobel, Manuel Theisen, Christian Tückmantel, Holger von Wenckstern, Zhenxing Wang, Zhipeng Zhang Program FFlexCom , in: 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), p. 1-4 (2018) Steffen Richter Steffen Richter, Jesús Zúñiga-Pérez, Christiane Deparis, Lukas Trefflich, Heinrich-Gregor Zirnstein, Tom Michalsky, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund Exceptional Points in the Dispersion of Optically Anisotropic Planar Microcavities, in: IEEE Photonics Society Summer Topical Meeting Series, p. 195-196 (2018), ISBN 978-1-5386-4076-0 Tom Michalsky Tom Michalsky, Marcel Wille, Evgeny Krüger, Chris Sturm, Marius Grundmann, Rüdiger Schmidt-Grund Coherent polariton states and lasing in ZnO nano- and microstructures, in: IEEE Photonics Society Summer Topical Meeting Series, p. 171-172 (2018), ISBN 978-1-5386-4076-0 Report Halbleiterphysik/Semiconductor Physics 2017, in: Universität Leipzig, M. Grundmann, ed. Report of The Physics Institutes of Universität Leipzig 2017, in: Universität Leipzig, M. Grundmann, ed. S. Bitter S. Bitter, P. Schlupp, H. von Wenckstern, M. Grundmann The Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc-Tin-Oxide with Various Cation Composition, in: ACS Appl. Mater. Interfaces 9(31), 26574-26581 (2017) Michael Lorenz Michael Lorenz, Dietmar Hirsch, Christian Patzig, Thomas Höche, Stefan Hohenberger, Holger Hochmuth, Vera Lazenka, Kristiaan Temst, Marius Grundmann Correlation of interface impurities and chemical gradients with magnetoelectric coupling strength in multiferroic BiFeO3-BaTiO3 superlattices, in: ACS Appl. Mater. Interfaces 9(22), 18956-18965 (2017) C. Sturm C. Sturm, R. Schmidt-Grund, V. Zviagin, M. Grundmann Temperature dependence of the dielectric tensor of monoclinic dielectric Ga2O3 single crystals in the spectral range 0.5-8.5 eV, in: Appl. Phys. Lett. 111(8), 082102:1-4 (2017) Marcel Wille Marcel Wille, Evgeny Krüger, Steffen Blaurock, Vitaly Zviagin, Rafael Deichsel, Gabriele Benndorf, Lukas Trefflich, Volker Gottschalch, Harald Krautscheid, Rüdiger Schmidt-Grund, Marius Grundmann Lasing in cuprous iodide microwires, in: Appl. Phys. Lett. 111(3), 031105:1-5 (2017) Michael Lorenz Michael Lorenz, Jose Barzola-Quiquia, Chang Yang, Christian Patzig, Thomas Höche, Pablo Esquinazi, Marius Grundmann, Haoming Wei Charge transfer-induced magnetic exchange bias and electron localization in (111)- and (001)-oriented LaNiO3/LaMnO3 superlattices, in: Appl. Phys. Lett. 110(10), 102403:1-5 (2017) Vera Lazenka Vera Lazenka, Michael Lorenz, Hiwa Modarresi, Johanna K. Jochum, Haraldur P. Gunnlaugsson, Marius Grundmann, Margriet J. Van Bael, Kristiaan Temst, André Vantomme Interface induced out-of-plane magnetic anisotropy in magnetoelectric BiFeO3-BaTiO3 superlattices, in: Appl. Phys. Lett. 110(9), 092902:1-5 (2017) C. Sturm C. Sturm, M. Wille, J. Lenzner, S. Khujanov, M. Grundmann Non-linear optical deformation potentials in uniaxially strained ZnO microwires, in: Appl. Phys. Lett. 110(6), 062103:1-4 (2017) Yogesh Kumar Yogesh Kumar, Israel Lorite, Michael Lorenz, Pablo D. Esquinazi, Marius Grundmann Effect of annealing on the magnetic properties of zinc ferrite thin films, in: arxiv: 1702.06033 (2017) Krzysztof Dorywalski Krzysztof Dorywalski, Nathalie Lemée, Bohdan Andriyevsky, Rüdiger Schmidt-Grund, Marius Grundmann, Michał Piasecki, Marie Bousquet, Tomasz Krzyżyński Optical properties of epitaxial Na0.5Bi0.5TiO3 lead-free piezoelectric thin films: Ellipsometric and theoretical studies, in: Appl. Surf. Sci. 421(B), 367-372 (2017) Martin Welke Martin Welke, Kerstin Brachwitz, Michael Lorenz, Marius Grundmann, Karl-Michael Schindler, Angelika Chasse, Reinhard Denecke Structure and cation distribution in (Mn0.5Zn0.5)Fe2O4 thin films on SrTiO3(001), in: J. Appl. Phys. 121(22), 225305:1-7 (2017) Volker Gottschalch Volker Gottschalch, Steffen Blaurock, Gabriele Benndorf, Jörg Lenzner, Marius Grundmann, Harald Krautscheid Copper Iodide synthesized by iodization of Cu-films and deposited using MOCVD, in: J. Cryst. Growth 471, 21-28 (2017) Michael Lorenz Michael Lorenz, Haoming Wei, Florian Jung, Stefan Hohenberger, Holger Hochmuth, Marius Grundmann Two-dimensional Frank - van der Merwe growth of functional oxide and nitride thin film superlattices by pulsed laser deposition, in: J. Mat. Res. 32(21), 3936-3946 (2017) Haoming Wei Haoming Wei, Chang Yang, Jose Luis Barzola-Quiquia, Martin Welke, Reinhard Denecke, Christian Patzig, Thomas Höche, Pablo Esquinazi, Marius Grundmann, Michael Lorenz Ferromagnetic phase transition and single-gap type electrical conductivity of epitaxial LaMnO3/LaAlO3 superlattices, in: J. Phys. D: Appl. Phys. 50(43), 43LT02:1-6 (2017) L. Vines L. Vines, C. Bhoodoo, H. von Wenckstern, M. Grundmann Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level, in: J. Phys. D: Appl. Phys. 30(2), 025502:1-6 (2017) C. Yang C. Yang, D. Souchay, M. Kneiß, M. Bogner, H. M. Wei, M. Lorenz, O. Oeckler, G. Benstetter, Y.Q. Fu, M. Grundmann Transparent Flexible Thermoelectric Material Based on Non-toxic Earth-Abundant p-Type Copper Iodide Thin Film, in: Nature Commun. 8, 16076:1-7 (2017) Maximilian Zapf Maximilian Zapf, Robert Röder, Karl Winkler, Lisa Kaden, Johannes Greil, Marcel Wille, Marius Grundmann, Rüdiger Schmidt-Grund, Alois Lugstein, Carsten Ronning Dynamical Tuning of Nanowire Lasing Spectra, in: Nano Lett. 17(11), 6637-6643 (2017) Alexander Shkurmanov Alexander Shkurmanov, Chris Sturm, Helena Franke, Jörg Lenzner, Marius Grundmann Low temperature PLD-growth of ultrathin ZnO nanowires by using ZnxAl1-xO and ZnxGa1-xO seed layers, in: Nanoscale Res. Lett. 12, 134:1-7 (2017) A. de Pablos Martín A. de Pablos Martín, M. Lorenz, M. Grundmann, Th. Höche Laser Welding of Fused Silica Glass with Sapphire Using a Non- Stoichiometric, Fresnoitic Ba2TiSi2O8, in: Optics & Laser Technol. 92, 85-94 (2017) Steffen Richter Steffen Richter, Tom Michalsky, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund Erratum: Exceptional points in anisotropic planar microcavities, in: Phys. Rev. A 96(5), 059902E:1-2 (2017) Steffen Richter Steffen Richter, Tom Michalsky, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund Exceptional points in anisotropic planar microcavities, in: Phys. Rev. A 95(2), 023836:1-9 (2017) P. Schlupp P. Schlupp, H. von Wenckstern, M. Grundmann Schottky barrier diodes based on room temperature fabricated amorphous zinc tin oxide thin film, in: Phys. Status Solidi A 214(10), 1700210:1-8 (2017) M. Grundmann M. Grundmann Strain in Pseudomorphic Monoclinic Ga2O3-based Heterostructures, in: Phys. Status Solidi B 254(9), 1700134:1-7 (2017) Marius Grundmann Marius Grundmann, Chris Sturm, Christian Kranert, Steffen Richter, Rüdiger Schmidt-Grund, Christianne Deparis, Jesús Zúñiga-Pérez Optically Anisotropic Media: New Approaches to the Dielectric Function, Singular Axes, Raman Scattering Intensities and Microcavity Modes, in: Phys. Status Solidi RRL 11(1), 1600295:1-19 (2017) Marius Grundmann Marius Grundmann, Steffen Richter, Tom Michalsky, Chris Sturm, Jesús Zúñiga-Pérez, Rüdiger Schmidt-Grund Exceptional points in anisotropic photonic structures: From non-Hermitian physics to possible device applications, in: Proc. SPIE 10105, 101050K:1-8 (2017), Ferechteh H. Teherani, David C. Look, David J. Rogers, eds. Stefan Müller Stefan Müller, Holger von Wenckstern, Florian Schmidt, Daniel Splith, Heiko Frenzel, Marius Grundmann Method of choice for fabrication of high-quality β-gallium oxide-based Schottky diodes, in: Semic. Sci. Technol. 32(6), 065013:1-8 (2017) T. Lühmann T. Lühmann, R. Wunderlich, R. Schmidt-Grund, J. Barzola-Quiquia, P. Esquinazi, M. Grundmann, J. Meijer Investigation of the graphitization process of ion-beam irradiated diamond using ellipsometry, Raman spectroscopy and electrical transport measurements, in: Carbon 121, 512-517 (2017) Yogesh Kumar Yogesh Kumar, Israel Lorite, Michael Lorenz, Pablo Esquinazi, Marius Grundmann Effect of annealing on the magnetic properties of zinc ferrite thin films, in: Mater. Lett. 195, 89-91 (2017) H.-E. Zschau H.-E. Zschau, M. Schütze, M.C. Galetz, B.M. Gleeson, S. Neve, M. Lorenz, M. Grundmann Surface Chemistry Evolution of F-doped Ni-base Superalloy upon Heat Treatment, in: Materials and Corrosion 68(2), 220-227 (2017) Report Halbleiterphysik/Semiconductor Physics 2016, in: Universität Leipzig, M. Grundmann, ed. Report of The Physics Institutes of Universität Leipzig 2016, in: Universität Leipzig, M. Grundmann, ed. M. Grundmann M. Grundmann Felix Bloch (1905-1983) in Leipzig (in English), in: WWW homepage of Felix Bloch Institute for Solid State Physics of Universität Leipzig:1-4 M. Grundmann M. Grundmann Felix Bloch (1905-1983) in Leipzig (in German), in: WWW-Seite des Felix-Bloch-Institut für Festkörperphysik der Universität Leipzig:1-4 Marius Grundmann Marius Grundmann The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 3rd edition, in: (Springer, Heidelberg, 2016), ISBN 978-3-319-23879-1 Nikolay Petkov Nikolay Petkov, János Volk, Róbert Erdélyi, István Endre Lukács, Takahiro Nagata, Chris Sturm, Marius Grundmann Contacting ZnO individual crystal facets by direct write lithography, in: ACS Appl. Mater. Interfaces 8(36), 23891-23898 (2016) Sofie Bitter Sofie Bitter, Peter Schlupp, Michael Bonholzer, Holger von Wenckstern, Marius Grundmann Influence of the cation ratio on optical and electrical properties of zinc-tin-oxide thin films from pulsed-laser deposition, in: ACS Comb. Sci. 18(4), 188-194 (2016) F.J. Klüpfel F.J. Klüpfel, H. von Wenckstern, M. Grundmann Ring Oscillators based on ZnO Channel JFETs and MESFETs, in: Adv. Electron. Mater. 2(7), 1500431:1-5 (2016) Michael Lorenz Michael Lorenz, Vera Lazenka, Peter Schwinkendorf, Margriet J. Van Bael, André Vantomme, Kristiaan Temst, Marius Grundmann, Thomas Höche Epitaxial coherence at interfaces as origin of high magnetoelectric coupling in multiferroic BaTiO3 - BiFeO3 superlattices, in: Adv. Mater. Interf. 3(11), 1500822:1-7 (2016) M. Stiller M. Stiller, J. Barzola-Quiquia, P. Esquinazi, D. Spemann, J. Meijer, M. Lorenz, M. Grundmann Strong out-of-plane magnetic anisotropy in ion irradiated anatase TiO2 thin films, in: AIP Adv. 6(12), 125009:1-13 (2016) Alexander Shkurmanov Alexander Shkurmanov, Chris Sturm, Jörg Lenzner, Guy Feuillet, Florian Tendille, Philippe De Mierry, Marius Grundmann Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates, in: AIP Adv. 6(9), 095013:1-5 (2016) Haoming Wei Haoming Wei, Marius Grundmann, Michael Lorenz Confinement-driven metal-insulator transition and polarity-controlled conductivity of epitaxial LaNiO3/ LaAlO3 (111) superlattices, in: Appl. Phys. Lett. 109(8), 082108:1-5 (2016) M. Wille M. Wille, T. Michalsky, E. Krüger, M. Grundmann, R. Schmidt-Grund Absorptive lasing mode suppression in ZnO nano- and microcavities, in: Appl. Phys. Lett. 109(6), 061102:1-4 (2016) I. Lorite I. Lorite, Y. Kumar, P. Esquinazi, S. Friedländer, A. Pöppl, T. Michalsky, J. Meijer, M. Grundmann, T. Mayer Photo-enhanced magnetization in Fe-doped ZnO nanowires, in: Appl. Phys. Lett. 109(1), 012401:1-4 (2016) Jesús Zúñiga-Pérez Jesús Zúñiga-Pérez, Lars Kappei, Christiane Deparis, François Reveret, Marius Grundmann, Esther de Prado, Omar Jamadi, Joel Leymarie, Sébastien Chenot, Mathieu Leroux Homoepitaxial nonpolar (10-10) ZnO/ZnMgO heterostructures: from single layers to monolithic Bragg reflectors and optical microcavities, in: Appl. Phys. Lett. 108(25), 251904:1-5 (2016) Zhipeng Zhang Zhipeng Zhang, Holger von Wenckstern, Jörg Lenzner, Marius Grundmann Wavelength-selective ultraviolet (Mg,Zn)O photodiodes: Tuning of parallel composition gradients with oxygen pressure, in: Appl. Phys. Lett. 108(24), 243503:1-5 (2016) V. Zviagin V. Zviagin, Y. Kumar, I. Lorite, P. Esquinazi, M. Grundmann, R. Schmidt-Grund Ellipsometric Investigation of ZnFe2O4 Thin Films in Relation to Magnetic Properties, in: Appl. Phys. Lett. 108(13), 131901:1-4 (2016) Zhipeng Zhang Zhipeng Zhang, Holger von Wenckstern, Jörg Lenzner, Michael Lorenz, Marius Grundmann Visible-blind and solar-blind ultraviolet photodiodes based on (InxGa1-x)2O3, in: Appl. Phys. Lett. 108(12), 123503:1-5 (2016) Rami Khazaka Rami Khazaka, Marius Grundmann, Marc Portail, Philippe Vennéguès, Marcin Zielinski, Thierry Chassagne, Daniel Alquier, Jean-François Michaud Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C SiC(001), in: Appl. Phys. Lett. 108(1), 011608:1-4 (2016) Steffen Richter Steffen Richter, Tom Michalsky, Chris Sturm, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund Exceptional points in anisotropic planar microcavities, in: arxiv: 1609.07653 (2016) Christian Kranert Christian Kranert, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann Raman tensor elements of β-Ga2O3, in: arxiv: 1606.07409 (2016) I. Lorite I. Lorite, Y. Kumar, P. Esquinazi, S. Friedländer, A. Pöppl, T. Michalsky, J. Meijer, M. Grundmann, T. Meyer, I. Estrela-Lopis Photo-enhanced magnetization in Fe-doped ZnO nanowires, in: arxiv: 1606.06955 (2016) Marcus Jenderka Marcus Jenderka, Steffen Richter, Michael Lorenz, Marius Grundmann Fundamental absorption edges in heteroepitaxial Y1Bi1O3 thin films, in: arxiv: 1606.03945 (2016) Tom Michalsky Tom Michalsky, Helena Franke, Robert Buschlinger, Ulf Peschel, Marius Grundmann, Rüdiger Schmidt-Grund Coexistence of strong and weak coupling in ZnO nanowire cavities, in: arxiv: 1602.06804 (2016) Chris Sturm Chris Sturm, Rüdiger Schmidt-Grund, Christian Kranert, Jürgen Furthmüller, Friedhelm Bechstedt, Marius Grundmann Dipole Analysis of the Dielectric Function of Colour Dispersive Materials: Application to Monoclinic Ga2O3, in: arxiv: 1601.07892 (2016) M. Wille M. Wille, C. Sturm, T. Michalsky, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann Carrier density driven material dynamics of lasing ZnO Nanowires, in: arxiv: 1601.03866 (2016) Marius Grundmann Marius Grundmann, Chris Sturm The Singular Optical Axes in Biaxial Crystals and Analysis of Their Spectral Dispersion Effects in β-Ga2O3, in: arxiv: 1601.03760:1-7 (2016) Tom Michalsky Tom Michalsky, Helena Franke, Robert Buschlinger, Ulf Peschel, Marius Grundmann, Rüdiger Schmidt-Grund Coexistence of strong and weak coupling in ZnO nanowire cavities, in: Eur. Phys. J. Appl. Phys. 74(3), 30502:1-10 (2016) Abdurashid Mavlonov Abdurashid Mavlonov, Steffen Richter, Holger von Wenckstern, Rüdiger Schmidt-Grund, Michael Lorenz, Marius Grundmann Temperature dependent self-compensation in Al and Ga-doped Mg0.05Zn0.95O thin films grown by pulsed laser deposition, in: J. Appl. Phys. 120(20), 205703:1-6 (2016) M. Jenderka M. Jenderka, S. Richter, M. Lorenz, M. Grundmann Fundamental absorption edges in heteroepitaxial YBiO3 thin films, in: J. Appl. Phys. 120(12), 125702:1-4 (2016) Kazuki Narushima Kazuki Narushima, Yoshito Ashizawa, Kerstin Brachwitz, Holger Hochmuth, Michael Lorenz, Marius Grundmann, Katsuji Nakagawa Magnetic activity of surface plasmon resonance using dielectric magnetic materials fabricated on quartz glass substrate, in: Jpn. J. Appl. Phys. 55(7S3), 07MC05:1-4 (2016) M. Lorenz M. Lorenz, M.S. Ramachandra Rao, T. Venkatesan, E. Fortunato, P. Barquinha, R. Branquinho, D. Salgueiro, R. Martins, E. Carlos, A. Liu, F.K. Shan, M. Grundmann, H. Boschker, J. Mukherjee, M. Priyadarshini, N. DasGupta, D.J. Rogers, F.H. Teherani, E.V. Sandana, P. Bove, K. Rietwyk, A. Zaban, A. Veziridis, A. Weidenkaff, M. Muralidhar, M. Murakami, S. Abel, J. Fompeyrine, J. Zúñiga-Pérez, R. Ramesh, N.A. Spaldin, S. Ostanin, V. Borisov, I. Mertig, V. Lazenka, G. Srinivasan, W. Prellier, M. Uchida, M. Kawasaki, R. Pentcheva, P. Gegenwart, F. Miletto Granozio, J. Fontcuberta, N. Pryds The 2016 oxide electronic materials and oxide interfaces roadmap (ch. 3, M. Grundmann: Bipolar oxide devices), in: J. Phys. D: Appl. Phys. 49(43), 433001:1-53 (2016) H. Modarresi H. Modarresi, V. Lazenka, E. Menéndez, M. Lorenz, M. Bisht, A. Volodin, C. Van Haesendonck, M. Grundmann, M. J. Van Bael, K. Temst, A. Vantomme Induced ferromagnetism and magnetoelectric coupling in ion-beam synthesized BiFeO3-CoFe2O4 nanocomposite thin films, in: J. Phys. D: Appl. Phys. 49(32), 325302:1-6 (2016) Marius Grundmann Marius Grundmann, Fabian Klüpfel, Robert Karsthof, Peter Schlupp, Friedrich-Leonhard Schein, Daniel Splith, Chang Yang, Sofie Bitter, Holger von Wenckstern Oxide Bipolar Electronics: Materials, Devices and Circuits, in: J. Phys. D: Appl. Phys. 49(21), 213001:1-25 (2016) [Topical Review] R. Karsthof R. Karsthof, H. von Wenckstern, M. Grundmann Semi-transparent ZnO-based UV-active solar cells: Analysis of electrical loss mechanisms, in: J. Vac. Sci. Technol. B 34(4), 04J107:1-8 (2016) Michael Lorenz Michael Lorenz, Gerald Wagner, Vera Lazenka, Peter Schwinkendorf, Michael Bonholzer, Margriet J. Van Beal, André Vantomme, Kristiaan Temst, Oliver Oeckler, Marius Grundmann Correlation of high magnetoelectric coupling with oxygen vacancy superstructure in epitaxial multiferroic BaTiO3-BiFeO3 composite thin films , in: Materials 9(1), 44:1-13 (2016) Araceli de Pablos-Martín Araceli de Pablos-Martín, Sebastian Tismer, Falk Naumann, Michael Krause, Michael Lorenz, Marius Grundmann, Thomas Höche Evaluation of the Bond Quality of Laser-Joined Sapphire Wafers using a Fresnoite-Glass Sealant, in: Microsyst. Technol. 22(1), 207-214 (2016) Leonard Brillson Leonard Brillson, William T. Ruane, Hantian Gao, Yuanyao Zhang, Jian Luo, Holger von Wenckstern, Marius Grundmann Spatially-Resolved Cathodoluminescence Spectroscopy of ZnO Defects, in: Mat. Sci. Semic. Process. 57, 197-209 (2016) W.T. Ruane W.T. Ruane, K.M. Johansen, K. Leedy, D.C. Look, H. von Wenckstern, M. Grundmann, L.J. Brillson Defect Segregation and Optical Emission in ZnO Nano- and Microwires, in: Nanoscale 8(14), 7631-7637 (2016) M. Wille M. Wille, C. Sturm, T. Michalsky, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann Carrier density driven material dynamics of lasing ZnO Nanowires, in: Nanotechnology 27(22), 225702:1-7 (2016) A. de Pablos-Martin A. de Pablos-Martin, S. Tismer, G. Benndorf, M. Mittag, M. Lorenz, M. Grundmann, Th. Höche Laser soldering of sapphire substrates using a BaTiAl6O12 thin-film glass sealant , in: Optics & Laser Technol. 81, 153-161 (2016) A. de Pablos-Martin A. de Pablos-Martin, G. Benndorf, Sebastian Tismer, M. Mittag, A. Cismak, M. Lorenz, M. Grundmann, Th. Höche Laser-Welded Fused Silica Substrates Using a Luminescent Fresnoite-Based Sealant, in: Optics & Laser Technol. 80, 176-185 (2016) Chang Yang Chang Yang, Max Kneiß, Michael Lorenz, Marius Grundmann Room-temperature Synthesized Copper Iodide Thin Film as Degenerate p-Type Transparent Conducting Material with a Boosted Figure of Merit, in: PNAS 113(46), 12929-12933 (2016) Chris Sturm Chris Sturm, Marius Grundmann The Singular Optical Axes in Biaxial Crystals and Analysis of Their Spectral Dispersion Effects in β-Ga2O3, in: Phys. Rev. A 93(5), 053839:1-8 (2016) C. Sturm C. Sturm, R. Schmidt-Grund, C. Kranert, J. Furthmüller, F. Bechstedt, M. Grundmann Dipole analysis of the dielectric function of color dispersive materials: Application to monoclinic Ga2O3, in: Phys. Rev. B 94(3), 035148:1-11 (2016) Martin Thunert Martin Thunert, Alexander Janot, Helena Franke, Chris Sturm, Tom Michalsky, María Dolores Martín, Luis Viña, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund Cavity Polariton Condensate in a Disordered Environment, in: Phys. Rev. B 93(6), 064203:1-12 (2016) Christian Kranert Christian Kranert, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann Raman Tensor Formalism for Optically Anisotropic Crystals, in: Phys. Rev. Lett. 116(12), 127401:1-5 (2016) Robert Karsthof Robert Karsthof, Paul Räcke, Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann Semi-transparent n-ZnO/p-NiO UV solar cells, in: Phys. Status Solidi A 213(1), 30-37 (2016) Anna Reinhardt Anna Reinhardt, Heiko Frenzel, Holger von Wenckstern, Daniel Spemann, Marius Grundmann Electron transport mechanism in rf-sputtered amorphous zinc oxynitride thin films, in: Phys. Status Solidi A 213(7), 1767-1773 (2016) V. Zviagin V. Zviagin, P. Richter, T. Böntgen, M. Lorenz, M. Ziese, D.R.T. Zahn, G. Salvan, M. Grundmann, R. Schmidt-Grund Comparative Study of Optical and Magneto-Optical Properties of Normal, Disordered and Inverse Spinel Type Oxides, in: Phys. Status Solidi B 253(3), 429-436 (2016) Marius Grundmann Marius Grundmann, Jesús Zúñiga-Pérez Pseudomorphic ZnO-based heterostructures: from polar through all semipolar to nonpolar orientations, in: Phys. Status Solidi B 253(2), 351-360 (2016) Christian Kranert Christian Kranert, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann Raman tensor elements of β-Ga2O3, in: Sci. Rep. 6, 35964:1-9 (2016) Chang Yang Chang Yang, Max Kneiß, Friedrich-Leonhard Schein, Michael Lorenz, Marius Grundmann Room-temperature domain-epitaxy of copper iodide thin films for transparent CuI/ZnO heterojunctions with high rectification ratios larger than 109, in: Sci. Rep. 6, 21937:1-8 (2016) Marius Grundmann Marius Grundmann Don't mourn the losses , in: BuildMoNa Annual Report 2016, p. 26-29 (2016) Marius Grundmann Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE, in: JP 5897621 B2 (Japan Patent Office, 2016) Alexander Shkurmanov Alexander Shkurmanov, Chris Sturm, Holger Hochmuth, Marius Grundmann Growth kinetics of ultrathin ZnO Nanowires grown by Pulsed Laser Deposition, in: Proc. Eng. 168, 1156-1159 (2016) Report Halbleiterphysik/Semiconductor Physics 2015, in: Universität Leipzig, M. Grundmann, ed. Report of The Physics Institutes of Universität Leipzig 2015, in: Universität Leipzig, M. Grundmann, ed. Holger von Wenckstern Holger von Wenckstern, Daniel Splith, Anna Werner, Stefan Müller, Michael Lorenz, Marius Grundmann Properties of Schottky barrier diodes on (InxGa1-x)2O3 for 0.01 ≤ x ≤ 0.85 determined by using a combinatorial approach, in: ACS Comb. Sci. 17(12), 710-715 (2015) H. von Wenckstern H. von Wenckstern, D. Splith, S. Lanzinger, F. Schmidt, S. Müller, P. Schlupp, R. Karsthof, M. Grundmann pn-heterodiodes with n-type In2O3, in: Adv. Electron. Mater. 1(4), 1400026:1-6 (2015) P. Schlupp P. Schlupp, F.-L. Schein, H. von Wenckstern, M. Grundmann All Amorphous Oxide Bipolar Heterojunction Diodes from Abundant Metals, in: Adv. Electron. Mater. 1(1-2), 1400023:1-5 (2015) Sylvio Schubert Sylvio Schubert, Florian Schmidt, Holger von Wenckstern, Marius Grundmann, Karl Leo, Lars Müller-Meskamp Eclipse Pulsed Laser Deposition for Damage-Free Preparation of Transparent ZnO Electrodes on Top of Organic Solar Cells, in: Adv. Funct. Mater. 25(27), 4321-4327 (2015) Stefan Müller Stefan Müller, Holger von Wenckstern, Florian Schmidt, Daniel Splith, Friedrich-Leonhard Schein, Heiko Frenzel, Marius Grundmann Comparison of Schottky contacts on β-gallium oxide thin films and bulk crystals, in: Appl. Phys. Expr. 8(12), 121102:1-4 (2015) Robert Schewski Robert Schewski, Günter Wagner, Michele Baldini, Daniela Gogova, Zbigniew Galazka, Tobias Schulz, Thilo Remmele, Toni Markurt, Holger von Wenckstern, Marius Grundmann, Oliver Bierwagen, Patrick Vogt, Martin Albrecht Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001), in: Appl. Phys. Expr. 8(1), 011101:1-4 (2015) Steffen Richter Steffen Richter, Tom Michalsky, Lennart Fricke, Chris Sturm, Helena Franke, Marius Grundmann, Rüdiger Schmidt-Grund Maxwell consideration of polaritonic quasi-particle Hamiltonians in multi-level systems, in: Appl. Phys. Lett. 107(23), 231104:1-5 (2015) Vera Lazenka Vera Lazenka, Michael Lorenz, Hiwa Modarresi, Manisha Bisht, Rudolf Rüffer, Michael Bonholzer, Marius Grundmann, Margriet J. Van Bael, André Vantomme, Kristiaan Temst Magnetic spin structure and magnetoelectric coupling in BiFeO3-BaTiO3 multilayer, in: Appl. Phys. Lett. 106(8), 082904:1-4 (2015) Haoming Wei Haoming Wei, Marcus Jenderka, Michael Bonholzer, Marius Grundmann, Michael Lorenz Modeling the conductivity around the dimensionality-controlled metal-insulator transition in LaNiO3/LaAlO3 (100) superlattices, in: Appl. Phys. Lett. 106(4), 042103:1-5 (2015) F.J. Klüpfel F.J. Klüpfel, H. von Wenckstern, M. Grundmann Low Frequency Noise of ZnO based MESFETs, in: Appl. Phys. Lett. 106(3), 033502:1-4 (2015) Michael Lorenz Michael Lorenz, Gerald Wagner, Vera Lazenka, Peter Schwinkendorf, Hiwa Modarresi, Margriet J. Van Bael, André Vantomme, Kristiaan Temst, Oliver Oeckler, Marius Grundmann Correlation of magnetoelectric coupling in multiferroic BaTiO3-BiFeO3 superlattices with oxygen vacancies and antiphase octahedral rotations, in: Appl. Phys. Lett. 106(1), 012905:1-5 (2015) Chris Sturm Chris Sturm, Jürgen Furthmüller, Friedhelm Bechstedt, Rüdiger Schmidt-Grund, Marius Grundmann Dielectric tensor of monoclinic Ga2O3 single crystals in the spectral range 0.5-8.5 eV, in: APL Mater. 3(10), 106106:1-9 (2015) Chris Sturm Chris Sturm, Jürgen Furthmüller, Friedhelm Bechstedt, Rüdiger Schmidt-Grund, Marius Grundmann Dielectric tensor of monoclinic Ga2O3 single crystals in the spectral range 0.5-8.5eV, in: arxiv: 1507.05401 (2015) Vitaly Zviagin Vitaly Zviagin, Peter Richter, Tammo Böntgen, Michael Lorenz, Michael Ziese, Dietrich R.T. Zahn, Georgeta Salvan, Marius Grundmann, Rüdiger Schmidt-Grund Comparative Study of Optical and Magneto-Optical Properties of Normal, Disordered and Inverse Spinel Type Oxides, in: arxiv: 1505.04664 (2015) I. Lorite I. Lorite, C. Zandalazini, P. Esquinazi, D. Spemann, S. Friedländer, A. Pöppl, T. Michalsky, M. Grundmann, J. Vogt, J. Meijer, S.P. Heluani, H. Ohldag, W.A. Adeagbo, S.K. Nayak, W. Hergert, A. Ernst, M. Hoffmann Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires, in: arxiv: 1504.08230 (2015) Steffen Richter Steffen Richter, Stefan G. Ebbinghaus, Marius Grundmann, Rüdiger Schmidt-Grund Antiferromagnetic phase transition in the temperature-dependent NIR-VUV dielectric function of hexagonal YMnO3, in: arxiv: 1503.04043 (2015) T. Michalsky T. Michalsky, H. Franke, C. Sturm, M. Grundmann, R. Schmidt-Grund Discrete relaxation of exciton-polaritons in an inhomogeneous potential, in: arxiv: 1501.02644 (2015) C.P. Dietrich C.P. Dietrich, R. Schmidt-Grund, T. Michalsky, M. Lange, M. Grundmann Room-temperature condensation in whispering gallery microresonators assisted by longitudinal optical phonons, in: arxiv: 1501.01255:1-11 (2015) Fabian Johannes Klüpfel Fabian Johannes Klüpfel, Agnes Holtz, Friedrich-Leonhard Schein, Holger von Wenckstern, Marius Grundmann All-Oxide Inverters Based On ZnO Channel JFETs With Amorphous ZnCo2O4 Gates, in: IEEE Transact. Electr. Dev. 62(12), 4004-4008 (2015) R. Karsthof R. Karsthof, H. von Wenckstern, M. Grundmann Transparent JFETs Based on p-NiO/n-ZnO Heterojunctions, in: IEEE Transact. Electr. Dev. 62(12), 3999-4003 (2015) R. Schmidt-Grund R. Schmidt-Grund, C. Kranert, H. von Wenckstern, V. Zviagin, M. Grundmann Dielectric function in the spectral range (0.5-8.5)eV of an (AlxGa1-x)2O3 thin film with continuous composition spread, in: J. Appl. Phys. 117(16), 165307:1-7 (2015) Christian Kranert Christian Kranert, Marcus Jenderka, Jörg Lenzner, Michael Lorenz, Holger von Wenckstern, Rüdiger Schmidt-Grund, Marius Grundmann Lattice parameters and Raman-active phonon modes of β-(AlxGa1-x)2O3, in: J. Appl. Phys. 117(12), 125703:1-6 (2015) Marcus Jenderka Marcus Jenderka, Rüdiger Schmidt-Grund, Marius Grundmann, Michael Lorenz Electronic excitations and structure of Li2IrO3 thin films grown on ZrO2:Y (001) substrates, in: J. Appl. Phys. 117(2), 025304:1-5 (2015) Rolf Böttcher Rolf Böttcher, Michael Lorenz, Andreas Pöppl, Daniel Spemann, Marius Grundmann Local zinc blende coordination in heteroepitaxial wurtzite Zn1-xMgxO:Mn thin films with 0.01 ≤ x ≤ 0.04 identified by electron paramagnetic resonance, in: J. Mater. Chem. C 3(45), 11918-11929 (2015) I. Lorite I. Lorite, C. Zandalazini, P. Esquinazi, D. Spemann, S. Friedländer, A. Pöppl, T. Michalsky, M. Grundmann, J. Vogt, J. Meijer, S.P. Heluani, H. Ohldag, W.A. Adeagbo, S.K. Nayak, W. Hergert, A. Ernst, M. Hoffmann Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires, in: J. Phys.: Condens. Matter 27(25), 256002:1-6 (2015) Christian Kranert Christian Kranert, Rüdiger Schmidt-Grund, Marius Grundmann Free charge carriers as origin for redshift of LO modes in wurtzite semiconductors excited above the band gap, in: J. Raman Spectr. 46(1), 167-170 (2015) Araceli de Pablos-Martin Araceli de Pablos-Martin, M. Ebert, C. Patzig, M. Krause, M. Dyrba, P. Miclea, M. Lorenz, M. Grundmann, Th. Höche Laser Welding of Sapphire Wafers Using a Thin-Film Fresnoite Glass Solder, in: Microsyst. Technol. 21(5), 1035-1045 (2015) C.P. Dietrich C.P. Dietrich, R. Johne, T. Michalsky, C. Sturm, P. Eastham, H. Franke, M. Lange, M. Grundmann, R. Schmidt-Grund Parametric relaxation in whispering-gallery mode exciton-polariton condensates, in: Phys. Rev. B 91(4), 041202(R):1-6 (2015) Abdurashid Mavlonov Abdurashid Mavlonov, Steffen Richter, Holger von Wenckstern, Rüdiger Schmidt-Grund, Jörg Lenzner, Michael Lorenz, Marius Grundmann Doping efficiency and limits in (Mg,Zn)O:Al,Ga thin films with two-dimensional lateral composition spread, in: Phys. Status Solidi A 212(12), 2850-2855 (2015) Haoming Wei Haoming Wei, Marcus Jenderka, Marius Grundmann, Michael Lorenz LaNiO3 films with tunable out-of-plane lattice parameter and their strain-related electrical properties, in: Phys. Status Solidi A 212(9), 1925-1930 (2015) Heiko Frenzel Heiko Frenzel, Tobias Dörfler, Peter Schlupp, Holger von Wenckstern, Marius Grundmann Long-throw magnetron sputtering of amorphous Zn-Sn-O-thin films at room temperature, in: Phys. Status Solidi A 212(7), 1482-1486 (2015) Michael Lorenz Michael Lorenz, Tobias Weiss, Florian Schmidt, Holger von Wenckstern, Marius Grundmann Aluminium- and gallium-doped homoepitaxial ZnO thin films: Strain-engineering and electrical performance, in: Phys. Status Solidi A 212(7), 1440-1447 (2015) Marius Grundmann Marius Grundmann Karl Bädeker (1877-1914) and the discovery of transparent conductive materials, in: Phys. Status Solidi A 212(7), 1409-1426 (2015) Marius Grundmann Marius Grundmann, Andreas Rahm, Holger von Wenckstern Transparent Conductive Oxides - Preface, in: Phys. Status Solidi A 212(7), 1408 (1 page) (2015) Special section on Transparent Conductive Oxides, in: Phys. Status Solidi A 212(7), 1407-1498 (2015), Marius Grundmann, Andreas Rahm, Holger von Wenckstern, eds. M. Grundmann M. Grundmann Theory of Semiconductor Solid and Hollow Nano- and Microwires With Hexagonal Cross-Section Under Torsion, in: Phys. Status Solidi B 252(4), 773-785 (2015) Florian Schmidt Florian Schmidt, Daniel Splith, Stefan Müller, Holger von Wenckstern, Marius Grundmann Electronic defects in In2O3 and In2O3:Mg thin films on r-plane sapphire, in: Phys. Status Solidi B 252(10), 2304-2308 (2015) Holger von Wenckstern Holger von Wenckstern, Daniel Splith, Marcus Purfürst, Zhipeng Zhang, Christian Kranert, Stefan Müller, Michael Lorenz, Marius Grundmann Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon, in: Semic. Sci. Technol. 30(2), 024005:1-7 (2015) Michael Lorenz Michael Lorenz, Holger Hochmuth, Max Kneiß, Michael Bonholzer, Marcus Jenderka, Marius Grundmann From high-TC superconductors to highly correlated Mott insulators - 25 years of pulsed laser deposition of functional oxides in Leipzig, in: Semic. Sci. Technol. 30(2), 024003:1-10 (2015) Saskia F. Fischer Saskia F. Fischer, Marius Grundmann Semiconductor Functional Oxides, in: Semic. Sci. Technol. 30(2), 020301:1-2 (2015) Special issue on semiconductor functional oxides, in: Semic. Sci. Technol. 30(2) (2015), S.F. Fischer, M. Grundmann, eds. C. Bundesmann C. Bundesmann, R. Feder, R. Wunderlich, U. Teschner, M. Grundmann, B. Rauschenbach, H. Neumann Ion beam sputter deposition of Ge films: Influence of process parameters on film properties, in: Thin Solid Films 589, 487-492 (2015) S. Puttnins S. Puttnins, M.S. Hammer, J. Neerken, I.Riedel, F. Daume, A. Rahm, A.Braun, M. Grundmann, T. Unold Impact of Sodium on the Device Characteristics of Low Temperature-Deposited CIGSe-Solar Cells, in: Thin Solid Films 582, 85-90 (2015) Marius Grundmann Marius Grundmann Bipolar oxide devices - Putting pn-heterostructures to work, in: BuildMoNa Annual Report 2015, p. 26-29 (2015) David Poppitz David Poppitz, Andriy Lotnyk, Jürgen W. Gerlach, Jörg Lenzner, Marius Grundmann, Bernd Rauschenbach An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE, in: Micron 73, 1-8 (2015) Report of The Physics Institutes of Universität Leipzig 2014, in: Universität Leipzig, M. Grundmann, ed. Marius Grundmann Marius Grundmann The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 2nd edition, reprint, in: (Beijing World Publishing Corporation, Beijing, 2014), ISBN 978-7-5100-7781-4 Marius Grundmann Marius Grundmann, Robert Karsthof, Holger von Wenckstern Interface Recombination Current in Type II Heterostructure Bipolar Diodes, in: ACS Appl. Mater. Interfaces 6(17), 14785-14789 (2014) Tomasz Jakubczyk Tomasz Jakubczyk, Helena Franke, Tomasz Smolenski, Maciej Sciesiek, Wojciech Pacuski, Andrzej Golnik, Rüdiger Schmidt-Grund, Marius Grundmann, Carsten Kruse, Detlef Hommel, Piotr Kossackiy Inhibition and Enhancement of the Spontaneous Emission of Quantum Dots in Micropillar Cavities with Radial Distributed Bragg Reflectors, in: ACS Nano 8(10), 9970-9978 (2014) Christian Tessarek Christian Tessarek, Robert Röder, Tom Michalsky, Sebastian Geburt, Helena Franke, Rüdiger Schmidt-Grund, Martin Heilmann, Björn Hoffmann, Carsten Ronning, Marius Grundmann, Silke Christiansen Improving the optical properties of self-catalyzed GaN microrods towards whispering gallery mode lasing, in: ACS Photonics 1(10), 990-997 (2014) T. Michalsky T. Michalsky, M. Wille, C.P. Dietrich, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann Phonon-assisted Lasing in ZnO Microwires at Room Temperature, in: Appl. Phys. Lett. 105(21), 211106:1-4 (2014) R. Schmidt-Grund R. Schmidt-Grund, H. Krauß, C. Kranert, M. Bonholzer, M. Grundmann Temperature dependence of the dielectric function in the spectral range (0.5-8.5) eV of an In2O3 thin film, in: Appl. Phys. Lett. 105(11), 111906:1-4 (2014) Max Kneiß Max Kneiß, Marcus Jenderka, Kerstin Brachwitz, Michael Lorenz, Marius Grundmann Modeling the electrical transport in epitaxial undoped and Ni-, Cr-, and W-doped TiO2 anatase thin films, in: Appl. Phys. Lett. 105(6), 062103:1-5 (2014) Marko Stölzel Marko Stölzel, Alexander Müller, Gabriele Benndorf, Michael Lorenz, Marius Grundmann, Christian Patzig, Thomas Höche Determination of the spontaneous polarization of wurtzite (Mg,Zn)O, in: Appl. Phys. Lett. 104(19), 192102:1-4 (2014) Friedrich-Leonhard Schein Friedrich-Leonhard Schein, Markus Winter, Tammo Böntgen, Holger von Wenckstern, Marius Grundmann Highly rectifying p-ZnCo2O4/n-ZnO heterojunction diodes, in: Appl. Phys. Lett. 104(2), 022104:1-4 (2014) H. von Wenckstern H. von Wenckstern, D. Splith, F. Schmidt, M. Grundmann, O. Bierwagen, J.S. Speck Schottky contacts to In2O3, in: APL Mater. 2(4), 046104:1-7 (2014) Martin Thunert Martin Thunert, Alexander Janot, Helena Franke, Chris Sturm, Tom Michalsky, María Dolores Martín, Luis Viña, Bernd Rosenow, Marius Grundmann, Rüdiger Schmidt-Grund Cavity Polariton Condensate in a Disordered Environment, in: arxiv: 1412.8667:1-12 (2014) T. Michalsky T. Michalsky, M. Wille, C. P. Dietrich, R. Röder, C. Ronning, R. Schmidt-Grund, M. Grundmann Phonon-Assisted Lasing in ZnO Microwires at Room Temperature, in: arxiv: 1410.7970 (2014) Marcus Jenderka Marcus Jenderka, Rüdiger Schmidt-Grund, Marius Grundmann, Michael Lorenz Electronic excitations and structure of Li2IrO3 thin films grown on ZrO2:Y (001) substrates , in: arxiv: 1407.3596 (2014) Zhipeng Zhang Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann Monolithic multichannel ultraviolet photodiodes based on (Mg,Zn)O thin films with continuous composition spreads, in: IEEE J. Sel. Top. Quantum Electr. 20(6), 3801606:1-6 (2014) Stefan Müller Stefan Müller, Holger von Wenckstern, Florian Schmidt, Daniel Splith, Robert Heinold, Martin Allen, Marius Grundmann Method of choice for fabrication of high-quality ZnO-based Schottky diodes, in: J. Appl. Phys. 116(19), 194506:1-12 (2014) Florian Schmidt Florian Schmidt, Stefan Müller, Holger von Wenckstern, Gabriele Benndorf, Rainer Pickenhain, Marius Grundmann Impact of strain on defects in (Mg,Zn)O thin films, in: J. Appl. Phys. 116(10), 103703:1-9 (2014) R. Schmidt-Grund R. Schmidt-Grund, C. Kranert, T. Böntgen, H. von Wenckstern, H. Krauß, M. Grundmann Dielectric function in the NIR-VUV spectral range of (InxGa1-x)2O3 thin films, in: J. Appl. Phys. 116(5), 053510:1-7 (2014) Christian Kranert Christian Kranert, Jörg Lenzner, Marcus Jenderka, Michael Lorenz, Holger von Wenckstern, Rüdiger Schmidt-Grund, Marius Grundmann Lattice parameters and Raman-active phonon modes of (InxGa1-x)2O3 for x < 0.4, in: J. Appl. Phys. 116(1), 013505:1-7 (2014) Snigdhatanu Acharya Snigdhatanu Acharya, Sumedha Chouthe, Heinrich Graener, Tammo Böntgen, Chris Sturm, Rüdiger Schmidt-Grund, Marius Grundmann, Gerhard Seifert Ultrafast dynamics of the dielectric functions of ZnO and BaTiO3 thin films after intense femtosecond laser excitation, in: J. Appl. Phys. 115(5), 053508:1-9 (2014) Rolf Böttcher Rolf Böttcher, Andreas Pöppl, Michael Lorenz, Stefan Friedländer, Daniel Spemann, Marius Grundmann 55Mn Pulsed ENDOR Spectroscopy of Mn2+ Ions in ZnO Thin Films and Single Crystal, in: J. Magn. Res. 245, 79-86 (2014) Michael Lorenz Michael Lorenz, Rolf Böttcher, Stefan Friedländer, Andreas Pöppl, Daniel Spemann, Marius Grundmann Local lattice distortions in oxygen deficient Mn-doped ZnO thin films, probed by electron paramagnetic resonance, in: J. Mater. Chem. C 2(25), 4947-4956 (2014) Michael Lorenz Michael Lorenz, Vera Lazenka, Peter Schwinkendorf, Francis Bern, Michael Ziese, Hiwa Modarresi, Alexander Volodin, Margriet van Bael, Kristiaan Temst, Andre Vantomme, Marius Grundmann Multiferroic BaTiO3-BiFeO3 composite thin films and multilayers: Strain engineering and magnetoelectric coupling, in: J. Phys. D: Appl. Phys. 47(13), 135303:1-10 (2014) Michael Lorenz Michael Lorenz, Araceli de Pablos-Martin, Christian Patzig, Marko Stölzel, Kerstin Brachwitz, Holger Hochmuth, Marius Grundmann, Thomas Höche Highly textured fresnoite thin films synthesized by pulsed laser deposition with CO2 laser direct heating, in: J. Phys. D: Appl. Phys. 47(3), 034013:1-9 (2014) Florian Schmidt Florian Schmidt, Peter Schlupp, Stefan Müller, Christof Peter Dietrich, Holger von Wenckstern, Marius Grundmann, Robert Heinhold, Hyung-Suk Kim, Martin Ward Allen A DLTS study of ZnO microwire, thin film and bulk material, in: Proc. Mat. Res. Soc. 1633, 51-54 (2014) H. von Wenckstern H. von Wenckstern, Z. Zhang, J. Lenzner, F. Schmidt, M. Grundmann A continuous composition spread approach towards monolithic, wavelength-selective multichannel UV-photo-detector arrays, in: Proc. Mat. Res. Soc. 1633, 123-129 (2014) P. Schlupp P. Schlupp, H. von Wenckstern, M. Grundmann Amorphous zinc-tin oxide thin films fabricated by pulsed laser deposition at room temperature, in: Proc. Mat. Res. Soc. 1633, 101-104 (2014) J.L. Cholula-Díaz J.L. Cholula-Díaz, J. Barzola-Quiquia, H. Krautscheid, C. Kranert, T. Michalsky, P. Esquinazi, M. Grundmann Conducting behavior of chalcopyrite-type CuGaS2 crystals under visible light, in: Phys. Chem. Chem. Phys. 16(39), 21860-21866 (2014) Daniel Splith Daniel Splith, Stefan Müller, Florian Schmidt, Holger von Wenckstern, Johan Janse van Rensburg, Walter E. Meyer, Marius Grundmann Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition, in: Phys. Status Solidi A 211(1), 40-47 (2014) Stefan Müller Stefan Müller, Holger von Wenckstern, Daniel Splith, Florian Schmidt, Marius Grundmann Control of the conductivity of Si-doped β-Ga2O3 thin films via growth temperature and pressure, in: Phys. Status Solidi A 211(1), 34-39 (2014) Michael Bonholzer Michael Bonholzer, Michael Lorenz, Marius Grundmann Layer-by-layer growth of TiN by pulsed laser deposition on in-situ annealed (100) MgO substrates, in: Phys. Status Solidi A 211(11), 2621-2624 (2014) Peter Schwinkendorf Peter Schwinkendorf, Michael Lorenz, Holger Hochmuth, Zhipeng Zhang, Marius Grundmann Interface charging effects in ferroelectric ZnO-BaTiO3 field-effect transistor heterostructures, in: Phys. Status Solidi A 211(1), 166-172 (2014) Florian Schmidt Florian Schmidt, Stefan Müller, Rainer Pickenhain, Holger von Wenckstern, Sebastian Geburt, Carsten Ronning, Marius Grundmann Defect studies on Ar-implanted ZnO thin films, in: Phys. Status Solidi B 251(5), 937-941 (2014) M. Grundmann M. Grundmann, M. Scheibe, M. Lorenz, J. Bläsing, A. Krost X-ray multiple diffraction of ZnO substrates and heteroepitaxial thin films, in: Phys. Status Solidi B 251(4), 850-863 (2014) Christian Kranert Christian Kranert, Rüdiger Schmidt-Grund, Marius Grundmann Raman active phonon modes of cubic In2O3, in: Phys. Status Solidi RRL 8(6), 554-559 (2014) Rüdiger Schmidt-Grund Rüdiger Schmidt-Grund, Steffen Richter, Stefan G. Ebbinghaus, Michael Lorenz, Carsten Bundesmann, Marius Grundmann Electronic transitions and dielectric function tensor of a YMnO3 single crystal in the NIR, in: RSC Adv. 4(63), 33549-33554 (2014) S. Puttnins S. Puttnins, S. Jander, A. Wehrmann, G. Benndorf, M. Stölzel, A. Müller, H. von Wenckstern, F. Daume, A. Rahm, M. Grundmann Breakdown characteristics of flexible Cu(In,Ga)Se2 solar cells, in: Sol. Energy Mat. Sol. Cells 120(Part B), 506-511 (2014) F. Schmidt F. Schmidt, H. von Wenckstern, O. Breitenstein, R. Pickenhain, M. Grundmann Low Rate Deep Level Transient Spectroscopy: A powerful tool for defect characterization in wide bandgap semiconductors, in: Sol. St. Electr. 92, 40-46 (2014) Lennart Fricke Lennart Fricke, Tammo Böntgen, Jan Lorbeer, Carsten Bundesmann, Rüdiger Schmidt-Grund, Marius Grundmann An extended Drude model for the in-situ spectroscopic ellipsometry analysis of ZnO thin layers and surface modifications, in: Thin Solid Films 571(3), 437-441 (2014) Marius Grundmann Marius Grundmann, Friedrich-Leonard Schein, Robert Karsthof, Peter Schlupp, Holger von Wenckstern Several Approaches to Bipolar Oxide Diodes With High Rectification, in: Adv. Sci. Technol. 93, 252-259 (2014) Marius Grundmann Marius Grundmann Amorphous semiconductor diodes - A new paradigm, in: BuildMoNa Annual Report 2014, p. 28-31 (2014) Report of The Physics Institutes of Universität Leipzig 2013, in: Universität Leipzig, M. Grundmann, ed. C.P. Dietrich C.P. Dietrich, M. Grundmann Pulsed-laser deposition growth of ZnO NWs, in: Wide Band Gap Semiconductor Nanowires: Low-Dimensionality Effects and Growth, Vincent Consonni, Guy Feuillet eds., p. 303-323 (2014) (Wiley-ISTE, 2014), ISBN 978-1-84821-597-9 Michael Lorenz Michael Lorenz, Martin Lange, Christian Kranert, Christof P. Dietrich, Marius Grundmann Optical properties of and optical devices from ZnO-based nanostructures, in: Zinc Oxide Nanostructures: Advances and Applications, p. 43-99 (2014), M. Willander, ed. (Pan Stanford Publishing, Singapore, 2014), ISBN 9789814411332 Zhipeng Zhang Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann Energy-selective multichannel ultraviolet photodiodes based on (Mg,Zn)O, in: Appl. Phys. Lett. 103(17), 171111:1-4 (2013) F. Schmidt F. Schmidt, S. Müller, H. von Wenckstern, C.P. Dietrich, R. Heinhold, M.W. Allen, M. Grundmann Comparative Study of Deep Defects in ZnO Microwires, Thin Films and Bulk Single Crystals, in: Appl. Phys. Lett. 103(6), 062102:1-4 (2013) K. Brachwitz K. Brachwitz, T. Böntgen, M. Lorenz, M. Grundmann On the transition point of thermally activated conduction of spinel-type MFe2O4 ferrite thin films (M=Zn,Co,Ni), in: Appl. Phys. Lett. 102(17), 172104:1-4 (2013) Friedrich-Leonhard Schein Friedrich-Leonhard Schein, Holger von Wenckstern, Marius Grundmann Transparent p-CuI/n-ZnO heterojunction diodes, in: Appl. Phys. Lett. 102(9), 092109:1-4 (2013) Marcus Jenderka Marcus Jenderka, José Barzola-Quiquia, Zhipeng Zhang, Heiko Frenzel, Marius Grundmann, Michael Lorenz Mott Variable Range Hopping and Weak Antilocalization Effect in Heteroepitaxial Na2IrO3 Thin Films, in: arxiv: 1303.5245 (2013) Holger von Wenckstern Holger von Wenckstern, Zhipeng Zhang, Florian Schmidt, Jörg Lenzner, Holger Hochmuth, Marius Grundmann Continuous composition spread using pulsed-laser deposition with a single, segmented target, in: CrystEngComm 15(46), 10020-10027 (2013) Fabian Johannes Klüpfel Fabian Johannes Klüpfel, Friedrich-Leonhard Schein, Michael Lorenz, Heiko Frenzel, Holger von Wenckstern, Marius Grundmann Comparison of ZnO-based JFET, MESFET, and MISFET, in: IEEE Transact. Electr. Dev. 60(6), 1828-1833 (2013) R. Schmidt-Grund R. Schmidt-Grund, T. Lühmann, T. Böntgen, H. Franke, D. Opper, M. Lorenz, M. Grundmann Temperature dependent dielectric function in the NIR-VUV spectral range of alumina and yttria stabilized zirconia thin films, in: J. Appl. Phys. 114(22), 223509:1-8 (2013) T. Böntgen T. Böntgen, K. Brachwitz, R. Schmidt-Grund, M. Lorenz, M. Grundmann Vacuum ultraviolett dielectric function of ZnFe2O4 thin films, in: J. Appl. Phys. 113(7), 073503:1-4 (2013) Alexander Lajn Alexander Lajn, Holger von Wenckstern, Marius Grundmann, Gerald Wagner, Pedro Barquinha, Elvira Fortunato, Rodrigo Martins Comparative study of transparent rectifying contacts on semiconducting oxide single crystals and amorphous thin films, in: J. Appl. Phys. 113(4), 044511:1-13 (2013) J. Zippel J. Zippel, M. Lorenz, M. Lange, M. Stölzel, G. Benndorf, M. Grundmann Growth control of nonpolar and polar ZnO/MgxZn1-xO quantum wells by pulsed-laser deposition, in: J. Cryst. Growth 364, 81-87 (2013) M. Lange M. Lange, C.P. Dietrich, M Lorenz, M. Grundmann Excitonic and Optical Confinement in Microwire Heterostructures with Non-Polar (Zn,Cd)O/(Mg,Zn)O Multiple Quantum Wells, in: J. Phys. Chem. C 117(17), 9020-9024 (2013) J. Zippel J. Zippel, M. Lorenz, A. Setzer, M. Rothermel, D. Spemann, P. Esquinazi, M. Grundmann, G. Wagner, R. Denecke, A.A. Timopheev Defect-induced magnetism in homoepitaxial manganese stabilized zirconia thin films, in: J. Phys. D: Appl. Phys. 46(27), 275002:1-10 (2013) V.V. Lazenka V.V. Lazenka, M. Lorenz, H. Modarresi, K. Brachwitz, P. Schwinkendorf, T. Böntgen, J. Vanacken, M. Ziese, M. Grundmann, V.V. Moshchalkov Effect of rare-earth ion doping on multiferroic properties of BiFeO3 thin films grown epitaxially on SrTiO3(100), in: J. Phys. D: Appl. Phys. 46(17), 175006:1-9 (2013) Michael Lorenz Michael Lorenz, Christian Schmidt, Gabriele Benndorf, Tammo Böntgen, Holger Hochmuth, Rolf Böttcher, Andreas Pöppl, Daniel Spemann, Marius Grundmann Degenerate interface layers in epitaxial scandium-doped ZnO thin films, in: J. Phys. D: Appl. Phys. 46(6), 065311:1-10 (2013) Felix Daume Felix Daume, Stefan Puttnins, Christian Scheit, Hendrik Zachmann, Andreas Rahm, Alexander Braun, Marius Grundmann Damp heat treatment of Cu(In,Ga)Se2 solar cells with different sodium content, in: Materials 6(12), 5478-5489 (2013) Michael Lorenz Michael Lorenz, Marius Grundmann, Sandra Wickert, Reinhard Denecke Oxidation state of tungsten oxide thin films used as gate dielectric for zinc oxide based transistors, in: Proc. Mat. Res. Soc. 1494, 1649:1-4 (2013) C. Kranert C. Kranert, R. Schmidt-Grund, M. Grundmann Surface- and point-defect-related Raman scattering in wurtzite semiconductors excited above the band gap, in: New J. Phys. 15(11), 113048:1-22 (2013) J. Zippel J. Zippel, M. Lorenz, G. Wagner, J. Lenzner, M. Grundmann Martensitic phase transition and subsequent surface corrugation in manganese stabilized zirconia thin films, in: Phil. Mag. 93(18), 2329-2339 (2013) Marko Stölzel Marko Stölzel, Alexander Müller, Gabriele Benndorf, Matthias Brandt, Michael Lorenz, Marius Grundmann Determination of unscreened exciton states in polar ZnO/(Mg,Zn)O quantum wells with strong quantum-confined Stark effect, in: Phys. Rev. B 88(4), 045315:1-6 (2013) Marcus Jenderka Marcus Jenderka, José Barzola-Quiquia, Zhipeng Zhang, Heiko Frenzel, Marius Grundmann, Michael Lorenz Mott variable range hopping and weak antilocalization effect in heteroepitaxial Na2IrO3 thin films, in: Phys. Rev. B 88(4), 045111:1-6 (2013) Alexander Müller Alexander Müller, Marius Grundmann Tunneling dynamics of excitons in random semiconductor alloys, in: Phys. Rev. B 87(3), 035134:1-5 (2013) Marius Grundmann Marius Grundmann, Friedrich-Leonhard Schein, Michael Lorenz, Tammo Böntgen, Jörg Lenzner, Holger von Wenckstern Cuprous Iodide - a p-type transparent semiconductor: history and novel applications, in: Phys. Status Solidi A 210(9), 1671-1703 (2013) Heiko Frenzel Heiko Frenzel, Alexander Lajn, Marius Grundmann One decade of fully transparent oxide thin film transistors: fabrication, performance and stability, in: Phys. Status Solidi RRL 7(9), 605-615 (2013) Stefan Puttnins Stefan Puttnins, Sergiu Levcenco, Klaus Schwarzburg, Gabriele Benndorf, Felix Daume, Andreas Rahm, Alexander Braun, Marius Grundmann, Thomas Unold Effect of Sodium on Material and Device Quality in Low Temperature Deposited Cu(In,Ga)Se2, in: Sol. Energy Mat. Sol. Cells 119, 281-286 (2013) A.A. Timopheev A.A. Timopheev, A.M. Azevedo, N.A. Sobolev, K. Brachwitz, M. Lorenz, M. Ziese, P. Esquinazi, M. Grundmann Magnetic anisotropy of epitaxial zinc ferrite thin films grown by pulsed laser deposition, in: Thin Solid Films 527, 273-277 (2013) Marius Grundmann Marius Grundmann Transparent semiconductors - from materials growth to devices, in: BuildMoNa Annual Report 2013, p. 29-33 (2013) Marius Grundmann Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE , in: CA 2765981 C (Canadian Intellectual Property Office, 2013) Marius Grundmann Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu ihrer Herstellung und Verwendung, in: EP 2 446 484 B1 (European Patent Office, Munich, 2013) M. Lorenz M. Lorenz, M. Ziese, G. Wagner, P. Esquinazi, M. Grundmann Exchange bias and magnetoelectric coupling effects in ZnFe2O4-BaTiO3 composite thin films, in: Ext. Abstracts of the Nature Conference "Frontiers in Electronic Materials", Aachen, Germany (Nanosession: Multiferroic Thin Films and Heterostructures), J. Heber, D. Schlomm, Y. Tokura, R. Waser, M. Wuttig, eds., p. 334 (1 page) (2013) S. Puttnins S. Puttnins, H. Kempa, S. Englisch, R. Karsthof, F. Daume, A. Rahm, A. Braun, M. Grundmann Voltage Dependent Photocurrent in Low-Temperature Deposited CIGSe Solar Cells, in: Proc. 28th European Photovoltaic Solar Energy Conference and Exhibition, p. 2438-2442 (2013) F. Daume F. Daume, A. Rahm, A. Braun, M. Grundmann Sodium in the Degradation Process of Cu(In,Ga)Se2 Solar Cells, in: Proc. 28th European Photovoltaic Solar Energy Conference and Exhibition, p. 2192-2198 (2013) Report of The Physics Institutes of Universität Leipzig 2012, in: Universität Leipzig, M. Grundmann, ed. Marius Grundmann Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE, in: US 8,445,904 B2 (United States Patent, 2013) M. Lorenz M. Lorenz, A. Reinhardt, H. von Wenckstern, M. Grundmann Design rules of (Mg,Zn)O-based thin-film transistors with high-κ WO3 dielectric gates, in: Appl. Phys. Lett. 101(18), 183502:1-4 (2012) Christof Peter Dietrich Christof Peter Dietrich, Martin Lange, Tammo Böntgen, Marius Grundmann The corner effect in hexagonal whispering gallery microresonators, in: Appl. Phys. Lett. 101(14), 141116:1-5 (2012) R. Heinhold R. Heinhold, H.-S. Kim, F. Schmidt, H. von Wenckstern, M. Grundmann, R.J. Mendelsberg, R.J. Reeves, S.M. Durbin, M.W. Allen Optical and defect properties of hydrothermal ZnO with low lithium contamination, in: Appl. Phys. Lett. 101(6), 062105:1-4 (2012) Florian Schmidt Florian Schmidt, Holger von Wenckstern, Daniel Spemann, Marius Grundmann On the radiation hardness of (Mg,Zn)O PLD thin films, in: Appl. Phys. Lett. 101(1), 012103:1-4 (2012) Christof Peter Dietrich Christof Peter Dietrich, Martin Lange, Marko Stölzel, Marius Grundmann Microwire (Mg,Zn)O/ZnO and (Mg,Zn)O/(Cd,Zn)O non-polar quantum well heterostructures for cavity applications, in: Appl. Phys. Lett. 100(3), 031110:1-4 (2012) Michael Lorenz Michael Lorenz, Michael Ziese, Gerald Wagner, Jörg Lenzner, Christian Kranert, Kerstin Brachwitz, Holger Hochmuth, Pablo Esquinazi, Marius Grundmann Exchange bias and magnetoelectric coupling effects in ZnFe2O4-BaTiO3 composite thin films, in: CrystEngComm 14(20), 6477-6486 (2012) S. Müller S. Müller, H. von Wenckstern, O. Breitenstein, J. Lenzner, M. Grundmann Microscopic identification of hot spots in multi-barrier Schottky contacts on pulsed laser deposition grown zinc oxide thin films, in: IEEE Transact. Electr. Dev. 59(3), 536-541 (2012) Friedrich-Leonhard Schein Friedrich-Leonhard Schein, Holger von Wenckstern, Heiko Frenzel, Marius Grundmann ZnO-based n-channel junction field-effect transistor with room-temperature fabricated p-type ZnCo2O4-gate, in: IEEE Electron Device Letters 33(5), 676-678 (2012) M. Lange M. Lange, C.P. Dietrich, K. Brachwitz, T. Böntgen, M. Lorenz, M. Grundmann (Zn,Cd)O thin films for the application in heterostructures: structural and optical properties, in: J. Appl. Phys. 112(10), 103517:1-6 (2012) Marko Stölzel Marko Stölzel, Johannes Kupper, Matthias Brandt, Alexander Müller, Gabriele Benndorf, Michael Lorenz, Marius Grundmann Electronic and optical properties of ZnO/(Mg,Zn)O quantum wells with and without a distinct QCSE, in: J. Appl. Phys. 111(6), 063701:1-10 (2012) M. Noltemeyer M. Noltemeyer, F. Bertram, Th. Hempel, B. Bastek, A. Polyakov, J. Christen, M. Brandt, M. Lorenz, M. Grundmann Excitonic Transport in ZnO, in: J. Mat. Res. 27(17), 2225-2231 (2012) Steve Durbin Steve Durbin, Tim Veal, Marius Grundmann, Jamie Phillips Focus Issue on Oxide Semiconductors, Introduction, in: J. Mat. Res. 27(17), 2179 (1 page) (2012) (Materials Research Society, Warrendale, PA, 2012) Focus Issue on Oxide Semiconductors, in: J. Mat. Res. 27(17) (2012), Steve Durbin, Tim Veal, Marius Grundmann, Jamie Phillips, eds. (Materials Research Society, Warrendale, PA, 2012) Helena Franke Helena Franke, Chris Sturm, Rüdiger Schmidt-Grund, Gerald Wagner, Marius Grundmann Ballistic propagation of exciton-polariton condensates in a ZnO-based microcavity, in: New J. Phys. 14(1), 013037:1-12 (2012) M. Lange M. Lange, J. Kupper, C.P. Dietrich, M. Brandt, M. Stölzel, G. Benndorf, M. Lorenz, M. Grundmann Exciton localization and phonon sidebands in polar ZnO/MgZnO quantum wells, in: Phys. Rev. B 86(4), 045318:1-7 (2012) M. Grundmann M. Grundmann, C.P. Dietrich Whispering gallery modes in deformed hexagonal resonators, in: Phys. Status Solidi B 249(5), 871-879 (2012) M. Brandt M. Brandt, M. Bonholzer, M. Stölzel, G. Benndorf, D. Spemann, M. Lorenz, M. Grundmann Electrical transport in strained MgxZn1-xO:P thin films grown by pulsed laser deposition on ZnO (000-1), in: Phys. Status Solidi B 249(1), 82-90 (2012) M. Schmidt M. Schmidt, M. Ellguth, R. Karsthof, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, F.C.C. Ling On the T2 trap in zinc oxide thin films, in: Phys. Status Solidi B 249(3), 588-595 (2012) Jan Zippel Jan Zippel, Michael Lorenz, Gabriele Benndorf, Marius Grundmann Persistent layer-by-layer growth for pulsed-laser homoepitaxy of (000-1) ZnO, in: Phys. Status Solidi RRL 6(11), 433-435 (2012) Martin Lange Martin Lange, Christof P. Dietrich, Kerstin Brachwitz, Marko Stölzel, Michael Lorenz, Marius Grundmann Visible emission from ZnCdO/ZnO multiple quantum wells, in: Phys. Status Solidi RRL 6(1), 31-33 (2012) Martin Noltemeyer Martin Noltemeyer, Frank Bertram, Thomas Hempel, Barbara Bastek, Juergen Christen, Matthias Brandt, Michael Lorenz, Marius Grundmann Excitonic transport in ZnO, in: Proc. SPIE 8263, 82630X:1-7 (2012) Matthias Schmidt Matthias Schmidt, Holger von Wenckstern, Rainer Pickenhain, Marius Grundmann On the investigation of electronic defect states in ZnO thin films by space charge spectroscopy with optical excitation, in: Sol. St. Electr. 75, 48-54 (2012) J.P. Richters J.P. Richters, J. Kalden, M. Gnauck, C. Ronning, C.P. Dietrich, H. von Wenckstern, M. Grundmann, J. Gutowski, T. Voss Modal gain and its diameter dependence in single ZnO micro- and nanowires, in: Semic. Sci. Technol. 27(1), 015005:1-5 (2012) Marius Grundmann Marius Grundmann Quantum optics and round corners in Leipzig, in: BuildMoNa Annual Report 2012, p. 33-37 (2012) H. von Wenckstern H. von Wenckstern, R. Schmidt-Grund, C. Bundesmann, A. Müller, C.P. Dietrich, M. Stölzel, M. Lange, M. Grundmann The (Mg,Zn)O Alloy, in: Handbook of Zinc Oxide and Related Materials, Vol. 1 Materials, p. 257-320 (2012), Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855706 Heiko Frenzel Heiko Frenzel, Michael Lorenz, Friedrich-L. Schein, Alexander Lajn, Fabian J. Klüpfel, Tobias Diez, Holger von Wenckstern, Marius Grundmann Metal-semiconductor field-effect transistors and integrated circuits based on ZnO and related oxides, in: Handbook of Zinc Oxide and Related Materials, Vol. 2 Devices and Nano-Engineering, p. 369-434 (2012), Z.C. Feng, ed. (Taylor and Francis/CRC Press, Florida, USA, 2012), ISBN 978-1439855744 S. Puttnins S. Puttnins, M. Purfürst, M. Hartung, H.-K. Lee, F. Daume, L. Hartmann, A. Rahm, A. Braun, M. Grundmann The Influence of Sodium on CIGSe Solar Cell Breakdown Characteristics, in: Proc. 27th European Photovoltaic Solar Energy Conference and Exhibition, p. 2219-2221 (2012) Report of The Physics Institutes of Universität Leipzig 2011, in: Universität Leipzig, M. Grundmann, ed. Michael Lorenz Michael Lorenz, Holger von Wenckstern, Marius Grundmann Tungsten oxide as gate dielectric for highly transparent and temperature-stable zincoxide-based thin-film transistors, in: Adv. Mater. 23(45), 5383-5386 (2011) C. Kranert C. Kranert, T. Böntgen, R. Schmidt‐Grund, M. Brandt, S. Schöche, C. Sturm, H. Hochmuth, M. Lorenz, M. Grundmann Structural properties of BaTiO3/ZnO heterostructures and interfaces, in: AIP Conf. Proc. 1399, 451-452 (2011) (AIP Publishing LLC, New York) C. Sturm C. Sturm, H. Hilmer, R. Schmidt‐Grund, M. Grundmann Occupation behaviour of the lower exciton-polariton branch in ZnO-based microresonators, in: AIP Conf. Proc. 1399, 447-448 (2011) (AIP Publishing LLC, New York) C.P. Dietrich C.P. Dietrich, M. Grundmann Comment on "Exciton-polariton microphotoluminescence and lasing from ZnO whispering-gallery mode microcavities" [Appl. Phys. Lett. 98, 161110 (2011)], in: Appl. Phys. Lett. 99(13), 136101 (1 page) (2011) Zh. Zhang Zh. Zhang, H. von Wenckstern, M. Schmidt, M. Grundmann Wavelength selective metal-semiconductor-metal photodetectors based on (Mg,Zn)O-heterostructures, in: Appl. Phys. Lett. 99(8), 083502:1-3 (2011) C.P. Dietrich C.P. Dietrich, M. Lange, F.J. Klüpfel, H. von Wenckstern, R. Schmidt-Grund, M. Grundmann Strain distribution in bent ZnO microwires, in: Appl. Phys. Lett. 98(3), 031105:1-3 (2011) Michael Bachmann Michael Bachmann, Karsten Goede, Annette G. Beck-Sickinger, Marius Grundmann, Anders Irbäck, Wolfhard Janke Microscopic Mechanism of Specific Peptide Adhesion to Semiconductor Substrates, in: arxiv: 1107.1208 (2011) Alexander Müller Alexander Müller, Michael Lorenz, Kerstin Brachwitz, Jörg Lenzner, Kai Mittwoch, Wolfgang Skorupa, Marius Grundmann, Thomas Höche Fresnoite Thin Films grown by Pulsed Laser Deposition: Photoluminescence and Laser Crystallization, in: CrystEngComm 13(21), 6377-6385 (2011) A. Lajn A. Lajn, T. Diez, F. Schein, H. Frenzel, H. von Wenckstern, M. Grundmann Light and temperature stability of fully transparent ZnO-based inverter circuits, in: IEEE Electron Device Letters 32(4), 515-517 (2011) J. Zippel J. Zippel, M. Lorenz, J. Lenzner, M. Grundmann, T. Hammer, A. Jacquot, H. Böttner Electrical transport and optical emission of MnxZr1-xO2 (0<x<0.5) thin films, in: J. Appl. Phys. 110(4), 043706:1-6 (2011) C.C. Dey C.C. Dey, S. Dey, S.C. Bedi, S.K. Das, M. Lorenz, M. Grundmann, J. Vogt, T. Butz Hafnium Oxide Thin Films Studied by Time Differential Perturbed Angular Correlations, in: J. Appl. Phys. 109(11), 113918:1-6 (2011) F.J. Klüpfel F.J. Klüpfel, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors, in: J. Appl. Phys. 109(7), 074515:1-4 (2011) C.P. Dietrich C.P. Dietrich, M. Brandt, M. Lange, J. Kupper, T. Böntgen, H. von Wenckstern, M. Grundmann Defect properties of ZnO and ZnO:P microwires, in: J. Appl. Phys. 109(1), 013712:1-5 (2011) M. Lange M. Lange, C.P. Dietrich, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, M. Grundmann Thermal stability of ZnO/ZnCdO/ZnO double heterostructures grown by pulsed laser deposition, in: J. Cryst. Growth 328(1), 13-17 (2011) A. Lajn A. Lajn, M. Schmidt, H. von Wenckstern, M. Grundmann Erratum: Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO, in: J. Electr. Mat. 40(4), 477 (1 page) (2011) A. Lajn A. Lajn, M. Schmidt, H. von Wenckstern, M. Grundmann Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO, in: J. Electr. Mat. 40, 473-476 (2011) M. Lange M. Lange, C.P. Dietrich, J. Zúñiga-Pérez, H. von Wenckstern, M. Lorenz, M. Grundmann MgZnO/ZnO quantum well nanowire heterostructures with large confinement energies, in: J. Vac. Sci. Technol. A 29(3), 03A104:1-5 (2011) C.P. Dietrich C.P. Dietrich, M. Lange, C. Sturm, R. Schmidt-Grund, M. Grundmann One- and two-dimensional cavity modes in ZnO microwires, in: New J. Phys. 13(10), 103021:1-9 (2011) Chris Sturm Chris Sturm, Helena Hilmer, Rüdiger Schmidt-Grund, Marius Grundmann Exciton-polaritons in a ZnO-based microcavity: polarization dependence and non-linear occupation, in: New J. Phys. 13(3), 033014:1-17 (2011) C. Sturm C. Sturm, H. Hilmer, B. Rheinländer, R. Schmidt-Grund, M. Grundmann Cavity-photon dispersion in one-dimensional confined microresonators with an optically anisotropic cavity material, in: Phys. Rev. B 83(20), 205301:1-12 (2011) M. Ellguth M. Ellguth, M. Schmidt, R. Pickenhain, M. Grundmann Characterization of point defects in ZnO thin films by Optical Deep Level Transient Spectroscopy, in: Phys. Status Solidi B 248(4), 941-949 (2011) M. Grundmann M. Grundmann Formation of Epitaxial Domains: Unified Theory and Survey of Experimental Results, in: Phys. Status Solidi B 248(4), 805-824 (2011) [Editor's Choice] Matthias Schmidt Matthias Schmidt, Kerstin Brachwitz, Florian Schmidt, Martin Ellguth, Holger von Wenckstern, Rainer Pickenhain, Marius Grundmann, Gerhard Brauer, Wolfgang Skorupa Nickel-related defects in ZnO - A deep-level transient spectroscopy and photo-capacitance study , in: Phys. Status Solidi B 248(8), 1949-1955 (2011) M. Lorenz M. Lorenz, M. Brandt, K. Mexner, K. Brachwitz, M. Ziese, P. Esquinazi, H. Hochmuth, M. Grundmann Ferrimagnetic ZnFe2O4 thin films on SrTiO3 single crystals with highly tunable electrical conductivity, in: Phys. Status Solidi RRL 5(12), 438-440 (2011) M. Brandt M. Brandt, H. von Wenckstern, M. Stölzel, H. Hochmuth, M. Lorenz, M. Grundmann Semiconducting oxide heterostructures, in: Semic. Sci. Technol. 26(1), 014040:1-9 (2011) T. Böntgen T. Böntgen, S. Schöche, R. Schmidt-Grund, C. Sturm, M. Brandt, H. Hochmuth, M. Lorenz, M. Grundmann Optical properties of BaTiO3/ZnO heterostructures under the effect of an applied bias, in: Thin Solid Films 519(9), 2933-2935 (2011) R. Schmidt-Grund R. Schmidt-Grund, P. Kühne, C. Czekalla, D. Schumacher, C. Sturm, M. Grundmann Determination of the refractive index of single crystal bulk samples and micro-structures, in: Thin Solid Films 519(9), 2777-2781 (2011) T. Höche T. Höche, M. Lorenz, A. Müller, M. Grundmann, K. Mittwoch Laser patterning of thin films for luminescence applications, in: 18th European Microelectronics and Packaging Conference (EMPC), p. 1-5 (2011), ISBN 978-1-4673-0694-2 Marius Grundmann Marius Grundmann Oxide-based novel electronic and photonic building blocks, in: BuildMoNa Annual Report 2011, p. 36-39 (2011) H. Frenzel H. Frenzel, A. Lajn, H. von Wenckstern, M. Grundmann Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu seiner Herstellung und Verwendung, in: DE 10 2009 030 045 B3 (Deutsches Patent- und Markenamt, München, 2011) Michael Lorenz Michael Lorenz, Holger Hochmuth, Christoph Grüner, Helena Hilmer, Alexander Lajn, Daniel Spemann, Matthias Brandt, Jan Zippel, Rüdiger Schmidt-Grund, Holger von Wenckstern, Marius Grundmann Oxide thin film heterostructures on large area, with flexible doping, low dislocation density and abrupt interfaces - grown by Pulsed Laser Deposition, in: Laser Chemistry 2011, 140976:1-27 (2011) (Hindawi, New York, 2011) F. Daume F. Daume, C. Scheit, S. Puttnins, A. Rahm, M. Grundmann Application of Series Resistance Imaging Techniques To Cu(In,Ga)Se2 Solar Cells, in: Proc. 26th European Photovoltaic Solar Energy Conference and Exhibition, p. 2955-2957 (2011) S. Puttnins S. Puttnins, S. Jander, K. Pelz, S. Heinker, F. Daume, A. Rahm, A. Braun, M. Grundmann The Influence of Front Contact and Buffer Layer Properties on CIGSe Solar Cell Breakdown Characteristics, in: Prof. 26th European Photovoltaic Solar Energy Conference and Exhibition, p. 2432-2434 (2011) Report of The Physics Institutes of Universität Leipzig 2010, in: Universität Leipzig, M. Grundmann, ed. Marius Grundmann Marius Grundmann The Physics of Semiconductors, An Introduction including Nanophysics and Applications, 2nd edition, in: (Springer, Heidelberg, 2010), ISBN 978-3-642-13883-6 Marius Grundmann Marius Grundmann Nanooptik, in: (euroforum fachwissen/IIR, 2010) M. Bachmann M. Bachmann, K. Goede, A.G. Beck-Sickinger, M. Grundmann, A. Irbäck, W. Janke Mikroskopischer Mechanismus der spezifischen Adhäsion von Peptiden an Halbleitersubstraten, in: Angew. Chemie 122(49), 9721-9724 (2010) M. Bachmann M. Bachmann, K. Goede, A.G. Beck-Sickinger, M. Grundmann, A. Irbäck, W. Janke Microscopic Mechanism of Specific Peptide Adhesion to Semiconductor Substrates, in: Angew. Chemie Int. Ed. 49(49), 9530-9533 (2010) H. Frenzel H. Frenzel, A. Lajn, H. von Wenckstern, M. Lorenz, F. Schein, Zh. Zhang, M. Grundmann Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and their Application in Transparent Integrated Circuits, in: Adv. Mater. 22(47), 5332-5349 (2010) M. Lorenz M. Lorenz, A. Lajn, H. Frenzel, H. von Wenckstern, M. Grundmann, P. Barquinha, R. Martins, E. Fortunato Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films, in: Appl. Phys. Lett. 97(24), 243506:1-3 (2010) D. Lausch D. Lausch, K. Petter, R. Bakowskie, C. Czekalla, J. Lenzner, H. von Wenckstern, M. Grundmann Identification of Pre-Breakdown Mechanism of Silicon Solar Cells at Low Reverse Voltages, in: Appl. Phys. Lett. 97(7), 073506:1-3 (2010) M. Brandt M. Brandt, M. Lange, M. Stölzel, A. Müller, G. Benndorf, J. Zippel, J. Lenzner, M. Lorenz, M. Grundmann Control of interface abruptness of polar MgZnO/ZnO quantum wells grown by pulsed laser deposition, in: Appl. Phys. Lett. 97(5), 052101:1-3 (2010) H. Frenzel H. Frenzel, F. Schein, A. Lajn, H. von Wenckstern, M. Grundmann High-gain integrated inverters based on ZnO MESFET technology, in: Appl. Phys. Lett. 96(11), 113502:1-3 (2010) H. Frenzel H. Frenzel, A. Lajn, H. von Wenckstern, M. Grundmann Ultrathin gate-contacts for MESFET devices: An alternative approach in transparent electronics, in: J. Appl. Phys. 107(11), 114515:1-6 (2010) A.O. Ankiewicz A.O. Ankiewicz, J.S. Martins, M.C. Carmo, M. Grundmann, S. Zhou, H. Schmidt, N.A. Sobolev Ferromagnetic resonance on metal nanocrystals in Fe and Ni implanted ZnO, in: J. Appl. Phys. 107(9), 09B518:1-3 (2010) M. Lange M. Lange, C. Dietrich, C. Czekalla, J. Zippel, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, M. Grundmann Luminescence Properties of ZnO/Zn1-xCdxO/ZnO double heterostructures, in: J. Appl. Phys. 107(9), 093530:1-8 (2010) A. Müller A. Müller, M. Stölzel, G. Benndorf, M. Lorenz, M. Grundmann Origin of the near-band-edge luminescence in MgxZn1-xO, in: J. Appl. Phys. 107(1), 013704:1-6 (2010) S. Lautenschlaeger S. Lautenschlaeger, S. Eisermann, M.N. Hofmann, U. Roemer, M. Pinnisch, A. Laufer, B.K. Meyer, H. von Wenckstern, A. Lajn, F. Schmidt, M. Grundmann, J. Blaesing, A. Krost Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers, in: J. Cryst. Growth 312(14), 2078-2082 (2010) A. Lajn A. Lajn, H. von Wenckstern, G. Benndorf, C.P. Dietrich, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films, in: J. Electr. Mat. 39, 595-600 (2010) H. von Wenckstern H. von Wenckstern, K. Brachwitz, M. Schmidt, C.P. Dietrich, M. Ellguth, M. Stölzel, M. Lorenz, M. Grundmann The E3 defect in MgxZn1-xO, in: J. Electr. Mat. 39, 584-588 (2010) J. Chai J. Chai, R.J. Mendelsberg, R.J. Reeves, J. Kennedy, H. von Wenckstern, M. Grundmann, K. Doyle, T.H. Meyers, S.M. Durbin Identification of a deep acceptor level in ZnO due to silver doping, in: J. Electr. Mat. 39, 577-583 (2010) H. von Wenckstern H. von Wenckstern, S. Müller, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann Dielectric passivation of ZnO-based Schottky diodes, in: J. Electr. Mat. 39, 559-562 (2010) Q.Y. Xu Q.Y. Xu, S.Q. Zhou, D. Bürger, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt Electrical control of magnetoresistance in highly insulating Co-doped ZnO, in: Jpn. J. Appl. Phys. 49(4R), 043002:1-4 (2010) J. Zippel J. Zippel, S. Heitsch, M. Stölzel, A. Müller, H. von Wenckstern, G. Benndorf, M. Lorenz, H. Hochmuth, M. Grundmann Optical properties of homo- and heteroepitaxial ZnO/MgxZn1-xO quantum wells grown by pulsed laser deposition, in: J. Lumin. 130(3), 520-526 (2010) S. Acharya S. Acharya, S. Chuothe, C. Sturm, H. Graener, R. Schmidt-Grund, M. Grundmann, G. Seifert Charge carrier dynamics of ZnO and ZnO-BaTiO3 thin films, in: J. Phys. Conf. Ser. 210, 012048:1-4 (2010) C. Sturm C. Sturm, H. Hilmer, R. Schmidt-Grund, M. Grundmann Polarization behavior of the exciton-polariton emission of ZnO-based microresonators, in: Proc. Mat. Res. Soc. 1208E, 1208-O18-08:1-6 (2010) H. von Wenckstern H. von Wenckstern, Z.P. Zhang, M. Lorenz, C. Czekalla, H. Frenzel, A. Lajn, M. Grundmann Light beam induced current measurements on ZnO Schottky diodes and MESFETs, in: Proc. Mat. Res. Soc. 1201, 1201-H04-02:1-6 (2010) C.P. Dietrich C.P. Dietrich, A. Müller, M. Stölzel, M. Lange, G. Benndorf, H. von Wenckstern, M. Grundmann Bound-exciton recombination in MgxZn1-xO thin films, in: Proc. Mat. Res. Soc. 1201, 1201-H03-08:1-6 (2010) M. Grundmann M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern, F. Schein, M. Lorenz ZnO-based MESFET Devices, in: Proc. Mat. Res. Soc. 1201, 1201-H01-01:1-5 (2010) C.P. Dietrich C.P. Dietrich, M. Lange, G. Benndorf, J. Lenzner, M. Lorenz, M. Grundmann Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys, in: New J. Phys. 12(3), 033030:1-10 (2010) M. Mäder M. Mäder, S. Perlt, T. Höche, H. Hilmer, M. Grundmann, B. Rauschenbach Gold nanostructure matrices by diffraction mask-projection laser ablation: extension to previously inaccessible substrates, in: Nanotechnology 21(17), 175304:1-5 (2010) Jan Zippel Jan Zippel, Michael Lorenz, Annette Setzer, Gerald Wagner, Nikolai Sobolev, Pablo Esquinazi, Marius Grundmann Defect induced ferromagnetism in undoped and Mn-doped zirconia thin films, in: Phys. Rev. B 82(12), 125209:1-5 (2010) Venkata M. Voora Venkata M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, H. Schmidt, N. Ianno, M. Schubert Interface polarization coupling in piezoelectric-semiconductor ferroelectric heterostructures, in: Phys. Rev. B 81(19), 195307:1-12 (2010) M. Brandt M. Brandt, H. von Wenckstern, G. Benndorf, M. Lange, C.P. Dietrich, C. Kranert, C. Sturm, R. Schmidt-Grund, H. Hochmuth, M. Lorenz, M. Grundmann, M.R. Wagner, M. Alic, C. Nenstiel, A. Hoffmann Identification of a donor-related recombination channel in ZnO thin films, in: Phys. Rev. B 81(7), 073306:1-4 (2010) Marius Grundmann Marius Grundmann, Tammo Böntgen, Michael Lorenz The Occurrence of Rotation Domains in Heteroepitaxy, in: Phys. Rev. Lett. 105(14), 146102:1-4 (2010) W. Anwand W. Anwand, G. Brauer, T.E. Cowan, V. Heera, H. Schmidt, W. Skorupa, H. von Wenckstern, G. Benndorf, M. Grundmann Structural characterization of H plasma-doped ZnO single crystals by Hall measurements and photoluminescence studies, in: Phys. Status Solidi A 207(11), 2426-2431 (2010) M. Grundmann M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, H. von Wenckstern Transparent Semiconducting Oxides: Materials and Devices, in: Phys. Status Solidi A 207(6), 1437-1449 (2010) J. Zippel J. Zippel, M. Stölzel, A. Müller, G. Benndorf, M. Lorenz, H. Hochmuth, M. Grundmann Electronic coupling in ZnO/MgxZn1-xO double quantum wells grown by pulsed laser deposition, in: Phys. Status Solidi B 247(2), 398-404 (2010) O. Albrecht O. Albrecht, R. Zierold, C. Patzig, J. Bachmann, C. Sturm, B. Rheinländer, M. Grundmann, D. Görlitz, B. Rauschenbach, K. Nielsch Magnetic tubular nanostructures based on glancing-angle deposited templates and atomic layer deposition, in: Phys. Status Solidi B 247(6), 1365-1371 (2010) R. Schmidt-Grund R. Schmidt-Grund, H. Hilmer, A. Hinkel, C. Sturm, B. Rheinländer, V. Gottschalch, M. Lange, J. Zúñiga-Pérez, M. Grundmann Two-dimensional confined photonic wire resonators - strong light-matter coupling, in: Phys. Status Solidi B 247(6), 1351-1364 (2010) R. Kaden R. Kaden, G. Wagner, C. Strum, R. Schmidt-Grund, H. von Wenckstern, A. Prager, K. Bente, M. Grundmann Synthesis and physical properties of cylindrite micro tubes and lamellae, in: Phys. Status Solidi B 247(6), 1335-1350 (2010) C. Czekalla C. Czekalla, T. Nobis, A. Rahm, B. Cao, J. Zúñiga-Pérez, C. Sturm, R. Schmidt-Grund, M. Lorenz, M. Grundmann Whispering gallery modes in ZnO nano- and microwires, in: Phys. Status Solidi B 247(6), 1282-1293 (2010) M. Lorenz M. Lorenz, A. Rahm, B. Cao, J. Zúñiga-Pérez, E.M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, M. Grundmann Self-organized growth of ZnO-based nano- and microstructures, in: Phys. Status Solidi B 247(6), 1265-1281 (2010) M. Grundmann M. Grundmann Architecture of nano- and microdimensional building blocks, in: Phys. Status Solidi B 247(6), 1257-1264 (2010) Scientific report of the Forschergruppe 522, in: Phys. Status Solidi B 247(6), 1257-1392 (2010), M. Grundmann, ed. M. Schmidt M. Schmidt, M. Ellguth, F. Schmidt, Th. Lüder, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa Defects in a nitrogen-implanted ZnO thin film, in: Phys. Status Solidi B 247(5), 1220-1226 (2010) C. Scarlat C. Scarlat, K.M. Mok, S. Zhou, M. Vinnichenko, M. Lorenz, M. Grundmann, M. Helm, M. Schubert, H. Schmidt Voigt effect measurement on PLD grown NiO thin films, in: Phys. Status Solidi C 7(2), 334-337 (2010) G. Zimmermann G. Zimmermann, M. Lange, B. Cao, M. Lorenz, M. Grundmann Resistivity control of ZnO nanowires by Al-doping, in: Phys. Status Solidi RRL 4(3-4), 82-84 (2010) H. Hilmer H. Hilmer, C. Sturm, R. Schmidt-Grund, B. Rheinländer, M. Grundmann Observation of strong light-matter coupling by spectroscopic ellipsometry, in: Superlatt. Microstr. 47(1), 19-23 (2010) C.P. Dietrich C.P. Dietrich, M. Lange, G. Benndorf, H. von Wenckstern, M. Grundmann Donor-acceptor pair recombination in non-stoichiometric ZnO thin films, in: Sol. St. Comm. 150(7-8), 379-382 (2010) M. Lorenz M. Lorenz, M. Brandt, M. Lange, G. Benndorf, H. von Wenckstern, D. Klimm, M. Grundmann Homoepitaxial MgxZn1-xO (0 ≤ x ≤ 0.22) thin films grown by pulsed laser deposition, in: Thin Solid Films 518(16), 4623-4629 (2010) Marius Grundmann Marius Grundmann ZnO-based alloys for nano-scale optoelectronic devices, in: BuildMoNa Annual Report 2010, p. 34-39 (2010) B. Cao B. Cao, J. Zúñiga-Pérez, C. Czekalla, H. Hilmer, J. Lenzner, N. Boukos, A. Travlos, M. Lorenz, M. Grundmann Tuning the lateral density of ZnO nanowire arrays and its application as physical templates for radial nanowire heterostructures, in: J. Mat. Chem. 20(19), 3848-3854 (2010) B.Q. Cao B.Q. Cao, M. Lorenz, G. Zimmermann, C. Czekalla, M. Brandt, H. von Wenckstern, M. Grundmann p-type Phosphorus Doped ZnO Wires for Optoelectronic Applications, in: Nanowires, p. 117-132 (2010), P. Prete, ed., ISBN 978-953-7619-79-4 M. Grundmann M. Grundmann, H. Frenzel, A. Lajn, H. von Wenckstern TRANSPARENT RECTIFYING METAL/METAL OXIDE/SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND USE, in: PCT Application WO 2010/149616 A1 S. Puttnins S. Puttnins, H. Zachmann, A. Rahm, G. Benndorf, M. Grundmann Quantum Efficiency Analysis of Ion Beam Assisted Deposition of Cu(In,Ga)Se2 Solar Cells on Flexible Substrates, in: Proc. 25th European Photovoltaic Solar Energy Conference and Exhibition, p. 3369-3371 (2010) Report of The Physics Institutes of Universität Leipzig 2009, in: Universität Leipzig, M. Grundmann, ed. H. Frenzel H. Frenzel, M. Lorenz, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Grundmann ZnO-based metal-semiconductor field-effect transistors on glass substrates, in: Appl. Phys. Lett. 95(15), 153503:1-3 (2009) M. Voora M. Voora, T. Hofmann, M. Brandt, M. Lorenz, N. Ashkenov, M. Grundmann, M. Schubert Electrical properties of ZnO-BaTiO3-ZnO heterostructures with asymmetric interface charge distribution, in: Appl. Phys. Lett. 95(8), 082902:1-3 (2009) V.M. Voora V.M. Voora, T. Hofman, M. Schubert, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures, in: Appl. Phys. Lett. 94(14), 142904:1-3 (2009) Shengqiang Zhou Shengqiang Zhou, K. Potzger, Qingyu Xu, G. Talut, M. Lorenz, W. Skorupa, M. Helm, J. Fassbender, M. Grundmann, H. Schmidt Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?, in: arxiv: 0907.3536 (2009) H. von Wenckstern H. von Wenckstern, J. Zippel, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann Two-dimensional electron gases in MgZnO/ZnO heterostructures, in: Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 99-100 (2009) H. Frenzel H. Frenzel, H. von Wenckstern, A. Lajn, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann Interface effects in ZnO metal-insulator-semiconductor and metal-semiconductor structures, in: Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 469-470 (2009) R. Schmidt-Grund R. Schmidt-Grund, C. Sturm, H. Hilmer, J. Sellmann, C. Czekalla, B. Rheinländer, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann Exciton-polaritons in ZnO microcavity resonators, in: Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 175-176 (2009) H. Hilmer H. Hilmer, J. Sellmann, Ch. Sturm, R. Schmidt-Grund, B. Rheinländer, H. Hochmuth, J. Lenzner, M. Lorenz, M. Grundmann PLD Growth of High Reflective All-Oxide Bragg Reflectors for ZnO Resonators, in: Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 151-152 (2009) H. von Wenckstern H. von Wenckstern, A. Lajn, A. Laufer, B.K. Meyer, H. Hochmuth M. Lorenz, M. Grundmann Ag related defect state in ZnO thin films, in: Proc. 29th Int. Conf. on the Physics of Semiconductors (ICPS-29), (Rio de Janeiro, Brazil, 2008), AIP Conf. Proc. 1199, 122-123 (2009) M.W. Allen M.W. Allen, S.M. Durbin, X. Weng, J.M. Redwing, K. Sarpatwari, S.E. Mohney, H. von Wenckstern, M. Grundmann Temperature Dependent Properties of Nearly Ideal ZnO Schottky Diodes, in: IEEE Transact. Electr. Dev. 56(9), 2160-2164 (2009) M. Grundmann M. Grundmann, C.P. Dietrich Lineshape Theory of Photoluminescence from Semiconductor Alloys, in: J. Appl. Phys. 106(12), 123521:1-10 (2009) Q.Y. Xu Q.Y. Xu, S. Zhou, D. Markó, K. Potzger, J. Fassbender, M. Vinnichenko, M. Helm, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt Paramagnetism in Co-doped ZnO films, in: J. Phys. D: Appl. Phys. 42(8), 085001:1-5 (2009) M. Brandt M. Brandt, H. Frenzel, H. Hochmuth, M. Lorenz, M. Grundmann, J. Schubert Ferroelectric thin film field-effect transistors based on ZnO/BaTiO3 heterostructures, in: J. Vac. Sci. Technol. B 27(3), 1789-1793 (2009) C. Czekalla C. Czekalla, C. Sturm, R. Schmidt-Grund, B. Cao, J. Zúñiga Pérez, M. Lorenz, M. Grundmann Optical characterization of zinc oxide microlasers and microwire core-shell heterostructures, in: J. Vac. Sci. Technol. B 27(3), 1780-1783 (2009) A. Lajn A. Lajn, H. von Wenckstern, Z. Zhang, C. Czekalla, G. Biehne, J. Lenzner, H. Hochmuth, M. Lorenz, M. Grundmann, S. Wickert, C. Vogt, R. Denecke Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type ZnO, in: J. Vac. Sci. Technol. B 27(3), 1769-1773 (2009) M. Lange M. Lange, J. Zippel, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann Temperature Dependence of Localization Effects of Excitons in ZnO/CdxZn1-xO/ZnO Double Heterostructures, in: J. Vac. Sci. Technol. B 27(3), 1741-1745 (2009) J. Zippel J. Zippel, J. Lenzner, G. Benndorf, M. Lange, H. Hochmuth, M. Lorenz, M. Grundmann Electronic coupling in MgxZn1-xO/ZnO double quantum wells, in: J. Vac. Sci. Technol. B 27(3), 1735-1740 (2009) C. Sturm C. Sturm, H. Hilmer, R. Schmidt-Grund, C. Czekalla, J. Sellmann, J. Lenzner, M. Lorenz, M. Grundmann Strong exciton-photon coupling in ZnO based resonators, in: J. Vac. Sci. Technol. B 27(3), 1726-1730 (2009) M. Lorenz M. Lorenz, B. Cao, G. Zimmermann, G. Biehne, C. Czekalla, H. Frenzel, M. Brandt, H. von Wenckstern, M. Grundmann Stable p-type ZnO:P nanowire/n-type ZnO:Ga film junctions, reproducibly grown by two-step pulsed laser deposition, in: J. Vac. Sci. Technol. B 27(3), 1693-1697 (2009) M. Brandt M. Brandt, H. von Wenckstern, Ch. Meinecke, T. Butz, H. Hochmuth, M. Lorenz, M. Grundmann Dopant activation in homoepitaxial MgZnO:P thin films, in: J. Vac. Sci. Technol. B 27(3), 1604-1608 (2009) M. Schmidt M. Schmidt, M. Ellguth, C. Czekalla, H. von Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa, M. Helm, Q. Gu, Ch.Ch. Ling Defects in zinc-implanted ZnO thin films, in: J. Vac. Sci. Technol. B 27(3), 1597-1600 (2009) R. Schmidt-Grund R. Schmidt-Grund, A. Hinkel, H. Hilmer, J. Zúñiga-Pérez, C. Sturm, B. Rheinländer, M. Grundmann ZnO nano-pillar resonators with coaxial Bragg reflectors, in: Proc. Mat. Res. Soc. 1178, 1178-AA10-13:1-7 (2009) C. Sturm C. Sturm, H. Hilmer, R. Schmidt-Grund, M. Grundmann Observation of strong exciton-photon coupling at temperatures up to 410 K, in: New J. Phys. 11(7), 073044:1-12 (2009) M. Willander M. Willander, O. Nur, Q.X. Zhao, L.L. Yang, M. Lorenz, B.Q. Cao, J. Zúñiga-Pérez, C. Czekalla, G. Zimmermann, M. Grundmann, A. Bakin, A. Behrends, M. Al- Suleiman, A. Al-Shaer, A. Che Mofor, B. Postels, A. Waag, N. Boukos, A. Travlos, J. Guinard, D. Le Si Dang Zinc Oxide Nanorods Based Photonic Devices: Recent Progress in Growth, Light Emitting Diodes and Lasers, in: Nanotechnology 20(33), 332001:1-40 (2009) B.Q. Cao B.Q. Cao, J. Zúñiga-Pérez, N. Boukos, C. Czekalla, H. Hilmer, J. Lenzner, A. Travlos, M. Lorenz, M. Grundmann Homogeneous core/shell ZnO/MgZnO quantum well heterostructures on vertical ZnO nanowires, in: Nanotechnology 20(30), 305701:1-8 (2009) M. Khalid M. Khalid, M. Ziese, A. Setzer, P. Esquinazi, M. Lorenz, H. Hochmuth, M. Grundmann, D. Spemann, T. Butz, G. Brauer, W. Anwand, G. Fischer, W.A. Adeagbo, W. Hergert, A. Ernst Defect-induced magnetic order in pure ZnO films, in: Phys. Rev. B 80(3), 035331:1-5 (2009) H. von Wenckstern H. von Wenckstern, H. Schmidt, M. Brandt, A. Lajn, R. Pickenhain, M. Lorenz, M. Grundmann, D.M. Hofmann, A. Polity, B.K. Meyer, H. Saal, M. Binnewies, A. Börger, K.-D. Becker, V.A. Tikhomirov, K. Jug Anionic and cationic substitution in ZnO, in: Prog. Sol. Stat. Chem. 37(2-3), 153-172 (2009) A.O. Ankiewicz A.O. Ankiewicz, W. Gehlhoff, J.S. Martins, A.S. Pereira, S. Pereira, A. Hoffmann, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, M.C. Carmo, T. Trindade, N.A. Sobolev Magnetic and structural properties of transition metal doped zinc-oxide nanostructures, in: Phys. Status Solidi B 246(4), 766-770 (2009) Frank Lipski Frank Lipski, Sarad B. Thapa, Joachim Hertkorn, Thomas Wunderer, Stephan Schwaiger, Ferdinand Scholz, Martin Feneberg, Michael Wiedenmann, Klaus Thonke, Holger Hochmuth, Michael Lorenz, Marius Grundmann Studies towards freestanding GaN in hydride vapor phase epitaxy by in-situ etching of a sacrificial ZnO buffer layer, in: Phys. Status Solidi C 6(52), S352-S355 (2009) Dominik Lausch Dominik Lausch, Kai Petter, Holger von Wenckstern, Marius Grundmann Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells, in: Phys. Status Solidi RRL 3(2-3), 70-72 (2009) M. Lorenz M. Lorenz, M. Brandt, G. Wagner, H. Hochmuth, G. Zimmermann, H. von Wenckstern, M. Grundmann MgZnO:P Homoepitaxy by Pulsed Laser Deposition: Pseudomorphic Layer-by-Layer Growth and High Electron Mobility, in: Proc. SPIE 7217, 72170N:1-15 (2009) H. Frenzel H. Frenzel, A. Lajn, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Grundmann ZnO-based metal-semiconductor field-effect transistors with Ag-, Pt-, Pd-, and Au-Schottky gates, in: Thin Solid Films 518(4), 1119-1123 (2009) M. Brandt M. Brandt, H. von Wenckstern, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann Formation of a two-dimensional electron gas in MgZnO/ZnO heterostructures and quantum wells, in: Thin Solid Films 518(4), 1048-1052 (2009) Marius Grundmann Marius Grundmann Transparent oxide electronic devices, in: BuildMoNa Annual Report 2009, p. 33-35 (2009) R. Bakowskie R. Bakowskie, H. von Wenckstern, D. Lausch, M. Müller, K. Petter, M. Grundmann Thermal admittance spectroscopy of multicrystalline silicon wafers and solar cells, in: Proc. 24th European Photovoltaic Solar Energy Conference, p. 2100-2102 (2009) D. Lausch D. Lausch, K. Petter, R. Bakowskie, H. von Wenckstern, M. Grundmann Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells, in: Proc. 24th European Photovoltaic Solar Energy Conference, p. 2053-2055 (2009) Report of The Physics Institutes of Universität Leipzig 2008, in: Universität Leipzig, M. Grundmann, ed. S.Q. Zhou S.Q. Zhou, K. Potzger, Q.Y. Xu, G. Talut, M. Lorenz, W. Skorupa, M. Helm, J. Fassbender, M. Grundmann, H. Schmidt Ferromagnetic transition metal implanted ZnO: A diluted magnetic semiconductor?, in: Vacuum 83(Suppl. 1), S13-S19 (2009) J. Bachmann J. Bachmann, R. Zierold, Y.T. Chong, R. Hauert, Ch. Sturm, R. Schmidt-Grund, B. Rheinländer, M. Grundmann, U. Gösele, K. Nielsch Selbstkatalytische Atomlagenabscheidung von Siliciumdioxid, in: Angew. Chemie 120(33), 6272-6274 (2008) J. Bachmann J. Bachmann, R. Zierold, Y.T. Chong, R. Hauert, Ch. Sturm, R. Schmidt-Grund, B. Rheinländer, M. Grundmann, U. Gösele, K. Nielsch A Practical, Self-Catalytic, Atomic Layer Deposition of Silicon Dioxide, in: Angew. Chemie Int. Ed. 47(33), 6177-6179 (2008) S. Zhou S. Zhou, Q. Xu, K. Potzger, G. Talut, R. Grötzschel, J. Fassbender, M. Vinnichenko, J. Grenzer, M. Helm, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt Room temperature ferromagnetism in carbon-implanted ZnO, in: Appl. Phys. Lett. 93(23), 232507:1-3 (2008) C. Czekalla C. Czekalla, Chris Sturm, Rüdiger Schmidt-Grund, Bingqiang Cao, Michael Lorenz, Marius Grundmann Whispering Gallery Mode Lasing in Zincoxide Microwires, in: Appl. Phys. Lett. 92(24), 241102:1-3 (2008) H. Frenzel H. Frenzel, A. Lajn, M. Brandt, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann ZnO metal-semiconductor field-effect transistors with Ag-Schottky-gates, in: Appl. Phys. Lett. 92(19), 192108:1-3 (2008) Q. Xu Q. Xu, H. Schmidt, S. Zhou, K. Potzger, M. Helm, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, Ch. Meinecke, M. Grundmann Room temperature ferromagnetism in ZnO films due to defects, in: Appl. Phys. Lett. 92(8), 082508:1-3 (2008) R. Schmidt-Grund R. Schmidt-Grund, B. Rheinländer, C. Czekalla, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann Exciton-polariton formation at room temperature in a planar ZnO resonator structure, in: Appl. Phys. A 93, 331-337 (2008) Shengqiang Zhou Shengqiang Zhou, Qingyu Xu, Kay Potzger, Georg Talut, Rainer Groetzschel, Juergen Fassbender, Mykola Vinnichenko, Joerg Grenzer, Manfred Helm, Holger Hochmuth, Michael Lorenz, Marius Grundmann, Heidemarie Schmidt Room temperature ferromagnetism in carbon-implanted ZnO, in: arxiv: 0811.3487 (2008) N. Ghosh N. Ghosh, J. Barzola Quiquia, Q. Xu, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt Andreev reflection and spin polarization measurement of Co/YBCO junction, in: arxiv: 0804.0170 (2008) S. Müller S. Müller, C. Ronning, M. Lorenz, C. Czekalla, G. Benndorf, H. Hochmuth, M. Grundmann, H. Schmidt Intense white photoluminescence emission of V-implanted zinc oxide thin films, in: J. Appl. Phys. 104(12), 123504:1-7 (2008) M. Brandt M. Brandt, H. von Wenckstern, H. Schmidt, A. Rahm, G. Biehne, G. Benndorf, H. Hochmuth, M. Lorenz, Ch. Meinecke, T. Butz, M. Grundmann High electron mobility of phosphorous doped homoepitaxial ZnO thin films grown by pulsed laser deposition, in: J. Appl. Phys. 104(1), 013708:1-6 (2008) A.S. Pereira A.S. Pereira, S. Pereira, T. Trindade, A.O. Ankiewicz, M.C. Carmo, N.A. Sobolev, W. Gehlhoff, A. Hoffmann, M. Grundmann Surface modification of Co-doped ZnO nanocrystals and its effect on the magnetic properties, in: J. Appl. Phys. 103(7), 07D140:1-3 (2008) S.B. Thapa S.B. Thapa, J. Hertkorn, T. Wunderer, F. Lipski, F. Scholz, A. Reiser, Y. Xie, M. Feneberg, K. Thonke, R. Sauer, M. Dürrschnabel, L.D. Yao, D. Gerthsen, H. Hochmuth, M. Lorenz, M. Grundmann MOVPE growth of GaN around ZnO nanopillars, in: J. Cryst. Growth 310(23), 5139-5142 (2008) V.M. Voora V.M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, M. Schubert Interface-charge-coupled polarization response of Pt-BaTiO3-ZnO-Pt heterojunctions: A physical model approach, in: J. Electr. Mat. 37, 1029-1034 (2008) R. Schmidt-Grund R. Schmidt-Grund, B. Rheinländer, E.M. Kaidashev, M. Lorenz, M. Grundmann, D. Fritsch, M.M. Schubert, H. Schmidt, C.M. Herzinger Vacuum Ultraviolet Dielectric Function and Band Structure of ZnO, in: J. Korean Phys. Soc. 53(1), 88-93 (2008) Holger von Wenckstern Holger von Wenckstern, Matthias Brandt, Heidemarie Schmidt, Christian Hanisch, Gabriele Benndorf, Holger Hochmuth, Michael Lorenz, Marius Grundmann Homoepitaxial ZnO thin films by pulsed-laser deposition, in: J. Korean Phys. Soc. 53(9), 3064-3067 (2008) H. von Wenckstern H. von Wenckstern, G. Biehne, M. Lorenz, M. Grundmann, F.D. Auret, W.E. Meyer, P.J. Janse van Rensburg, M. Hayes, J.M. Nel Dependence of trap concentrations in ZnO thin films on annealing conditions, in: J. Korean Phys. Soc. 53(9), 2861-2863 (2008) D. Fritsch D. Fritsch, H. Schmidt, R. Schmidt-Grund, M. Grundmann Intensity of Optical Absorption Close to the Band Edge in Strained ZnO Films, in: J. Korean Phys. Soc. 53(1), 123-126 (2008) F.D. Auret F.D. Auret, W.E. Meyer, P.J. Janse van Rensburg, M. Hayes, J.M. Nel, H. von Wenckstern, H. Hochmuth, G. Biehne, M. Lorenz, M. Grundmann Electronic properties of shallow level defects in ZnO grown by pulsed laser deposition, in: J. Phys. Conf. Ser. 100, 042038:1-4 (2008) Q. Xu Q. Xu, H. Schmidt, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, Ch. Meinecke, M. Grundmann Room temperature ferromagnetism in Nd- and Mn-codoped ZnO films, in: J. Phys. D: Appl. Phys. 41(10), 105012:1-5 (2008) Venkata Voora Venkata Voora, Tino Hofmann, Ann Kjerstad, Matthias Brandt, Michael Lorenz, Marius Grundmann, Mathias Schubert Interface-charge-coupled polarization response model of Pt-BaTiO3-ZnO-Pt heterojunctions: Physical parameters variation, in: Proc. Mat. Res. Soc. 1074, I01-11:1-6 (2008) C. Czekalla C. Czekalla, J. Guinard, C. Hanisch, B. Cao, E.M. Kaidashev, N. Boukos, A. Travlos, J. Renard, B. Gayral, D. Le Si Dang, M. Lorenz, M. Grundmann Spatial fluctuations of the optical emission from single ZnO/MgZnO nanowire quantum wells, in: Nanotechnology 19(11), 115202:1-6 (2008) Q. Xu Q. Xu, L. Hartmann, S. Zhou, A. Mücklich, K. Potzger, M. Helm, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann, H. Schmidt Spin manipulation in Co doped ZnO, in: Phys. Rev. Lett. 101(7), 076601:1-4 (2008) M. Lorenz M. Lorenz, G. Wagner, A. Rahm, H. Schmidt, H. Hochmuth, H. Schmid, W. Mader, M. Brandt, H. von Wenckstern, M. Grundmann Homoepitaxial ZnO Thin Films by PLD: Structural Properties, in: Phys. Status Solidi C 5(10), 3280-3287 (2008) C. Sturm C. Sturm, T. Chavdarov, R. Schmidt-Grund, B. Rheinländer, C. Bundesmann, H. Hochmuth, M. Lorenz, M. Schubert, M. Grundmann Investigation of the free charge carrier properties at the ZnO-sapphire interface in a- plane ZnO films studied by generalized infrared ellipsometry, in: Phys. Status Solidi C 5(5), 1350-1353 (2008) V.M. Voora V.M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, M. Schubert Electrooptic ellipsometry study of piezoelectric BaTiO3-ZnO heterostructures, in: Phys. Status Solidi C 5(5), 1328-1331 (2008) J. Sellmann J. Sellmann, Ch. Sturm, R. Schmidt-Grund, Ch. Czekalla, J. Lenzner, H. Hochmuth, B. Rheinländer, M. Lorenz, M. Grundmann Structural and optical properties of ZrO2 and Al2O3 thin films and Bragg reflectors grown by pulsed laser deposition, in: Phys. Status Solidi C 5(5), 1240-1243 (2008) B. Cao B. Cao, M. Lorenz, M. Brandt, H. von Wenckstern, J. Lenzner, G. Biehne, M. Grundmann p-type conducting ZnO:P microwires prepared by direct carbothermal growth, in: Phys. Status Solidi RRL 2(1), 37-39 (2008) M. Mäder M. Mäder, J. W. Gerlach, T. Höche, C. Czekalla, M. Lorenz, M. Grundmann, B. Rauschenbach ZnO nanowall networks grown on DiMPLA pre-patterned thin gold films, in: Phys. Status Solidi RRL 2(5), 200-202 (2008) B. Q. Cao B. Q. Cao, M. Lorenz, H. von Wenckstern, C. Czekalla, M. Brandt, J. Lenzner, G. Benndorf, G. Biehne, M. Grundmann Phosphorus doped ZnO nanowires: acceptor-related cathodoluminescence and p-type conducting FET-characteristics, in: Proc. SPIE 6895, 68950V:1-12 (2008) D. Hofstetter D. Hofstetter, Y. Bonetti, E. Baumann, F.R. Giorgetta, A.-H. El-Shaer, A. Bakin, A. Waag, R. Schmidt-Grund, M. Grundmann, M. Schubert Characterization of an optically pumped 3rd order distributed feedback laser, in: Proc. SPIE 6895, 68950J:1-8 (2008) H. von Wenckstern H. von Wenckstern, M. Brandt, H. Schmidt, G. Benndorf, J. Zippel, H. Hochmuth,M. Lorenz, M. Grundmann Properties of homoepitaxial ZnO and ZnO:P thin films grown by pulsed-laser deposition, in: Proc. SPIE 6895, 689505:1-11 (2008) A. Müller A. Müller, G. Benndorf, S. Heitsch, C. Sturm, M. Grundmann Exciton-phonon coupling and exciton thermalization in MgxZn1-xO thin films, in: Sol. St. Comm. 148(11-12), 570-572 (2008) Qingyu Xu Qingyu Xu, Heidemarie Schmidt, Shengqiang Zhou, Kay Potzger, Manfred Helm, Holger Hockmuth, Michael Lorenz, Christoph Meinecke, Marius Grundmann Magnetic and transport properties of Cu1.05Cr0.89Mg0.05O2 and Cu0.96Cr0.95Mg0.05Mn0.04O2 films, in: Thin Solid Films 516(23), 8543-8546 (2008) Q. Xu Q. Xu, L. Hartmann, H. Schmidt, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, C. Meinecke, M. Grundmann Magnetotransport properties of Zn90Mn7.5Cu2.5O thin films, in: Thin Solid Films 516(6), 1160-1163 (2008) Marius Grundmann Marius Grundmann ZnO-nano-wires for miniaturised light sources, in: BuildMoNa Annual Report 2008, p. 29-31 (2008) E.M. Kaidashev E.M. Kaidashev, M. Lorenz, J. Lenzner, A. Ramm, T. Nobis, M. Grundmann, N. Zakharov, A.T. Kozakov, S.I. Shevtsova, K.G. Abdulvakhidov, V.E. Kaidashev Structure and optical properties of ZnO nanowires fabricated by pulsed laser deposition on GaN/Si(111) films with the use of Au and NiO catalysts, in: Bull. Russ. Acad. Sci.: Physics 72(8), 1129-1131 (2008) Marius Grundmann Marius Grundmann, Andreas Rahm, Thomas Nobis, Michael Lorenz, Christian Czekalla, Evgeni M. Kaidashev, Jörg Lenzner, Nikos Boukos, Anastasios Travlos Growth and characterization of ZnO nano- and microstuctures, in: Handbook of Self-Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics, p. 293-323 (2008), M. Henini, ed. (Elsevier, Amsterdam, 2008), ISBN 978-0-08-046325-4 Report of The Physics Institutes of Universität Leipzig 2007, in: Universität Leipzig, M. Grundmann, ed. H. Schmidt H. Schmidt, M. Wiebe, B. Dittes, M. Grundmann Meyer-Neldel rule in ZnO, in: Appl. Phys. Lett. 91(23), 232110:1-3 (2007) Daniel Hofstetter Daniel Hofstetter, Yargo Bonetti, Fabrizio R. Giorgetta, Abdel-Hamid El-Shaer, Andrey Bakin, Andreas Waag, Rüdiger Schmidt-Grund, Mathias Schubert, Marius Grundmann Demonstration of an ultraviolet ZnO-based optically pumped third order distributed feedback laser, in: Appl. Phys. Lett. 91(11), 111108:1-3 (2007) Q. Xu Q. Xu, H. Schmidt, L. Hartmann, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, Ch. Meinecke, M. Grundmann Room temperature ferromagnetism in Mn-doped ZnO films mediated by acceptor levels, in: Appl. Phys. Lett. 91(9), 092503:1-3 (2007) Holger von Wenckstern Holger von Wenckstern, Martin Allen, Heidemarie Schmidt, Paul Miller, R. Reeves, Steve Durbin, Marius Grundmann Defects in hydrothermally grown bulk ZnO, in: Appl. Phys. Lett. 91(2), 022913:1-3 (2007) Y. Liu Y. Liu, Q. Xu, H. Schmidt, L. Hartmann, H. Hochmuth, M. Lorenz, M. Grundmann, X. Han, Z. Zhang Co location and valence state determination in ferromagnetic ZnO:Co thin films by atom-location-by-channeling-enhanced-microanalysis electron energy-loss spectroscopy, in: Appl. Phys. Lett. 90(15), 154101:1-3 (2007) M. Lorenz M. Lorenz, R. Johne, H.P.D. Schenk, S.I. Borenstain, A. Schön, C. Bekeny, T. Voß, J. Gutowski, T. Nobis, H. Hochmuth, J. Lenzner, M. Grundmann Self absorption in the room-temperature cathodoluminescence of ZnO scintillator thin films on sapphire, in: Appl. Phys. Lett. 89(24), 243510:1-3 (2007) S. Heitsch S. Heitsch, G. Benndorf, G. Zimmermann, C. Schulz, D.Spemann, H. Hochmuth, H. Schmidt, Th. Nobis, M. Lorenz, M. Grundmann Optical and structural properties of MgZnO/ZnO hetero- and double heterostructures grown by pulsed laser deposition, in: Appl. Phys. A 88, 99-104 (2007) R. Johne R. Johne, M. Lorenz, H. Hochmuth, J. Lenzner, H. von Wenckstern, G. Zimmermann, H. Schmidt, R. Schmidt-Grund, M. Grundmann Cathodoluminescence of large-area PLD grown ZnO thin films measured in transmission and reflection, in: Appl. Phys. A 88, 89-93 (2007) A. Rahm A. Rahm, M. Lorenz, Th. Nobis, G. Zimmermann, M. Grundmann, B. Fuhrmann, F. Syrowatka Pulsed Laser Deposition and characterization of ZnO nanowires with regular lateral arrangement, in: Appl. Phys. A 88, 31-34 (2007) H. Schmidt H. Schmidt, M. Diaconu, H. Hochmuth, G. Benndorf, H. von Wenckstern, G. Biehne, M. Lorenz, M. Grundmann Electrical and optical spectroscopy on ZnO:Co films, in: Appl. Phys. A 88, 157-160 (2007) H. von Wenckstern H. von Wenckstern, M. Brandt, H. Schmidt, G. Biehne, R. Pickenhain, H. Hochmuth, M. Lorenz, M. Grundmann Donor like defects in ZnO substrate materials and ZnO thin films, in: Appl. Phys. A 88, 135-139 (2007) H. von Wenckstern H. von Wenckstern, G. Benndorf, S. Heitsch, J. Sann, M. Brandt, H. Schmidt, J. Lenzner, M. Lorenz, A. Y. Kuznetsov, B.K. Meyer, M. Grundmann Properties of phosphorous doped ZnO, in: Appl. Phys. A 88, 125-128 (2007) N. Ghosh N. Ghosh, H. Schmidt, M. Grundmann Andreev reflections at large ferromagnet/high-TC superconductor area junctions with rough interface, in: arxiv: 0712.2131 (2007) Karsten Goede Karsten Goede, Michael Bachmann, Wolfhard Janke, Marius Grundmann Specific Adhesion of Peptides on Semiconductor Surfaces in Experiment and Simulation, in: arxiv: 0710.4562 (2007) A.O. Ankiewicz A.O. Ankiewicz, W. Gehlhoff, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, M.C. Carmo, N.A. Sobolev Electron Paramagnetic Resonance Characterization of Mn- and Co-Doped ZnO Nanowires, in: Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 63-64 (2007) Karsten Goede Karsten Goede, Michael Bachmann, Wolfhard Janke, Marius Grundmann Specific adhesion of peptides on semiconductor surfaces in experiment and simulation, in: Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 611-612 (2007) Susanne Heitsch Susanne Heitsch, Gregor Zimmermann, Jörg Lenzner, Holger Hochmuth, Gabriele Benndorf, Michael Lorenz, Marius Grundmann Photoluminescence of MgxZn1-xO/ZnO Quantum Wells Grown by Pulsed Laser Deposition, in: Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 409-410 (2007) Daniel Fritsch Daniel Fritsch, Heidemarie Schmidt, Marius Grundmann Calculated optical properties of wurtzite GaN and ZnO, in: Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 325-326 (2007) H. Frenzel H. Frenzel, H. von Wenckstern, A. Weber, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann Measurement of deep intrinsic defects in thin ZnO films via mid-infrared photocurrent spectroscopy, in: Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 301-302 (2007) R. Schmidt-Grund R. Schmidt-Grund, N. Ashkenov, M.M. Schubert, W. Czakai, D. Faltermeier, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO, in: Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 271-272 (2007) Chris Sturm Chris Sturm, Rüdiger Schmidt-Grund, Ronny Kaden, Holger von Wenckstern, Bernd Rheinländer, Klaus Bente, Marius Grundmann Optical Properties of Cylindrite, in: Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 1483-1484 (2007) Qingyu Xu Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Chris Sturm, Daniel Spemann, Marius Grundmann The magnetotransport properties of Co-doped ZnO films, in: Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 1187-1188 (2007) R. Schmidt-Grund R. Schmidt-Grund, B. Rheinländer, T. Gühne, H. Hochmuth, V. Gottschalch, A. Rahm, J. Lenzner, M. Grundmann ZnO micro-pillar resonators with coaxial Bragg reflectors, in: Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 1137-1138 (2007) Thomas Nobis Thomas Nobis, Andreas Rahm, Michael Lorenz, Marius Grundmann Temperature dependence of the whispering gallery effect in ZnO nanoresonators, in: Proc. 28th Int. Conf. on the Physics of Semiconductors (ICPS-28), (Wien, Austria, 2006), AIP Conf. Proc. 893, 1057-1058 (2007) S. Heitsch S. Heitsch, Gregor Zimmermann, Daniel Fritsch, Chris Sturm, Rüdiger Schmidt-Grund, Christian Schulz, Holger Hochmuth, Daniel Spemann, Gabriele Benndorf, Bernd Rheinländer, Thomas Nobis, Michael Lorenz, Marius Grundmann Luminescence and surface properties of MgxZn1-xO thin films grown by pulsed laser deposition, in: J. Appl. Phys. 101(8), 083521:1-6 (2007) Qingyu Xu Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Chris Sturm, Daniel Spemann, Marius Grundmann Magnetoresistance and anomalous Hall effect in magnetic ZnO films, in: J. Appl. Phys. 101(6), 063918:1-5 (2007) A.O. Ankiewicz A.O. Ankiewicz, M.C. Carmo, N.A. Sobolev, W. Gehlhoff, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann Electron paramagnetic resonance in transition metal-doped ZnO nanowires, in: J. Appl. Phys. 101(2), 024324:1-6 (2007) A. Rahm A. Rahm, E.M. Kaidashev, H. Schmidt, M. Diaconu, A. Pöppl, R. Böttcher, C. Meinecke, T. Butz, M. Lorenz, M. Grundmann Growth and characterization of Mn- and Co-doped ZnO nanowires, in: Microchim. Acta 156, 21-25 (2007) H. von Wenckstern H. von Wenckstern, M. Brandt, J. Lenzner, G. Zimmermann, H. Hochmuth, M. Lorenz, M. Grundmann Temperature dependent Hall measurements on PLD thin films, in: Proc. Mat. Res. Soc. 957, 23:1-6 (2007) S. Heitsch S. Heitsch, G. Zimmermann, A. Müller, J. Lenzner, H. Hochmuth, G. Benndorf, M. Lorenz, M. Grundmann Interface and Luminescence Properties of Pulsed Laser Deposited MgZnO/ZnO Quantum Wells with Strong Confinement, in: Proc. Mat. Res. Soc. 957, 229:1-6 (2007) M. Grundmann M. Grundmann, A. Rahm, Th. Nobis, H. von Wenckstern, M. Lorenz, C. Czekalla, J. Lenzner Growth and Characterization of Optical and Electrical Properties of ZnO Nano- and Microwires, in: Proc. Mat. Res. Soc. 957, 107:1-6 (2007) R. Schmidt-Grund R. Schmidt-Grund, C. Sturm, M. Schubert, B. Rheinländer, D. Faltermeier, H. Hochmuth, A. Rahm, J. Bläsing, C. Bundesmann, J. Zúñiga-Pérez, T. Chavdarov, M. Lorenz, M. Grundmann Valence Band Structure of ZnO and MgxZn1-xO, in: Proc. Mat. Res. Soc. 1035, 163-169 (2007) Martin Allen Martin Allen, Holger von Wenckstern, Marius Grundmann, Stuart Hatfield, Paul Jefferson, Philip King, Timothy Veal, Chris McConville, Steven Durbin Mechanisms in the Formation of High Quality Schottky Contacts to n-type ZnO, in: Proc. Mat. Res. Soc. 1035, 11-16 (2007) B.Q. Cao B.Q. Cao, M. Lorenz, A. Rahm, H. von Wenckstern, C. Czekalla, J. Lenzner, G. Benndorf, M. Grundmann Phosphorous acceptor doped ZnO nanowires prepared by pulsed laser deposition, in: Nanotechnology 18(45), 455707:1-5 (2007) J. Zúñiga-Pérez J. Zúñiga-Pérez, A. Rahm, C. Czekalla, J. Lenzner, M. Lorenz, M. Grundmann Ordered growth of tilted ZnO nanowires: morphological, structural and optical characterization, in: Nanotechnology 18(19), 195303:1-7 (2007) F. Danie Auret F. Danie Auret, W.E. Meyer, P.J. Janse van Rensburg, M. Hayes, J.M. Nel, Holger von Wenckstern, H. Schmidt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 meV and 370 meV below the conduction band, in: Physica B 401-402, 378-381 (2007) Q. Xu Q. Xu, L. Hartmann, H. Schmidt, H. Hochmuth, M. Lorenz, D. Spemann, M. Grundmann s-d exchange interaction induced magnetoresistance in magnetic ZnO, in: Phys. Rev. B 76(13), 134417:1-4 (2007) H. Frenzel H. Frenzel, H. von Wenckstern, A. Weber, H. Schmidt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann Photocurrent spectroscopy of deep levels in ZnO thin films, in: Phys. Rev. B 76(3), 035214:1-6 (2007) G. Brauer G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, H. von Wenckstern, M. Brandt, M. Lorenz, M. Grundmann Defects in N+ ion-implanted ZnO single crystals studied by positron annihilation and Hall effect, in: Phys. Status Solidi C 4(10), 3642-3645 (2007) H. von Wenckstern H. von Wenckstern, H. Schmidt, C. Hanisch, M. Brandt, C. Czekalla, G. Benndorf, G. Biehne, A. Rahm, H. Hochmuth, M. Lorenz, M. Grundmann Homoepitaxy of ZnO by Pulsed-Laser Deposition, in: Phys. Status Solidi RRL 1(4), 129-131 (2007) Thomas Nobis Thomas Nobis, Andreas Rahm, Christian Czekalla, Michael Lorenz, Marius Grundmann Optical whispering gallery modes in dodecagonal zinc oxide microcrystals, in: Superlatt. Microstr. 42(1-6), 333-336 (2007) G. Brauer G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, C. Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, M. Grundmann Comparative characterization of differently grown ZnO single crystals by positron annihilation and Hall effect, in: Superlatt. 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Microstr. 41(5-6), 347-351 (2007) Michael Lorenz Michael Lorenz, Matthias Brandt, Jürgen Schubert, Holger Hochmuth, Holger von Wenckstern, Mathias Schubert, Marius Grundmann Polarization coupling in epitaxial ZnO/BaTiO3 thin film heterostructures on SrTiO3 (100) substrates, in: Proc. SPIE 6474, 64741S:1-9 (2007) M. Schmidt M. Schmidt, R. Pickenhain, M. Grundmann Exact Solutions for the Capacitance of Space Charge Regions at Semiconductor Interfaces, in: Sol. St. Electr. 51(6), 1002-1004 (2007) Mariana Ungureanu Mariana Ungureanu, Heidemarie Schmidt, Holger von Wenckstern, Holger Hochmuth, Michael Lorenz, Marius Grundmann, Marian Fecioru-Morariu, Gernot Güntherodt A comparison between ZnO films doped with 3d and 4f magnetic ions, in: Thin Solid Films 515(24), 8761-8763 (2007) M. Grundmann M. Grundmann Nanowhiskers and their applications, in: 1st Saxon Biotechnology Symposium, p. 24 (2007), ISBN 978-3-86780-044-0 Report of The Physics Institutes of Universität Leipzig 2006, in: Universität Leipzig, M. Grundmann, ed. Marius Grundmann Marius Grundmann The Physics of Semiconductors, An Introduction including Devices and Nanophysics, in: (Springer, Heidelberg, 2006), ISBN 978-3-540-25370-9 H. von Wenckstern H. von Wenckstern, R. Pickenhain, H. Schmidt, M. Brandt, G. Biehne, M. Lorenz, M. Grundmann Deep acceptors states in ZnO single crystals, in: Appl. Phys. Lett. 89(9), 092122:1-3 (2006) D. Fritsch D. Fritsch, H. Schmidt, M. Grundmann Pseudopotential band structures of rocksalt MgO, ZnO, and Mg1-xZnxO, in: Appl. Phys. Lett. 88(13), 134104:1-3 (2006) H. von Wenckstern H. von Wenckstern, G. Biehne, R. Abdel Rahman, H. Hochmuth, M. Lorenz, M. Grundmann Mean barrier height of Pd Schottky contacts on ZnO thin films, in: Appl. Phys. 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Wagner Recrystallization behavior in chiral sculptured thin films from silicon, in: J. Appl. Phys. 100(1), 016107:1-3 (2006) Qingyu Xu Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Daniel Spemann, Marius Grundmann Magnetoresistance effects in Zn0.90Co0.10O films, in: J. Appl. Phys. 100(1), 013904:1-4 (2006) M. Diaconu M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, G. Benndorf, D. Spemann, A. Setzer, P. Esquinazi, A. Pöppl, H. von Wenckstern, K.-W. Nielsen, R. Gross, H. Schmid, W. Mader, G. Wagner, M. Grundmann Room-temperature ferromagnetic Mn-alloyed ZnO films obtained by pulsed laser deposition, in: J. Magn. Magn. Mat. 307(2), 212-221 (2006) L. Hartmann L. Hartmann, Q. Xu, H. Schmidt, H. Hochmuth, M. Lorenz, Ch. Sturm, Ch. Meinecke, M. Grundmann Spin polarization in Zn0.95Co0.05O:(Al,Cu) thin films, in: J. Phys. D: Appl. Phys. 39(23), 4920-4924 (2006) Karsten Goede Karsten Goede, Marius Grundmann, Kai Holland-Nell, Annette Beck-Sickinger Cluster properties of peptides on (100) semiconductor surfaces, in: Langmuir 22(19), 8104-8108 (2006) C. Bundesmann C. Bundesmann, M. Lorenz, M. Grundmann, M. Schubert Phonon modes, dielectric constants, and exciton mass parameters in ternary MgxZn1-xO, in: Proc. Mat. Res. Soc. 928E, GG05-03:1-5 (2006) S. Jaensch S. Jaensch, H. Schmidt, M. Grundmann Quantitative scanning capacitance microscopy, in: Physica B 376-377, 913-915 (2006) M. Diaconu M. Diaconu, H. Schmidt, M. Fecioru-Morariu, G. Güntherodt, H. Hochmuth, M. Lorenz, M. Grundmann Ferromagnetic behavior in Zn(Mn,P)O thin films, in: Phys. Lett. A 351(4-5), 323-326 (2006) Marcus Gonschorek Marcus Gonschorek, Heidemarie Schmidt, Jens Bauer, Gabriele Benndorf, Gerald Wagner, Georgii E. Cirlin, Marius Grundmann Thermally assisted tunneling processes in InGaAs/GaAs quantum dot structures, in: Phys. Rev. B 74(11), 115312:1-13 (2006) G. Brauer G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, J. Cizek, I. Prochazka, C. Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, M. Grundmann Defects in virgin and N+-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy, in: Phys. Rev. B 74(4), 045208:1-10 (2006) Qingyu Xu Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Chris Sturm, Daniel Spemann, Marius Grundmann Metal-insulator transition in Co-doped ZnO: Magnetotransport properties, in: Phys. Rev. B 73(20), 205342:1-5 (2006) G. Brauer G. Brauer, W. Anwand, W. Skorupa, H. Schmidt, M. Diaconu, M. Lorenz, M. Grundmann Structure and ferromagnetism of Mn+ ion-implanted ZnO thin films on sapphire , in: Superlatt. Microstr. 39(1-4), 41-49 (2006) H. Schmidt H. Schmidt, M. Diaconu, H. Hochmuth, M. Lorenz, A. Setzer, P. Esquinazi, A. Pöppl, D. Spemann, K.W. Nielsen, R. Gross, G. Wagner, M. Grundmann Weak ferromagnetism in textured Zn1-xTMxO thin films, in: Superlatt. Microstr. 39(1-4), 334-339 (2006) M. Diaconu M. Diaconu, H. Schmidt, A. Pöppl, R. Böttcher, J. Hoentsch, A. Rahm, H. Hochmuth, M. Lorenz, M. Grundmann EPR study on magnetic Zn1-xMnxO, in: Superlatt. Microstr. 38(4-6), 413-420 (2006) T. Nobis T. Nobis, A. Rahm, M. Lorenz, M. Grundmann Numerical Modeling of Zinc Oxide Nanocavities to Determine Their Birefringence, in: Proc. SPIE 6122, 61220V:1-6 (2006) R. Schmidt-Grund R. Schmidt-Grund, T. Gühne, H. Hochmuth, B. Rheinländer, A. Rahm, V. Gottschalch, J. Lenzner, M. Grundmann Cylindrical resonators with coaxial Bragg reflectors, in: Proc. SPIE 6038, 489-498 (2006) M. Diaconu M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, H. von Wenckstern, G. Biehne, D. Spemann, M. Grundmann Deep defects generated in n-conducting ZnO:TM thin films, in: Sol. St. Comm. 137(8), 417-421 (2006) Qingyu Xu Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Daniel Spemann, Andreas Rahm, Marius Grundmann Magnetoresistance in pulsed laser deposited 3d transition metal doped ZnO films, in: Thin Solid Films 515(4), 2549-2554 (2006) S. Heitsch S. Heitsch, C. Bundesmann, G. Wagner, G. Zimmermann, A. Rahm, H. Hochmuth, G. Benndorf, H. Schmidt, M. Schubert, M. Lorenz, M. Grundmann Low temperature photoluminescence and infrared dielectric functions of pulsed laser deposited ZnO thin films on silicon, in: Thin Solid Films 496(2), 234-239 (2006) C. Klingshirn C. Klingshirn, M. Grundmann, A. Hoffmann, B. Meyer, A. Waag Zinkoxid - Ein alter, neuer Halbleiter, in: Physik-Journal 5(1), 33-38 (2006) Report of The Physics Institutes of Universität Leipzig 2005, in: Universität Leipzig, M. Grundmann, ed. M. Lorenz M. Lorenz, E.M. Kaidashev, A. Rahm, Th. Nobis, J. Lenzner, G. Wagner, D. Spemann, H. Hochmuth, M. Grundmann MgxZn1-xO (0≤x<0.2) nanowire arrays on sapphire grown by high-pressure pulsed-laser deposition, in: Appl. Phys. Lett. 86(14), 143113:1-3 (2005) B.N. Mbenkum B.N. Mbenkum, N. Ashkenov, M. Schubert, M. Lorenz, H. Hochmuth, D. Michel, M. Grundmann, G. Wagner Temperature-dependent dielectric and electro-optic properties of a ZnO-BaTiO3-ZnO heterostructure grown by pulsed-laser deposition, in: Appl. Phys. Lett. 86(9), 091904:1-3 (2005) Holger von Wenckstern Holger von Wenckstern, Swen Weinhold, Gisela Biehne, Rainer Pickenhain, Heidemarie Schmidt, Holger Hochmuth, Marius Grundmann Donor levels in ZnO, in: Adv. Sol. St. Phys. 45, 263-274 (2005) Andreas Rahm Andreas Rahm, Thomas Nobis, Evgeni M. Kaidashev, Michael Lorenz, Gerald Wagner, Jörg Lenzner, Marius Grundmann High-pressure Pulsed Laser Deposition and Structural Characterization of Zinc Oxide Nanowires, in: Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 875-876 (2005) Thomas Nobis Thomas Nobis, Evgeni M. Kaidashev, Andreas Rahm, Michael Lorenz, Jörg Lenzner, Marius Grundmann Optical Resonances Of Single Zinc Oxide Microcrystals, in: Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 849-850 (2005) H. Schmidt H. Schmidt, M. Diaconu, E. Guzman, H. Hochmuth, M. Lorenz , G. Benndorf, A. Setzer, P. Esquinazi, H. von Wenckstern, D. Spemann, A. Pöppl, R. Böttcher, M. Grundmann N-conducting, ferromagnetic Mn-doped ZnO thin films on sapphire substrates, in: Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 351-352 (2005) R. Schmidt-Grund R. Schmidt-Grund, D. Fritsch, M. Schubert, B. Rheinländer, H. Schmidt, H. Hochmuth, M. Lorenz, C.M. Herzinger, M. Grundmann Band-to-band transitions and optical properties of MgxZn1-xO films, in: Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 201-202 (2005) H. von Wenckstern H. von Wenckstern, S. Weinhold, G. Biehne, R. Pickenhain, E.M. Kaidashev, M. Lorenz, M. Grundmann Static and transient capacitance spectroscopy on ZnO, in: Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 197-198 (2005) H. von Wenckstern H. von Wenckstern, S. Heitsch, G. Benndorf, D. Spemann, E.M. Kaidashev, M. Lorenz, M. Grundmann Incorporation and electrical activity of group V acceptors in ZnO thin films, in: Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 183-184 (2005) C. Bundesmann C. Bundesmann, M. Schubert, N. Ashkenov, M. Grundmann, G. Lippold, J. Piltz Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe2-based photoabsorber layers on polyimide substrates , in: Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 165-166 (2005) Holger von Wenckstern Holger von Wenckstern, Rainer Pickenhain, Swen Weinhold, Michael Ziese, Pablo Esquinazi, Marius Grundmann Electrical properties of Ni/GaAs and Au/GaAs Schottky contacts in high magnetic fields, in: Proc. 27th Int. Conf. on the Physics of Semiconductors (ICPS-27), (Flagstaff, AZ, 2004), AIP Conf. Proc. 772, 1333-1334 (2005) T. Nobis T. Nobis, M. Grundmann Low order whispering gallery modes in hexagonal nanocavities, in: Phys. Rev. A 72(6), 063806:1-11 (2005) M. Diaconu M. Diaconu, H. Schmidt, A. Pöppl, R. Böttcher, J. Hoentsch, A. Klunker, D. Spemann, H. Hochmuth, M. Lorenz, M. Grundmann Electron paramagnetic resonance of Zn1-xMnxO thin films and single crystals, in: Phys. Rev. B 72(8), 085214:1-6 (2005) M. Grundmann M. Grundmann, H. von Wenckstern, R. Pickenhain, Th. Nobis, A. Rahm, M. Lorenz Electrical Properties of ZnO Thin Films and Optical Properties of ZnO-based Nanostructures, in: Superlatt. Microstr. 38(4-6), 317-328 (2005) M. Grundmann M. Grundmann The bias dependence of the non-radiative recombination current in p-n diodes, in: Sol. St. Electr. 49, 1446-1448 (2005) M. Lorenz M. Lorenz, H. Hochmuth, J. Lenzner, T. Nobis, G. Zimmermann, M. Diaconu, H. Schmidt, H. von Wenckstern, M. Grundmann Room-temperature luminescence of n-type ZnO thin films grown by pulsed laser deposition in N2, N2O, and O2, in: Thin Solid Films 486(1-2), 205-209 (2005) A. Rahm A. Rahm, G.W. Yang, M. Lorenz, T. Nobis, J. Lenzner, G. Wagner, M. Grundmann Two-dimensional ZnO:Al nanosheets and nanowalls obtained by Al2O3-assisted thermal evaporation, in: Thin Solid Films 486(1-2), 191-194 (2005) N. Ashkenov N. Ashkenov, M. Schubert, E. Twerdowski, B.N. Mbenkum, H. Hochmut, M. Lorenz, H. von Wenckstern, W. Grill, M. Grundmann Rectifying ferroelectric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures, in: Thin Solid Films 486(1-2), 153-157 (2005) M. Diaconu M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, G. Benndorf, J. Lenzner, D. Spemann, A. Setzer, K.-W. Nielsen, P. Esquinazi, M. Grundmann UV optical properties of ferromagnetic Mn-doped ZnO thin films grown by PLD, in: Thin Solid Films 486(1-2), 117-121 (2005) R. Schmidt-Grund R. Schmidt-Grund, T. Nobis, V. Gottschalch, B. Rheinländer, H. Herrnberger, M. Grundmann a-Si/SiOx Bragg-reflectors on micro-structured InP, in: Thin Solid Films 483(1-2), 257-260 (2005) Karsten Goede Karsten Goede, Michael Bachmann, Wolfhard Janke, Marius Grundmann Binding specificity of peptides on semiconductor surfaces, in: 4th Biotechnology Symposium 2005 - Abstracts, p. 192 (2005), A.A. Robitzki, A.G. Beck-Sickinger, S. Brakmann, S. Eichler, eds. (Universit, Leipzig, 2005) K. Goede K. Goede, M. Grundmann, K. Holland-Nell, A.G. Beck-Sickinger, M. Bachmann, W. Janke Peptide auf neuen Wegen, in: BIOforum 10, 53-55 (2005) M. Grundmann M. Grundmann Quantenfäden, Quantenpunkte, in: Effekte der Physik und ihre Anwendungen (3. Auflage), p. 478-483 (2005), M. von Ardenne, G. Musiol, S. Reball, eds. (Harri Deutsch, Frankfurt/M, 2005), ISBN 3-8171-1682-9 M. Grundmann M. Grundmann Quantum devices of reduced dimensionality, in: Encyclopedia of Condensed Matter Physics, p. 17-22 (2005), F. Bassani, J. Liedl, P. Wyder, eds. (Elsevier, Kidlington, 2005), ISBN 978-0-12-369401-0 Th. Nobis Th. Nobis, E.M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann Whispering Gallery Modes in Hexagonal Zinc Oxide Micro- and Nanocrystals, in: NATO Science Series II: Mathematics, Physics and Chemistry 194, 83-98 (2005), N.H. Nickel, E. Terukov, eds. (Kluwer, Dordrecht, 2005), ISBN 1-4020-3474-1 M. Grundmann M. Grundmann, H. von Wenckstern, R. Pickenhain, S. Weinhold, B. Chengnui, O. Breitenstein Electrical properties of ZnO thin films and single crystals, in: NATO Science Series II: Mathematics, Physics and Chemistry 194, 47-57 (2005), N.H. Nickel, E. Terukov, eds. (Kluwer, Dordrecht, 2005), ISBN 1-4020-3474-1 D. Fritsch D. Fritsch, R. Schmidt-Grund, H. Schmidt, C.M. Herzinger, M. Grundmann Polarization-dependent optical transitions at the fundamental band gap and higher critical points of wurtzite ZnO, in: Proc. 5th Int.Conf. Numerical Simulation of Optoelectronic Devices (NUSOD '05), p. 69-70 (2005) Report of The Physics Institutes of Universität Leipzig 2004, in: Universität Leipzig, M. Grundmann, ed. S. Jaensch S. Jaensch, H. Schmidt, M. Grundmann Quantitative scanning capacitance microscopy for controlling electrical properties below the 25 nm scale, in: VDI-Berichte 2005(Januar), 221-224 (2005) M. Lorenz M. Lorenz, H. Hochmuth, A. Jammoul, G. Ferro, Ch. Förster, J. Pezoldt, J. Zúñiga-Pérez, G. Benndorf, J. Lenzner, R. Schmidt-Grund, M. Grundmann Luminescence of ZnO thin films grown by pulsed laser deposition on 3C-SiC buffered Si, in: Wissenschaftlich Technische Berichte des Forschungszentrums Rossendorf FZR 433, 74-82 (2005) M. Lorenz M. Lorenz, H. Hochmuth, J. Lenzner, M. Brandt, H. von Wenckstern, G. Benndorf, M. Grundmann ZnO thin films grown by pulsed laser deposition on 6H-SiC single crystals, in: Wissenschaftlich Technische Berichte des Forschungszentrums Rossendorf FZR 433, 57-62 (2005) M. Schubert M. Schubert, N. Ashkenov, T. Hofmann, M. Lorenz, H. Hochmuth, H. von Wenckstern, M. Grundmann, G. Wagner Electro-optical properties of ZnO-BaTiO3-ZnO heterostructures grown by pulsed laser deposition, in: Ann. Phys. 13(1-2), 61-62 (2004) M. Lorenz M. Lorenz, H. Hochmuth, R. Schmidt-Grund, E.M. Kaidashev, M. Grundmann Advances of pulsed laser deposition of ZnO thin films, in: Ann. Phys. 13(1-2), 59-60 (2004) E. Guzman E. Guzman, H. Hochmuth, M. Lorenz, H. von Wenckstern, A. Rahm, E.M. Kaidashev, M. Ziese, A. Setzer, P. Esquinazi, A. Pöppl, D. Spemann, R. Pickenhain, H. Schmidt, M. Grundmann Pulsed laser deposition of Fe- and Fe, Cu-doped ZnO thin films, in: Ann. Phys. 13(1-2), 57-58 (2004) M. Lorenz M. Lorenz, J. Lenzner, E.M. Kaidashev, H. Hochmuth, M. Grundmann Cathodoluminescence of selected single ZnO nanowires on sapphire, in: Ann. Phys. 13(1-2), 39-40 (2004) C. Bundesmann C. Bundesmann, M. Schubert, D. Spemann, A. Rahm, H. Hochmuth, M. Lorenz, M. Grundmann Infrared dielectric function and phonon modes of Mg-rich cubic MgxZn1-xO (x > 0.67) thin films on sapphire (0001) , in: Appl. Phys. Lett. 85(6), 905-907 (2004) H. von Wenckstern H. von Wenckstern, E.M. Kaidashev, M. Lorenz, H. Hochmuth, G. Biehne, J. Lenzner, V. Gottschalch, R. Pickenhain, M. Grundmann Lateral homogeneity of Schottky contacts on n-type ZnO, in: Appl. Phys. Lett. 84(1), 79-81 (2004) Thomas Nobis Thomas Nobis, Evgeni M. Kaidashev, Andreas Rahm, Michael Lorenz, Jörg Lenzner, Marius Grundmann Spatially inhomogeneous impurity distribution in ZnO micropillars, in: Nano Lett. 4(5), 797-800 (2004) Karsten Goede Karsten Goede, Peter Busch, Marius Grundmann Binding specificity of a peptide on semiconductor surfaces, in: Nano Lett. 4(11), 2115-2120 (2004) D. Fritsch D. Fritsch, H. Schmidt, M. Grundmann Band dispersion relations of zinc-blende and wurtzite InN, in: Phys. Rev. B 69(16), 165204:1-5 (2004) Thomas Nobis Thomas Nobis, Evgeni M. Kaidashev, Andreas Rahm, Michael Lorenz, Marius Grundmann Whispering gallery modes in nano-sized dielectric resonators with hexagonal cross section, in: Phys. Rev. Lett. 93(10), 103903:1-4 (2004) R. Schmidt-Grund R. Schmidt-Grund, M. Schubert, B. Rheinländer, D. Fritsch, H. Schmidt, E.M. Kaidashev, M. Lorenz, H. Hochmuth, M. Grundmann UV-VUV Spectroscopic ellipsometry of ternary MgxZn1-xO (0 ≤ x ≤ 0.53) thin films, in: Thin Solid Films 455-456, 500-504 (2004) C. Bundesmann C. Bundesmann, N. Ashkenov, M. Schubert, A. Rahm, E. M. Kaidashev, M. Lorenz, M. Grundmann Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry, in: Thin Solid Films 455-456, 161-166 (2004) Report of The Physics Institutes of Universität Leipzig 2003, in: Universität Leipzig, M. Grundmann, ed. M. Grundmann M. Grundmann Nanoscroll formation from strained layer heterostructures, in: Appl. Phys. Lett. 83(12), 2444-2446 (2003) C. Bundesmann C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, E.M. Kaidashev, M. Lorenz, M. Grundmann Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga and Li, in: Appl. Phys. Lett. 83(10), 1974-1976 (2003) E. M. Kaidashev E. M. Kaidashev, M. Lorenz, H. von Wenckstern, J. Lenzner, G. Benndorf, A. Rahm, H.-C. Semmelhack, K.-H. Han, H. Hochmuth, C. Bundesmann, V. Riede, M. Grundmann High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition, in: Appl. Phys. Lett. 82(22), 3901-3903 (2003) R. Schmidt R. Schmidt, B. Rheinländer, M. Schubert, D. Spemann, T. Butz, J. Lenzner, E.M. Kaidashev, M. Lorenz, M. Grundmann Dielectric functions (1 to 5 eV) of wurtzite MgxZn1-xO (0 ≤ x < 0.29) thin films, in: Appl. Phys. Lett. 82(14), 2260-2262 (2003) L.E. Vorobjev L.E. Vorobjev, S.N. Danilov, V.Yu. Panevin, N.K. Fedosov, D.A. Firsov, V.A. Shalygin, A.D. Andreev, N.N. Ledentsov, V.M. Ustinov, G.E. Cirlin, V.A. Egorov, A. Tonkikh, F.Fossard, A.Helman, Kh.Moumanis, F.H.Julien, A. Weber, M. Grundmann Interband and intraband light absorption in InAs/GaAs quantum dots covered by InGaAs quantum wells, in: Proc. 26th Int. Conf. on the Physics of Semiconductors (ICPS-26), (Edinburgh, UK, 2002), IoP Conf. Ser. 171, P228:1-7 (2003), J.H. Davies, A.R. Long, eds. (IoP Publishing, Bristol), ISBN 978-0-7503-0924-0 R. Schmidt R. Schmidt, C. Bundesmann, N. Ashkenov, B. Rheinländer, M. Schubert, M. Lorenz, E. M. Kaidashev, D. Spemann, T. Butz, J. Lenzner, M. Grundmann Optical properties of ternary MgZnO thin films, in: Proc. 26th Int. Conf. on the Physics of Semiconductors (ICPS-26), (Edinburgh, UK, 2002), IoP Conf. Ser. 171, P11:1-8 (2003), J.H. Davies, A.R. Long, eds. (IoP Publishing, Bristol), ISBN 978-0-7503-0924-0 H. von Wenckstern H. von Wenckstern, H. Schmidt, R. Pickenhain, M. Grundmann Conduction band offset of pseudomorphic InAs/GaAs determined by capacitance spectroscopy, in: Proc. 26th Int. Conf. on the Physics of Semiconductors (ICPS-26), (Edinburgh, UK, 2002), IoP Conf. Ser. 171, H2:1-7 (2003), J.H. Davies, A.R. Long, eds. (IoP Publishing, Bristol), ISBN 978-0-7503-0924-0 N. Ashkenov N. Ashkenov, G. Wagner, H. Neumann, B. N. Mbenkum, C. Bundesmann, V. Riede, M. Lorenz, E. M. Kaidashev, A. Kasic, M. Schubert, M. Grundmann Infrared dielectric functions and phonon modes of high-quality ZnO films, in: J. Appl. Phys. 93(1), 126-133 (2003) Daniel Fritsch Daniel Fritsch, Heidemarie Schmidt, Marius Grundmann Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN, in: Phys. Rev. B 67(23), 235205:1-13 (2003) M. Lorenz M. Lorenz, E. M. Kaidashev, H. von Wenckstern, V. Riede, C. Bundesmann, D. Spemann, G. Benndorf, H. Hochmuth, A. Rahm, H.-C. Semmelhack, M. Grundmann Optical and electrical properties of epitaxial (Mg,Cd)xZn1-xO, ZnO, and ZnO:(Ga,Al) thin films on c-plane sapphire grown by pulsed laser deposition, in: Sol. St. Electr. 47(12), 2205-2209 (2003) M. Lorenz M. Lorenz, H. Hochmuth, M. Schallner, R. Heidinger, D. Spemann, M. Grundmann Dielectric properties of Fe-doped BaxSr1-xTiO3 thin films on polycrystalline substrates at temperatures between -35 and +85°C, in: Sol. St. Electr. 47(12), 2199-2203 (2003) M. Lorenz M. Lorenz, H. Hochmuth, M. Grundmann, E. Gaganidze, J. Halbritter Microwave properties of epitaxial large-area Ca-doped YBa2Cu3O7-δ thin films on r-plane sapphire , in: Sol. St. Electr. 47(12), 2183-2186 (2003) Report of The Physics Institutes of Universität Leipzig 2002, in: Universität Leipzig, M. Grundmann, ed. M. Grundmann M. Grundmann, R. Heitz, D. Bimberg Comment on "Problems in recent analysis of injected carrier dynamics in semiconductor quantum dots" [Appl. Phys. Lett. 79, 3912 (2001)], in: Appl. Phys. Lett. 81(3), 565 (1 page) (2002) C. Bundesmann C. Bundesmann, M. Schubert, D. Spemann, T. Butz, M. Lorenz, E. M. Kaidashev, M. Grundmann, N. Ashkenov, H. Neumann, G. Wagner Infrared dielectric functions and phonon modes of wurtzite MgxZn1-xO (x≤0.2), in: Appl. Phys. Lett. 81(13), 2376-2378 (2002) M. Grundmann M. Grundmann, N.N. Ledentsov, F. Hopfer, F. Heinrichsdorff, F. Guffarth, D. Bimberg, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Yu.G. Musikhin, Zh.I. Alferov, J.A. Lott, N.D. Zhakarov, P. Werner Long Wavelength Quantum Dot Lasers, in: J. Mat. Sci: Mat. Electr. 13, 643-647 (2002) T. Hofmann T. Hofmann, M. Grundmann, C.M. Herzinger, M. Schubert, W. Grill Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures, in: Proc. Mat. Res. Soc. 744, 277-282 (2002) M. Lorenz M. Lorenz, H. Hochmuth, D. Natusch, M. Grundmann High-quality reproducible PLD Y-Ba-Cu-O: Ag thin films up to 4 inch diameter for microwave applications, in: Physica C 372, 587-589 (2002) L.E. Vorobjev L.E. Vorobjev, S.N. Danilov, A.V. Gluhovskoy, V.L. Zerova, E.A. Zibik, V.Y. Panevin, D.A. Firsov, V.A. Shalygin, A.D. Andreev, B.V. Volovik, A.E. Zhukov, N.N. Ledentsov, D.A. Livshits, V.M. Ustinov, Y.M. Shernyakov, A.F. Tsatsulnikov, A. Weber, M. Grundmann, S.R. Schmidt, A. Seilmeier, E. Towe, D. Pal Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells, in: Izvestiya Akademii Nauk Seriya Fizicheskaya 66(2), 231-235 (2002) L.E. Vorobjev L.E. Vorobjev, A.V. Glukhovskoy, S.N. Danilov, V.Yu. Panevin, D.A. Firsov, N.K. Fedosov, V.A. Shalygin, A.D. Andreev, B.V. Volovik, N.N. Ledentsov, D.A. Livshits, V.M. Ustinov, A.F. Tsatsulnikov, Yu.M. Shernyakov, M. Grundmann, A. Weber, F. Fossard, F.H. Julien Nonequilibrium spectroscopy of inter- and intraband transitions in quantum dot structures, in: Mat. Sci. Forum 384-385, 39-42 (2002), S. Asmontas, A. Dargys, H.G. Roskos, eds. E. Towe E. Towe, D. Pal, L.E. Vorobjev, A.V. Glukhovskoy, S.N. Danilov, V.L. Zerova, V.Y. Panevin, D.A. Firsov, V.A. Shalygin, G.G. Zegrya, A. Weber, M. Grundmann Injection lasers based on intraband carrier transitions, in: Mat. Sci. Forum 384-385, 209-212 (2002), S. Asmontas, A. Dargys, H.G. Roskos, eds. M. Grundmann M. Grundmann Theory of Quantum Dot Lasers, in: Nano-Optoelectronics, Concepts, Physics and Devices, p. 299-316 (2002), M. Grundmann, ed. (Springer, Berlin, 2002), ISBN 978-3-642-56149-8 M. Grundmann M. Grundmann, ed. Nano-Optoelectronics, Concepts, Physics and Devices (Springer, Berlin, 2002), ISBN 978-3-642-56149-8 Report of The Institute for Experimental Physics II of Universität Leipzig 2001, in: Universität Leipzig, M. Grundmann, ed. D. Bimberg D. Bimberg, M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, Ch. Ribbat, R. Sellin, Zh.I. Alferov, P.S. Kop'ev, M.V. Maximov, V.M. Ustinov, A.E. Zhukov, J.A. Lott Quantum dot lasers: Theory and experiment, in: AIP Conf. Proc. 560(1), 178-197 (2001) (AIP Publishing LLC, New York) R. Sellin R. Sellin, Ch. Ribbat, M. Grundmann, N.N. Ledentsov, D. Bimberg Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers, in: Appl. Phys. Lett. 78(9), 1207-1209 (2001) A. Weber A. Weber, M. Grundmann, N.N. Ledentsov Comment on "Room-Temperature Long-Wavelength (λ=13.3 μm) unipolar quantum dot intersubband laser, in: Electr. Lett. 37(2), 96-97 (2001) Ch. Ribbat Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg, N.A. Sobolev, M.C. Carmo Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation, in: Electr. Lett. 37(3), 174-175 (2001) O. Stier O. Stier, A. Schliwa, R. Heitz, M. Grundmann, D. Bimberg Biexciton binding energy in InAs/GaAs quantum dots, in: Proc. 25th Int. Conf. on The Physics of Semiconductors (ICPS-25), (Osaka, Japan, 2000), Springer Proc. Physics 87(II), 1265:1-2 (2001) (Springer, Berlin), N. Miura, T. Ando, eds., ISBN 978-3-540-41778-1 A. Weber A. Weber, K. Goede, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov Electrically and optically pumped mid-infrared emission from quantum dots, in: Proc. 25th Int. Conf. on The Physics of Semiconductors (ICPS-25), (Osaka, Japan, 2000), Springer Proc. Physics 87(II), 1157:1-2 (2001) (Springer, Berlin), N. Miura, T. Ando, eds., ISBN 978-3-540-41778-1 L.V. Asryan L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, D. Bimberg Effect of excited-state transitions on the threshold characteristics of a quantum dot laser, in: IEEE J. Quantum Electron. 37(3), 418-425 (2001) L.V. Asryan L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, D. Bimberg Maximum modal gain of a self-assembled InAs/GaAs quantum dot laser, in: J. Appl. Phys. 90(3), 1666-1668 (2001) L.E. Vorobjev L.E. Vorobjev, S.N. Danilov, A.V. Glukhovskoy, V.L. Zerova, E.A. Zibik, V.Yu. Panevin, D.A. Firsov, V.A. Shalygin, A.D. Andreev, B.V. Volovik, A.E. Zhukov, N.N. Ledentsov, D.A. Livshits, V.M. Ustinov, Yu.M. Shernyakov, A.F. Tsatsulnikov, A. Weber, M. Grundmann, S.R. Schmidt, A. Seilmeier, E. Towe, D. Pal Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells, in: Nanotechnology 12(4), 462-465 (2001) V.A. Shalygin V.A. Shalygin, L.E. Vorobjev, A.V. Glukhovskoy, S.N. Danilov, V.Yu. Panevin, D.A. Firsov, B.V. Volovik, N.N. Ledentsov, D.A. Livshits, V.M. Ustinov, Yu.M. Shernyakov, A.F. Tsatsulnikov, A. Weber, M. Grundmann Near and mid infrared spectroscopy of InGaAs/GaAs quantum dot structures, in: Nanotechnology 12(4), 447-449 (2001) K. Goede K. Goede, A. Weber, F. Guffarth, C.M.A. Kapteyn, F. Heinrichsdorff, R. Heitz, D. Bimberg, M. Grundmann Calorimetric investigation of intersublevel transitions in charged quantum dots, in: Phys. Rev. B 64(24), 245317:1-7 (2001) N.A. Sobolev N.A. Sobolev, A. Cavaco, M.C. Carmo, M. Grundmann, F. Heinrichsdorff, D. Bimberg Enhanced radiation hardness of InAs/GaAs quantum dot structures, in: Phys. Status Solidi B 224(1), 93-96 (2001) A. Weber A. Weber, K. Goede, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots, in: Phys. Status Solidi B 224(3), 833-837 (2001) S. Bognár S. Bognár, M. Grundmann, D. Ouyang, R. Heitz, R. Sellin, D. Bimberg Large gain in InAs/GaAs quantum dots, in: Phys. Status Solidi B 224(3), 823-826 (2001) Ch. Ribbat Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg High power quantum dot lasers at 1160 nm, in: Phys. Status Solidi B 224(3), 819-822 (2001) D. Bimberg D. Bimberg, M. Grundmann, N.N. Ledentsov, M.H. Mao, Ch. Ribbat, R. Sellin, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, J.A. Lott Novel infrared quantum dot lasers: Theory and reality, in: Phys. Status Solidi B 224(3), 787-796 (2001) A. Schliwa A. Schliwa, O. Stier, R. Heitz, M. Grundmann, D. Bimberg Exciton level crossing in coupled InAs/GaAs quantum dot pairs, in: Phys. Status Solidi B 224(2), 405-408 (2001) O. Stier O. Stier, A. Schliwa, R. Heitz, M. Grundmann, D. Bimberg Stability of biexcitons in pyramidal InAs/GaAs quantum dots, in: Phys. Status Solidi B 224(1), 115-118 (2001) M. Grundmann M. Grundmann, A. Weber, K. Goede, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov Mid-infrared properties of quantum dot lasers, in: Proc. SPIE 4598, 44-57 (2001) M. Grundmann M. Grundmann, D. Bimberg Nanotechnologische Entwicklungen - Konvergenz mit den IuK Technologien, in: Jahrbuch Telekommunikation und Gesellschaft 2001 "Internet@Future: Technik, Anwendungen und Dienste der Zukunft" 9, 68 (2001) (H, Heidelberg, 2001) M. Grundmann M. Grundmann Feasibility of 5 Gbit/s wavelength division multiplexing using quantum dot lasers, in: Appl. Phys. Lett. 77(26), 4265-4267 (2000) M. Grundmann M. Grundmann, A. Weber, K. Goede, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov Mid-infrared emission from near-infrared quantum-dot lasers, in: Appl. Phys. Lett. 77(1), 4-6 (2000) M. Grundmann M. Grundmann How a quantum dot laser turns on, in: Appl. Phys. Lett. 77(10), 1428-1430 (2000) F. Heinrichsdorff F. Heinrichsdorff, Ch. Ribbat, M. Grundmann, D. Bimberg High power quantum dot lasers at 1100 nm, in: Appl. Phys. Lett. 76(5), 556-558 (2000) M. Grundmann M. Grundmann, N.N. Ledentsov, F. Hopfer, F. Heinrichsdorff, F. Guffarth, D. Bimberg, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Yu.G. Musikhin, Zh.I. Alferov, J.A. Lott, N.D. Zhakharov, P. Werner Quantum dots for GaAs-based surface emitting lasers at 1300 nm, in: Adv. Sol. St. Phys. 40, 589-597 (2000), B. Kramer, ed. P. Werner P. Werner, K. Scheerschmidt, N.D. Zacharov, R. Hillebrand, M. Grundmann, R. Schneider Quantum Dot Structures in the InGaAs System Investigated by TEM Techniques, in: Cryst. Res. Technol. 35(6-7), 759-768 (2000) M. Grundmann M. Grundmann Relaxation oscillations of quantum dot lasers, in: Electr. Lett. 36, 1851-1852 (2000) N.N. Ledentsov N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, D. 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Formation of Semiconductor Interfaces (ICFSI-4), p. 530-533 (1994), H. L, ed. (World Scientific, Singapore, 1994) R.F. Schnabel R.F. Schnabel, M. Grundmann, A. Krost, J. Christen, F. Heinrichsdorff, D. Bimberg, H. Cerva Defect Reduction and Strain Relaxation Mechanisms in InP grown on Patterned Si(001), in: Proc. 6th Int. Conf. on InP and Rel. Compounds (IPRM-6), IEEE Catalog #94CH3369-6, Library of Congress #93-61270, p. 640-643 (1994) M. Grundmann M. Grundmann, V. Tuerck, J. Christen, R. F. Schnabel, D. Bimberg, E. Kapon, D.M. Hwang, C. Caneau, R. Bhat Strained InGaAs/GaAs Quantum Wires: Modelling and Optical Properties, in: Proc. 6th Int. Conf. on InP and Rel. Compounds (IPRM-6), IEEE Catalog #94CH3369-6, Library of Congress #93-61270, p. 451-454 (1994) R. F. Schnabel R. F. Schnabel, A. Krost, M. Grundmann, F. Heinrichsdorff, D. Bimberg, M. Pilatzek, P. Harde Epitaxy of High Resistivity InP on Si, in: Appl. Phys. Lett. 63(26), 3607-3609 (1993) H.M. Cox H.M. Cox, D.M. Hwang, M.R. Frei, C. Caneau, M. Grundmann, D. Bimberg Simultaneous Planarized Selective-Area Epitaxy of GaxIn1-xAs in Normal and Dove-tail Etched Grooves, in: Proc. Mat. Res. Soc. 326, 561-566 (1993) E. Kapon E. Kapon, M. Walther, D.M. Hwang, E. Colas, C. Caneau, R. Bhat, J. Christen, M. Grundmann, D. Bimberg Carrier Capture and Stimulated Emission in Quantum Well Lasers Grown on non-planar Substrates, in: NATO ASI Series E: Applied Sciences 236, 317-330 (1993), J.-P. Leburton, J. Pascual, C. Sotomayor-Torres, eds. (Kluwer, Dordrecht, 1993), ISBN 0792322770 R.F. Schnabel R.F. Schnabel, F. Heinrichsdorff, A. Krost, M. Grundmann, T. Wolf, K. Schatke, D. Bimberg, M. Pilatzek, P. Harde Semi-insulating InP:Fe on Si, in: Proc. 5th Int. Conf. on Indium Phosphide and Related Compounds (IPRM-5), IEEE Catalog #93CH3276-3, Library of Congress #93-77243, p. 115-118 (1993) J. Christen J. Christen, M. Grundmann, E. Kapon, E. Colas, D.M. Hwang, D. Bimberg Ultrafast carrier capture and long recombination lifetime of quasi one dimensional carriers in GaAs quantum wires, in: Appl. Phys. Lett. 61(1), 67-69 (1992) M. Grundmann M. Grundmann, A. Krost, D. Bimberg, O. Ehrmann Maskless Growth of InP stripes on patterned Si (001): Defect Reduction and Improvement of Optical Properties, in: Appl. Phys. Lett. 60(26), 3292-3294 (1992) J. Christen J. Christen, V. Petrova-Koch, V. Lehmann, T. Muschik, A. Kux, M. Grundmann, D. Bimberg Cathodoluminescence in microporous Si, in: Proc. 21st Int. Conf. on the Physics of Semiconductors (ICPS-21), (Beijing, China, 1992), p. 1487 (1992) (World Scientific, Singapore), P. Jiang, H.-Z. Zheng, eds. K. Streubel K. Streubel, V. Härle, F. Scholz, M. Bode, M. Grundmann Interfacial Properties of very thin GaInAs/InP Quantum Wells Structures grown by Metalorganic Vapor Phase Epitaxy, in: J. Appl. Phys. 71(7), 3300-3306 (1992) A. Krost A. Krost, M. Grundmann, D. Bimberg, H. Cerva InP on patterned Si(001): Defect Reduction by Application of the Necking Mechanism, in: J. Cryst. Growth 124(1-4), 207-212 (1992) M. Grundmann M. Grundmann, A. Krost, D. Bimberg, H. Cerva InGaAs/InP Quantum Wells on vicinal Si(001): Structural and Optical Properties, in: J. Vac. Sci. Technol. B 10(4), 1840-1843 (1992) E.H. Böttcher E.H. Böttcher, N. Kirstaedter, M. Grundmann, D. Bimberg, R. Zimmermann, C. Harder, H.P. Meier Nonspectroscopic Approach to the Determination of the Chemical Potential and Bandgap Renormalization, in: Phys. Rev. B 45(15), 8535-8541 (1992) J. Christen J. Christen, E. Kapon, M. Grundmann, D. M. Hwang, M. Joschko, D. Bimberg 1D Charge Carrier Dynamics in GaAs Quantum Wires, in: Phys. Status Solidi B 173(1), 307-321 (1992) E. Kapon E. Kapon, M. Walther, J. Christen, M. Grundmann, C. Caneau, D.M. Hwang, E. Colas, R. Bhat, G.H. Song, D. Bimberg Quantum Wire Heterostructures for Optoelectronic Applications, in: Superlatt. Microstr. 12(4), 491-499 (1992) M. Grundmann M. Grundmann, A. Krost, D. Bimberg Crystallographic and Optical Properties of InP/Si (001) Grown by Low Temperature MOCVD Process, in: Surf. Sci. 267(1-3), 47-49 (1992) J. Christen J. Christen, E. Kapon, E. Colas, D.M. Hwang, L.M. Schiavone, M. Grundmann, D. Bimberg Cathodoluminescence Investigation of Lateral Carrier Confinement in GaAs/AlGaAs Quantum Wires Grown by OMCVD on Non-planar Substrates, in: Surf. Sci. 267(1-3), 257-262 (1992) E. Kapon E. Kapon, M. Walther, J. Christen, M. Grundmann, D.M. Hwang, E. Colas, D. Bimberg Optical Properties of Semiconductor Quantum Wires Grown on Nonplanar Substrates, in: Springer Series in Solid State Sciences 111, 300-310 (1992), G. Bauer, F. Kuchar, H. Heinrich, eds. (Springer, Berlin, 1992), ISBN 978-3-642-84857-5 M. Grundmann M. Grundmann, A. Krost, D. Bimberg, O. Ehrmann Local Epitaxy of Inp on V-Grooved Si, in: 6th Int. Conf. Metalorganic Vapor Phase Epitaxy, p. 17-18 (1992) D. Bimberg D. Bimberg, M. Grundmann, J. Christen Characterization of Strained Heterostructures by Cathodoluminescence, in: AIP Conf. Proc. 227(1), 68-71 (1991) (AIP Publishing LLC, New York) M. Grundmann M. Grundmann, A. Krost, D. Bimberg Low Temperature Metal Organic Chemical Vapor Deposition of InP on Si (001), in: Appl. Phys. Lett. 58(3), 284-286 (1991) M. Grundmann M. Grundmann, J. Christen, D. Bimberg, A. Hashimoto, T. Fukunaga, N. Watanabe Direct Imaging of Si Incorporation in GaAs Masklessly Grown on Patterned Si Substrates, in: Appl. Phys. Lett. 58(19), 2090-2092 (1991) [retracted] M. Grundmann M. Grundmann, A. Krost, D. Bimberg Antiphase Domain Free InP on Si (001): Optimization of MOCVD Process, in: J. Cryst. Growth 115(1-4), 150-153 (1991) J. Böhrer J. Böhrer, M. Grundmann, U. Lienert, D. Bimberg, M. Kamada, N. Watanabe Determination of the band discontinuity of MOCVD grown InGaAs/InAlAs Heterostructures with Optical and Structural Methods, in: J. Cryst. Growth 107(1-4), 555-560 (1991) M. Grundmann M. Grundmann, A. Krost, D. Bimberg LP-MOVPE Growth of Antiphase Domain Free InP on (001) Si using Low Temperature Processing , in: J. Cryst. Growth 107(1-4), 494-495 (1991) J. Christen J. Christen, M. Grundmann, D. Bimberg Scanning Cathodoluminescence Microscopy: A Unique Approach to Atomic Scale Characterization of HeteroInterfaces and Imaging of Semiconductor Inhomogeneities, in: J. Vac. Sci. Technol. B 9(4), 2358-2368 (1991) M. Grundmann M. Grundmann, A. Krost, D. Bimberg Observation of the First Order Phase Transition from Single to Double Stepped Si (001) in Metalorganic Chemical Vapor Deposition of InP on Si, in: J. Vac. Sci. Technol. B 9(4), 2158-2166 (1991) Marius Grundmann Marius Grundmann, Jürgen Christen, Dieter Bimberg Cathodoluminescence of Strained Quantum Wells and Layers, in: Superlatt. Microstr. 9(1), 65-75 (1991) M. Grundmann M. Grundmann Heteroepitaxie von InP auf Si (001), in: Dissertation (Technische Universität Berlin, 1991) K. Streubel K. Streubel, F. Scholz, V. Härle, M. Bode, M. Grundmann, J. Christen, D. Bimberg Determination of the interface structure of very thin GaInAs/InP quantum wells, in: Proc. 3rd Int. Conf. Indium Phosphide and Related Materials, p. 468-471 (1991) M. Grundmann M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller Erratum: Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells [Appl. Phys. Lett. 55, 1765 (1989)], in: Appl. Phys. Lett. 57(19), 2034 (1 page) (1990) M. Grundmann M. Grundmann, U. Lienert, D. Bimberg, B. Sievers, F. R. Keßler, A. FischerColbrie, J.N. Miller Orthorhombic Crystal Symmetry in Partially Relaxed In0.23Ga0.77As/GaAs Quantum Wells: Impact on Valence Band Structure and Optical Anisotropy , in: Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) (Thessaloniki, Greece, 1990) 2, 945 (1990) (World Scientific, Singapore), E.M. Anastassakis, J.D. Koannopoulos, eds. E.H. Böttcher E.H. Böttcher, N. Kirstaedter, M. Grundmann, D. Bimberg, C. Harder, M. Meier Band-Gap Renormalization in undoped GaAs/AlGaAs Quantum Wells Determined by a Non-Spectroscopic Method, in: Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) (Thessaloniki, Greece, 1990) 1, 371 (1990) (World Scientific, Singapore), E.M. Anastassakis, J.D. Koannopoulos, eds. J. Christen J. Christen, M. Grundmann, D. Bimberg, A. Hashimoto, T. Fukunaga, N. Watanabe Direct Imaging of Lateral Bandgap Variation in GaAs on V grooved Si, in: Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) (Thessaloniki, Greece, 1990) 1, 272 (1990) (World Scientific, Singapore), E.M. Anastassakis, J.D. Koannopoulos, eds. D.B. Tran Thoai D.B. Tran Thoai, R. Zimmermann, M. Grundmann, D. Bimberg Image Charges in Semiconductor Quantum Wells: Effect on Exciton Binding Energy , in: Phys. Rev. B 42(9), 5906-5909 (1990) M. Grundmann M. Grundmann, D. Bimberg, A. Fischer-Colbrie, J.N. Miller Recombination Dynamics in Pseudomorphic and Partially Relaxed In0.23Ga0.77As/GaAs Quantum Wells, in: Phys. Rev. B 41(14), 10120-10123 (1990) M. Grundmann M. Grundmann, U. Lienert, J. Christen, D. Bimberg, A. Fischer-Colbrie, J.N. Miller Pseudomorphic In0.23Ga0.77As/GaAs Quantum Wells: Correlation of Anisotropic Lattice Relaxation and Degradation of Optical Properties, in: Springer Series in Solid State Sciences 97, 304-312 (1990), F. Kuchar, H. Heinrich, G. Bauer, eds. (Springer, Berlin, 1990), ISBN 978-3-642-84274-0 M. Grundmann M. Grundmann, J. Christen, D. Bimberg Cathodoluminescence Imaging of Defects at Semiconductor Surfaces and Interfaces , in: Defect Control in Semiconductors 2, 1203-1211 (1990), K. Sumino, ed. (North-Holland, Amsterdam, 1990) M. Grundmann M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller Anisotropic and Inhomogeneous Strain Relaxation in Pseudomorphic In0.23Ga0.77As/GaAs Quantum Wells, in: Appl. Phys. Lett. 55(17), 1765-1767 (1989) J. Christen J. Christen, M. Grundmann, D. Bimberg Direct Imaging and Theoretical Modelling of the Atomistic Morphological and Chemical Structure of Semiconductor Heterointerfaces, in: Appl. Surf. Sci. 41/42, 329-336 (1989) M. Grundmann M. Grundmann, J. Christen, D. Bimberg, A. Fischer-Colbrie, R. Hull Misfit Dislocations in Pseudomorphic In0.23Ga0.77As/GaAs Quantum Wells: Influence on Lifetime and Diffusion of Excess Excitons, in: J. Appl. Phys. 66(5), 2214-2216 (1989) M. Grundmann M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller Dislocation Induced Anisotropies of the Structural and Optical Properties of Pseudomorphic InGaAs/GaAs Quantum Wells, in: Inst. Phys. Conf. Ser. 106, 453-458 (1989), T. Ikoma, H. Watanabe, eds. M. Grundmann M. Grundmann, D. Bimberg Anisotropy Effects on Excitonic Properties in Realistic Quantum Wells , in: Phys. Rev. B 38(18), 13486-13489 (1988) |
